JP4716081B2 - 液晶表示装置の製造方法 - Google Patents
液晶表示装置の製造方法 Download PDFInfo
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- JP4716081B2 JP4716081B2 JP2004122497A JP2004122497A JP4716081B2 JP 4716081 B2 JP4716081 B2 JP 4716081B2 JP 2004122497 A JP2004122497 A JP 2004122497A JP 2004122497 A JP2004122497 A JP 2004122497A JP 4716081 B2 JP4716081 B2 JP 4716081B2
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- 239000010410 layer Substances 0.000 claims description 159
- 239000010408 film Substances 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 61
- 239000010409 thin film Substances 0.000 claims description 60
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- 239000011521 glass Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000010453 quartz Substances 0.000 claims description 6
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- 238000010030 laminating Methods 0.000 claims description 2
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 29
- -1 polyethylene terephthalate Polymers 0.000 description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
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- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 229910052750 molybdenum Inorganic materials 0.000 description 16
- 239000011733 molybdenum Substances 0.000 description 16
- 239000011112 polyethylene naphthalate Substances 0.000 description 15
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 14
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- 238000004544 sputter deposition Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 description 7
- 239000005020 polyethylene terephthalate Substances 0.000 description 7
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- 238000002161 passivation Methods 0.000 description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
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- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- JGRGMDZIEXDEQT-UHFFFAOYSA-N [Cl].[Xe] Chemical compound [Cl].[Xe] JGRGMDZIEXDEQT-UHFFFAOYSA-N 0.000 description 1
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- 239000004760 aramid Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
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- 230000005587 bubbling Effects 0.000 description 1
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- 238000003618 dip coating Methods 0.000 description 1
- 238000001810 electrochemical catalytic reforming Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- CUPFNGOKRMWUOO-UHFFFAOYSA-N hydron;difluoride Chemical compound F.F CUPFNGOKRMWUOO-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Images
Landscapes
- Liquid Crystal (AREA)
Description
る工程と、対向基板を形成する工程と、アクティブ基板と対向基板との間に液晶を封入す
る工程とを備え、アクティブ基板を形成する工程は、第1基板上に偏光膜を含む薄膜デバ
イス層を形成した後に薄膜デバイス層上に第1接着層を介してもしくは被覆層と第1接着
層とを介して第2基板を接着する工程と、化学処理および機械的研磨処理および紫外線照
射処理の少なくとも一つの処理を含む工程により第1基板を完全または部分的に分離また
は除去する工程と、薄膜デバイス層の第1基板が形成されていた側または部分的に残した
第1基板を、第2接着層を介して複屈折を有するプラスチック基板からなる第3基板に接
着する工程と、第2基板を分離または除去する工程とを含み、対向基板を形成する工程は、複屈折を有するプラスチック基板からなる支持基板に偏光膜を形成する工程を含み、アクティブ基板と対向基板との間に液晶を封入する工程は、アクティブ基板と対向基板とを、液晶側にアクティブ基板および対向基板の偏光膜が配置されるように張り合わせる工程と、アクティブ基板と対向基板との間に液晶を注入する工程とを含むものである。
Claims (3)
- 薄膜デバイス層を有するアクティブ基板を形成する工程と、対向基板を形成する工程と、前記アクティブ基板と前記対向基板との間に液晶を封入する工程とを備え、
前記アクティブ基板を形成する工程は、
第1基板上に偏光膜を含む薄膜デバイス層を形成した後に前記薄膜デバイス層上に第1 接着層を介してもしくは被覆層と第1接着層とを介して第2基板を接着する工程と、
化学処理および機械的研磨処理および紫外線照射処理の少なくとも一つの処理を含む工
程により前記第1基板を完全または部分的に分離または除去する工程と、
前記薄膜デバイス層の第1基板が形成されていた側または部分的に残した第1基板を、
第2接着層を介して複屈折を有するプラスチック基板からなる第3基板に接着する工程と、
前記第2基板を分離または除去する工程とを含み、
前記対向基板を形成する工程は、
複屈折を有するプラスチック基板からなる支持基板に偏光膜を形成する工程を含み、
前記アクティブ基板と前記対向基板との間に液晶を封入する工程は、
前記アクティブ基板と前記対向基板とを、前記液晶側に前記アクティブ基板および前記対向基板の前記偏光膜が配置されるように張り合わせる工程と、
前記アクティブ基板と前記対向基板との間に液晶を注入する工程とを含む
液晶表示装置の製造方法。 - 前記偏光膜は前記リオトロピック液晶を塗布した後に硬化させることによって形成される、請求項1に記載の液晶表示装置の製造方法。
- 前記第1基板としてガラス基板または石英基板を用いる、請求項1に記載の液晶表示装置の製造方法。
Priority Applications (1)
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JP2004122497A JP4716081B2 (ja) | 2004-04-19 | 2004-04-19 | 液晶表示装置の製造方法 |
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JP2004122497A JP4716081B2 (ja) | 2004-04-19 | 2004-04-19 | 液晶表示装置の製造方法 |
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JP2005308848A JP2005308848A (ja) | 2005-11-04 |
JP4716081B2 true JP4716081B2 (ja) | 2011-07-06 |
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JP2004122497A Expired - Lifetime JP4716081B2 (ja) | 2004-04-19 | 2004-04-19 | 液晶表示装置の製造方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101393632B1 (ko) | 2007-05-02 | 2014-05-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판, 이를 이용한 표시 장치 및 표시장치 제조 방법 |
JP2009115865A (ja) * | 2007-11-02 | 2009-05-28 | Hitachi Displays Ltd | 液晶表示装置 |
CN102067281B (zh) * | 2008-04-25 | 2013-06-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
JP6146489B1 (ja) * | 2016-01-06 | 2017-06-14 | 大日本印刷株式会社 | 調光フィルム及び調光フィルムの製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61500816A (ja) * | 1983-12-22 | 1986-04-24 | ポラロイド コ−ポレ−シヨン | 液晶表示器 |
JP2001201767A (ja) * | 2000-01-20 | 2001-07-27 | Internatl Business Mach Corp <Ibm> | 液晶表示パネルおよび液晶表示装置 |
JP2001305526A (ja) * | 2000-04-25 | 2001-10-31 | Seiko Epson Corp | 液晶装置および電子機器 |
WO2002084739A1 (en) * | 2001-04-13 | 2002-10-24 | Sony Corporation | Thin film-device manufacturing method, and semiconductor device |
-
2004
- 2004-04-19 JP JP2004122497A patent/JP4716081B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61500816A (ja) * | 1983-12-22 | 1986-04-24 | ポラロイド コ−ポレ−シヨン | 液晶表示器 |
JP2001201767A (ja) * | 2000-01-20 | 2001-07-27 | Internatl Business Mach Corp <Ibm> | 液晶表示パネルおよび液晶表示装置 |
JP2001305526A (ja) * | 2000-04-25 | 2001-10-31 | Seiko Epson Corp | 液晶装置および電子機器 |
WO2002084739A1 (en) * | 2001-04-13 | 2002-10-24 | Sony Corporation | Thin film-device manufacturing method, and semiconductor device |
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JP2005308848A (ja) | 2005-11-04 |
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