US20130043429A1 - Chlorinated oligogermanes and method for the production thereof - Google Patents
Chlorinated oligogermanes and method for the production thereof Download PDFInfo
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- US20130043429A1 US20130043429A1 US13/512,760 US201013512760A US2013043429A1 US 20130043429 A1 US20130043429 A1 US 20130043429A1 US 201013512760 A US201013512760 A US 201013512760A US 2013043429 A1 US2013043429 A1 US 2013043429A1
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- oligogermane
- chlorinated
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- chlorine
- germanium
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- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 72
- 239000000203 mixture Substances 0.000 claims abstract description 59
- 150000001875 compounds Chemical class 0.000 claims abstract description 46
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 41
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 125000004429 atom Chemical group 0.000 claims abstract description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 43
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 claims description 11
- 239000012442 inert solvent Substances 0.000 claims description 8
- 229910006113 GeCl4 Inorganic materials 0.000 claims description 7
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 238000001237 Raman spectrum Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000003085 diluting agent Substances 0.000 claims description 5
- 238000004508 fractional distillation Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 13
- 239000012320 chlorinating reagent Substances 0.000 description 10
- 125000001424 substituent group Chemical group 0.000 description 7
- 238000005660 chlorination reaction Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 230000007812 deficiency Effects 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 238000004821 distillation Methods 0.000 description 3
- KLBANGDCFBFQSV-UHFFFAOYSA-N Cl[Ge](Cl)(Cl)[Ge](Cl)(Cl)Cl Chemical compound Cl[Ge](Cl)(Cl)[Ge](Cl)(Cl)Cl KLBANGDCFBFQSV-UHFFFAOYSA-N 0.000 description 2
- 125000001246 bromo group Chemical group Br* 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QHGIKMVOLGCZIP-UHFFFAOYSA-N germanium dichloride Chemical compound Cl[Ge]Cl QHGIKMVOLGCZIP-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- MUDDKLJPADVVKF-UHFFFAOYSA-N trichlorogermane Chemical compound Cl[GeH](Cl)Cl MUDDKLJPADVVKF-UHFFFAOYSA-N 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- 238000004241 73Ge NMR spectroscopy Methods 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910006111 GeCl2 Inorganic materials 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000013558 reference substance Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- -1 silicon halides Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
- C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Definitions
- This disclosure relates to chlorinated oligogermanes and mixtures of chlorinated oligogermanes which have a molar germanium:chlorine ratio of 1:2 to 1:3 and also to a method for producing such chlorinated oligogermanes and oligogermane mixtures.
- Germanium dichloride can more particularly be produced thermally from trichlorogermane (HGeCl 3 ) (cf. Holleman Wiberg, Lehrbuch der Anorganischen Chemie, Walter De Gruyter Verlag, 102 nd edition, p. 1013 or C. E. Rick, T. D. McKinley, J. N. Tully (PB No. 96945 [1944] 1/10)).
- HGeCl 3 trichlorogermane
- WO 08/110386 A1 discloses a method and apparatus for production of halogenated polygermanes from halogermanes in a plasma-chemical way.
- Halogenated oligogermanes are little known apart from hexachlorodigermane, which is described in the literature.
- a chlorinated oligogermane as a pure compound or mixture of compounds which each have at least one direct Ge—Ge bond, substituents of which include chlorine or chlorine and hydrogen and atom ratio for substituent:germanium is at least 2:1 in the composition thereof, wherein a) the mixture has on average a Ge:Cl ratio of 1:1 to 1:3, or the pure compound has a Ge:Cl ratio of 1:2 to 1:2.67, and b) the mixture has an average number of germanium atoms of 2 to 8.
- We also provide a method for producing a halogenated oligogermane including A) providing a chlorinated polygermane, and B) chlorinating the chlorinated polygermane with chlorine, a chlorine-releasing compound and/or a chlorine-containing gas.
- the chlorinated oligogermanes (as pure compound) and the mixture of such chlorinated oligogermanes have at least one direct germanium-germanium bond, the substituents of which comprise either chlorine or chlorine and hydrogen, or at least one direct germanium-germanium bond, the substituents of which consist of chlorine or of chlorine and hydrogen.
- the atom ratio therein for substituent:germanium is at least 2:1.
- the chlorinated oligogermanes as pure compound have a germanium:chlorine ratio of 1:2 to 1:2.67.
- the mixtures of chlorinated oligogermanes further have a germanium:chlorine ratio of 1:1 to 1:3 and more particularly 1:2 to 1:3 and also an average number of germanium atoms per molecule of 2 to not more than 8.
- the mixture of chlorinated oligogermanes is more particularly to be understood as meaning that only some of the compounds present therein need have at least one direct germanium-germanium bond with the abovementioned substituents.
- the general case is that at least two such compounds having a direct germanium-germanium bond will be present in the mixture, but frequently three or more. In the general case, moreover, it is exclusively compounds having such a defined germanium-germanium bond which will be present in such a mixture with or without any tetrachlorogermane.
- Chlorinated oligogermanes are more particularly compounds of the formula Ge n X 2n+2 where n is not more than 8, or mixtures of chlorinated oligogermanes having an average n of not more than 8, where X is more particularly chlorine or else chlorine and hydrogen. In the individual case, single chlorine atoms can be replaced by bromine atoms, but generally there will be no bromine. Chlorinated polygermanes are accordingly more particularly compounds of the formula Ge n X 2n+2 where n >8.
- the chlorine content of the pure compounds, or the average chlorine content of a mixture, is determined herein by completely digesting the sample and then titrating the chloride by the Mohr method.
- the hydrogen content is determined by integration of 1 H NMR spectrum using an internal standard and comparing the integrals obtained at known mixing ratio.
- the molar masses of halogenated oligogermanes and the average molar masses of mixtures thereof are determined via freezing point depression.
- the recited parameters of chlorine content, molar mass and, if appropriate, hydrogen content can be used to determine the chlorine:germanium ratio and also the average number of germanium atoms per molecule directly.
- the chlorinated oligogermanes are obtainable in one example by chlorinating chlorinated polygermanes. Chlorinated oligogermanes thus obtained then generally have a heightened kinetic stability, more particularly with regard to the further chlorination of the oligochlorogermanes since the most reactive molecules in the chlorinated polygermane mixture will have already reacted.
- the chlorinated oligogermanes are more particularly suitable for applications where the chlorinated germanes are further processed under oxidizing conditions.
- An example is the application of layers of the chlorinated oligogermanes onto substrates in oxidizing atmospheres such as atmospheres containing chlorine gas, for example.
- the oligogermanes are obtained by splitting chlorinated polygermanes (PCGs) using an oxidizing agent.
- Chlorine and/or HCl are more particularly useful here as oxidizing agent, in which case the splitting can also be performed such that either an excess of the oxidizing agent is present or that the oxidizing agent is always present at low concentration only.
- the chlorinated polygermanes used as starting material are more particularly obtainable thermally as per Holleman Wiberg, Lehrbuch der Anorganischen Chemie, Walter De Gruyter Verlag, 102 nd edition, p. 1013 or C. E. Rick, T. D. McKinley, J. N. Tully (PB No. 96945 [1944] 1/10).
- trichlorogermane HGeCl 3
- HCl HCl
- Plasma-chemically obtained chlorinated polygermanes can also be used as an alternative or additional starting material, more particularly chlorinated polygermanes as described in WO 2008/110386 A1, the subject matter of which is incorporated herein by reference.
- the chlorinated polygermanes can also be plasma-chemically produced similarly to chlorinated polysilanes, methods for production of which are described, for example, in WO 2006/125425 A1 and WO 2009/143823 A2.
- the corresponding germanium compounds are then used as starting material, while the concrete plasma-chemical production is essentially identical to that of the corresponding silanes except that the power density of the irradiation should be lower than for the corresponding silanes.
- the power density should correspond to about 50 to 67% of the power density (in watts per cm 3 ) which is described in the two above-mentioned publications.
- the subject matter of WO 2006/125425 A1 and WO 2009/143823 A2 is incorporated herein by reference.
- the mixture of oligogermanes has a higher solubility in inert solvents than at least one and typically two or more of the respective individual components of the mixture insofar as these individual components have more than 3 germanium atoms.
- Individual components are more particularly all the components that are present in the mixture at not less than 1 wt %.
- Individual components further more particularly include the respective perchlorinated compounds n-tetragermane, isotetragermane, n-pentagermane, isopentagermane and/or neopentagermane.
- the solubility of the mixture of oligogermanes is heightened compared with at least one of these compounds, usually compared with three or more than three of the recited compounds and frequently also compared with all recited compounds.
- Inert solvents here and hereinbelow are more particularly non-nucleophilic aprotic solvents, of which in turn the solvents toluene, benzene and cyclohexane must be mentioned more particularly.
- the above-mentioned mixture of oligogermanes preferably has a higher solubility than the individual components having more than 3 germanium atoms in one or more of the recited preferred solvents at least.
- any reference herein to a higher or better solubility in inert solvents is to be understood as meaning that the specific solvent is capable of dissolving at room temperature a larger amount of chemical compound or of the mixture of chemical compounds before saturation is reached, while not more than 5 wt % of the amount used may remain as solid material.
- the determinative amount here is not for instance the molar amount, but the amount used (in g) of the still just soluble oligogermane/polygermane as individual compound or as mixture.
- the mixture of oligogermanes has particularly good solubility because the various components appear to act as reciprocal solubilizers.
- the mixture of oligogermanes is also superior to the pure individual compounds since it is not just the case that the higher kinetic stability is advantageous, but it is generally also the case that when operating in solution more solvent is required for a specific further use.
- the chlorinated oligogermane mixtures have a higher solubility in inert solvents than the known thermally produced chlorinated polygermanes as described in Holleman Wiberg, Lehrbuch der Anorganischen Chemie, Walter De Gruyter Verlag, 102 nd edition, p. 1013 or C. E. Rick, T. D. McKinley, J. N. Tully (PB No. 96945 [1944] 1/10).
- a particularly interesting fraction of chlorinated oligogermane mixtures is the fraction with essentially no germanium tetrachloride, no Ge 2 Cl 6 and no Ge 3 Cl 8 left.
- This fraction can be isolated via fractional distillation from an as-obtained crude mixture of our chlorinated oligogermanes, and is hereinafter referred to as “fraction of compounds having more than three germanium atoms”.
- Germanium tetrachloride, Ge 2 Cl 6 and Ge 3 Cl 8 can be removed, for example, by distillation at 0.01 to 0.1 hPa (i.e., in an oil pump vacuum for example) and room temperature so that the fraction of compounds having more than three germanium atoms may be separated off.
- the fraction of compounds having more than three germanium atoms is obtained by distillation, as mentioned, or else by crystallization and, hence, has essentially no germanium tetrachloride, hexachlorodigermane and octachlorotrigermane left. Essentially it is to be understood as meaning that the compounds mentioned are present at not more than 10 wt % in that the proportion of these three compounds is typically less than 5 wt % and usually even less than 2 wt %. Ultrahigh-vacuum distillation can be used to effect a concrete determination of the remaining level of these compounds.
- the fraction of compounds having more than three germanium atoms generally has a heightened degree of branching (as can be evidenced using IR or Raman spectroscopy) and correspondingly has a particularly good kinetic stability.
- Branching occurs with germanium atoms having bonds leading to three further germanium atoms (that is, they are tertiary germanium atoms) and with germanium atoms having bonds leading to four further germanium atoms (that is, they are quaternary germanium atoms).
- the fraction of compounds having more than three germanium atoms has a more than 8 atom % fraction and more particularly more than 11 atom % fraction of branching sites.
- at least 8% and more particularly more than 11% of the germanium atoms in the mixture are tertiary or quaternary germanium atoms.
- the degree of branching here can be determined via Raman spectra from the significant bands for vibrations of germanium-germanium bonds involving tertiary or quaternary germanium atoms.
- the perchlorinated neopentagermane within the fraction of compounds having more than three germanium atoms has a share of at least 10 atom %, more particularly more than 18 atom % and more particularly more than 25 atom %.
- the proportion of this compound can be quantified via the signal for the quaternary germanium atom in 73 Ge NMR. The content can be determined versus a known internal reference substance of known quantity (for example, an ampoule with tetramethylgermanium) by integration.
- the fraction of chlorinated oligogermane mixtures having more than 3 germanium atoms has a germanium:chlorine ratio of 1:2.2 to 1:2.5 and more particularly of 1:2.25 to 1:2.4.
- appropriately chosen conditions of chlorination provide an oligochlorogermane mixture in which the Ge 2 Cl 6 content after step B) is particularly high.
- the Ge 2 Cl 6 content can then be at least 70 wt %, more particularly more than 85 wt % and preferably more than 95 wt %.
- HCl is used as chlorinating agent, it is more particularly also possible for a significant Ge 2 Cl 5 H content to also be present.
- the mixtures of chlorinated oligogermanes have an average number of germanium atoms per molecule in the range from 3 to 8.
- the chlorinated oligogermane has a hydrogen content of less than 2 atom % and more particularly less than 1 atom %. Frequently, the chlorinated oligogermane (mixture) will at most have a hydrogen content corresponding to the customary degrees of purity.
- the hydrogen substituents in the chlorinated oligogermane may more particularly come from the oxidation with HCl or be already present in the starting material since the chlorinated polygermanes can also have hydrogen substituents due to their method of production.
- the general rule applicable to all compounds mentioned herein is that they have customary degrees of purity. That is, the purity of a compound consisting of particular varieties of atoms, or of a mixture which consists of two or more such individual compounds (which may also include GeCl 4 ), is at least 99.5% and frequently is at least 99.95%, and that the proportion of impurities is more particularly less than 10 ppm (% by weight is always meant). In the individual case, chlorine atoms may be partly replaced by bromine substituents. These then do not count as impurity in the above sense.
- the chlorinated oligogermane when considered as individual compound includes more than 2 atom % and more particularly more than 2.8 atom % (in Ge 11 Cl 23 H for example) and even more particularly more than 6 atom % of hydrogen (in Ge 5 Cl 11 H for example).
- Even Si 2 Cl 5 H is capable of being produced by reaction with HCl and of being obtained as pure substance by distillation.
- the hydrogen contents recited herein can be determined as described above, via 1 H NMR spectroscopy.
- the signals observed therein are in the chemical shift range between 7.2 and 3.5 ppm and more particularly in the range between 5 and 3.8 ppm, and in the case of mixtures can be signals having very large full width at half maximum values.
- the chlorinated oligogermanes, and the mixtures thereof have significant bands in the Raman spectrum at below 600 wavenumbers, more particularly between 500 and 370 and even more particularly at ⁇ 320 wavenumbers.
- a significant band here and hereinbelow is generally any band whose intensity is greater than 10% of the highest intensity band in the Raman spectrum.
- the mixture of chlorinated oligogermanes may be more particularly colorless to slightly yellow or ivory white.
- the mixture is more particularly obtained as a mobile liquid or at least partly crystalline substance.
- the viscosity of the liquid proportion at room temperature is less than 1000 mPa s and more preferably less than 400 mPa s. Crystallinity can be determined using X-ray powder diffractometry, since crystalline compounds generate significant signals which naturally cannot occur in the case of liquid or viscid compounds.
- the chlorinated oligogermane is readily soluble in the inert solvent as defined above. Readily soluble here is to be understood as meaning that concentrations of at least 10 wt % can be put into solution.
- our chlorinated oligogermanes and our chlorinated oligogermane mixtures have the solubility properties of this example in at least one of the solvents benzene, toluene and cyclohexane, frequently even in all three solvents.
- “Readily” soluble further refers to chlorinated oligogermane mixtures where a nonsoluble residue of not more than 5 wt % of the amount used remains (this means in the case of a solution with 10 wt % of dissolved chlorinated oligosilane that at most 0.5 wt % can remain as nondissolved solid material). Frequently, however, complete dissolution of the chlorinated oligogermane mixture will take place.
- At least 20 wt % of the above soluble fraction is distillable under reduced pressure, especially under a pressure in the range from 0.01 to 1 hPa, without decomposing. This stipulation is satisfied more particularly by compounds having up to 4 germanium atoms.
- HCl is more particularly useful as chlorine-containing gas
- chlorine is more particularly in the form of Cl 2
- nonmetal chlorides are more particularly useful as chlorine-releasing compounds. Particular preference is given to using either Cl 2 or HCl as a chlorinating agent.
- Method step B) is generally subject to the following temperature conditions and/or pressure conditions, although in most cases not only the following pressure conditions, but also the following temperature conditions apply. It is accordingly more particularly the case that the temperature in method step B) is ⁇ 60° C. to 200° C. and especially ⁇ 30 to 40° C., for example, ⁇ 10 to 25° C.
- the pressure is more particularly 200 to 2000 hPa, for example, 800 to 1500 hPa.
- the chlorination as per method step B) is followed by a fractional distillation to separate comparatively volatile chlorinated germanes from germanes having at least 4 germanium atoms in the molecule. It is thus more particularly the case that GeCl 4 , Ge 2 Cl 6 and Ge 3 Cl 8 are separated off in the fractional distillation.
- This fractional distillation can take place for example at a pressure of 10 ⁇ 1 to 10 ⁇ 2 hPa and a temperature of up to 140° C., preferably up to 100° C., and will frequently be carried out at room temperature.
- the chlorinated polygermanes provided in step A) are diluted before step B) and more particularly GeCl 4 , Ge 2 Cl 6 and/or Ge 3 Cl 8 can be used as diluent (hereinafter also referred to as solvent).
- diluent hereinafter also referred to as solvent
- Such a dilution can provide a more efficient chlorination in step B).
- the diluents can subsequently also be distilled off again and optionally the distilled-off diluents can be reused afresh (i.e., recycled) as diluents.
- the method can be carried out such that an excess of the chlorinating agent, more particularly an excess of HCl, is present during step B).
- an excess can be present when free HCl is constantly present in the reaction mixture, for example, such that the solution is saturated with HCl.
- further chlorinating agent can be constantly replenished in step B). In general, however, no saturated HCl solutions are used.
- chlorinating agent When other chlorinating agents are used (but optionally also in the case of HCl) there will frequently be a molar deficiency of chlorinating agent and then further chlorinating agent will be replenished as appropriate (so that it is permanently in molar deficiency). Especially when Cl 2 is used as chlorinating agent, Cl 2 will frequently be used in that manner in molar deficiency relative to the chloropolygermane.
- the reaction with the chloropolygermane may advantageously be controlled via the rate of chlorine addition to thereby try to suppress the formation of GeCl 4 .
- the chlorination can be carried out by selecting a particularly long reaction time with Cl 2 which, as shown above, is always in molar deficiency. Should a significant proportion of Ge 2 Cl 5 H be formed, HCl must be used as a chlorinating agent instead of Cl 2 (or some other chlorinating agent that does not contain hydrogen). When a particularly low proportion of Ge 2 Cl 6 is desired, the reaction should be carried out at low temperatures and the Cl 2 should be added particularly carefully.
- the total molar quantity of chlorine added should be adjusted appropriately, for example, by choosing the added amount of chlorine in relation to the known chlorine:germanium ratio for the chloropolygermane used such that a certain chlorine:germanium ratio must automatically result for the chlorooligogermane mixture obtained.
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009056731A DE102009056731A1 (de) | 2009-12-04 | 2009-12-04 | Halogenierte Polysilane und Polygermane |
| DE102009056731.3 | 2009-12-04 | ||
| PCT/EP2010/068986 WO2011067413A2 (de) | 2009-12-04 | 2010-12-06 | Chlorierte oligogermane und verfahren zu deren herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20130043429A1 true US20130043429A1 (en) | 2013-02-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| US13/513,217 Abandoned US20120315392A1 (en) | 2009-12-04 | 2010-12-06 | Method for producing hydrogenated polygermasilane and hydrogenated polygermasilane |
| US13/513,018 Expired - Fee Related US9040009B2 (en) | 2009-12-04 | 2010-12-06 | Kinetically stable chlorinated polysilanes and production thereof |
| US13/513,384 Abandoned US20120321540A1 (en) | 2009-12-04 | 2010-12-06 | Method for producing oligosilanes |
| US13/512,999 Expired - Fee Related US9139702B2 (en) | 2009-12-04 | 2010-12-06 | Method for producing halogenated polysilanes |
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| US13/513,611 Expired - Fee Related US9458294B2 (en) | 2009-12-04 | 2010-12-06 | Method for removing impurities from silicon |
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| US13/513,018 Expired - Fee Related US9040009B2 (en) | 2009-12-04 | 2010-12-06 | Kinetically stable chlorinated polysilanes and production thereof |
| US13/513,384 Abandoned US20120321540A1 (en) | 2009-12-04 | 2010-12-06 | Method for producing oligosilanes |
| US13/512,999 Expired - Fee Related US9139702B2 (en) | 2009-12-04 | 2010-12-06 | Method for producing halogenated polysilanes |
| US13/513,036 Abandoned US20130004666A1 (en) | 2009-12-04 | 2010-12-06 | Method for producing hydrogenated polygermane and hydrogenated polygermane |
| US13/513,611 Expired - Fee Related US9458294B2 (en) | 2009-12-04 | 2010-12-06 | Method for removing impurities from silicon |
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Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
| JP5856609B2 (ja) | 2010-05-28 | 2016-02-10 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | リチウム硫黄電流生成セルの正極に使用される固体複合材料及びその製造方法並びにリチウム硫黄電流生成セル |
| KR101250172B1 (ko) * | 2012-08-20 | 2013-04-05 | 오씨아이머티리얼즈 주식회사 | 고수율로 모노 게르만 가스를 제조하는 방법 |
| DE102012224202A1 (de) * | 2012-12-21 | 2014-07-10 | Evonik Industries Ag | Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen |
| DE102013207447A1 (de) * | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan |
| DE102013207444A1 (de) | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen |
| US9174853B2 (en) | 2013-12-06 | 2015-11-03 | Gelest Technologies, Inc. | Method for producing high purity germane by a continuous or semi-continuous process |
| DE102014007766B4 (de) | 2014-05-21 | 2025-10-16 | Christian Bauch | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| DE102014007685B4 (de) | 2014-05-21 | 2022-04-07 | Sven Holl | Verfahren zur Herstellung von Hexachlordisilan |
| DE102014007768B4 (de) | 2014-05-21 | 2025-07-03 | Sven Holl | Verfahren zur Herstellung von Mischungen chlorierter Silane mit erhöhten Anteilen von Si4Cl10 und/oder Si5Cl12 |
| DE102015009129B4 (de) * | 2014-07-22 | 2016-12-15 | Norbert Auner | Verfahren zur Spaltung von Silicium-Silicium-Bindungen und/oder von Silicium-Chlor-Bindungen in Mono-, Poly- und/oder Oligosilanen |
| DE102014013250B4 (de) * | 2014-09-08 | 2021-11-25 | Christian Bauch | Verfahren zur Aufreinigung halogenierter Oligosilane |
| WO2016095953A1 (de) * | 2014-12-15 | 2016-06-23 | Spawnt Private S.À.R.L. | Verfahren zur herstellung von chlorierten oligosilanen |
| DE102016014900A1 (de) * | 2016-12-15 | 2018-06-21 | Psc Polysilane Chemicals Gmbh | Verfahren zur Erhöhung der Reinheit von Oligosilanen und Oligosilanverbindungen |
| DE102016225872A1 (de) * | 2016-12-21 | 2018-06-21 | Evonik Degussa Gmbh | Verfahren zur Trennung von Gemischen höherer Silane |
| US11771703B2 (en) | 2017-03-17 | 2023-10-03 | The Johns Hopkins University | Targeted epigenetic therapy against distal regulatory element of TGFβ2 expression |
| AU2019264447B2 (en) | 2018-05-02 | 2024-09-26 | Hysilabs, Sas | Hydrogen carrier compounds |
| JP7125062B2 (ja) * | 2019-01-25 | 2022-08-24 | 株式会社東芝 | 判定方法及び処理方法 |
| CN117247018B (zh) * | 2023-09-22 | 2025-10-31 | 新疆大全新能源股份有限公司 | 一种回收新鲜料系统重杂的方法和装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7491782B1 (en) * | 2004-10-08 | 2009-02-17 | Kovio, Inc. | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US20090169457A1 (en) * | 2006-07-20 | 2009-07-02 | Gudrun Annette Auner | Polysilane processing and use |
Family Cites Families (107)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE108077C (https=) | ||||
| DE1049835B (de) | 1959-02-05 | Kali-Chemie Aktiengesellschaft, Hannover | Verfahren zur Herstellung von Siliciumhydriden | |
| DE340912C (de) | 1916-04-15 | 1921-09-21 | Frank Robert Mc Berty | Einrichtung fuer Fernsprechanlagen |
| GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
| GB793718A (en) | 1955-08-16 | 1958-04-23 | Standard Telephones Cables Ltd | Improvements in or relating to methods of producing silicon of high purity |
| GB832333A (en) | 1956-09-28 | 1960-04-06 | Standard Telephones Cables Ltd | Improvements in methods of producing silane of high purity |
| DE1034159B (de) | 1956-11-03 | 1958-07-17 | Kali Chemie Ag | Verfahren zur Herstellung von Siliciumhydriden |
| DE1061302B (de) | 1956-12-12 | 1959-07-16 | Kali Chemie Ag | Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. und V. Gruppe des Periodischen Systems |
| DE1055511B (de) | 1956-12-15 | 1959-04-23 | Kali Chemie Ag | Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. Hauptgruppe des Periodischen Systems mit den Ordnungszahlen 14 bis 50 |
| GB823496A (en) | 1957-12-27 | 1959-11-11 | Metal Hydrides Inc | Improvements in method of preparing high purity silicon |
| GB851962A (en) | 1958-06-09 | 1960-10-19 | Allied Chem | Production of pure silane |
| DE1098931B (de) | 1958-07-03 | 1961-02-09 | Wacker Chemie Gmbh | Verfahren zur Reinigung von geschmolzenem Silicium |
| US3050366A (en) | 1959-07-15 | 1962-08-21 | Du Pont | Production of silane by the use of a zinc catalyst |
| DE1096341B (de) | 1959-10-15 | 1961-01-05 | Kali Chemie Ag | Verfahren zur Herstellung von Monosilan |
| DE1187614B (de) | 1963-07-02 | 1965-02-25 | Bayer Ag | Verfahren zur Herstellung von vorzugsweise organisch substituierten Wasserstoffverbindungen der Elemente Bor und Silicium |
| FR1429930A (fr) | 1964-04-17 | 1966-02-25 | Thomson Houston Comp Francaise | Perfectionnements aux méthodes de préparation des hydrures |
| DE1568255A1 (de) | 1965-03-03 | 1970-03-19 | Ceskoslovenska Akademie Ved | Verfahren zur Reduktion von Halosiliciumverbindungen |
| US3401183A (en) | 1965-12-23 | 1968-09-10 | Gen Electric | Method for preparing organo germanium, tin and silicon hydrides |
| US3704261A (en) | 1971-10-18 | 1972-11-28 | Gen Electric | Preparation of silicon hydrides |
| BE794871A (fr) | 1972-02-02 | 1973-08-01 | Rhone Poulenc Sa | Nouvelles sulfones isopreniques |
| US3926833A (en) | 1973-03-21 | 1975-12-16 | Lithium Corp | Preparation of mixed chlorohydrides of aluminum |
| FR2430917A1 (fr) | 1978-07-11 | 1980-02-08 | Comp Generale Electricite | Procede et dispositif d'elaboration de silicium polycristallin |
| US4200621A (en) | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
| US4295986A (en) | 1979-05-14 | 1981-10-20 | Gordon Roy G | Low temperature catalytic reduction |
| US4309259A (en) | 1980-05-09 | 1982-01-05 | Motorola, Inc. | High pressure plasma hydrogenation of silicon tetrachloride |
| US4312849A (en) | 1980-09-09 | 1982-01-26 | Aluminum Company Of America | Phosphorous removal in silicon purification |
| DE3034957C2 (de) | 1980-09-17 | 1983-01-13 | Degussa Ag, 6000 Frankfurt | Verfahren und Vorrichtung zum Innenbeschichten von Kontaktrohren |
| US4374111A (en) | 1980-11-21 | 1983-02-15 | Allied Corporation | Production of silane |
| DE3173646D1 (en) | 1980-12-24 | 1986-03-13 | Dynamit Nobel Ag | Method of purifying chlorosilanes |
| US4374110A (en) | 1981-06-15 | 1983-02-15 | Motorola, Inc. | Purification of silicon source materials |
| JPS58156522A (ja) | 1982-03-11 | 1983-09-17 | Mitsui Toatsu Chem Inc | ジシランの製造方法 |
| US4755370A (en) | 1982-03-18 | 1988-07-05 | General Electric Company | Purification of silicon halides |
| JPS59500416A (ja) * | 1982-03-18 | 1984-03-15 | ゼネラル・エレクトリック・カンパニイ | ハロゲン化けい素の精製法 |
| US4407783A (en) | 1982-08-16 | 1983-10-04 | Allied Corporation | Producing silane from silicon tetrafluoride |
| FR2532293A1 (fr) | 1982-08-31 | 1984-03-02 | Rhone Poulenc Spec Chim | Procede continu de preparation de silane |
| US4529707A (en) | 1982-09-21 | 1985-07-16 | General Electric Company | Detection of boron impurities in chlorosilanes |
| FR2533906A1 (fr) | 1982-09-30 | 1984-04-06 | Rhone Poulenc Spec Chim | Procede et dispositif pour la preparation de silane pur par reaction de chlorosilanes avec l'hydrure de lithium |
| WO1984002332A1 (en) | 1982-12-13 | 1984-06-21 | Ethyl Corp | Process for production of silane |
| US4632816A (en) * | 1982-12-13 | 1986-12-30 | Ethyl Corporation | Process for production of silane |
| DE3247362A1 (de) | 1982-12-22 | 1984-06-28 | Studiengesellschaft Kohle mbH, 4330 Mülheim | Verfahren zur herstellung von silicium-wasserstoff-verbindungen, insbesondere des silans |
| DE3342496A1 (de) | 1983-11-24 | 1985-06-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum reinigen von mg-silicium |
| JPS60176915A (ja) | 1984-02-21 | 1985-09-11 | Central Glass Co Ltd | ジシランの製造法 |
| JPS60221301A (ja) * | 1984-04-13 | 1985-11-06 | Mitsui Toatsu Chem Inc | 水素化ゲルマニウムの製造方法 |
| FR2576902B1 (fr) | 1985-02-04 | 1987-02-13 | Rhone Poulenc Spec Chim | Procede de fabrication d'hydrogeno-silanes |
| JPS61191022A (ja) * | 1985-02-20 | 1986-08-25 | Canon Inc | 堆積膜形成法 |
| US4778692A (en) * | 1985-02-20 | 1988-10-18 | Canon Kabushiki Kaisha | Process for forming deposited film |
| JPS61191512A (ja) | 1985-02-20 | 1986-08-26 | Toagosei Chem Ind Co Ltd | ジシランの製造方法 |
| JPH0688773B2 (ja) | 1985-03-08 | 1994-11-09 | 三井東圧化学株式会社 | ヘキサクロロジシランの製造方法 |
| US4725419A (en) | 1985-05-17 | 1988-02-16 | Ethyl Corporation | Silane production from magnesium hydride |
| EP0316472A1 (en) | 1987-11-17 | 1989-05-24 | Ethyl Corporation | Silane production from magnesium hydride |
| JPS6217004A (ja) * | 1985-07-12 | 1987-01-26 | Mitsui Toatsu Chem Inc | ゲルマン類の製造方法 |
| US4824657A (en) | 1985-11-27 | 1989-04-25 | E. I. Du Pont De Nemours And Company | Process for reducing silicon, germanium and tin halides |
| US4777023A (en) | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
| US4792460A (en) * | 1986-07-15 | 1988-12-20 | Electric Power Research Institute, Inc. | Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium |
| DE3635064A1 (de) | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
| US4762808A (en) | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
| US4847061A (en) | 1987-07-20 | 1989-07-11 | Ethyl Corporation | Process for preparation of silane |
| JP2536027B2 (ja) | 1988-03-16 | 1996-09-18 | 東亞合成株式会社 | ジシランの製造方法 |
| US4855120A (en) | 1988-10-24 | 1989-08-08 | Ethyl Corporation | Production of silane and useful coproducts |
| DE3926595A1 (de) | 1989-08-11 | 1991-02-14 | Degussa | Verfahren zur hydrierung halogensubstituierter verbindungen |
| JPH03205055A (ja) | 1990-01-04 | 1991-09-06 | Hara Herusu Kogyo Kk | 浴槽の気泡発生装置 |
| US5061470A (en) | 1990-08-03 | 1991-10-29 | Ethyl Corporation | Silane production from hydridomagnesium chloride |
| JPH04130010A (ja) | 1990-09-20 | 1992-05-01 | Toagosei Chem Ind Co Ltd | ジシランの製造方法 |
| JP2965094B2 (ja) * | 1991-06-28 | 1999-10-18 | キヤノン株式会社 | 堆積膜形成方法 |
| DE4239246C1 (de) * | 1992-11-21 | 1993-12-16 | Goldschmidt Ag Th | Verfahren zur Herstellung von SiH-Gruppen aufweisenden Organopolysiloxanen |
| DE4306106A1 (de) | 1993-02-27 | 1994-09-01 | Thomas Dipl Chem Lobreyer | Verfahren zur Herstellung von Silylgermanen |
| DE4313130C1 (de) | 1993-04-22 | 1994-05-26 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
| JPH08231949A (ja) * | 1995-02-22 | 1996-09-10 | Osaka Gas Co Ltd | 有機電界発光素子 |
| JPH09237927A (ja) * | 1995-12-26 | 1997-09-09 | Toshiba Corp | 半導体薄膜形成方法および太陽電池の製造方法 |
| US5866471A (en) * | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
| DE19812587C1 (de) | 1998-03-23 | 1999-09-23 | Wolfgang Sundermeyer | Verfahren zur Hydrierung halogensubstituierter Siliziumverbindungen |
| JP2002246384A (ja) | 2001-02-21 | 2002-08-30 | Jsr Corp | シリコン酸化膜の形成方法および形成用組成物 |
| FR2827592B1 (fr) | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
| KR100434698B1 (ko) * | 2001-09-05 | 2004-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 선택적 에피성장법 |
| TWI231750B (en) | 2002-07-17 | 2005-05-01 | Delta Tooling Co Ltd | Seat structure |
| US7238596B2 (en) | 2003-06-13 | 2007-07-03 | Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University | Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs |
| US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
| DE10337309A1 (de) | 2003-08-14 | 2005-03-10 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
| US7498015B1 (en) * | 2004-02-27 | 2009-03-03 | Kovio, Inc. | Method of making silane compositions |
| US7314513B1 (en) * | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
| WO2006109427A1 (ja) | 2005-04-07 | 2006-10-19 | Toagosei Co., Ltd. | 六塩化二ケイ素の精製方法及び高純度六塩化二ケイ素 |
| DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
| EP1943669A4 (en) | 2005-10-05 | 2012-06-13 | Kovio Inc | LINEAR AND NETWORKED HIGHLY MOLECULAR POLYSILANES, POLYGERMANES AND COPOLYMERS THEREOF, COMPOSITIONS CONTAINING THEM AND METHOD FOR THE PREPARATION AND USE OF SUCH COMPOUNDS AND COMPOSITIONS |
| WO2007062096A2 (en) | 2005-11-23 | 2007-05-31 | The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University | Silicon-germanium hydrides and methods for making and using same |
| JP5265376B2 (ja) | 2005-11-23 | 2013-08-14 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ | 新規な水素化シリコンゲルマニウム、その製造法および使用法 |
| NO326254B1 (no) * | 2005-12-22 | 2008-10-27 | Sinvent As | Fremgangsmate for fremstilling av silan |
| JP2007254593A (ja) * | 2006-03-23 | 2007-10-04 | Jsr Corp | ゲルマニウムポリマー、その製造法およびゲルマニウム膜の形成方法 |
| KR101269201B1 (ko) * | 2006-06-30 | 2013-05-28 | 삼성전자주식회사 | 폐 루프 방식의 다중 안테나 시스템에서 데이터송/수신장치 및 방법 |
| EP2072464A4 (en) | 2006-09-29 | 2010-09-01 | Shinetsu Chemical Co | PROCESS FOR CLEANING SILICON, SILICON AND SOLAR CELL |
| WO2008045327A2 (en) * | 2006-10-06 | 2008-04-17 | Kovio, Inc. | Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers |
| EP2076558B8 (en) | 2006-10-24 | 2018-08-01 | Dow Silicones Corporation | Composition comprising neopentasilane and method of preparing same |
| DE102007007874A1 (de) | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
| DE102007013219A1 (de) | 2007-03-15 | 2008-09-18 | Rev Renewable Energy Ventures, Inc. | Plasmagestützte Synthese |
| ES2366597T3 (es) * | 2007-03-30 | 2011-10-21 | Spawnt Private S.À.R.L. | Hiudrogenación catalítica. |
| US8530589B2 (en) * | 2007-05-04 | 2013-09-10 | Kovio, Inc. | Print processing for patterned conductor, semiconductor and dielectric materials |
| JP4714198B2 (ja) | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | クロロシラン類の精製方法 |
| DE102007000841A1 (de) | 2007-10-09 | 2009-04-16 | Wacker Chemie Ag | Verfahren zur Herstellung von hochreinem Hexachlordisilan |
| DE102008025260B4 (de) | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung |
| DE102008025261B4 (de) | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung |
| US20110305619A1 (en) | 2008-05-27 | 2011-12-15 | Spawnt Private S.A.R.L | Silicon Containing Halogenide, Method for Producing the Same, and Use of the Same |
| DE102008025263B4 (de) | 2008-05-27 | 2015-08-06 | Spawnt Private S.À.R.L. | Verfahren zum Aufreinigen von metallurgischem Silicium |
| DE102008036143A1 (de) | 2008-08-01 | 2010-02-04 | Berlinsolar Gmbh | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
| US9428618B2 (en) | 2008-09-17 | 2016-08-30 | Spawnt Private S.A.R.L. | Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group |
| JP5206334B2 (ja) | 2008-11-07 | 2013-06-12 | 東亞合成株式会社 | クロロポリシランの製造方法 |
| DE102008054537A1 (de) * | 2008-12-11 | 2010-06-17 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration |
| DE102009056437B4 (de) | 2009-12-02 | 2013-06-27 | Spawnt Private S.À.R.L. | Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen |
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
-
2009
- 2009-12-04 DE DE102009056731A patent/DE102009056731A1/de not_active Withdrawn
-
2010
- 2010-12-06 WO PCT/EP2010/068974 patent/WO2011067410A1/de not_active Ceased
- 2010-12-06 JP JP2012541537A patent/JP5731531B2/ja not_active Expired - Fee Related
- 2010-12-06 WO PCT/EP2010/068994 patent/WO2011067417A1/de not_active Ceased
- 2010-12-06 JP JP2012541539A patent/JP2013512845A/ja active Pending
- 2010-12-06 US US13/512,760 patent/US20130043429A1/en not_active Abandoned
- 2010-12-06 WO PCT/EP2010/068986 patent/WO2011067413A2/de not_active Ceased
- 2010-12-06 TW TW099142324A patent/TW201134764A/zh unknown
- 2010-12-06 WO PCT/EP2010/068991 patent/WO2011067415A1/de not_active Ceased
- 2010-12-06 EP EP10787448A patent/EP2507169A1/de not_active Withdrawn
- 2010-12-06 EP EP10787124.6A patent/EP2507296B1/de not_active Revoked
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7491782B1 (en) * | 2004-10-08 | 2009-02-17 | Kovio, Inc. | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US20090169457A1 (en) * | 2006-07-20 | 2009-07-02 | Gudrun Annette Auner | Polysilane processing and use |
Non-Patent Citations (2)
| Title |
|---|
| Chandrasekhar, "Inorganic and Organometallic Polymers", 2005. * |
| Drake et al., "Vibrational Spectra of Germane and Silane Derivatives, Part I, The Fundamental Vibration Frequencies of Dichlorogermane", J. Chem. Soc. (A), 1969. * |
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