JP6299102B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP6299102B2 JP6299102B2 JP2013156393A JP2013156393A JP6299102B2 JP 6299102 B2 JP6299102 B2 JP 6299102B2 JP 2013156393 A JP2013156393 A JP 2013156393A JP 2013156393 A JP2013156393 A JP 2013156393A JP 6299102 B2 JP6299102 B2 JP 6299102B2
- Authority
- JP
- Japan
- Prior art keywords
- trench
- type
- plane
- gate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 37
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000003647 oxidation Effects 0.000 claims description 46
- 238000007254 oxidation reaction Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004883 computer application Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Description
本発明の第1実施形態について説明する。ここでは、トレンチゲート構造の縦型スイッチング素子として反転型のMOSFETが形成されたSiC半導体装置を例に挙げて説明する。
まず、(0001)面に対してオフ角を有するSiC基板で構成され、窒素等のn型不純物濃度が例えば1.0×1019/cm3で厚さ300μm程度とされたn+型基板1を用意する。このn+型基板1の表面に、窒素等のn型不純物濃度が例えば3.0×1015〜2.0×1016/cm3で厚さ15μm程度のSiCからなるn-型ドリフト層2をエピタキシャル成長させることでエピ基板を形成する。そして、ボロンもしくはアルミニウムなどのp型不純物のイオン注入により、n-型ドリフト層2の表層部に、1.0×1016〜2.0×1019/cm3、厚さ2.0μm程度となるp型ベース領域3を形成する。
続いて、p型ベース領域3の上に、例えばLTO等で構成されるマスク(図示せず)を成膜したのち、フォトリソグラフィ工程を経て、n+型ソース領域4の形成予定領域上においてマスクを開口させる。その後、n型不純物(例えば窒素)をイオン注入する。
p型ベース領域3、n+型ソース領域4およびp+型コンタクト層5の上に、図示しないエッチングマスクを成膜したのち、トレンチ6の形成予定領域においてエッチングマスクを開口させる。そして、エッチングマスクを用いたトレンチエッチング工程を行うことで、トレンチ6を形成する。これにより、オフ方向に対して長手方向が一致させられたトレンチ6が形成される。
トレンチ6の形成後に、犠牲酸化工程を行うことなくそのまま、もしくは例えば、CF4およびO2を含むガスを用いたCDEによるダメージ除去工程を行ったのち、ゲート酸化膜7をデポジション(堆積)により形成する。このとき、犠牲酸化を行っていた場合には、n+型ソース領域4がp型ベース領域3よりも不純物濃度が濃いために増速酸化が行われることになるが、犠牲酸化工程を行っていないため、増速酸化が行われていない。このため、トレンチ6の側壁面において、n+型ソース領域4とp型ベース領域3との境界位置での段差は、10nm以下という小さな段差となる。
続いて、ゲート絶縁膜8の表面にn型不純物をドーピングしたポリシリコン層を例えば600℃の温度下で440nm程度成膜したのち、エッチバック工程等を行うことにより、トレンチ6内にゲート絶縁膜8およびゲート電極9を残す。
(1)上記実施形態では、n+型基板1として主表面が(0001)面に対してオフ角を有するSiC基板を用いたが、主表面が(000−1)面に対してオフ角を有するSiC基板を用いても良い。オフ角も一例として4°とした場合を例に挙げたが、他の角度、例えば2°であっても良い。さらに、n+型基板1として、(0001)面や(000−1)面のジャスト面を主表面とするSiC基板を用いることもできる。
2 n-型ドリフト層
3 p型ベース領域
4 n+型ソース領域
6 トレンチ
7 ゲート酸化膜
8 ゲート電極
9 トレンチゲート構造
11 ソース電極
12 ドレイン電極
Claims (1)
- 炭化珪素からなり、主表面が(0001)面もしくは(000−1)面とされた、または当該各面に対してオフ角を有する第1または第2導電型の基板(1)と、
前記基板の上に形成され、前記基板よりも低不純物濃度とされた第1導電型の炭化珪素からなるドリフト層(2)と、
前記ドリフト層の上に形成された第2導電型の炭化珪素からなるベース領域(3)と、
前記ベース領域の上層部に形成され、前記ドリフト層よりも高濃度の第1導電型の炭化珪素にて構成されたソース領域(4)と、
前記ソース領域の表面から前記ベース領域を貫通して前記ドリフト層に達する深くまで形成され、側壁面が(11−20)面もしくは(1−100)面に向けて形成されたトレンチ(6)と、
前記トレンチの内壁面に形成されたゲート絶縁膜(7)と、
前記トレンチ内において、前記ゲート絶縁膜の上に形成されたゲート電極(8)と、
前記ソース領域および前記ベース領域に電気的に接続されたソース電極(11)と、
前記基板の裏面側に形成されたドレイン電極(12)とを備え、
前記ゲート電極への印加電圧を制御することで前記トレンチの側面に位置する前記ベース領域の表面部に反転型のチャネル領域を形成し、前記ソース領域および前記ドリフト層を介して、前記ソース電極および前記ドレイン電極の間に電流を流すトレンチゲート構造(9)を有する反転型の縦型スイッチング素子を備えた炭化珪素半導体装置の製造方法であって、
前記トレンチをエッチングにて形成するトレンチ形成工程と、
前記トレンチ形成工程の後に、CF4およびO2を含むガスを用いたケミカルドライエッチングを行うダメージ除去工程と、
前記ダメージ除去工程の後に、犠牲酸化工程を行うことなく前記トレンチの表面に前記ゲート絶縁膜を形成するゲート絶縁膜形成工程と、を含み、
前記トレンチ形成工程から前記ダメージ除去工程までの間に犠牲酸化工程を行うことを特徴とする炭化珪素半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013156393A JP6299102B2 (ja) | 2012-08-07 | 2013-07-29 | 炭化珪素半導体装置およびその製造方法 |
PCT/JP2013/004735 WO2014024469A1 (ja) | 2012-08-07 | 2013-08-06 | 炭化珪素半導体装置およびその製造方法 |
US14/415,752 US9793376B2 (en) | 2012-08-07 | 2013-08-06 | Silicon carbide semiconductor device and method of manufacturing the same |
CN201380041833.6A CN104718624B (zh) | 2012-08-07 | 2013-08-06 | 碳化硅半导体装置及其制造方法 |
DE201311003954 DE112013003954T5 (de) | 2012-08-07 | 2013-08-06 | Siliziumcarbidhalbleitervorrichtung und Herstellungsverfahren hierfür |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012174948 | 2012-08-07 | ||
JP2012174948 | 2012-08-07 | ||
JP2013156393A JP6299102B2 (ja) | 2012-08-07 | 2013-07-29 | 炭化珪素半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014053595A JP2014053595A (ja) | 2014-03-20 |
JP6299102B2 true JP6299102B2 (ja) | 2018-03-28 |
Family
ID=50067722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013156393A Active JP6299102B2 (ja) | 2012-08-07 | 2013-07-29 | 炭化珪素半導体装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9793376B2 (ja) |
JP (1) | JP6299102B2 (ja) |
CN (1) | CN104718624B (ja) |
DE (1) | DE112013003954T5 (ja) |
WO (1) | WO2014024469A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6256148B2 (ja) * | 2014-03-27 | 2018-01-10 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
DE102014206361A1 (de) * | 2014-04-03 | 2015-10-08 | Robert Bosch Gmbh | Verfahren zur Herstellung einer dielektrischen Feldplatte in einem Graben eines Substrats, nach dem Verfahren erhältliches Substrat und Leistungstransistor mit einem solchen Substrat |
JP2016082197A (ja) * | 2014-10-22 | 2016-05-16 | 新日鐵住金株式会社 | トレンチ型金属酸化膜半導体電界効果トランジスタ |
JP6453634B2 (ja) | 2014-12-10 | 2019-01-16 | トヨタ自動車株式会社 | 半導体装置 |
WO2016116998A1 (ja) * | 2015-01-19 | 2016-07-28 | 株式会社日立製作所 | 半導体装置及びその製造方法、電力変換装置、3相モータシステム、自動車、並びに鉄道車両 |
JP2016157762A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6411929B2 (ja) * | 2015-03-24 | 2018-10-24 | トヨタ自動車株式会社 | Mosfet |
JP6623772B2 (ja) | 2016-01-13 | 2019-12-25 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP6708954B2 (ja) * | 2016-03-31 | 2020-06-10 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6658406B2 (ja) * | 2016-08-31 | 2020-03-04 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP6928336B2 (ja) * | 2016-12-28 | 2021-09-01 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN107658340B (zh) * | 2017-09-02 | 2019-05-21 | 西安交通大学 | 一种双沟槽的低导通电阻、小栅电荷的碳化硅mosfet器件与制备方法 |
DE102017128633A1 (de) | 2017-12-01 | 2019-06-06 | Infineon Technologies Ag | Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten |
JP7196463B2 (ja) * | 2018-08-23 | 2022-12-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP7075876B2 (ja) * | 2018-12-25 | 2022-05-26 | 株式会社日立製作所 | 炭化ケイ素半導体装置、電力変換装置、3相モータシステム、自動車および鉄道車両 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200355A (en) * | 1990-12-10 | 1993-04-06 | Samsung Electronics Co., Ltd. | Method for manufacturing a mask read only memory device |
JP3461274B2 (ja) * | 1996-10-16 | 2003-10-27 | 株式会社東芝 | 半導体装置 |
US6797323B1 (en) | 1996-11-29 | 2004-09-28 | Sony Corporation | Method of forming silicon oxide layer |
JPH11186248A (ja) | 1997-12-22 | 1999-07-09 | Sony Corp | シリコン酸化膜の形成方法及びシリコン酸化膜形成装置 |
JPH11204517A (ja) | 1998-01-12 | 1999-07-30 | Sony Corp | シリコン酸化膜の形成方法、及びシリコン酸化膜形成装置 |
JP2000068266A (ja) | 1998-08-26 | 2000-03-03 | Sony Corp | 酸化膜の形成方法 |
JP4843854B2 (ja) | 2001-03-05 | 2011-12-21 | 住友電気工業株式会社 | Mosデバイス |
GB0117949D0 (en) * | 2001-07-24 | 2001-09-19 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and their manufacture |
SE527205C2 (sv) | 2004-04-14 | 2006-01-17 | Denso Corp | Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbid |
JP2007066944A (ja) | 2005-08-29 | 2007-03-15 | Nissan Motor Co Ltd | 炭化珪素半導体装置及びその製造方法 |
US7700441B2 (en) * | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
JP5100329B2 (ja) | 2007-11-22 | 2012-12-19 | 三菱電機株式会社 | 半導体装置 |
JP2009302436A (ja) * | 2008-06-17 | 2009-12-24 | Denso Corp | 炭化珪素半導体装置の製造方法 |
US8148749B2 (en) * | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
JP2010238725A (ja) | 2009-03-30 | 2010-10-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5510309B2 (ja) * | 2010-12-22 | 2014-06-04 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
-
2013
- 2013-07-29 JP JP2013156393A patent/JP6299102B2/ja active Active
- 2013-08-06 US US14/415,752 patent/US9793376B2/en active Active
- 2013-08-06 WO PCT/JP2013/004735 patent/WO2014024469A1/ja active Application Filing
- 2013-08-06 DE DE201311003954 patent/DE112013003954T5/de active Pending
- 2013-08-06 CN CN201380041833.6A patent/CN104718624B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE112013003954T5 (de) | 2015-04-23 |
CN104718624B (zh) | 2018-02-13 |
CN104718624A (zh) | 2015-06-17 |
JP2014053595A (ja) | 2014-03-20 |
WO2014024469A1 (ja) | 2014-02-13 |
US9793376B2 (en) | 2017-10-17 |
US20150236127A1 (en) | 2015-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6299102B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP5776610B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP5884617B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
EP2863417B1 (en) | Silicon carbide semiconductor device and method for producing same | |
JP6572423B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US8022414B2 (en) | Silicon carbide semiconductor device, and method of manufacturing the same | |
JP5893172B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
WO2017064949A1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2017092368A (ja) | 半導体装置および半導体装置の製造方法 | |
CN106796955B (zh) | 半导体装置 | |
JP2015072999A (ja) | 炭化珪素半導体装置 | |
JP2012169385A (ja) | 炭化珪素半導体装置 | |
WO2014118859A1 (ja) | 炭化珪素半導体装置 | |
JP2019046908A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2020043243A (ja) | 半導体装置 | |
JP5817204B2 (ja) | 炭化珪素半導体装置 | |
JP5797266B2 (ja) | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 | |
JP2015156429A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2018117017A (ja) | 炭化珪素半導体装置 | |
JP6304878B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6651801B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JPWO2017208301A1 (ja) | 半導体装置 | |
JP6554614B1 (ja) | ワイドギャップ半導体装置 | |
JP6928336B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP2022182509A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160603 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20170224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20170227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170613 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170808 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180212 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6299102 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |