CN110326109B - 功率半导体装置和用于制造功率半导体装置的方法 - Google Patents
功率半导体装置和用于制造功率半导体装置的方法 Download PDFInfo
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- CN110326109B CN110326109B CN201780053282.3A CN201780053282A CN110326109B CN 110326109 B CN110326109 B CN 110326109B CN 201780053282 A CN201780053282 A CN 201780053282A CN 110326109 B CN110326109 B CN 110326109B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 229910010271 silicon carbide Inorganic materials 0.000 description 18
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- 229910052782 aluminium Inorganic materials 0.000 description 8
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- 229920002120 photoresistant polymer Polymers 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16176786.8A EP3264470A1 (en) | 2016-06-29 | 2016-06-29 | Short channel trench power mosfet |
EP16176786.8 | 2016-06-29 | ||
PCT/EP2017/065852 WO2018002048A1 (en) | 2016-06-29 | 2017-06-27 | Short channel trench power mosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110326109A CN110326109A (zh) | 2019-10-11 |
CN110326109B true CN110326109B (zh) | 2022-09-13 |
Family
ID=56289400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780053282.3A Active CN110326109B (zh) | 2016-06-29 | 2017-06-27 | 功率半导体装置和用于制造功率半导体装置的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190363166A1 (zh) |
EP (2) | EP3264470A1 (zh) |
JP (1) | JP6937326B2 (zh) |
CN (1) | CN110326109B (zh) |
WO (1) | WO2018002048A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7275573B2 (ja) * | 2018-12-27 | 2023-05-18 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN113396482B (zh) * | 2019-02-07 | 2023-12-19 | 罗姆股份有限公司 | 半导体装置 |
EP4016644A1 (en) * | 2020-12-21 | 2022-06-22 | Hitachi Energy Switzerland AG | Power semiconductor device and method for manufacturing a power semiconductor device |
DE112021006569T5 (de) | 2020-12-21 | 2023-10-05 | Hitachi Energy Switzerland Ag | Leistungshalbleitervorrichtung und verfahren zum herstellen einer leistungshalbleitervorrichtung |
CN113097298B (zh) * | 2021-03-30 | 2024-09-17 | 全球能源互联网研究院有限公司 | 一种绝缘栅双极型晶体管及其制备方法 |
JP2023076986A (ja) * | 2021-11-24 | 2023-06-05 | 株式会社デンソー | 半導体装置とその製造方法 |
CN114242779B (zh) * | 2022-02-24 | 2022-05-10 | 成都功成半导体有限公司 | 一种带有沟槽的碳化硅积累态mosfet |
KR102446171B1 (ko) * | 2022-03-03 | 2022-09-23 | (주) 트리노테크놀로지 | 확장된 헤일로 영역을 가지는 실리콘 카바이드 전력 반도체 장치 및 그 제작 방법 |
CN114883409B (zh) * | 2022-03-29 | 2024-05-10 | 东莞清芯半导体科技有限公司 | 功率半导体器件及其应用 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5629543A (en) * | 1995-08-21 | 1997-05-13 | Siliconix Incorporated | Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness |
US5547882A (en) | 1995-10-11 | 1996-08-20 | Mosel Vitelic Inc. | Method for forming retrograde channel profile by phosphorus implantation through polysilicon gate |
GB9815021D0 (en) * | 1998-07-11 | 1998-09-09 | Koninkl Philips Electronics Nv | Semiconductor power device manufacture |
US8133789B1 (en) | 2003-04-11 | 2012-03-13 | Purdue Research Foundation | Short-channel silicon carbide power mosfet |
CN101308869B (zh) * | 2003-08-27 | 2010-06-23 | 三菱电机株式会社 | 绝缘栅型晶体管以及逆变器电路 |
JP2006114834A (ja) * | 2004-10-18 | 2006-04-27 | Toshiba Corp | 半導体装置 |
US20080206944A1 (en) * | 2007-02-23 | 2008-08-28 | Pan-Jit International Inc. | Method for fabricating trench DMOS transistors and schottky elements |
JP4564514B2 (ja) * | 2007-05-18 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
JP5586887B2 (ja) * | 2009-07-21 | 2014-09-10 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
US20120080748A1 (en) * | 2010-09-30 | 2012-04-05 | Force Mos Technology Co., Ltd. | Trench mosfet with super pinch-off regions |
JP5206824B2 (ja) * | 2011-03-04 | 2013-06-12 | 株式会社明電舎 | シャシーダイナモメータシステムの慣性検証装置 |
JP5673393B2 (ja) * | 2011-06-29 | 2015-02-18 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2013219161A (ja) * | 2012-04-09 | 2013-10-24 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
US20140306284A1 (en) * | 2013-04-12 | 2014-10-16 | Infineon Technologies Austria Ag | Semiconductor Device and Method for Producing the Same |
JP6177154B2 (ja) * | 2013-07-16 | 2017-08-09 | 株式会社東芝 | 半導体装置 |
DE102014200429A1 (de) | 2014-01-13 | 2015-07-16 | Robert Bosch Gmbh | Trench-MOSFET-Transistorvorrichtung, Substrat für Trench-MOSFET-Transistorvorrichtung und entsprechendes Herstellungsverfahren |
DE102014114235B3 (de) * | 2014-09-30 | 2016-01-28 | Infineon Technologies Ag | Verfahren zum Bilden eines Transistors, Verfahren zum Strukturieren eines Substrates und Transistor |
US9484452B2 (en) * | 2014-12-10 | 2016-11-01 | Alpha And Omega Semiconductor Incorporated | Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs |
US10763418B2 (en) * | 2017-03-03 | 2020-09-01 | Iee International Electronics & Engineering S.A. | Thermoelectric device |
US20190148487A1 (en) * | 2017-11-15 | 2019-05-16 | Sanken Electric Co., Ltd. | Semiconductor device including partitioning layer extending between gate electrode and source electrode |
-
2016
- 2016-06-29 EP EP16176786.8A patent/EP3264470A1/en not_active Withdrawn
-
2017
- 2017-06-27 CN CN201780053282.3A patent/CN110326109B/zh active Active
- 2017-06-27 EP EP17733450.5A patent/EP3479410B1/en active Active
- 2017-06-27 JP JP2018567896A patent/JP6937326B2/ja active Active
- 2017-06-27 WO PCT/EP2017/065852 patent/WO2018002048A1/en unknown
-
2018
- 2018-12-31 US US16/236,679 patent/US20190363166A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP3264470A1 (en) | 2018-01-03 |
WO2018002048A8 (en) | 2019-08-22 |
US20190363166A1 (en) | 2019-11-28 |
JP6937326B2 (ja) | 2021-09-22 |
EP3479410B1 (en) | 2020-08-05 |
JP2019519938A (ja) | 2019-07-11 |
EP3479410A1 (en) | 2019-05-08 |
CN110326109A (zh) | 2019-10-11 |
WO2018002048A1 (en) | 2018-01-04 |
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