JP5163959B2 - 電界効果トランジスタを形成する方法、およびトランジスタゲートアレイとゲートアレイ周辺回路を含む集積回路を形成する方法 - Google Patents
電界効果トランジスタを形成する方法、およびトランジスタゲートアレイとゲートアレイ周辺回路を含む集積回路を形成する方法 Download PDFInfo
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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Description
ェハ(単独で、もしくはその上に他の材料を含むアセンブリとしてのいずれか)や半導電性材料層(単独で、もしくは他の材料を含むアセンブリとしてのいずれか)などのバルク半導電性材料を含むが限定はされない、半導電性材料を含む任意の構造を意味するものと定義される。“基板”という用語は、上述の半導電性基板を含むが限定はされない任意の支持構造を称する。基板10は、その中に電界効果トランジスタゲートアレイが製造されるアレイエリアもしくは領域12と、ゲートアレイ領域12の周辺にある周辺回路領域14を含むように描かれている。ほんの一例として、アレイ領域12は例えばDRAM回路などのメモリ回路の製造に利用されてもよく、一方周辺回路領域14はアレイ領域12内のメモリ回路を動作/制御するための制御回路を含んでもよい。勿論、例えば論理回路、制御回路もしくはその他の回路においてゲートアレイと電界効果トランジスタを利用するなど、代わりの構成も考慮される。
Claims (9)
- 電界効果トランジスタを形成する方法であって、
基板の半導電性材料の上にマスキング材料を形成するステップであって、前記マスキング材料は、前記基板の上方を覆う内部絶縁体材料層と、該内部絶縁体材料層の上方を覆う外部絶縁体材料層とを含み、前記外部絶縁体材料層は前記内部絶縁体材料層に対して選択的にエッチング可能である、ステップと、
前記マスキング材料を貫通し且つ前記半導電性材料中へと延びるトレンチを形成するステップと、
前記半導電性材料中の前記トレンチ内にゲート誘電体材料を形成するステップと、
前記マスキング材料中の前記トレンチ内、および前記半導電性材料中の前記トレンチ内であって、前記ゲート誘電体材料上に、ゲート材料を堆積するステップと、
前記マスキング材料に対して前記ゲート材料の一部を選択的に除去して、残されたゲート材料の上面が前記マスキング材料の上面よりも低くなるように、前記残されたゲート材料を前記マスキング材料中の前記トレンチ内に埋め込むステップと、
前記マスキング材料中の前記トレンチ内の前記埋め込まれたゲート材料を、前記内部絶縁体材料層と共通の組成の絶縁体材料でキャッピングするステップと、
前記内部絶縁体材料層と、前記埋め込まれたゲート材料の上に受容された前記キャッピング絶縁体材料とに対して、選択的に前記外部絶縁体材料層をエッチングするステップと、
前記外部絶縁体材料層のエッチング後、前記内部絶縁体材料層と共通の組成の絶縁体材料を堆積するステップと、
前記内部絶縁体材料層と共通の組成の前記絶縁体材料を異方性エッチングして、前記ゲート材料の周囲に絶縁側壁スペーサーを形成するステップと、
ソース/ドレイン領域を形成するステップと、
を含む方法。 - 前記外部絶縁体材料層が前記内部絶縁体材料層よりも厚いことを特徴とする、請求項1の方法。
- 前記外部絶縁体層材料が前記内部絶縁体材料層に接触することを特徴とする、請求項1の方法。
- 前記外部絶縁体材料層が前記マスキング材料の最も外側の材料であることを特徴とする、請求項1の方法。
- 前記マスキング材料は、前記基板の上であって且つ前記内部絶縁体材料層の下に受容されたパッド酸化物層をさらに含む、請求項1の方法。
- トランジスタゲートアレイと、前記ゲートアレイの周辺回路とを含む集積回路を形成する方法であって、
基板の半導電性材料の上にマスキング材料を形成するステップであって、前記マスキング材料は、前記基板の上方を覆う内部絶縁体材料層と、該内部絶縁体材料層の上方を覆う外部絶縁体材料層とを含み、前記外部絶縁体材料層は前記内部絶縁体材料層に対して選択的にエッチング可能である、ステップと、
前記マスキング材料を貫通し且つ前記半導電性材料中へと延びるアレイ回路トレンチを形成するステップと、
前記マスキング材料中の前記アレイ回路トレンチ内と、前記半導電性材料中の前記アレイ回路トレンチ内に、アレイゲート材料を堆積するステップと、
前記アレイゲート材料を堆積した後、前記マスキング材料を貫通し且つ前記半導電性材料中へと延びる周辺回路トレンチを形成するステップと、
前記マスキング材料中の前記周辺回路トレンチ内に周辺回路ゲート材料を堆積するステップと、
前記マスキング材料に対して前記アレイゲート材料の一部を選択的に除去して、残されたアレイゲート材料の上面が前記マスキング材料の上面よりも低くなるように、前記残されたアレイゲート材料を前記マスキング材料中の前記アレイ回路トレンチ内に埋め込み、かつ、前記マスキング材料に対して前記周辺回路ゲート材料の一部を選択的に除去して、残された周辺回路ゲート材料の上面が前記マスキング材料の上面よりも低くなるように、前記残された周辺回路ゲート材料を前記マスキング材料中の前記周辺回路トレンチ内に埋め込むステップと、
前記マスキング材料中の前記アレイ回路トレンチ内の前記埋め込まれたアレイゲート材料と、前記マスキング材料中の前記周辺回路トレンチ内の前記埋め込まれた周辺回路ゲート材料とを、前記内部絶縁体材料層と共通の組成の絶縁体材料でキャッピングするステップと、
前記内部絶縁体材料層と、前記埋め込まれたアレイゲート材料及び前記埋め込まれた周辺回路ゲート材料の上に受容された前記キャッピング絶縁体材料とに対して、選択的に前記外部絶縁体材料層をエッチングするステップと、
前記外部絶縁体材料層のエッチング後、前記内部絶縁体材料層と共通の組成の絶縁体材料を堆積するステップと、
前記内部絶縁体材料層と共通の組成の前記絶縁体材料を異方性エッチングして、前記アレイゲート材料および前記周辺回路ゲート材料の周囲に絶縁側壁スペーサーを形成するステップと、
を含む方法。 - トランジスタゲートアレイと前記ゲートアレイの周辺回路とを含む集積回路を形成する方法であって、
基板の半導電性材料の上にマスキング材料を形成するステップであって、前記マスキング材料は、前記基板の上方を覆う内部絶縁体材料層と、該内部絶縁体材料層の上方を覆う外部絶縁体材料層とを含み、前記外部絶縁体材料層は前記内部絶縁体材料層に対して選択的にエッチング可能である、ステップと、
前記マスキング材料を貫通し且つ前記半導電性材料中へと延びるアレイ回路トレンチを形成するステップと、
前記マスキング材料中の前記アレイ回路トレンチ内と、前記半導電性材料中の前記アレイ回路トレンチ内に、アレイゲート材料を堆積するステップと、
前記アレイゲート材料を貫通し且つ前記マスキング材料を貫通し且つ前記半導電性材料中へと延びる周辺回路トレンチを形成するステップと、
前記アレイゲート材料内および前記マスキング材料内の前記周辺回路トレンチ内に周辺回路ゲート材料を堆積するステップと、
前記マスキング材料に対して前記アレイゲート材料の一部を選択的に除去して、残されたアレイゲート材料の上面が前記マスキング材料の上面よりも低くなるように、前記残されたアレイゲート材料を前記マスキング材料中の前記アレイ回路トレンチ内に埋め込み、かつ、前記マスキング材料に対して前記周辺回路ゲート材料の一部を選択的に除去して、残された周辺回路ゲート材料の上面が前記マスキング材料の上面よりも低くなるように、前記残された周辺回路ゲート材料を前記マスキング材料中の前記周辺回路トレンチ内に埋め込むステップと、
前記マスキング材料中の前記アレイ回路トレンチ内の前記埋め込まれたアレイゲート材料と、前記マスキング材料中の前記周辺回路トレンチ内の前記埋め込まれた周辺回路ゲート材料とを、前記内部絶縁体材料層と共通の組成の絶縁体材料でキャッピングするステップと、
前記内部絶縁体材料層と、前記埋め込まれたアレイゲート材料及び前記埋め込まれた周辺回路ゲート材料の上に受容された前記キャッピング絶縁体材料とに対して、選択的に前記外部絶縁体材料層をエッチングするステップと、
前記外部絶縁体材料層のエッチング後、前記内部絶縁体材料層と共通の組成の絶縁体材料を堆積するステップと、
前記内部絶縁体材料層と共通の組成の前記絶縁体材料を異方性エッチングして、前記アレイゲート材料および前記周辺回路ゲート材料の周囲に絶縁側壁スペーサーを形成するステップと、
を含む方法。 - 電界効果トランジスタゲートを形成する方法であって、
基板の半導電性材料の上にマスキング材料を形成するステップであって、前記基板がトレンチ分離領域を含み、前記マスキング材料は、前記基板の上方を覆う内部絶縁体材料層と、該内部絶縁体材料層の上方を覆う外部絶縁体材料層とを含み、前記外部絶縁体材料層は前記内部絶縁体材料層に対して選択的にエッチング可能である、ステップと、
前記マスキング材料を貫通し且つ前記半導電性材料中へと延びる第一のトレンチを形成し、かつ、それと同時に、前記トレンチ分離領域上の前記マスキング材料を貫通し且つ前記トレンチ分離領域中へと延びる第二の接地絶縁ゲートトレンチを形成するステップと、
前記第一のトレンチ内にゲート材料を堆積し、かつ、それと同時に、前記第二のトレンチ内にゲート材料を堆積するステップと、
前記マスキング材料に対して前記ゲート材料の一部を選択的に除去して、残されたゲート材料の上面が前記マスキング材料の上面よりも低くなるように、前記残されたゲート材料を前記マスキング材料中の前記第一及び第二のトレンチ内に埋め込むステップと
前記マスキング材料中の前記第一のトレンチ内の前記埋め込まれたゲート材料と、前記マスキング材料中の前記第二のトレンチ内の前記埋め込まれたゲート材料とを、前記内部絶縁体材料層と共通の組成の絶縁体材料でキャッピングするステップと、
前記内部絶縁体材料層と、前記埋め込まれたゲート材料の上に受容された前記キャッピング絶縁体材料とに対して、選択的に前記外部絶縁体材料層をエッチングするステップと、
前記外部絶縁体材料層のエッチング後、前記内部絶縁体材料層と共通の組成の絶縁体材料を堆積するステップと、
前記内部絶縁体材料層と共通の組成の前記絶縁体材料を異方性エッチングして、前記ゲート材料の周囲に絶縁側壁スペーサーを形成するステップと、
を含む方法。 - 第一のゲートと第二の接地絶縁ゲートとを含むトランジスタゲートアレイを含む集積回路を形成する方法であって、
基板の半導電性材料の上にマスキング材料を形成するステップであって、前記基板がトレンチ分離領域を含み、前記マスキング材料は、前記基板の上方を覆う内部絶縁体材料層と、該内部絶縁体材料層の上方を覆う外部絶縁体材料層とを含み、前記外部絶縁体材料層は前記内部絶縁体材料層に対して選択的にエッチング可能である、ステップと、
前記第一のゲート用に、前記マスキング材料を貫通し且つ前記半導電性材料中へと延びる第一のトレンチを形成するステップと、
前記第二の接地絶縁ゲート用に、前記トレンチ分離領域上の前記マスキング材料を貫通し且つ前記トレンチ分離領域中へと延びる第二の接地絶縁ゲートトレンチを形成するステップと、
前記第一および第二のトレンチ内にゲート材料を堆積するステップと、
前記マスキング材料に対して前記ゲート材料の一部を選択的に除去して、残されたゲート材料の上面が前記マスキング材料の上面よりも低くなるように、前記残されたゲート材料を前記マスキング材料中の前記第一及び第二のトレンチ内に埋め込むステップと、
前記マスキング材料中の前記第一のトレンチ内の前記埋め込まれたゲート材料と、前記マスキング材料中の前記第二のトレンチ内の前記埋め込まれたゲート材料とを、前記内部絶縁体材料層と共通の組成の絶縁体材料でキャッピングするステップと、
前記内部絶縁体材料層と、前記埋め込まれたゲート材料の上に受容された前記キャッピング絶縁体材料とに対して、選択的に前記外部絶縁体材料層をエッチングするステップと、
前記外部絶縁体材料層のエッチング後、前記内部絶縁体材料層と共通の組成の絶縁体材料を堆積するステップと、
前記内部絶縁体材料層と共通の組成の前記絶縁体材料を異方性エッチングして、前記ゲート材料の周囲に絶縁側壁スペーサーを形成するステップと、
を含む方法。
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US11/346,914 | 2006-02-02 | ||
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US20100173456A1 (en) | 2010-07-08 |
US7902028B2 (en) | 2011-03-08 |
JP2009525612A (ja) | 2009-07-09 |
KR20080083202A (ko) | 2008-09-16 |
WO2007111771A3 (en) | 2007-12-21 |
US8389363B2 (en) | 2013-03-05 |
WO2007111771A2 (en) | 2007-10-04 |
CN102013412A (zh) | 2011-04-13 |
CN101375381B (zh) | 2012-09-12 |
US7700441B2 (en) | 2010-04-20 |
CN101375381A (zh) | 2009-02-25 |
US20070178641A1 (en) | 2007-08-02 |
SG169367A1 (en) | 2011-03-30 |
TW200737363A (en) | 2007-10-01 |
EP1979937B1 (en) | 2014-07-30 |
US20110124168A1 (en) | 2011-05-26 |
EP1979937A2 (en) | 2008-10-15 |
SG177967A1 (en) | 2012-02-28 |
KR101010475B1 (ko) | 2011-01-21 |
CN102013412B (zh) | 2014-10-01 |
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