FI20075846A - Järjestelmät, menetelmä ja laitteet suuritehoisia CMOS-antennikytkimiä varten, joissa käytetään rungonkytkentätekniikkaa ja substraattiliitosdiodin ohjausta pinorakenteessa. - Google Patents

Järjestelmät, menetelmä ja laitteet suuritehoisia CMOS-antennikytkimiä varten, joissa käytetään rungonkytkentätekniikkaa ja substraattiliitosdiodin ohjausta pinorakenteessa. Download PDF

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Publication number
FI20075846A
FI20075846A FI20075846A FI20075846A FI20075846A FI 20075846 A FI20075846 A FI 20075846A FI 20075846 A FI20075846 A FI 20075846A FI 20075846 A FI20075846 A FI 20075846A FI 20075846 A FI20075846 A FI 20075846A
Authority
FI
Finland
Prior art keywords
systems
equipment
high power
stack structure
frame switching
Prior art date
Application number
FI20075846A
Other languages
English (en)
Swedish (sv)
Other versions
FI124145B (fi
FI20075846A0 (fi
Inventor
Min Sik Ahn
Chang Ho Lee
Jae Joon Chang
Wang Myong Woo
Hak Sun Kim
Joy Laskar
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Publication of FI20075846A0 publication Critical patent/FI20075846A0/fi
Publication of FI20075846A publication Critical patent/FI20075846A/fi
Application granted granted Critical
Publication of FI124145B publication Critical patent/FI124145B/fi

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H36/00—Switches actuated by change of magnetic field or of electric field, e.g. by change of relative position of magnet and switch, by shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
FI20075846A 2006-12-01 2007-11-28 Järjestelmät, menetelmä ja laitteet suuritehoisia CMOS-antennikytkimiä varten, joissa käytetään rungonkytkentätekniikkaa ja substraattiliitosdiodin ohjausta pinorakenteessa FI124145B (fi)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86817206P 2006-12-01 2006-12-01
US86817206 2006-12-01
US11/943,378 US7843280B2 (en) 2006-12-01 2007-11-20 Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
US94337807 2007-11-20

Publications (3)

Publication Number Publication Date
FI20075846A0 FI20075846A0 (fi) 2007-11-28
FI20075846A true FI20075846A (fi) 2008-06-02
FI124145B FI124145B (fi) 2014-03-31

Family

ID=39473578

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20075846A FI124145B (fi) 2006-12-01 2007-11-28 Järjestelmät, menetelmä ja laitteet suuritehoisia CMOS-antennikytkimiä varten, joissa käytetään rungonkytkentätekniikkaa ja substraattiliitosdiodin ohjausta pinorakenteessa

Country Status (7)

Country Link
US (1) US7843280B2 (fi)
KR (1) KR100916472B1 (fi)
CN (1) CN101192695B (fi)
DE (1) DE102007057656A1 (fi)
FI (1) FI124145B (fi)
FR (1) FR2909497B1 (fi)
GB (1) GB2444406B (fi)

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US7817966B2 (en) * 2007-07-13 2010-10-19 Skyworks Solutions, Inc. Switching device with reduced intermodulation distortion
US7738841B2 (en) * 2007-09-14 2010-06-15 Samsung Electro-Mechanics Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
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US9209784B2 (en) 2010-04-27 2015-12-08 Rf Micro Devices, Inc. Switchable capacitive elements for programmable capacitor arrays
US9673802B2 (en) 2010-04-27 2017-06-06 Qorvo Us, Inc. High power FET switch
US8629725B2 (en) 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
US8604873B2 (en) 2010-12-05 2013-12-10 Rf Micro Devices (Cayman Islands), Ltd. Ground partitioned power amplifier for stable operation
US8766724B2 (en) 2010-12-05 2014-07-01 Rf Micro Devices (Cayman Islands), Ltd. Apparatus and method for sensing and converting radio frequency to direct current
US9124354B2 (en) 2011-05-12 2015-09-01 St-Ericsson Sa Isolation and protection circuit for a receiver in a wireless communication device
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KR20130127782A (ko) * 2012-05-15 2013-11-25 삼성전기주식회사 스위칭 회로 및 이를 포함하는 무선통신 시스템
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US8731490B2 (en) 2012-07-27 2014-05-20 Rf Micro Devices (Cayman Islands), Ltd. Methods and circuits for detuning a filter and matching network at the output of a power amplifier
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CN104160553B (zh) * 2012-09-25 2017-03-01 Dsp集团有限公司 基于cmos的rf天线开关
KR101952857B1 (ko) * 2013-12-20 2019-02-27 삼성전기주식회사 스위칭 회로 및 이를 포함하는 고주파 스위치
CN104935316B (zh) * 2014-03-21 2018-08-31 博通集成电路（上海）股份有限公司 用于控制收发通路切换的射频开关、射频系统和操作方法
CN105227167B (zh) * 2015-09-21 2018-09-25 温州大学 一种cmos开关电路
CN106656127B (zh) * 2016-10-12 2020-09-15 上海华虹宏力半导体制造有限公司 射频开关电路
CN106888009B (zh) * 2017-02-14 2021-03-23 上海华虹宏力半导体制造有限公司 差分收发射频开关和射频终端
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US11700028B2 (en) * 2020-02-26 2023-07-11 Dsp Group Ltd. Transmit receive radio frequency switch
US11569812B2 (en) 2020-06-15 2023-01-31 Psemi Corporation RF switch stack with charge control elements
US11463087B2 (en) 2020-07-31 2022-10-04 Psemi Corporation Methods and devices to generate gate induced drain leakage current sink or source path for switch FETs
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US11601126B2 (en) 2020-12-11 2023-03-07 Psemi Corporation RF switch stack with charge redistribution
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Also Published As

Publication number Publication date
FI124145B (fi) 2014-03-31
KR100916472B1 (ko) 2009-09-08
US7843280B2 (en) 2010-11-30
GB0723464D0 (en) 2008-01-09
CN101192695A (zh) 2008-06-04
GB2444406B (en) 2011-09-07
FR2909497B1 (fr) 2011-06-03
GB2444406A (en) 2008-06-04
FR2909497A1 (fr) 2008-06-06
KR20080050325A (ko) 2008-06-05
DE102007057656A1 (de) 2008-08-14
FI20075846A0 (fi) 2007-11-28
CN101192695B (zh) 2011-07-20
US20080129642A1 (en) 2008-06-05

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