FI20075846A0 - Järjestelmät, menetelmät ja laitteet suurtehokomplemetti- metallioksidipuolijohde (CMOS)-antennikytkimiä varten, joissa käytetään runkokytkentää ja alustaliitosdiodisäätöä monikerrosrakenteessa - Google Patents

Järjestelmät, menetelmät ja laitteet suurtehokomplemetti- metallioksidipuolijohde (CMOS)-antennikytkimiä varten, joissa käytetään runkokytkentää ja alustaliitosdiodisäätöä monikerrosrakenteessa

Info

Publication number
FI20075846A0
FI20075846A0 FI20075846A FI20075846A FI20075846A0 FI 20075846 A0 FI20075846 A0 FI 20075846A0 FI 20075846 A FI20075846 A FI 20075846A FI 20075846 A FI20075846 A FI 20075846A FI 20075846 A0 FI20075846 A0 FI 20075846A0
Authority
FI
Finland
Prior art keywords
cmos
systems
methods
metal oxide
devices
Prior art date
Application number
FI20075846A
Other languages
English (en)
Swedish (sv)
Other versions
FI20075846A (fi
FI124145B (fi
Inventor
Min Sik Ahn
Chang Ho Lee
Jae Joon Chang
Wang Myong Woo
Hak Sun Kim
Joy Laskar
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Publication of FI20075846A0 publication Critical patent/FI20075846A0/fi
Publication of FI20075846A publication Critical patent/FI20075846A/fi
Application granted granted Critical
Publication of FI124145B publication Critical patent/FI124145B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H36/00—Switches actuated by change of magnetic field or of electric field, e.g. by change of relative position of magnet and switch, by shielding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
FI20075846A 2006-12-01 2007-11-28 Järjestelmät, menetelmä ja laitteet suuritehoisia CMOS-antennikytkimiä varten, joissa käytetään rungonkytkentätekniikkaa ja substraattiliitosdiodin ohjausta pinorakenteessa FI124145B (fi)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86817206P 2006-12-01 2006-12-01
US86817206 2006-12-01
US94337807 2007-11-20
US11/943,378 US7843280B2 (en) 2006-12-01 2007-11-20 Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure

Publications (3)

Publication Number Publication Date
FI20075846A0 true FI20075846A0 (fi) 2007-11-28
FI20075846A FI20075846A (fi) 2008-06-02
FI124145B FI124145B (fi) 2014-03-31

Family

ID=39473578

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20075846A FI124145B (fi) 2006-12-01 2007-11-28 Järjestelmät, menetelmä ja laitteet suuritehoisia CMOS-antennikytkimiä varten, joissa käytetään rungonkytkentätekniikkaa ja substraattiliitosdiodin ohjausta pinorakenteessa

Country Status (7)

Country Link
US (1) US7843280B2 (fi)
KR (1) KR100916472B1 (fi)
CN (1) CN101192695B (fi)
DE (1) DE102007057656A1 (fi)
FI (1) FI124145B (fi)
FR (1) FR2909497B1 (fi)
GB (1) GB2444406B (fi)

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US7890063B2 (en) * 2006-10-03 2011-02-15 Samsung Electro-Mechanics Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
KR101406401B1 (ko) * 2006-11-10 2014-06-13 스카이워크스 솔루션즈, 인코포레이티드 선형성 성능이 개선된 콤팩트 저손실 고주파수 스위치
US7843280B2 (en) 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
US7817966B2 (en) * 2007-07-13 2010-10-19 Skyworks Solutions, Inc. Switching device with reduced intermodulation distortion
US7738841B2 (en) * 2007-09-14 2010-06-15 Samsung Electro-Mechanics Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
US8058922B2 (en) * 2009-07-28 2011-11-15 Qualcomm, Incorporated Switch with improved biasing
KR101153524B1 (ko) 2010-02-01 2012-06-12 한국과학기술원 Ｒｆ 스위치 회로
KR101153565B1 (ko) 2010-02-01 2012-06-12 한국과학기술원 Ｒｆ 스위치 회로
US9209784B2 (en) 2010-04-27 2015-12-08 Rf Micro Devices, Inc. Switchable capacitive elements for programmable capacitor arrays
US9673802B2 (en) 2010-04-27 2017-06-06 Qorvo Us, Inc. High power FET switch
US8766724B2 (en) 2010-12-05 2014-07-01 Rf Micro Devices (Cayman Islands), Ltd. Apparatus and method for sensing and converting radio frequency to direct current
US8629725B2 (en) 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
US8604873B2 (en) 2010-12-05 2013-12-10 Rf Micro Devices (Cayman Islands), Ltd. Ground partitioned power amplifier for stable operation
US9124354B2 (en) 2011-05-12 2015-09-01 St-Ericsson Sa Isolation and protection circuit for a receiver in a wireless communication device
CN102780475A (zh) * 2011-05-13 2012-11-14 上海华虹Nec电子有限公司 射频收发开关电路
US8909171B2 (en) * 2011-07-19 2014-12-09 Samsung Electro-Mechanics Co., Ltd. RF antenna switch circuit, high frequency antenna component, and mobile communication device
US9035716B2 (en) * 2012-01-20 2015-05-19 Samsung Electro-Mechanics Co., Ltd. High frequency switch
KR20130127782A (ko) * 2012-05-15 2013-11-25 삼성전기주식회사 스위칭 회로 및 이를 포함하는 무선통신 시스템
US8843083B2 (en) 2012-07-09 2014-09-23 Rf Micro Devices (Cayman Islands), Ltd. CMOS switching circuitry of a transmitter module
US8731490B2 (en) 2012-07-27 2014-05-20 Rf Micro Devices (Cayman Islands), Ltd. Methods and circuits for detuning a filter and matching network at the output of a power amplifier
US9312820B2 (en) 2012-09-23 2016-04-12 Dsp Group Ltd. CMOS based TX/RX switch
WO2014052413A1 (en) * 2012-09-25 2014-04-03 Dsp Group Inc. Cmos based rf antenna switch
KR101952857B1 (ko) * 2013-12-20 2019-02-27 삼성전기주식회사 스위칭 회로 및 이를 포함하는 고주파 스위치
CN104935316B (zh) * 2014-03-21 2018-08-31 博通集成电路（上海）股份有限公司 用于控制收发通路切换的射频开关、射频系统和操作方法
CN105227167B (zh) * 2015-09-21 2018-09-25 温州大学 一种cmos开关电路
CN106656127B (zh) * 2016-10-12 2020-09-15 上海华虹宏力半导体制造有限公司 射频开关电路
CN106888009B (zh) * 2017-02-14 2021-03-23 上海华虹宏力半导体制造有限公司 差分收发射频开关和射频终端
US10211830B2 (en) 2017-04-28 2019-02-19 Qualcomm Incorporated Shunt termination path
US11700028B2 (en) * 2020-02-26 2023-07-11 Dsp Group Ltd. Transmit receive radio frequency switch
US11569812B2 (en) 2020-06-15 2023-01-31 Psemi Corporation RF switch stack with charge control elements
US11671090B2 (en) 2020-07-31 2023-06-06 Psemi Corporation Switch FET body current management devices and methods
US11463087B2 (en) 2020-07-31 2022-10-04 Psemi Corporation Methods and devices to generate gate induced drain leakage current sink or source path for switch FETs
US11601126B2 (en) 2020-12-11 2023-03-07 Psemi Corporation RF switch stack with charge redistribution
US11923838B2 (en) 2022-06-17 2024-03-05 Psemi Corporation Inductive drain and/or body ladders in RF switch stacks

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Also Published As

Publication number Publication date
FR2909497A1 (fr) 2008-06-06
GB2444406A (en) 2008-06-04
CN101192695A (zh) 2008-06-04
GB2444406B (en) 2011-09-07
DE102007057656A1 (de) 2008-08-14
FR2909497B1 (fr) 2011-06-03
KR100916472B1 (ko) 2009-09-08
US20080129642A1 (en) 2008-06-05
CN101192695B (zh) 2011-07-20
US7843280B2 (en) 2010-11-30
FI20075846A (fi) 2008-06-02
FI124145B (fi) 2014-03-31
GB0723464D0 (en) 2008-01-09
KR20080050325A (ko) 2008-06-05

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