TW201430944A - 非原地的電漿氧化物蝕刻 - Google Patents

非原地的電漿氧化物蝕刻 Download PDF

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TW201430944A
TW201430944A TW102144423A TW102144423A TW201430944A TW 201430944 A TW201430944 A TW 201430944A TW 102144423 A TW102144423 A TW 102144423A TW 102144423 A TW102144423 A TW 102144423A TW 201430944 A TW201430944 A TW 201430944A
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zhi-jun Chen
Seung-Ho Park
Mikhail Korolik
An-Chuan Wang
Nitin K Ingle
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Applied Materials Inc
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    • H—ELECTRICITY
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Abstract

茲描述一種蝕刻異質結構上曝露的氧化鈦的方法，該方法包括由含氟前驅物形成的遠端電漿蝕刻。使來自遠端電漿的電漿流出物流入基板處理區域，其中該電漿流出物可以與含氮前驅物結合，該含氮前驅物例如含胺(N:)前驅物。藉此產生的反應物會在基板處於高溫時以高的氧化鈦選擇性蝕刻圖案化的異質結構。或者，氧化鈦蝕刻可能涉及供應含氟前驅物及含-氮-和-氫前驅物的來源到遠端電漿。可以使用該方法來去除氧化鈦，同時去除極少的或未去除低介電常數(K)介電質、多晶矽、氮化矽或氮化鈦。

Description

非原地的電漿氧化物蝕刻 【相關申請案的交叉引用】
本專利申請案主張於2012年12月18日提出申請並且標題為「非原地的電漿氧化物蝕刻(NON-LOCAL PLASMA OXIDE ETCH)」的美國臨時專利申請案第61/738,855號的優先權權益，為了所有的目的將該申請案之內容以引用方式整體併入本文中。
本發明係關於非原地的電漿氧化物蝕刻。
積體電路是採用在基板表面上產生圖案複雜的材料層的製程才能被製成。在基板上產生圖案化的材料需要使用受控制的方法來去除曝露的材料。化學蝕刻被使用於各種的目的，包括將光阻中的圖案轉移到下面的層、薄化層或薄化已經存在表面上的特徵的橫向尺寸。往往理想的是具有蝕刻一種材料比蝕刻另一種材料更快以幫助例如圖案轉移製程進行的蝕刻製程。這樣的蝕刻製程被說成對第一種材料有選擇性。由於材料、電路及製程的多樣性的結果，蝕刻製程已經被開發出具有對各種材料的選擇性。然而，對於比矽更快地 選擇性蝕刻氮化矽的選擇極少。
乾蝕刻製程對於選擇性地從半導體基板去除材料往 往是理想的。理想性源自於以最少的物理干擾從微型結構和緩地去除材料的能力。乾蝕刻製程也允許藉由去除氣相試劑來突然停止蝕刻速率。某些乾蝕刻製程涉及到使基板曝露於由一或更多個前驅物形成的遠端電漿副產物。例如，氨和三氟化氮的遠端電漿激發使得當電漿流出物流入基板處理區域時，氧化矽能夠被選擇性地從圖案化基板去除。遠端電漿蝕刻製程最近已被開發出可相對於彼此選擇性地去除各種介電質。然而，較少的乾蝕刻製程被開發來選擇性地去除金屬及/或金屬的氧化物。
需要有使用乾蝕刻製程來從金屬表面選擇性地蝕刻 氧化物層的方法。
茲描述一種蝕刻異質結構上曝露的氧化鈦的方法，該方法包括由含氟前驅物形成的遠端電漿蝕刻。使來自遠端電漿的電漿流出物流入基板處理區域，其中該電漿流出物可以與含氮前驅物結合，該含氮前驅物例如含胺(N：)前驅物。藉此產生的反應物會在基板處於高溫時以高的氧化鈦選擇性蝕刻圖案化的異質結構。或者，氧化鈦蝕刻可能涉及供應含氟前驅物及含-氮-和-氫前驅物的來源到遠端電漿。可以使用該方法來去除氧化鈦，同時去除極少的或未去除低介電常數(K)介電質、多晶矽、氮化矽或氮化鈦。
本發明的實施例包括在基板處理腔室的基板處理區 域中蝕刻基板的方法。該基板具有曝露的氧化鈦區域。該方法包括使含氟前驅物流入流體耦接至該基板處理區域的遠端電漿區域，同時在該遠端電漿區域中形成遠端電漿，以產生電漿流出物。該方法進一步包括使含-氮-和-氫前驅物流入該基板處理區域而不使該含-氮-和-氫前驅物先通過該遠端電漿區域。該方法進一步包括在該基板處理區域中使用該電漿流出物和該含-氮-和-氫前驅物的組合蝕刻該曝露的氧化鈦區域。
本發明的實施例包括在基板處理腔室的基板處理區 域中蝕刻基板的方法。該基板具有曝露的氧化鈦區域。該方法包括使氨和含氟前驅物流入流體耦接至該基板處理區域的遠端電漿區域，同時在該遠端電漿區域中形成遠端電漿，以產生電漿流出物。該方法進一步包括在該基板處理區域中使用該電漿流出物蝕刻該曝露的氧化鈦區域。
在以下的部分描述中提出另外的實施例與特徵，而 且對於本技術領域中具有通常知識者而言，在檢視本說明書之後，部分的該等實施例與特徵將變得顯而易見，或者是可藉由實施揭示的實施例而學習部分的該等實施例與特徵。藉由說明書中描述的手段、組合以及方法可實現及獲得揭示的實施例之特徵與優點。
110‧‧‧操作
120‧‧‧操作
125‧‧‧操作
130‧‧‧操作
135‧‧‧操作
145‧‧‧操作
210‧‧‧操作
220‧‧‧操作
225‧‧‧操作
230‧‧‧操作
235‧‧‧操作
245‧‧‧操作
1001‧‧‧基板處理腔室
1010‧‧‧遠端電漿系統
1011‧‧‧氣體入口組件
1012‧‧‧第一通道
1013‧‧‧第二通道
1020‧‧‧腔室電漿區域
1021‧‧‧蓋體
1024‧‧‧絕緣環
1026‧‧‧長度
1050‧‧‧通孔的最小直徑
1051‧‧‧中空容積
1053‧‧‧噴灑頭
1055‧‧‧小孔
1056‧‧‧通孔
1070‧‧‧基板處理區域
1101‧‧‧系統
1102‧‧‧FOUP
1104‧‧‧機器人手臂
1106‧‧‧低壓保持區域
1108a‧‧‧處理腔室
1108b‧‧‧處理腔室
1108c‧‧‧處理腔室
1108d‧‧‧處理腔室
1108e‧‧‧處理腔室
1108f‧‧‧處理腔室
1110‧‧‧第二機器人手臂
1155‧‧‧氣體處理系統
1157‧‧‧系統控制器
藉由參照本說明書的剩餘部分及圖式可以實現對揭示的實施例之本質與優點的進一步瞭解。
第1圖為依據所揭示實施例的氧化鈦選擇性蝕刻製 程之流程圖。
第2圖為依據所揭示實施例的氧化鈦選擇性蝕刻製程之流程圖。
第3A圖圖示依據本發明之實施例的基板處理腔室。
第3B圖圖示依據本發明之實施例的基板處理腔室之噴灑頭。
第4圖圖示依據本發明之實施例的基板處理系統。
在附圖中，相似的組件及/或特徵可以具有相同的參考標號。此外，相同類型的各個組件可以藉由在該參考標號之後接續破折號和第二標號來進行區分，該第二標號可以在類似的組件之間進行區分。假使只在說明書中使用第一參考標號，則該描述係適用於任何一個具有相同第一參考標號的類似組件，而與第二參考標號無關。
茲描述一種蝕刻異質結構上曝露的氧化鈦的方法，該方法包括由含氟前驅物形成的遠端電漿蝕刻。使來自遠端電漿的電漿流出物流入基板處理區域，其中該電漿流出物可以與含氮前驅物結合，該含氮前驅物例如含胺(N：)前驅物。藉此產生的反應物會在基板處於高溫時以高的氧化鈦選擇性蝕刻圖案化的異質結構。或者，氧化鈦蝕刻可能涉及供應含氟前驅物及含-氮-和-氫前驅物的來源到遠端電漿。可以使用該方法來去除氧化鈦，同時去除極少的或未去除低介電常數(K)介電質、多晶矽、氮化矽或氮化鈦。
為了更好地瞭解和理解本發明，現在參照第1圖， 第1圖為依據所揭示實施例的氧化鈦選擇性蝕刻製程之流程圖。在第一操作之前，基板被圖案化而留下了曝露的氧化鈦區域和可以被覆蓋的低K介電質區域。然後將圖案化的基板輸送進入基板處理區域(操作110)。使三氟化氮的流動開始進入與處理區域分開的電漿區域(操作120)。可以使用其他來源的氟來增加或取代三氟化氮。一般情況下，使含氟前驅物流入電漿區域，並且該含氟前驅物包含至少一選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。本文中可以將分離的電漿區域稱為遠端電漿區域，而且該分離的電漿區域可以在與處理腔室不同的模組內或在該處理腔室內的隔室內。然後使遠端電漿區域中形成的電漿流出物流入基板處理區域(操作125)。在此時間點，氣相蝕刻對於氧化鈦會有極低的選擇性，而且會具有有限的用途。然而，使含-氮-和-氫前驅物同時流入基板處理區域(操作130)以與電漿流出物反應。含-氮-和-氫前驅物未通過遠端電漿區域(或任何為此事件而在基板處理區域外部形成的電漿)，因此只被與電漿流出物的交互作用激發。
在揭示的實施例中，含-氮-和-氫前驅物的流動速率 可以在含氟前驅物的流動速率的0.5和約10倍之間。在本發明的實施例中，流動速率比(含-氮-和-氫前驅物：含氟前驅物)較佳可以在1：1和5：1之間或在2：1和3：1之間。在揭示的實施例中，可以使三氟化氮(或一般為含氟前驅物)以大於或約25sccm、大於或約40sccm、大於或約60sccm或是大於或約75sccm的速率流入遠端電漿區域。
圖案化基板被選擇性地蝕刻(操作135)，使得氧化 鈦被以明顯高於低K介電質的速率去除。反應性化學物種被從基板處理區域移除，然後從處理區域移出基板(操作145)。 使用本文所述的氣相乾蝕刻製程，發明人已經證實的是，超過40：1的蝕刻選擇率(氧化鈦蝕刻速率：低K介電質蝕刻速率)是有可能的。在本發明的實施例中，氧化鈦蝕刻速率比低K介電質蝕刻速率快約50倍或更多倍、快約100倍或更多倍、快約150倍或更多倍、快約200倍或更多倍或是快約300倍或更多倍。在揭示的實施例中，低K介電質材料可以具有小於3.5、小於3.3、小於3.1或是小於3.0的介電常數。低K介電質材料可以包含矽、碳、氧及氫或是由矽、碳、氧及氫所組成。
還發現的是，本文所述的氣相乾蝕刻可以提高氧化 鈦相對於矽(包括多晶矽)的蝕刻選擇性。使用本文所述的氣相乾蝕刻製程，本發明人已經證實了超過50：1(SiO蝕刻速率：Si蝕刻速率)的蝕刻選擇性是有可能的。在本發明的實施例中，氧化鈦蝕刻速率比(多晶)矽蝕刻速率快約50倍或更多倍、快約100倍或更多倍、快約150倍或更多倍、快約200倍或更多倍或是快約300倍或更多倍。
還發現的是，本文所述的氣相乾蝕刻可以提高氧化 鈦相對於氮化矽(或氮化鈦)的蝕刻選擇性。使用本文所述的氣相乾蝕刻製程，本發明人已經證實了超過50：1的TiO：SiN(或TiO：TiN)蝕刻選擇性是有可能的。在本發明的實施例中，氧化鈦蝕刻速率比氮化矽(或氮化鈦)蝕刻速率快約50 倍或更多倍、快約100倍或更多倍、快約150倍或更多倍、快約200倍或更多倍或是快約300倍或更多倍。
含-氮-和-氫前驅物可以由氮和氫所組成。在本發明 的實施例中，含-氮-和-氫前驅物可以包含胺基團，而且可以被指稱為含胺前驅物。胺基團係被定義為具有擁有孤對電子的氮(正規上標示為N：)。因此，含-氮-和-氫前驅物包括氨、甲基胺、乙基胺、二乙基胺、甲基乙基二胺及類似者。可以在遠端電漿區域中或在進入遠端電漿區域之前同時將含氫前驅物與含氟前驅物結合。
現在參照第2圖，第2圖為依據替代的揭示實施例 的氧化鈦選擇性蝕刻製程之流程圖。在第一操作之前，基板再次被圖案化而留下了曝露的氧化鈦區域和可以被曝露或可以不被曝露的低K介電質區域。然後將圖案化的基板輸送進入基板處理區域(操作210)。再次使三氟化氮的流動開始進入與處理區域分開的電漿區域(操作220)。可以再次使用替代來源的氟來增加或取代三氟化氮。分開的電漿區域可以如前被指稱為遠端電漿區域，而且該分開的電漿區域可以在與處理腔室不同的模組內或在該處理腔室內的隔室內。還使氨流入遠端電漿區域(操作225)。此製程與Siconi製程類似，不同之處僅在於本文中概述的曝露基板材料及一些製程參數偏差。然後使遠端電漿區域中形成的電漿流出物流入基板處理區域(操作230)。
圖案化基板被選擇性地蝕刻(操作235)，使得氧化 鈦被以明顯高於低K介電質的速率去除。反應性化學物種被 從基板處理區域移除，然後從處理區域移出基板(操作245)。 參照第1圖所概述的選擇性實施例和材料也適用於第2圖的製程。還發現的是，基板溫度和製程壓力落在相同的實施例內，將於稍後描述該實施例。另一方面，流動速率比可以改變如下。在揭示的實施例中，氨的流動速率可以在含氟前驅物的流動速率的1和約20倍之間。在本發明的實施例中，流動速率比(氨：含氟前驅物)較佳可以在1：1和10：1之間或在3：1和7：1之間。含氟前驅物的絕對流動速率落在較早實例的實施例內。
一些可能機制的討論可以證明是有效益的，但不希 望申請專利範圍的涵蓋面受到可能是或可能不是完全正確的 理論機制所限制。藉由輸送含氟前驅物進入遠端電漿區域來產生自由基-氟前驅物。申請人假設產生某濃度的氟離子及原子並將該等氟離子及原子輸入基板處理區域。電漿中的氨(NH3)或未激發的含胺前驅物可以與氟反應產生較無反應性的物種，例如進入基板處理區域的氫氟化銨(NH4HF2)。本文所述氫和氟的輸送允許(NH4)2TiF6固體副產物(鹽)在相對低的基板溫度(<70℃)下形成。發明人認為，在較高的基板溫度下，固體副產物仍會形成於曝露的氧化鈦(TiO)表面上，但同時可在蝕刻製程的過程中藉由保持相對高的基板溫度而將固體副產物去除，如本文所概述。藉由限制進入的化學物種之反應性，發明人已經發現一種去除氧化鈦同時保留圖案化基板表面上的矽、氮化鈦、低K介電質材料及氮化矽的方式。與缺乏固體副產物結合的選擇性使得這些蝕刻製程非常 適用於從精細的低K介電質材料上方去除氧化鈦結構，同時在剩餘的精細結構中引發極少的變形。
在揭示的實施例中，在本文所述的蝕刻製程過程中，基板的溫度可以為約110℃或更高及約400℃或更低。 在揭示的實施例中，基板的溫度可以高於或約70℃、高於或約90℃、高於或約110℃、高於或約130℃、高於或約150℃或是高於或約170℃。在揭示的實施例中，基板的溫度可以低於或約400℃、低於或約350℃、低於或約325℃或是低於或約300℃。任何上限可以與任何的這些下限組合，以形成本發明另外的實施例。在本發明的實施例中，在較佳的實施例中，在蝕刻操作過程中基板的溫度可以在200℃和300℃之間。
發明人已經發現的是，應將曝露的內部組件保持在高溫，以避免捕獲所需的蝕刻劑(假設包括氫氟化銨)。內部組件包括形成於任一結構中與蝕刻劑接觸的表面(參見第1-2圖及相關的討論)。可能的內部組件將在示例性的設備部分中更加詳細地討論，但可以包括將基板處理區域與遠端電漿區域分開的噴灑頭。內部組件可以包括腔室壁、面板及專用的離子抑制元件。在揭示的實施例中，在蝕刻操作過程中可以將內部組件保持在高於或約70℃、高於或約90℃、高於或約110℃或是高於或約130℃。已經確定的是，將高溫保持在例如130℃和170℃之間可藉由確保適當的中性活性蝕刻物種流到氧化鈦基板表面來提高基板的蝕刻速率。
遠端電漿區域中可以包括專用的離子抑制元件，以 進一步控制進入基板處理區域的離子密度。降低離子濃度據信能夠實現稍早概述的高氧化鈦選擇率。離子抑制元件的功能是減少或消除從電漿產生區域移動到基板的離子帶電物種。不帶電的中性和自由基物種可以通過離子抑制器中的開口而在基板反應。
在揭示的實施例中，在蝕刻操作過程中基板處理區域中的壓力可以高於或約0.1托並且小於或約50托。在揭示的實施例中，壓力可以高於或約0.1托、高於或約0.2托、高於或約0.5托、或是高於或約1托。在揭示的實施例中，壓力可以低於或約50托、低於或約25托、低於或約15托或是低於或約10托。任何上限可以與任何的這些下限組合，以形成本發明另外的實施例。另外的氧化鈦選擇性蝕刻製程參數係揭示於描述示例性處理腔室和系統的過程中。
示例性處理系統
可以實施本發明之實施例的處理腔室可以被包括在處理平台內，該處理平台例如CENTURA®和PRODUCER®系統，皆可向美國加州聖克拉拉市的應用材料公司(Applied Materials,Inc.of Santa Clara,Calif.)取得。可以與本發明的示例性方法一起使用的基板處理腔室之實例可以包括在2006年05月30日提出申請、標題為「用於介電質間隙填充的處理腔室(PROCESS CHAMBER FOR DIELECTRIC GAPFILL)」且共同受讓給Lubomirsky等人的美國臨時專利申請案第60/803,499號中所圖示和描述者，為了所有的目的將該專利申請案之全部內容以引用方式併入本文中。另外的示例性系統 可以包括美國專利第6,387,207號和第6,830,624號中所圖示和描述者，為了所有的目的將該等專利以引用方式併入本文中。
第3A圖為依據所揭示實施例的基板處理腔室1001。遠端電漿系統(RPS 1010)可以處理含氟前驅物，然後該含氟前驅物經由氣體入口組件1011前進。可以在氣體入口組件1011內看到兩個截然不同的氣體供應通道。第一通道1012攜帶通過遠端電漿系統RPS 1010的氣體，而第二通道1013繞過RPS 1010。在實施例中可以將任一個通道使用於含氟前驅物。另一方面，第一通道1012可用於製程氣體，並且第二通道1013可用於處理氣體。圖示蓋體1021(例如導電頂部)和穿孔的分隔板(噴灑頭1053)之間具有絕緣環1024，絕緣環1024使得AC電勢可被相對於噴灑頭1053施加到蓋體1021。AC電勢在腔室電漿區域1020中擊發電漿。製程氣體經由第一通道1012進入腔室電漿區域1020，並且製程氣體可以在單獨的或與RPS 1010組合的腔室電漿區域1020中被電漿激發。假使製程氣體(含氟前驅物)流經第二通道1013，則只有腔室電漿區域1020用於激發。本文中可以將腔室電漿區域1020及/或RPS 1010的組合稱為遠端電漿系統。穿孔的分隔板(也可稱為噴灑頭)1053將腔室電漿區域1020與噴灑頭1053下方的基板處理區域1070分隔。噴灑頭1053允許電漿存在於腔室電漿區域1020中，以避免在基板處理區域1070中直接激發氣體，同時還允許激發的物種從腔室電漿區域1020進入基板處理區域1070。
噴灑頭1053被定位在腔室電漿區域1020和基板處理區域1070之間，並允許RPS 1010及/或腔室電漿區域1020內產生的電漿流出物(前驅物或其他氣體的激發衍生物)通過複數個通孔1056，通孔1056穿過板材的厚度。噴灑頭1053還具有一或更多個中空容積1051，中空容積1051可以被蒸氣或氣體形式的前驅物(例如含胺前驅物)填滿，並通過小孔1055進入基板處理區域1070，但不是直接進入腔室電漿區域1020。在此揭示的實施例中，噴灑頭1053的厚度比通孔1056的最小直徑1050之長度更長。為了保持顯著濃度的激發物種從腔室電漿區域1020滲透到基板處理區域1070，可以藉由形成部分貫穿噴灑頭1053的通孔1056之較大直徑部分來限制通孔的最小直徑1050之長度1026。在揭示的實施例中，通孔1056的最小直徑1050之長度可以與通孔1056的最小直徑屬於相同數量級或更短。以此方式，可以使含氟前驅物流經雙區噴灑頭中的通孔1056，並且含-氮-和-氫前驅物可以通過雙區噴灑頭中的獨立區域(中空容積1051)，其中該獨立區域開放進入基板處理區域但不進入遠端電漿區域。
如第3A圖所圖示，可以設置噴灑頭1053來提供離子抑制器的效用。或者，可以包括分離的處理腔室元件(未圖示)，該處理腔室元件抑制流入基板處理區域1070的離子濃度。蓋體1021和噴灑頭1053可以分別發揮作為第一電極和第二電極的功能，所以蓋體1021和噴灑頭1053可以接收不同的電壓。在這些架構中，可以將電功率(例如RF功率)施加於蓋體1021、噴灑頭1053或上述兩者。例如，可以將電 功率施加於蓋體1021，同時將噴灑頭1053(作為離子抑制器)接地。基板處理系統可以包括RF產生器，RF產生器提供電功率到蓋體及/或噴灑頭1053。施加於蓋體1021的電壓可以促進腔室電漿區域1020內有均勻分佈的電漿(例如減少局部化電漿)。為了能夠在腔室電漿區域1020中形成電漿，絕緣環1024可以將蓋體1021與噴灑頭1053電絕緣。絕緣環1024可以由陶瓷製作並且可以具有高的崩潰電壓，以避免放電。 方才所述靠近電容耦合電漿組件的部分基板處理腔室1001可以進一步包括冷卻單元(未圖示)，該冷卻單元包括一或更多個冷卻流體通道，以使用循環冷卻劑(例如水)冷卻曝露於電漿的表面。
在圖示的實施例中，噴灑頭1053可以(經由通孔1056)分配製程氣體，該製程氣體含有氧、氫及/或氮及/或該製程氣體在腔室電漿區域1020中被電漿激發之後的電漿流出物。在實施例中，經由第一通道1012被引入RPS 1010及/或腔室電漿區域1020的製程氣體可以含有氟(例如CF4、NF3或XeF2)。該製程氣體還可以包括載送氣體，例如氦氣、氬氣、氮氣(N2)等。電漿流出物可以包括製程氣體的離子化或中性衍生物，而且本文中還可以將電漿流出物稱為自由基-氟前驅物，以指稱引入的製程氣體之原子組份。
通孔1056設以抑制離子化帶電物種遷移出腔室電漿區域1020，同時允許未帶電的中性或自由基物種通過噴灑頭1053進入基板處理區域1070。這些未帶電的物種可以包括高度反應性物種，該等高度反應性物種被以反應性較低的載 送氣體經由通孔1056輸送。如以上所注意的，可以減少離子物種經由通孔1056的遷移，而且在一些例子中可以完全抑制離子物種經由通孔1056遷移。控制離子物種通過噴灑頭1053的量對於被帶入而與下方的晶圓基板接觸的氣體混合物提供了增加的控制，進而增加了對於氣體混合物之沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可以明顯改變氣體混合物的蝕刻選擇性(例如TiO：低K介電質的蝕刻比)。
在實施例中，通孔1056的數量可以在約60和約2000之間。通孔1056可以具有各種不同的形狀，但最容易製作成圓形。在揭示的實施例中，通孔1056的最小直徑1050可以在約0.5mm和約20mm之間，或在約1mm和約6mm之間。 在選擇通孔的橫截面形狀上也有緯度之分，該橫截面形狀可以是圓錐形、圓柱形或上述兩種形狀之組合。在不同的實施例中，用於將氣體導入基板處理區域1070的小孔1055之數量可以在約100和約5000之間，或在約500和約2000之間。 小孔1055的直徑可以在約0.1mm和約2mm之間。
第3B圖為依據揭示的實施例用於處理腔室的噴灑頭1053之仰視圖。噴灑頭1053與第3A圖中圖示的噴灑頭一致。描繪的通孔1056在噴灑頭1053的底部具有較大的內徑(ID)，而且在噴灑頭1053頂部具有較小的內徑。小孔1055大致上均勻地分佈在噴灑頭的表面上，即使在通孔1056之間亦然，這有助於提供比本文所述的其他實施例更均勻的混合。
當經由噴灑頭1053中的通孔1056到達的含氟電漿 流出物與源自中空容積1051通過小孔1055到達的氨結合時，示例性的圖案化基板可以由基座(未圖示)支撐在基板處理區域1070內。雖然可以在基板處理區域1070裝設支援用於其他製程(例如固化)的電漿之配備，但在本發明的實施例中，在圖案化基板的蝕刻過程中並無電漿存在。
電漿可以在噴灑頭1053上方的腔室電漿區域1020中或噴灑頭1053下方的基板處理區域1070中被點燃。腔室電漿區域1020中存在電漿，以從含氟前驅物的進入流產生自由基-氟前驅物。在處理腔室的導電性頂部1021和噴灑頭1053之間施加通常在射頻(RF)範圍中的交流電壓，以在沉積過程中在腔室電漿區域1020中點燃電漿。RF電源產生13.56MHz的高射頻頻率，但也可能會產生單獨的其他頻率或與13.56MHz頻率結合的其他頻率。
當開啟基板處理區域1070中的底部電漿以固化薄膜或清洗鄰接基板處理區域1070的內表面時，可以使頂部電漿停留在很低或無功率下。藉由在噴灑頭1053和基座或腔室底部之間施加交流電壓來點燃基板處理區域1070中的電漿。 可以在電漿存在的同時將清洗氣體引入基板處理區域1070。
基座可以具有熱交換通道，熱交換流體經由該熱交換通道流入，以控制基板的溫度。這種架構允許基板溫度被冷卻或加熱，以保持相對低溫(從室溫到約120℃)。熱交換流體可以包含乙二醇和水。可以使用以平行同心圓形式配置成兩個圈的嵌入式單迴路嵌入式加熱器元件來電阻式加熱基座的晶圓支撐盤(較佳為鋁、陶瓷或上述物質之組合)，以實 現相對高溫(約120℃至約1100℃)。加熱器元件的外部可以與支撐盤的周邊相鄰，而加熱器元件的內部係沿著具有較小外徑的同心圓路徑。接到加熱器元件的接線通過基座的底桿。
基板處理系統係由系統控制器所控制。在示例性的實施例中，該系統控制器包括硬碟磁碟機、軟碟磁碟機及處理器。該處理器包含單板電腦(SBC)、類比和數位輸入/輸出板、介面板及步進馬達控制器板。CVD系統的各種部件符合Versa模件歐洲(Versa Modular European,VME)標準，VME標準定義板、卡片機架以及連接器的尺寸和類型。VME標準還定義具有16位元數據匯流排和24位元定址匯流排的匯流排結構。
系統控制器控制蝕刻腔室的所有活動。該系統控制器執行系統控制軟體，該系統控制軟體為儲存在電腦可讀媒體中的電腦程式。較佳地，該媒體為硬碟磁碟機，但該媒體也可以是其他種類的記憶體。該電腦程式包括指令組，該指令組指示時間、氣體混合物、腔室壓力、腔室溫度、RF功率水平、基座位置以及其他特定製程的參數。也可以使用其他儲存在其他記憶體裝置(包括例如軟碟或其他適當的磁碟機)的電腦程式來指示系統控制器。
可以使用由系統控制器執行的電腦程式產品來實施在基板上沉積薄膜堆疊的製程或用於清洗腔室的製程。可以用任何現有的電腦可讀程式語言來撰寫電腦程式譯碼：例如68000組合語言、C、C++、Pascal、Fortran或其他的電腦可 讀程式語言。使用現有的文本編輯器將適當的程式譯碼輸入單一檔案或多個檔案中，並儲存或體現於電腦可用媒體中，例如電腦的記憶體系統。假使輸入的譯碼內文屬於高階語言，則編譯該譯碼，然後將產生的編譯譯碼與預編譯的微軟視窗®(Microsoft Windows®)程式館常式之目標譯碼聯結。 為了執行該經聯結、編譯的目標譯碼，系統使用者喚起目標譯碼，致使電腦系統載入記憶體中的譯碼。然後CPU讀取並執行譯碼，以進行程式中確認的任務。
使用者與控制器之間的介面係經由平板觸摸感應式監視器。在較佳的實施例中使用二個監視器，一個組裝於潔淨室牆壁上供操作員使用，而另一個組裝於牆壁外面供服務技師使用。該二個監視器可同時顯示相同的資訊，在任一情況中在同一時間只有一個監視器接受輸入。為了要選擇特殊的畫面或功能，操作員可觸碰觸摸感應式監視器的指定區域。經觸碰的區域會改變其彰顯的顏色，或者會顯示出新的選單或畫面，以確認操作員與觸摸感應式監視器之間的溝通。可以使用其他的裝置(如鍵盤、滑鼠或其他的指向或溝通裝置)來取代該觸摸感應式監視器，或是除了該觸摸感應式監視器之外可同時使用該等其他的裝置，以容許使用者與系統控制器溝通。
可以將腔室電漿區域或遠端電漿系統中的區域稱為遠端電漿區域。在實施例中，自由基前驅物(例如自由基-氟前驅物)係形成於遠端電漿區域中並進入基板處理區域，以與含胺前驅物結合。在實施例中，含胺前驅物只被自由基-氟 前驅物激發。在實施例中，基本上可以將電漿功率僅施加於遠端電漿區域，以確保自由基-氟前驅物對含胺前驅物(例如氨)提供主要的激發。
在採用腔室電漿區域的實施例中，該激發的電漿流出物係於基板處理區域的分區中產生，該基板處理區域係從沉積區域分割出。沉積區域(本文中亦已知為基板處理區域)是電漿流出物與含胺前驅物混合和反應以蝕刻圖案化基板(例如半導體晶圓)之處。該激發的電漿流出物還可以伴隨有惰性氣體(在示例性案例中為氬氣)。在實施例中，含胺前驅物在進入基板電漿區域之前不通過電漿。在圖案化基板的蝕刻過程中，本文可以將基板處理區域描述為「無電漿」的。 「無電漿」並不一定意指該區域是沒有電漿的。電漿區域內產生的離子化物種和自由電子確實會通過隔板(噴灑頭)中的細孔(縫隙)，但含胺前驅物實質上未被施加到電漿區域的電漿功率激發。在腔室電漿區域中，電漿的邊界是很難界定的，並且可能會經由噴灑頭中的孔侵入基板處理區域。在感應耦合電漿的情況中，可能會在該基板處理區域內直接激起少量的離子化。此外，可以在該基板處理區域中形成低強度的電漿，而不損害形成的薄膜之理想特徵。在激發的電漿流出物的形成過程中，所有離子密度遠比腔室電漿區域(或對於該事件為遠端電漿區域)低的電漿之起因皆未偏離本文所用的「無電漿」之範圍。
在不同的實施例中，可以使三氟化氮(或另一個含氟前驅物)以約25sccm和約200sccm之間、約50sccm和 約150sccm之間或約75sccm和約125sccm之間的速率流入腔室電漿區域1020。在不同的實施例中，可以使含胺前驅物以約25sccm和約200sccm之間、約50sccm和約150sccm之間或約75sccm和約125sccm之間的速率流入基板處理區域1070。
進入腔室的含胺前驅物和含氟前驅物之結合流動速率可以佔整體氣體混合物的0.05%至約20%體積；其餘的是載送氣體。在實施例中使含氟前驅物流入遠端電漿區域，但電漿流出物具有相同的體積流量比。在含氟前驅物的案例中，在該等含氟氣體穩定遠端電漿區域內的壓力之前可以先使吹洗或載送氣體進入遠端電漿區域。
電漿功率可以有各種的頻率或多種頻率的組合。在示例性的處理系統中，電漿係由被相對於噴灑頭1053輸送到蓋體1021的RF功率提供。在不同的實施例中，RF功率可以在約10瓦和約2000瓦之間、約100瓦和約2000瓦之間、約200瓦和約1500瓦之間或約500瓦和約1000瓦之間。在不同的實施例中，該示例性的處理系統中施加的RF頻率可以是小於約200kHz的低RF頻率、在約10MHz和約15MHz之間的高RF頻率或大於或約1GHz的微波頻率。電漿功率可以被電容耦合(CCP)或感應耦合(ICP)進入遠端電漿區域。
在含胺前驅物、任何載送氣體和電漿流出物流入基板處理區域1070的過程中，可以將基板處理區域1070保持在各種壓力下。在不同的實施例中，可以將該壓力保持在約500毫托和約30托之間、約1托和約20托之間或約5托和約 15托之間。
在一或更多個實施例中，可以將基板處理腔室1001整合於各種多處理平台中，該等多處理平台包括可向美國加州聖克拉拉市的應用材料公司取得的ProducerTM GT、CenturaTM AP及EnduraTM平台。這樣的處理平台能夠執行幾種處理操作而不會破真空。可以實施本發明之實施例的處理腔室除了其他類型的腔室之外還可以包括介電質蝕刻腔室或各種化學氣相沉積腔室。
可以將沉積系統的實施例結合到更大的製造系統中，以生產積體電路晶片。第4圖圖示依據所揭示實施例的一個這樣的沉積、烘烤及固化腔室系統1101。在該圖中，一對FOUP(前開式晶圓傳送盒)1102供應基材基板(例如直徑300毫米(mm)的晶圓)，該基板由機器人手臂1104接收，並在被放入其中一個基板處理腔室1108a-f之前被放入低壓保持區域1106。可以使用第二機器人手臂1110來在保持區域1106和基板處理腔室1108a-f之間來回運送基板晶圓。可以整體配備每個基板處理腔室1108a-f，以進行數種基板處理操作，除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清洗、除氣、定向及其他的基板製程之外，該基板處理操作還包括本文所述的乾蝕刻製程。
基板處理腔室1108a-f可以包括一或更多個系統組件，用於沉積、退火、固化及/或蝕刻基板晶圓上的流動性介電質薄膜。在一個架構中，可以使用兩對處理腔室(例如 1108c-d和1108e-f)來在基板上沉積介電質材料，並且可以使用第三對處理腔室(例如1108a-b)蝕刻沉積的介電質。在另一個架構中，可以配置全部的三對腔室(例如1108a-f)來在基板上蝕刻介電質薄膜。可以在與不同的實施例中所圖示的製造系統分離的腔室中進行所描述的任一或多種製程。
使用系統控制器1157來控制馬達、閥、流量控制器、電源及進行本文所述製程流程所需的其他功能。也可以藉由系統控制器1157來控制氣體處理系統1155，以將氣體引入一個或全部的基板處理腔室1108a-f。系統控制器1157可以依賴光感測器的反饋來決定並調整可移動機械組件在氣體處理系統1155及/或基板處理腔室1108a-f中的位置。機械組件可以包括在系統控制器1157的控制下由馬達移動的機器人手臂、節流閥及基座。
在示例性的實施例中，系統控制器1157包括硬碟磁碟機(記憶體)、USB接口、軟碟磁碟機及處理器。系統控制器1157包括類比和數位輸入/輸出板、介面板及步進馬達控制器板。含有處理腔室1001的多腔室處理系統1101之各種部件係受到系統控制器1157的控制。該系統控制器執行系統控制軟體，該系統控制軟體的形式為儲存在電腦可讀媒體中的電腦程式，該電腦可讀媒體例如硬碟、軟碟或快閃記憶體拇指磁碟機。也可以使用其他類型的記憶體。該電腦程式包括指令組，該指令組指示時間、氣體混合物、腔室壓力、腔室溫度、RF功率水平、基座位置以及其他特定製程的參數。
本文中使用的「基板」可為支撐基板，該支撐基板 上可有或無層形成。圖案化基板可以是絕緣體或具有各種摻雜濃度與分佈的半導體，而且例如該圖案化基板可以是半導體基板，該半導體基板的類型與製造積體電路中所使用的半導體基板類型相同。該圖案化基板的曝露「氧化鈦」主要是TiO2，但可以包括其他元素組分的濃度，例如氮、氫、碳及類似者。在一些實施例中，使用本文所述方法蝕刻的氧化鈦薄膜主要由鈦和氧組成。該圖案化基板的曝露「氧化矽」主要是SiO2，但可以包括其他元素組分的濃度，例如氮、氫、碳及類似者。在一些實施例中，使用本文所述方法蝕刻的氧化矽薄膜主要由矽和氧組成。用語「前驅物」係用以指稱任何製程氣體，該製程氣體參與反應，以從表面去除材料或沉積材料於基板上。「電漿流出物」描述從腔室電漿區域離開並進入基板處理區域的氣體。電漿流出物係處於「激發態」，其中至少某些氣體分子處於振動激發、離解及/或離子化狀態。 「自由基前驅物」係用於描述電漿流出物(處於激發態且激發電漿的氣體)，該電漿流出物參與反應，以從表面去除材料或沉積材料於基板上。「自由基氟前驅物」為含有氟但還可以含有其他元素組份的自由基前驅物。片語「惰性氣體」係指任何當蝕刻或被併入薄膜中時不會形成化學鍵結的氣體。示例性的惰性氣體包括鈍氣，但也可以包括其他氣體，只要當微量(典型上)陷入薄膜中時無化學鍵結形成即可。
貫穿全文使用用語「縫隙」和「溝槽」，但並非暗示蝕刻出的幾何形狀具有大的水平深寬比。從表面上方觀看，溝槽可能會呈現圓形、橢圓形、多邊形、矩形或各式各樣的 其他形狀。溝槽可以處於圍繞材料島嶼的護城河形狀(例如大致上圓柱形的TiN形)。用語「通孔」是用來指稱低深寬比的溝槽(從上方觀看)，該溝槽可能會或可能不會被填充金屬來形成垂直的電連線。如本文中所使用的，保角蝕刻製程係指表面上以與該表面相同的形狀大致均勻地去除材料，亦即被蝕刻層的表面與預先蝕刻的表面大體上是平行的。在本技術領域中具有通常知識之人士將理解到，所蝕刻的界面可能無法100%保角，因此，用語「大體上」容許可接受的誤差。
有了揭示的幾個實施例，在本技術領域中具有通常知識者將理解到，可以在不偏離本發明之精神下使用各種修改、替代結構以及均等物。此外，並未描述數個習知的製程及元件，以避免不必要地混淆本發明。因此，不應將以上描述視為限制本發明之範圍。
當提供數值的範圍時，應瞭解到，除非內文以其他方式清楚指明，否則在該範圍的上限與下限之間、每個到下限單位的十分之一之中間值亦為具體揭示的。在陳述範圍中的任何陳述值或中間值與該陳述範圍中的任何其他陳述值或中間值之間的每個較小範圍亦被涵括。該等較小範圍的上限與下限可獨立地被包括或排除於該範圍中，而且不論是該等較小範圍包括任一限值、不包括二限值或是包括二限值，該等較小範圍中的每個範圍亦被涵括於本發明中，取決於該陳述範圍中任何經具體排除的限值。當該陳述範圍包括該等限值中之一者或二者時，排除該等包括的限值中之任一者或二者的範圍亦被包括。
除非內文以其他方式清楚指明，否則本文中與所附申請專利範圍中使用的單數形「一」及「該」包括複數的指示對象。因此，舉例來說，提及「一製程」係包括複數個該種製程，而提及「該介電質材料」係包括提及一或更多個介電質材料及其為本技術領域中具有通常知識者所習知的均等物，以此類推。
同樣地，當用於本說明書中及以下申請專利範圍中時，字眼「包含」與「包括」意欲指明陳述的特徵、整數、成分或步驟之存在，但該等字眼並不排除一或更多個其他的特徵、整數、成分、步驟、動作或基團的存在或加入。
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Claims (20)

  1. 一種在一基板處理腔室的一基板處理區域中蝕刻一基板的方法，其中該基板具有一曝露的氧化鈦區域，該方法包含以下步驟：使一含氟前驅物流入一流體耦接至該基板處理區域的遠端電漿區域，同時在該遠端電漿區域中形成一遠端電漿，以產生電漿流出物；使一含-氮-和-氫前驅物流入該基板處理區域而不使該含-氮-和-氫前驅物先通過該遠端電漿區域；以及在該基板處理區域中使用該電漿流出物和該含-氮-和-氫前驅物的組合蝕刻該曝露的氧化鈦區域。
  2. 如請求項1所述之方法，其中圖案化的基板進一步包含一第二曝露區域，該第二曝露區域係選自於由一曝露的低介電常數(K)介電質區域、一曝露的矽區域、一曝露的氮化鈦區域或一曝露的氮化矽區域所組成之群組，並且該蝕刻操作的選擇率(曝露的氧化鈦區域：第二曝露區域)大於或約為50：1。
  3. 如請求項1所述之方法，其中該含-氮-和-氫前驅物包含一含胺前驅物。
  4. 如請求項1所述之方法，其中該含-氮-和-氫前驅物包含氨。
  5. 如請求項1所述之方法，其中在蝕刻該曝露的氧化鈦區域時該基板處理區域係無電漿。
  6. 如請求項1所述之方法，其中該含-氮-和-氫前驅物未被任何在該基板處理區域外部形成的遠端電漿激發。
  7. 如請求項1所述之方法，其中該含氟前驅物包含一選自於由原子氟、雙原子氟、三氟化氮、氟化氫及二氟化氙所組成之群組的前驅物。
  8. 如請求項1所述之方法，其中使該含氟前驅物流入該遠端電漿區域的操作進一步包含使一含氫前驅物流入該遠端電漿區域。
  9. 如請求項1所述之方法，其中該含氟前驅物流經一雙區噴灑頭中的通孔，並且該含-氮-和-氫前驅物通過該雙區噴灑頭中的獨立區域，其中該獨立區域開放進入該基板處理區域但不進入該遠端電漿區域。
  10. 如請求項1所述之方法，其中在該蝕刻操作過程中，圖案化基板的溫度高於或約為70℃並低於或約為400℃。
  11. 如請求項1所述之方法，其中在該蝕刻操作過程中，圖 案化基板的溫度高於或約為150℃並低於或約為350℃。
  12. 一種在一基板處理腔室的一基板處理區域中蝕刻一基板的方法，其中該基板具有一曝露的氧化鈦區域，該方法包含以下步驟：使氨和一含氟前驅物流入一流體耦接至該基板處理區域的遠端電漿區域，同時在該遠端電漿區域中形成一遠端電漿，以產生電漿流出物；以及在該基板處理區域中使用該電漿流出物蝕刻該曝露的氧化鈦區域。
  13. 如請求項12所述之方法，其中圖案化的基板進一步包含一第二曝露區域，該第二曝露區域係選自於由一曝露的低K介電質區域、一曝露的矽區域、一曝露的氮化鈦區域或一曝露的氮化矽區域所組成之群組，並且該蝕刻操作的選擇率(曝露的氧化鈦區域：第二曝露區域)大於或約為50：1。
  14. 如請求項12所述之方法，其中在蝕刻該曝露的氧化鈦區域時該基板處理區域係無電漿。
  15. 如請求項12所述之方法，其中該含-氮-和-氫前驅物未被任何在該基板處理區域外部形成的遠端電漿激發。
  16. 如請求項12所述之方法，其中該含氟前驅物包含一選自 於由原子氟、雙原子氟、三氟化氮、氟化氫及二氟化氙所組成之群組的前驅物。
  17. 如請求項12所述之方法，其中使該含氟前驅物流入該遠端電漿區域的操作進一步包含使一含氫前驅物流入該遠端電漿區域。
  18. 如請求項12所述之方法，其中該含氟前驅物流經一雙區噴灑頭中的通孔，並且該含-氮-和-氫前驅物通過該雙區噴灑頭中的獨立區域，其中該獨立區域開放進入該基板處理區域但不進入該遠端電漿區域。
  19. 如請求項12所述之方法，其中在該蝕刻操作過程中，圖案化基板的溫度高於或約為70℃並低於或約為400℃。
  20. 如請求項12所述之方法，其中在該蝕刻操作過程中，圖案化基板的溫度高於或約為150℃並低於或約為350℃。
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US20140166617A1 (en) 2014-06-19
US9111877B2 (en) 2015-08-18
US20150357201A1 (en) 2015-12-10
TWI606511B (zh) 2017-11-21
WO2014099205A1 (en) 2014-06-26

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