WO2011067410A1 - Verfahren zum entfernen von verunreinigungen aus silicium - Google Patents

Verfahren zum entfernen von verunreinigungen aus silicium Download PDF

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Publication number
WO2011067410A1
WO2011067410A1 PCT/EP2010/068974 EP2010068974W WO2011067410A1 WO 2011067410 A1 WO2011067410 A1 WO 2011067410A1 EP 2010068974 W EP2010068974 W EP 2010068974W WO 2011067410 A1 WO2011067410 A1 WO 2011067410A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
halogen
impurities
halopolysilane
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/068974
Other languages
German (de)
English (en)
French (fr)
Inventor
Norbert Auner
Christian Bauch
Sven Holl
Rumen Deltschew
Seyed-Javad Mohsseni-Ala
Gerd Lippold
Thoralf Gebel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spawnt Private SARL
Original Assignee
Spawnt Private SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43499339&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2011067410(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Spawnt Private SARL filed Critical Spawnt Private SARL
Priority to EP10787448A priority Critical patent/EP2507169A1/de
Priority to US13/513,611 priority patent/US9458294B2/en
Publication of WO2011067410A1 publication Critical patent/WO2011067410A1/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
    • C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

Definitions

  • a reaction between the impurity and the halopolysilane or its decomposition product is to be understood as meaning, in particular, that the impurities present in elemental form form a halide with the halogen of the polysilane or of the decomposition product, which is usually volatile and can therefore escape ,
  • the formation of a slag is frequently observed, in which then the halogen-containing impurities are present. This slag can then be removed from the surface of the molten silicon.
  • outgassing of the elemental halides formed can be observed.
  • the halogen: silicon ratio of the halopolysilane used or the average halogen: silicon ratio of the mixture of halopolysilane is greater than 1: 1 and less than 2.5: 1. In particular, it is 1.5: 1 to 2.3: 1, for example 1.6: 1 to 2.25: 1.
  • the perhalogenated isomers of Pentasilans may be mentioned in particular, since this can no longer be distilled without decomposition and DEM according to a simple evaporation of the connection, for example, already adsorbed on the surface of a to-clean ⁇ constricting silicon particle can no longer be possible.
  • a mixing of the halopolysilane with the to be cleaned silicon can be effected in that the encapsulation of silicon melts itself, whereby only in this state, a distribution of the halopolysilane or the decomposition products meanwhile formed in the Silicon melt takes place, so that outgassing of decomposition products during the heating process does not occur in this case.
  • encapsulation in particular an encapsulation made of quartz glass, for example an ampoule
  • bursting in Silici ⁇ remelting because of the increased temperature of the Sili ⁇ ciumschmelze occurs a decomposition reaction of the Chlorpolysilans in ⁇ nerrenz the quartz glass ampoule and thus a positive pressure is produced, which the quartz glass ultimately can no longer withstand.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Silicon Polymers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
PCT/EP2010/068974 2009-12-04 2010-12-06 Verfahren zum entfernen von verunreinigungen aus silicium Ceased WO2011067410A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10787448A EP2507169A1 (de) 2009-12-04 2010-12-06 Verfahren zum entfernen von verunreinigungen aus silicium
US13/513,611 US9458294B2 (en) 2009-12-04 2010-12-06 Method for removing impurities from silicon

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009056731A DE102009056731A1 (de) 2009-12-04 2009-12-04 Halogenierte Polysilane und Polygermane
DE102009056731.3 2009-12-04

Publications (1)

Publication Number Publication Date
WO2011067410A1 true WO2011067410A1 (de) 2011-06-09

Family

ID=43499339

Family Applications (7)

Application Number Title Priority Date Filing Date
PCT/EP2010/068974 Ceased WO2011067410A1 (de) 2009-12-04 2010-12-06 Verfahren zum entfernen von verunreinigungen aus silicium
PCT/EP2010/068994 Ceased WO2011067417A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von hydriertem polygermasilan und hydriertes polygermasilan
PCT/EP2010/068986 Ceased WO2011067413A2 (de) 2009-12-04 2010-12-06 Chlorierte oligogermane und verfahren zu deren herstellung
PCT/EP2010/068991 Ceased WO2011067415A1 (de) 2009-12-04 2010-12-06 Kinetisch stabile chlorierte polysilane und deren herstellung und verwendung
PCT/EP2010/068993 Ceased WO2011067416A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von halogenierten polysilanen
PCT/EP2010/068995 Ceased WO2011067418A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von oligosilanen
PCT/EP2010/068979 Ceased WO2011067411A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von hydriertem polygerman und hydriertes polygerman

Family Applications After (6)

Application Number Title Priority Date Filing Date
PCT/EP2010/068994 Ceased WO2011067417A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von hydriertem polygermasilan und hydriertes polygermasilan
PCT/EP2010/068986 Ceased WO2011067413A2 (de) 2009-12-04 2010-12-06 Chlorierte oligogermane und verfahren zu deren herstellung
PCT/EP2010/068991 Ceased WO2011067415A1 (de) 2009-12-04 2010-12-06 Kinetisch stabile chlorierte polysilane und deren herstellung und verwendung
PCT/EP2010/068993 Ceased WO2011067416A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von halogenierten polysilanen
PCT/EP2010/068995 Ceased WO2011067418A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von oligosilanen
PCT/EP2010/068979 Ceased WO2011067411A1 (de) 2009-12-04 2010-12-06 Verfahren zur herstellung von hydriertem polygerman und hydriertes polygerman

Country Status (9)

Country Link
US (7) US20130043429A1 (https=)
EP (7) EP2507169A1 (https=)
JP (6) JP5731531B2 (https=)
CN (3) CN102666381B (https=)
BR (2) BR112012014106A2 (https=)
CA (2) CA2782226A1 (https=)
DE (1) DE102009056731A1 (https=)
TW (7) TW201134764A (https=)
WO (7) WO2011067410A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016500361A (ja) * 2012-12-21 2016-01-12 エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ ハロゲン含有の高級シラン化合物の水素化方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
JP5856609B2 (ja) 2010-05-28 2016-02-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ リチウム硫黄電流生成セルの正極に使用される固体複合材料及びその製造方法並びにリチウム硫黄電流生成セル
KR101250172B1 (ko) * 2012-08-20 2013-04-05 오씨아이머티리얼즈 주식회사 고수율로 모노 게르만 가스를 제조하는 방법
DE102013207447A1 (de) * 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan
DE102013207444A1 (de) 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen
US9174853B2 (en) 2013-12-06 2015-11-03 Gelest Technologies, Inc. Method for producing high purity germane by a continuous or semi-continuous process
DE102014007766B4 (de) 2014-05-21 2025-10-16 Christian Bauch Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
DE102014007685B4 (de) 2014-05-21 2022-04-07 Sven Holl Verfahren zur Herstellung von Hexachlordisilan
DE102014007768B4 (de) 2014-05-21 2025-07-03 Sven Holl Verfahren zur Herstellung von Mischungen chlorierter Silane mit erhöhten Anteilen von Si4Cl10 und/oder Si5Cl12
DE102015009129B4 (de) * 2014-07-22 2016-12-15 Norbert Auner Verfahren zur Spaltung von Silicium-Silicium-Bindungen und/oder von Silicium-Chlor-Bindungen in Mono-, Poly- und/oder Oligosilanen
DE102014013250B4 (de) * 2014-09-08 2021-11-25 Christian Bauch Verfahren zur Aufreinigung halogenierter Oligosilane
WO2016095953A1 (de) * 2014-12-15 2016-06-23 Spawnt Private S.À.R.L. Verfahren zur herstellung von chlorierten oligosilanen
DE102016014900A1 (de) * 2016-12-15 2018-06-21 Psc Polysilane Chemicals Gmbh Verfahren zur Erhöhung der Reinheit von Oligosilanen und Oligosilanverbindungen
DE102016225872A1 (de) * 2016-12-21 2018-06-21 Evonik Degussa Gmbh Verfahren zur Trennung von Gemischen höherer Silane
US11771703B2 (en) 2017-03-17 2023-10-03 The Johns Hopkins University Targeted epigenetic therapy against distal regulatory element of TGFβ2 expression
AU2019264447B2 (en) 2018-05-02 2024-09-26 Hysilabs, Sas Hydrogen carrier compounds
JP7125062B2 (ja) * 2019-01-25 2022-08-24 株式会社東芝 判定方法及び処理方法
CN117247018B (zh) * 2023-09-22 2025-10-31 新疆大全新能源股份有限公司 一种回收新鲜料系统重杂的方法和装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
WO2006125425A1 (de) 2005-05-25 2006-11-30 Rev Renewable Energy Ventures Ag Verfahren zur herstellung von silicium aus halogensilanen
WO2008009473A1 (de) * 2006-07-20 2008-01-24 Rev Renewable Energy Ventures Ag Polysilanverarbeitung und verwendung
WO2009143823A2 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Halogeniertes polysilan und plasmachemisches verfahren zu dessen herstellung
WO2009143825A2 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Halogenidhaltiges silicium, verfahren zur herstellung desselben und verwendung desselben
WO2009143824A1 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Halogeniertes polysilan und thermisches verfahren zu dessen herstellung

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE108077C (https=)
DE1049835B (de) 1959-02-05 Kali-Chemie Aktiengesellschaft, Hannover Verfahren zur Herstellung von Siliciumhydriden
DE340912C (de) 1916-04-15 1921-09-21 Frank Robert Mc Berty Einrichtung fuer Fernsprechanlagen
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
GB793718A (en) 1955-08-16 1958-04-23 Standard Telephones Cables Ltd Improvements in or relating to methods of producing silicon of high purity
GB832333A (en) 1956-09-28 1960-04-06 Standard Telephones Cables Ltd Improvements in methods of producing silane of high purity
DE1034159B (de) 1956-11-03 1958-07-17 Kali Chemie Ag Verfahren zur Herstellung von Siliciumhydriden
DE1061302B (de) 1956-12-12 1959-07-16 Kali Chemie Ag Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. und V. Gruppe des Periodischen Systems
DE1055511B (de) 1956-12-15 1959-04-23 Kali Chemie Ag Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. Hauptgruppe des Periodischen Systems mit den Ordnungszahlen 14 bis 50
GB823496A (en) 1957-12-27 1959-11-11 Metal Hydrides Inc Improvements in method of preparing high purity silicon
GB851962A (en) 1958-06-09 1960-10-19 Allied Chem Production of pure silane
DE1098931B (de) 1958-07-03 1961-02-09 Wacker Chemie Gmbh Verfahren zur Reinigung von geschmolzenem Silicium
US3050366A (en) 1959-07-15 1962-08-21 Du Pont Production of silane by the use of a zinc catalyst
DE1096341B (de) 1959-10-15 1961-01-05 Kali Chemie Ag Verfahren zur Herstellung von Monosilan
DE1187614B (de) 1963-07-02 1965-02-25 Bayer Ag Verfahren zur Herstellung von vorzugsweise organisch substituierten Wasserstoffverbindungen der Elemente Bor und Silicium
FR1429930A (fr) 1964-04-17 1966-02-25 Thomson Houston Comp Francaise Perfectionnements aux méthodes de préparation des hydrures
DE1568255A1 (de) 1965-03-03 1970-03-19 Ceskoslovenska Akademie Ved Verfahren zur Reduktion von Halosiliciumverbindungen
US3401183A (en) 1965-12-23 1968-09-10 Gen Electric Method for preparing organo germanium, tin and silicon hydrides
US3704261A (en) 1971-10-18 1972-11-28 Gen Electric Preparation of silicon hydrides
BE794871A (fr) 1972-02-02 1973-08-01 Rhone Poulenc Sa Nouvelles sulfones isopreniques
US3926833A (en) 1973-03-21 1975-12-16 Lithium Corp Preparation of mixed chlorohydrides of aluminum
FR2430917A1 (fr) 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
US4200621A (en) 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4295986A (en) 1979-05-14 1981-10-20 Gordon Roy G Low temperature catalytic reduction
US4309259A (en) 1980-05-09 1982-01-05 Motorola, Inc. High pressure plasma hydrogenation of silicon tetrachloride
US4312849A (en) 1980-09-09 1982-01-26 Aluminum Company Of America Phosphorous removal in silicon purification
DE3034957C2 (de) 1980-09-17 1983-01-13 Degussa Ag, 6000 Frankfurt Verfahren und Vorrichtung zum Innenbeschichten von Kontaktrohren
US4374111A (en) 1980-11-21 1983-02-15 Allied Corporation Production of silane
DE3173646D1 (en) 1980-12-24 1986-03-13 Dynamit Nobel Ag Method of purifying chlorosilanes
US4374110A (en) 1981-06-15 1983-02-15 Motorola, Inc. Purification of silicon source materials
JPS58156522A (ja) 1982-03-11 1983-09-17 Mitsui Toatsu Chem Inc ジシランの製造方法
US4755370A (en) 1982-03-18 1988-07-05 General Electric Company Purification of silicon halides
JPS59500416A (ja) * 1982-03-18 1984-03-15 ゼネラル・エレクトリック・カンパニイ ハロゲン化けい素の精製法
US4407783A (en) 1982-08-16 1983-10-04 Allied Corporation Producing silane from silicon tetrafluoride
FR2532293A1 (fr) 1982-08-31 1984-03-02 Rhone Poulenc Spec Chim Procede continu de preparation de silane
US4529707A (en) 1982-09-21 1985-07-16 General Electric Company Detection of boron impurities in chlorosilanes
FR2533906A1 (fr) 1982-09-30 1984-04-06 Rhone Poulenc Spec Chim Procede et dispositif pour la preparation de silane pur par reaction de chlorosilanes avec l'hydrure de lithium
WO1984002332A1 (en) 1982-12-13 1984-06-21 Ethyl Corp Process for production of silane
US4632816A (en) * 1982-12-13 1986-12-30 Ethyl Corporation Process for production of silane
DE3247362A1 (de) 1982-12-22 1984-06-28 Studiengesellschaft Kohle mbH, 4330 Mülheim Verfahren zur herstellung von silicium-wasserstoff-verbindungen, insbesondere des silans
DE3342496A1 (de) 1983-11-24 1985-06-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum reinigen von mg-silicium
JPS60176915A (ja) 1984-02-21 1985-09-11 Central Glass Co Ltd ジシランの製造法
JPS60221301A (ja) * 1984-04-13 1985-11-06 Mitsui Toatsu Chem Inc 水素化ゲルマニウムの製造方法
FR2576902B1 (fr) 1985-02-04 1987-02-13 Rhone Poulenc Spec Chim Procede de fabrication d'hydrogeno-silanes
JPS61191022A (ja) * 1985-02-20 1986-08-25 Canon Inc 堆積膜形成法
US4778692A (en) * 1985-02-20 1988-10-18 Canon Kabushiki Kaisha Process for forming deposited film
JPS61191512A (ja) 1985-02-20 1986-08-26 Toagosei Chem Ind Co Ltd ジシランの製造方法
JPH0688773B2 (ja) 1985-03-08 1994-11-09 三井東圧化学株式会社 ヘキサクロロジシランの製造方法
US4725419A (en) 1985-05-17 1988-02-16 Ethyl Corporation Silane production from magnesium hydride
EP0316472A1 (en) 1987-11-17 1989-05-24 Ethyl Corporation Silane production from magnesium hydride
JPS6217004A (ja) * 1985-07-12 1987-01-26 Mitsui Toatsu Chem Inc ゲルマン類の製造方法
US4824657A (en) 1985-11-27 1989-04-25 E. I. Du Pont De Nemours And Company Process for reducing silicon, germanium and tin halides
US4777023A (en) 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
US4792460A (en) * 1986-07-15 1988-12-20 Electric Power Research Institute, Inc. Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
US4847061A (en) 1987-07-20 1989-07-11 Ethyl Corporation Process for preparation of silane
JP2536027B2 (ja) 1988-03-16 1996-09-18 東亞合成株式会社 ジシランの製造方法
US4855120A (en) 1988-10-24 1989-08-08 Ethyl Corporation Production of silane and useful coproducts
DE3926595A1 (de) 1989-08-11 1991-02-14 Degussa Verfahren zur hydrierung halogensubstituierter verbindungen
JPH03205055A (ja) 1990-01-04 1991-09-06 Hara Herusu Kogyo Kk 浴槽の気泡発生装置
US5061470A (en) 1990-08-03 1991-10-29 Ethyl Corporation Silane production from hydridomagnesium chloride
JPH04130010A (ja) 1990-09-20 1992-05-01 Toagosei Chem Ind Co Ltd ジシランの製造方法
JP2965094B2 (ja) * 1991-06-28 1999-10-18 キヤノン株式会社 堆積膜形成方法
DE4239246C1 (de) * 1992-11-21 1993-12-16 Goldschmidt Ag Th Verfahren zur Herstellung von SiH-Gruppen aufweisenden Organopolysiloxanen
DE4306106A1 (de) 1993-02-27 1994-09-01 Thomas Dipl Chem Lobreyer Verfahren zur Herstellung von Silylgermanen
DE4313130C1 (de) 1993-04-22 1994-05-26 Goldschmidt Ag Th Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide
JPH08231949A (ja) * 1995-02-22 1996-09-10 Osaka Gas Co Ltd 有機電界発光素子
JPH09237927A (ja) * 1995-12-26 1997-09-09 Toshiba Corp 半導体薄膜形成方法および太陽電池の製造方法
US5866471A (en) * 1995-12-26 1999-02-02 Kabushiki Kaisha Toshiba Method of forming semiconductor thin film and method of fabricating solar cell
DE19812587C1 (de) 1998-03-23 1999-09-23 Wolfgang Sundermeyer Verfahren zur Hydrierung halogensubstituierter Siliziumverbindungen
JP2002246384A (ja) 2001-02-21 2002-08-30 Jsr Corp シリコン酸化膜の形成方法および形成用組成物
FR2827592B1 (fr) 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
KR100434698B1 (ko) * 2001-09-05 2004-06-07 주식회사 하이닉스반도체 반도체소자의 선택적 에피성장법
TWI231750B (en) 2002-07-17 2005-05-01 Delta Tooling Co Ltd Seat structure
US7238596B2 (en) 2003-06-13 2007-07-03 Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
DE10337309A1 (de) 2003-08-14 2005-03-10 Goldschmidt Ag Th Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide
US7498015B1 (en) * 2004-02-27 2009-03-03 Kovio, Inc. Method of making silane compositions
US7314513B1 (en) * 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7485691B1 (en) * 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
WO2006109427A1 (ja) 2005-04-07 2006-10-19 Toagosei Co., Ltd. 六塩化二ケイ素の精製方法及び高純度六塩化二ケイ素
EP1943669A4 (en) 2005-10-05 2012-06-13 Kovio Inc LINEAR AND NETWORKED HIGHLY MOLECULAR POLYSILANES, POLYGERMANES AND COPOLYMERS THEREOF, COMPOSITIONS CONTAINING THEM AND METHOD FOR THE PREPARATION AND USE OF SUCH COMPOUNDS AND COMPOSITIONS
WO2007062096A2 (en) 2005-11-23 2007-05-31 The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Silicon-germanium hydrides and methods for making and using same
JP5265376B2 (ja) 2005-11-23 2013-08-14 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 新規な水素化シリコンゲルマニウム、その製造法および使用法
NO326254B1 (no) * 2005-12-22 2008-10-27 Sinvent As Fremgangsmate for fremstilling av silan
JP2007254593A (ja) * 2006-03-23 2007-10-04 Jsr Corp ゲルマニウムポリマー、その製造法およびゲルマニウム膜の形成方法
KR101269201B1 (ko) * 2006-06-30 2013-05-28 삼성전자주식회사 폐 루프 방식의 다중 안테나 시스템에서 데이터송/수신장치 및 방법
EP2072464A4 (en) 2006-09-29 2010-09-01 Shinetsu Chemical Co PROCESS FOR CLEANING SILICON, SILICON AND SOLAR CELL
WO2008045327A2 (en) * 2006-10-06 2008-04-17 Kovio, Inc. Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers
EP2076558B8 (en) 2006-10-24 2018-08-01 Dow Silicones Corporation Composition comprising neopentasilane and method of preparing same
DE102007007874A1 (de) 2007-02-14 2008-08-21 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Silane
DE102007013219A1 (de) 2007-03-15 2008-09-18 Rev Renewable Energy Ventures, Inc. Plasmagestützte Synthese
ES2366597T3 (es) * 2007-03-30 2011-10-21 Spawnt Private S.À.R.L. Hiudrogenación catalítica.
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials
JP4714198B2 (ja) 2007-09-05 2011-06-29 信越化学工業株式会社 クロロシラン類の精製方法
DE102007000841A1 (de) 2007-10-09 2009-04-16 Wacker Chemie Ag Verfahren zur Herstellung von hochreinem Hexachlordisilan
DE102008025263B4 (de) 2008-05-27 2015-08-06 Spawnt Private S.À.R.L. Verfahren zum Aufreinigen von metallurgischem Silicium
DE102008036143A1 (de) 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
US9428618B2 (en) 2008-09-17 2016-08-30 Spawnt Private S.A.R.L. Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group
JP5206334B2 (ja) 2008-11-07 2013-06-12 東亞合成株式会社 クロロポリシランの製造方法
DE102008054537A1 (de) * 2008-12-11 2010-06-17 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
DE3635064C2 (https=) 1986-10-15 1991-11-07 Bayer Ag, 5090 Leverkusen, De
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
WO2006125425A1 (de) 2005-05-25 2006-11-30 Rev Renewable Energy Ventures Ag Verfahren zur herstellung von silicium aus halogensilanen
WO2008009473A1 (de) * 2006-07-20 2008-01-24 Rev Renewable Energy Ventures Ag Polysilanverarbeitung und verwendung
WO2009143823A2 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Halogeniertes polysilan und plasmachemisches verfahren zu dessen herstellung
WO2009143825A2 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Halogenidhaltiges silicium, verfahren zur herstellung desselben und verwendung desselben
WO2009143824A1 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Halogeniertes polysilan und thermisches verfahren zu dessen herstellung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016500361A (ja) * 2012-12-21 2016-01-12 エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ ハロゲン含有の高級シラン化合物の水素化方法

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