CN106950775A - 一种阵列基板和显示装置 - Google Patents

一种阵列基板和显示装置 Download PDF

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CN106950775A
CN106950775A CN201710344166.9A CN201710344166A CN106950775A CN 106950775 A CN106950775 A CN 106950775A CN 201710344166 A CN201710344166 A CN 201710344166A CN 106950775 A CN106950775 A CN 106950775A
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display area
array base
base palte
effective display
conductive structure
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曾鹏
杜永刚
高章飞
徐国华
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Priority to CN201710344166.9A priority Critical patent/CN106950775A/zh
Publication of CN106950775A publication Critical patent/CN106950775A/zh
Priority to US16/097,538 priority patent/US10908465B2/en
Priority to PCT/CN2018/083182 priority patent/WO2018210083A1/zh
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • H01L27/0203—Particular design considerations for integrated circuits
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    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices

Abstract

本发明公开一种阵列基板，包括有效显示区和设置在有效显示区外侧的第一非显示区；第一非显示区内设置有虚拟像素单元，该虚拟像素单元包括第一导电区和第一导电结构，该第一导电结构一端与有效显示区的数据线连接，另一端与第一导电区连接，用于将所述数据线上的静电引至所述第一导电区。该结构的设置，可以将摩擦配向过程中在数据线上产生的静电，通过第一导电结构引至第一导电区，防止静电向有效显示区传递，对有效显示区的TFT器件造成破坏。

Description

一种阵列基板和显示装置
技术领域
本发明涉及显示器技术领域，特别是涉及一种阵列基板和显示装置。
背景技术
薄膜晶体管液晶显示(thin film transistor-liquid crystal display，TFT-LCD)广泛应用于移动应用、笔记本电脑、液晶电视等领域，已经成为平板显示的主流产品。
摩擦配向(Rubbing)是TFT-LCD制作过程中不可或缺的步骤，在该过程中，摩擦布(Rubbing Cloth)与玻璃基板(Glass)之间的摩擦势必会带来静电，如果静电得不到有效释放，就会在Glass上累积，当静电超过产品承受阈值时，就会产生各种静电不良现象。
现有产品设计中，Rubbing过程中产生的静电如果得不到有效释放，就只能通过数据线(Data)向TFT-LCD的有效显示区(Active Area，AA区)进行释放，从而击穿距离较近的1个或多个TFT沟道，最终形成不良，如图1所示，在显示时出现亮点或者亮线。
发明内容
为解决上述问题，本发明实施例提出了一种阵列基板，包括有效显示区和设置在所述有效显示区外侧的第一非显示区；所述第一非显示区内设置有虚拟像素单元，所述虚拟像素单元包括第一导电区和第一导电结构，所述第一导电结构与所述有效显示区的数据线连接，用于将所述数据线上的静电引至所述第一导电区。
可选地，所述导第一电结构包括TFT器件和引线；
所述引线一端与所述有效显示区的数据线电性连接，另一端与所述TFT器件连接，当所述数据线上有静电传输时，所述TFT器件导通，将所述数据线上的静电传输至所述第一导电区。
可选地，所述虚拟像素单元的栅线在所述每个虚拟像素单元间为断开状态；所述每个像素单元的TFT器件的栅极与所述栅线电性连接，所述TFT器件的源极与所述数据线电性连接，所述TFT器件的漏极与所述第一导电区连接；所述引线通过所在所述像素单元的栅线与所述TFT器件的栅极连接。
可选地，所述虚拟像素单元的TFT器件的沟道区宽长比大于所述有效显示区的TFT器件的沟道区宽长比。
可选地，所述第一非显示区围绕所述有效显示区设置，且所述第一非显示区内所述虚拟像素单元的第一导电区依次连接形成围绕所述有效显示区的导电带。
可选地，所述第一非显示区有至少两组，所述至少两组第一非显示区以所述有效显示区为中心逐层向外设置。
可选地，所述第一导电区的材质为透明导电金属ITO。
可选地，在所述有效显示区和所述第一非显示区之间还设置有第二非显示区；所述第二非显示区包括第二导电区和第二导电结构，所述第二导电结构的第一电极与所述第二非显示区的栅线连接；所述第二导电结构的第二电极与所述有效显示区的数据线连接。
为了解决上述问题，本发明实施例还提供了一种显示装置，包括上述阵列基板。
与现有技术相比，本发明实施例具有以下优点：
本发明实施例提供了一种阵列基板和显示装置，在有效显示区外侧设置第一非显示区，该非显示区虚拟像素单元内设置有第一导电区和第一导电结构，可以将摩擦配向过程中在数据线上产生的静电，通过第一导电结构引至第一导电区，防止静电向有效显示区传递，对有效显示区的TFT器件造成破坏。
附图说明
图1所示为静电击穿TFT沟道引起显示不良现象示意图。
图2所示为本发明实施例提供的一种阵列基板局部示意图。
图3所示为本发明实施例提供的第一导电结构示意图。
图4所示为本发明一实施例提供的另一种阵列基板局部示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获取的所有其他实施例，都属于本发明保护的范围。
实施例一
参照图2所示，为本发明实施例提供的一种阵列基板局部示意图，该阵列基板包括在有效显示区1和第一非显示区2，第一非显示区2设置在有效显示区1的外侧；在第一非显示区2内设置有虚拟像素单元，虚拟像素单元包括第一导电区21和第一导电结构22；第一导电结构22一端与有效显示区1的数据线3连接，另一端与第一导电区21连接。当基板在Rubbing过程中产生的静电，沿数据线3传递时，会通过第一导电结构22将静电引至第一导电区21上，避免了静电向有效显示区2传递，对TFT器件造成破坏。
可选地，上述第一非显示区2可以包含单个或多个像素单元，并且可以设置在有效显示区1的任一侧或者多侧。
在本发明的可选实施例中，第一非显示区2可以设置在有效显示区1的四个侧边，围绕有效显示区1设置；在第一非显示区2内设置有虚拟像素单元，虚拟像素单元包括第一导电区21和第一导电结构22；第一导电结构22一端与有效显示区1的数据线3连接，另一端与第一导电区21连接；其中每个虚拟像素单元的第一导电区21依次连接形成围绕有效显示区1的导电带。
这样，当基板在Rubbing过程中产生的静电，沿数据线3传递时，会通过第一导电结构22将静电引至第一导电区21上，每条数据线3上的静电都会引至所在像素单元的第一导电区21上，从而将静电引至由第一导电区21形成的导电带上，避免了静电向有效显示区2传递，对TFT器件造成破坏。
此外，上述第一非显示区可以有多组，并且这些多组第一非显示区以有效显示区为中心逐层向外设置，多组第一非显示区的设置，可以使静电在多组第一非显示区内传递，避免静电向有效显示区传递，增加可靠性。
通过上述内容可知，本发明实施例提供了一种阵列基板，在有效显示区外侧设置第一非显示区，该非显示区虚拟像素单元内设置有第一导电区和第一导电结构，可以将摩擦配向过程中在数据线上产生的静电，通过第一导电结构引致第一导电区，防止静电向有效显示区传递，对有效显示区的TFT器件造成破坏。
实施例二
参照图3，为本发明实施例提供的第一导电结构示意图，并结合图2，该第一导电结构包括TFT器件221和引线222；引线222一端与有效显示区的数据线3电性连接，另一端与TFT器件221连接。当数据线3上有静电传输时，会将TFT器件导通，从而将静电传输至第一导电区22上，避免了静电向有效显示区传递，对TFT器件造成破坏。
具体地，上述第一导电结构还包括形成在虚拟像素单元的栅线4，其中虚拟像素单元间的栅线为断开状态；TFT器件221的栅极(图中未示出)与栅线4电性连接，TFT器件221的源极与数据线3电性连接，TFT器件221的漏极与第一导电区21连接。
这样，各虚拟像素单元间的栅线断开设置，可以使得每条数据线的静电分别通过引线传至该虚拟像素单元的栅线，进而导通TFT器件，不会相互叠加造成局部静电过大，也节省了材料；其中，数据线上的静电通过引线传至所在虚拟像素单元的栅线，从而传至TFT器件的栅极，同时通过引线传输至TFT器件的源极，将TFT器件导通，进而，可以将静电引至第一导电区，避免了静电向有效显示区传递，对TFT器件造成破坏。
此外，可选地，该第一导电结构中TFT器件的沟道区宽长比大于有效显示区TFT器件的沟道区的宽长比，这样静电更容易导通第一非显示区的TFT器件，从而将静电引至非显示区的导电层。
本发明实施例提供了一种阵列基板，在有效显示区外侧设置第一非显示区，该非显示区虚拟像素单元内设置有第一导电区和第一导电结构，可以将摩擦配向过程中在数据线上产生的静电，通过第一导电结构引至第一导电区，防止静电向有效显示区传递，对有效显示区的TFT器件造成破坏。
实施例三
参照图4，为本发明实施例提供的另一种阵列基板局部示意图。该阵列基板与上述实施例中的阵列基板结构类似，区别在于，在有效显示区1和第一非显示区2之间设置了围绕有效显示区1的第二非显示区5。
如图4所示，该第二非显示区5包括第二导电区和第二导电结构51，第二导电结构51的第一电极(图中未示出)与第二非显示区的栅线连接，第二导电结构51的第二电极与所述有效显示区的数据线连接。
第二非显示区5的设置，可以保证有效显示区的周边像素与中间像素的周围环境一致，从而防止因有效显示区边缘的液晶分布不均匀造成的有效显示区的边缘效应。
本发明实施例提供了一种阵列基板，在有效显示区外侧设置第一非显示区，该非显示区虚拟像素单元内设置有第一导电区和第一导电结构，可以将摩擦配向过程中在数据线上产生的静电，通过第一导电结构引至第一导电区，防止静电向有效显示区传递，对有效显示区的TFT器件造成破坏。
可选地，在上述几个实施例中，第一导电区的材质选用透明导电金属ITO，该材料具有良好的透明度和导电性，是液晶显示设备中常用的导电材料。
本发明实施例还提供了一种显示装置。该显示装置包括上述的阵列基板。该阵列基板的结构在此不再赘述。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。对于系统实施例而言，由于其与方法实施例基本相似，所以描述的比较简单，相关之处参见方法实施例的部分说明即可。
尽管已描述了本发明实施例的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例做出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明实施例范围的所有变更和修改。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者终端设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者终端设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者终端设备中还存在另外的相同要素。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。

Claims (9)

1.一种阵列基板，其特征在于，包括有效显示区和设置在所述有效显示区外侧的第一非显示区；
所述第一非显示区内设置有虚拟像素单元，所述虚拟像素单元包括第一导电区和第一导电结构，所述第一导电结构一端与所述有效显示区的数据线连接，另一端与所述第一导电区连接，用于将所述数据线上的静电引至所述第一导电区。
2.根据权利要求1所述的阵列基板，其特征在于，
所述第一导电结构包括TFT器件和引线；
所述引线一端与所述有效显示区的数据线电性连接，另一端与所述TFT器件连接，当所述数据线上有静电传输时，所述TFT器件导通，将所述数据线上的静电传输至所述第一导电区。
3.根据权利要求2所述的阵列基板，其特征在于，所述第一导电结构还包括形成在所述虚拟像素单元内的栅线，所述虚拟像素单元间的栅线为断开状态；
所述TFT器件的栅极与所述栅线电性连接，所述栅线通过所述引线与所述数据线电性连接；所述TFT器件的源极与所述数据线电性连接，所述TFT器件的漏极与所述第一导电区连接。
4.根据权利要求3所述的阵列基板，其特征在于，所述虚拟像素单元的TFT器件的沟道区宽长比大于所述有效显示区的TFT器件的沟道区宽长比。
5.根据权利要求1所述的阵列基板，其特征在于，所述第一非显示区围绕所述有效显示区设置，且所述第一非显示区内所述虚拟像素单元的第一导电区依次连接形成围绕所述有效显示区的导电带。
6.根据权利要求1所述的阵列基板，其特征在于，所述第一非显示区有至少两组，所述至少两组第一非显示区以所述有效显示区为中心逐层向外设置。
7.根据权利要求1所述的阵列基板，其特征在于，所述第一导电区的材质为透明导电金属ITO。
8.根据权利要求1-7任一项所述的阵列基板，其特征在于，在所述有效显示区和所述第一非显示区之间还设置有第二非显示区；
所述第二非显示区包括第二导电区和第二导电结构，所述第二导电结构的第一电极与所述第二非显示区的栅线连接；所述第二导电结构的第二电极与所述有效显示区的数据线连接。
9.一种显示装置，其特征在于，包括权利要求1-8任一项所述的阵列基板。
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