TWI562115B - Logic circuit and semiconductor device - Google Patents

Logic circuit and semiconductor device

Info

Publication number
TWI562115B
TWI562115B TW105110303A TW105110303A TWI562115B TW I562115 B TWI562115 B TW I562115B TW 105110303 A TW105110303 A TW 105110303A TW 105110303 A TW105110303 A TW 105110303A TW I562115 B TWI562115 B TW I562115B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
logic circuit
logic
circuit
semiconductor
Prior art date
Application number
TW105110303A
Other languages
English (en)
Chinese (zh)
Other versions
TW201627969A (zh
Inventor
Shunpei Yamazaki
Jun Koyama
Masashi Tsubuku
Kosei Noda
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of TW201627969A publication Critical patent/TW201627969A/zh
Application granted granted Critical
Publication of TWI562115B publication Critical patent/TWI562115B/zh

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0275—Details of drivers for data electrodes, other than drivers for liquid crystal, plasma or OLED displays, not related to handling digital grey scale data or to communication of data to the pixels by means of a current
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Electronic Switches (AREA)
  • Control Of El Displays (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dram (AREA)
TW105110303A 2009-10-16 2010-10-13 Logic circuit and semiconductor device TWI562115B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009238918 2009-10-16

Publications (2)

Publication Number Publication Date
TW201627969A TW201627969A (zh) 2016-08-01
TWI562115B true TWI562115B (en) 2016-12-11

Family

ID=43876068

Family Applications (11)

Application Number Title Priority Date Filing Date
TW105110303A TWI562115B (en) 2009-10-16 2010-10-13 Logic circuit and semiconductor device
TW107145967A TWI699741B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW102142999A TWI508042B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW107102090A TWI654588B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW113146619A TWI917088B (zh) 2009-10-16 2010-10-13 半導體裝置
TW105128050A TWI621113B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW109122745A TWI755783B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW111103428A TWI837576B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW099134892A TWI539417B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW106116700A TWI615825B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW113106842A TWI869212B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置

Family Applications After (10)

Application Number Title Priority Date Filing Date
TW107145967A TWI699741B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW102142999A TWI508042B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW107102090A TWI654588B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW113146619A TWI917088B (zh) 2009-10-16 2010-10-13 半導體裝置
TW105128050A TWI621113B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW109122745A TWI755783B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW111103428A TWI837576B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW099134892A TWI539417B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW106116700A TWI615825B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置
TW113106842A TWI869212B (zh) 2009-10-16 2010-10-13 邏輯電路及半導體裝置

Country Status (5)

Country Link
US (11) US8952726B2 (enExample)
JP (14) JP5106611B2 (enExample)
KR (12) KR101801538B1 (enExample)
TW (11) TWI562115B (enExample)
WO (1) WO2011046015A1 (enExample)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101318292B1 (ko) * 2007-11-30 2013-10-18 삼성전자주식회사 마이크로 히터, 마이크로 히터 어레이, 그 제조 방법 및이를 이용한 전자 장치
KR20090128006A (ko) * 2008-06-10 2009-12-15 삼성전자주식회사 마이크로 히터, 마이크로 히터 어레이, 그 제조 방법 및이를 이용한 패턴 형성 방법
KR101801538B1 (ko) * 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
CN113903796B (zh) 2009-10-16 2026-04-07 株式会社半导体能源研究所 逻辑电路和半导体器件
CN102598280B (zh) 2009-10-21 2016-05-18 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
KR101293261B1 (ko) 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
KR20130130879A (ko) * 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
CN102668077B (zh) * 2009-11-20 2015-05-13 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路,以及使用其的半导体器件
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9167234B2 (en) * 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2012153697A1 (en) * 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
US8508256B2 (en) * 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
WO2012160963A1 (en) * 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
US9467047B2 (en) * 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US8673426B2 (en) * 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
JP2013012610A (ja) * 2011-06-29 2013-01-17 Dainippon Printing Co Ltd 薄膜トランジスタおよびその製造方法
JP6116149B2 (ja) * 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
JP6099336B2 (ja) * 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
US9112037B2 (en) * 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013243565A (ja) * 2012-05-22 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置とその駆動方法
KR102059218B1 (ko) 2012-05-25 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
CN104303225B (zh) * 2012-06-01 2017-03-08 夏普株式会社 显示装置的驱动方法、显示装置以及具备该显示装置的便携设备
KR102141977B1 (ko) * 2012-07-20 2020-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
US9853053B2 (en) 2012-09-10 2017-12-26 3B Technologies, Inc. Three dimension integrated circuits employing thin film transistors
JP6254834B2 (ja) * 2012-12-06 2017-12-27 株式会社半導体エネルギー研究所 半導体装置
US9318484B2 (en) * 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9106223B2 (en) * 2013-05-20 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
KR20150008316A (ko) * 2013-07-12 2015-01-22 삼성디스플레이 주식회사 반도체 장치, 이의 제조 방법 및 시스템.
JP6207321B2 (ja) * 2013-09-26 2017-10-04 ローム株式会社 光センサ装置
KR102159682B1 (ko) * 2013-12-13 2020-10-15 삼성디스플레이 주식회사 액정 표시 장치
CN105849796B (zh) 2013-12-27 2020-02-07 株式会社半导体能源研究所 发光装置
JP2015188071A (ja) * 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
EP3152836A4 (en) * 2014-06-03 2018-06-06 Yale University Bootstrapping circuit and unipolar logic circuits using the same
KR102397388B1 (ko) 2014-07-24 2022-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 모듈 및 전자 기기
JP6427595B2 (ja) * 2014-11-28 2018-11-21 シャープ株式会社 半導体装置およびその製造方法
CN107112049A (zh) 2014-12-23 2017-08-29 3B技术公司 采用薄膜晶体管的三维集成电路
KR102348762B1 (ko) * 2015-01-21 2022-01-07 엘지디스플레이 주식회사 유기 발광 다이오드 표시 장치
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US9812587B2 (en) * 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10325131B2 (en) * 2015-06-30 2019-06-18 Synaptics Incorporated Active matrix capacitive fingerprint sensor for display integration based on charge sensing by a 2-TFT pixel architecture
US9946375B2 (en) 2015-06-30 2018-04-17 Synaptics Incorporated Active matrix capacitive fingerprint sensor with 2-TFT pixel architecture for display integration
US9958993B2 (en) 2015-06-30 2018-05-01 Synaptics Incorporated Active matrix capacitive fingerprint sensor with 1-TFT pixel architecture for display integration
US9880688B2 (en) 2015-08-05 2018-01-30 Synaptics Incorporated Active matrix capacitive sensor for common-mode cancellation
CN105097675B (zh) * 2015-09-22 2018-01-30 深圳市华星光电技术有限公司 阵列基板及其制备方法
JP2016177863A (ja) * 2016-04-11 2016-10-06 株式会社半導体エネルギー研究所 半導体装置
DE102016107643A1 (de) * 2016-04-25 2017-10-26 Endress+Hauser Process Solutions Ag Gerätezugriffssoftware mit umschaltbarem Darstellungsmodus
US10109633B2 (en) * 2016-04-27 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and authentication system
CN106057142B (zh) * 2016-05-26 2018-12-25 深圳市华星光电技术有限公司 显示装置及其控制方法
CN106057154B (zh) * 2016-07-25 2018-05-25 京东方科技集团股份有限公司 像素电路、显示器件、显示装置以及驱动方法
KR102588078B1 (ko) * 2016-11-21 2023-10-13 엘지디스플레이 주식회사 표시장치
KR102570976B1 (ko) * 2016-11-25 2023-08-28 엘지디스플레이 주식회사 표시장치와 그 소자 특성 센싱 방법
US10430633B2 (en) 2017-01-13 2019-10-01 Synaptics Incorporated Pixel architecture and driving scheme for biometric sensing
US10216972B2 (en) 2017-01-13 2019-02-26 Synaptics Incorporated Pixel architecture and driving scheme for biometric sensing
CN106950775A (zh) * 2017-05-16 2017-07-14 京东方科技集团股份有限公司 一种阵列基板和显示装置
JP6817155B2 (ja) 2017-06-23 2021-01-20 株式会社シマノ 自転車用制御装置およびこれを含む自転車用駆動システム
KR102597945B1 (ko) * 2017-09-15 2023-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN107799579B (zh) * 2017-11-29 2024-02-02 京东方科技集团股份有限公司 用于有机发光显示器件的背板及其制备方法、显示装置
US11508804B2 (en) 2017-11-29 2022-11-22 Ordos Yuansheng Optoelectronics, Co., Ltd. Organic light emitting display device
US11626875B2 (en) * 2018-04-20 2023-04-11 Texas Instruments Incorporated Stress reduction on stacked transistor circuits
US11831309B2 (en) 2018-04-20 2023-11-28 Texas Instruments Incorporated Stress reduction on stacked transistor circuits
KR102612577B1 (ko) 2018-08-13 2023-12-08 엘지디스플레이 주식회사 박막 트랜지스터 기판, 쉬프트 레지스터 및 표시장치
US10580768B1 (en) 2018-09-28 2020-03-03 Win Semiconductors Corp. Gallium arsenide cell
KR102932698B1 (ko) * 2018-11-09 2026-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN113168495B (zh) * 2018-11-27 2025-08-15 米尼码处理器公司 基于覆盖率的微电子电路及用于提供微电子电路的设计的方法
KR102782858B1 (ko) * 2019-02-08 2025-03-17 삼성디스플레이 주식회사 유기 발광 표시 장치
US10885955B2 (en) * 2019-04-03 2021-01-05 Micron Technology, Inc. Driver circuit equipped with power gating circuit
US10777153B1 (en) * 2019-05-16 2020-09-15 Himax Display, Inc. Method for calculating pixel voltage for liquid crystal on silicon display device
CN110148383B (zh) 2019-06-19 2021-01-26 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法以及栅极驱动电路
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
CN111243516B (zh) * 2020-03-19 2021-11-05 京东方科技集团股份有限公司 驱动电路、显示面板、显示装置及电路驱动方法
KR102755331B1 (ko) 2020-04-28 2025-01-21 보에 테크놀로지 그룹 컴퍼니 리미티드 표시 패널, 구동 방법 및 표시 장치
CN114005410B (zh) * 2020-07-28 2023-04-18 京东方科技集团股份有限公司 一种显示面板、其驱动方法及显示装置
TWI774392B (zh) * 2021-05-26 2022-08-11 敦泰電子股份有限公司 薄膜電晶體感光電路、顯示面板以及使用其之行動裝置
KR20240015964A (ko) * 2022-07-28 2024-02-06 엘지디스플레이 주식회사 게이트 구동회로 및 표시 장치
KR20260056590A (ko) * 2024-10-18 2026-04-27 엘지디스플레이 주식회사 박막 트랜지스터, 그 제조방법, 이를 포함하는 박막 트랜지스터 기판 및 이를 포함하는 표시장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060248421A1 (en) * 2005-04-28 2006-11-02 Choi Sang M Scan driver, organic light emitting display using the same, and method of driving the organic light emitting display
US20070274433A1 (en) * 2006-05-25 2007-11-29 Mitsubishi Electric Corporation Shift register circuit and image display apparatus equipped with the same
US20080143706A1 (en) * 2006-01-03 2008-06-19 Kim Mihae Organic electroluminescent display and a driver thereof
CN101258607A (zh) * 2005-09-06 2008-09-03 佳能株式会社 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法

Family Cites Families (228)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2556828C3 (de) 1975-12-17 1979-12-06 Deutsche Itt Industries Gmbh, 7800 Freiburg Dynamisches Schieberegister aus Isolierschicht-Feldeffekttransistoren
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPS6272223A (ja) 1985-09-25 1987-04-02 Nec Corp デ−タ出力バツフア回路
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JP2766859B2 (ja) 1989-06-16 1998-06-18 日本電信電話株式会社 絶縁ゲート形薄膜トランジスタ論理回路の駆動方法
JPH05243946A (ja) * 1992-02-28 1993-09-21 G T C:Kk インバータ回路
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH05335918A (ja) 1992-05-29 1993-12-17 Toshiba Corp 半導体集積回路
US5313222A (en) * 1992-12-24 1994-05-17 Yuen Foong Yu H. K. Co., Ltd. Select driver circuit for an LCD display
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法
JPH0946216A (ja) 1995-07-28 1997-02-14 Casio Comput Co Ltd 半導体装置
DE69635107D1 (de) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP2921510B2 (ja) 1996-10-07 1999-07-19 日本電気株式会社 ブートストラップ回路
KR100276442B1 (ko) 1998-02-20 2000-12-15 구본준 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4253826B2 (ja) * 1999-09-07 2009-04-15 カシオ計算機株式会社 画像読取装置
US6384461B1 (en) * 1999-10-15 2002-05-07 Xerox Corporation Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays
US6794725B2 (en) * 1999-12-21 2004-09-21 Xerox Corporation Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources
US6300648B1 (en) * 1999-12-28 2001-10-09 Xerox Corporation Continuous amorphous silicon layer sensors using sealed metal back contact
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US20010013313A1 (en) 2000-02-10 2001-08-16 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the structures
WO2002001648A1 (en) 2000-06-28 2002-01-03 Motorola, Inc. Semiconductor structure, device, circuit, and process
US20020000584A1 (en) 2000-06-28 2002-01-03 Motorola, Inc. Semiconductor structure and device including a monocrystalline conducting layer and method for fabricating the same
US20020008234A1 (en) 2000-06-28 2002-01-24 Motorola, Inc. Mixed-signal semiconductor structure, device including the structure, and methods of forming the device and the structure
US20020003239A1 (en) 2000-06-28 2002-01-10 Motorola, Inc. Semiconductor structure and device including a carbon film and method of forming the same
US20020030246A1 (en) 2000-06-28 2002-03-14 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate
US20020003238A1 (en) 2000-06-28 2002-01-10 Motorola, Inc. Structure including cubic boron nitride films and method of forming the same
JP2002057339A (ja) * 2000-08-10 2002-02-22 Sony Corp 薄膜半導体装置
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
US20030102432A1 (en) * 2001-04-12 2003-06-05 Epir Ltd. Monolithic infrared focal plane array detectors
US6605981B2 (en) 2001-04-26 2003-08-12 International Business Machines Corporation Apparatus for biasing ultra-low voltage logic circuits
JP4831895B2 (ja) 2001-08-03 2011-12-07 株式会社半導体エネルギー研究所 半導体装置
US6777317B2 (en) 2001-08-29 2004-08-17 Ultratech Stepper, Inc. Method for semiconductor gate doping
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP2003101029A (ja) * 2001-09-20 2003-04-04 Casio Comput Co Ltd 薄膜トランジスタ、フォトセンサ及びその製造方法
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
CN101673508B (zh) 2002-01-18 2013-01-09 株式会社半导体能源研究所 发光器件
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP4179800B2 (ja) 2002-05-24 2008-11-12 ソニー株式会社 表示装置及びその製造方法
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4339103B2 (ja) 2002-12-25 2009-10-07 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
TW591583B (en) 2003-05-09 2004-06-11 Toppoly Optoelectronics Corp Current register unit and circuit, and image display device applying the current register unit
TWI220051B (en) 2003-05-22 2004-08-01 Au Optronics Corp Shift register circuit
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
JP4572597B2 (ja) 2003-06-20 2010-11-04 日亜化学工業株式会社 窒化物半導体素子
JP4480968B2 (ja) 2003-07-18 2010-06-16 株式会社半導体エネルギー研究所 表示装置
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP4167565B2 (ja) 2003-07-31 2008-10-15 株式会社東芝 部分soi基板の製造方法
JP2005072144A (ja) * 2003-08-21 2005-03-17 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器
JP3962953B2 (ja) 2003-12-26 2007-08-22 カシオ計算機株式会社 レベルシフト回路及び該レベルシフト回路を備えた信号出力回路
US7691685B2 (en) * 2004-01-26 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4543700B2 (ja) 2004-02-27 2010-09-15 日亜化学工業株式会社 半導体発光素子
JP2005251348A (ja) 2004-03-08 2005-09-15 Casio Comput Co Ltd シフトレジスタ回路及びその駆動制御方法
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7223641B2 (en) * 2004-03-26 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
JP4522904B2 (ja) * 2004-04-19 2010-08-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7491590B2 (en) * 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006005116A (ja) 2004-06-17 2006-01-05 Casio Comput Co Ltd 膜形成方法、半導体膜、及び積層絶縁膜
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
TWI467531B (zh) 2004-09-16 2015-01-01 半導體能源研究所股份有限公司 顯示裝置和其驅動方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
AU2005302962B2 (en) 2004-11-10 2009-05-07 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
EP1810335B1 (en) 2004-11-10 2020-05-27 Canon Kabushiki Kaisha Light-emitting device
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP5118810B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
WO2006062217A1 (en) 2004-12-06 2006-06-15 Semiconductor Energy Laboratory Co., Ltd. Organic field-effect transistor and semiconductor device including the same
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
TWI445178B (zh) 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006104020A1 (en) * 2005-03-25 2006-10-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and electric appliance using the same
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
JP2006277789A (ja) * 2005-03-28 2006-10-12 Sony Corp シフトレジスタおよび表示装置
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US7888702B2 (en) * 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
US7688107B2 (en) 2005-04-19 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Shift register, display device, and electronic device
JP4890078B2 (ja) * 2005-04-19 2012-03-07 株式会社半導体エネルギー研究所 シフトレジスタ、表示装置、電子機器
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101577293B (zh) 2005-11-15 2012-09-19 株式会社半导体能源研究所 半导体器件及其制造方法
TWI328213B (en) 2005-12-16 2010-08-01 Chi Mei El Corp Plate display and pixel circuitry
JP5099740B2 (ja) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
JP2007207411A (ja) 2006-01-05 2007-08-16 Mitsubishi Electric Corp シフトレジスタ回路およびそれを備える画像表示装置
TW200735027A (en) 2006-01-05 2007-09-16 Mitsubishi Electric Corp Shift register and image display apparatus containing the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US8222116B2 (en) 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5276792B2 (ja) 2006-03-03 2013-08-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007250982A (ja) * 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
JP4912023B2 (ja) 2006-04-25 2012-04-04 三菱電機株式会社 シフトレジスタ回路
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101272337B1 (ko) 2006-09-01 2013-06-07 삼성디스플레이 주식회사 부분 화면 표시가 가능한 표시장치 및 그 구동방법
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4932415B2 (ja) 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
TWI831616B (zh) 2006-09-29 2024-02-01 日商半導體能源研究所股份有限公司 半導體裝置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
JP5254589B2 (ja) 2006-10-17 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8937013B2 (en) 2006-10-17 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor
TWI442368B (zh) 2006-10-26 2014-06-21 半導體能源研究所股份有限公司 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法
JP2008134625A (ja) * 2006-10-26 2008-06-12 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置及び電子機器
JP5227563B2 (ja) * 2006-10-26 2013-07-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7646015B2 (en) 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5216204B2 (ja) 2006-10-31 2013-06-19 株式会社半導体エネルギー研究所 液晶表示装置及びその作製方法
KR101281167B1 (ko) 2006-11-22 2013-07-02 삼성전자주식회사 유기발광 디스플레이의 단위 화소부 구동소자 및 그제조방법
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
JP5305630B2 (ja) 2006-12-05 2013-10-02 キヤノン株式会社 ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法
WO2008069255A1 (en) 2006-12-05 2008-06-12 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
US8143115B2 (en) 2006-12-05 2012-03-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
US7968884B2 (en) * 2006-12-05 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5401758B2 (ja) 2006-12-12 2014-01-29 サンケン電気株式会社 半導体装置及びその製造方法
JP2008151963A (ja) * 2006-12-15 2008-07-03 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP2008205763A (ja) 2007-02-20 2008-09-04 Ricoh Co Ltd 通信装置、通信方法およびプログラム
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
KR101338021B1 (ko) 2007-04-04 2013-12-06 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 유기 발광 표시 장치 및그 제조 방법
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP5197058B2 (ja) 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8513678B2 (en) * 2007-05-18 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8803781B2 (en) * 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
US8193045B2 (en) 2007-05-31 2012-06-05 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
KR101415562B1 (ko) 2007-08-06 2014-07-07 삼성디스플레이 주식회사 게이트 구동회로 및 이를 가지는 표시장치
JP4759598B2 (ja) * 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
US8083956B2 (en) 2007-10-11 2011-12-27 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
JP5489445B2 (ja) 2007-11-15 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
KR100946808B1 (ko) 2007-11-21 2010-03-11 주식회사 엔씰텍 다결정 실리콘 박막의 제조 방법, 이를 이용하여 제조된다결정 실리콘 박막, 및 이를 포함하는 박막트랜지스터
KR101270174B1 (ko) * 2007-12-03 2013-05-31 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법
JP5213422B2 (ja) 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
WO2009075281A1 (ja) 2007-12-13 2009-06-18 Idemitsu Kosan Co., Ltd. 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
KR20090073884A (ko) * 2007-12-31 2009-07-03 엘지디스플레이 주식회사 산화물반도체를 적용한 박막트랜지스터 제조방법
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP5125569B2 (ja) 2008-02-08 2013-01-23 ソニー株式会社 ブートストラップ回路
KR100935691B1 (ko) * 2008-02-29 2010-01-08 울산대학교 산학협력단 패킷 손실양 추정 기반의 패킷 스케줄링 방법
JP2009211732A (ja) 2008-02-29 2009-09-17 Eastman Kodak Co シフトレジスタ回路および表示装置
JP5305696B2 (ja) 2008-03-06 2013-10-02 キヤノン株式会社 半導体素子の処理方法
JP5073544B2 (ja) 2008-03-26 2012-11-14 富士フイルム株式会社 表示装置
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
US9000441B2 (en) * 2008-08-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8284142B2 (en) 2008-09-30 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US8330702B2 (en) 2009-02-12 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, display device, and electronic device
US8872751B2 (en) 2009-03-26 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having interconnected transistors and electronic device including the same
KR101752640B1 (ko) * 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5615018B2 (ja) * 2009-04-10 2014-10-29 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101944656B1 (ko) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
EP2449595B1 (en) 2009-06-30 2017-07-26 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI512997B (zh) 2009-09-24 2015-12-11 半導體能源研究所股份有限公司 半導體裝置,電源電路,和半導體裝置的製造方法
KR20230154098A (ko) 2009-10-08 2023-11-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101396096B1 (ko) * 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102598278B (zh) * 2009-10-09 2015-04-08 株式会社半导体能源研究所 半导体器件
KR101717460B1 (ko) 2009-10-16 2017-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
KR101844080B1 (ko) 2009-10-16 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 이를 구비한 전자 장치
KR101801538B1 (ko) * 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR20120107079A (ko) 2009-11-20 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터
JP6116149B2 (ja) * 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
KR101881853B1 (ko) * 2012-02-29 2018-07-26 삼성디스플레이 주식회사 에미션 구동 유닛, 에미션 구동부 및 이를 포함하는 유기 발광 표시 장치
US9553201B2 (en) * 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
JP2014057296A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
TWI581404B (zh) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
JP6635597B2 (ja) * 2015-06-12 2020-01-29 任天堂株式会社 情報処理システム、および、操作装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060248421A1 (en) * 2005-04-28 2006-11-02 Choi Sang M Scan driver, organic light emitting display using the same, and method of driving the organic light emitting display
CN101258607A (zh) * 2005-09-06 2008-09-03 佳能株式会社 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
US20080143706A1 (en) * 2006-01-03 2008-06-19 Kim Mihae Organic electroluminescent display and a driver thereof
US20070274433A1 (en) * 2006-05-25 2007-11-29 Mitsubishi Electric Corporation Shift register circuit and image display apparatus equipped with the same

Also Published As

Publication number Publication date
TWI869212B (zh) 2025-01-01
KR101698751B1 (ko) 2017-01-23
TW201415439A (zh) 2014-04-16
JP2015019383A (ja) 2015-01-29
KR20190090084A (ko) 2019-07-31
KR102314748B1 (ko) 2021-10-20
JP2026015358A (ja) 2026-01-29
KR101801538B1 (ko) 2017-11-27
TWI699741B (zh) 2020-07-21
KR20200004469A (ko) 2020-01-13
KR20210038703A (ko) 2021-04-07
KR101943293B1 (ko) 2019-01-29
JP2011103453A (ja) 2011-05-26
KR20170010075A (ko) 2017-01-25
JP5225494B2 (ja) 2013-07-03
KR20190014127A (ko) 2019-02-11
KR20220150429A (ko) 2022-11-10
KR20210128503A (ko) 2021-10-26
US9553583B2 (en) 2017-01-24
US20210296371A1 (en) 2021-09-23
TW201705111A (zh) 2017-02-01
JP2022118230A (ja) 2022-08-12
KR20120087914A (ko) 2012-08-07
TW202429419A (zh) 2024-07-16
JP2017188184A (ja) 2017-10-12
JP2013062809A (ja) 2013-04-04
JP2017121064A (ja) 2017-07-06
TWI654588B (zh) 2019-03-21
TW202107435A (zh) 2021-02-16
US11756966B2 (en) 2023-09-12
TWI615825B (zh) 2018-02-21
US9947695B2 (en) 2018-04-17
JP6144857B1 (ja) 2017-06-07
US20200212078A1 (en) 2020-07-02
KR102689629B1 (ko) 2024-07-31
JP2013168210A (ja) 2013-08-29
JP2024014950A (ja) 2024-02-01
WO2011046015A1 (en) 2011-04-21
KR102462043B1 (ko) 2022-11-03
JP6203974B2 (ja) 2017-09-27
TWI539417B (zh) 2016-06-21
KR102005736B1 (ko) 2019-07-31
US20230064813A1 (en) 2023-03-02
JP5602924B2 (ja) 2014-10-08
TW201818385A (zh) 2018-05-16
US11056515B2 (en) 2021-07-06
US20110090184A1 (en) 2011-04-21
US20250169184A1 (en) 2025-05-22
JP2021013029A (ja) 2021-02-04
TW201135700A (en) 2011-10-16
US10593710B2 (en) 2020-03-17
JP6254550B2 (ja) 2017-12-27
TWI508042B (zh) 2015-11-11
KR102235725B1 (ko) 2021-04-05
US12243881B2 (en) 2025-03-04
JP5762610B2 (ja) 2015-08-12
JP6473191B2 (ja) 2019-02-20
KR20230135155A (ko) 2023-09-22
KR20140007022A (ko) 2014-01-16
KR20240121336A (ko) 2024-08-08
JP5374654B2 (ja) 2013-12-25
TW202221677A (zh) 2022-06-01
US8884651B2 (en) 2014-11-11
US10002891B2 (en) 2018-06-19
TW202516477A (zh) 2025-04-16
TWI837576B (zh) 2024-04-01
US20180301476A1 (en) 2018-10-18
US20170200748A1 (en) 2017-07-13
US20230411410A1 (en) 2023-12-21
TWI755783B (zh) 2022-02-21
JP2017123468A (ja) 2017-07-13
TW201921328A (zh) 2019-06-01
JP2015228653A (ja) 2015-12-17
KR20170039763A (ko) 2017-04-11
TW201732768A (zh) 2017-09-16
US8952726B2 (en) 2015-02-10
KR101945301B1 (ko) 2019-02-07
US20170040350A1 (en) 2017-02-09
TWI621113B (zh) 2018-04-11
JP6773823B2 (ja) 2020-10-21
KR102577885B1 (ko) 2023-09-14
US20150097595A1 (en) 2015-04-09
TWI917088B (zh) 2026-03-01
JP2014053901A (ja) 2014-03-20
JP5106611B2 (ja) 2012-12-26
JP2019106540A (ja) 2019-06-27
US20140061639A1 (en) 2014-03-06
KR102065330B1 (ko) 2020-01-13
TW201627969A (zh) 2016-08-01

Similar Documents

Publication Publication Date Title
SG10201408329SA (en) Memory device, semiconductor device, and electronic device
TWI562330B (en) Semiconductor device
TWI562381B (en) Semiconductor device
EP2494692A4 (en) LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE
TWI562242B (en) Semiconductor device and manufacturing method thereof
GB2483414B (en) Semiconductor Device and Manufacturing Method Thereof
SG10201910510UA (en) Semiconductor device
SG10201406934WA (en) Semiconductor device
TWI442589B (en) Semiconductor device and electronic apparatus
TWI562517B (en) Voltage regulator circuit and semiconductor device
EP2494427A4 (en) DISPLAY DEVICE AND SEMICONDUCTOR ELEMENT
EP2497114A4 (en) SEMICONDUCTOR DEVICE
TWI562245B (en) Semiconductor device and method for manufacturing the same
TWI372466B (en) Semiconductor device
EP2465138A4 (en) SEMICONDUCTOR MODULE AND COOLING UNIT
EP2489075A4 (en) LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE
SG10201401237VA (en) Semiconductor processing reactor and components thereof
EP2413495A4 (en) Semiconductor integrated circuit device
SG10201402583TA (en) Resin composition for encapsulating semiconductor and semiconductor device
SG10201400672TA (en) Semiconductor devices having through-contacts and related fabrication methods
SG10201600407SA (en) Semiconductor device and manufacturing method of the same
GB2477492B (en) Integrated circuit package
EP2329429A4 (en) SEMICONDUCTOR COMPONENT
EP2472354A4 (en) ELECTRONIC DEVICE
EP2458828A4 (en) ELECTRONIC DEVICE