JP2018190837A - ゲッタリング層形成方法 - Google Patents
ゲッタリング層形成方法 Download PDFInfo
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- JP2018190837A JP2018190837A JP2017092459A JP2017092459A JP2018190837A JP 2018190837 A JP2018190837 A JP 2018190837A JP 2017092459 A JP2017092459 A JP 2017092459A JP 2017092459 A JP2017092459 A JP 2017092459A JP 2018190837 A JP2018190837 A JP 2018190837A
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- wafer
- gettering layer
- metal salt
- back surface
- grinding
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- 238000005247 gettering Methods 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 150000003839 salts Chemical class 0.000 claims abstract description 25
- 239000012266 salt solution Substances 0.000 claims abstract description 15
- 239000000243 solution Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 51
- 238000000227 grinding Methods 0.000 description 46
- 238000005498 polishing Methods 0.000 description 39
- 239000010949 copper Substances 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- 230000001681 protective effect Effects 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000012086 standard solution Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000006061 abrasive grain Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000011135 tin Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000002411 adverse Effects 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical class [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】表面にデバイスが形成されたウェーハの裏面にゲッタリング層を形成するゲッタリング層形成方法であって、ウェーハの裏面に金属塩の溶液を塗布する塗布ステップと、塗布ステップを実施した後、ウェーハを加熱し、塗布された溶液中の金属塩を裏面側に拡散させてゲッタリング層を形成する拡散ステップと、を含む。
【選択図】図3
Description
レーザビームの波長:257nm
レーザビームの出力:1W
繰り返し周波数:200kHz
照射スポットの直径:50μm
照射間隔(照射スポットの中心間の距離):20μm
11a 表面
11b 裏面
13 分割予定ライン(ストリート)
15 デバイス
21 保護部材
21a 表面
21b 裏面
31 溶液
33 被膜
35 ゲッタリング層
41 レーザビーム
2 研削装置
4 チャックテーブル
4a 保持面
6 研削ユニット
8 スピンドル
10 マウント
12 研削ホイール
14 ホイール基台
16 研削砥石
22 研磨装置
24 チャックテーブル
24a 保持面
26 研磨ユニット
28 スピンドル
30 マウント
32 研磨パッド
42 スピンコーター
44 スピンナテーブル
44a 保持面
46 ノズル
52 レーザ照射装置
54 チャックテーブル
54a 保持面
56 レーザ照射ユニット
Claims (4)
- 表面にデバイスが形成されたウェーハの裏面にゲッタリング層を形成するゲッタリング層形成方法であって、
ウェーハの裏面に金属塩の溶液を塗布する塗布ステップと、
該塗布ステップを実施した後、ウェーハを加熱し、塗布された該溶液中の該金属塩を該裏面側に拡散させてゲッタリング層を形成する拡散ステップと、を備えることを特徴とするゲッタリング層形成方法。 - 該拡散ステップでは、ウェーハに対して吸収性を有する波長のレーザビームを照射することによってウェーハを加熱し、該金属塩を拡散させることを特徴とする請求項1に記載のゲッタリング層形成方法。
- 該金属塩は2価の金属を含み、該ゲッタリング層は1cm2当たり1×1013個以上の該金属原子を含有することを特徴とする請求項1又は請求項2に記載のゲッタリング層形成方法。
- 該金属塩は3価の金属を含み、該ゲッタリング層は1cm2当たり1×1012個以上の該金属原子を含有することを特徴とする請求項1又は請求項2に記載のゲッタリング層形成方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017092459A JP6855125B2 (ja) | 2017-05-08 | 2017-05-08 | ゲッタリング層形成方法 |
TW107112078A TWI800507B (zh) | 2017-05-08 | 2018-04-09 | 去疵層形成方法 |
CN201810389620.7A CN108878279B (zh) | 2017-05-08 | 2018-04-27 | 去疵层形成方法 |
KR1020180049846A KR102392425B1 (ko) | 2017-05-08 | 2018-04-30 | 게터링층 형성 방법 |
US15/971,538 US10546758B2 (en) | 2017-05-08 | 2018-05-04 | Gettering layer forming method |
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Application Number | Priority Date | Filing Date | Title |
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JP2017092459A JP6855125B2 (ja) | 2017-05-08 | 2017-05-08 | ゲッタリング層形成方法 |
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Publication Number | Publication Date |
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JP2018190837A true JP2018190837A (ja) | 2018-11-29 |
JP6855125B2 JP6855125B2 (ja) | 2021-04-07 |
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JP2017092459A Active JP6855125B2 (ja) | 2017-05-08 | 2017-05-08 | ゲッタリング層形成方法 |
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US (1) | US10546758B2 (ja) |
JP (1) | JP6855125B2 (ja) |
KR (1) | KR102392425B1 (ja) |
CN (1) | CN108878279B (ja) |
TW (1) | TWI800507B (ja) |
Citations (7)
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JPS5655040A (en) * | 1979-10-11 | 1981-05-15 | Matsushita Electric Ind Co Ltd | Treatment of semiconductor substrate |
JPH04155930A (ja) * | 1990-10-19 | 1992-05-28 | Nec Corp | 半導体装置の製造方法 |
JPH10284453A (ja) * | 1997-04-03 | 1998-10-23 | Pure Retsukusu:Kk | 半導体基板内部の洗浄方法 |
JP2004214507A (ja) * | 2003-01-07 | 2004-07-29 | Sharp Corp | 半導体装置およびその製造方法 |
JP2009283929A (ja) * | 2008-04-25 | 2009-12-03 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP2011100996A (ja) * | 2009-10-09 | 2011-05-19 | Sumco Corp | 半導体基板内部の重金属の除去方法 |
JP2015130397A (ja) * | 2014-01-07 | 2015-07-16 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
Family Cites Families (6)
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---|---|---|---|---|
GB1088958A (en) * | 1963-09-23 | 1967-10-25 | Ass Elect Ind | Improvements relating to the treatment of semi-conductor materials |
AU2001241919A1 (en) * | 2000-03-03 | 2001-09-17 | Midwest Research Institute | A1 processing for impurity gettering in silicon |
US8846500B2 (en) * | 2010-12-13 | 2014-09-30 | Semiconductor Components Industries, Llc | Method of forming a gettering structure having reduced warpage and gettering a semiconductor wafer therewith |
JP6068074B2 (ja) * | 2012-09-20 | 2017-01-25 | 株式会社ディスコ | ゲッタリング層形成方法 |
JP6208498B2 (ja) | 2013-08-29 | 2017-10-04 | 株式会社ディスコ | 研磨パッドおよびウエーハの加工方法 |
JP6192778B2 (ja) | 2016-07-07 | 2017-09-06 | 株式会社ディスコ | シリコンウエーハの加工装置 |
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- 2017-05-08 JP JP2017092459A patent/JP6855125B2/ja active Active
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- 2018-04-09 TW TW107112078A patent/TWI800507B/zh active
- 2018-04-27 CN CN201810389620.7A patent/CN108878279B/zh active Active
- 2018-04-30 KR KR1020180049846A patent/KR102392425B1/ko active IP Right Grant
- 2018-05-04 US US15/971,538 patent/US10546758B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5655040A (en) * | 1979-10-11 | 1981-05-15 | Matsushita Electric Ind Co Ltd | Treatment of semiconductor substrate |
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TW201843726A (zh) | 2018-12-16 |
CN108878279A (zh) | 2018-11-23 |
CN108878279B (zh) | 2024-02-20 |
TWI800507B (zh) | 2023-05-01 |
KR102392425B1 (ko) | 2022-05-02 |
US10546758B2 (en) | 2020-01-28 |
KR20180123435A (ko) | 2018-11-16 |
JP6855125B2 (ja) | 2021-04-07 |
US20180323081A1 (en) | 2018-11-08 |
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