JP5840308B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- JP5840308B2 JP5840308B2 JP2014554125A JP2014554125A JP5840308B2 JP 5840308 B2 JP5840308 B2 JP 5840308B2 JP 2014554125 A JP2014554125 A JP 2014554125A JP 2014554125 A JP2014554125 A JP 2014554125A JP 5840308 B2 JP5840308 B2 JP 5840308B2
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 103
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 103
- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 17
- 239000010410 layer Substances 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Description
まず、本発明の実施の形態1における炭化珪素半導体装置の構成を説明する。ここでは、第1導電型をn型、第2導電型をp型として説明する。
なお、図1では、紙面の上側がオフ角θが付いた[0001]方向であり、紙面の右側がオフ角θが付いた[11−20]方向である。
図2では、紙面の上側が[−1100]方向であり、紙面の右側がオフ角θが付いた[11−20]方向である。
このような関係から、本実施の形態のトレンチゲート型MOSFETのトレンチ7の第1側壁面18と第2側壁面19とは、それぞれ、オフ角θを有する(11−20)面とオフ角θを有する(−1−120)面とになる。
また、図5に示すように、高濃度ウェル領域13とトレンチ7側壁面との距離が小さくなるにつれて、ドレイン電流密度が減少している。
このように、図4および図5の結果は、高濃度ウェル領域13とトレンチ7側壁面の距離を調整することによって、トレンチ7側壁面のオン状態を調整することが可能であることを示している。
このように、セル構造が矩形以外であっても、セル構造が矩形の場合と同様の効果を得ることができる。
例えば、図20にその断面図を示すように、高濃度ウェル領域13の底面がウェル領域5の底面より浅く形成されてもよい。また、図21にその断面図を示すように、高濃度ウェル領域13の底面がウェル領域5の底面より深く形成されてもよい。
本発明の実施の形態2における炭化珪素半導体装置であるトレンチゲート型MOSFETの構成を説明する。図23は、本発明の実施の形態2における炭化珪素半導体装置であるトレンチゲート型MOSFETを示す断面模式図である。
実施の形態1の図4に示した結果から、高濃度ウェル領域13とトレンチ7側壁面との距離が0.5μm以下の場合に、閾値電圧の変動が特に顕著であることがわかる。一方で、炭化珪素半導体装置のオフ時の耐圧を確保するためには、高濃度ウェル領域13のp型不純物濃度を1×1018/cm3〜5×1018/cm3程度の高濃度にする必要がある。
本発明の実施の形態3における炭化珪素半導体装置であるトレンチゲート型MOSFETの構成を説明する。図24は、本発明の実施の形態3における炭化珪素半導体装置であるトレンチゲート型MOSFETを示す断面模式図である。
したがって、高濃度ウェル領域13とトレンチ7側面の距離に応じて(比例関係があるように)、トレンチ底面保護ウェル領域14のトレンチ7側面の距離からのはみ出し距離を決めることにより、トレンチ7底部のゲート絶縁膜8への高電圧印加を抑制でき、パンチスルー破壊の発生を防止することができる。
図26は、実施の形態1の図11と同じように3種類のマスクを形成した断面模式図である。図26においても、トレンチ7と高濃度ウェル領域13を形成するための例えば酸化珪素などの無機材料のマスク33の上に、マスク33とエピタキシャル層3の表面を覆うようにメタルなどの無機材料のマスク34が形成され、その上に、高濃度ウェル領域13注入部分を覆うように有機材料または無機材料のマスク35が形成されている。
Claims (13)
- オフ角を有する炭化珪素半導体基板の第1の主面上に形成された炭化珪素で構成される第1導電型のドリフト領域と、
前記ドリフト領域の表面上に形成された炭化珪素で構成される第2導電型のウェル領域と、
前記ウェル領域の表層部に選択的に形成された炭化珪素で構成される第1導電型のソース領域と、
前記ソース領域の表面から前記ウェル領域を貫通して前記ドリフト領域に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して形成されたゲート電極と、
前記ウェル領域と前記ソース領域とに接続されたソース電極と、
前記炭化珪素半導体基板の第1の主面の反対側の面である第2の主面に炭化珪素半導体基板に接して形成されたドレイン電極と、
前記ウェル領域内に形成された、前記ウェル領域より不純物濃度が大きい第2導電型の高濃度ウェル領域と
を備え、
前記トレンチの第1側壁面から前記高濃度ウェル領域までの距離は、前記トレンチ内で前記トレンチの第1側壁面と前記ゲート電極を介して対向する前記トレンチの第2側壁面から前記高濃度ウェル領域までの距離より小さいことを特徴とする炭化珪素半導体装置。 - 前記第1側壁面に形成された電界効果トランジスタの閾値電圧は、前記第1側壁面と前記高濃度ウェル領域までの距離が前記第2側壁面と前記高濃度ウェル領域までの距離と同じであるときに、前記第2側壁面に形成された電界効果トランジスタの閾値電圧より低いことを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記第1の主面が、(0001)面から[11−20]軸方向へ傾斜するオフ角を有し、
前記第1側壁面が、(11−20)面に近い面であり、
前記第2側壁面が、(−1−120)面に近い面である
ことを特徴とする請求項2に記載の炭化珪素半導体装置。
- 前記オフ角は、1°以上10°以下であることを特徴とする請求項1乃至3のいずれか1項に記載の炭化珪素半導体装置。
- 前記高濃度ウェルの第2導電型不純物濃度は、5×1017/cm3以上、5×1018/cm3以下であることを特徴とする請求項1乃至3のいずれか1項に記載の炭化珪素半導体装置。
- 前記高濃度ウェル領域の内側であって前記トレンチ側壁からの距離が前記高濃度ウェル領域より大きい領域に、前記高濃度ウェル領域より第2導電型不純物濃度が高い第2導電型の第2高濃度ウェル領域を設けたことを特徴とする請求項1乃至3のいずれか1項に記載の炭化珪素半導体装置。
- 前記トレンチの底部の前記ドリフト領域内に、トレンチ底面保護ウェル領域を備えたことを特徴とする請求項1乃至3のいずれか1項に記載の炭化珪素半導体装置。
- 前記トレンチ底面保護ウェル領域は、前記トレンチ側壁からのはみ出し距離が、前記第1側壁面側で前記第2側壁面より大きいことを特徴とする請求項7に記載の炭化珪素半導体装置。
- オフ角を有する炭化珪素半導体基板の第1の主面上に炭化珪素で構成される第1導電型のドリフト領域を形成する工程と、
前記ドリフト領域の表面上に炭化珪素で構成される第2導電型のウェル領域を形成工程と、
前記ウェル領域の表層部に選択的に炭化珪素で構成される第1導電型のソース領域を形成する工程と、
前記ソース領域の表面から前記ウェル領域を貫通して前記ドリフト領域に達するトレンチを形成する工程と、
前記トレンチの内部にゲート絶縁膜を介してゲート電極を形成する工程と、
前記ウェル領域と前記ソース領域と接するソース電極を形成する工程と、
前記炭化珪素半導体基板の第1の主面の反対側の面である第2の主面にドレイン電極を形成する工程と、
前記ウェル領域内に、前記トレンチの第1側壁面からの距離が、前記トレンチ内で前記トレンチの第1側壁面と前記ゲート電極を介して対向する前記トレンチの第2側壁面からの距離より小さくなるように、前記ウェル領域より第2導電型不純物濃度が高い第2導電型の高濃度ウェル領域を形成する工程と
を備えたことを特徴とする炭化珪素半導体装置の製造方法。 - 前記トレンチを形成する工程で設けたマークを基準として、高濃度ウェル領域を形成することを特徴とする請求項9に記載の炭化珪素半導体装置の製造方法。
- 前記トレンチと前記高濃度ウェル領域との間の距離を一つのマスクで決めることを特徴とする請求項9に記載の炭化珪素半導体装置の製造方法。
- 前記トレンチの底面に第2導電型のトレンチ底面保護ウェル領域を形成する工程を更に備え、前記トレンチ底面保護ウェル領域は、前記トレンチを形成後に、イオン注入のイオンの角度を第1側壁面側に傾斜させて注入することを特徴とする請求項9に記載の炭化珪素半導体装置の製造方法。
- 前記トレンチの底面に第2導電型のトレンチ底面保護ウェル領域を形成する工程と前記高濃度ウェル領域を形成する工程とを同じイオン注入で行なうことを特徴とする請求項11に記載の炭化珪素半導体装置の製造方法。
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