JP2009283929A - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

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JP2009283929A
JP2009283929A JP2009102673A JP2009102673A JP2009283929A JP 2009283929 A JP2009283929 A JP 2009283929A JP 2009102673 A JP2009102673 A JP 2009102673A JP 2009102673 A JP2009102673 A JP 2009102673A JP 2009283929 A JP2009283929 A JP 2009283929A
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layer
impact
integrated circuit
semiconductor device
semiconductor integrated
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JP2009283929A5 (enExample
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Shingo Eguchi
晋吾 江口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L2924/30105—Capacitance

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2009102673A 2008-04-25 2009-04-21 半導体装置及び半導体装置の作製方法 Withdrawn JP2009283929A (ja)

Priority Applications (1)

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JP2009102673A JP2009283929A (ja) 2008-04-25 2009-04-21 半導体装置及び半導体装置の作製方法

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JP2008114882 2008-04-25
JP2008114883 2008-04-25
JP2009102673A JP2009283929A (ja) 2008-04-25 2009-04-21 半導体装置及び半導体装置の作製方法

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JP2009283929A5 JP2009283929A5 (enExample) 2012-04-19

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JP2009102673A Withdrawn JP2009283929A (ja) 2008-04-25 2009-04-21 半導体装置及び半導体装置の作製方法
JP2014168121A Expired - Fee Related JP5833719B2 (ja) 2008-04-25 2014-08-21 半導体装置および半導体装置の作製方法
JP2015212569A Expired - Fee Related JP6177854B2 (ja) 2008-04-25 2015-10-29 半導体装置
JP2017136108A Active JP6223623B1 (ja) 2008-04-25 2017-07-12 半導体装置
JP2017193625A Active JP6446517B2 (ja) 2008-04-25 2017-10-03 半導体装置
JP2018226787A Expired - Fee Related JP6665264B2 (ja) 2008-04-25 2018-12-03 半導体装置
JP2020025814A Active JP6842579B2 (ja) 2008-04-25 2020-02-19 半導体装置
JP2021024760A Active JP7150908B2 (ja) 2008-04-25 2021-02-19 半導体装置
JP2022154791A Active JP7606494B2 (ja) 2008-04-25 2022-09-28 半導体装置
JP2024218572A Withdrawn JP2025038909A (ja) 2008-04-25 2024-12-13 半導体装置

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JP2014168121A Expired - Fee Related JP5833719B2 (ja) 2008-04-25 2014-08-21 半導体装置および半導体装置の作製方法
JP2015212569A Expired - Fee Related JP6177854B2 (ja) 2008-04-25 2015-10-29 半導体装置
JP2017136108A Active JP6223623B1 (ja) 2008-04-25 2017-07-12 半導体装置
JP2017193625A Active JP6446517B2 (ja) 2008-04-25 2017-10-03 半導体装置
JP2018226787A Expired - Fee Related JP6665264B2 (ja) 2008-04-25 2018-12-03 半導体装置
JP2020025814A Active JP6842579B2 (ja) 2008-04-25 2020-02-19 半導体装置
JP2021024760A Active JP7150908B2 (ja) 2008-04-25 2021-02-19 半導体装置
JP2022154791A Active JP7606494B2 (ja) 2008-04-25 2022-09-28 半導体装置
JP2024218572A Withdrawn JP2025038909A (ja) 2008-04-25 2024-12-13 半導体装置

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US (3) US8133749B2 (enExample)
JP (10) JP2009283929A (enExample)
KR (2) KR101563138B1 (enExample)
CN (1) CN102067281B (enExample)
TW (3) TWI549186B (enExample)
WO (1) WO2009131132A1 (enExample)

Cited By (8)

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JP2012138532A (ja) * 2010-12-28 2012-07-19 Mitsubishi Electric Corp 薄膜トランジスタ及びその製造方法
CN103187131A (zh) * 2011-12-28 2013-07-03 北京有色金属研究总院 一种高导热绝缘复合材料及其制备方法
JP2015233130A (ja) * 2014-05-16 2015-12-24 株式会社半導体エネルギー研究所 半導体基板および半導体装置の作製方法
TWI576943B (zh) * 2015-06-12 2017-04-01 朋程科技股份有限公司 功率二極體裝置之處理方法
JP2017108151A (ja) * 2009-12-04 2017-06-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2018190837A (ja) * 2017-05-08 2018-11-29 株式会社ディスコ ゲッタリング層形成方法
JP2018190835A (ja) * 2017-05-08 2018-11-29 株式会社ディスコ ゲッタリング層形成方法
CN115831847A (zh) * 2021-09-17 2023-03-21 铠侠股份有限公司 半导体装置、半导体装置的制造方法及衬底的再利用方法

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TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
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