AU2001234610A1 - Micro electro-mechanical component and system architecture - Google Patents

Micro electro-mechanical component and system architecture

Info

Publication number
AU2001234610A1
AU2001234610A1 AU2001234610A AU3461001A AU2001234610A1 AU 2001234610 A1 AU2001234610 A1 AU 2001234610A1 AU 2001234610 A AU2001234610 A AU 2001234610A AU 3461001 A AU3461001 A AU 3461001A AU 2001234610 A1 AU2001234610 A1 AU 2001234610A1
Authority
AU
Australia
Prior art keywords
system architecture
mechanical component
micro electro
electro
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001234610A
Inventor
Joseph L. Chovan
Daniel W. Steele
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
Lockheed Corp
Lockheed Martin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Corp, Lockheed Martin Corp filed Critical Lockheed Corp
Publication of AU2001234610A1 publication Critical patent/AU2001234610A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
AU2001234610A 2000-01-31 2001-01-29 Micro electro-mechanical component and system architecture Abandoned AU2001234610A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17906700P 2000-01-31 2000-01-31
US60179067 2000-01-31
PCT/US2001/002760 WO2001056067A1 (en) 2000-01-31 2001-01-29 Micro electro-mechanical component and system architecture

Publications (1)

Publication Number Publication Date
AU2001234610A1 true AU2001234610A1 (en) 2001-08-07

Family

ID=22655099

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001234610A Abandoned AU2001234610A1 (en) 2000-01-31 2001-01-29 Micro electro-mechanical component and system architecture

Country Status (3)

Country Link
US (1) US6780672B2 (en)
AU (1) AU2001234610A1 (en)
WO (1) WO2001056067A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6660564B2 (en) * 2002-01-25 2003-12-09 Sony Corporation Wafer-level through-wafer packaging process for MEMS and MEMS package produced thereby
US7023347B2 (en) * 2002-08-02 2006-04-04 Symbol Technologies, Inc. Method and system for forming a die frame and for transferring dies therewith
TWI360707B (en) * 2002-08-19 2012-03-21 Univ Columbia Process and system for laser crystallization proc
WO2004102634A2 (en) 2003-04-16 2004-11-25 The Regents Of The University Of California Metal mems devices and methods of making same
WO2004112096A2 (en) * 2003-06-12 2004-12-23 Symbol Technologies, Inc. Method and system for high volume transfer of dies to substrates
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
TWI359441B (en) * 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
US7019394B2 (en) * 2003-09-30 2006-03-28 Intel Corporation Circuit package and method of plating the same
US7518251B2 (en) * 2004-12-03 2009-04-14 General Electric Company Stacked electronics for sensors
US20060225273A1 (en) * 2005-03-29 2006-10-12 Symbol Technologies, Inc. Transferring die(s) from an intermediate surface to a substrate
US20070107186A1 (en) * 2005-11-04 2007-05-17 Symbol Technologies, Inc. Method and system for high volume transfer of dies to substrates
US8466563B2 (en) 2010-05-19 2013-06-18 The Johns Hopkins University Apparatus and methods for 3-D stacking of thinned die
TWI473218B (en) 2012-07-26 2015-02-11 Unimicron Technology Corp Through-hole medium board, package substrate, and method of forming the same
JP6788202B2 (en) 2016-11-01 2020-11-25 富士通株式会社 Electronic devices, manufacturing methods of electronic devices and electronic devices

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748495A (en) * 1985-08-08 1988-05-31 Dypax Systems Corporation High density multi-chip interconnection and cooling package
US4764846A (en) * 1987-01-05 1988-08-16 Irvine Sensors Corporation High density electronic package comprising stacked sub-modules
US4868712A (en) * 1987-02-04 1989-09-19 Woodman John K Three dimensional integrated circuit package
US5014419A (en) * 1987-05-21 1991-05-14 Cray Computer Corporation Twisted wire jumper electrical interconnector and method of making
US4918335A (en) * 1987-11-06 1990-04-17 Ford Aerospace Corporation Interconnection system for integrated circuit chips
US5107586A (en) * 1988-09-27 1992-04-28 General Electric Company Method for interconnecting a stack of integrated circuits at a very high density
US5276455A (en) * 1991-05-24 1994-01-04 The Boeing Company Packaging architecture for phased arrays
US5432999A (en) * 1992-08-20 1995-07-18 Capps; David F. Integrated circuit lamination process
US5693981A (en) * 1993-12-14 1997-12-02 Lsi Logic Corporation Electronic system with heat dissipating apparatus and method of dissipating heat in an electronic system
US5380681A (en) * 1994-03-21 1995-01-10 United Microelectronics Corporation Three-dimensional multichip package and methods of fabricating
US5530288A (en) * 1994-10-12 1996-06-25 International Business Machines Corporation Passive interposer including at least one passive electronic component
US5579207A (en) * 1994-10-20 1996-11-26 Hughes Electronics Three-dimensional integrated circuit stacking
JP2809122B2 (en) * 1994-12-26 1998-10-08 日本電気株式会社 Wiring structure of semiconductor integrated circuit and method of manufacturing the same
JP2944449B2 (en) * 1995-02-24 1999-09-06 日本電気株式会社 Semiconductor package and manufacturing method thereof
US6002177A (en) * 1995-12-27 1999-12-14 International Business Machines Corporation High density integrated circuit packaging with chip stacking and via interconnections
US5814536A (en) * 1995-12-27 1998-09-29 Lsi Logic Corporation Method of manufacturing powdered metal heat sinks having increased surface area
FR2745973B1 (en) * 1996-03-08 1998-04-03 Thomson Csf MASS MEMORY AND METHOD FOR MANUFACTURING MASS MEMORY
JP2964983B2 (en) * 1997-04-02 1999-10-18 日本電気株式会社 Three-dimensional memory module and semiconductor device using the same
KR100280398B1 (en) * 1997-09-12 2001-02-01 김영환 Manufacturing method of stacked semiconductor package module
US6020629A (en) * 1998-06-05 2000-02-01 Micron Technology, Inc. Stacked semiconductor package and method of fabrication

Also Published As

Publication number Publication date
WO2001056067A1 (en) 2001-08-02
US20030022417A1 (en) 2003-01-30
US6780672B2 (en) 2004-08-24

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