FR2906655B1 - Systemes, procedes, et appareils pour commutateurs d'antenne en technologie metal oxyde semiconducteur complementaire (cmos) utilisant la commutation de corps dans une structure a empilages multiples - Google Patents

Systemes, procedes, et appareils pour commutateurs d'antenne en technologie metal oxyde semiconducteur complementaire (cmos) utilisant la commutation de corps dans une structure a empilages multiples

Info

Publication number
FR2906655B1
FR2906655B1 FR0758027A FR0758027A FR2906655B1 FR 2906655 B1 FR2906655 B1 FR 2906655B1 FR 0758027 A FR0758027 A FR 0758027A FR 0758027 A FR0758027 A FR 0758027A FR 2906655 B1 FR2906655 B1 FR 2906655B1
Authority
FR
France
Prior art keywords
cmos
systems
methods
semiconductor oxide
stacking structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0758027A
Other languages
English (en)
Other versions
FR2906655A1 (fr
Inventor
Min Sik Ahn
Chang Ho Lee
Chang Hyuk Cho
Jae Joon Chang
Wang Myong Woo
Hak Sun Kim
Joy Laskar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of FR2906655A1 publication Critical patent/FR2906655A1/fr
Application granted granted Critical
Publication of FR2906655B1 publication Critical patent/FR2906655B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
FR0758027A 2006-10-03 2007-10-03 Systemes, procedes, et appareils pour commutateurs d'antenne en technologie metal oxyde semiconducteur complementaire (cmos) utilisant la commutation de corps dans une structure a empilages multiples Expired - Fee Related FR2906655B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82793106P 2006-10-03 2006-10-03
US11/857,322 US7890063B2 (en) 2006-10-03 2007-09-18 Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure

Publications (2)

Publication Number Publication Date
FR2906655A1 FR2906655A1 (fr) 2008-04-04
FR2906655B1 true FR2906655B1 (fr) 2012-06-15

Family

ID=39259201

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0758027A Expired - Fee Related FR2906655B1 (fr) 2006-10-03 2007-10-03 Systemes, procedes, et appareils pour commutateurs d'antenne en technologie metal oxyde semiconducteur complementaire (cmos) utilisant la commutation de corps dans une structure a empilages multiples

Country Status (7)

Country Link
US (1) US7890063B2 (fr)
KR (1) KR100946001B1 (fr)
CN (1) CN101159440B (fr)
DE (1) DE102007046883B4 (fr)
FI (1) FI20075675L (fr)
FR (1) FR2906655B1 (fr)
GB (1) GB2442848B (fr)

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JP5814547B2 (ja) * 2010-12-20 2015-11-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
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US9124354B2 (en) 2011-05-12 2015-09-01 St-Ericsson Sa Isolation and protection circuit for a receiver in a wireless communication device
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CN103219976A (zh) * 2012-01-19 2013-07-24 三星电机株式会社 高频开关
US9035716B2 (en) * 2012-01-20 2015-05-19 Samsung Electro-Mechanics Co., Ltd. High frequency switch
US8729948B2 (en) 2012-01-20 2014-05-20 Samsung Electro-Mechanics Co., Ltd. High frequency switch
JP5880114B2 (ja) * 2012-02-17 2016-03-08 ソニー株式会社 集積回路および無線通信装置
US8975950B2 (en) 2012-07-07 2015-03-10 Skyworks Solutions, Inc. Switching device having a discharge circuit for improved intermodulation distortion performance
US9059702B2 (en) 2012-07-07 2015-06-16 Skyworks Solutions, Inc. Switch linearization by non-linear compensation of a field-effect transistor
US9628075B2 (en) 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US20140009209A1 (en) * 2012-07-07 2014-01-09 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US9148194B2 (en) 2012-07-07 2015-09-29 Skyworks Solutions, Inc. Radio-frequency switch system having improved intermodulation distortion performance
US9276570B2 (en) 2012-07-07 2016-03-01 Skyworks Solutions, Inc. Radio-frequency switch having gate node voltage compensation network
US9160328B2 (en) 2012-07-07 2015-10-13 Skyworks Solutions, Inc. Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
US10147724B2 (en) 2012-07-07 2018-12-04 Skyworks Solutions, Inc. Feed-forward circuit to improve intermodulation distortion performance of radio-frequency switch
US8843083B2 (en) 2012-07-09 2014-09-23 Rf Micro Devices (Cayman Islands), Ltd. CMOS switching circuitry of a transmitter module
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US9106198B2 (en) * 2012-08-23 2015-08-11 Qualcomm Incorporated High power tunable capacitor
US9590674B2 (en) * 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US9013225B2 (en) 2013-02-04 2015-04-21 Skyworks Solutions, Inc. RF switches having increased voltage swing uniformity
KR20150073274A (ko) * 2013-12-20 2015-07-01 삼성전기주식회사 고주파 스위치
CN104852715A (zh) * 2015-04-17 2015-08-19 上海华虹宏力半导体制造有限公司 射频天线开关
CN105227167B (zh) * 2015-09-21 2018-09-25 温州大学 一种cmos开关电路
US10298187B2 (en) 2016-08-12 2019-05-21 Qualcomm Incorporated Selective high and low power amplifier switch architecture
CN106656127B (zh) * 2016-10-12 2020-09-15 上海华虹宏力半导体制造有限公司 射频开关电路
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US10910714B2 (en) 2017-09-11 2021-02-02 Qualcomm Incorporated Configurable power combiner and splitter
CN114499484B (zh) * 2021-12-28 2023-04-18 电子科技大学 一种双频段超宽带4×8射频矩阵开关

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Also Published As

Publication number Publication date
KR100946001B1 (ko) 2010-03-09
CN101159440B (zh) 2011-12-21
US20080079653A1 (en) 2008-04-03
FI20075675L (fi) 2008-04-04
DE102007046883A1 (de) 2008-07-31
GB0719303D0 (en) 2007-11-14
CN101159440A (zh) 2008-04-09
US7890063B2 (en) 2011-02-15
DE102007046883B4 (de) 2017-04-27
GB2442848A (en) 2008-04-16
FR2906655A1 (fr) 2008-04-04
FI20075675A0 (fi) 2007-09-28
KR20080031133A (ko) 2008-04-08
GB2442848B (en) 2011-09-07

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