JP2007535147A - インサイチュドープトエピタキシャルフィルム - Google Patents
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- JP2007535147A JP2007535147A JP2007509644A JP2007509644A JP2007535147A JP 2007535147 A JP2007535147 A JP 2007535147A JP 2007509644 A JP2007509644 A JP 2007509644A JP 2007509644 A JP2007509644 A JP 2007509644A JP 2007535147 A JP2007535147 A JP 2007535147A
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
Abstract
Description
Claims (39)
- インサイチュドープトエピタキシャル半導体層を堆積するための方法であって、
パターニングされた基板を収容する処理チャンバ内を約80torrより高圧に維持するステップと、
前記処理チャンバ内へジクロロシランのフローを提供するステップと、
前記処理チャンバ内へドーパント水素化物のフローを提供するステップと、
パターニングされた前記基板上の単結晶物質上に、約3nm min−1より速い速度で、前記エピタキシャル半導体層を選択的に堆積するステップとを含む方法。 - 前記エピタキシャル半導体層が約1019cm−3より高いドーパント濃度を有する請求項1の方法。
- 前記エピタキシャル半導体層が約1019cm−3〜約2×1021cm−3の範囲のドーパント濃度を有する請求項1の方法。
- パターニングされた前記基板が、露出されたシリコン酸化物ベースの絶縁物質を含み、選択的に堆積するステップが、約5nm min−1より速い速度での堆積を含む請求項1の方法。
- ジクロロシランの前記フローが約200sccmより多い請求項1の方法。
- ジクロロシランの前記フローが約300sccm〜約5slmの範囲である請求項1の方法。
- 前記ドーパント水素化物(希釈ガス中で1%に希釈された)の前記フローに対するジクロロシランの前記フローの割合が、約4:1〜約100:1の範囲、若しくは前記ドーパント水素化物の異なる希釈度に関して均等値である請求項1の方法。
- 前記ドーパント水素化物(希釈ガス中で1%に希釈された)の前記フローに対するジクロロシランの前記フローの割合が、約50:1〜約100:1の範囲、若しくは前記ドーパント水素化物の異なる希釈度に関して均等値である請求項1の方法。
- 前記ドーパント水素化物(希釈ガス中で1%に希釈された)の前記フローに対するジクロロシランの前記フローの割合が、約4:1〜約50:1の範囲、若しくは前記ドーパント水素化物の異なる希釈度に関して均等値である請求項1の方法。
- 堆積の間中、前記処理チャンバ内を約100torrより高圧に維持するステップを更に含む請求項1の方法。
- 堆積の間中、前記処理チャンバ内をほぼ大気圧に更に維持する請求項1の方法。
- 選択的に堆積するステップの間、エッチャントをフローするステップを更に含む請求項1の方法。
- 前記エッチャントがHClを含む請求項12の方法。
- 選択的に堆積するステップが、x cm2のウィンドウについての不均一性の平均が、(0.5)x cm2のウィンドウについての不均一性の平均から約5%異なる場合のローディング効果より、少ないローディング効果を示す請求項1の方法。
- 選択的に堆積するステップが、前記基板上の所定の半導体ウィンドウ内で、20%未満の不均一性を有するマイクロローディング効果を示す請求項1の方法。
- 前記ジクロロシラン及び前記ドーパント水素化物と共にカーボン前駆体をフローし、前記エピタキシャル半導体層内にカーボンを添加するステップを更に含む請求項1の方法。
- 前記カーボン前駆体が有機シリコン前駆体を含む請求項16の方法。
- 前記カーボン前駆体がメチルシランを含む請求項16の方法。
- 前記ジクロロシラン及び前記ドーパント水素化物と共にゲルマニウム前駆体をフローし、前記エピタキシャル半導体層内にゲルマニウムを添加するステップを更に含む請求項1の方法。
- 前記ゲルマニウム前駆体がゲルマンを含む請求項19の方法。
- 前記ドーパント水素化物がアルシンを含む請求項1の方法。
- 前記ドーパント水素化物の前記フローが、約5〜約200sccmの範囲のアルシン(希釈ガス中で1%に希釈された)、若しくはアルシンの異なる希釈度に関して均等値である請求項21の方法。
- 前記ドーパント水素化物がホスフィンを含む請求項1の方法。
- トランジスタ構造のためのコンタクトを形成する方法であって、
画定されたソース活性領域及び画定されたドレイン活性領域を有する基板を提供するステップと、
前記ソース及びドレイン活性領域を、ジクロロシラン、ドーパント水素化物、及びエッチャントガスを含む前駆体混合物に露出して、それにより、前記ソース及びドレイン活性領域上に、インサイチュドープトエピタキシャル半導体層を選択的に堆積するステップとを含む方法。 - 露出するステップが、堆積圧力を約100torrより高く維持するステップを含む請求項24の方法。
- 露出するステップが、枚葉式ウェーハ堆積チャンバ内へ約200sccmより多いジクロロシランを提供するステップを含む請求項24の方法。
- 前記エピタキシャル半導体層が、約1mΩ・cm未満の堆積に応じた抵抗率を有する請求項24の方法。
- 前記エピタキシャル半導体層が、約0.8mΩ・cm未満の堆積に応じた抵抗率を有する請求項24の方法。
- 前記活性領域がリセスを備える請求項24の方法。
- 露出するステップが、堆積温度を約650℃〜約750℃の範囲に維持するステップを含む請求項24の方法。
- 露出するステップが、堆積温度を約450℃〜約650℃の範囲に維持するステップを含む請求項24の方法。
- 前記エッチャントガスがHClを含む請求項24の方法。
- シリコン含有層を堆積するための工程であって、
約100torrより高圧のチャンバを提供するステップと、
前記チャンバ内に収容された基板の全面に、ジクロロシラン及びドーパント水素化物をフローするステップと、
前記基板上に、約25nm min−1より速い速度でシリコン含有層を選択的に堆積するステップとを含む工程。 - 前記ドーパント水素化物がn型ドーパント水素化物である請求項33の方法。
- 前記シリコン含有層が約1019cm−3より高いドーパント濃度を有する請求項33の方法。
- 前記シリコン含有層が約1019cm−3〜約2×1021cm−3の範囲のドーパント濃度を有する請求項33の方法。
- 前記エピタキシャル堆積が選択的な堆積である請求項33の方法。
- 前記シリコン含有層が、約1mΩ・cm未満の堆積に応じた抵抗率を有する請求項33の方法。
- 前記シリコン含有層が、約0.8mΩ・cm未満の堆積に応じた抵抗率を有する請求項33の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US56503304P | 2004-04-23 | 2004-04-23 | |
US56590904P | 2004-04-27 | 2004-04-27 | |
PCT/US2005/013674 WO2005116304A2 (en) | 2004-04-23 | 2005-04-21 | In situ doped epitaxial films |
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JP2007535147A true JP2007535147A (ja) | 2007-11-29 |
JP2007535147A5 JP2007535147A5 (ja) | 2008-06-19 |
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JP2007509644A Withdrawn JP2007535147A (ja) | 2004-04-23 | 2005-04-21 | インサイチュドープトエピタキシャルフィルム |
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US (1) | US20050250298A1 (ja) |
EP (1) | EP1738001A2 (ja) |
JP (1) | JP2007535147A (ja) |
KR (1) | KR20070006852A (ja) |
WO (1) | WO2005116304A2 (ja) |
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JP2009521801A (ja) * | 2005-12-22 | 2009-06-04 | エーエスエム アメリカ インコーポレイテッド | ドープされた半導体物質のエピタキシャル堆積 |
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2005
- 2005-04-21 WO PCT/US2005/013674 patent/WO2005116304A2/en not_active Application Discontinuation
- 2005-04-21 JP JP2007509644A patent/JP2007535147A/ja not_active Withdrawn
- 2005-04-21 KR KR1020067021741A patent/KR20070006852A/ko not_active Application Discontinuation
- 2005-04-21 EP EP05780034A patent/EP1738001A2/en not_active Withdrawn
- 2005-04-25 US US11/113,829 patent/US20050250298A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009521801A (ja) * | 2005-12-22 | 2009-06-04 | エーエスエム アメリカ インコーポレイテッド | ドープされた半導体物質のエピタキシャル堆積 |
JP2007227565A (ja) * | 2006-02-22 | 2007-09-06 | Fujitsu Ltd | 半導体装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050250298A1 (en) | 2005-11-10 |
WO2005116304A3 (en) | 2007-01-25 |
WO2005116304A2 (en) | 2005-12-08 |
KR20070006852A (ko) | 2007-01-11 |
EP1738001A2 (en) | 2007-01-03 |
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