WO2008114588A1 - スパッタリングターゲット、酸化物半導体膜及び半導体デバイス - Google Patents

スパッタリングターゲット、酸化物半導体膜及び半導体デバイス Download PDF

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Publication number
WO2008114588A1
WO2008114588A1 PCT/JP2008/053458 JP2008053458W WO2008114588A1 WO 2008114588 A1 WO2008114588 A1 WO 2008114588A1 JP 2008053458 W JP2008053458 W JP 2008053458W WO 2008114588 A1 WO2008114588 A1 WO 2008114588A1
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Prior art keywords
sputtering target
semiconductor device
oxide semiconductor
semiconductor film
oxide
Prior art date
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PCT/JP2008/053458
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English (en)
French (fr)
Inventor
Kazuyoshi Inoue
Koki Yano
Masashi Kasami
Original Assignee
Idemitsu Kosan Co., Ltd.
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Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39765698&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2008114588(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Idemitsu Kosan Co., Ltd. filed Critical Idemitsu Kosan Co., Ltd.
Priority to US12/532,247 priority Critical patent/US8333913B2/en
Priority to CN200880016174XA priority patent/CN101680081B/zh
Priority to JP2009505113A priority patent/JP5306179B2/ja
Publication of WO2008114588A1 publication Critical patent/WO2008114588A1/ja
Priority to US13/468,119 priority patent/US8668849B2/en

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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
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    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
    • C04B2235/81—Materials characterised by the absence of phases other than the main phase, i.e. single phase materials

Abstract

　インジウム（Ｉｎ）、及びガドリニウム（Ｇｄ）、ジスプロシウム（Ｄｙ）、ホルミウム（Ｈｏ）、エルビウム（Ｅｒ）及びイッテルビウム（Ｙｂ）から選ばれる元素を少なくとも１種以上を含む酸化物の焼結体からなるスパッタリングターゲットであって、前記酸化物の焼結体が実質的にビックスバイト構造からなるスパッタリングターゲット。
PCT/JP2008/053458 2007-03-20 2008-02-28 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス WO2008114588A1 (ja)

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US12/532,247 US8333913B2 (en) 2007-03-20 2008-02-28 Sputtering target, oxide semiconductor film and semiconductor device
CN200880016174XA CN101680081B (zh) 2007-03-20 2008-02-28 溅射靶、氧化物半导体膜及半导体器件
JP2009505113A JP5306179B2 (ja) 2007-03-20 2008-02-28 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
US13/468,119 US8668849B2 (en) 2007-03-20 2012-05-10 Sputtering target, oxide semiconductor film and semiconductor device

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