KR100698964B1 - 고효율 전자발광 디바이스를 위한 구조 - Google Patents

고효율 전자발광 디바이스를 위한 구조 Download PDF

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KR100698964B1
KR100698964B1 KR1020017003267A KR20017003267A KR100698964B1 KR 100698964 B1 KR100698964 B1 KR 100698964B1 KR 1020017003267 A KR1020017003267 A KR 1020017003267A KR 20017003267 A KR20017003267 A KR 20017003267A KR 100698964 B1 KR100698964 B1 KR 100698964B1
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마크에이. 발도
다이어뮈드 에프 오'브라이언
스테판알. 포레스트
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더 트러스티즈 오브 프린스턴 유니버시티
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
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    • Y10S428/917—Electroluminescent

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Abstract

본 발명은 실질적으로 투명한 양극(111), 상기 양극 상의 정공 이송층(112), 상기 정공 이송층 상의 방사층(113), 상기 방사층 상의 블로킹 층(114), 상기 블로킹 층상의 전자 이송층(115) 및 상기 전자 이송층과 전기적으로 접촉하는 음극(117)을 가지는 픽셀을 포함하는 광 방사 디바이스(100)에 관한 것이다.

Description

고효율 전자발광 디바이스를 위한 구조{STRUCTURE FOR HIGH EFFICIENCY ELECTROLUMINESCENT DEVICE}
본 발명은 스택 전자발광 디바이스에 관한 것이며, 보다 상세하게는 효율을 향상시키기 위해 여기자 블로킹 층들을 사용하는 스택 전자발광 디바이스들에 관한 것이다.
전류에 의해 여기될 때 광을 방사하는 박막 물질을 사용하는 유기 발광 디바이스(OLEDs)들은 점점 더 평판 디스플레이 기술의 범용화된 형태가 되었다. OLED구성의 최근 주요 3가지 형태는, "이중 헤테로구조" (DH) OLED, "단일 헤테로구조" (SH) OLED, 및 단일 층 폴리머 OLED가 있다. DH OLED에 있어, 도1A에 도시되어 있는 바와 같이, 투명 기판(10)이 양극 층(11)으로 코팅되어 있다. 얇은(100-500Å) 유기 홀 이송층(HTL)(12)은 양극(11)상에 증착되어 있다. 얇은(통상적으로 50Å-500Å) 방사층(EL)(13)이 HTL(12)의 표면상에 증착되어 있다. EL(13)은 100-500Å 두께 전자 이송층(ETL)(14)으로부터 주입된 전자와 HTL(12)로부터의 정공에 대한 재결합 부위를 제공한다. 선행 기술의 ETL, EL 및 HTL 물질들의 실예는 참고로 본문에 인용되는 미국특허 제5,294,870호에 개시되어 있다.
도1A에 도시되어 있는 디바이스는 금속 접촉부(15,16) 및 상단부 전극(17)의 증착에 의해 완성된다. 접촉부(15,16)들은 통상적으로 인듐 또는 Ti/Pt/Au로 제조된다. 전극(17)은 종종 유기 ETL(14)을 직접 접촉시키는 Mg/Ag(17') 같은 합금 및 상기 Mg/Ag 상의 금(Au) 또는 은(Ag) 같은 불투명, 고 일함수 금속층(17")으로 이루어진 이중 층 구조이다. 적절한 바이어스 전압이 상단 전극(17)과 접촉부(15,16)들 사이에 인가될 때, 광 방사는 기판(10)을 통해 방사 층(13)으로부터 발생한다.
도1B에 도시된 바와 같이, SH OLED는 EL 및 ETL 둘 모두로 작동하도록 다기능 층(13')을 사용한다. 도1B의 디바이스의 한가지 제한점은 다기능층(13')이 우수한 전자 이송 능력을 가져한 한다는 것이다. 그렇지 않으면, 분리 EL 및 ETL 층들이 도1A의 디바이스에 대해 도시된 바와 같이 포함되어야 한다.
싱글 층 폴리머 OLED가 도1C에 도시되어 있다. 도시된 바와 같이, 이런 디바이스는 양극 층(3)에 의해 코팅된 유리 기판(1)을 포함한다. 실예로, 스핀-코팅된 폴리머의 얇은 유기층(5)은 양극 층(3)상에 형성되고 상기 디바이스들의 HTL, ETL 및 EL 층들의 모든 기능을 제공한다. 금속 전극 층(6)은 유기층(5)상에 형성되어 있다. 금속은 Mg 또는 다른 통상적으로 사용되는 저 작업능 금속이다.
OLED들로부터의 광 방사는 통상적으로 형광(fluorescence) 또는 인광(phosphorescence)을 매개로 한다. 인광의 성공적인 사용은 유기 전자발광 디바이스에 대한 커다란 가능성을 갖는다. 예를 들면, 인광의 장점은 인광 디바이스들에서 트리플릿-계열(triplet-based)인, (EL의 정공 및 전자들의 재결합에 의해 형성된) 모든 여기자들이 특정 전자발광 물질들내 에너지 전달 및 발광에 참여할 수 있다. 대조적으로, 단일릿-계열(singlet-based)인, 형광 디바이스들의 작은 비율의 여기자들만이 형광 발광을 초래한다.
그러나, 형광 디바이스들과 대조적으로, 인광 디바이스들은 유효한 전자발광을 발생시키기 위해 극복되어야만할 몇 전위 장애를 가진다. 예를 들면, 긴 범위의 다이폴-다이폴 커플링(포스터 전달(Forster transfer))이 스핀 유지에 의해 금지되는 것처럼, 에너지 전달은 비교적 느리다. 효율은 또한 전류 밀도, 방사 부위의 포화를 초래하는 긴 인광 생존시간 및 트리플릿-트리플릿 소멸과 함께 빨리 감소된다. 게다가, 트리플릿 확산 길이는 통상적인 약 200Å 길이의 단일릿 확산 길이와 비교하여 통상적으로 길다(실예로, > 1400Å). 그러므로, 인광 디바이스들이 이들의 전위에 도달하려면, 디바이스 구조는 트리플릿 특성에 대해 최적화될 필요가 있다.
발명의 요약
본 발명은 실질적으로 투명한 양극; 상기 양극상의 정공 이송층; 상기 정공 이송층상의 방사층; 상기 방사층상의 블로킹층; 상기 블로킹층상의 전자이송층; 및 상기 전자 이송층과 전기적으로 접촉하는 음극을 포함하는 광 방사 디바이스를 포함한다.
본 발명의 디바이스들에 사용된 블로킹 층은 실질적으로 여기자의 확산을 블로킹하여, 디바이스 효율을 향상시키도록 실질적으로 방사층 내의 여기자들을 유지한다.
본 발명의 장점은 향상된 전자발광 유기 광 방사 디바이스를 제공하는 것이 다.
본 발명의 다른 장점은 실현가능하고 효율적인 인광 전자 발광 디바이스들을 제공하는 것이다.
정의
본문에 사용된 바와 같이, 하기의 문구 및 용어들은 이하의 의미를 가진다.
"Alq3"는 알루미늄 트리(8-하이드록시퀴놀라인)을 칭한다.
"양극"은 음으로 충전된 음극으로부터 유동하는 전자들의 양으로 충전된 전자의 리시버를 칭한다.
"밴드 갭"은 물질의 최하위 비점유 분자 궤도와 그 최상위 점유 분자 궤도 사이의 에너지 레벨 차이를 칭한다.
"BCP"는 bathocuproine을 칭한다.
"블로킹 층"은 여기자의 확산을 실질적으로 블로킹하는 물질을 포함하는 층을 칭한다.
"음극"은 양으로 충전된 양극으로 유동하는, 전자들을 방출시키는 음으로 충전된 디바이스를 칭한다.
"CBP"는 카바졸 바이페닐을 칭한다.
"EL"은 광을 방사시키는, 여기자를 발생시키도록 정공들과 전자들이 재결합하는 층인, "방사층"을 칭한다.
"ETL"은 스택 OLED 디바이스의 방사층에 전자를 제공하기 위해 사용된 층인, "전자 이송층"을 칭한다.
"HTL"은 스택 OLED 디바이스의 방사층에 정공들을 제공하기 위해 사용된 층인, "정공 이송층"을 칭한다.
"NPD"는 N,N'-디페닐-N,N'-비스-알파나프틸벤지다인을 칭한다.
"픽셀"은 디스플레이 스크린상의 최소 어드레스가능 단위를 칭한다.
"PtOEP"는 2,3,7,8,12,13,17,18-옥타에틸-21H,23H-포르핀 플래티늄(II)을 칭한다.
도1A는 종래 기술에 따른 통상적인 유기 이중 헤테로구조체 광 방사 디바이스(OLED)의 단면도이다.
도1B는 종래 기술에 따른 통상적인 유기 단일 헤테로구조체 광 방사 디바이스(OLED)의 단면도이다.
도1C는 종래 기술에 따른 공지된 단일 층 폴리머 LED 구조체의 단면도이다.
도2는 본 발명의 실시예의 단면도이다.
도3은 본 발명의 예의 실시예의 단면도이다.
도4(a)는 블로킹 층을 포함하지 않는 스택 광 방사 디바이스에 대한 방사 스펙트럼을 도시한다.
도4(b)는 본 발명의 실시예에 따라, 블로킹 층을 포함하는 스택 광 방사 디바이스에 대한 방사 스펙트럼을 도시한다.
도5는 본 발명의 실시예에 따른 블로킹 층을 포함하는 스택 광 방사 디바이 스의 효율을 블로킹 층을 포함하지 않는 스택 광 방사 디바이스에 비교하는 도면이다.
본 발명은 실질적으로 투명한 양극; 상기 양극상의 정공 이송층; 상기 정공 이송층상의 방사층; 상기 방사층상의 블로킹층; 상기 블로킹층상의 전자이송층; 및 상기 전자 이송층과 전기적으로 접촉하는 음극을 포함하는 광 방사 디바이스를 포함한다. 본 발명의 디바이스들에 사용된 블로킹 층은 실질적으로 여기자들의 확산을 블로킹하여, 디바이스 효율을 향상시키도록 방사층내에 여기자들을 실질적으로 유지시킨다.
본 발명의 디바이스들은 인광 전자발광을 겪는 방사물질과 가장 이득적으로 사용된다. 그러한 디바이스들에 있어, 정공 이송층으로부터의 정공들은 트리플릿-계 여기자들을 형성하기 위해 전자 이송층으로부터의 전자들과 방사층에서 재결합한다. 광을 방사하기 이전에, 그러한 여기자들은 비교적 긴 거리에 대해 확산하여, 광을 방사하기 이전에 일부 여기자들이 방사층 외부로 확산될 가능성을 향샹시킨다. 소정의 경우들에 있어, 여기자들이 음극으로 확산되고 음극에 의해 퀀칭되어, 비방사 여기자가 소멸되게 한다. 그러한 현상을 최소화하기 위해, 본 발명은 전자들의 확산을 허용하지만 그곳을 통한 여기자의 확산을 실질적으로 방지하는 블로킹 층을 사용한다. 블로킹층은 또한 그곳을 통한 정공들의 확산을 실질적으로 방지할 수 있다. 그러므로, 방사층에서 생성된 여기자들은 방사층에 대해 한정되어 디바이스 성능 및 효율을 실질적으로 향상시킨다.
본 발명의 블로킹층은 그 최하위 점유 분자 궤도와 그 최상위 점유 분자 궤도 사이의 밴드 갭을 특징으로 한다. 본 발명에 따라, 이런 밴드갭은 블로킹 층을 통해 여기자들의 확산을 실질적으로 방지하지만, 완성된 전자발광 디바이스의 턴온 전압에 최소의 영향만을 끼친다. 그러므로, 밴드 갭은 바람직하게도 방사층에서 생성된 여기자들의 에너지 레벨보다 커서, 그러한 여기자들이 블로킹층들에 존재할 수 없다.
본 발명의 실시예가 도2에 도시되어 있다. 디바이스(100)는 실질적으로 투명한 기판(110), 실질적으로 투명한 양극(111), 정공 이송층(112), 방사층(113), 블로킹 층(114), 전자 이송층(115), 및 음극(117)을 포함한다. 방사층(113)은 또한 선택적으로 전자 이송층으로 작용한다. 저 일함수(바람직하게는, <4 eV) 금속층(116)은 전자 이송층(115)상에 선택적으로 형성된다. 금속층(116)접촉 물질 및 부딪치는 광선들의 반사를 위한 반사 물질 둘 모두로서 작용한다. 방사층(113)으로부터의 광 방사는 전압이 음극(117)과 양극(11)사이에 인가될 때 발생한다. 블로킹 층(114)은 방사층(113)으로부터 전자 이송층(115)으로의 여기자들의 확산을 실질적으로 방지한다. 여기자들은 또한 방사층(113)과 정공 이송층(111) 사이의 인터페이스에서의 에너지 장벽 때문에 정공이송층(111)으로의 확산이 실질적으로 방지된다. 여기자들은 그러므로 방사층(113)내로 실질적으로 한정된다.
디바이스(100)에 사용된 물질들은 각각의 층(들)의 목적(들)을 달성하는 임의의 적절한 물질들을 포함한다. 이하의 물질들이 예시적인 목적만을 위해 제공된다. 실예로, 기판(110)은 일반적으로 유리, 석영, 사파이어 또는 플라스틱 같은 투명한 물질로 제조된다. 기판(110)은 예를 들면, 강성, 가요성 및/또는 바람직한 형태로 형성된다. 양극(111)은 인듐 주석 산화물 같은, 임의의 실질적으로 투명한, 도전성 물질을 포함한다. 금속층(116)에 대해 적절한 후보 물질은 Mg, Mg/Ag, 및 Li/Al을 포함한다. 음극(117)은 실예로, ITO, Al, Ag 또는 Au로 제조된다.
블로킹 층(114)은 그곳을 통한 여기자들의 확산을 실질적으로 방지하기 위해 충분한 밴드 갭을 갖는 임의의 적절한 물질로 제조된다. 실예를 통해, 블로킹 층(114)의 적절한 후보 물질들은 NPD, CBP, BCP 및 Alq3를 포함한다. 필요한 불러킹 층 물질이 방사층에 사용된 물질에 의존하는, 방사층에 형성된 여기자들의 에너지 레벨 보다 큰 밴드 갭만을 가짐에 따라, 블로킹 층 물질의 선택은 방사층에 사용된 물질의 선택에 따른다. 실예를 통해, 블로킹 층(114)은 방사층(513)이 CBP를 포함할 때 BCP로 제조된다.
HTL, EL, 및 ETL에 사용된 물질은 본 기술분야에 공지되어 있다. 예를 들면, 청색 방사를 위해, 방사층(113)은 예를 들면, 3가 금속 퀴놀레이트 복합물, 스키프계 2가 금속 복합물, 금속 아세틸아세톤에이트 복합물, 금속 바이덴테이트 리간드 복합물, 비스포스포네이트, 금속 멜론트릴에디티올레이트 복합물, 분자 충전 전달 복합물, 아로매틱 및 헤테로사이클릭 폴리머 킬레이트 같은 임의의 적절한 청색 광방사 유기 복합물을 포함한다. 상기 층(113)을 위해 사용될 수 있는 금속 바이덴테이트 복합물은 식 MDL4 2 을 가지는데, 여기에서, M은 주기율표의 3-13족 및 란탄족의 금속에서 선택된다. 바람직한 금속 이온들은 Al+3, Ga+3, In+3, 및 Sc+3이다. D는 2-피코릴케톤, 2-퀴날딜케톤 및 2-(O-페녹시) 피리딘 케톤 같은 바이덴테이트 리간드이다. L4에 대한 바람직한 그룹들은 아세틸아세톤에이트, 식 OR3R의 화합물, 여기에서, R3는 Si 및 C로부터 선택되고, R은 하이드로겐, 치환 및 비치환된 알킬, 아릴 및 헤테로사이클릭 그룹으로부터 선택됨; 3,5-디(t-bu)페놀; 2,6-디(t-bu) 페놀; 2,6-디(t-bu)크레졸; 및 H2Bpz2를 포함한다. 예를 들면, 알루미늄(피코릴메틸케톤) 비스[2,6-디(t-bu)페녹사이드]의 고체상태에서의 발광 측정의 결과 파장은 420nm이다. 이런 화합물의 크레졸 유도체는 또한 420nm로 측정된다. 알루미늄(피코릴메틸-케톤) 비스(OsiPh3) 및 스칸듐(4-메톡시-피코릴-메틸케톤)비스(아세틸아세톤에이트는 각각 433nm인데 반해, 알루미늄 [2-(O-페녹시)피리딘]비스[2,6-디(t-bu)페녹사이드]는 450nm이다.
녹색 OLED 물질의 실예는 식 SnL1 2L2 2를 가지는 것 같은, 주석(iv) 금속 복합물을 포함하는데, 여기에서, L1은 살리실알데히드, 살리사이클릭 산 또는 퀴놀레이트(예를 들면, 8-하이드록시퀴놀린)로부터 선택된다. L2가 치환 및 비치환된 알킬, 아릴 및 헤테로사이클릭 그룹일 수 있다. L1이 퀴놀레이트이고 L2가 페닐일 때, 예를 들면, 주석(iv) 금속 복합물은 504nm의 방사 파장을 가진다.
적색 OLED 물질의 실예는, C.E.존슨 등의, 미국 화학 학회의 저널 105, 1795(1983년)의 "발광 이리듐(I), 로듐(I) 및 플래티늄(II) 디티올레이트 복합물(Luminescent Iridium(I), Rhodium(I), and Platinum(II) Dithiolate Complexes)" 에 기술된 것 같은, 2가 금속 멜로니트릴에디티올레이트("mnt")복합물을 포함한다. 예를 들면, mnt(Pt (Pph3)는 652nm의 특성 파장 방사를 가진다.
추가적인 OLED 물질들은 본 기술분야에 공지되어 있다(참고로, 예를 들면, 탕 등에게 허여된, "유기 전자발광 다색 이미지 디스플레이 디바이스(Organic Electroluminescent Multicolor Image Display Device)"라는 명칭의 미국 특허 제5,294,870호; 호소가와 등의 (1995년 12월) 응용물리학 67, 3853-55, "신규한 도판트를 갖는 디스트릴아릴렌 방사층으로부터의 고효율 청색 전자발광(Highly efficient blue electroluminescent from a distyrylarylene emitting layer with a new dopant)"; 아다치 등의, (1990년 2월) 응용 물리학 56, 799-801, "청색 광방사 유기 전자발광 디바이스(Blue light-emitting organic electroluminescent devices)"; 뷔로우 등의 응용물리학 69, 2959-61, (1996년 11월) "컬러 조율가능한 유기 광 방사 디바이스(Color-Tunable Organic Light Emitting Devices)"). 상기 참고 문헌의 전체 기술이 본문에 참고로 인용된다. 호소가와 등에 기술된 것들과 같은 디스트릴아릴렌 유도체들은 바람직한 종류의 화합물이다.
본 발명의 디바이스들의 방사층에 사용될 수 있는 인광 및 형광 염료들은 또한 기술분야에 또한 공지되어 있다. 본문에 참고로 인용되는 미국 특허 제4,769,292호 및 제5,294,870호가 예시되어 있다. 인광체 염료들은 예를 들면, 고체 폴리머 매트릭스로 진공 증착되거나 또는 폴리메틸메타크릴레이트 같은 매트릭스 폴리머로 용해된다. 녹색 형광 염료의 실예는 시아닌, 메로시아닌, 복합 시아닌 및 메로시아닌, 옥소놀, 헤미옥소놀, 스티릴, 메로스트틸, 및 스트렙토시아닌을 포함하는 폴리메틴 염료이다. 적색 형광 염료는 실예로, 4-디시아노-메틸렌-4H-피랜 및 4-디시아노메틸렌-4H-티오피랜이다.
본 발명의 실시예에 있어서, 방사층은 인광 전자 발광을 겪고 유기 호스트의 인광체를 포함한다. 바람직한 실시예에 있어서, 방사층은 PtOEP로 도핑된 CBP를 포함한다.
상기 나열된 층들 및 물질들을 위한 증착 기술 중 어느것이라도 기술분야에 잘 공지되어 있다. 실예로, OLED 층들(실예로, HTL, EL 및 ETL 층들)을 증착시키는 바람직한 방법은 열 증착(또는 폴리머 LED가 사용된다면 스핀 코팅)에 의해 이루어지고; 금속층들을 증착하는 바람직한 방법은 열 또는 전자-빔 증착에 의하고; 인듐 주석 산화물을 증착하는 바람직한 방법은 전자-빔 증착 또는 스퍼터링에 의한다.
본 발명은 효율적인, 고 휘도, 단색 또는 다색의, 임의의 크기의 평판 디스플레이들을 제공하는데 사용된다. 그러한 디스플레이들에 생성된 이미지들은 개별적인 LED들의 크기에 따라 임의의 해상도의, 완전 컬러의 텍스트 또는 그림이 될 수 있다. 그러므로, 본 발명의 디스플레이 디바이스들은 광고판 및 간판, 컴퓨터모니터, 전화기 같은 통신 장치, 텔레비젼, 대면적 벽스크린, 극장 스크린 또는 스 타디움 스크린을 포함하는 매우 광범위한 응용물들에 적합하다. 본문에 기술된 구조체들은 실예로 광 방사 디바이스의 다수의 픽셀들로 또는 단일-픽셀 디바이스의 부분으로 포함되어 있다. 더욱이, 본문에 기술된 구조체들은 레이저 디바이스의 부분으로 사용될 수 있다.
본 발명은 이하의 제한되지 않는 실시예에 대한 참고로 보다 기술된다.
도3에 도시된 바와 같은, 인광 전자발광 디바이스(500)는 통상적인 증착 기술을 사용하여 형성하였다. 디바이스(500)는 유리 기판(510)상에 증착된 하기의 층들을 포함했다: 인듐 주석 산화물을 포함하는 양극(511); NPD를 포함하는 약 450Å 두께의 HTL(512); 약 8% PtOEP로 도핑된 CBP를 포함하는 약 400Å 두께의 EL(513); BCP를 포함하는 약 80Å두께의 블로킹 층(514); Alq3 를 포함하는 약 250Å 두께의 ETL(515); 마그네슘-은 합금을 포함하는 약 1000Å두께의 접촉층(516); 및 은을 포함하는 500Å 두께의 음극(517).
블로킹층(514)은 EL(513)로부터 ETL(515)로의 여기자 확산을 방지하기 위해 디바이스(500)에 포함시켰다. 층(514)의 여기자 블로킹 작용은 도4(a) 및 4(b)의 스펙트럼을 비교하여 증명했다. 도4(a)에 있어, 블로킹 층(514)이 없는 디바이스(그러나, 그렇지 않고 디바이스(500)와 동일한)의 방사 스펙트럼을 전류밀도의 범위를 위해 도시하였다. 약 λ=520nm의 강한 녹색 방사가 블로킹 층(514)이 없는 디바이스에 대해서는 Alq3 ETL(515)로부터 관측했는데 반해, 그러한 방사는 블로킹층(514)이 ETL(515)로의 여기자 확산 및 상응하는 Alq3 방사(도4(b))을 방지했던 디바이스에 대해서는 관측하지 못했다.
EL(513)로부터의 여기자 확산 블로킹에 부가하여, 블로킹 층(514)의 사용은 트리플릿이 EL(513)에 실질적으로 유지되도록 하여 디바이스의 효율이 향상되도록 하였다. 도5에 도시된 바와 같이, 블로킹 층(514)이 없는 디바이스의 양자 효율은 100cd/m2 의 발광에서 약 0.55%까지 하락되는데(커브A) 반해, 디바이스(500)에 대해서는 동일한 발광에서 약 0.9%만 하락되었다(커브B).
본 발명은 고효율 전자 발광 디바이스들을 제공하되, 특히 인광 방사를 위한 것이다. 당업자들은 본문에 기술되고 도시된 발명의 실시예들에 대한 다양한 변형을 인지할 수 있을 것이다. 그러한 변형들은 첨부된 청구항의 사상 및 범위로 포함되도록 의도된다.

Claims (20)

  1. 픽셀을 포함하는 광 방사 디바이스에 있어서,
    투명한 도전성 물질로 이루어진 양극;
    상기 양극상의 정공 이송층;
    상기 정공 이송층상의 방사층;
    상기 방사층상의 블로킹층;
    상기 블로킹층상의 전자이송층; 및
    상기 전자 이송층과 전기적으로 접촉하는 음극
    을 구비한 픽셀을 포함하는 것을 특징으로 하는 광 방사 디바이스.
  2. 제1항에 있어서, 상기 블로킹층은 상기 방사층에 형성된 여기자의 에너지 레벨보다 큰 밴드갭을 특징으로 하는 광 방사 디바이스.
  3. 제2항에 있어서, 상기 블로킹층은 BCP, Alq3, CBP 및 NPD로 이루어지는 그룹으로부터 선택된 물질을 포함하는 것을 특징으로 하는 광 방사 디바이스.
  4. 제3항에 있어서, 상기 블로킹 층은 BCP를 포함하는 것을 특징으로 하는 광 방사 디바이스.
  5. 제4항에 있어서, 상기 방사층은 PtOEP로 도핑된 CBP를 포함하는 것을 특징으로 하는 광 방사 디바이스.
  6. 제1항에 있어서, 상기 양극은 인듐 주석 산화물을 포함하는 것을 특징으로 하는 광 방사 디바이스.
  7. 제1항에 있어서, 상기 방사층은 전자 이송층으로도 작용하는 것을 특징으로 하는 광 방사 디바이스.
  8. 제1항에 있어서, 상기 방사층은 인광에 의해 광을 방사하는 것을 특징으로 하는 광 방사 디바이스.
  9. 제8항에 있어서, 상기 방사층은 유기 호스트의 인광체를 포함하는 것을 특징으로 하는 광 방사 디바이스.
  10. 제9항에 있어서, 상기 인광체는 PtOEP를 포함하고 상기 유기 호스트는 CBP를 포함하는 것을 특징으로 하는 광 방사 디바이스.
  11. 제1항에 있어서, 상기 방사층은 형광에 의해 광을 방사하는 것을 특징으로 하는 광 방사 디바이스.
  12. 제1항에 있어서, 상기 양극 하부에 투명 기판을 더 포함하는 것을 특징으로 하는 광 방사 디바이스.
  13. 제12항에 있어서, 상기 기판은 유리를 포함하는 것을 특징으로 하는 광 방사 디바이스.
  14. 제1항에 있어서, 상기 음극은 알루미늄, 은, 금 및 이들의 함금으로 이루어진 그룹으로부터 선택된 금속을 포함하는 것을 특징으로 하는 광 방사 디바이스.
  15. 제1항에 있어서, 상기 전자 이송층과 상기 음극 사이에 접촉층을 더 포함하는 것을 특징으로 하는 광 방사 디바이스.
  16. 컴퓨터; 텔레비젼; 대면적 벽, 극장 또는 스타디움 스크린; 광고판; 간판; 차량; 프린터; 통신 장치; 및 전화기로 이루어진 그룹으로부터 선택되는 것을 특징으로 하는, 제1항의 디바이스를 채용하는 전자 디바이스.
  17. 픽셀을 포함하는 광 방사 디바이스에 있어서,
    투명 기판;
    상기 기판 상의, 인듐 주석 산화물을 포함하는 투명한 도전성 물질로 이루어진 양극;
    상기 양극 상의, NPD를 포함하는 정공 이송층;
    CBP를 포함하고 인광에 의해 광을 방사하는, 상기 정공 이송층상의 방사층;
    상기 방사층 상의 블로킹층;
    Alq3를 포함하는, 상기 블로킹 층상의 전자 이송층; 및
    상기 전자 이송층과 전기적인 접촉하는 음극
    을 구비한 픽셀을 포함하는 것을 특징으로 하는 광 방사 디바이스.
  18. 다수의 픽셀들을 포함하는 다색 디스플레이 디바이스에 있어서,
    상기 픽셀들 중 적어도 하나는,
    투명한 도전성 물질로 이루어진 양극;
    상기 양극상의 정공 이송층;
    상기 정공 이송층상의 방사층;
    상기 방사층상의 블로킹층;
    상기 블로킹층상의 전자 이송층; 및
    상기 전자 이송층과 전기적으로 접촉하는 음극
    을 포함하는 것을 특징으로 하는 다색 디스플레이 디바이스.
  19. 제18항에 있어서, 상기 블로킹층은 상기 방사층에 형성된 여기자들의 에너지 레벨보다 큰 밴드갭을 특징으로 하는 광 방사 디바이스.
  20. 컴퓨터; 텔레비젼; 대면적 벽, 극장 또는 스타디움 스크린; 광고판; 간판; 차량; 프린터; 통신 장치; 및 전화기로 이루어진 그룹으로부터 선택되는 것을 특징으로 하는, 제18항의 디바이스를 채용하는 전자 디바이스.
KR1020017003267A 1998-09-14 1999-09-14 고효율 전자발광 디바이스를 위한 구조 KR100698964B1 (ko)

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