GB1088958A - Improvements relating to the treatment of semi-conductor materials - Google Patents

Improvements relating to the treatment of semi-conductor materials

Info

Publication number
GB1088958A
GB1088958A GB3737263A GB3737263A GB1088958A GB 1088958 A GB1088958 A GB 1088958A GB 3737263 A GB3737263 A GB 3737263A GB 3737263 A GB3737263 A GB 3737263A GB 1088958 A GB1088958 A GB 1088958A
Authority
GB
United Kingdom
Prior art keywords
semi
acid
conductor
vapour
metallic impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3737263A
Inventor
Geoffrey Ashton
Timothy Andrew Hadley
Andrew Leslie Reynolds
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB3737263A priority Critical patent/GB1088958A/en
Priority to FR988980A priority patent/FR1409633A/en
Publication of GB1088958A publication Critical patent/GB1088958A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)

Abstract

1,088,958. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Sept. 11, 1964 [Sept. 23, 1963], No. 37372/63. Heading H1K. Lifetime of minority carriers is reduced in a region of a semi-conductor body by doping the selected region with a suitable metallic impurity such as gold, copper, iron or nickel. A quantity of the metal is deposited on the surface of the selected region from a solution of a salt of the metal in a solvent such as water, or hydrochloric acid, hydrofluoric acid, nitric acid, acetic acid, or a mixture of two or more of these acids. The body is then heated to diffuse in the metallic impurity but simultaneously the surface of the semi-conductor is gettered by exposing it to phosphorus pentoxide or boron trioxide vapour to form a glassy layer which removes harmful impurities from the surface and also a fraction of the metallic impurity. The method is particularly useful in the manufacture of three electrode PNPN switching elements. In the embodiment described etched and washed silicon PNPN slices are masked as desired and immersed in a solution of chloroauric acid at known concentration. They are then washed and dried and heated to 1000- 1200‹ C. while exposed to vapour produced by heating phosphorus pentoxide to 450‹ C. The vapour rests with the surface of each slice and on cooling forms the glassy layer which getters the harmful impurities and also a known fraction of the gold.
GB3737263A 1963-09-23 1963-09-23 Improvements relating to the treatment of semi-conductor materials Expired GB1088958A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB3737263A GB1088958A (en) 1963-09-23 1963-09-23 Improvements relating to the treatment of semi-conductor materials
FR988980A FR1409633A (en) 1963-09-23 1964-09-23 Semiconductor material treatment process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3737263A GB1088958A (en) 1963-09-23 1963-09-23 Improvements relating to the treatment of semi-conductor materials

Publications (1)

Publication Number Publication Date
GB1088958A true GB1088958A (en) 1967-10-25

Family

ID=10395959

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3737263A Expired GB1088958A (en) 1963-09-23 1963-09-23 Improvements relating to the treatment of semi-conductor materials

Country Status (1)

Country Link
GB (1) GB1088958A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015064A1 (en) * 1979-01-31 1980-09-03 Fujitsu Limited Process for producing bipolar semiconductor device
FR2462022A1 (en) * 1979-07-24 1981-02-06 Silicium Semiconducteur Ssc Thyristor or triac mfr. process - includes diffusion of gold through windows in glass layer deposited over semiconductor
CN108878279A (en) * 2017-05-08 2018-11-23 株式会社迪思科 Go defect layer forming method
CN108878255A (en) * 2017-05-08 2018-11-23 株式会社迪思科 Go defect layer forming method
JP2019220580A (en) * 2018-06-20 2019-12-26 株式会社ディスコ Gettering layer forming device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015064A1 (en) * 1979-01-31 1980-09-03 Fujitsu Limited Process for producing bipolar semiconductor device
FR2462022A1 (en) * 1979-07-24 1981-02-06 Silicium Semiconducteur Ssc Thyristor or triac mfr. process - includes diffusion of gold through windows in glass layer deposited over semiconductor
CN108878279A (en) * 2017-05-08 2018-11-23 株式会社迪思科 Go defect layer forming method
CN108878255A (en) * 2017-05-08 2018-11-23 株式会社迪思科 Go defect layer forming method
US10541149B2 (en) * 2017-05-08 2020-01-21 Disco Corporation Gettering layer forming method
US10546758B2 (en) * 2017-05-08 2020-01-28 Disco Corporation Gettering layer forming method
TWI751322B (en) * 2017-05-08 2022-01-01 日商迪思科股份有限公司 Defect layer formation method
TWI800507B (en) * 2017-05-08 2023-05-01 日商迪思科股份有限公司 Defect layer forming method
CN108878279B (en) * 2017-05-08 2024-02-20 株式会社迪思科 Defect removing layer forming method
CN108878255B (en) * 2017-05-08 2024-02-20 株式会社迪思科 Defect removing layer forming method
JP2019220580A (en) * 2018-06-20 2019-12-26 株式会社ディスコ Gettering layer forming device

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