FI20075675A0 - Järjestelmä, menetelmät ja laitteet komplementtimetallioksidipuolijohde(CMOS)antennikytkimiä varten käyttämällä runkokytkentää monipinoisessa rakenteessa - Google Patents

Järjestelmä, menetelmät ja laitteet komplementtimetallioksidipuolijohde(CMOS)antennikytkimiä varten käyttämällä runkokytkentää monipinoisessa rakenteessa

Info

Publication number
FI20075675A0
FI20075675A0 FI20075675A FI20075675A FI20075675A0 FI 20075675 A0 FI20075675 A0 FI 20075675A0 FI 20075675 A FI20075675 A FI 20075675A FI 20075675 A FI20075675 A FI 20075675A FI 20075675 A0 FI20075675 A0 FI 20075675A0
Authority
FI
Finland
Prior art keywords
frameworks
cmos
equipment
methods
metal oxide
Prior art date
Application number
FI20075675A
Other languages
English (en)
Swedish (sv)
Other versions
FI20075675L (fi
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Publication of FI20075675A0 publication Critical patent/FI20075675A0/fi
Publication of FI20075675L publication Critical patent/FI20075675L/fi

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
FI20075675A 2006-10-03 2007-09-28 Järjestelmä, menetelmät ja laitteet komplementtimetallioksidipuolijohde(CMOS)antennikytkimiä varten käyttämällä runkokytkentää monipinoisessa rakenteessa FI20075675L (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82793106P 2006-10-03 2006-10-03
US11/857,322 US7890063B2 (en) 2006-10-03 2007-09-18 Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure

Publications (2)

Publication Number Publication Date
FI20075675A0 true FI20075675A0 (fi) 2007-09-28
FI20075675L FI20075675L (fi) 2008-04-04

Family

ID=39259201

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20075675A FI20075675L (fi) 2006-10-03 2007-09-28 Järjestelmä, menetelmät ja laitteet komplementtimetallioksidipuolijohde(CMOS)antennikytkimiä varten käyttämällä runkokytkentää monipinoisessa rakenteessa

Country Status (7)

Country Link
US (1) US7890063B2 (fi)
KR (1) KR100946001B1 (fi)
CN (1) CN101159440B (fi)
DE (1) DE102007046883B4 (fi)
FI (1) FI20075675L (fi)
FR (1) FR2906655B1 (fi)
GB (1) GB2442848B (fi)

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US7817966B2 (en) * 2007-07-13 2010-10-19 Skyworks Solutions, Inc. Switching device with reduced intermodulation distortion
US7738841B2 (en) * 2007-09-14 2010-06-15 Samsung Electro-Mechanics Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
KR101153524B1 (ko) * 2010-02-01 2012-06-12 한국과학기술원 Ｒｆ 스위치 회로
KR101153565B1 (ko) * 2010-02-01 2012-06-12 한국과학기술원 Ｒｆ 스위치 회로
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JP5476198B2 (ja) * 2010-04-19 2014-04-23 ルネサスエレクトロニクス株式会社 高周波スイッチ回路
US8766724B2 (en) 2010-12-05 2014-07-01 Rf Micro Devices (Cayman Islands), Ltd. Apparatus and method for sensing and converting radio frequency to direct current
US8604873B2 (en) 2010-12-05 2013-12-10 Rf Micro Devices (Cayman Islands), Ltd. Ground partitioned power amplifier for stable operation
US8629725B2 (en) 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
JP5814547B2 (ja) * 2010-12-20 2015-11-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
JP5714886B2 (ja) * 2010-12-20 2015-05-07 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
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US9124354B2 (en) 2011-05-12 2015-09-01 St-Ericsson Sa Isolation and protection circuit for a receiver in a wireless communication device
US8909171B2 (en) * 2011-07-19 2014-12-09 Samsung Electro-Mechanics Co., Ltd. RF antenna switch circuit, high frequency antenna component, and mobile communication device
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US9035716B2 (en) * 2012-01-20 2015-05-19 Samsung Electro-Mechanics Co., Ltd. High frequency switch
US8729948B2 (en) 2012-01-20 2014-05-20 Samsung Electro-Mechanics Co., Ltd. High frequency switch
JP5880114B2 (ja) * 2012-02-17 2016-03-08 ソニー株式会社 集積回路および無線通信装置
US9160328B2 (en) 2012-07-07 2015-10-13 Skyworks Solutions, Inc. Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
US20140009209A1 (en) * 2012-07-07 2014-01-09 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US9628075B2 (en) 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US9148194B2 (en) 2012-07-07 2015-09-29 Skyworks Solutions, Inc. Radio-frequency switch system having improved intermodulation distortion performance
US9276570B2 (en) 2012-07-07 2016-03-01 Skyworks Solutions, Inc. Radio-frequency switch having gate node voltage compensation network
US10147724B2 (en) 2012-07-07 2018-12-04 Skyworks Solutions, Inc. Feed-forward circuit to improve intermodulation distortion performance of radio-frequency switch
US9059702B2 (en) 2012-07-07 2015-06-16 Skyworks Solutions, Inc. Switch linearization by non-linear compensation of a field-effect transistor
US8975950B2 (en) 2012-07-07 2015-03-10 Skyworks Solutions, Inc. Switching device having a discharge circuit for improved intermodulation distortion performance
US8843083B2 (en) 2012-07-09 2014-09-23 Rf Micro Devices (Cayman Islands), Ltd. CMOS switching circuitry of a transmitter module
US8731490B2 (en) 2012-07-27 2014-05-20 Rf Micro Devices (Cayman Islands), Ltd. Methods and circuits for detuning a filter and matching network at the output of a power amplifier
US9106198B2 (en) * 2012-08-23 2015-08-11 Qualcomm Incorporated High power tunable capacitor
KR101378866B1 (ko) * 2012-08-23 2014-03-27 주식회사 하이딥 저전력 ｒｆ 스위치
US9590674B2 (en) * 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US9013225B2 (en) 2013-02-04 2015-04-21 Skyworks Solutions, Inc. RF switches having increased voltage swing uniformity
KR20150073274A (ko) * 2013-12-20 2015-07-01 삼성전기주식회사 고주파 스위치
CN104852715A (zh) * 2015-04-17 2015-08-19 上海华虹宏力半导体制造有限公司 射频天线开关
CN105227167B (zh) * 2015-09-21 2018-09-25 温州大学 一种cmos开关电路
US10298187B2 (en) * 2016-08-12 2019-05-21 Qualcomm Incorporated Selective high and low power amplifier switch architecture
CN106656127B (zh) * 2016-10-12 2020-09-15 上海华虹宏力半导体制造有限公司 射频开关电路
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US10910714B2 (en) 2017-09-11 2021-02-02 Qualcomm Incorporated Configurable power combiner and splitter
CN114499484B (zh) * 2021-12-28 2023-04-18 电子科技大学 一种双频段超宽带4×8射频矩阵开关

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Also Published As

Publication number Publication date
FR2906655B1 (fr) 2012-06-15
DE102007046883B4 (de) 2017-04-27
KR100946001B1 (ko) 2010-03-09
US7890063B2 (en) 2011-02-15
DE102007046883A1 (de) 2008-07-31
KR20080031133A (ko) 2008-04-08
US20080079653A1 (en) 2008-04-03
GB2442848B (en) 2011-09-07
FR2906655A1 (fr) 2008-04-04
GB2442848A (en) 2008-04-16
GB0719303D0 (en) 2007-11-14
CN101159440A (zh) 2008-04-09
FI20075675L (fi) 2008-04-04
CN101159440B (zh) 2011-12-21

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