IN2014CN03732A - - Google Patents

Info

Publication number
IN2014CN03732A
IN2014CN03732A IN3732CHN2014A IN2014CN03732A IN 2014CN03732 A IN2014CN03732 A IN 2014CN03732A IN 3732CHN2014 A IN3732CHN2014 A IN 3732CHN2014A IN 2014CN03732 A IN2014CN03732 A IN 2014CN03732A
Authority
IN
India
Prior art keywords
micro device
transfer head
device transfer
head
mesa structure
Prior art date
Application number
Other languages
English (en)
Inventor
Andreas Bibl
John A Higginson
Hung Fai Stephen Law
Hsin Hua Hu
Original Assignee
Luxvue Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luxvue Technology Corp filed Critical Luxvue Technology Corp
Publication of IN2014CN03732A publication Critical patent/IN2014CN03732A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75723—Electrostatic holding means
    • H01L2224/75725—Electrostatic holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
    • H01L2224/95136—Aligning the plurality of semiconductor or solid-state bodies involving guiding structures, e.g. shape matching, spacers or supporting members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1431—Logic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1705—Lamina transferred to base from adhered flexible web or sheet type carrier
    • Y10T156/1707—Discrete spaced laminae on adhered carrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1744—Means bringing discrete articles into assembled relationship
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1744—Means bringing discrete articles into assembled relationship
    • Y10T156/1749—All articles from single source only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1744—Means bringing discrete articles into assembled relationship
    • Y10T156/1776—Means separating articles from bulk source

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Micromachines (AREA)
  • Led Device Packages (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Automatic Analysis And Handling Materials Therefor (AREA)
IN3732CHN2014 2011-11-18 2012-11-07 IN2014CN03732A (es)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201161561706P 2011-11-18 2011-11-18
US201261594919P 2012-02-03 2012-02-03
US201261597109P 2012-02-09 2012-02-09
US13/372,277 US8646505B2 (en) 2011-11-18 2012-02-13 Micro device transfer head
US13/372,310 US8333860B1 (en) 2011-11-18 2012-02-13 Method of transferring a micro device
US13/372,292 US9620478B2 (en) 2011-11-18 2012-02-13 Method of fabricating a micro device transfer head
PCT/US2012/063990 WO2013074355A1 (en) 2011-11-18 2012-11-07 Micro device transfer head

Publications (1)

Publication Number Publication Date
IN2014CN03732A true IN2014CN03732A (es) 2015-07-03

Family

ID=47325228

Family Applications (2)

Application Number Title Priority Date Filing Date
IN3734CHN2014 IN2014CN03734A (es) 2011-11-18 2012-11-07
IN3732CHN2014 IN2014CN03732A (es) 2011-11-18 2012-11-07

Family Applications Before (1)

Application Number Title Priority Date Filing Date
IN3734CHN2014 IN2014CN03734A (es) 2011-11-18 2012-11-07

Country Status (11)

Country Link
US (3) US8646505B2 (es)
EP (2) EP2780934B1 (es)
JP (3) JP5954426B2 (es)
KR (3) KR101622061B1 (es)
CN (3) CN104054168B (es)
AU (2) AU2012339925B2 (es)
BR (2) BR112014011826B1 (es)
IN (2) IN2014CN03734A (es)
MX (2) MX2014006033A (es)
TW (3) TWI579958B (es)
WO (3) WO2013074355A1 (es)

Families Citing this family (216)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010111601A2 (en) 2009-03-26 2010-09-30 Semprius, Inc. Methods of forming printable integrated circuit devices and devices formed thereby
US8426227B1 (en) 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8518204B2 (en) 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US9034754B2 (en) 2012-05-25 2015-05-19 LuxVue Technology Corporation Method of forming a micro device transfer head with silicon electrode
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
US9557215B2 (en) 2012-08-17 2017-01-31 Massachusetts Institute Of Technology Phonon-recyling light-emitting diodes
US8791530B2 (en) 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
US9162880B2 (en) 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US8835940B2 (en) 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post
US8941215B2 (en) 2012-09-24 2015-01-27 LuxVue Technology Corporation Micro device stabilization post
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
US9255001B2 (en) 2012-12-10 2016-02-09 LuxVue Technology Corporation Micro device transfer head array with metal electrodes
US9166114B2 (en) 2012-12-11 2015-10-20 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging cavity
US9105714B2 (en) 2012-12-11 2015-08-11 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging bollards
US9314930B2 (en) 2012-12-14 2016-04-19 LuxVue Technology Corporation Micro pick up array with integrated pivot mount
US9391042B2 (en) 2012-12-14 2016-07-12 Apple Inc. Micro device transfer system with pivot mount
US9095980B2 (en) * 2013-02-25 2015-08-04 LuxVue Technology Corporation Micro pick up array mount with integrated displacement sensor
US9308649B2 (en) * 2013-02-25 2016-04-12 LuxVue Techonology Corporation Mass transfer tool manipulator assembly
CN105074899B (zh) * 2013-02-25 2017-06-09 苹果公司 质量转移工具操纵器组件和具有集成位移传感器的微型拾取阵列支座
US8791474B1 (en) 2013-03-15 2014-07-29 LuxVue Technology Corporation Light emitting diode display with redundancy scheme
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
US9217541B2 (en) 2013-05-14 2015-12-22 LuxVue Technology Corporation Stabilization structure including shear release posts
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9136161B2 (en) 2013-06-04 2015-09-15 LuxVue Technology Corporation Micro pick up array with compliant contact
JP6854643B2 (ja) 2013-06-12 2021-04-07 ロヒンニ リミテッド ライアビリティ カンパニー 付着された光発生源を用いたキーボードバックライティング
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US8928021B1 (en) 2013-06-18 2015-01-06 LuxVue Technology Corporation LED light pipe
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
WO2015023819A1 (en) 2013-08-16 2015-02-19 Massachusetts Institute Of Technology Thermo-electrically pumped light-emitting diodes
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
US10224460B2 (en) 2014-06-18 2019-03-05 X-Celeprint Limited Micro assembled LED displays and lighting elements
MY182253A (en) 2014-07-20 2021-01-18 X Celeprint Ltd Apparatus and methods for micro-transfer-printing
GB201413578D0 (en) 2014-07-31 2014-09-17 Infiniled Ltd A colour iled display on silicon
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US10381335B2 (en) 2014-10-31 2019-08-13 ehux, Inc. Hybrid display using inorganic micro light emitting diodes (uLEDs) and organic LEDs (OLEDs)
US10520769B2 (en) 2014-10-31 2019-12-31 eLux, Inc. Emissive display with printed light modification structures
US10319878B2 (en) 2014-10-31 2019-06-11 eLux, Inc. Stratified quantum dot phosphor structure
US10446728B2 (en) 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
US10236279B2 (en) 2014-10-31 2019-03-19 eLux, Inc. Emissive display with light management system
US10418527B2 (en) 2014-10-31 2019-09-17 eLux, Inc. System and method for the fluidic assembly of emissive displays
US9825202B2 (en) 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
US10543486B2 (en) 2014-10-31 2020-01-28 eLux Inc. Microperturbation assembly system and method
US10535640B2 (en) 2014-10-31 2020-01-14 eLux Inc. System and method for the fluidic assembly of micro-LEDs utilizing negative pressure
US10242977B2 (en) 2014-10-31 2019-03-26 eLux, Inc. Fluid-suspended microcomponent harvest, distribution, and reclamation
US10381332B2 (en) 2014-10-31 2019-08-13 eLux Inc. Fabrication method for emissive display with light management system
CN104465474B (zh) * 2014-11-14 2017-09-15 昆山工研院新型平板显示技术中心有限公司 显示器件转印定位装置及其方法
US9576595B1 (en) 2014-11-19 2017-02-21 Seagate Technology Llc Transfer printing an epitaxial layer to a read/write head to form an integral laser
US10069029B1 (en) 2014-11-19 2018-09-04 Seagate Technology Llc Transfer-printed photonics
US10984821B1 (en) 2014-11-19 2021-04-20 Seagate Technology Llc Transfer-printed near-field transducer and heat sink
US9607638B1 (en) 2014-11-19 2017-03-28 Seagate Technology Llc Recording head with an on-wafer integrated laser
US9773711B2 (en) 2014-12-01 2017-09-26 Industrial Technology Research Institute Picking-up and placing process for electronic devices and electronic module
US9607907B2 (en) 2014-12-01 2017-03-28 Industrial Technology Research Institute Electric-programmable magnetic module and picking-up and placement process for electronic devices
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
US10804127B2 (en) 2015-04-01 2020-10-13 Apple Inc. Electrostatic cleaning device
CN107431107B (zh) 2015-04-01 2020-07-24 歌尔股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
KR101614370B1 (ko) * 2015-04-07 2016-04-21 엘지전자 주식회사 반도체 발광소자, 반도체 발광소자의 이송 헤드, 및 반도체 발광소자를 이송하는 방법
US10319697B2 (en) * 2015-05-21 2019-06-11 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-LED
US10224308B2 (en) 2015-07-14 2019-03-05 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-LED
JP6744870B2 (ja) 2015-07-14 2020-08-19 ゴルテック．インク マイクロ発光ダイオードの転写方法、製造方法、マイクロ発光ダイオード装置、及び電子機器
CN105493257A (zh) * 2015-07-14 2016-04-13 歌尔声学股份有限公司 倒装裸片的组装方法、制造方法、装置和电子设备
GB201512600D0 (en) * 2015-07-17 2015-08-26 Koniku Ltd Cell culture, transport and investigation
US9704821B2 (en) 2015-08-11 2017-07-11 X-Celeprint Limited Stamp with structured posts
TWI566918B (zh) * 2015-07-29 2017-01-21 財團法人工業技術研究院 立體列印系統
US10373856B2 (en) * 2015-08-03 2019-08-06 Mikro Mesa Technology Co., Ltd. Transfer head array
US9969078B2 (en) 2015-08-03 2018-05-15 Mikro Mesa Technology Co., Ltd. Transfer head array and transferring method
KR101718717B1 (ko) * 2015-08-11 2017-04-04 (주)다원넥스뷰 프로브 본딩장치 및 이를 이용한 프로브 본딩방법
US10179731B2 (en) 2015-08-17 2019-01-15 Mikro Mesa Technology Co., Ltd. Transfer head array
JP2018506166A (ja) 2015-08-18 2018-03-01 ゴルテック．インク マイクロ発光ダイオードの事前排除方法、製造方法、装置及び電子機器
WO2017028206A1 (en) 2015-08-18 2017-02-23 Goertek.Inc Repairing method, manufacturing method, device and electronic apparatus of micro-led
KR102402189B1 (ko) * 2015-08-26 2022-05-25 엘지전자 주식회사 마이크로 디바이스의 픽업 헤드유닛
WO2017034379A1 (ko) 2015-08-26 2017-03-02 엘지전자 주식회사 반도체 발광소자의 이송 헤드, 이송 시스템 및 반도체 발광소자를 이송하는 방법
US10297719B2 (en) 2015-08-27 2019-05-21 Mikro Mesa Technology Co., Ltd. Micro-light emitting diode (micro-LED) device
KR102402999B1 (ko) * 2015-08-31 2022-05-30 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
JP6501970B2 (ja) * 2015-09-09 2019-04-17 ゴルテック インコーポレイテッド マイクロ発光ダイオードの修復方法、製造方法、装置及び電子機器
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
JP6237826B2 (ja) * 2015-09-30 2017-11-29 日亜化学工業株式会社 パッケージ及び発光装置、並びにそれらの製造方法
JP2018515942A (ja) 2015-10-20 2018-06-14 ゴルテック インコーポレイテッド マイクロ発光ダイオードの搬送方法、製造方法、装置及び電子機器
US10181546B2 (en) 2015-11-04 2019-01-15 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-LED
KR102427644B1 (ko) 2015-11-16 2022-08-02 삼성전자주식회사 광원 모듈, 광원 모듈의 제조방법 및 이를 포함하는 디스플레이 장치
KR20170059068A (ko) 2015-11-19 2017-05-30 삼성전자주식회사 광원 모듈, 디스플레이 패널 및 이를 구비한 디스플레이 장치
CN113421839B (zh) 2015-12-23 2022-03-18 歌尔股份有限公司 微发光二极管转移方法及制造方法
US10629393B2 (en) 2016-01-15 2020-04-21 Rohinni, LLC Apparatus and method of backlighting through a cover on the apparatus
TWI681508B (zh) * 2016-02-25 2020-01-01 愛爾蘭商艾克斯瑟樂普林特有限公司 有效率地微轉印微型裝置於大尺寸基板上
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
KR102562627B1 (ko) 2016-03-21 2023-08-03 삼성디스플레이 주식회사 디스플레이 장치
KR101754528B1 (ko) * 2016-03-23 2017-07-06 한국광기술원 건식 접착구조를 갖는 ｌｅｄ 구조체 어레이의 전사체와 이를 이용한 ｌｅｄ 구조체 어레이의 이송방법 및 ｌｅｄ 구조체
US10622700B2 (en) 2016-05-18 2020-04-14 X-Celeprint Limited Antenna with micro-transfer-printed circuit element
WO2017206149A1 (en) * 2016-06-02 2017-12-07 Goertek.Inc Mems device and electronic apparatus
US9997399B2 (en) 2016-08-16 2018-06-12 Mikro Mesa Technology Co., Ltd. Method for transferring semiconductor structure
US10854779B2 (en) * 2016-11-07 2020-12-01 Goertek. Inc Micro-LED transfer method and manufacturing method
US10783917B1 (en) 2016-11-29 2020-09-22 Seagate Technology Llc Recording head with transfer-printed laser diode unit formed of non-self-supporting layers
WO2018208332A2 (en) 2017-02-17 2018-11-15 Koniku, Inc. Systems for detection
US20180240931A1 (en) * 2017-02-23 2018-08-23 Novatek Microelectronics Corp. Micro-device panel and manufacturing process thereof
TWI624044B (zh) 2017-03-15 2018-05-11 啟端光電股份有限公司 微元件轉移系統
TWI605536B (zh) 2017-04-12 2017-11-11 財團法人工業技術研究院 磁性轉移模組及轉移電子元件的方法
TWI623053B (zh) 2017-04-12 2018-05-01 宏碁股份有限公司 微小元件的轉移方法及微小元件轉移裝置
US10468397B2 (en) 2017-05-05 2019-11-05 X-Celeprint Limited Matrix addressed tiles and arrays
US10604843B2 (en) * 2017-05-10 2020-03-31 Xerox Corporation High registration particles-transferring system
US10734269B1 (en) * 2017-06-07 2020-08-04 Apple Inc. Micro device metal joint process
KR101937036B1 (ko) 2017-06-28 2019-04-09 한국광기술원 Ｌｅｄ 구조체 어레이의 이송방법 및 ｌｅｄ 구조체
US11227787B2 (en) 2017-07-14 2022-01-18 Industrial Technology Research Institute Transfer support and transfer module
CN109256354B (zh) * 2017-07-14 2021-01-12 财团法人工业技术研究院 转移支撑件及转移模块
US10431483B2 (en) 2017-07-14 2019-10-01 Industrial Technology Research Institute Transfer support and transfer module
KR101959057B1 (ko) 2017-07-21 2019-03-18 한국광기술원 마이크로 led칩 전사방법 및 전사장치
TWI633618B (zh) * 2017-08-02 2018-08-21 李美燕 積體化微型夾持器、其製造方法以及使用其之積體化微型夾持器陣列及轉移系統
KR102572669B1 (ko) 2017-08-14 2023-08-31 삼성전자주식회사 전기 소자 이송 장치
KR102123348B1 (ko) 2017-09-28 2020-06-16 시바우라 메카트로닉스 가부시끼가이샤 소자 실장 장치, 소자 실장 방법 및 소자 실장 기판 제조 방법
TWI647810B (zh) * 2017-10-13 2019-01-11 行家光電股份有限公司 微元件之巨量排列方法及系統
EP3471134A1 (en) 2017-10-13 2019-04-17 Maven Optronics Co., Ltd. Method and system for mass arrangement of micro-component devices
TWI654465B (zh) * 2017-11-13 2019-03-21 友達光電股份有限公司 轉置頭及轉置裝置
US10836200B2 (en) 2017-11-13 2020-11-17 X Display Company Technology Limited Rigid micro-modules with ILED and light conductor
TWI626772B (zh) 2017-11-13 2018-06-11 友達光電股份有限公司 轉置裝置
CN107978548B (zh) * 2017-11-20 2019-07-05 厦门市三安光电科技有限公司 微元件的巨量转移方法
TWI637481B (zh) 2017-11-29 2018-10-01 財團法人工業技術研究院 半導體結構、發光裝置及其製造方法
TWI692123B (zh) * 2017-12-19 2020-04-21 英屬開曼群島商錼創科技股份有限公司 微型元件結構
US10236195B1 (en) 2017-12-20 2019-03-19 Mikro Mesa Technology Co., Ltd. Method for transferring device
WO2019132050A1 (ko) * 2017-12-26 2019-07-04 박일우 Led 디스플레이 장치 및 그 제조 방법
CN110034058A (zh) * 2018-01-11 2019-07-19 美科米尚技术有限公司 转置头阵列
US10325889B1 (en) 2018-01-12 2019-06-18 Mikro Mesa Technology Co., Ltd. Display device including LED devices with selective activation function
US11423928B1 (en) 2018-01-19 2022-08-23 Seagate Technology Llc Processing for forming single-grain near-field transducer
KR20190091022A (ko) 2018-01-26 2019-08-05 주식회사 싸인랩 깊이 영상에 따른 캐릭터 홀로그램 표시방법 및 장치
US10937674B2 (en) * 2018-02-13 2021-03-02 Mikro Mesa Technology Co., Ltd. Method for transferring micro device
US11069376B1 (en) 2018-02-21 2021-07-20 Seagate Technology Llc Waveguide with optical isolator for heat-assisted magnetic recording
US10593581B2 (en) * 2018-02-26 2020-03-17 Mikro Mesa Technology Co., Ltd. Transfer head and method for transferring micro devices
US10593582B2 (en) * 2018-02-26 2020-03-17 Mikro Mesa Technology Co., Ltd. Transfer head and method for transferring micro devices
US11189605B2 (en) 2018-02-28 2021-11-30 X Display Company Technology Limited Displays with transparent bezels
KR102076904B1 (ko) 2018-03-16 2020-02-12 한국광기술원 Led 구조체 전사장치
KR102486822B1 (ko) 2018-03-29 2023-01-10 삼성전자주식회사 칩 이송 장치 및 이를 이용한 칩 이송 방법
KR20190114330A (ko) * 2018-03-29 2019-10-10 (주)포인트엔지니어링 마이크로 led 전사헤드
US10910355B2 (en) 2018-04-30 2021-02-02 X Display Company Technology Limited Bezel-free displays
KR20190133988A (ko) 2018-05-24 2019-12-04 (주)피엔티 마이크로 엘이디 온보드 플레이싱 방법 및 플레이싱 장치
US10832934B2 (en) 2018-06-14 2020-11-10 X Display Company Technology Limited Multi-layer tethers for micro-transfer printing
KR20200005237A (ko) * 2018-07-06 2020-01-15 (주)포인트엔지니어링 마이크로 led 전사 헤드 및 이를 이용한 마이크로 led 전사 시스템
KR102558296B1 (ko) 2018-07-10 2023-07-24 삼성전자주식회사 전자 장치, 마이크로 led 모듈 제조 방법 및 컴퓨터 판독가능 기록 매체
KR20200011024A (ko) 2018-07-23 2020-01-31 삼성전자주식회사 Led 전송 장치를 포함하는 전자 장치 및 그 제어 방법
JP7132040B2 (ja) * 2018-08-30 2022-09-06 芝浦メカトロニクス株式会社 素子実装装置及び素子実装基板の製造方法
US11387029B2 (en) 2018-09-12 2022-07-12 LuxNour Technologies Inc. Apparatus for transferring plurality of micro devices and methods of fabrication
TWI676980B (zh) * 2018-09-27 2019-11-11 友達光電股份有限公司 顯示器
KR102590229B1 (ko) 2018-10-15 2023-10-17 삼성전자주식회사 Led 소자 및 led 소자의 제조 방법
US10796938B2 (en) 2018-10-17 2020-10-06 X Display Company Technology Limited Micro-transfer printing with selective component removal
US10573544B1 (en) 2018-10-17 2020-02-25 X-Celeprint Limited Micro-transfer printing with selective component removal
CN111129057B (zh) * 2018-10-31 2023-06-20 成都辰显光电有限公司 微发光二极管阵列器件、制作方法及转移方法
CN111128832B (zh) * 2018-10-31 2021-10-22 成都辰显光电有限公司 微元件转移装置及其制造方法
CN111129235B (zh) * 2018-10-31 2021-10-22 成都辰显光电有限公司 一种微元件的批量转移方法
KR20200052044A (ko) 2018-11-06 2020-05-14 삼성전자주식회사 디스플레이 장치
CN109545731B (zh) * 2018-11-20 2021-12-28 合肥京东方显示技术有限公司 转移头及其制备方法、转移方法、转移装置
CN111243999B (zh) * 2018-11-29 2022-10-28 成都辰显光电有限公司 微元件的转移装置及转移方法
US20210002128A1 (en) 2018-12-03 2021-01-07 X-Celeprint Limited Enclosed cavity structures
US11274035B2 (en) 2019-04-24 2022-03-15 X-Celeprint Limited Overhanging device structures and related methods of manufacture
US11282786B2 (en) 2018-12-12 2022-03-22 X Display Company Technology Limited Laser-formed interconnects for redundant devices
CN109661163B (zh) * 2018-12-20 2019-08-13 广东工业大学 一种温控粘附式Micro-LED巨量转移方法
US11483937B2 (en) 2018-12-28 2022-10-25 X Display Company Technology Limited Methods of making printed structures
CN109742051A (zh) * 2019-01-02 2019-05-10 京东方科技集团股份有限公司 器件制备方法、转印头及其控制方法、控制器和转印装置
KR102548400B1 (ko) * 2019-01-04 2023-06-27 주식회사 나노엑스 Led 이송 방법
TWI690102B (zh) 2019-01-04 2020-04-01 友達光電股份有限公司 發光裝置及其製造方法
US11251139B2 (en) 2019-01-22 2022-02-15 X-Celeprint Limited Secure integrated-circuit systems
US11322460B2 (en) 2019-01-22 2022-05-03 X-Celeprint Limited Secure integrated-circuit systems
KR20200094498A (ko) 2019-01-30 2020-08-07 삼성전자주식회사 마스크를 포함하는 마이크로 엘이디 전사 장치 및 이를 이용한 마이크로 엘이디 전사 방법
US11088121B2 (en) 2019-02-13 2021-08-10 X Display Company Technology Limited Printed LED arrays with large-scale uniformity
US10748793B1 (en) 2019-02-13 2020-08-18 X Display Company Technology Limited Printing component arrays with different orientations
KR102169271B1 (ko) 2019-03-08 2020-10-23 한국광기술원 Led 구조체 전사 장치
US11164934B2 (en) 2019-03-12 2021-11-02 X Display Company Technology Limited Tiled displays with black-matrix support screens
US11094870B2 (en) 2019-03-12 2021-08-17 X Display Company Technology Limited Surface-mountable pixel packages and pixel engines
JP7228130B2 (ja) * 2019-04-10 2023-02-24 大日本印刷株式会社 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法
CN110033704B (zh) * 2019-04-19 2022-07-19 京东方科技集团股份有限公司 转印装置和转印方法
KR20200126234A (ko) 2019-04-29 2020-11-06 삼성전자주식회사 마이크로 led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
KR20200128987A (ko) 2019-05-07 2020-11-17 삼성전자주식회사 마이크로 led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
KR20200142685A (ko) 2019-06-13 2020-12-23 삼성전자주식회사 마이크로 led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
US10944027B2 (en) 2019-06-14 2021-03-09 X Display Company Technology Limited Pixel modules with controllers and light emitters
US11488943B2 (en) 2019-06-14 2022-11-01 X Display Company Technology Limited Modules with integrated circuits and devices
US11101417B2 (en) 2019-08-06 2021-08-24 X Display Company Technology Limited Structures and methods for electrically connecting printed components
US11362243B2 (en) * 2019-10-09 2022-06-14 Lumileds Llc Optical coupling layer to improve output flux in LEDs
US11637540B2 (en) 2019-10-30 2023-04-25 X-Celeprint Limited Non-linear tethers for suspended devices
US11626856B2 (en) 2019-10-30 2023-04-11 X-Celeprint Limited Non-linear tethers for suspended devices
US11127889B2 (en) 2019-10-30 2021-09-21 X Display Company Technology Limited Displays with unpatterned layers of light-absorbing material
WO2021114028A1 (zh) * 2019-12-09 2021-06-17 重庆康佳光电技术研究院有限公司 一种微型发光二极管的转移单元、显示模组以及显示设备
CN113035736A (zh) * 2019-12-09 2021-06-25 群创光电股份有限公司 电子装置的制作方法
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
US11315909B2 (en) 2019-12-20 2022-04-26 X Display Company Technology Limited Displays with embedded light emitters
CN111146136A (zh) * 2019-12-24 2020-05-12 南京中电熊猫平板显示科技有限公司 一种微型器件转移头及其制造方法
US11037912B1 (en) 2020-01-31 2021-06-15 X Display Company Technology Limited LED color displays with multiple LEDs connected in series and parallel in different sub-pixels of a pixel
CN115485836A (zh) * 2020-03-10 2022-12-16 亮锐有限责任公司 制造增强型led阵列组件的方法
US11538849B2 (en) 2020-05-28 2022-12-27 X Display Company Technology Limited Multi-LED structures with reduced circuitry
CN112967983B (zh) * 2020-09-21 2022-05-20 重庆康佳光电技术研究院有限公司 转移系统和转移方法
US12006205B2 (en) 2020-10-08 2024-06-11 X-Celeprint Limited Micro-device structures with etch holes
US11952266B2 (en) 2020-10-08 2024-04-09 X-Celeprint Limited Micro-device structures with etch holes
CN112992759B (zh) * 2020-10-16 2022-04-19 重庆康佳光电技术研究院有限公司 一种器件转移设备及其制备方法、器件转移方法
CN112133667B (zh) * 2020-11-25 2021-03-16 武汉大学 一种微型器件转移装置及转移方法
US20220199449A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Carrier for microelectronic assemblies having direct bonding
US20220199450A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Carrier for microelectronic assemblies having direct bonding
US20220199453A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Carrier for microelectronic assemblies having direct bonding
WO2022202934A1 (ja) * 2021-03-26 2022-09-29 デクセリアルズ株式会社 表示装置の製造方法

Family Cites Families (216)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717743A (en) 1970-12-07 1973-02-20 Argus Eng Co Method and apparatus for heat-bonding in a local area using combined heating techniques
US3935986A (en) 1975-03-03 1976-02-03 Texas Instruments Incorporated Solid state bonding process employing the isothermal solidification of a liquid interface
JPS5469957A (en) 1977-11-15 1979-06-05 Nec Home Electronics Ltd Production of semiconductor device
JPS57149741A (en) * 1981-03-11 1982-09-16 Hitachi Ltd Bonding method for semiconductor pellet
JPS5850582A (ja) 1981-09-22 1983-03-25 株式会社東芝 発光ダイオ−ドを用いたデイスプレイ装置
JPS58180043A (ja) 1982-04-15 1983-10-21 Nec Corp 半導体装置の製造方法
JPS5965490A (ja) 1982-10-05 1984-04-13 Ricoh Co Ltd 半導体発光素子アレイの製造方法
JPS61102787A (ja) 1984-10-26 1986-05-21 Matsushita Electric Ind Co Ltd 発光半導体装置
US5131582A (en) 1989-06-30 1992-07-21 Trustees Of Boston University Adhesive metallic alloys and methods of their use
IT1244119B (it) 1990-11-29 1994-07-05 Cons Ric Microelettronica Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
JPH0513820A (ja) 1991-07-02 1993-01-22 Omron Corp 半導体装置
JPH0563242A (ja) 1991-08-29 1993-03-12 Nippon Steel Corp 発光ダイオード用リードフレーム及び発光ダイオードランプ
US5156998A (en) 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JP2797958B2 (ja) 1993-04-27 1998-09-17 日本電気株式会社 光半導体素子接合構造と接合方法
JPH06334217A (ja) 1993-05-25 1994-12-02 Victor Co Of Japan Ltd Ｌｅｄアレイ装置
JPH0760675A (ja) 1993-08-27 1995-03-07 Tokin Corp 静電吸着ハンド
US5435857A (en) 1994-01-06 1995-07-25 Qualitek International, Inc. Soldering composition
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
JP3271475B2 (ja) 1994-08-01 2002-04-02 株式会社デンソー 電気素子の接合材料および接合方法
TW311927B (es) 1995-07-11 1997-08-01 Minnesota Mining & Mfg
JP3132353B2 (ja) 1995-08-24 2001-02-05 松下電器産業株式会社 チップの搭載装置および搭載方法
KR100186752B1 (ko) 1995-09-04 1999-04-15 황인길 반도체 칩 본딩방법
US5888847A (en) 1995-12-08 1999-03-30 Lsi Logic Corporation Technique for mounting a semiconductor die
US5858099A (en) 1996-04-09 1999-01-12 Sarnoff Corporation Electrostatic chucks and a particle deposition apparatus therefor
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
KR100278137B1 (ko) 1997-09-04 2001-01-15 가나이 쓰도무 반도체소자의 탑재방법 및 그 시스템, 반도체소자 분리장치 및ic카드의 제조방법
US5903428A (en) 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
JP3406207B2 (ja) 1997-11-12 2003-05-12 シャープ株式会社 表示用トランジスタアレイパネルの形成方法
JPH11168132A (ja) * 1997-12-05 1999-06-22 Hitachi Ltd 静電吸着装置
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6080650A (en) 1998-02-04 2000-06-27 Texas Instruments Incorporated Method and apparatus for attaching particles to a substrate
JP4083866B2 (ja) 1998-04-28 2008-04-30 シャープ株式会社 半導体レーザ素子
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
JPH11333765A (ja) 1998-05-26 1999-12-07 Tokai Rika Co Ltd 力センサ付きマイクロマニピュレータ
KR100443840B1 (ko) * 1998-09-01 2005-01-13 엘지.필립스 엘시디 주식회사 액정표시장치의제조방법
JP3504543B2 (ja) 1999-03-03 2004-03-08 株式会社日立製作所 半導体素子の分離方法およびその装置並びに半導体素子の搭載方法
JP2001144168A (ja) 1999-11-16 2001-05-25 Nikon Corp 静電チャック、それを有する荷電粒子線露光装置、ウエハ保持方法及びそれを用いたデバイス製造方法
WO2001041225A2 (en) 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6335263B1 (en) 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
JP4489904B2 (ja) 2000-04-14 2010-06-23 株式会社アルバック 真空処理装置及び基板保持方法
US6558109B2 (en) 2000-05-26 2003-05-06 Automation Technology, Inc. Method and apparatus for separating wafers
US6683368B1 (en) 2000-06-09 2004-01-27 National Semiconductor Corporation Lead frame design for chip scale package
JP4467720B2 (ja) 2000-06-15 2010-05-26 株式会社アルバック 基板搬送装置
KR20020005152A (ko) 2000-07-08 2002-01-17 구본준, 론 위라하디락사 투명도전막 패터닝 방법
JP3906653B2 (ja) 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
DE10051159C2 (de) 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
JP2002134822A (ja) 2000-10-24 2002-05-10 Sharp Corp 半導体発光装置およびその製造方法
JP4780828B2 (ja) 2000-11-22 2011-09-28 三井化学株式会社 ウエハ加工用粘着テープ及びその製造方法並びに使用方法
JP2002164695A (ja) 2000-11-29 2002-06-07 Mitsubishi Paper Mills Ltd 電子材料搬送用静電吸着板
US7022546B2 (en) 2000-12-05 2006-04-04 Analog Devices, Inc. Method and device for protecting micro electromechanical systems structures during dicing of a wafer
JP4514321B2 (ja) 2000-12-08 2010-07-28 パナソニック株式会社 部品実装装置
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US20040154733A1 (en) * 2001-02-08 2004-08-12 Thomas Morf Chip transfer method and apparatus
JP2002240943A (ja) 2001-02-13 2002-08-28 Ricoh Co Ltd 静電搬送装置、現像装置、画像形成装置及び分級装置
DE10124328A1 (de) 2001-05-17 2002-11-21 Ersa Gmbh Vorrichtung und Verfahren zum Entlöten eines elektronischen Bauteils
JP4524953B2 (ja) * 2001-05-18 2010-08-18 パナソニック株式会社 窒化物半導体基板の製造方法および窒化物半導体装置の製造方法
JP3747807B2 (ja) 2001-06-12 2006-02-22 ソニー株式会社 素子実装基板及び不良素子の修復方法
CN1505843B (zh) 2001-06-15 2010-05-05 克里公司 在SiC衬底上形成的GaN基LED
US6787435B2 (en) 2001-07-05 2004-09-07 Gelcore Llc GaN LED with solderable backside metal
JP3989254B2 (ja) 2002-01-25 2007-10-10 日本碍子株式会社 異種材料接合体及びその製造方法
US6793829B2 (en) 2002-02-27 2004-09-21 Honeywell International Inc. Bonding for a micro-electro-mechanical system (MEMS) and MEMS based devices
JP4214704B2 (ja) 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
US7033842B2 (en) 2002-03-25 2006-04-25 Matsushita Electric Industrial Co., Ltd. Electronic component mounting apparatus and electronic component mounting method
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP3843884B2 (ja) * 2002-04-23 2006-11-08 住友電気工業株式会社 バイポーラトランジスタの製造方法
JP4281044B2 (ja) 2002-06-18 2009-06-17 財団法人名古屋産業科学研究所 微小部品の配置方法
JP4338376B2 (ja) * 2002-10-24 2009-10-07 キヤノンアネルバ株式会社 静電チャック装置
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
TWI249148B (en) 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
JP4147073B2 (ja) 2002-09-02 2008-09-10 シャープ株式会社 発光ダイオードの製造方法
JP3873854B2 (ja) 2002-09-19 2007-01-31 株式会社デンソー 半導体装置の製造方法
DE10245631B4 (de) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
US7180099B2 (en) 2002-11-11 2007-02-20 Oki Data Corporation Semiconductor apparatus with thin semiconductor film
KR20050075280A (ko) 2002-11-19 2005-07-20 가부시키가이샤 이시카와 세이사쿠쇼 화소제어 소자의 선택 전사 방법, 화소제어 소자의 선택전사 방법에 사용되는 화소제어 소자의 실장 장치,화소제어 소자 전사후의 배선 형성 방법, 및, 평면디스플레이 기판
JP4766831B2 (ja) 2002-11-26 2011-09-07 株式会社村田製作所 電子部品の製造方法
GB0229191D0 (en) 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
JP2006515716A (ja) 2003-01-21 2006-06-01 シーメンス　アクチエンゲゼルシヤフト 有機電子素子のための封止体及び前記封止体の製造方法
US6786390B2 (en) 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
JP4334892B2 (ja) 2003-03-20 2009-09-30 パナソニック株式会社 部品実装方法
WO2005015647A1 (en) 2003-08-08 2005-02-17 Vichel Inc. Nitride micro light emitting diode with high brightness and method of manufacturing the same
JP4580633B2 (ja) 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
KR20050082487A (ko) 2004-02-19 2005-08-24 삼성전자주식회사 면광원 장치 및 이를 갖는 표시장치
JP4236259B2 (ja) 2004-03-08 2009-03-11 キヤノン株式会社 記録装置
JP4868709B2 (ja) 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
EP1736035A4 (en) 2004-03-29 2009-01-07 Articulated Technologies Llc FROM ROLE TO ROLLED LIGHT LEAF AND CAPSULE SEMICONDUCTOR CIRCUIT ELEMENTS
JP3994980B2 (ja) 2004-03-29 2007-10-24 株式会社日立製作所 素子搭載用基板及びその製造方法並びに半導体素子実装方法
DE602005009344D1 (de) 2004-03-31 2008-10-09 Applied Materials Inc Verfahren und vorrichtung zur übertragung von leitenden teilen bei der herstellung von halbleiterbauelementen
US7462861B2 (en) 2004-04-28 2008-12-09 Cree, Inc. LED bonding structures and methods of fabricating LED bonding structures
JP4632690B2 (ja) 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
KR101368748B1 (ko) 2004-06-04 2014-03-05 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
JP4830275B2 (ja) 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
KR100630698B1 (ko) 2004-08-17 2006-10-02 삼성전자주식회사 솔더볼 접착 신뢰도를 높이는 반도체 패키지 및 그 제조방법
JP3904571B2 (ja) 2004-09-02 2007-04-11 ローム株式会社 半導体発光装置
US7187078B2 (en) 2004-09-13 2007-03-06 Taiwan Semiconductor Manufacturing Co. Ltd. Bump structure
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7195944B2 (en) 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US7378288B2 (en) 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7563625B2 (en) 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
JP2006196692A (ja) 2005-01-13 2006-07-27 Sony Corp 半導体装置の製造方法
JP4848638B2 (ja) 2005-01-13 2011-12-28 ソニー株式会社 半導体素子の形成方法および半導体素子のマウント方法
KR100707955B1 (ko) 2005-02-07 2007-04-16 (주) 비앤피 사이언스 발광 다이오드 및 이의 제조 방법
DE102005009060A1 (de) 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh Modul mit strahlungsemittierenden Halbleiterkörpern
US7205652B2 (en) 2005-03-23 2007-04-17 Delphi Technologies, Inc Electronic assembly including multiple substrates
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
JP4950557B2 (ja) 2005-05-31 2012-06-13 三洋電機株式会社 半導体発光装置
TWI258221B (en) * 2005-06-28 2006-07-11 Ind Tech Res Inst A thin film transistor (TFT) for driving organic light emitting diodes and manufacturing method thereof
US7498240B2 (en) 2005-08-31 2009-03-03 Micron Technology, Inc. Microfeature workpieces, carriers, and associated methods
KR20070042214A (ko) 2005-10-18 2007-04-23 김성진 질화물 반도체 발광 다이오드 및 그 제조방법
KR100755874B1 (ko) * 2005-11-30 2007-09-05 주식회사 아이피에스 진공처리장치의 정전척, 그를 가지는 진공처리장치 및정전척의 제조방법
JP4564927B2 (ja) * 2006-02-09 2010-10-20 太平洋セメント株式会社 双極型静電チャック
US7737451B2 (en) 2006-02-23 2010-06-15 Cree, Inc. High efficiency LED with tunnel junction layer
KR100778820B1 (ko) 2006-04-25 2007-11-22 포항공과대학교 산학협력단 금속 전극 형성 방법 및 반도체 발광 소자의 제조 방법 및질화물계 화합물 반도체 발광 소자
US7910945B2 (en) 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
TWI345494B (en) * 2006-07-07 2011-07-21 Hon Hai Prec Ind Co Ltd Clamping apparatus for washing optical elements
JP5126875B2 (ja) 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP2008053685A (ja) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
JP4535053B2 (ja) 2006-10-12 2010-09-01 ソニー株式会社 発光ダイオードの配線の形成方法、発光ダイオード実装基板、ディスプレイ、バックライト、照明装置および電子機器
JP4890421B2 (ja) 2006-10-31 2012-03-07 太平洋セメント株式会社 静電チャック
JP4835409B2 (ja) 2006-11-30 2011-12-14 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子、およびその製造方法
US7795054B2 (en) 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
CN102255018B (zh) 2006-12-22 2013-06-19 昆南诺股份有限公司 带有直立式纳米线结构的led及其制作方法
JP4980709B2 (ja) 2006-12-25 2012-07-18 ローム株式会社 半導体装置
KR101519038B1 (ko) 2007-01-17 2015-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
JP2008186959A (ja) 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族半導体素子、およびその製造方法
US8188497B2 (en) 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
TW200834962A (en) 2007-02-08 2008-08-16 Touch Micro System Tech LED array package structure having Si-substrate and method of making the same
JP2008200821A (ja) 2007-02-21 2008-09-04 Denso Corp ハニカム体成形用金型の製造方法
FR2913145B1 (fr) 2007-02-22 2009-05-15 Stmicroelectronics Crolles Sas Assemblage de deux parties de circuit electronique integre
JP4290745B2 (ja) 2007-03-16 2009-07-08 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
US7732301B1 (en) 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
JP4341693B2 (ja) 2007-05-16 2009-10-07 ウシオ電機株式会社 Ｌｅｄ素子およびその製造方法
TW200908164A (en) 2007-05-20 2009-02-16 Silverbrook Res Pty Co Ltd Die picker with laser die heater
US8029164B2 (en) 2007-05-21 2011-10-04 Goldeneye, Inc. LED light recycling cavity with integrated optics
US8030757B2 (en) 2007-06-29 2011-10-04 Intel Corporation Forming a semiconductor package including a thermal interface material
JP5278317B2 (ja) 2007-06-29 2013-09-04 豊田合成株式会社 発光ダイオードの製造方法
US7838410B2 (en) 2007-07-11 2010-11-23 Sony Corporation Method of electrically connecting element to wiring, method of producing light-emitting element assembly, and light-emitting element assembly
US20090278233A1 (en) 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
JP4844506B2 (ja) 2007-08-28 2011-12-28 パナソニック電工株式会社 発光装置
US20090072382A1 (en) 2007-09-18 2009-03-19 Guzek John S Microelectronic package and method of forming same
JP4809308B2 (ja) 2007-09-21 2011-11-09 新光電気工業株式会社 基板の製造方法
US8558379B2 (en) 2007-09-28 2013-10-15 Tessera, Inc. Flip chip interconnection with double post
WO2009048799A1 (en) 2007-10-11 2009-04-16 Jie Yao Photo-detector array and semiconductor image intensifier
KR101759042B1 (ko) 2007-11-21 2017-07-17 오디오 픽셀즈 리미티드 디지털 스피커 장치의 작동 장치 및 작동 시스템
KR101438811B1 (ko) 2008-01-03 2014-09-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101475520B1 (ko) 2008-01-14 2014-12-23 삼성전자주식회사 잉크젯 프린트용 양자점 잉크 조성물 및 그를 이용한전자소자
JP2009182076A (ja) 2008-01-30 2009-08-13 Panasonic Corp 半導体装置及びその製造方法
JP5288852B2 (ja) 2008-03-21 2013-09-11 スタンレー電気株式会社 半導体素子の製造方法
US8222063B2 (en) 2008-03-26 2012-07-17 Lattice Power (Jiangxi) Corporation Method for fabricating robust light-emitting diodes
JP4479827B2 (ja) 2008-05-12 2010-06-09 ソニー株式会社 発光ダイオード表示装置及びその製造方法
DE102008050538B4 (de) 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
CN101603636B (zh) 2008-06-10 2012-05-23 展晶科技(深圳)有限公司 光源装置
US7927976B2 (en) 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
KR101332794B1 (ko) 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
US7999454B2 (en) 2008-08-14 2011-08-16 Global Oled Technology Llc OLED device with embedded chip driving
WO2010021268A1 (ja) 2008-08-21 2010-02-25 株式会社村田製作所 電子部品装置およびその製造方法
JPWO2010021267A1 (ja) 2008-08-21 2012-01-26 株式会社村田製作所 電子部品装置およびその製造方法
WO2010020077A1 (en) 2008-08-22 2010-02-25 Lattice Power (Jiangxi) Corporation Method for fabricating ingaain light-emitting device on a combined substrate
JP2010056458A (ja) 2008-08-29 2010-03-11 Kyocera Corp 発光素子の製造方法
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
TWI467691B (zh) 2008-10-15 2015-01-01 Creative Tech Corp Electrostatic chuck and its manufacturing method
US7854365B2 (en) 2008-10-27 2010-12-21 Asm Assembly Automation Ltd Direct die attach utilizing heated bond head
US8506867B2 (en) 2008-11-19 2013-08-13 Semprius, Inc. Printing semiconductor elements by shear-assisted elastomeric stamp transfer
JP5359734B2 (ja) 2008-11-20 2013-12-04 豊田合成株式会社 発光装置及びその製造方法
JP4888473B2 (ja) 2008-11-20 2012-02-29 ソニー株式会社 実装基板
JP5225041B2 (ja) 2008-11-21 2013-07-03 京セラ株式会社 静電チャック
KR20110093904A (ko) 2008-11-25 2011-08-18 엠 큐브드 테크놀로지스, 인크. 정전 척
JP2010161212A (ja) 2009-01-08 2010-07-22 Hitachi Cable Ltd 半導体発光素子用ウェハの製造方法
JP5293211B2 (ja) 2009-01-14 2013-09-18 Ｔｏｔｏ株式会社 静電チャックおよび静電チャックの製造方法
KR101809472B1 (ko) 2009-01-14 2018-01-18 삼성전자주식회사 광추출 효율이 향상된 발광 장치
KR101001454B1 (ko) 2009-01-23 2010-12-14 삼성모바일디스플레이주식회사 정전척 및 이를 구비한 유기전계발광 소자의 제조장치
JP2010186829A (ja) 2009-02-10 2010-08-26 Toshiba Corp 発光素子の製造方法
KR100974776B1 (ko) 2009-02-10 2010-08-06 엘지이노텍 주식회사 발광 소자
JP5146356B2 (ja) 2009-02-24 2013-02-20 豊田合成株式会社 発光装置及びその製造方法
JP2010199204A (ja) 2009-02-24 2010-09-09 Sony Corp 発光装置およびその製造方法
JP5470601B2 (ja) 2009-03-02 2014-04-16 新光電気工業株式会社 静電チャック
WO2010111601A2 (en) 2009-03-26 2010-09-30 Semprius, Inc. Methods of forming printable integrated circuit devices and devices formed thereby
US8937327B2 (en) 2009-03-31 2015-01-20 Seoul Semiconductor Co., Ltd. Light emitting device having plurality of light emitting cells and method of fabricating the same
TWI485879B (zh) 2009-04-09 2015-05-21 Lextar Electronics Corp 發光二極體晶片及其製造方法
US8153589B2 (en) 2009-04-27 2012-04-10 The University Of North Carolina At Chapel Hill JNK3 as a target for the treatment of angiogenesis-related diseases
EP2249406B1 (en) 2009-05-04 2019-03-06 LG Innotek Co., Ltd. Light emitting diode
KR101706915B1 (ko) 2009-05-12 2017-02-15 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리
US7989266B2 (en) 2009-06-18 2011-08-02 Aptina Imaging Corporation Methods for separating individual semiconductor devices from a carrier
US8173456B2 (en) 2009-07-05 2012-05-08 Industrial Technology Research Institute Method of manufacturing a light emitting diode element
DE102009033686A1 (de) 2009-07-17 2011-01-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines anorganischen optoelektronischen Halbleiterbauteils
JP5301418B2 (ja) 2009-12-02 2013-09-25 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
KR100973928B1 (ko) 2009-12-10 2010-08-03 (주)옵토니카 Ｌｅｄ 다이본딩 방법
US9209059B2 (en) 2009-12-17 2015-12-08 Cooledge Lighting, Inc. Method and eletrostatic transfer stamp for transferring semiconductor dice using electrostatic transfer printing techniques
US8334152B2 (en) 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
DE102009058796A1 (de) 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
TWI467798B (zh) 2009-12-28 2015-01-01 Hon Hai Prec Ind Co Ltd 發光二極體晶片之製備方法
JP4996706B2 (ja) 2010-03-03 2012-08-08 株式会社東芝 半導体発光素子およびその製造方法
CN101807649B (zh) 2010-03-19 2013-01-23 厦门市三安光电科技有限公司 具有引入粗化层的高亮度铝镓铟磷基发光二极管及其制作方法
US9161448B2 (en) 2010-03-29 2015-10-13 Semprius, Inc. Laser assisted transfer welding process
WO2011123285A1 (en) 2010-03-29 2011-10-06 Semprius, Inc. Selective transfer of active components
KR20110123118A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
KR101028277B1 (ko) 2010-05-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛
CN101872824A (zh) 2010-06-07 2010-10-27 厦门市三安光电科技有限公司 侧面具有双反射层的氮化镓基倒装发光二极管及其制备方法
US8381965B2 (en) 2010-07-22 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compress bonding
JP5700504B2 (ja) 2010-08-05 2015-04-15 株式会社デンソー 半導体装置接合材
JP2010263251A (ja) 2010-08-25 2010-11-18 Sanyo Electric Co Ltd 発光素子およびその製造方法
US8563334B2 (en) 2010-09-14 2013-10-22 Tsmc Solid State Lighting Ltd. Method to remove sapphire substrate
JP4778107B1 (ja) 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法
JP5740939B2 (ja) 2010-11-29 2015-07-01 住友電気工業株式会社 半導体装置の製造方法
US8934259B2 (en) 2011-06-08 2015-01-13 Semprius, Inc. Substrates with transferable chiplets
GB201112376D0 (en) 2011-07-19 2011-08-31 Rolls Royce Plc Boding of metal components
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
JP5881992B2 (ja) 2011-08-09 2016-03-09 太陽誘電株式会社 積層インダクタ及びその製造方法
US8518204B2 (en) 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
US8426227B1 (en) 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
JP5961377B2 (ja) 2011-12-21 2016-08-02 スタンレー電気株式会社 半導体発光素子

Also Published As

Publication number Publication date
JP2015505736A (ja) 2015-02-26
JP2017022391A (ja) 2017-01-26
TWI602251B (zh) 2017-10-11
MX336548B (es) 2016-01-22
WO2013074356A1 (en) 2013-05-23
KR20140103278A (ko) 2014-08-26
JP2015507839A (ja) 2015-03-12
US8333860B1 (en) 2012-12-18
BR112014011826B1 (pt) 2021-07-27
BR112014011800A2 (pt) 2017-05-09
EP2780934B1 (en) 2021-03-24
EP2780933A1 (en) 2014-09-24
KR20140103963A (ko) 2014-08-27
MX2014006032A (es) 2015-01-16
WO2013074357A1 (en) 2013-05-23
CN104054167B (zh) 2017-02-01
IN2014CN03734A (es) 2015-09-04
TWI528494B (zh) 2016-04-01
BR112014011826A2 (pt) 2017-05-09
KR20140103279A (ko) 2014-08-26
AU2012339923B2 (en) 2015-01-29
EP2780934A1 (en) 2014-09-24
AU2012339923A1 (en) 2014-06-05
CN104054167A (zh) 2014-09-17
CN104054168A (zh) 2014-09-17
WO2013074355A1 (en) 2013-05-23
CN104067379A (zh) 2014-09-24
MX2014006033A (es) 2014-10-17
CN104067379B (zh) 2017-08-08
AU2012339925A1 (en) 2014-06-05
TWI579958B (zh) 2017-04-21
KR101684751B1 (ko) 2016-12-08
TW201347085A (zh) 2013-11-16
EP2780933B1 (en) 2021-06-30
BR112014011800B1 (pt) 2020-12-22
TW201327721A (zh) 2013-07-01
JP6196717B2 (ja) 2017-09-13
US9620478B2 (en) 2017-04-11
CN104054168B (zh) 2017-06-16
AU2012339925B2 (en) 2015-02-19
US20130127020A1 (en) 2013-05-23
JP5954426B2 (ja) 2016-07-20
TW201327695A (zh) 2013-07-01
KR101622060B1 (ko) 2016-05-17
EP2780934A4 (en) 2015-07-22
KR101622061B1 (ko) 2016-05-17
EP2780933A4 (en) 2015-11-04
US8646505B2 (en) 2014-02-11
US20130130416A1 (en) 2013-05-23

Similar Documents

Publication Publication Date Title
IN2014CN03734A (es)
MX347995B (es) Emisor híbrido de celda solar con contacto posterior.
WO2012112873A3 (en) Flexible light emitting semiconductor device
EP2628186A4 (en) VERTICAL SEMICONDUCTOR DEVICE WITH IMPROVED SUBSTRATE
EP2701211A3 (en) Light emitting device
EP2367210A3 (en) Light emitting device and light emitting device package
IN2014CN03711A (es)
EP2356689A4 (en) SOLAR CELL WITH LOWER SURFACE ORIFICE TO ENGAGE WITH THE TRANSMITTING LAYER
WO2012071136A3 (en) Light emitting devices and methods
EP2721673A4 (en) ELECTRODE COMPRISING A TEMPORARY ACTUATING SUBSTRATE AND ASSOCIATED METHODS
EP2988351A4 (en) Conductive composition, conductive composition for forming base layer, collector with base layer for use in power storage device, electrode for use in power storage device, and power storage device
TW201130173A (en) Semiconductor light emitting device and method for manufacturing same
EP2544996A4 (en) PROCESS FOR THE PREPARATION OF GRAPHS, TRANSPARENT ELECTRODE AND ACTIVE LAYER THEREWITH, AND DISPLAY, ELECTRONIC DEVICE, OPTOELECTRONIC DEVICE, BATTERY, SOLAR CELL AND COLOR-SENSITIZED SOLAR CELL WITH THE ELECTRODE AND THE ACTIVE LAYER
WO2011099831A3 (ko) 그래핀을 이용한 유연성 투명 발열체 및 이의 제조 방법
EP2534699A4 (en) Metal substrate with insulation layer and manufacturing method thereof, semiconductor device and manufacturing method thereof, solar cell and manufacturing method thereof, electronic circuit and manufacturing method thereof, and light-emitting element and manufacturing method thereof
EP2657992A3 (en) Light emitting device and light emitting device package
EP3073523A4 (en) Through electrode substrate and semiconductor device using through electrode substrate
WO2012088481A3 (en) Heterojunction microwire array semiconductor devices
EP2562814A3 (en) Light emitting device and light emitting device package
EP2777049A4 (en) CONDUCTIVE PASTE, AND ELECTRONIC AND PHOTOPILE DEVICE COMPRISING AN ELECTRODE FORMED BY MEANS OF THE CONDUCTIVE PASTE
EP2671261A4 (en) SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED FROM DOPED SILICON INKS AND CORRESPONDING METHODS
WO2013002609A3 (en) Touch panel and method for manufacturing the same
JP2012209251A5 (ja) 発光素子および発光装置
EP2784808B8 (en) Electrical component resin, semiconductor device, and substrate
EP2642525A3 (en) Solar cell