SG10201400672TA - Semiconductor devices having through-contacts and related fabrication methods - Google Patents
Semiconductor devices having through-contacts and related fabrication methodsInfo
- Publication number
- SG10201400672TA SG10201400672TA SG10201400672TA SG10201400672TA SG10201400672TA SG 10201400672T A SG10201400672T A SG 10201400672TA SG 10201400672T A SG10201400672T A SG 10201400672TA SG 10201400672T A SG10201400672T A SG 10201400672TA SG 10201400672T A SG10201400672T A SG 10201400672TA
- Authority
- SG
- Singapore
- Prior art keywords
- contacts
- semiconductor devices
- fabrication methods
- related fabrication
- methods
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/968,068 US8951907B2 (en) | 2010-12-14 | 2010-12-14 | Semiconductor devices having through-contacts and related fabrication methods |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201400672TA true SG10201400672TA (en) | 2014-05-29 |
Family
ID=46144822
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2011066073A SG182041A1 (en) | 2010-12-14 | 2011-09-14 | Semiconductor devices having through-contacts and related fabrication methods |
SG10201400672TA SG10201400672TA (en) | 2010-12-14 | 2011-09-14 | Semiconductor devices having through-contacts and related fabrication methods |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2011066073A SG182041A1 (en) | 2010-12-14 | 2011-09-14 | Semiconductor devices having through-contacts and related fabrication methods |
Country Status (6)
Country | Link |
---|---|
US (1) | US8951907B2 (en) |
KR (1) | KR101331250B1 (en) |
CN (2) | CN102543848A (en) |
DE (1) | DE102011085203B4 (en) |
SG (2) | SG182041A1 (en) |
TW (1) | TWI462188B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8507375B1 (en) * | 2012-02-02 | 2013-08-13 | GlobalFoundries, Inc. | Alignment tolerant semiconductor contact and method |
US9153483B2 (en) * | 2013-10-30 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
US9397004B2 (en) * | 2014-01-27 | 2016-07-19 | GlobalFoundries, Inc. | Methods for fabricating FinFET integrated circuits with simultaneous formation of local contact openings |
US9640444B2 (en) | 2014-07-23 | 2017-05-02 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
US9412659B1 (en) * | 2015-01-29 | 2016-08-09 | Globalfoundries Inc. | Semiconductor structure having source/drain gouging immunity |
US10153351B2 (en) | 2016-01-29 | 2018-12-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and a method for fabricating the same |
US10510851B2 (en) * | 2016-11-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low resistance contact method and structure |
US10867842B2 (en) * | 2018-10-31 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for shrinking openings in forming integrated circuits |
US11482495B2 (en) * | 2018-11-30 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor arrangement and method for making |
KR20210111396A (en) | 2020-03-02 | 2021-09-13 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
CN113555437A (en) * | 2020-04-26 | 2021-10-26 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
Family Cites Families (37)
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JP3500308B2 (en) | 1997-08-13 | 2004-02-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Integrated circuit |
TW374946B (en) * | 1997-12-03 | 1999-11-21 | United Microelectronics Corp | Definition of structure of dielectric layer patterns and the manufacturing method |
US6080661A (en) * | 1998-05-29 | 2000-06-27 | Philips Electronics North America Corp. | Methods for fabricating gate and diffusion contacts in self-aligned contact processes |
US6287961B1 (en) * | 1999-01-04 | 2001-09-11 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method without etch stop layer |
JP2000286254A (en) * | 1999-03-31 | 2000-10-13 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JP2001077212A (en) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | Semiconductor device and its manufacture |
KR100341663B1 (en) * | 1999-09-27 | 2002-06-24 | 윤종용 | Method of forming bit line contact holes in a semiconductor device with reduced photolithography process |
US6300201B1 (en) * | 2000-03-13 | 2001-10-09 | Chartered Semiconductor Manufacturing Ltd. | Method to form a high K dielectric gate insulator layer, a metal gate structure, and self-aligned channel regions, post source/drain formation |
JP2001338978A (en) * | 2000-05-25 | 2001-12-07 | Hitachi Ltd | Semiconductor device and its manufacturing method |
US6465294B1 (en) * | 2001-03-16 | 2002-10-15 | Taiwan Semiconductor Manufacturing Company | Self-aligned process for a stacked gate RF MOSFET device |
US20030060037A1 (en) * | 2001-09-27 | 2003-03-27 | Joseph Wu | Method of manufacturing trench conductor line |
KR100444306B1 (en) * | 2001-12-31 | 2004-08-16 | 주식회사 하이닉스반도체 | Manufacturing method for semiconductor device |
US6743712B2 (en) * | 2002-07-12 | 2004-06-01 | Intel Corporation | Method of making a semiconductor device by forming a masking layer with a tapered etch profile |
JP2004095611A (en) * | 2002-08-29 | 2004-03-25 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
US6673718B1 (en) | 2002-11-27 | 2004-01-06 | Samsung Electronics Co., Ltd. | Methods for forming aluminum metal wirings |
TWI250558B (en) * | 2003-10-23 | 2006-03-01 | Hynix Semiconductor Inc | Method for fabricating semiconductor device with fine patterns |
KR100562675B1 (en) * | 2003-11-04 | 2006-03-20 | 주식회사 하이닉스반도체 | Method of manufacturing in semiconductor devices |
TWI242797B (en) * | 2004-06-01 | 2005-11-01 | Nanya Technology Corp | Method for forming self-aligned contact of semiconductor device |
JP2006019480A (en) * | 2004-07-01 | 2006-01-19 | Nec Electronics Corp | Method for manufacturing semiconductor apparatus |
KR100621630B1 (en) * | 2004-08-25 | 2006-09-19 | 삼성전자주식회사 | Damascene processs using metals of two kinds |
KR100630749B1 (en) * | 2005-05-20 | 2006-10-02 | 삼성전자주식회사 | Method of fabricating semiconductor device |
DE102005052000B3 (en) * | 2005-10-31 | 2007-07-05 | Advanced Micro Devices, Inc., Sunnyvale | Semiconductor device having a contact structure based on copper and tungsten |
US20070099360A1 (en) * | 2005-11-03 | 2007-05-03 | International Business Machines Corporation | Integrated circuits having strained channel field effect transistors and methods of making |
US7960838B2 (en) * | 2005-11-18 | 2011-06-14 | United Microelectronics Corp. | Interconnect structure |
KR100741882B1 (en) * | 2005-12-29 | 2007-07-23 | 동부일렉트로닉스 주식회사 | Highvoltage device and Method for fabricating of the same |
US7365009B2 (en) * | 2006-01-04 | 2008-04-29 | United Microelectronics Corp. | Structure of metal interconnect and fabrication method thereof |
US20070257323A1 (en) * | 2006-05-05 | 2007-11-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked contact structure and method of fabricating the same |
KR100763514B1 (en) | 2006-06-30 | 2007-10-04 | 삼성전자주식회사 | Method of manufacturing an opening of a semiconductor device and method of manufacturing a semiconductor device using the same method |
JP4575400B2 (en) * | 2007-05-08 | 2010-11-04 | 株式会社東芝 | Manufacturing method of semiconductor device |
KR100830591B1 (en) * | 2007-06-07 | 2008-05-22 | 삼성전자주식회사 | Methods of forming a semiconductor device including openings |
DE102007057682A1 (en) | 2007-11-30 | 2009-06-04 | Advanced Micro Devices, Inc., Sunnyvale | A hybrid contact structure with a small aspect ratio contact in a semiconductor device |
JP2009158591A (en) * | 2007-12-25 | 2009-07-16 | Nec Electronics Corp | Semiconductor device and process for manufacturing same |
JP2010021295A (en) | 2008-07-09 | 2010-01-28 | Nec Electronics Corp | Semiconductor device and its manufacturing method |
US8058137B1 (en) * | 2009-04-14 | 2011-11-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US20100308380A1 (en) * | 2009-06-05 | 2010-12-09 | International Business Machines Corporation | Dual damascene processing for gate conductor and active area to first metal level interconnect structures |
JP5671220B2 (en) * | 2009-08-25 | 2015-02-18 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
US8277674B2 (en) * | 2009-12-15 | 2012-10-02 | United Microelectronics Corp. | Method of removing post-etch residues |
-
2010
- 2010-12-14 US US12/968,068 patent/US8951907B2/en not_active Expired - Fee Related
-
2011
- 2011-09-14 SG SG2011066073A patent/SG182041A1/en unknown
- 2011-09-14 SG SG10201400672TA patent/SG10201400672TA/en unknown
- 2011-10-13 CN CN201110309959XA patent/CN102543848A/en active Pending
- 2011-10-13 CN CN201510683289.6A patent/CN105374672A/en active Pending
- 2011-10-26 DE DE102011085203.4A patent/DE102011085203B4/en not_active Expired - Fee Related
- 2011-11-16 TW TW100141769A patent/TWI462188B/en not_active IP Right Cessation
- 2011-11-24 KR KR1020110123809A patent/KR101331250B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102543848A (en) | 2012-07-04 |
KR101331250B1 (en) | 2013-11-20 |
KR20120066584A (en) | 2012-06-22 |
DE102011085203A1 (en) | 2012-06-14 |
DE102011085203B4 (en) | 2018-08-23 |
TWI462188B (en) | 2014-11-21 |
TW201225183A (en) | 2012-06-16 |
US20120146106A1 (en) | 2012-06-14 |
SG182041A1 (en) | 2012-07-30 |
CN105374672A (en) | 2016-03-02 |
US8951907B2 (en) | 2015-02-10 |
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