TWI442448B - 使用選擇性沉積製程製備ｍｏｓｆｅｔ元件的方法 - Google Patents

使用選擇性沉積製程製備ｍｏｓｆｅｔ元件的方法 Download PDF

Info

Publication number
TWI442448B
TWI442448B TW094115281A TW94115281A TWI442448B TW I442448 B TWI442448 B TW I442448B TW 094115281 A TW094115281 A TW 094115281A TW 94115281 A TW94115281 A TW 94115281A TW I442448 B TWI442448 B TW I442448B
Authority
TW
Taiwan
Prior art keywords
substrate
germanium
ruthenium
sccm
containing layer
Prior art date
Application number
TW094115281A
Other languages
English (en)
Chinese (zh)
Other versions
TW200537592A (en
Inventor
薩摩羅伏阿爾凱帝Ｖ.
金以寬
桑契斯愛羅
達利達尼可拉斯Ｃ.
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200537592A publication Critical patent/TW200537592A/zh
Application granted granted Critical
Publication of TWI442448B publication Critical patent/TWI442448B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
TW094115281A 2004-05-14 2005-05-11 使用選擇性沉積製程製備ｍｏｓｆｅｔ元件的方法 TWI442448B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/845,984 US7132338B2 (en) 2003-10-10 2004-05-14 Methods to fabricate MOSFET devices using selective deposition process

Publications (2)

Publication Number Publication Date
TW200537592A TW200537592A (en) 2005-11-16
TWI442448B true TWI442448B (zh) 2014-06-21

Family

ID=35428740

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115281A TWI442448B (zh) 2004-05-14 2005-05-11 使用選擇性沉積製程製備ｍｏｓｆｅｔ元件的方法

Country Status (6)

Country Link
US (2) US7132338B2 (https=)
EP (1) EP1745503A2 (https=)
JP (1) JP2007537601A (https=)
CN (2) CN101593680B (https=)
TW (1) TWI442448B (https=)
WO (1) WO2005112577A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI914362B (zh) 2020-06-16 2026-02-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積含硼之矽鍺層的方法

Families Citing this family (190)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002306436A1 (en) * 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US7601225B2 (en) * 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US7294582B2 (en) * 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7297641B2 (en) * 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6921913B2 (en) * 2003-03-04 2005-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel transistor structure with lattice-mismatched zone
JP5288707B2 (ja) * 2003-03-12 2013-09-11 エーエスエム アメリカ インコーポレイテッド シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法
US7238595B2 (en) * 2003-03-13 2007-07-03 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US7682947B2 (en) * 2003-03-13 2010-03-23 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US7208362B2 (en) * 2003-06-25 2007-04-24 Texas Instruments Incorporated Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel
WO2005010946A2 (en) * 2003-07-23 2005-02-03 Asm America, Inc. DEPOSITION OF SiGe ON SILICON-ON-INSULATOR STRUCTURES AND BULK SUBSTRATES
KR20060039915A (ko) * 2003-07-30 2006-05-09 에이에스엠 아메리카, 인코포레이티드 완화된 실리콘 게르마늄 층의 에피택셜 성장
KR20060054387A (ko) * 2003-08-04 2006-05-22 에이에스엠 아메리카, 인코포레이티드 증착 전 게르마늄 표면 처리 방법
US8501594B2 (en) * 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
US20100120235A1 (en) * 2008-11-13 2010-05-13 Applied Materials, Inc. Methods for forming silicon germanium layers
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
JP3901696B2 (ja) * 2004-02-19 2007-04-04 株式会社東芝 半導体装置及びその製造方法
JP4982355B2 (ja) * 2004-02-27 2012-07-25 エーエスエム アメリカ インコーポレイテッド ゲルマニウム膜の形成方法
JP4874527B2 (ja) * 2004-04-01 2012-02-15 トヨタ自動車株式会社 炭化珪素半導体基板及びその製造方法
JP2007535147A (ja) * 2004-04-23 2007-11-29 エーエスエム アメリカ インコーポレイテッド インサイチュドープトエピタキシャルフィルム
US7172933B2 (en) * 2004-06-10 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Recessed polysilicon gate structure for a strained silicon MOSFET device
US20050275018A1 (en) * 2004-06-10 2005-12-15 Suresh Venkatesan Semiconductor device with multiple semiconductor layers
TWI463526B (zh) * 2004-06-24 2014-12-01 萬國商業機器公司 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件
DE102004031743B4 (de) * 2004-06-30 2006-10-05 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Epitaxieschicht für erhöhte Drain-und Sourcegebiete durch Entfernen von Oberflächendefekten der anfänglichen Kristalloberfläche
US7629270B2 (en) * 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US8673706B2 (en) 2004-09-01 2014-03-18 Micron Technology, Inc. Methods of forming layers comprising epitaxial silicon
US7531395B2 (en) * 2004-09-01 2009-05-12 Micron Technology, Inc. Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors
US7144779B2 (en) * 2004-09-01 2006-12-05 Micron Technology, Inc. Method of forming epitaxial silicon-comprising material
US7132355B2 (en) * 2004-09-01 2006-11-07 Micron Technology, Inc. Method of forming a layer comprising epitaxial silicon and a field effect transistor
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US7179696B2 (en) * 2004-09-17 2007-02-20 Texas Instruments Incorporated Phosphorus activated NMOS using SiC process
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7247535B2 (en) * 2004-09-30 2007-07-24 Texas Instruments Incorporated Source/drain extensions having highly activated and extremely abrupt junctions
US20060105559A1 (en) * 2004-11-15 2006-05-18 International Business Machines Corporation Ultrathin buried insulators in Si or Si-containing material
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7479431B2 (en) 2004-12-17 2009-01-20 Intel Corporation Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
US7704896B2 (en) * 2005-01-21 2010-04-27 Asm International, N.V. Atomic layer deposition of thin films on germanium
US7235492B2 (en) * 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US7348232B2 (en) * 2005-03-01 2008-03-25 Texas Instruments Incorporated Highly activated carbon selective epitaxial process for CMOS
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
WO2007035660A1 (en) * 2005-09-20 2007-03-29 Applied Materials, Inc. Method to form a device on a soi substrate
KR100663010B1 (ko) * 2005-09-23 2006-12-28 동부일렉트로닉스 주식회사 모스 트랜지스터 및 그 제조 방법
US7439558B2 (en) * 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
US7939413B2 (en) * 2005-12-08 2011-05-10 Samsung Electronics Co., Ltd. Embedded stressor structure and process
US7422950B2 (en) * 2005-12-14 2008-09-09 Intel Corporation Strained silicon MOS device with box layer between the source and drain regions
US7718500B2 (en) * 2005-12-16 2010-05-18 Chartered Semiconductor Manufacturing, Ltd Formation of raised source/drain structures in NFET with embedded SiGe in PFET
WO2007075369A1 (en) * 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
US7525160B2 (en) 2005-12-27 2009-04-28 Intel Corporation Multigate device with recessed strain regions
US8900980B2 (en) * 2006-01-20 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Defect-free SiGe source/drain formation by epitaxy-free process
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
US7608515B2 (en) * 2006-02-14 2009-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion layer for stressed semiconductor devices
DE102006009225B4 (de) * 2006-02-28 2009-07-16 Advanced Micro Devices, Inc., Sunnyvale Herstellung von Silizidoberflächen für Silizium/Kohlenstoff-Source/Drain-Gebiete
US7901968B2 (en) * 2006-03-23 2011-03-08 Asm America, Inc. Heteroepitaxial deposition over an oxidized surface
US7410875B2 (en) * 2006-04-06 2008-08-12 United Microelectronics Corp. Semiconductor structure and fabrication thereof
KR101074186B1 (ko) * 2006-04-07 2011-10-14 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 필름 형성을 위한 클러스터 툴
FR2900277B1 (fr) 2006-04-19 2008-07-11 St Microelectronics Sa Procede de formation d'une portion monocristalline a base de silicium
FR2900275A1 (fr) * 2006-04-19 2007-10-26 St Microelectronics Sa Procede de formation d'une portion monocristalline a base de silicium
JP4345774B2 (ja) 2006-04-26 2009-10-14 ソニー株式会社 半導体装置の製造方法
JP5130648B2 (ja) * 2006-04-27 2013-01-30 ソニー株式会社 半導体装置の製造方法および半導体装置
WO2007130916A2 (en) * 2006-05-01 2007-11-15 Applied Materials, Inc. A method of ultra-shallow junction formation using si film alloyed with carbon
US8278176B2 (en) * 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7648853B2 (en) 2006-07-11 2010-01-19 Asm America, Inc. Dual channel heterostructure
JP5076388B2 (ja) 2006-07-28 2012-11-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7494884B2 (en) * 2006-10-05 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. SiGe selective growth without a hard mask
JP5181466B2 (ja) * 2006-11-16 2013-04-10 ソニー株式会社 半導体装置の製造方法および半導体装置
US7741200B2 (en) * 2006-12-01 2010-06-22 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US20080132039A1 (en) * 2006-12-01 2008-06-05 Yonah Cho Formation and treatment of epitaxial layer containing silicon and carbon
US7837790B2 (en) * 2006-12-01 2010-11-23 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US7960236B2 (en) * 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US8394196B2 (en) * 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
US8217423B2 (en) * 2007-01-04 2012-07-10 International Business Machines Corporation Structure and method for mobility enhanced MOSFETs with unalloyed silicide
JP5100137B2 (ja) * 2007-01-26 2012-12-19 株式会社東芝 半導体装置の製造方法および半導体装置
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US7544997B2 (en) * 2007-02-16 2009-06-09 Freescale Semiconductor, Inc. Multi-layer source/drain stressor
KR100825809B1 (ko) * 2007-02-27 2008-04-29 삼성전자주식회사 스트레인층을 갖는 반도체 소자의 구조 및 그 제조 방법
US20080233722A1 (en) * 2007-03-23 2008-09-25 United Microelectronics Corp. Method of forming selective area compound semiconductor epitaxial layer
JP4896789B2 (ja) 2007-03-29 2012-03-14 株式会社東芝 半導体装置の製造方法
US20080274626A1 (en) * 2007-05-04 2008-11-06 Frederique Glowacki Method for depositing a high quality silicon dielectric film on a germanium substrate with high quality interface
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
JP5380794B2 (ja) * 2007-06-22 2014-01-08 富士通セミコンダクター株式会社 半導体装置の製造方法および半導体層の形成方法
DE102007030053B4 (de) * 2007-06-29 2011-07-21 Advanced Micro Devices, Inc., Calif. Reduzieren der pn-Übergangskapazität in einem Transistor durch Absenken von Drain- und Source-Gebieten
JP2009043938A (ja) * 2007-08-09 2009-02-26 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP4664950B2 (ja) 2007-08-20 2011-04-06 株式会社東芝 半導体装置
US7759199B2 (en) * 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7772097B2 (en) * 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
US20090152590A1 (en) * 2007-12-13 2009-06-18 International Business Machines Corporation Method and structure for semiconductor devices with silicon-germanium deposits
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
CN101925986B (zh) * 2008-01-25 2012-09-05 富士通半导体股份有限公司 半导体器件及其制造方法
KR101393308B1 (ko) * 2008-01-30 2014-05-12 삼성전자주식회사 실리사이드화 공정을 이용하는 반도체 소자의 제조 방법
KR101409374B1 (ko) 2008-04-10 2014-06-19 삼성전자 주식회사 반도체 집적 회로 장치의 제조 방법 및 그에 의해 제조된반도체 집적 회로 장치
US8293592B2 (en) * 2008-04-16 2012-10-23 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
US20100001317A1 (en) 2008-07-03 2010-01-07 Yi-Wei Chen Cmos transistor and the method for manufacturing the same
US8343583B2 (en) 2008-07-10 2013-01-01 Asm International N.V. Method for vaporizing non-gaseous precursor in a fluidized bed
KR101561059B1 (ko) * 2008-11-20 2015-10-16 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8012876B2 (en) * 2008-12-02 2011-09-06 Asm International N.V. Delivery of vapor precursor from solid source
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
JP5697849B2 (ja) * 2009-01-28 2015-04-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
DE102009006884B4 (de) * 2009-01-30 2011-06-30 Advanced Micro Devices, Inc., Calif. Verfahren zur Herstellung eines Transistorbauelementes mit In-Situ erzeugten Drain- und Source-Gebieten mit einer verformungsinduzierenden Legierung und einem graduell variierenden Dotierstoffprofil und entsprechendes Transistorbauelement
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US7994015B2 (en) 2009-04-21 2011-08-09 Applied Materials, Inc. NMOS transistor devices and methods for fabricating same
JP5287621B2 (ja) * 2009-09-10 2013-09-11 富士通セミコンダクター株式会社 半導体装置
US8367528B2 (en) * 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
TWI416727B (zh) * 2009-12-04 2013-11-21 華亞科技股份有限公司 Ｐ型金屬氧化層半導體場效電晶體及其製造方法
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US8598003B2 (en) * 2009-12-21 2013-12-03 Intel Corporation Semiconductor device having doped epitaxial region and its methods of fabrication
US9117905B2 (en) * 2009-12-22 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method for incorporating impurity element in EPI silicon process
US8012859B1 (en) 2010-03-31 2011-09-06 Tokyo Electron Limited Atomic layer deposition of silicon and silicon-containing films
EA022217B1 (ru) * 2010-05-12 2015-11-30 Бореалис Аг Полипропилен со специфическим содержанием стеарата кальция для специальных конденсаторов
CN102468326B (zh) * 2010-10-29 2015-01-07 中国科学院微电子研究所 接触电极制造方法和半导体器件
WO2012067625A1 (en) * 2010-11-19 2012-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Shallow heavily doped semiconductor layer by cyclic selective epitaxial deposition process
EP2461352B1 (en) * 2010-12-06 2013-07-10 Imec Method of manufacturing low resistivity contacts on n-type germanium
US8466502B2 (en) 2011-03-24 2013-06-18 United Microelectronics Corp. Metal-gate CMOS device
US8445363B2 (en) 2011-04-21 2013-05-21 United Microelectronics Corp. Method of fabricating an epitaxial layer
US8324059B2 (en) 2011-04-25 2012-12-04 United Microelectronics Corp. Method of fabricating a semiconductor structure
US8426284B2 (en) 2011-05-11 2013-04-23 United Microelectronics Corp. Manufacturing method for semiconductor structure
US8481391B2 (en) 2011-05-18 2013-07-09 United Microelectronics Corp. Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structure
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9218962B2 (en) * 2011-05-19 2015-12-22 Globalfoundries Inc. Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor
US8431460B2 (en) 2011-05-27 2013-04-30 United Microelectronics Corp. Method for fabricating semiconductor device
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
US8716750B2 (en) 2011-07-25 2014-05-06 United Microelectronics Corp. Semiconductor device having epitaxial structures
US8575043B2 (en) 2011-07-26 2013-11-05 United Microelectronics Corp. Semiconductor device and manufacturing method thereof
US8647941B2 (en) 2011-08-17 2014-02-11 United Microelectronics Corp. Method of forming semiconductor device
US8674433B2 (en) 2011-08-24 2014-03-18 United Microelectronics Corp. Semiconductor process
US8476169B2 (en) 2011-10-17 2013-07-02 United Microelectronics Corp. Method of making strained silicon channel semiconductor structure
US8691659B2 (en) 2011-10-26 2014-04-08 United Microelectronics Corp. Method for forming void-free dielectric layer
US8754448B2 (en) 2011-11-01 2014-06-17 United Microelectronics Corp. Semiconductor device having epitaxial layer
US9660049B2 (en) 2011-11-03 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor transistor device with dopant profile
US8647953B2 (en) 2011-11-17 2014-02-11 United Microelectronics Corp. Method for fabricating first and second epitaxial cap layers
US8709930B2 (en) 2011-11-25 2014-04-29 United Microelectronics Corp. Semiconductor process
CN103177962B (zh) * 2011-12-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法
CN103187299B (zh) * 2011-12-31 2015-08-05 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US9136348B2 (en) 2012-03-12 2015-09-15 United Microelectronics Corp. Semiconductor structure and fabrication method thereof
US9202914B2 (en) 2012-03-14 2015-12-01 United Microelectronics Corporation Semiconductor device and method for fabricating the same
US8664069B2 (en) 2012-04-05 2014-03-04 United Microelectronics Corp. Semiconductor structure and process thereof
US9263345B2 (en) * 2012-04-20 2016-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. SOI transistors with improved source/drain structures with enhanced strain
US8866230B2 (en) 2012-04-26 2014-10-21 United Microelectronics Corp. Semiconductor devices
US8835243B2 (en) 2012-05-04 2014-09-16 United Microelectronics Corp. Semiconductor process
US8951876B2 (en) 2012-06-20 2015-02-10 United Microelectronics Corp. Semiconductor device and manufacturing method thereof
US20130344688A1 (en) * 2012-06-20 2013-12-26 Zhiyuan Ye Atomic Layer Deposition with Rapid Thermal Treatment
US8796695B2 (en) 2012-06-22 2014-08-05 United Microelectronics Corp. Multi-gate field-effect transistor and process thereof
CN103531472B (zh) * 2012-07-03 2016-05-11 中芯国际集成电路制造(上海)有限公司 一种mosfet器件及其制备方法
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US8710632B2 (en) 2012-09-07 2014-04-29 United Microelectronics Corp. Compound semiconductor epitaxial structure and method for fabricating the same
JP5488675B2 (ja) * 2012-11-14 2014-05-14 ソニー株式会社 半導体装置の製造方法
US9117925B2 (en) 2013-01-31 2015-08-25 United Microelectronics Corp. Epitaxial process
US8753902B1 (en) 2013-03-13 2014-06-17 United Microelectronics Corp. Method of controlling etching process for forming epitaxial structure
US9034705B2 (en) 2013-03-26 2015-05-19 United Microelectronics Corp. Method of forming semiconductor device
US9064893B2 (en) 2013-05-13 2015-06-23 United Microelectronics Corp. Gradient dopant of strained substrate manufacturing method of semiconductor device
US8853060B1 (en) 2013-05-27 2014-10-07 United Microelectronics Corp. Epitaxial process
US9076652B2 (en) 2013-05-27 2015-07-07 United Microelectronics Corp. Semiconductor process for modifying shape of recess
US8765546B1 (en) 2013-06-24 2014-07-01 United Microelectronics Corp. Method for fabricating fin-shaped field-effect transistor
US8895396B1 (en) 2013-07-11 2014-11-25 United Microelectronics Corp. Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures
US8981487B2 (en) 2013-07-31 2015-03-17 United Microelectronics Corp. Fin-shaped field-effect transistor (FinFET)
US9224657B2 (en) * 2013-08-06 2015-12-29 Texas Instruments Incorporated Hard mask for source/drain epitaxy control
CN104347512B (zh) * 2013-08-07 2017-07-14 中芯国际集成电路制造(上海)有限公司 Cmos晶体管的形成方法
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
CN105097694B (zh) * 2014-05-21 2020-06-09 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制备方法
KR102216511B1 (ko) 2014-07-22 2021-02-18 삼성전자주식회사 반도체 소자
CN105448991B (zh) * 2014-09-01 2019-05-28 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
KR102230198B1 (ko) 2014-09-23 2021-03-19 삼성전자주식회사 반도체 소자 및 이의 제조 방법
CN105590852A (zh) * 2014-10-21 2016-05-18 上海华力微电子有限公司 嵌入式锗硅外延位错缺陷的改善方法
US9722045B2 (en) * 2015-10-23 2017-08-01 Globalfoundries Inc. Buffer layer for modulating Vt across devices
TWI812984B (zh) 2016-12-12 2023-08-21 美商應用材料股份有限公司 形成應變通道層的方法
US10256322B2 (en) 2017-04-04 2019-04-09 Applied Materials, Inc. Co-doping process for n-MOS source drain application
US9923081B1 (en) 2017-04-04 2018-03-20 Applied Materials, Inc. Selective process for source and drain formation
EP3830860A4 (en) 2018-07-30 2022-04-20 Applied Materials, Inc. PROCESS FOR SELECTIVE SILICON-GERMANIUM EPITAXY AT LOW TEMPERATURES
WO2020036820A1 (en) * 2018-08-11 2020-02-20 Applied Materials, Inc. Doping techniques
US20200066516A1 (en) * 2018-08-24 2020-02-27 Micron Technology, Inc. Semiconductor Structures Which Include Laminates of First and Second Regions, and Methods of Forming Semiconductor Structures
US11145504B2 (en) 2019-01-14 2021-10-12 Applied Materials, Inc. Method of forming film stacks with reduced defects
CN112309843B (zh) * 2019-07-29 2026-01-23 Asmip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
KR20210156219A (ko) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI908816B (zh) * 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
US20220102200A1 (en) * 2020-09-30 2022-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning material including carbon-containing layer and method for semiconductor device fabrication
US12444605B2 (en) 2022-01-12 2025-10-14 Applied Materials, Inc. Epitaxial methods including a haloborane formula for growing boron-containing structures having increased boron concentrations
CN116435168A (zh) * 2022-01-13 2023-07-14 Asm Ip私人控股有限公司 形成半导体外延层的外延叠层的方法和晶片处理炉
TW202342835A (zh) 2022-01-13 2023-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於複數個基板上形成磊晶堆疊之方法及晶圓處理爐
US20240035195A1 (en) * 2022-07-29 2024-02-01 Applied Materials, Inc. Methods, systems, and apparatus for forming layers having single crystalline structures

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898917A (ja) 1981-12-09 1983-06-13 Seiko Epson Corp 原子層エビタキシヤル装置
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5294286A (en) 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
JPS62171999A (ja) 1986-01-27 1987-07-28 Nippon Telegr & Teleph Corp <Ntt> ３−ｖ族化合物半導体のエピタキシヤル結晶成長方法
JPS6362313A (ja) 1986-09-03 1988-03-18 Fujitsu Ltd 半導体装置の製造方法
JPH0639357B2 (ja) 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
US5607511A (en) 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
JPH01270593A (ja) 1988-04-21 1989-10-27 Fujitsu Ltd 化合物半導体層形成方法
US5112439A (en) 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
JPH02172895A (ja) 1988-12-22 1990-07-04 Nec Corp 半導体の結晶成長方法
JPH0824191B2 (ja) 1989-03-17 1996-03-06 富士通株式会社 薄膜トランジスタ
EP0413982B1 (en) 1989-07-27 1997-05-14 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
JPH03286522A (ja) 1990-04-03 1991-12-17 Nec Corp Ｓｉの結晶成長方法
JPH0547665A (ja) 1991-08-12 1993-02-26 Fujitsu Ltd 気相成長方法
JP2828152B2 (ja) 1991-08-13 1998-11-25 富士通 株式会社 薄膜形成方法、多層構造膜及びシリコン薄膜トランジスタの形成方法
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JPH0750690B2 (ja) 1992-08-21 1995-05-31 日本電気株式会社 ハロゲン化物を用いる半導体結晶のエピタキシャル成長方法とその装置
US5273930A (en) 1992-09-03 1993-12-28 Motorola, Inc. Method of forming a non-selective silicon-germanium epitaxial film
US5372860A (en) 1993-07-06 1994-12-13 Corning Incorporated Silicon device production
JPH07109573A (ja) 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
EP0799495A4 (en) * 1994-11-10 1999-11-03 Lawrence Semiconductor Researc Silicon-germanium-carbon compositions and processes thereof
US5846867A (en) * 1995-12-20 1998-12-08 Sony Corporation Method of producing Si-Ge base heterojunction bipolar device
AUPO347196A0 (en) 1996-11-06 1996-12-05 Pacific Solar Pty Limited Improved method of forming polycrystalline-silicon films on glass
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
JPH10189459A (ja) * 1996-12-27 1998-07-21 Sony Corp ボロンドープ・シリコン−ゲルマニウム混晶の形成方法
US6335280B1 (en) 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
US6118216A (en) 1997-06-02 2000-09-12 Osram Sylvania Inc. Lead and arsenic free borosilicate glass and lamp containing same
US6042654A (en) 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US6514880B2 (en) 1998-02-05 2003-02-04 Asm Japan K.K. Siloxan polymer film on semiconductor substrate and method for forming same
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
US6159852A (en) 1998-02-13 2000-12-12 Micron Technology, Inc. Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor
DE69901488T2 (de) * 1998-02-13 2003-01-09 Akzo Nobel N.V., Arnheim/Arnhem Optisches aufzeichnungsmedum mit dünnen aufzeichnungsschichten
US6797558B2 (en) 2001-04-24 2004-09-28 Micron Technology, Inc. Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer
WO1999045167A1 (en) 1998-03-06 1999-09-10 Asm America, Inc. Method of depositing silicon with high step coverage
JP4214585B2 (ja) 1998-04-24 2009-01-28 富士ゼロックス株式会社 半導体デバイス、半導体デバイスの製造方法及び製造装置
US6025627A (en) 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
JP3809035B2 (ja) * 1998-06-29 2006-08-16 株式会社東芝 Ｍｉｓ型トランジスタおよびその製造方法
KR100287180B1 (ko) 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
DE19845427A1 (de) * 1998-10-02 2000-04-06 Basf Ag Vorrichtung zum Aufbringen eines fließfähigen Mediums auf eine bewegte Oberfläche und deren Verwendung
KR20010080432A (ko) * 1998-11-12 2001-08-22 피터 엔. 데트킨 계단식 소스/드레인 접합을 갖는 전계 효과 트랜지스터 구조
US6235568B1 (en) * 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
JP2001024194A (ja) * 1999-05-06 2001-01-26 Toshiba Corp 半導体装置の製造方法及び半導体装置
EP1965431A2 (en) * 1999-06-22 2008-09-03 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method for fabricating the same
KR20010017820A (ko) 1999-08-14 2001-03-05 윤종용 반도체 소자 및 그 제조방법
US6489241B1 (en) 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
TW468212B (en) 1999-10-25 2001-12-11 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon
WO2001041544A2 (en) 1999-12-11 2001-06-14 Asm America, Inc. Deposition of gate stacks including silicon germanium layers
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
EP1123991A3 (en) 2000-02-08 2002-11-13 Asm Japan K.K. Low dielectric constant materials and processes
EP1264335A1 (en) 2000-03-17 2002-12-11 Varian Semiconductor Equipment Associates Inc. Method of forming ultrashallow junctions by laser annealing and rapid thermal annealing
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
JP2001338988A (ja) * 2000-05-25 2001-12-07 Hitachi Ltd 半導体装置及びその製造方法
JP4882141B2 (ja) * 2000-08-16 2012-02-22 富士通株式会社 ヘテロバイポーラトランジスタ
JP2002198525A (ja) 2000-12-27 2002-07-12 Toshiba Corp 半導体装置及びその製造方法
KR100393208B1 (ko) 2001-01-15 2003-07-31 삼성전자주식회사 도핑된 다결정 실리콘-저매니움막을 이용한 반도체 소자및 그 제조방법
US6528374B2 (en) 2001-02-05 2003-03-04 International Business Machines Corporation Method for forming dielectric stack without interfacial layer
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
AU2002306436A1 (en) 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
JP3890202B2 (ja) 2001-03-28 2007-03-07 株式会社日立製作所 半導体装置の製造方法
US7005372B2 (en) * 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US6905542B2 (en) * 2001-05-24 2005-06-14 Arkadii V. Samoilov Waveguides such as SiGeC waveguides and method of fabricating the same
KR20080103609A (ko) 2001-05-30 2008-11-27 에이에스엠 아메리카, 인코포레이티드 저온 로딩 및 소성
JP4277467B2 (ja) * 2001-10-29 2009-06-10 株式会社Ｓｕｍｃｏ 半導体基板及び電界効果型トランジスタ並びにこれらの製造方法
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
JP2004079887A (ja) * 2002-08-21 2004-03-11 Renesas Technology Corp 半導体装置
JP2004095639A (ja) * 2002-08-29 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
US6998305B2 (en) 2003-01-24 2006-02-14 Asm America, Inc. Enhanced selectivity for epitaxial deposition
US20040226911A1 (en) 2003-04-24 2004-11-18 David Dutton Low-temperature etching environment
US6982433B2 (en) 2003-06-12 2006-01-03 Intel Corporation Gate-induced strain for MOS performance improvement
US20050007692A1 (en) * 2003-06-26 2005-01-13 Spectra Logic Corporation Magazine-Based Data Cartridge Library
US6855963B1 (en) 2003-08-29 2005-02-15 International Business Machines Corporation Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7045432B2 (en) 2004-02-04 2006-05-16 Freescale Semiconductor, Inc. Method for forming a semiconductor device with local semiconductor-on-insulator (SOI)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI914362B (zh) 2020-06-16 2026-02-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積含硼之矽鍺層的方法

Also Published As

Publication number Publication date
US7132338B2 (en) 2006-11-07
TW200537592A (en) 2005-11-16
WO2005112577A3 (en) 2006-05-26
EP1745503A2 (en) 2007-01-24
WO2005112577A2 (en) 2005-12-01
CN101593680B (zh) 2011-02-23
US7439142B2 (en) 2008-10-21
US20070082451A1 (en) 2007-04-12
US20050079692A1 (en) 2005-04-14
CN101593680A (zh) 2009-12-02
JP2007537601A (ja) 2007-12-20
CN100511587C (zh) 2009-07-08
CN1926664A (zh) 2007-03-07

Similar Documents

Publication Publication Date Title
TWI442448B (zh) 使用選擇性沉積製程製備ｍｏｓｆｅｔ元件的方法
US7737007B2 (en) Methods to fabricate MOSFET devices using a selective deposition process
JP5371229B2 (ja) シリコンと炭素を含有するエピタキシャル層の形成及び処理
US7521365B2 (en) Selective epitaxy process with alternating gas supply
TWI400744B (zh) 含矽與碳磊晶層之形成
US7960236B2 (en) Phosphorus containing Si epitaxial layers in N-type source/drain junctions
JP2009535859A (ja) 炭素を混合したｓｉ膜を使用した極浅接合形成の方法
WO2008073894A1 (en) Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US20080132039A1 (en) Formation and treatment of epitaxial layer containing silicon and carbon
KR20070022046A (ko) 선택적인 증착 프로세스들을 이용하여 ｍｏｓｆｅｔ 소자를제조하는 방법

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent