JP5893172B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- JP5893172B2 JP5893172B2 JP2014554126A JP2014554126A JP5893172B2 JP 5893172 B2 JP5893172 B2 JP 5893172B2 JP 2014554126 A JP2014554126 A JP 2014554126A JP 2014554126 A JP2014554126 A JP 2014554126A JP 5893172 B2 JP5893172 B2 JP 5893172B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 105
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 105
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000002344 surface layer Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000003763 carbonization Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Description
また、本発明の別の態様に関する炭化珪素半導体装置は、オフ角を有する炭化珪素半導体基板の第1の主面上に形成された炭化珪素で構成される第1導電型のドリフト領域と、前記ドリフト領域の表面上に形成された炭化珪素で構成される第2導電型のウェル領域と、前記ウェル領域の表層部に選択的に形成された炭化珪素で構成される第1導電型のソース領域と、前記ソース領域の表面から前記ウェル領域を貫通して前記ドリフト領域に達するトレンチと、前記トレンチの内部にゲート絶縁膜を介して形成されたゲート電極と、前記ウェル領域と前記ソース領域とに接続されたソース電極と、前記炭化珪素半導体基板の第1の主面の反対側の面である第2の主面に炭化珪素半導体基板に接して形成されたドレイン電極と、前記ウェル領域内に形成された、前記ウェル領域より不純物濃度が大きい第2導電型の高濃度ウェル領域とを備え、前記トレンチの第1側壁面側の前記ウェル領域には低チャネルドープ領域が形成され、前記トレンチの第2側壁面側の前記ウェル領域には前記低チャネルドープ領域より実効的アクセプタ濃度が低い高チャネルドープ領域が形成され、前記トレンチ側壁からの距離が前記低チャネルドープ領域または前記高チャネルドープ領域より大きい前記ウェル領域の内側に前記高濃度ウェル領域を設け、前記第1側壁面から前記ウェル領域までの前記低チャネルドープ領域の幅と、前記第2側壁面から前記ウェル領域までの前記高チャネルドープ領域の幅とが同じであり、前記第1の主面が、(0001)面から[11−20]軸方向へ傾斜するオフ角を有し、前記第1側壁面が、(11−20)面に近い面であり、前記第2側壁面が、(−1−120)面に近い面であるものである。
まず、本発明の実施の形態1における炭化珪素半導体装置の構成を説明する。ここでは、第1導電型をn型、第2導電型をp型として説明する。
なお、図1では、紙面の上側がオフ角θが付いた[0001]方向であり、紙面の右側がオフ角θが付いた[11−20]方向である。
図2では、紙面の上側が[−1100]方向であり、紙面の右側がオフ角θが付いた[11−20]方向である。
このような関係から、本実施の形態のトレンチゲート型MOSFETのトレンチ7の第1側壁面18と第2側壁面19とは、それぞれ、オフ角θを有する(11−20)面とオフ角θを有する(−1−120)面とになる。
また、図5に示すように、反転チャネル層となるウェル領域5のアクセプタ濃度が上がるにつれて、ドレイン電流密度が32〜68A/cm2の範囲で変化している。
このように、図4および図5の結果は、トレンチ7側壁面近傍のウェル領域5のアクセプタ濃度を調整することによって、トレンチ7側壁面のオン状態を調整することが可能であることを示している。
このようにして、図9にその断面模式図を示す構造ができる。
さらに、この後に、(1−100)面および(−1100)面のトレンチ7側壁面に対しても斜めイオン注入法によりウェル領域5と異なるチャネル濃度にすることもできる。
このように、セル構造が矩形以外であっても、セル構造が矩形の場合と同様の効果を得ることができる。
例えば、図19にその断面図を示すように、高チャネルドープ領域13、低チャネルドープ領域14の底面がウェル領域5の底面より浅く形成されてもよい。また、図20にその断面図を示すように、高チャネルドープ領域13、低チャネルドープ領域14の底面がウェル領域5の底面より深く形成されてもよい。
本発明の実施の形態2における炭化珪素半導体装置であるトレンチゲート型MOSFETの構成を説明する。図22は、本発明の実施の形態2における炭化珪素半導体装置であるトレンチゲート型MOSFETを示す断面模式図である。
本発明の実施の形態3における炭化珪素半導体装置であるトレンチゲート型MOSFETの構成を説明する。図23は、本発明の実施の形態3における炭化珪素半導体装置であるトレンチゲート型MOSFETを示す断面模式図である。
したがって、チャネル面に応じて、特に最もパンチスルー破壊電圧が低いと考えられる(−1−120)面に最も近い面ではみ出し距離を大きくするように、トレンチ底面保護ウェル領域22のトレンチ7側面からのはみ出し距離を決めることにより、トレンチ7底部のゲート絶縁膜8への高電圧印加を抑制でき、パンチスルー破壊の発生を防止することができる。
Claims (11)
- オフ角を有する炭化珪素半導体基板の第1の主面上に形成された炭化珪素で構成される第1導電型のドリフト領域と、
前記ドリフト領域の表面上に形成された炭化珪素で構成される第2導電型のウェル領域と、
前記ウェル領域の表層部に選択的に形成された炭化珪素で構成される第1導電型のソース領域と、
前記ソース領域の表面から前記ウェル領域を貫通して前記ドリフト領域に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して形成されたゲート電極と、
前記ウェル領域と前記ソース領域とに接続されたソース電極と、
前記炭化珪素半導体基板の第1の主面の反対側の面である第2の主面に炭化珪素半導体基板に接して形成されたドレイン電極と、
前記ウェル領域内に形成された、前記ウェル領域より不純物濃度が大きい第2導電型の高濃度ウェル領域と
を備え、
前記トレンチの第1側壁面側の前記ウェル領域には低チャネルドープ領域が形成され、前記トレンチの第2側壁面側の前記ウェル領域には前記低チャネルドープ領域より実効的アクセプタ濃度が低い高チャネルドープ領域が形成され、
前記トレンチ側壁からの距離が前記低チャネルドープ領域または前記高チャネルドープ領域より大きい前記ウェル領域の内側に前記ドリフト領域に接するように前記高濃度ウェル領域を設けたことを特徴とする炭化珪素半導体装置。 - 前記第1側壁面から前記ウェル領域までの前記低チャネルドープ領域の幅と、前記第2側壁面から前記ウェル領域までの前記高チャネルドープ領域の幅とが同じであることを特徴とする請求項1に記載の炭化珪素半導体装置。
- オフ角を有する炭化珪素半導体基板の第1の主面上に形成された炭化珪素で構成される第1導電型のドリフト領域と、
前記ドリフト領域の表面上に形成された炭化珪素で構成される第2導電型のウェル領域と、
前記ウェル領域の表層部に選択的に形成された炭化珪素で構成される第1導電型のソース領域と、
前記ソース領域の表面から前記ウェル領域を貫通して前記ドリフト領域に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して形成されたゲート電極と、
前記ウェル領域と前記ソース領域とに接続されたソース電極と、
前記炭化珪素半導体基板の第1の主面の反対側の面である第2の主面に炭化珪素半導体基板に接して形成されたドレイン電極と、
前記ウェル領域内に形成された、前記ウェル領域より不純物濃度が大きい第2導電型の高濃度ウェル領域と
を備え、
前記トレンチの第1側壁面側の前記ウェル領域には低チャネルドープ領域が形成され、前記トレンチの第2側壁面側の前記ウェル領域には前記低チャネルドープ領域より実効的アクセプタ濃度が低い高チャネルドープ領域が形成され、
前記トレンチ側壁からの距離が前記低チャネルドープ領域または前記高チャネルドープ領域より大きい前記ウェル領域の内側に前記高濃度ウェル領域を設け、
前記第1側壁面から前記ウェル領域までの前記低チャネルドープ領域の幅と、前記第2側壁面から前記ウェル領域までの前記高チャネルドープ領域の幅とが同じであり、
前記第1の主面が、(0001)面から[11−20]軸方向へ傾斜するオフ角を有し、
前記第1側壁面が、(11−20)面に近い面であり、
前記第2側壁面が、(−1−120)面に近い面である
ことを特徴とする炭化珪素半導体装置。 - 前記オフ角は、1°以上10°以下であることを特徴とする請求項1乃至3のいずれか1項に記載の炭化珪素半導体装置。
- 前記ウェル領域の第2導電型不純物濃度は、1×1016/cm3以上、5×1018/cm3以下であることを特徴とする請求項1乃至3のいずれか1項に記載の炭化珪素半導体装置。
- 前記トレンチの底部の前記ドリフト領域内に、トレンチ底面保護ウェル領域を備えたことを特徴とする請求項1乃至3のいずれか1項に記載の炭化珪素半導体装置。
- 前記トレンチ底面保護ウェル領域は、前記トレンチ側壁からのはみ出し距離が、前記第1側壁面側で前記第2側壁面側より大きいことを特徴とする請求項6に記載の炭化珪素半導体装置。
- オフ角を有する炭化珪素半導体基板の第1の主面上に炭化珪素で構成される第1導電型のドリフト領域を形成する工程と、
前記ドリフト領域の表面上に炭化珪素で構成される第2導電型のウェル領域を形成工程と、
前記ウェル領域の表層部に選択的に炭化珪素で構成される第1導電型のソース領域を形成する工程と、
前記ソース領域の表面から前記ウェル領域を貫通して前記ドリフト領域に達するトレンチを形成する工程と、
前記トレンチの内部にゲート絶縁膜を介してゲート電極を形成する工程と、
前記ウェル領域と前記ソース領域と接するソース電極を形成する工程と、
前記炭化珪素半導体基板の第1の主面の反対側の面である第2の主面にドレイン電極を形成する工程と、
前記ウェル領域内の前記トレンチの第1側壁面側に、低チャネルドープ領域を形成する工程と、
前記ウェル領域内の前記トレンチの第2側壁面側に、前記低チャネルドープ領域より実効的アクセプタ濃度が低い高チャネルドープ領域を形成する工程と、
前記トレンチ側壁からの距離が前記低チャネルドープ領域または前記高チャネルドープ領域より大きい前記ウェル領域の内側に、前記ドリフト領域に接するように前記ウェル領域より第2導電型不純物濃度が高い第2導電型の高濃度ウェル領域を形成する工程と
を備えたことを特徴とする炭化珪素半導体装置の製造方法。 - 前記低チャネルドープ領域または前記高チャネルドープ領域を形成後に前記トレンチを形成することを特徴とする請求項8に記載の炭化珪素半導体装置の製造方法。
- ストライプ状の第1トレンチをエッチングして形成した後に、前記第1トレンチのストライプ方向と直交方向するから傾斜してイオン注入することにより前記低チャネルドープ領域または前記高チャネルドープ領域を形成し、その後、前記第1トレンチを全て覆うマスクを形成して前記第1トレンチと直交する第2トレンチをエッチングすることを特徴とする請求項8に記載の炭化珪素半導体装置の製造方法。
- 前記トレンチの底面に第2導電型のトレンチ底面保護ウェル領域を形成する工程を更に備え、前記トレンチ底面保護ウェル領域は、前記トレンチを形成後に、イオン注入のイオンの角度を第1側壁面側に傾斜させて注入することを特徴とする請求項8に記載の炭化珪素半導体装置の製造方法。
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CN104885227A (zh) | 2015-09-02 |
CN104885227B (zh) | 2017-08-25 |
JPWO2014103257A1 (ja) | 2017-01-12 |
US20150333126A1 (en) | 2015-11-19 |
DE112013006262T5 (de) | 2015-10-29 |
WO2014103257A1 (ja) | 2014-07-03 |
US9337271B2 (en) | 2016-05-10 |
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