JP2015216369A - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP2015216369A JP2015216369A JP2015087718A JP2015087718A JP2015216369A JP 2015216369 A JP2015216369 A JP 2015216369A JP 2015087718 A JP2015087718 A JP 2015087718A JP 2015087718 A JP2015087718 A JP 2015087718A JP 2015216369 A JP2015216369 A JP 2015216369A
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- transistor
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- oxide semiconductor
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- film
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- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Inorganic materials [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/144—Devices controlled by radiation
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01L27/144—Devices controlled by radiation
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Electrodes Of Semiconductors (AREA)
Abstract
Description
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
本実施の形態では、実施の形態1で説明した回路91ついて説明する。
本実施の形態では、電荷蓄積部(FD)の電位を初期化するトランジスタ、電荷蓄積部(FD)の電位に応じた信号を出力するトランジスタ、および各配線(信号線)を画素間(回路91間)で兼用する場合の回路構成について説明する。
本実施の形態では、画素回路の駆動方法の一例について説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体を有するトランジスタについて図面を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態5に示したトランジスタの構成要素について詳細を説明する。
本実施の形態では、実施の形態5で説明したトランジスタ101、およびトランジスタ107の作製方法を説明する。
以下では、本発明の一態様に用いることのできる酸化物半導体膜の構造について説明する。
以下では、本発明の一態様のトランジスタのバンド構造について説明する。
本実施の形態では、酸化物半導体層中の酸素欠損および当該酸素欠損の結合する水素の効果について説明する。
酸化物半導体膜(以下、IGZOと示す。)が完全な結晶の場合、室温では、Hは、優先的にab面に沿って拡散する。また、450℃の加熱処理の際には、Hは、ab面およびc軸方向それぞれに拡散する。そこで、ここでは、IGZOに酸素欠損Voが存在する場合、Hは酸素欠損Vo中に入りやすいか否かについて説明する。ここで、酸素欠損Vo中にHがある状態をVoHと表記する。
IGZO中において酸素欠損Voが存在する場合、上記NEB法を用いた計算より、水素原子は安定なVoHを形成しやすいといえる。そこで、VoHがキャリアトラップに関与するかを調べるため、VoHの遷移レベルの算出を行った。
ここでは、先の実施の形態に示すトランジスタの変形例について、図52乃至図54を用いて説明する。図52に示すトランジスタは、基板821上の絶縁層824上に形成された酸化物半導体層828と、酸化物半導体層828に接する絶縁層837と、絶縁層837と接し且つ酸化物半導体層828と重畳する導電層840と、を有する。なお、絶縁層837は、ゲート絶縁膜としての機能を有する。また、導電層840は、ゲート電極層としての機能を有する。
本実施の形態では、撮像装置(イメージセンサ)の画像処理エンジンの一例について、図55を用いて説明する。
50 トランジスタ
51 トランジスタ
52 トランジスタ
53 トランジスタ
54 トランジスタ
55 トランジスタ
56 トランジスタ
58a トランジスタ
58b トランジスタ
58c トランジスタ
60 フォトダイオード
60a フォトダイオード
60b フォトダイオード
60c フォトダイオード
60p 受光部
61 アノード
62 カソード
63 低抵抗領域
64 光制御層
66 領域
70 導電体
71 配線層
72 配線層
73 配線層
80 絶縁層
81 絶縁層
82 絶縁層
83 絶縁層
84 絶縁層
85 絶縁層
90 画素
91 回路
91a 領域
91b 領域
91c 領域
92 回路
92a 領域
101 トランジスタ
102 トランジスタ
103 トランジスタ
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
108 トランジスタ
109 トランジスタ
110 トランジスタ
111 トランジスタ
112 トランジスタ
115 基板
120 絶縁層
130 酸化物半導体層
130a 酸化物半導体層
130A 酸化物半導体膜
130b 酸化物半導体層
130B 酸化物半導体膜
130c 酸化物半導体層
130C 酸化物半導体膜
140 導電層
141 導電層
142 導電層
150 導電層
151 導電層
152 導電層
156 レジストマスク
160 絶縁層
160A 絶縁膜
170 導電層
171 導電層
171A 導電膜
172 導電層
172A 導電膜
173 導電層
175 絶縁層
180 絶縁層
190 絶縁層
231 領域
232 領域
233 領域
311 配線
312 配線
313 配線
314 配線
315 配線
316 配線
317 配線
331 領域
332 領域
333 領域
334 領域
335 領域
400 基板
401 絶縁層
402 絶縁層
402a 絶縁層
402b 絶縁層
404 導電層
404a 導電層
404b 導電層
406 半導体層
406a 半導体層
406b 半導体層
407a 領域
407a1 領域
407a2 領域
407b 領域
407b1 領域
407b2 領域
408 絶縁層
408a 絶縁層
412 絶縁層
414 導電層
414a 導電層
414b 導電層
416a 導電層
416a1 導電層
416a2 導電層
416b 導電層
416b1 導電層
416b2 導電層
418 絶縁層
428 絶縁層
501 信号
502 信号
503 信号
504 信号
505 信号
506 信号
507 信号
508 信号
509 信号
510 期間
511 期間
520 期間
531 期間
610 期間
611 期間
612 期間
621 期間
622 期間
623 期間
631 期間
701 信号
702 信号
703 信号
704 信号
705 信号
821 基板
824 絶縁層
828 酸化物半導体層
828a 領域
828b 領域
828c 領域
828d 領域
828e 領域
828f 領域
828g 領域
828h 領域
828i 領域
837 絶縁層
840 導電層
840a 導電層
840b 導電層
846 絶縁層
847 絶縁層
856 導電層
857 導電層
901 筐体
902 筐体
903 表示部
904 表示部
905 マイク
906 スピーカー
907 操作キー
908 スタイラス
909 カメラ
911 筐体
912 表示部
919 カメラ
921 筐体
922 シャッターボタン
923 マイク
925 レンズ
927 発光部
931 筐体
932 表示部
933 リストバンド
939 カメラ
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 筐体
952 表示部
954 スピーカー
955 ボタン
956 入出力端子
957 マイク
959 カメラ
1100 層
1200 層
1300 層
1400 層
1500 絶縁層
1510 遮光層
1520 有機樹脂層
1530 カラーフィルタ
1530a カラーフィルタ
1530b カラーフィルタ
1530c カラーフィルタ
1540 マイクロレンズアレイ
1550 光学変換層
1600 支持基板
1700 画素マトリクス
1730 回路
1740 回路
1750 回路
1760 回路
1770 端子
1800 シフトレジスタ
1810 シフトレジスタ
1900 バッファ回路
1910 バッファ回路
2100 アナログスイッチ
2110 垂直出力線
2200 出力線
4000 撮像部
4002 回路
4005 撮像データ
4010 アナログメモリ部
4011 アナログメモリ
4020 画像処理エンジン部
4025 画像処理後撮像データ
4030 A/D変換部
4035 画像データ
Claims (6)
- 第1の回路と、第2の回路を有する撮像装置であって、
前記第1の回路は第1のトランジスタと第2のトランジスタとを有し、
前記第2の回路は第3のトランジスタとフォトダイオードを有し、
前記第1のトランジスタはシリコン基板の第1の面に設けられ、前記フォトダイオードは前記シリコン基板に設けられ、
前記第2のトランジスタは前記第1のトランジスタの上に設けられ、
前記シリコン基板は第1の絶縁層を有し、
前記第1の絶縁層は前記フォトダイオードの側面を囲むように設けられ、
前記第1のトランジスタはp−ch型トランジスタであり、
前記第1のトランジスタは前記シリコン基板に活性領域を有し、
前記第2のトランジスタおよび前記第3のトランジスタはn−ch型トランジスタであり、
前記第2のトランジスタおよび前記第3のトランジスタの活性層は酸化物半導体を有し、
前記フォトダイオードの受光面は前記シリコン基板の第1の面とは逆側の面に設けられていることを特徴とする撮像装置。 - 請求項1において、
前記第1のトランジスタおよび前記第2のトランジスタは、CMOS回路を構成していることを特徴とする撮像装置。 - 請求項1または2において、
前記第2の回路はさらに、第4乃至第6のトランジスタを有し、
前記第4乃至第6のトランジスタは、n−ch型トランジスタであり、
前記第4乃至第6のトランジスタの活性層は酸化物半導体を有し、
前記第3のトランジスタのソースまたはドレインの一方は前記フォトダイオードのアノードまたはカソードに電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は前記第4のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は前記第5のトランジスタのゲートと電気的に接続され、
前記第5のトランジスタのソースまたはドレインの一方は前記第6のトランジスタのソースまたはドレインの一方と電気的に接続されていることを特徴とする撮像装置。 - 請求項1乃至3のいずれか一項において、
前記酸化物半導体層は、Inと、Znと、M(MはAl、Ti、Sn、Ga、Y、Zr、La、Ce、NdまたはHf)と、を有することを特徴とする撮像装置。 - 請求項1乃至4のいずれか一項において、
前記シリコン基板の第1面における結晶の面方位は(110)面であることを特徴とする撮像装置。 - 請求項1乃至4のいずれか一項に記載の撮像装置と、
表示装置、操作キー、または、シャッターボタンと、
を有することを特徴とする電子機器。
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KR102404297B1 (ko) | 2022-06-07 |
JP7153762B2 (ja) | 2022-10-14 |
JP7152462B2 (ja) | 2022-10-12 |
TWI747021B (zh) | 2021-11-21 |
KR102380829B1 (ko) | 2022-03-31 |
KR102541664B1 (ko) | 2023-06-12 |
TW202015229A (zh) | 2020-04-16 |
TW201543660A (zh) | 2015-11-16 |
KR102386360B1 (ko) | 2022-04-15 |
JP2020077889A (ja) | 2020-05-21 |
US20150311245A1 (en) | 2015-10-29 |
JP2021108399A (ja) | 2021-07-29 |
TW202107692A (zh) | 2021-02-16 |
JP6805377B2 (ja) | 2020-12-23 |
KR20150122589A (ko) | 2015-11-02 |
US9905598B2 (en) | 2018-02-27 |
TWI675464B (zh) | 2019-10-21 |
KR20200140772A (ko) | 2020-12-16 |
JP2022179566A (ja) | 2022-12-02 |
JP2021048410A (ja) | 2021-03-25 |
JP6585916B2 (ja) | 2019-10-02 |
JP2019216270A (ja) | 2019-12-19 |
KR20200138702A (ko) | 2020-12-10 |
KR20230088312A (ko) | 2023-06-19 |
KR20200003770A (ko) | 2020-01-10 |
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