FR2900277B1 - Procede de formation d'une portion monocristalline a base de silicium - Google Patents

Procede de formation d'une portion monocristalline a base de silicium

Info

Publication number
FR2900277B1
FR2900277B1 FR0603453A FR0603453A FR2900277B1 FR 2900277 B1 FR2900277 B1 FR 2900277B1 FR 0603453 A FR0603453 A FR 0603453A FR 0603453 A FR0603453 A FR 0603453A FR 2900277 B1 FR2900277 B1 FR 2900277B1
Authority
FR
France
Prior art keywords
silicon
forming
monocrystalline portion
based monocrystalline
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0603453A
Other languages
English (en)
Other versions
FR2900277A1 (fr
Inventor
Didier Dutartre
Laurent Rubaldo
Alexandre Talbot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0603453A priority Critical patent/FR2900277B1/fr
Priority to US11/788,391 priority patent/US8158495B2/en
Publication of FR2900277A1 publication Critical patent/FR2900277A1/fr
Application granted granted Critical
Publication of FR2900277B1 publication Critical patent/FR2900277B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
FR0603453A 2006-04-19 2006-04-19 Procede de formation d'une portion monocristalline a base de silicium Expired - Fee Related FR2900277B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0603453A FR2900277B1 (fr) 2006-04-19 2006-04-19 Procede de formation d'une portion monocristalline a base de silicium
US11/788,391 US8158495B2 (en) 2006-04-19 2007-04-18 Process for forming a silicon-based single-crystal portion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0603453A FR2900277B1 (fr) 2006-04-19 2006-04-19 Procede de formation d'une portion monocristalline a base de silicium

Publications (2)

Publication Number Publication Date
FR2900277A1 FR2900277A1 (fr) 2007-10-26
FR2900277B1 true FR2900277B1 (fr) 2008-07-11

Family

ID=37714441

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0603453A Expired - Fee Related FR2900277B1 (fr) 2006-04-19 2006-04-19 Procede de formation d'une portion monocristalline a base de silicium

Country Status (2)

Country Link
US (1) US8158495B2 (fr)
FR (1) FR2900277B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201506367TA (en) 2013-03-15 2015-09-29 Applied Materials Inc Apparatus and methods for pulsed photo-excited deposition and etch
FR3105571B1 (fr) * 2019-12-18 2023-01-13 Commissariat Energie Atomique Procédé de formation d’une couche par épitaxie cyclée

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
JPS5861622A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 単結晶薄膜の製造方法
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
KR100430404B1 (ko) * 2001-06-02 2004-05-04 삼성전자주식회사 구조 선택적 에피택시얼 성장 기술 및 선택적 실리콘 식각기술을 사용한 단결정 실리콘 패턴 형성 방법
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
WO2004081986A2 (fr) * 2003-03-12 2004-09-23 Asm America Inc. Procede de planarisation et de reduction de la densite des defauts du silicium germanium
US7468311B2 (en) * 2003-09-30 2008-12-23 Tokyo Electron Limited Deposition of silicon-containing films from hexachlorodisilane
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7226842B2 (en) * 2004-02-17 2007-06-05 Intel Corporation Fabricating strained channel epitaxial source/drain transistors
US20060071213A1 (en) * 2004-10-04 2006-04-06 Ce Ma Low temperature selective epitaxial growth of silicon germanium layers
KR100653853B1 (ko) * 2005-05-24 2006-12-05 네오폴리((주)) 비금속 씨드 에피 성장을 이용한 비정질 반도체 박막의결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의제조방법
US7364976B2 (en) * 2006-03-21 2008-04-29 Intel Corporation Selective etch for patterning a semiconductor film deposited non-selectively
JP2007329200A (ja) * 2006-06-06 2007-12-20 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US8158495B2 (en) 2012-04-17
US20070254451A1 (en) 2007-11-01
FR2900277A1 (fr) 2007-10-26

Similar Documents

Publication Publication Date Title
BRPI0819494A2 (pt) "processo de formação de nanofibras"
FR2912742B1 (fr) Procede de synthese d'acrylonitrile a partir de glycerol
FI20065404A0 (fi) Prosessi perusöljyn valmistamiseksi
FR2909920B1 (fr) Procede de realisation d'un ensemble carter-divergent
FR2903682B1 (fr) Procede de preparation d'une composition de talc synthetique a partir d'une composition de kerolites.
BRPI0812422A2 (pt) Processo de preparação de um aldeído hidroxiaromático
FR2940172B1 (fr) Procede de fabrication d'une aube de turbomachine
AT503311A3 (de) Vertikale mikrospritzgiessmaschine
FR2935618B1 (fr) Procede pour former un revetement anti-adherent a base de carbure de silicium
FI20055665L (fi) Prosessi haarautuneen hiilivetykomponentin valmistamiseksi
ITPD20060033U1 (it) Macchina multifunzionale per vivaismo
ITBO20060718A1 (it) Macchina per la produzione di filtri composti
ITMI20062038A1 (it) Unita' sincronizzatrice specialmente per cambi di velocita'
FR2937647B1 (fr) Procede d'obtention de biokerosene
IL225873A0 (en) Process for the production of trazodone and trazodone hydrochloride
FR2895391B1 (fr) Procede d'elaboration de nanostructures ordonnees
FR2910468B1 (fr) Procede d'obtention d'une structure poreuse a base de carbure de silicium
FR2900277B1 (fr) Procede de formation d'une portion monocristalline a base de silicium
FR2890959B1 (fr) Procede de preparation d'une composition de platre.
ZA200804369B (en) Process for producing a silicon nitride compound
FR2889524B1 (fr) Procede de formation d'une liaison carbone-azote
FR2926338B1 (fr) Support forme a partir d'une tole
FR2887263B1 (fr) Procede de preparation d'un monocristal de paratellurite
ITMI20062481A1 (it) Processo per la preparazione di lansoprazolo forma i microcristallino
FR2908739B1 (fr) Machine d'operculage

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231