TW201930005A - 工件的加工方法以及加工裝置 - Google Patents

工件的加工方法以及加工裝置 Download PDF

Info

Publication number
TW201930005A
TW201930005A TW107147001A TW107147001A TW201930005A TW 201930005 A TW201930005 A TW 201930005A TW 107147001 A TW107147001 A TW 107147001A TW 107147001 A TW107147001 A TW 107147001A TW 201930005 A TW201930005 A TW 201930005A
Authority
TW
Taiwan
Prior art keywords
workpiece
resin
grinding
stone
chuck table
Prior art date
Application number
TW107147001A
Other languages
English (en)
Other versions
TWI804551B (zh
Inventor
渡邊真也
山端一郎
鈴木克彥
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201930005A publication Critical patent/TW201930005A/zh
Application granted granted Critical
Publication of TWI804551B publication Critical patent/TWI804551B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B3/00Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • B24B37/345Feeding, loading or unloading work specially adapted to lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/005Feeding or manipulating devices specially adapted to grinding machines
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/007Cleaning of grinding wheels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10Single-purpose machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31058After-treatment of organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1005Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to condition of liquid or other fluent material already applied to the surface, e.g. coating thickness, weight or pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/12Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application

Abstract

[課題]本發明可不增加研削的步驟數而高效率地加工工件。[解決手段]本發明之工件的加工方法包含:樹脂被覆步驟,於工件W的正面Wa上被覆樹脂100;樹脂硬化步驟,對所被覆之樹脂100照射紫外線以使其硬化;樹脂研削步驟,以研削磨石46將硬化之樹脂100a進行研削以使其平坦化;以及工件研削步驟,以卡盤台8保持經平坦化之工件W的樹脂100a側,並以研削磨石46將工件W的背面Wb進行研削。樹脂研削步驟中係一邊將附著於研削磨石46的樹脂100a進行清洗一邊實施研削,故可在同一裝置內研削被覆於工件W之正面Wa的樹脂100a與工件W的背面Wb。

Description

工件的加工方法以及加工裝置
本發明係關於一種將工件進行加工的工件的加工方法以及加工裝置。
在半導體元件的製程中,係於工件的正面形成格子狀的切割道,並在由切割道所劃分的區域中形成IC、LSI等的元件。將工件的背面進行研削而薄化至預定厚度後,藉由切削裝置等沿著切割道進行分割,藉此製造各個半導體元件晶片。在將工件進行研削而薄化時,為了保護元件而於工件的正面被覆樹脂。為了提升所被覆之樹脂的厚度精確度,而實施將被覆於工件正面之樹脂進行研削以使其平坦化的步驟(例如,參照下述專利文獻1)。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2009-43931號公報
[發明所欲解決的課題] 然而,在實施上述步驟而將被覆於工件正面之樹脂進行研削後,係以其他研削裝置實施研削工件背面的步驟,故具有研削的步驟數增加的課題。
因此,本發明之目的在於提供一種工件的加工方法及加工裝置,可不增加研削的步驟數而高效率地加工工件。
[解決課題的技術手段] 根據本發明之一態樣,提供一種工件的加工方法,進行被覆於工件正面之樹脂的研削以及工件背面的研削,該工件在該正面上形成格子狀的多條分割預定線所劃分的各區域中形成有元件,該工件的加工方法具備:樹脂被覆步驟,於工件的該正面被覆該樹脂;樹脂硬化步驟,對所被覆之該樹脂照射紫外線以使其硬化;樹脂研削步驟,以研削磨石將硬化之該樹脂進行研削以使其平坦化;以及工件研削步驟,以卡盤台保持經平坦化之工件的該樹脂側,並以研削磨石將工件的該背面進行研削;該樹脂研削步驟中,係一邊將附著於該研削磨石的該樹脂進行清洗一邊實施研削。
較佳係在上述樹脂研削步驟中,一邊從清洗噴嘴朝向上述研削磨石噴射清洗水,將附著於該研削磨石的上述樹脂進行清洗,一邊以該研削磨石研削該樹脂。
較佳係在實施上述樹脂研削步驟後,使用相對於卡盤台將工件搬入搬出以及使從該卡盤台搬出之工件的正反面反轉之搬送單元,以使工件的正反面反轉;在該樹脂研削步驟與上述工件研削步驟中使用同一研削磨石。
根據本發明之另一態樣,提供一種加工裝置,用於加工工件,該工件在正面上形成格子狀的多條分割預定線所劃分的各區域中形成有元件,而該加工裝置具備:卡盤台,保持工件;研削單元,其具備研削磨石,將正面被覆有樹脂之工件的背面與被覆於該正面的樹脂進行研削;以及搬送單元,相對於該卡盤台將工件搬入搬出以及使從該卡盤台搬出之工件的正反面反轉。
較佳係測量藉由上述研削磨石研削後之上述樹脂的樹脂厚度,使工件的背面薄化至預定厚度。
較佳係加工裝置進一步具備朝向上述研削磨石噴射清洗水的清洗噴嘴,一邊將附著於該研削磨石的上述樹脂進行清洗一邊以該研削磨石研削該樹脂。
較佳係使用上述搬送單元使工件的正反面反轉,並使用同一研削磨石實施上述樹脂的研削與工件之該背面的研削。
[發明功效] 根據本發明,可在同一裝置內研削被覆於工件正面的樹脂與工件的背面。因此,根據本發明,不會增加研削的步驟數,故可高效率地實施工件的加工。
上述樹脂研削步驟中,係一邊從清洗噴嘴朝向研削磨石噴射清洗水,將附著於研削磨石的樹脂進行清洗,一邊實施樹脂的研削,因此在樹脂研削步驟完成後,樹脂不會殘留於研削磨石上。藉此,即便使用同一研削磨石實施工件研削步驟,亦可良好地將工件薄化。
在實施樹脂研削步驟後,可使用相對於卡盤台將工件搬入搬出以及使從該卡盤台搬出之工件的正反面反轉的搬送單元使工件的正反面反轉,故可在樹脂研削步驟與工件研削步驟中使用同一研削磨石,進而提升加工效率。
又,本發明之加工裝置具備:卡盤台,保持工件;研削單元,其具備研削磨石,將正面被覆有樹脂之工件的背面與被覆於正面的樹脂進行研削;以及搬送單元,相對於卡盤台將工件搬入搬出以及使從卡盤台搬出之工件的正反面反轉,因此可在同一裝置內實施被覆於工件正面之樹脂的研削與工件背面的研削。因此,根據本發明,不會增加研削的步驟數,故可高效率地實施工件的加工。
根據上述加工裝置,可測量藉由上述研削磨石研削後之上述樹脂的樹脂厚度,使工件的背面薄化至預定厚度,故可更高精度地加工工件。
上述加工裝置具備朝向研削磨石噴射清洗水的清洗噴嘴,故可一邊從清洗噴嘴朝向研削磨石噴射清洗水,將附著於研削磨石的樹脂進行清洗,一邊實施樹脂的研削,因此即使將工件正面所被覆的樹脂進行研削而使其平坦化後,樹脂亦不會殘留於研削磨石上。因此,可使用同一研削磨石研削工件的背面。
又,可使用上述搬送單元使工件的正反面反轉,故可使用同一研削磨石實施樹脂的研削與工件背面的研削,進而提升加工效率。
1 加工裝置 圖1所示之加工裝置1係用於工件W之研削加工的研削裝置之一例。工件W為圓形板狀的工件之一例,其正面Wa上,在形成格子狀的多條分割預定線S所劃分的多個區域中分別形成有元件D。工件W的正面Wa與相反側的背面Wb成為實施研削加工的被加工面。本實施形態所示之工件W,例如係由矽晶圓所構成。
加工裝置1具有在Y軸方向上延伸的裝置底座2,在裝置底座2的Y軸方向前側配設有容納研削前之工件W的卡匣4a及容納研削後之工件W的卡匣4b。在卡匣4a及卡匣4b的附近配設有搬出搬入手段5,將研削前的工件W從卡匣4a搬出,同時將研削後的工件W搬入卡匣4b。在搬出搬入手段5的可動範圍內配設有將研削前的工件W定位於預定位置的對位手段6,及將加工後的工件W進行清洗的清洗手段7。
加工裝置1具備:卡盤台8,保持工件W;樹脂被覆手段10,於工件W的正面Wa上被覆樹脂;樹脂硬化手段20,使被覆於工件W之正面Wa的樹脂硬化;搬送單元30,相對於卡盤台8將工件W搬入搬出以及使從卡盤台8搬出之工件W的正反面反轉;研削單元40,其具備研削磨石46,將正面Wa被覆有樹脂之工件W的背面Wb與被覆於正面Wa的樹脂進行研削;及昇降手段50,使研削單元40在垂直方向(Z軸方向)上昇降。
卡盤台8的上表面成為吸引保持工件W的保持面8a,在保持面8a上連接有吸引源。卡盤台8的周圍被外罩9所覆蓋。在卡盤台8的下方連接有使卡盤台8在Y軸方向上移動的移動手段。此外,雖圖中未表示,但實際上卡盤台8的保持面8a係形成以其中心部分為頂點而使外周方向向下傾斜的傾斜面。
樹脂被覆手段10具備:旋轉台11,可旋轉地保持工件W;及樹脂噴嘴12,對保持於旋轉台11的工件W滴下樹脂。旋轉台11的上表面成為吸引保持工件W的保持面11a,在保持面11a上連接有吸引源。在旋轉台11的下方連接有使旋轉台11旋轉的旋轉手段(圖3所示之旋轉手段13)及使旋轉台11在Y軸方向上移動的移動手段。樹脂噴嘴12係配設於臂部120的一端。在臂部120的另一端連接有旋繞軸121,臂部120係能夠以旋繞軸121為中心而水平旋繞。藉由使臂部120旋繞,可在旋轉台11的上方使樹脂噴嘴12在半徑方向上移動。
樹脂硬化手段20配設於與樹脂被覆手段10鄰接的位置,其具備處理室200,該處理室200具有對被覆於工件W之正面Wa的樹脂實施紫外線照射處理的內部空間。在處理室200的內部,例如配設有多個UV燈。在處理室200的近前側(Y軸方向近前側)形成有旋轉台11能夠通過的開口201。
本實施方式所示之搬送單元30係包含第1搬送單元31、第2搬送單元32及正反面反轉用搬送單元33所構成;該第1搬送單元31係將以對位手段6定位於預定位置的工件W搬入卡盤台8、旋轉台11;該第2搬送單元32係將已研削之工件W從卡盤台8搬出;該正反面反轉用搬送單元33係使工件W的正反面反轉。
第1搬送單元31配設於對位手段6的附近,具備:搬送墊310,保持工件W;臂部311,支撐搬送墊310;移動機構,其具有使臂部311昇降並在水平方向上旋繞的軸部312;馬達,連接於軸部312的一端。若軸部312在Z軸方向上昇降,則可使搬送墊310與臂部311一起在Z軸方向上昇降。又,若軸部312旋轉,則臂部311在水平方向上旋繞,而可使搬送墊310在水平方向上旋繞。
第2搬送單元32係與第1搬送單元31鄰接而配置,其具備:搬送墊320,保持工件W;臂部321,支撐搬送墊320;移動機構,其具有使臂部321昇降並在水平方向上旋繞的軸部322;及馬達,連接於軸部322的一端。若軸部322在Z軸方向上昇降,則可使臂部321與搬送墊320一起在Z軸方向上昇降。又,若軸部322旋轉,則臂部321在水平方向上旋繞,而可使搬送墊320在水平方向上旋繞。
正反面反轉用搬送單元33配設於清洗手段7的附近,其至少具備:搬送墊330,保持工件W;水平支撐部331,水平地支撐搬送墊330;及反轉機構332,在水平支撐部331中使搬送墊330的正反面反轉。雖圖中未表示,但在反轉機構332中包含在與水平支撐部331平行的水平方向上具有軸心的旋轉軸。正反面反轉用搬送單元33可在搬送墊330保持工件W的狀態下,在水平支撐部331中使搬送墊330旋轉,藉此使工件W的正反面反轉。關於正反面反轉用搬送單元33,與第1搬送單元31及第2搬送單元32相同地,其亦可使水平支撐部331昇降並在水平方向上旋繞。此外,本實施方式所示之正反面反轉用搬送單元33的構成或配設位置僅為一形態,可適當變更。
在裝置底座2的Y軸方向後部立設有柱部3。研削單元40在柱部3的前方以可昇降的方式被昇降手段50所支撐。昇降手段50具備:滾珠螺桿51,在Z軸方向上延伸;馬達52,連接於滾珠螺桿51的一端;一對導軌53,與滾珠螺桿51平行地延伸;及昇降部54,其內部所具備之螺帽與滾珠螺桿51螺合,同時側部與導軌53滑動接觸。接著,馬達52使滾珠螺桿51旋動,藉此沿著一對導軌53使研削單元40與昇降部54一起在Z軸方向上昇降。
研削單元40具備:圖2所示之主軸41,其具有Z軸方向的軸心;主軸外殼42,圍繞主軸41的外周;馬達43,安裝於主軸41的一端;研削輪45,透過機座44裝設於主軸41的下端;及多個研削磨石46,環狀地固定於研削輪45的下部。馬達43使主軸41旋轉,藉此能夠使研削輪45以預定的旋轉速度旋轉。
在研削單元40的下方側具備朝向研削磨石46噴射清洗水的清洗噴嘴60。在清洗噴嘴60的上端形成有噴射口60a,噴射口60a朝向研削磨石46的底面側。在清洗噴嘴60上連接有清洗水的供給源61。以此方式所構成之清洗噴嘴60,係在以研削磨石46將被覆於圖1所示之工件W的正面Wa的樹脂進行研削時,用於將附著於研削磨石46的樹脂進行水洗。清洗噴嘴60的配設位置並無特別限定,較佳為研削磨石46的正下方、且在研削磨石46的加工點(研削磨石46實際與樹脂或工件W接觸的部分)以外。
加工裝置1具備:測量手段70,測量藉由研削磨石46研削後之樹脂的樹脂厚度;及控制手段,根據藉由測量手段70所測量之樹脂的樹脂厚度的資料,控制研削單元40及昇降手段50。圖示的例子所示之測量手段70,例如係由非接觸式的光學系測量器所構成,但並不限定於此,亦可由接觸式的量規所構成。如此,根據本發明之加工裝置1,可測量藉由研削磨石46研削後之樹脂的樹脂厚度,使工件的背面薄化至預定厚度,故可更高精度地加工工件。
如此,本發明之加工裝置1具備:卡盤台8,保持工件;研削單元40,其具備研削磨石46,將正面Wa被覆有樹脂之工件W的背面Wb與被覆於正面Wa的樹脂進行研削;以及搬送單元30,相對於卡盤台8將工件W搬入搬出以及使從卡盤台8搬出之工件W的正反面反轉;因此可在同一裝置內實施被覆於工件W之正面Wa的樹脂的研削與工件W之背面Wb的研削。因此,根據本發明,不會增加研削的步驟數,而可高效率地實施工件的加工。 又,在以研削磨石46將被覆於工件W之正面Wa的樹脂進行研削時,係一邊從清洗噴嘴60朝向研削磨石46噴射清洗水,將附著於研削磨石46的樹脂進行清洗,一邊實施研削,因此即使將工件W之正面Wa所被覆的樹脂進行研削而使其平坦化,樹脂亦不會殘留於研削磨石46上。因此,可使用同一研削磨石46研削工件W的背面Wb。
2 工件的加工方法 接著,說明對被覆於工件W之正面Wa的樹脂與工件W的背面Wb進行研削的工件的加工方法。本實施方式中係一邊使用上述加工裝置1一邊實施工件的加工方法。在加工裝置1的卡匣4a中容納有多個加工前的工件W。搬出搬入手段5從卡匣4a取出加工前的工件W,並搬送至對位手段6以將工件W定位於預定位置。
(1)樹脂被覆步驟 第1搬送單元31將以對位手段6定位於預定位置的工件W搬出,如圖3所示,將工件W的背面Wb側載置於旋轉台11的保持面11a上,使工件W的正面Wa向上露出。藉由圖中未表示之吸引源的吸引作用以旋轉台11的保持面11a吸引保持工件W後,藉由旋轉手段13使旋轉台11往例如箭頭A方向旋轉。
樹脂噴嘴12相對於旋轉台11的保持面11a在水平方向上旋繞,將樹脂噴嘴12的前端定位於保持在旋轉台11之工件W的正面Wa的中央區域上方側,朝向該中央區域滴下預定量的樹脂100。藉由以旋轉台11的旋轉所產生的離心力,使樹脂100從工件W之正面Wa的中央區域流動至外周側,不停地流到工件W的整個正面Wa上。如此,在工件W的整個正面Wa上被覆樹脂100。作為樹脂100,較佳為使用例如紫外線硬化性樹脂。
(2)樹脂硬化步驟 使圖1所示之旋轉台11從樹脂硬化手段20之處理室200的開口201進入內部。之後,藉由配設於處理室200之內部的多個UV燈朝向樹脂100照射紫外線。藉由紫外線的外部刺激使樹脂100硬化,如圖4所示,藉此在工件W的整個正面Wa上形成硬化之樹脂100a。
(3)樹脂研削步驟 實施樹脂硬化步驟後,使旋轉台11從圖1所示之處理室200退出。第1搬送單元31將工件W從旋轉台11搬出,如圖5所示,將工件W的背面Wb側載置於卡盤台8的保持面8a上,而使被覆於正面Wa的樹脂100a向上露出。藉由圖中未表示之吸引源的吸引作用以卡盤台8的保持面8a吸引保持工件W後,使卡盤台8一邊往例如箭頭A方向旋轉一邊移動至研削單元40的下方。研削單元40使研削輪45一邊往例如箭頭A方向旋轉一邊以預定的研削進給速度下降,並以旋轉的研削磨石46一邊推壓一邊研削樹脂100a而使其平坦化。此外,只要預先使卡盤台8或主軸41傾斜預定角度,藉此將研削磨石46的研削面與卡盤台8的保持面8a調整成平行的位置關係即可。
樹脂研削步驟中,一邊藉由從清洗噴嘴60的噴射口60a朝向研削磨石46噴射清洗水62以將研削磨石46進行清洗,一邊進行樹脂100a的研削。此處,如圖6所示,往箭頭A方向旋轉之研削磨石46的旋轉軌跡之中,研削磨石46實際接觸樹脂100a而實施研削的圓弧狀加工區域成為加工點P1,位於卡盤台8的外側且研削磨石46未接觸樹脂100a的非加工區域則成為非加工點P2。在研削樹脂100a時,研削磨石46一邊時常通過工件W的中心Wo,一邊在加工點P1與研削磨石46接觸而將樹脂100a進行研削。
在旋轉之研削磨石46通過加工點P1並移動至加工點P2的研削磨石46上會附著樹脂100a。亦即,如圖5的部分放大圖所示,未與被覆於工件W之正面Wa的樹脂100a接觸的研削磨石46上,係形成附著有樹脂100a的狀態。因此,在研削樹脂100a時,係時常使供給源61作動,從清洗噴嘴60的噴射口60a朝向研削磨石46噴射清洗水62,以將附著於研削磨石46上的樹脂100a沖走。清洗噴嘴60的位置並無特別限定,只要配置於非加工點P2的任一位置即可。
將樹脂100a進行研削以使其平坦化後,使用圖1所示之測量手段70測量被覆於工件W之正面Wa的樹脂100a之樹脂厚度。藉由測量手段70所測量的樹脂100a之樹脂厚度變成預定厚度後,樹脂研削步驟完成而進入下述工件研削步驟。另一方面,所測量之樹脂100a的樹脂厚度未達到預定厚度的情況下,只要再次以研削磨石46將樹脂100a研削至到達預定厚度即可。
(4)工件研削步驟 藉由圖1所示之第2搬送單元32將工件W卡盤台8搬送至清洗手段7。以清洗手段7清洗工件W後,正反面反轉用搬送單元33以搬送墊330保持被覆於工件W之正面Wa的樹脂100a側,並藉由使水平支撐部331反轉而使工件W的正反面反轉,以使工件W的背面Wb朝上。在此狀態下,第2搬送單元32繼續從正反面反轉用搬送單元33保持工件W。
如圖7所示,第2搬送單元32將被覆於工件W之正面Wa的樹脂100a側載置於卡盤台8的保持面8a上,而使背面Wb向上露出。藉由圖中未表示之吸引源的吸引作用以卡盤台8的保持面8a吸引保持工件W後,使卡盤台8一邊往例如箭頭A方向旋轉一邊移動至研削單元40的下方。
工件研削步驟中係使用與樹脂研削步驟所使用的同一研削磨石46研削工件W的背面Wb。具體而言,以卡盤台8吸引保持工件W之正面Wa的樹脂100a側後,使卡盤台8一邊往例如箭頭A方向旋轉一邊移動至研削單元40的下方。研削單元40一邊使研削輪45往例如箭頭A方向旋轉,一邊以預定的研削進給速度下降,並以旋轉之研削磨石46一邊推壓工件W的背面Wb一邊研削至預定厚度。研削磨石46上未殘留樹脂100a,故可將工件W良好地薄化。
如此,本發明之工件的加工方法具備:樹脂被覆步驟,於工件W的正面Wa上被覆樹脂100;樹脂硬化步驟,對所被覆之樹脂100照射紫外線以使其硬化;樹脂研削步驟,以研削磨石46將硬化之樹脂100a進行研削以使其平坦化;以及工件研削步驟,以卡盤台8保持經平坦化之工件W的樹脂100a側,並以研削磨石46將工件W的背面Wb進行研削;樹脂研削步驟中,係構成一邊將附著於研削磨石46的樹脂100a進行清洗一邊實施研削的態樣,故可在同一裝置內研削被覆於工件W之正面Wa的樹脂100a與工件W的背面Wb。因此,根據本發明,不會增加研削的步驟數,而可高效率地實施工件的加工。 又,樹脂研削步驟中,係一邊從清洗噴嘴60朝向研削磨石46噴射清洗水62,將附著於研削磨石46的樹脂100a進行清洗,一邊實施樹脂100a的研削,因此即使在樹脂研削步驟完成後,樹脂100a亦不會殘留於研削磨石46上。藉此,可使用同一研削磨石46實施工件研削步驟,進而提升加工效率。
1‧‧‧研削裝置
2‧‧‧裝置底座
3‧‧‧柱部
4a、4b‧‧‧卡匣
5‧‧‧搬出搬入手段
6‧‧‧對位手段
7‧‧‧清洗手段
8‧‧‧卡盤台
9‧‧‧外罩
10‧‧‧樹脂被覆手段
11‧‧‧旋轉台
12‧‧‧樹脂噴嘴
13‧‧‧旋轉手段
20‧‧‧樹脂硬化手段
30‧‧‧搬送單元
31‧‧‧第1搬送單元
32‧‧‧第2搬送單元
33‧‧‧正反面反轉用搬送單元
40‧‧‧研削單元
41‧‧‧主軸
42‧‧‧主軸外殼
43‧‧‧馬達
44‧‧‧機座
45‧‧‧研削輪
46‧‧‧研削磨石
50‧‧‧昇降手段
51‧‧‧滾珠螺桿
52‧‧‧馬達
53‧‧‧導軌
54‧‧‧昇降部
60‧‧‧清洗噴嘴
61‧‧‧供給源
62‧‧‧清洗水
70‧‧‧測量手段
圖1係表示加工裝置之構成的立體圖。 圖2係表示研削手段及清洗噴嘴之構成的局部剖面側視圖。 圖3係表示樹脂被覆步驟的立體圖。 圖4係表示樹脂硬化步驟的立體圖。 圖5係表示樹脂研削步驟的局部剖面側視圖。 圖6係說明樹脂研削步驟中研削磨石之加工點與非加工點的示意圖。 圖7係表示工件研削步驟的局部剖面側視圖。

Claims (7)

  1. 一種工件的加工方法,進行被覆於工件正面的樹脂的研削以及工件背面的研削,該工件在該正面上形成格子狀的多條分割預定線所劃分的各區域中形成有元件,該工件的加工方法具備: 樹脂被覆步驟,於工件的該正面被覆該樹脂; 樹脂硬化步驟,對所被覆之該樹脂照射紫外線以使其硬化; 樹脂研削步驟,以研削磨石將硬化之該樹脂進行研削以使其平坦化;以及 工件研削步驟,以卡盤台保持經平坦化之工件的該樹脂側,並以研削磨石將工件的該背面進行研削; 該樹脂研削步驟中係一邊將附著於該研削磨石的該樹脂進行清洗一邊實施研削。
  2. 如申請專利範圍第1項所述之工件的加工方法,其中,該樹脂研削步驟中,係一邊從清洗噴嘴朝向該研削磨石噴射清洗水,將附著於該研削磨石的該樹脂進行清洗,一邊以該研削磨石研削該樹脂。
  3. 如申請專利範圍第1或2項所述之工件的加工方法,其中, 在實施該樹脂研削步驟後,使用相對於卡盤台將工件搬入搬出以及使從該卡盤台搬出之工件的正反面反轉之搬送單元,以使工件的正反面反轉; 在該樹脂研削步驟與該工件研削步驟中使用同一研削磨石。
  4. 一種加工裝置,係用於加工工件,該工件在正面上形成格子狀的多條分割預定線所劃分的各區域中形成有元件,該加工裝置具備: 卡盤台,保持工件; 研削單元,其具備研削磨石,將正面被覆有樹脂之工件的背面與被覆於該正面的樹脂進行研削;以及 搬送單元,相對於該卡盤台將工件搬入搬出以及使從該卡盤台搬出之工件的正反面反轉。
  5. 如申請專利範圍第4項所述之加工裝置,其中,測量藉由該研削磨石研削後之該樹脂的樹脂厚度,使工件的背面薄化至預定厚度。
  6. 如申請專利範圍第4或5項所述之加工裝置,其中, 具備朝向該研削磨石噴射清洗水的清洗噴嘴, 一邊將附著於該研削磨石的該樹脂進行清洗一邊以該研削磨石研削該樹脂。
  7. 如申請專利範圍第4項所述之加工裝置,其中, 使用該搬送單元使工件的正反面反轉, 並使用同一研削磨石實施該樹脂的研削與工件之該背面的研削。
TW107147001A 2017-12-28 2018-12-25 加工裝置 TWI804551B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-253566 2017-12-28
JP2017253566A JP7115850B2 (ja) 2017-12-28 2017-12-28 被加工物の加工方法および加工装置

Publications (2)

Publication Number Publication Date
TW201930005A true TW201930005A (zh) 2019-08-01
TWI804551B TWI804551B (zh) 2023-06-11

Family

ID=66817090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107147001A TWI804551B (zh) 2017-12-28 2018-12-25 加工裝置

Country Status (7)

Country Link
US (1) US11574804B2 (zh)
JP (1) JP7115850B2 (zh)
KR (1) KR102605419B1 (zh)
CN (1) CN110034020B (zh)
DE (1) DE102018222296A1 (zh)
MY (1) MY198794A (zh)
TW (1) TWI804551B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7081919B2 (ja) * 2017-12-26 2022-06-07 株式会社ディスコ 加工装置
JP7216613B2 (ja) * 2019-05-16 2023-02-01 株式会社ディスコ 加工装置
JP7220648B2 (ja) * 2019-12-20 2023-02-10 株式会社荏原製作所 基板処理装置および基板処理方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745569A (ja) * 1993-08-02 1995-02-14 Hitachi Ltd 半導体集積回路装置の製造方法
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
KR100286980B1 (ko) * 1998-02-11 2001-04-16 윤종용 웨이퍼 연마 설비 및 웨이퍼 연마 방법
US20020052169A1 (en) * 2000-03-17 2002-05-02 Krishna Vepa Systems and methods to significantly reduce the grinding marks in surface grinding of semiconductor wafers
US6672943B2 (en) * 2001-01-26 2004-01-06 Wafer Solutions, Inc. Eccentric abrasive wheel for wafer processing
US7451941B2 (en) * 2001-03-13 2008-11-18 Jackson David P Dense fluid spray cleaning process and apparatus
DE10208165C1 (de) * 2002-02-26 2003-10-02 Advanced Micro Devices Inc Verfahren, Steuerung und Vorrichtung zum Steuern des chemisch-mechanischen Polierens von Substraten
US20030209310A1 (en) * 2002-05-13 2003-11-13 Fuentes Anastacio C. Apparatus, system and method to reduce wafer warpage
DE602004007418T2 (de) * 2003-02-12 2008-04-30 Nissan Motor Co., Ltd., Yokohama Vorrichtung und Verfahren zur Oberflächen-Endbearbeitung
JP4523252B2 (ja) * 2003-09-08 2010-08-11 株式会社ディスコ 半導体ウエーハの加工方法および加工装置
JP2005303214A (ja) 2004-04-16 2005-10-27 Matsushita Electric Ind Co Ltd 半導体ウェーハの研削方法
JP4673195B2 (ja) 2005-11-22 2011-04-20 株式会社ディスコ ウエーハの加工方法
JP2007150167A (ja) * 2005-11-30 2007-06-14 Shin Etsu Handotai Co Ltd 半導体ウエーハの平面研削方法および製造方法
JP2009043931A (ja) * 2007-08-08 2009-02-26 Disco Abrasive Syst Ltd ウェーハの裏面研削方法
JP2010034128A (ja) * 2008-07-25 2010-02-12 Sumco Corp ウェーハの製造方法及び該方法により得られたウェーハ
JP2011003611A (ja) 2009-06-16 2011-01-06 Disco Abrasive Syst Ltd ウエーハの研削方法および研削装置
JP2012079910A (ja) * 2010-10-01 2012-04-19 Disco Abrasive Syst Ltd 板状物の加工方法
JP5875224B2 (ja) * 2010-12-21 2016-03-02 株式会社ディスコ 研削装置
JP5658586B2 (ja) 2011-02-03 2015-01-28 株式会社ディスコ 研削装置
JP5795942B2 (ja) 2011-11-11 2015-10-14 株式会社ディスコ Sawデバイス用ウェーハの研削方法
JP5959188B2 (ja) 2011-12-05 2016-08-02 株式会社ディスコ ウエーハの加工方法
JP5887946B2 (ja) * 2012-01-18 2016-03-16 旭硝子株式会社 電子デバイスの製造方法、およびガラス積層体の製造方法
JP5671510B2 (ja) * 2012-06-27 2015-02-18 株式会社岡本工作機械製作所 半導体デバイス基板の研削方法
JP5890768B2 (ja) 2012-11-19 2016-03-22 株式会社東京精密 半導体ウエハ加工装置
US9312142B2 (en) * 2014-06-10 2016-04-12 Globalfoundries Inc. Chemical mechanical polishing method and apparatus
JP6350384B2 (ja) * 2015-05-11 2018-07-04 信越半導体株式会社 研削用砥石
US10096460B2 (en) * 2016-08-02 2018-10-09 Semiconductor Components Industries, Llc Semiconductor wafer and method of wafer thinning using grinding phase and separation phase
JP6732382B2 (ja) * 2016-10-12 2020-07-29 株式会社ディスコ 加工装置及び被加工物の加工方法
TWI821887B (zh) * 2016-11-29 2023-11-11 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及記錄媒體
JP7012454B2 (ja) * 2017-04-27 2022-01-28 株式会社岡本工作機械製作所 静電吸着チャックの製造方法並びに半導体装置の製造方法
JP7081919B2 (ja) * 2017-12-26 2022-06-07 株式会社ディスコ 加工装置
JP6934563B2 (ja) * 2018-04-27 2021-09-15 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP7109537B2 (ja) * 2018-04-27 2022-07-29 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP2020131367A (ja) * 2019-02-20 2020-08-31 株式会社ディスコ 研削装置
JP2022099716A (ja) * 2020-12-23 2022-07-05 株式会社ディスコ 研削装置

Also Published As

Publication number Publication date
CN110034020B (zh) 2024-02-20
MY198794A (en) 2023-09-27
US11574804B2 (en) 2023-02-07
JP2019121630A (ja) 2019-07-22
KR20190080735A (ko) 2019-07-08
US20190206673A1 (en) 2019-07-04
KR102605419B1 (ko) 2023-11-22
JP7115850B2 (ja) 2022-08-09
DE102018222296A1 (de) 2019-07-04
TWI804551B (zh) 2023-06-11
CN110034020A (zh) 2019-07-19

Similar Documents

Publication Publication Date Title
TWI499482B (zh) 晶圓之倒角裝置
TWI804551B (zh) 加工裝置
JP6377433B2 (ja) 研削方法
CN106563980B (zh) 磨削方法
TWI758364B (zh) 板狀工件的保持方法
TWI789473B (zh) 工件的加工裝置
KR20120040104A (ko) 웨이퍼 반송 기구
JP6552930B2 (ja) 研削装置
JP2011131291A (ja) 研削装置及び該研削装置を使用したウエーハの研削方法
JP7396785B2 (ja) 研削装置
JP6045926B2 (ja) 研削研磨装置
TWI651163B (zh) 磨削方法
JP2017204606A (ja) ウエーハ製造方法
JP5700988B2 (ja) ウエーハの研削方法
JP7025249B2 (ja) 被加工物の研削方法。
JP2007301697A (ja) 研磨方法
JP2017019055A (ja) チャックテーブル及びチャックテーブルを備えた加工装置
JP2014042959A (ja) 研削装置
JP2011125987A (ja) 研削装置
JP2016078132A (ja) 加工装置
TW202212052A (zh) 研磨裝置
JP5973284B2 (ja) 研削装置
KR102246915B1 (ko) 연삭 방법
KR20060108316A (ko) 기판 이면 연마 장치
JP2023171983A (ja) 研削装置