JP2017163139A - 撮像装置、モジュール、および電子機器 - Google Patents
撮像装置、モジュール、および電子機器 Download PDFInfo
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- JP2017163139A JP2017163139A JP2017037883A JP2017037883A JP2017163139A JP 2017163139 A JP2017163139 A JP 2017163139A JP 2017037883 A JP2017037883 A JP 2017037883A JP 2017037883 A JP2017037883 A JP 2017037883A JP 2017163139 A JP2017163139 A JP 2017163139A
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- conductor
- oxide semiconductor
- insulator
- transistor
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- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Inorganic materials [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01L27/144—Devices controlled by radiation
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- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01L27/144—Devices controlled by radiation
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- H01L27/14636—Interconnect structures
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- H01L27/144—Devices controlled by radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
本実施の形態では、本発明の一態様に用いることのできるOSトランジスタについて図面を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態2に示したトランジスタの構成要素について詳細を説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体の材料について説明する。
以下に、本発明に係る酸化物半導体について説明する。
以下では、本発明の一態様に用いることのできる酸化物半導体の構造について説明する。
本実施の形態では、イメージセンサチップを収めたパッケージおよびカメラモジュールの一例について説明する。当該イメージセンサチップには、本発明の一態様の撮像装置の構成を用いることができる。
本発明の一態様に係る撮像装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置または画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラなどのカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤーなど)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図40に示す。
10a 画素
10b 画素
10c 画素
12 ロードライバ回路
13 CDS回路
14 A/D変換回路
15 カラムドライバ回路
16 画素アレイ
17 コンパレータ回路
18 カウンター回路
19 基板
21 光電変換素子
31 領域
32 領域
33 トランジスタ
34 トランジスタ
35 トランジスタ
41 領域
51 配線
53 配線
54 配線
60 絶縁体
61 導電体
62 導電体
63 絶縁体
64 半導体
64a 半導体
64b 半導体
64c 半導体
65 導電体
66 導電体
67 絶縁体
68 導電体
69 導電体
70 絶縁体
71 導電体
72 導電体
73 導電体
74 導電体
75 導電体
76 導電体
78 導電体
79 導電体
81 トランジスタ
82 トランジスタ
83 トランジスタ
84 容量素子
85 容量素子
91 配線
92 配線
93 配線
100 絶縁体
101 絶縁体
102 絶縁体
103 絶縁体
104 絶縁体
105 絶縁体
110 基板
111 配線
113 配線
120 導電体
121 導電体
130 シリコン基板
131 トランジスタ
132 トランジスタ
140 活性層
220 p+領域
230 p−領域
240 n型領域
250 p+領域
261 光電変換層
262 透光性導電体
263 半導体
264 半導体
265 半導体
266 電極
266a 導電体
266b 導電体
267 隔壁
268 正孔注入阻止層
269 電子注入阻止層
271 配線
271a 導電体
271b 導電体
288 配線
301 トランジスタ
302 トランジスタ
303 トランジスタ
304 トランジスタ
305 トランジスタ
306 トランジスタ
307 トランジスタ
310 基板
320 導電体
330 絶縁体
340 酸化物半導体
340a 酸化物半導体
340b 酸化物半導体
340c 酸化物半導体
340d 酸化物半導体
350 導電体
351 導電体
352 領域
353 領域
354 導電体
355 導電体
356 絶縁体
357 絶縁体
360 絶縁体
370 導電体
370a 導電体
370b 導電体
380 絶縁体
390 絶縁体
810 パッケージ基板
811 パッケージ基板
820 カバーガラス
821 レンズカバー
830 接着剤
835 レンズ
840 バンプ
841 ランド
850 イメージセンサチップ
851 イメージセンサチップ
860 電極パッド
861 電極パッド
870 ワイヤ
871 ワイヤ
880 スルーホール
885 ランド
890 ICチップ
901 筐体
902 筐体
903 表示部
904 表示部
905 マイク
906 スピーカー
907 操作キー
908 スタイラス
909 カメラ
911 筐体
912 表示部
919 カメラ
931 筐体
932 表示部
933 リストバンド
935 ボタン
936 竜頭
939 カメラ
951 筐体
952 レンズ
953 支持部
961 筐体
962 シャッターボタン
963 マイク
965 レンズ
967 発光部
971 筐体
972 筐体
973 表示部
974 操作キー
975 レンズ
976 接続部
1100 層
1200 層
1300 層
1400 層
1430 遮光層
1440 マイクロレンズアレイ
1450a 光学変換層
1450b 光電変換層
1450c 光電変換層
Claims (8)
- 第1の導電体と、第2の導電体と、第3の導電体と、第4の導電体と、第5の導電体と、第1の絶縁体と、第2の絶縁体と、第1の酸化物半導体と、第1の光電変換素子と、トランジスタと、を有し、
前記第1の導電体は、前記第1の絶縁体の下面および側面と接し、
前記第1の絶縁体は、前記第1の酸化物半導体の下面と接し、
前記第1の酸化物半導体は、前記第2の導電体の下面と接し、
前記第1の酸化物半導体は、前記第3の導電体の下面と接し、
前記第1の酸化物半導体は、前記第2の絶縁体の下面と接し、
前記第2の導電体は、前記第2の絶縁体の下面および側面と接し、
前記第3の導電体は、前記第2の絶縁体の下面および側面と接し、
前記第2の絶縁体は、前記第4の導電体の下面と接し、
前記第2の絶縁体は、前記第5の導電体の下面と接し、
前記第1の導電体は、前記第4の導電体と重なる領域を有し、
前記第1の導電体は、前記第5の導電体と重なる領域を有し、
前記第2の導電体は、前記第4の導電体と重なる領域を有し、
前記第3の導電体は、前記第5の導電体と重なる領域を有し、
前記第2の導電体は、前記第1の光電変換素子の一方の電極と電気的に接続され、
前記第3の導電体は、前記トランジスタのゲートと電気的に接続されることを特徴とする撮像装置。 - 請求項1において、
第6の導電体と、第7の導電体と、を有し、
前記第6の導電体は前記第1の絶縁体の下面および側面と接し、
前記第7の導電体は前記第1の絶縁体の下面および側面と接し、
前記第6の導電体は前記第4の導電体と重なる領域を有し、
前記第7の導電体は前記第5の導電体と重なる領域を有することを特徴とする撮像装置。 - 請求項1または2において、
前記第1の酸化物半導体は、Inと、Znと、M(MはAl、Ga、YまたはSn)と、を有することを特徴とする撮像装置。 - 請求項1乃至3のいずれか一項において、
第8の導電体と、第9の導電体と、第10の導電体と、第11の導電体と、第12の導電体と、第3の絶縁体と、第4の絶縁体と、第2の酸化物半導体と、第2の光電変換素子と、を有し、
前記第8の導電体は、前記第3の絶縁体の下面および側面と接し、
前記第3の絶縁体は、前記第2の酸化物半導体の下面と接し、
前記第2の酸化物半導体は、前記第9の導電体の下面と接し、
前記第2の酸化物半導体は、前記第10の導電体の下面と接し、
前記第2の酸化物半導体は、前記第4の絶縁体の下面と接し、
前記第9の導電体は、前記第4の絶縁体の下面および側面と接し、
前記第10の導電体は、前記第4の絶縁体の下面および側面と接し、
前記第4の絶縁体は、前記第11の導電体の下面と接し、
前記第4の絶縁体は、前記第12の導電体の下面と接し、
前記第8の導電体は、前記第11の導電体と重なる領域を有し、
前記第8の導電体は、前記第12の導電体と重なる領域を有し、
前記第9の導電体は、前記第11の導電体と重なる領域を有し、
前記第10の導電体は、前記第12の導電体と重なる領域を有し、
前記第9の導電体は、前記第2の光電変換素子の一方の電極と電気的に接続され、
前記第10の導電体は、前記トランジスタのゲートと電気的に接続されることを特徴とする撮像装置。 - 請求項4において、
第13の導電体と、第14の導電体と、を有し、
前記第13の導電体は前記第3の絶縁体の下面および側面と接し、
前記第14の導電体は前記第3の絶縁体の下面および側面と接し、
前記第13の導電体は前記第11の導電体と重なる領域を有し、
前記第14の導電体は前記第12の導電体と重なる領域を有することを特徴とする撮像装置。 - 請求項4または5において、
前記第2の酸化物半導体は、Inと、Znと、M(MはAl、Ga、YまたはSn)と、を有することを特徴とする撮像装置。 - 請求項1乃至6のいずれか一項に記載の撮像装置と、
レンズと、
を有することを特徴とするモジュール。 - 請求項1乃至6のいずれか一項に記載の撮像装置と、
表示装置と、
を有することを特徴とする電子機器。
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