WO2005029549A2 - Method and system for facilitating bi-directional growth - Google Patents

Method and system for facilitating bi-directional growth Download PDF

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Publication number
WO2005029549A2
WO2005029549A2 PCT/US2004/030328 US2004030328W WO2005029549A2 WO 2005029549 A2 WO2005029549 A2 WO 2005029549A2 US 2004030328 W US2004030328 W US 2004030328W WO 2005029549 A2 WO2005029549 A2 WO 2005029549A2
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WIPO (PCT)
Prior art keywords
areas
grains
particular area
beamlets
solidified
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PCT/US2004/030328
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English (en)
French (fr)
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WO2005029549A3 (en
Inventor
James S. Im
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The Trustees Of Columbia University In The City Of New York
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Application filed by The Trustees Of Columbia University In The City Of New York filed Critical The Trustees Of Columbia University In The City Of New York
Publication of WO2005029549A2 publication Critical patent/WO2005029549A2/en
Publication of WO2005029549A3 publication Critical patent/WO2005029549A3/en
Priority to US11/372,161 priority Critical patent/US8663387B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

Definitions

  • the present invention relates to a method, system and mask for processing a thin-film semiconductor material, and more particularly to forming large-grained, grain- shaped and grain-boundary-location controlled semiconductor thin films from amorphous or polycrystalline thin films on a substrate by single-scanning the entire sample or at least one portion thereof using a sequential lateral solidification technique so as to promote a bi-directional growth of the grains in the resolidifying melted sample or in the portion(s) thereof.
  • the shaped beam is stepped over a sample of amorphous silicon (i.e., by translating the sample) to facilitate melting thereof and to effectuate the fonnation of grain-shape and grain boundary-controlled polycrystalline silicon upon the re-solidification of the sample.
  • a sample of amorphous silicon i.e., by translating the sample
  • Such techniques has been referred to a sequential lateral solidification ("SLS") of the melted portions of the sample to effectuate the growth of longer grain boundaries therein so as to achieve, e.g., uniformity among other thing.
  • SLS sequential lateral solidification
  • Various techniques processes, masks and samples have been previously described which utilize various SLS techniques, to effectively process the sample. For example, International Publication No.
  • 02/086954 describes a method and system for providing a single-scan, continuous motion sequential lateral solidification of melted sections of the sample being irradiated by beam pulses.
  • an accelerated sequential lateral solidification of the polycrystalline thin film semiconductors provided on a simple and continuous motion translation of the semiconductor film are achieved, without the necessity of "microtranslating" the thin film, and re-irradiating the previously irradiated region in the direction which is the same as the direction of the initial i ⁇ adiation of the thin film while the sample is being continuously translated.
  • One of the objects of the present invention is to increase the grain size of the melted and re-solidified SLS processed samples and/or portions thereof via limited i ⁇ adiation of such portions and/or sample for obtaining a desired grain length.
  • An object of the present invention is to provide techniques for producing large-grained and grain-shape and grain-boundary, location controlled polycrystalline thin film semiconductors using a sequential lateral solidification ("SLS") process, and to generate such silicon thin films in an accelerated manner by growing the grains bi- directionally within the re-solidifying areas.
  • SLS sequential lateral solidification
  • This and other objects can be achieved with an exemplary embodiment of a method and system for processing at least one portion of a thin film sample on a substrate, with such portion of the film sample having a first boundary and a second boundary.
  • an irradiation beam generator emits successive i ⁇ adiation beam pulses at a predetermined repetition rate.
  • Each of the irradiation beam pulses is masked to define one or more first beamlets and one or more second beamlets.
  • the film sample is continuously scanned at a constant predetermined speed.
  • one or more first areas of the film sample are successively i ⁇ adiated by the first beamlets so that the first areas are melted throughout their thickness, wherein each one of the first areas irradiated by the first beamlets of each of the i ⁇ adiation beam pulses is allowed to re-solidify and crystallize thereby having grains grown therein.
  • one or more second areas of the film sample are successively i ⁇ adiated by the second beamlets of the i ⁇ adiation beam pulses so that the second areas are melted throughout their thickness.
  • At least two of the second areas partially overlap a particular area of the re-solidified and crystallized first areas such that the grains provided in the particular area grow into each of the two of the second areas upon a re-solidification thereof. Further at least one of the two of the second areas overlaps a grain boundary provided within the particular area.
  • Figure 1 shows a diagram of an exemplary embodiment of a system for performing a single-scan, continuous motion sequential lateral solidification ("SLS") according to the present invention which does not require a microtranslation of a sample for an effective large grain growth in a thin film, and effectuates a bi-directional grain growth within the i ⁇ adiated and re-solidified area of the sample;
  • Figure 2 shows an enlarged illustration of a first exemplary embodiment of a mask utilized by the system and method of the present invention which facilitates the single-scan, continuous motion SLS as an intensity pattern generated thereby impinges the thin film on a substrate of the sample, and facilitates a bi-directional grain growth of the irradiated, melted and resolidifying sections of the thin film;
  • Figure 3 shows sequential SLS stages that use the i ⁇ adiation of the intensity pattern shaped by the pattern of the mask of
  • Figure 6A shows sequential SLS stages that use the i ⁇ adiation of the intensity pattern shaped by the pattern of the mask of Figure 2, and the grain structures on an exemplary sample having the silicon thin film thereon according to the first exemplary embodiment of the method of the present invention
  • Figure 6B shows an enlarged view of the re-solidified section of the sample shown in Fig.
  • Figure 6A that has been i ⁇ adiated by the masked intensity pattern of the beam
  • Figure 7 shows sequential SLS stages that use the i ⁇ adiation of the intensity pattern shaped by the pattern of the mask of Figure 2, and the grain structures on an exemplary sample having the silicon thin film thereon according to the first exemplary embodiment of the method of the present invention
  • Figure 8 shows sequential SLS stages that use the i ⁇ adiation of the intensity pattern shaped by the pattern of the mask of Figure 2, and the grain structures on an exemplary sample having the silicon thin film thereon according to the first exemplary embodiment of the method of the present invention
  • Figure 9 shows sequential SLS stages that use the i ⁇ adiation of the intensity pattern shaped by the pattern of the mask of Figure 2, and the grain structures on an exemplary sample having the silicon thin film thereon according to the first exemplary embodiment of the method of the present invention
  • Figure 10 shows sequential SLS stages that use the i ⁇ adiation of the intensity pattern shaped by the pattern of the mask of Figure 2, and the grain structures on an exemplary sample having the silicon thin film there
  • the exemplary system includes a Lambda Physik model LPX-315I XeCl pulsed excimer laser 110 emitting an i ⁇ adiation beam (e.g., a laser beam), a controllable beam energy density modulator 120 for modifying the energy density of the laser beam, a MicroLas two plate variable attenuator 130, beam steering mirrors 140, 143, 147, 160 and 162, beam expanding and collimating lenses 141 and 142, a beam homogenizer 144, a condenser lens 145, a field lens 148, a projection mask 150 which may be mounted in a translating stage (not shown), a 4x-6x eye piece 161, a controllable shutter 152, a multielement objective lens 163 for focusing an incident radiation beam pulse 164 onto a sample 1
  • an i ⁇ adiation beam e.g., a laser beam
  • a controllable beam energy density modulator 120 for modifying the energy density of the laser beam
  • the sample translation stage 180 may be controlled by the computer 106 to effectuate translations of the sample 40 in the planar X-Y directions and the Z direction. In this manner, the computer 106 controls the relative position of the sample 40 with respect to the irradiation beam pulse 164. The repetition and the energy density of the i ⁇ adiation beam pulse 164 may also be controlled by the computer 106. It should be understood by those skilled in the art that instead of the pulsed excimer laser 110, the i ⁇ adiation beam pulse can be generated by another known source of short energy pulses suitable for melting a semiconductor (or silicon) thin film. Such known source can be a pulsed solid state laser, a chopped continuous wave laser, a pulsed electron beam and a pulsed ion beam, etc.
  • the computer 100 may also be adapted to control the translations of the mask 150 and/or the excimer laser 110 mounted in an appropriate mask/laser beam translation stage (not shown for the simplicity of the depiction) to shift the intensity pattern of the irradiation beam pulses 164, with respect to the silicon thin film, along a controlled beam path.
  • Another possible way to shift the intensity pattern of the i ⁇ adiation beam pulse is to have the computer 100 control a beam steering minor.
  • the exemplary system of Figure 1 may be used to cany out the single-scan, continuous motion SLS processing of the silicon thin film on the sample 170 in the manner described below in further detail.
  • An amorphous silicon thin film sample may be processed into a single or polycrystalline silicon thin film by generating a plurality of excimer laser pulses of a predetermined fluence, controUably modulating the fluence of the excimer laser pulses, homogenizing the intensity profile of the laser pulse plane, masking each homogenized laser pulses to define beamlets, i ⁇ adiating the amorphous silicon thin film sample with the beamlets to effect melting of portions thereof that were i ⁇ adiated by the beamlets, and controUably and continuously translating the sample 170 with respect to the patterned beamlets.
  • the output of the beamlets is controUably modulated to thereby process the amorphous silicon thin film provided on the sample 170 into a single or grain-shape, grain-boundary-location controlled polycrystalline silicon thin film by the continuous motion sequential translation of the sample relative to the beamlets, and the i ⁇ adiation of the sample by the beamlets of masked irradiation pulses of varying fluence at corresponding sequential locations thereon.
  • One of the advantages of the system, method and mask according to the present invention is that there is a significant saving of processing time to i ⁇ adiate and promote the SLS on the silicon thin film of the sample by completing the i ⁇ adiation of a section of the sample 170 without requiring microtranslation of the sample (i.e., the microtranslations as described in the '954 Publication), as well as simultaneously allowing the grain growth to be effectuated in two directions, e.g., two opposite directions.
  • Figure 2 shows an enlarged illustration of a first exemplary embodiment of the mask 150 that shapes the beam being passed therethrough to produce an intensity pattern that impinges the thin film provided on the sample 170.
  • the slits of the mask 150 allow the respective portions of the beam 149 to i ⁇ adiate therethrough, while other sections of the mask 150 are opaque, and do not allow the portions of the beam 149 to be transmitted through these opaque sections.
  • This mask 150 includes a first set of slits 201, 211, 221, 226, 231, 236, 241, 246, 251, 256, 261, 266, 271 and 281 provided in a first conceptual row 200 of the mask 150, a second set of slits 301, 311, 321, 326, 331, 336, 341, 346, 351, 356, 361, 366 and 381 in a second conceptual row 300 of the mask 150, a third set of slits 401, etc.
  • each of the slits along the positive X-direction can be 315 ⁇ m, and the width thereof can be, e.g., 5.5 ⁇ m.
  • the dimensions of the slits may be the same as or proportional to the slit-shaped beamlets of the intensity pattern produced by passing the beam pulses through the mask 170.
  • Other sizes and shapes of the slits, and thus of the slit-shaped beamlets are conceivable (e.g., dot-shaped slits, chevron- shaped slits, etc.) and are within the scope of the present invention.
  • the second slit 211 of the first set of slits is provided adjacent to the first slit 201 at an offset thereof (along the positive X-direction).
  • a middle longitudinal extension 202 of the first slit 201 is provided on a longitudinal level 213 of the second slit 211 that is slightly below a top edge of this slit 211.
  • the third slit 221 and the fourth slit 226 are a ⁇ anged longitudinally parallel to one another, at an exemplary offset of 1.25 ⁇ m from each other. These third and fourth slits 221, 226 are provided at a horizontal offset from the second slit 211, in the positive X-direction.
  • a longitudinal extension 228 of the fourth slit 226 is provided on a middle longitudinal level 212 of the second slit 211, which is slightly below a top edge of the fourth slit 226.
  • a middle longitudinal extension 222 of the third slit 221 is provided approximately 4.0 ⁇ m from the top edge of the fourth slit 226.
  • the fifth and sixth slits 231, 236 are a ⁇ anged longitudinally parallel to one another, but at a distance that is greater than the distance between the third and fourth slits 221, 226.
  • a longitudinal extension 233 of the fifth slit 231 is provided along the extension of the bottom edge of the third slit 221
  • a longitudinal extension 238 of the sixth slit 236 is provided along the extension of the top edge of the fourth slit 226.
  • the bottom edge of the fifth slit 231 longitudinally extends (along the Y-direction) between the longitudinal extension 223 and the middle extension 222 of the third slit 221.
  • the top edge of the sixth slit 236 longitudinally extends (again along the Y-direction) between the longitudinal extension 228 and the middle extension 227 of the fourth slit 226.
  • the seventh and eighth slits 241, 246 are arranged even further from one another than the relative positioning of the fifth and sixth slits 231, 236, but in a similar manner with respect to these fifth and sixth slits 231, 236 (as they are associated with the third and fourth slits 221, 226.
  • the similar positioning description applies to the ninth and tenth slits 251, 256, then to eleventh and twelfth slits 261, 266, and finally to thirteenth and fourteenth slits 271, 281 of the first set of slits provided in the first conceptual row 200 of the mask 170.
  • the second set of slits provided in the second conceptual row 300 of the mask 150, as well as the slits provided in the third and fourth conceptual rows 400, 500 are a ⁇ anged in a substantially similar manner, with respect to one another, as described above for the slits provided in the first conceptual row 200.
  • longer grains can be grown on the thin film 52 in two opposite directions by utilizing a smaller number of shots than previously described.
  • the sample 170 is placed on the sample translation stage 180, which is controlled by the computer 100.
  • the sample 170 is placed such that the fixed position masked i ⁇ adiation beam pulse 164 (having the intensity pattern defined by the slits of the mask 150) impinges on a location away from the sample 170. Thereafter, the sample 170 is translated in the negative Y-direction, and gains momentum to reach a predetermined velocity before the masked i ⁇ adiation beam pulse 164 reaches and impinges a left edge of the sample 170.
  • the computer 100 controls the relative position of the sample 170 with respect to the masked i ⁇ adiation beam pulse 164 which i ⁇ adiates the thin film provided on the sample 170.
  • FIG. 3 shows the initial impingement and i ⁇ adiation of the sample 170 by the first set of intensity patterns produced by passing the beam pulses through the slits of the mask 150 when the translation stage 180 positions the sample 170 to be impinged and i ⁇ adiated by a portion of the intensity pattern produced using the mask 150.
  • the intensity pattern that are defined as beamlets and shaped by the first slits 201, 301, 401, etc.
  • portions 601, 701, 801 are situated at one edge of the sample 170, and their positioning with respect to one another is either substantially similar or proportional to the positioning of the first slits 201, 301, 401, and to the shape thereof. Then, the portions 601, 701 801 begin to resolidify, and the grains provided at the edges of these portions seed the melted and resolidifying portions 601, 701, 801 and grow toward the center of each of the respective portions 601, 701, 801.
  • the previously-i ⁇ adiated portions 601, 701, 801 are re-solidified and crystallized into co ⁇ esponding processed polycrystalline regions 602, 702, 802.
  • the sample 170 is continuously translated in the negative Y- direction by the computer 100 using the sample translation stage 180.
  • the computer causes the next beam pulse to be passed through the mask 170 so as to provide a second set of intensity patterns.
  • the intensity pattern/beamlets that are shaped by the first and second slits 201, 211 of the first set of the slits of the first conceptual row 200 of the mask 150 impinge, i ⁇ adiate, and fully melt throughout the entire thiclcness the corresponding portions 611, 616 of the respective first conceptual row 250 of the sample 170.
  • the first and second slits 301, 311 of the second set of the slits of the second conceptual row 300 of the mask 150 impinge, i ⁇ adiate, and fully melt throughout the entire thickness the co ⁇ esponding portions 711, 716 of the respective second conceptual row 350 of the sample 170.
  • the first and second slits 401, 411 of the second set of the slits of the third conceptual row 400 of the mask 150 impinge, i ⁇ adiate, and fully melt throughout the entire thickness the co ⁇ esponding portions 811, 816 of the respective third conceptual row 450 of the sample 170.
  • the portions 616, 716, 816 partially overlap and are provided slightly below the respective re-solidified portions 602, 702, 802.
  • these portions 616, 716, 816 re-melt certain areas of the respective portions 602, 702, 802.
  • the top edge of the respective melted portions 616, 716, 816 are provided slightly above middle longitudinal extensions of the respective re-solidified portions 602, 702, 802 that correspond to middle extensions 202, 30, 402 of the respective first slits 201, 301, 401.
  • the i ⁇ adiated melted portions 611, 711, 811 extend along substantially the same longitudinal direction (i.e., along the X- direction) as that of the re-solidified portions 602, 702, 802, and are provided at an offset in the X-direction from these re-solidified portions 602, 702, 802.
  • the left edge of each of the portions 611, 711, 811 can either abut or overlap the right edge of each of the co ⁇ esponding portions 602, 702, 802.
  • the melted portions 611, 711, 811 begin to resolidify, and the grain growth thereof occurs substantially the same as that of the portions 601, 701, 801.
  • the melted portions 616, 716, 816 also begin to resolidify.
  • the grain growth from the bottom edges thereof occurs in a substantially the same manner as that of the portions 611, 711, 811.
  • the top edge of each of the portions 616, 716, 816 overlaps the middle longitudinal extensions of the re-solidified portions 602, 702, 802, respectively, the grains prevalent above these middle extensions in the re-solidified portions 602, 702, 802 seed the melted and resolidifying portions 616, 716, 816 from the top edges thereof and grow toward the center of each of the respective portions 616, 716, 816.
  • the grains grown in the re-solidified portions 602, 702, 802 extend into the resolidifying portions 616, 716 and 816, respectively.
  • the previously-irradiated portions 611, 711, 811 are re-solidified and crystallized into co ⁇ esponding processed polycrystalline regions 603, 703, 803.
  • the solidification of the previously-i ⁇ adiated portion 616, 716, 816 are re-solidified into new co ⁇ esponding processed polycrystalline regions 602, 702, 802. Then, when the sample 170 reaches the next sequential location with respect to the impingement of the beam pulse, the computer 100 again causes the next beam pulse to be passed through the mask 170 so as to provide a third set of intensity patterns.
  • the intensity pattern/beamlets that are shaped by the first, second, third and fourth slits 201, 211, 221, 226 of the first set of the slits of the first conceptual row 200 of the mask 150 impinge, irradiate, and fully melt throughout the entire thickness the corresponding portions 621,
  • 623, 624, 723, 724, etc. are spaced apart from one another in substantially the same manner (or directly proportional to) the spacing between the respective slits 221, 226, 321, 326, etc.
  • the melted third portions 623, 723, 823 partially overlap and are provided slightly above thee respective re-solidified portions 602, 702, 802.
  • the melted fourth portions 624, 724, 824 partially overlap and are provided slightly below the respective re-solidified portions 602, 702, 802.
  • these portions 623, 624, 723, 724, 823, 824 re-melt certain areas of the respective portions 602, 702, 802.
  • the bottom edges of the third melted portions 623, 723, 823 are provided slightly below the top edge of the respective re-solidified portions 602, 702, 802.
  • the top edge of the respective melted fourth portions 624, 724, 824 are provided slightly above middle longitudinal extensions of the respective previously re- solidified portions 602, 702, 802 that co ⁇ espond to middle extensions 202, 302, 402 of the respective second slits 211, 311, etc.
  • the left edges of each of the portions 623, 624, 723, 724, 823, 824 can either abut or overlap the right edge of each of the co ⁇ esponding re-solidified portions 602, 702, 802.
  • the melted portions 621-622, 721-722, 821-822 begin to resolidify, and the grain growth thereof occurs in substantially the same manner as that of the portions 611, 616, 711, 716, 811, 816.
  • the seeds in the previously solidified portion 602 seeds the grains to grow into the third portion 623 and fourth portion 624.
  • the grains of the portion 602 grow into the third portion 623 from the bottom edge thereof, and into the fourth portion 624 from the top edge thereof.
  • the melted portions 616, 716, 816 also begin to resolidify.
  • each of the portions 624, 724, 824 overlaps the middle longitudinal extensions of the previously re-solidified portions 602, 702, 802, respectively.
  • the grains prevalent above these middle extensions in the re-solidified portions 602, 702, 802 seed the melted and resolidifying fourth portions 624, 724, 824 from the top edges thereof and grow toward the center of each of the respective portions 624, 724, 824.
  • the grains from the bottom edge of the fourth portions 624, 724, 824 and those from the top edges thereof grow toward the center of each of the respective fourth portions 624, 724, 824.
  • the grains from the top edge of the third portions 623, 723, 823 and those from the bottom edges thereof also grow toward the center of each of the respective third portions 623, 723, 823.
  • the grains grown in the re-solidified portions 602, 702, 802 extend into the resolidifying portions 616, 716 and 816, respectively.
  • the enlarged view of a section of the portions of the second conceptual row 350 of the sample 170 that re-solidified from the melted portions 721-724 is illustrated in Figure 5B.
  • the portion 704 re-solidified from the first melted portion 721.
  • the previously-re-solidified portion 703 seed the second melted portion 722 such that the grains of the portion 703 grow downward (in the negative Y-direction), while the grains from the bottom edge of the solidifying second portion 722 grow upward to meet the grains growing downward from the solidified portion 703, thereby forming a boundary there between, and form the newly solidified section 703 and another solidified section 703'. Additionally, the previously-re-solidified portion 702 seed both of the third and fourth melted portions 723, 724.
  • the grains of the previously resolidified portion 702 grow upward (in the Y-direction) into the resolidifying third portion 723, while the grains from the top edge of the solidifying third portion 723 grow downward to meet the grains growing upward from the solidified portion 702, so as to form a boundary there between.
  • the grains of the portion 702 grow downward (in the negative Y-direction) into the resolidifying fourth portion 724, while the grains from the bottom edge of the solidifying fourth portion 724 grow upward to meet the grains growing downward from the solidified portion 702, so as to form a boundary there between.
  • the grains of the new solidified portions 702 are extended bi- directionally to reach the middle sections of the third and fourth re-solidified portions 723, 724.
  • the other half sections of the third and fourth sections 723, 724 have different grains therein, thus forming re-solidified portions 705', 705", respectively. Then, as shown in Figure 6A, when the sample 170 reaches the next sequential location with respect to the impingement of the beam pulse, the computer 100 further causes the next beam pulse to be passed through the mask 170 so as to provide a fourth set of intensity patterns.
  • the intensity pattern/beamlets that are shaped by the first, second, third, fourth, fifth and sixth slits 201, 211, 221, 226, 231, 236 of the first set of the slits of the first conceptual row 200 of the mask 150 impinge, i ⁇ adiate, and fully melt throughout the entire thickness the co ⁇ esponding portions 631-626 of the respective first conceptual row 250 of the sample 170.
  • the first, second, third, fourth, fifth and sixth slits 301, 311, 321, 326, 331, 336 of the second set of the slits of the second conceptual row 300 of the mask 150 impinge, i ⁇ adiate, and fully melt throughout the entire thickness the co ⁇ esponding portions 731-736 of the respective second conceptual row 350 of the sample 170. Similar applies to the respective third conceptual row 450 of the sample 170.
  • Figure 6A shows that the positioning of the respective first and second portions 631-634, 731-734, 831-834 with respect to the re-solidified portion 603, 703, 803 is substantially the same as that of the respective first and second portions 621-624, 721-724, 821-824 with respect to the re-solidified portion 603, 603', 604, 703, 703', 704, 803, 803', 803, and thus shall not be described in further detail herein.
  • Each pair of the fifth and sixth portions 635, 636, 735, 736, etc. are spaced apart from one another in a substantially the same manner (or directly proportional to) the spacing between the respective slits 231, 226, 331, 326, etc.
  • the melted third portions 633, 733, 833 partially overlap and are provided slightly above thee respective re-solidified portions 603, 703, 803.
  • the melted fourth portions 634, 734, 834 partially overlap and are provided slightly below the respective re-solidified portions 603, 703, 803. In addition, these melted fourth portions 634, 734, 834 completely cover the re-solidified portions 703'.
  • the melted fifth portions 635, 735, 835 partially overlap and are provided slightly above thee respective re-solidified portions 602, 702, 802. In addition, the melted fifth portions 635, 735, 835 completely cover the re-solidified portions 705'.
  • the melted sixth portions 636, 736, 836 partially overlap and are provided slightly below the respective resolidified portions 602, 702, 802.
  • these portions 623, 624, 723, 724, 823, 824 re- melt certain areas of the respective portions 602, 702, 802.
  • the melted sixth portions 636, 736, 836 completely cover the re-solidified portions 705".
  • the bottom edges of the fifth melted portions 635, 735, 835 are provided slightly below the respective boundaries between the re-solidified portions 605-605', 705-705', 805-805'.
  • the top edges of the sixth melted portions 636, 736, 836 are provided slightly above the respective boundaries between the re-solidified portions 605-605", 705-705", 805-805".
  • the enlarged view of a section of the portions of the second conceptual row 350 of the sample 170 that re-solidified from the melted portions 731-736 is illustrated in Figure 6B. hi particular, the portion 706 re-solidified from the first melted portion 731.
  • the previously-re-solidified portion 704 seed the second melted portion 732 such that the grains of the portion 704 grow downward (in the negative Y-direction), while the grains from the bottom edge of the solidifying second portion 732 grow upward to meet the grains growing downward from the solidified portion 703, thereby forming a boundary there between, and form the newly solidified section 703 and another solidified section 703'.
  • the previously-re-solidified portion 703 seeds both of the third and fourth melted portions 733, 734, and other portions 703', 703" are formed as discussed above with reference to portions 705', 705".
  • the grains of the previously resolidified portion 702 grow further upward (in the Y-direction) into the resolidifying fifth portion 735, while the grains from the top edge of the solidifying fifth portion 735 grow downward to meet the grains growing upward from the solidified portion 702, so as to form a boundary there between.
  • the grains of the portion 702 grow downward (in the negative Y-direction) into the resolidifying sixth portion 736, while the grains from the bottom edge of the solidifying sixth portion 736 grow upward to meet the grains growing downward from the solidified portion 702, so as to form a boundary there between.
  • the grains of the new solidified portions 702 are again further extended bi-directionally to reach the middle sections of the fifth and sixth re-solidified portions 735, 736.
  • the other half sections of the fifth and sixth portions 735, 736 have different grains therein, thus forming new re-solidified portions 705', 705", respectively.
  • the larger grain i.e., grain length along the axis parallel to the lateral growth
  • This exemplary procedure according to the present invention continues as shown in Figures 7-10, as the pattern of the slits of the mask 150 are utilized to shape the beam pulses irradiating predetermined portions of the sample 170, as the computer continuously translates the sample with the aid of the translation stage 180.
  • the computer continuously translates the sample to provide further melt regions 641-648, 741-748, and 841-848, as shown in Figure 7, melt regions 651-659, 751-759 and 851- 859, as shown in Figure 8, melt regions 661-669, 761-769 and 861-869, as shown in Figure 9 and melt regions 671-680, 771-780 and 871-880, as shown in Figure 10, which are re-solidified to form new solidified portions extending bi-directionally.
  • the grains in the portions 602, 702, 802 are continuously grown in opposite directions (i.e., bi-directionally) using n-number of shots, continuous motion SLS technique described herein above, thereby increasing the length thereof via a relatively small number of pulses.
  • the conceptual rows 250, 350, 450 of the sample processed according to the exemplary embodiment of the present invention described herein above are shown in Figure 11, with respective portions 602, 702, 802 having long polycrystalline grains provided therein.
  • the length of the grains can be provided as follows: L G ⁇ 2 (N s ) x D M s,
  • L G is the length of the particular grain
  • Ns is the number of shots affecting such particular grain
  • D MS is the distance from one step to the next (i.e., microstep).
  • the computer 100 can be programmed such that it controls the translations stage 180 to translate the sample 170 in a predetermined manner such that only the pre-selected sections of the sample 170 are i ⁇ adiated. In fact, it is possible to process not only conceptual rows of the sample, but also column, regular shaped sections and irregular-shaped section.
  • the computer can also control the triggering of the beam pulse to be performed when the sample 170 is translated to a predetermined position for i ⁇ adiation.
  • These patterns in the mask 170, as well as other possible patterns that can be used for obtaining bi- directional grain growth according to the continuous motion SLS procedure described above are shown and described in U.S. Patent No. 6,555,449, the entire disclosure of which is incorporated herein by reference.
  • step 1000 the hardware components of the system of Figure 1, such as the excimer laser 110, the beam energy density modulator 120, the beam attenuator 130 and the shutter 152 are first initialized at least in part by the computer 100.
  • a sample 170 is loaded onto the sample translation stage 180 in step 1005. It should be noted that such loading may be performed either manually or automatically using known sample loading apparatus under the control of the computer 100.
  • the sample translation stage 180 is moved, preferably under the control of the computer 100, to an initial position in step 1010.
  • the various other optical components of the system are adjusted manually or under the control of the computer 100 for a proper focus and alignment in step 1015, if necessary.
  • the radiation beam pulses 164 are then stabilized in step 1020 to a desired intensity, pulse duration and pulse repetition rate.
  • step 1021 it is determined whether a next radiation beam pulse i ⁇ adiates the silicon thin film 170 after each melted region thereof has completely re-solidified following the i ⁇ adiation by a previous radiation beam pulse. If not, in step 1022, the pulse repetition rate of the excimer laser 110 is adjusted.
  • step 1024 it is determined whether each beamlet of the intensity pattern of each radiation beam pulse has sufficient intensity to melt each one of the thin film i ⁇ adiated thereby throughout its entire thickness without melting an adjacent region overlapped by a shadow region of the intensity pattern. If under-melting or over melting occurs, in step 1025, the attenuator 130 is adjusted so that each radiation beam pulse has sufficient energy to fully melt the metal layer in i ⁇ adiated areas without over melting adjoining uni ⁇ adiated regions.
  • step 1027 the sample 170 is positioned to point the masked i ⁇ adiated beam pulse 164 at the conceptual rows 250, 350, 450 of the sample 170.
  • step 1030 the sample 170 is i ⁇ adiated using the radiation beam pulse 164 having an intensity pattern controlled by the mask 150.
  • step 1035 the sample 170 is continuously translated so that the masked irradiated beam pulse 164 continuously i ⁇ adiates the thin film of the sample 170 in a predetermined direction, and pursuant to the exemplary procedure described above with reference Figures 3-11.
  • step 1045 it is determined whether the sample 170 (or desired portions thereof) has been subjected to the above-described SLS processing. If not, the sample 170 is translated such that the uni ⁇ adiated desired area or the sample 170 can be i ⁇ adiated and processed according to the present invention, and the process loops back to step 1030 for further processing.

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PCT/US2004/030328 2003-09-16 2004-09-16 Method and system for facilitating bi-directional growth WO2005029549A2 (en)

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