JPWO2017208301A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2017208301A1 JPWO2017208301A1 JP2018520069A JP2018520069A JPWO2017208301A1 JP WO2017208301 A1 JPWO2017208301 A1 JP WO2017208301A1 JP 2018520069 A JP2018520069 A JP 2018520069A JP 2018520069 A JP2018520069 A JP 2018520069A JP WO2017208301 A1 JPWO2017208301 A1 JP WO2017208301A1
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Abstract
Description
図1は、本発明の第1実施形態に係る半導体装置の構成を模式的に示す斜視図である。図2Aは、図1に対応する上面図である。図2Bは、図1のA−A方向から見た断面図である。図2Cは、図1のB−B方向から見た断面図である。第1実施形態では、複数の半導体素子として3つの金属酸化膜半導体電界効果トランジスタ(MOSFET)を有する半導体装置を例示的に説明する。半導体素子は、平面における2軸方向(X軸方向及びZ軸方向)それぞれに更に多数配列されてもよい。なお、図1では分かり易くするため、電極の配線は図示を省略している。
図3は、本発明の第1実施形態の第1変形例に係る半導体装置を説明する斜視図である。第1実施形態の第1変形例に係る半導体装置は、複数の半導体素子と複数の半導体素子とが互いに並列に接続される点で上述の第1実施形態と異なる。第1実施形態の第1変形例において説明しない構成、作用及び効果は、上述の第1実施形態と実質的に同様であり重複するため省略する。
図12は、本発明の第1実施形態の第2変形例に係る半導体装置を説明する斜視図である。図13は、図12に対応する上面図である。第1実施形態の第2変形例に係る半導体装置は、接続領域18がソース電極15に接する点で上述の第1実施形態と異なる。第1実施形態の第2変形例において説明しない構成、作用及び効果は、上述の実施形態と実質的に同様であり重複するため省略する。
図15は、本発明の第2実施形態に係る半導体装置を説明する斜視図である。図16は、図15のA−A方向から見た断面図である。第2実施形態に係る半導体装置は、接続領域18が、ゲート絶縁膜6の底面に接して形成される点で上述の第1実施形態と異なる。以下の第2実施形態において説明しない構成、作用及び効果は、上述の実施形態と実質的に同様であり重複するため省略する。図15及び図16では、分かり易くするため、電極の配線は図示を省略している。
図17は、本発明の第2実施形態の第1変形例に係る半導体装置を説明する斜視図である。第2実施形態の第1変形例に係る半導体装置は、複数の半導体素子と複数の半導体素子とが互いに並列に接続される点で上述の第2実施形態と異なる。第2実施形態の第1変形例において説明しない構成、作用及び効果は、上述の第2実施形態と実質的に同様であり重複するため省略する。
図30は、本発明の第2実施形態の第2変形例に係る半導体装置を説明する斜視図である。図31は、図30のA−A方向から見た断面図である。第2実施形態の第2変形例に係る半導体装置は、保護領域17及び接続領域18それぞれの少なくとも一部が、基板1内部に形成される点で上述の第2実施形態と異なる。第2実施形態の第2変形例において説明しない構成、作用及び効果は、上述の実施形態と実質的に同様であり重複するため省略する。
上記のように、本発明を上記の実施形態によって記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
2 ウェル領域
3 ソース領域
4 ドリフト領域
5 ドレイン領域
6 ゲート絶縁膜
7 ゲート電極
8 ゲート溝
15 ソース電極
16 ドレイン電極
17 保護領域
18 接続領域
Claims (10)
- 基板と、
前記基板の第1主面に形成され、前記基板よりも高不純物濃度の第1導電型のドリフト領域と、
前記ドリフト領域内において、前記ドリフト領域の前記基板と接する第1主面とは反対側の第2主面から、前記第2主面の垂直方向に延設された第2導電型のウェル領域と、
前記ウェル領域内において、前記第2主面から前記垂直方向に延設された第1導電型のソース領域と、
前記第2主面から前記垂直方向に形成され、前記第2主面と平行な方向において前記ソース領域、前記ウェル領域及び前記ドリフト領域に接するように延設されたゲート溝と、
前記ドリフト領域内において、前記ウェル領域と離間して、前記第2主面から前記垂直方向に延設された第1導電型のドレイン領域と、
前記ゲート溝の表面に形成されたゲート絶縁膜と、
前記ゲート絶縁膜の表面に形成されたゲート電極と、
前記ソース領域、前記ウェル領域に電気的に接続されたソース電極と、
前記ドレイン領域に電気的に接続されたドレイン電極とを備える半導体装置において、
前記ドリフト領域内において、前記ゲート絶縁膜の前記ドレイン領域に対向する面に形成された第2導電型の保護領域と、
前記ドリフト領域内において、前記ウェル領域と前記保護領域とに接して形成された第2導電型の接続領域を有し、
前記ウェル領域と前記保護領域とは、前記接続領域により互いに電気的に接続されることを特徴とする半導体装置。 - 前記接続領域は、前記ゲート絶縁膜の前記基板に対向する底面と接して形成されることを特徴とする請求項1に記載の半導体装置。
- 前記接続領域の少なくとも一部は、前記基板内部に形成されていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記保護領域の少なくとも一部は、前記基板内部に形成されていることを特徴とする請求項1乃至3の何れか1項に記載の半導体装置。
- 前記接続領域は、前記ウェル領域より不純物濃度が高いことを特徴とする請求項1乃至4の何れか1項に記載の半導体装置。
- 前記接続領域は、前記ソース電極と接することを特徴とする請求項1乃至5の何れか1項に記載の半導体装置。
- 前記接続領域は、前記第2主面より深い位置で、前記ソース電極と接することを特徴とする請求項6に記載の半導体装置。
- 前記保護領域を複数有し、隣接する前記保護領域と、前記隣接する保護領域間に挟まれる前記ドリフト領域とは、所定の電圧で完全空乏することを特徴とする請求項1乃至7の何れか1項に記載の半導体装置。
- 前記基板は、絶縁体または半絶縁体からなることを特徴とする請求項1乃至8の何れか1項に記載の半導体装置。
- 前記ドリフト領域と前記基板とは、互いに同じ材料で形成されていることを特徴とする請求項1乃至9の何れか1項に記載の半導体装置。
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