AU2012339923B2 - Micro device transfer head - Google Patents

Micro device transfer head Download PDF

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Publication number
AU2012339923B2
AU2012339923B2 AU2012339923A AU2012339923A AU2012339923B2 AU 2012339923 B2 AU2012339923 B2 AU 2012339923B2 AU 2012339923 A AU2012339923 A AU 2012339923A AU 2012339923 A AU2012339923 A AU 2012339923A AU 2012339923 B2 AU2012339923 B2 AU 2012339923B2
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transfer head
micro
mesa structure
array
electrode
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AU2012339923A1 (en
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Andreas Bibl
John A. Higginson
Hsin-Hua Hu
Hung-Fai Stephen Law
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Apple Inc
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Apple Inc
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Abstract

A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

Description

WO 2013/074355 PCT/US2012/063990 MICRO DEVICE TRANSFER HEAD BACKGROUND RELATED APPLICATIONS [0001] This application claims the benefit of priority from U.S. Provisional Patent Application Serial No. 61/561,706 filed on November 18, 2011, U.S. Provisional Patent Application Serial No. 61/594,919 filed on February 3, 2012 and U.S. Provisional Patent Application Serial No. 61/597,109 filed on February 9, 2012 the full disclosures of which are incorporated herein by reference. FIELD [0002] The present invention relates to micro devices. More particularly embodiments of the present invention relate to a micro device transfer head and a method of transferring one or more micro devices to a receiving substrate. BACKGROUND INFORMATION [0003] Integration and packaging issues are one of the main obstacles for the commercialization of micro devices such as radio frequency (RF) microelectromechanical systems (MEMS) microswitches, light-emitting diode (LED) display systems, and MEMS or quartz-based oscillators. [0004] Traditional technologies for transferring of devices include transfer by wafer bonding from a transfer wafer to a receiving wafer. One such implementation is "direct printing" involving one bonding step of an array of devices from a transfer wafer to a receiving wafer, followed by removal of the transfer wafer. Another such implementation is "transfer printing" involving two bonding/de-bonding steps. In transfer printing a transfer wafer may pick up an array of devices from a donor wafer, and then bond the array of devices to a receiving wafer, followed by removal of the transfer wafer. [0005] Some printing process variations have been developed where a device can be selectively bonded and de-bonded during the transfer process. In both traditional and variations of the direct printing and transfer printing technologies, the transfer 1 1000882008 wafer is de-bonded from a device after bonding the device to the receiving wafer. In addition, the entire transfer wafer with the array of devices is involved in the transfer process. [0005A] Reference to any prior art in the specification is not an acknowledgment or suggestion that this prior art forms part of the common general knowledge in any jurisdiction or that this prior art could reasonably be expected to be understood, regarded as relevant, and/or combined with other pieces of prior art by a skilled person in the art. [0005B] As used herein, except where the context requires otherwise, the term "comprise" and variations of the term, such as "comprising", "comprises" and "comprised", are not intended to exclude further additives, components, integers or steps. SUMMARY OF THE INVENTION [0005C] According to a first aspect of the invention there is provided an electrostatic transfer head comprising: a base substrate; a mesa structure including sidewalls protruding away from the base substrate to provide a localized contact point for the electrostatic transfer head; a dielectric layer covering the mesa structure; and a conductive ground plane formed over the base substrate and surrounding the mesa structure. [0005D] According to a second aspect of the invention there is provided an electrostatic transfer head array comprising: a base substrate; an array of mesa structures, each mesa structure including sidewalls protruding away from the base substrate to provide a localized contact point for each electrostatic transfer head; a dielectric layer covering the array of mesa structures; and a conductive ground plane formed over the base substrate and surrounding the each of the mesa structures. [0006] A micro device transfer head and head array, and a method of transferring one or more micro devices to a receiving substrate are disclosed. For example, the receiving substrate may be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs), or a substrate with metal redistribution lines. [00071 In an embodiment, a micro device transfer head includes a base substrate, a mesa structure including sidewalls, at least one is electrode formed over the mesa 2 1000882008 structure, and a dielectric layer covering the electrode. For example, the micro device transfer head can incorporate a monopolar or bipolar electrode structure. The mesa structure can be separately or integrally formed with the base substrate. The sidewalls can be tapered and protrude away from the base substrate to a top surface of the mesa structure, with the electrode formed on the top surface. An electrode lead may extend from the electrode in order to make contact with wiring in the base substrate and connect the micro device transfer head to the working electronics of an electrostatic gripper assembly. The electrode leads can run from the electrode on the top surface of the mesa structure and along a sidewall of the mesa structure. The electrode lead can alternatively run underneath the mesa structure and connect to a via running through the mesa structure to the electrode. [0008] The electrode and electrode leads may be covered with a deposited dielectric layer. Suitable materials for the dielectric layer include, but are not limited to, aluminum oxide (A1 2 0 3 ) and tantalum oxide (Ta 2 0 5 ). Since the dielectric layer is deposited, the electrode and electrode leads may be formed of a material which can withstand high deposition temperatures, including high melting temperature metals such as platinum and refractory metals or refractory metal alloys such as titanium tungsten (TiW). [0009] In an embodiment, a method of transferring a micro device includes positioning a transfer head over a micro device connected to a carrier substrate. The 2A WO 2013/074355 PCT/US2012/063990 micro device is contacted with the transfer head and a voltage is applied to an electrode in the transfer head to create a grip pressure on the micro device. The transfer head picks up the micro device and then releases the micro device onto a receiving substrate. The voltage can be applied to the electrode prior to, while or after contacting the micro device with the transfer head. The voltage can be a constant current voltage, or alternating current voltage. In an embodiment, an alternating current voltage is applied to a bipolar electrode structure. In an embodiment, an operation is additionally performed to create a phase change in a bonding layer connecting the micro device to the carrier substrate prior to or while picking up the micro device. [0010] In an embodiment, the bonding layer is heated to create a phase change from solid to liquid in the bonding layer prior to or while picking up the micro device. Depending upon the operating conditions, a substantial portion of the bonding layer can be picked up and transferred with the micro device. A variety of operations can be performed to control the phase of the portion of the bonding layer when picking up, transferring, contacting the receiving substrate, and releasing the micro device and portion of the bonding layer on the receiving substrate. For example, the portion of the bonding layer which is picked up with the micro device can be maintained in the liquid state when contacting the receiving substrate and during the release operation onto the receiving substrate. In another embodiment, the portion of the bonding layer can be allowed to cool to a solid phase after being pick up. For example, the portion of the bonding layer can be in a solid phase prior to or during contacting the receiving substrate, and again melted to the liquid state during the release operation. A variety of temperature and material phase cycles can be performed in accordance with embodiments of the invention. [0011] In an embodiment, a method of transferring an array of micro devices includes positioning an array of transfer heads over an array of micro devices. The array of micro devices is contacted with the array of transfer heads, and a voltage is selectively applied to a portion of the array of transfer heads. Selectively applying a voltage may include applying a voltage to all of the transfer heads in the array, or to a portion corresponding to less than all of the transfer heads in the array. The corresponding portion of the array of micro devices is then picked up with the 3 WO 2013/074355 PCT/US2012/063990 portion of the array of transfer heads, and the portion of the array of micro devices is selectively released onto at least one receiving substrate. In an embodiment, the array of transfer heads may be rubbed on the array of micro devices while making contact in order to dislodge any particles which may be present on the contacting surface of either of the transfer heads or micro devices. In an embodiment, a phase change is created in an array of laterally separate locations of the bonding layer connecting the array of micro devices to the carrier substrate prior to picking up the array of micro devices. [0012] In an embodiment, a method of fabricating a micro device transfer head array includes forming an array of mesa structures on a base substrate, with each mesa structure including sidewalls. A separate electrode is formed over each mesa structure, and a dielectric layer is deposited over the array of mesa structures and each electrode. In an embodiment, the dielectric layer is deposited with atomic layer deposition (ALD), and may be pin-hole free. The dielectric layer may include one or multiple dielectric layers. A conformal passivation layer may optionally be grown or deposited over the base substrate and the array of mesa structures prior to forming the separate electrode over each corresponding mesa structure. In an embodiment, a conductive ground plane is formed over the dielectric layer and surrounding each of the mesa structures. BRIEF DESCRIPTION OF THE DRAWINGS [0013] HG. 1 is a cross-sectional side view illustration of a monopolar micro device transfer head in accordance with an embodiment of the invention. [0014] HG. 2 is an isometric view illustration of a monopolar micro device transfer head in accordance with an embodiment of the invention. [0015] HG. 3 is a cross-sectional side view illustration of a bipolar micro device transfer head in accordance with an embodiment of the invention. [0016] HG. 4 is an isometric view illustration of a bipolar micro device transfer head in accordance with an embodiment of the invention. [0017] HGS. 5-6 are top view illustrations of a bipolar micro device transfer head in accordance with an embodiment of the invention. 4 WO 2013/074355 PCT/US2012/063990 [0018] FIG. 7 is an isometric view illustration of a bipolar micro device transfer head including conductive vias in accordance with an embodiment of the invention. [0019] FIG. 8 is an isometric view illustration of a bipolar micro device transfer head array in accordance with an embodiment of the invention. [0020] FIG. 9 is an isometric view illustration of a bipolar micro device transfer head array including a conductive ground plane in accordance with an embodiment of the invention. [0021] FIG. 10 is a cross-sectional side view illustration of a bipolar micro device transfer head array including a conductive ground plane in accordance with an embodiment of the invention. [0022] FIG. 11 is a flow chart illustrating a method of picking up and transferring a micro device from a carrier substrate to a receiving substrate in accordance with an embodiment of the invention. [0023] FIG. 12 is a schematic illustration of an alternating voltage applied across a bipolar electrode in accordance with an embodiment of the invention. [0024] FIG. 13 is a schematic illustration of a constant voltage applied across a bipolar electrode in accordance with an embodiment of the invention. [0025] FIG. 14 is a schematic illustration of a constant voltage applied to a monopolar electrode in accordance with an embodiment of the invention. [0026] FIG. 15 is a flow chart illustrating a method of picking up and transferring a micro device from a carrier substrate to a receiving substrate in accordance with an embodiment of the invention. [0027] FIG. 16 is a flow chart illustrating a method of picking up and transferring an array of micro devices from a carrier substrate to at least one receiving substrate in accordance with an embodiment of the invention. [0028] FIG. 17 is a cross-sectional side view illustration of an array of micro device transfer heads in contact with an array of micro LED devices in accordance with an embodiment of the invention. [0029] FIG. 18 is a cross-sectional side view illustration of an array of micro device transfer heads in contact with an array of micro LED devices in accordance with an embodiment of the invention. 5 WO 2013/074355 PCT/US2012/063990 [0030] HG. 19 is a cross-sectional side view illustration of an array of micro device transfer heads picking up an array of micro LED devices in accordance with an embodiment of the invention. [0031] HG. 20 is a cross-sectional side view illustration of an array of micro device transfer heads picking up a portion of an array of micro LED devices in accordance with an embodiment of the invention. [0032] HG. 21 is a cross-sectional side view illustration of an array of micro device transfer heads with an array of micro LED devices positioned over a receiving substrate in accordance with an embodiment of the invention. [0033] HG. 22 is a cross-sectional side view illustration of a micro device selectively released onto a receiving substrate in accordance with an embodiment of the invention. [0034] HG. 23 is a graphical illustration showing the pressure required to overcome the force of surface tension to pick up a micro device of various dimensions in accordance with an embodiment of the invention. [0035] HG. 24 is a graphical illustration of the relationship between surface tension and increasing gap distance created during a pick up operation in accordance with an embodiment of the invention. [0036] HG. 25 is a graphical illustration of the relationship between viscous force pressures and increasing gap distance created during a pick up operation at various pull rates in accordance with an embodiment of the invention. [0037] HG. 26 is a graphical illustration obtained by modeling analysis showing the grip pressure exerted by a transfer head on a micro device as the transfer head is withdrawn from the micro device in accordance with an embodiment of the invention. [0038] FIG. 27 is a cross-sectional side view illustration of a variety of micro LED structures including contact openings with a smaller width than the top surface of the micro p-n diode in accordance with an embodiment of the invention. [0039] FIG. 28 is a cross-sectional side view illustration of a variety of micro LED structures including contact openings with a larger width than the top surface of the micro p-n diode in accordance with an embodiment of the invention. 6 WO 2013/074355 PCT/US2012/063990 [0040] FIG. 29 is a cross-sectional side view illustration of a variety of micro LED structures including contact openings with the same width as the top surface of the micro p-n diode in accordance with an embodiment of the invention. DETAILED DESCRIPTION OF THE INVENTION [0041] Embodiments of the present invention describe a micro device transfer head and head array, and method of transferring a micro device and an array of micro devices to a receiving substrate. For example, the receiving substrate may be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs), or a substrate with metal redistribution lines. In some embodiments, the micro devices and array of micro devices described herein may be any of the micro LED device structures illustrated in FIGS. 27 -29, and those described in related U.S. Provisional Application No. 61/561,706 and U.S. Provisional Application No. 61/594,919. While some embodiments of the present invention are described with specific regard to micro LEDs, it is to be appreciated that embodiments of the invention are not so limited and that certain embodiments may also be applicable to other micro devices such as diodes, transistors, ICs, and MEMS. [0042] In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present invention. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention. Reference throughout this specification to "one embodiment," "an embodiment" or the like means that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase "in one embodiment," "an embodiment" or the like in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the 7 WO 2013/074355 PCT/US2012/063990 particular features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments. [0043] The terms "over", "to", "between" and "on" as used herein may refer to a relative position of one layer with respect to other layers. One layer "over" or "on" another layer or bonded "to" another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer "between" layers may be directly in contact with the layers or may have one or more intervening layers. [0044] The terms "micro" device or "micro" LED structure as used herein may refer to the descriptive size of certain devices or structures in accordance with embodiments of the invention. As used herein, the terms "micro" devices or structures are meant to refer to the scale of 1 to 100 pm. However, it is to be appreciated that embodiments of the present invention are not necessarily so limited, and that certain aspects of the embodiments may be applicable to larger, and possibly smaller size scales. [0045] In one aspect, embodiments of the invention describe a manner for mass transfer of an array of pre-fabricated micro devices with an array of transfer heads. For example, the pre-fabricated micro devices may have a specific functionality such as, but not limited to, a LED for light-emission, silicon IC for logic and memory, and gallium arsenide (GaAs) circuits for radio frequency (RF) communications. In some embodiments, arrays of micro LED devices which are poised for pick up are described as having a 10 pm by 10 pm pitch, or 5 Pm by 5 pm pitch. At these densities a 6 inch substrate, for example, can accommodate approximately 165 million micro LED devices with a 10 pm by 10 pm pitch, or approximately 660 million micro LED devices with a 5 pm by 5 pm pitch. A transfer tool including an array of transfer heads matching the pitch of the corresponding array of micro LED devices can be used to pick up and transfer the array of micro LED devices to a receiving substrate. In this manner, it is possible to integrate and assemble micro LED devices into heterogeneously integrated systems, including substrates of any size ranging from micro displays to large area displays, and at high transfer rates. For example, a 1 cm by 1 cm array of micro device transfer heads can pick up and transfer more than 100,000 micro devices, with larger arrays of micro device transfer heads being capable of transferring more micro 8 1000636857 devices. Each transfer head in the array of transfer heads may also be independently controllable, which enables selective pick up and release of the micro devices. [00461 In one aspect, without being limited to a particular theory, embodiments of the invention describe micro device transfer heads and head arrays which operate in accordance with principles of electrostatic grippers, using the attraction of opposite charges to pick up micro devices. In accordance with embodiments of the present invention, a pull-in voltage is applied to a micro device transfer head in order to generate a grip force on a micro device and pick up the micro device. Grip force is proportional to charged plate area so is calculated as a pressure. According to ideal electrostatic theory, a non-conductive dielectric layer between a monopolar electrode and a conductive substrate yields a grip pressure in Pascal (Pa) in equation (1) of: P =[Eo/2][VEr/d] 2 (1) where E, = 8.85.1012, V = electrode-substrate voltage in volts (V), Er = dielectric constant, and d = dielectric thickness in meters (m). With a bipolar gripper using two grip electrodes the voltage (V) in the above equation is half of the voltage between electrodes A and B, [VA - VB] / 2. The substrate potential is centered at the average potential, [VA = VB]/2. This average is generally zero with VA = [-VB]. [00471 In another aspect, embodiments of the invention describe a bonding layer which can maintain a micro device on a carrier substrate during certain processing and handling operations, and upon undergoing a phase change provides a medium on which the micro device can be retained yet is also readily releasable from during a pick up operation. For example, the bonding layer may be remeltable or reflowable such that the bonding layer undergoes a phase change from solid to liquid state prior to or during the pick up operation. In the liquid state the bonding layer may retain the micro device in place on a carrier substrate while also providing a medium from which the micro device is readily releasable. Without being limited to a particular theory, in determining the grip pressure which is necessary to pick up the micro device from the carrier substrate the grip pressure should exceed the forces holding the micro device to the carrier substrate, which may include but are 9 WO 2013/074355 PCT/US2012/063990 not limited to, surface tension forces, capillary forces, viscous effects, elastic restoration forces, van-der-Waals forces, stiction and gravity. [0048] In accordance with embodiments of the invention, when the dimensions of a micro device are reduced below a certain range, the surface tension forces of the liquid bonding layer holding the micro device to the carrier substrate may become dominant over other forces holding the micro device. FIG. 23 is a graphical illustration of one embodiment obtained by modeling analysis showing the pressure required to overcome the force of surface tension to pick up a micro device of various dimensions, assuming a liquid indium (In) bonding layer with a surface tension of 560 mN/m at the melting temperature of 156.7 C. For example, referring to FIG. 23 an exemplary 10 p m by 10 p m wide micro device is retained on a carrier substrate with a surface tension pressure of approximately 2.2 atmospheres (atm) with an indium bonding layer having a liquid surface tension of 560 mN/m at its melting temperature of 156.7 C. This is significantly larger than the pressure due to gravity, which is approximately 1.8 x 10-6 atm for an exemplary 10 pm x 10 pm wide x 3 pm tall piece of gallium nitride (GaN). [0049] Surface tension pressures and viscous effects may also be dynamic during the pick up operation. FIG. 24 is a graphical illustration of one embodiment obtained by modeling analysis showing the relationship of surface tension and increasing gap distance created during the pick up operation of an exemplary 10 p m by 10 pm wide micro device retained on a carrier substrate with a molten indium (In) bonding layer. The gap distance referred to in FIG. 24 is the distance between the bottom of the micro device and the carrier substrate, and starts at 2 pm corresponding to an un-molten thickness of the In bonding layer. As illustrated in FIG. 24, a surface tension pressure of 2.2 atm is initially overcome by the grip pressure at the beginning of the pick up operation. As the micro device is then lifted from the carrier substrate, the surface tension rapidly falls, with the pressure leveling out as the micro device is lifted further away from the carrier substrate. [0050] FIG. 25 is a graphical illustration of one embodiment obtained by modeling analysis showing the relationship of viscous force pressures (atm) and increasing gap distance (pm) created during a pick up operation at various pull rates for an exemplary 10 pm by 10 pm micro device retained on a carrier substrate with a 10 1000636857 molten indium (In) bonding layer. The gap distance referred to in FIG. 25 is the distance between the bottom of the micro device and the carrier substrate, and starts at 2 ptm corresponding to an un-molten thickness of the In bonding layer. As illustrated, viscous force pressures are more apparent during faster lift speeds such as 1,000 mm/s than for slower lift speeds such as 0.1 min/s. Yet, the pressures generated from the viscous effects using the exemplary lift speeds illustrated in FIG. 25 are significantly less than the surface tension pressure generated and illustrated in FIG. 24 which suggests that surface tension pressure is the dominant pressure which must be overcome by the grip pressure during the pick up operation. [00511 If an air gap of size (g) is present between the dielectric layer of the micro device transfer head and a top conductive surface of the micro device then the grip pressure in equation (2) is: P = [Eo /2] [V r / (d+ r g)] 2 - - - - - (2) [00521 It is contemplated that an air gap can be present due to a variety of sources including, but not limited to, particulate contamination, warpage, and misalignment of either surface of the transfer head or micro device, or the presence of an additional layer on the transfer head or micro device, such as a lip of a conformal dielectric barrier layer around the top conductive surface of a micro device. In a embodiment, a lip of a conformal dielectric barrier layer may create both an air gap where a contact opening is formed and increase the effective thickness of the dielectric layer of the transfer head where the lip is present. [0053] As seen from equations (1) and (2) above, lower voltages may be utilized where no air gap is present between the micro device transfer head and micro device to be picked up. However, when an air gap is present this presents a series capacitance in which the air capacitance may compete with the dielectric layer capacitance. In order to compensate for the possibility of an air capacitance between any of an array of micro device transfer heads over a corresponding array of micro devices to be picked up, a higher operating voltage, higher dielectric constant for the dielectric material, or thinner dielectric material may be used to maximize the 11 1000636857 electric field. However, use of a higher electric field has limitations due to possible dielectric breakdown and arcing. [00541 FIG. 26 is a graphical illustration of one embodiment obtained by modeling analysis showing the grip pressure exerted by a transfer head on a micro device as the transfer head is withdrawn from the top conductive surface of the micro device, corresponding to an increasing air gap size. The different lines correspond to different Ta 2
O
5 dielectric layer thicknesses between 0.5 pim and 2.0 V.m on the transfer head, with the electric field being kept constant. As illustrated, no appreciable effect on grip pressure is observed at these conditions below air gap sizes of approximately 1 rim (0.001 ptm), and even as high as 10 nm (0.01 pLrm) for some conditions. However, it is to be appreciated that the tolerable air gap can be increased or decreased by changing the conditions. Thus, in accordance with some embodiments of the invention a certain amount of air gap tolerance is possible during the pick up operation and actual contact with the micro device transfer head and the top conductive surface of the micro device may not be necessary. [00551 Now assuming that the grip pressure required to pick up the micro device from the carrier substrate should exceed the sum of pressures retaining the micro device on the carrier substrate (as well as any pressure reduction due to air gap) it is possible to derive the interrelationship of operating voltage, dielectric constant and dielectric thickness of the dielectric material in the micro device transfer head by solving the grip pressure equations. For purposes of clarity, assuming that the air gap distance is zero, for a monopolar electrode this becomes: sqrt (P*2/ E= V E / d ----- (3) [0056] Exemplary ranges of calculated dielectric thickness values are provided in Table 1 for desired grip pressures of 2 atm (202650 Pa) and 20 atm (2026500 Pa) for A1 2 0 3 and Ta 2
O
5 dielectric materials between operating voltages between 25 V and 300 V in order to illustrate the interdependence of grip pressure, voltage, dielectric constant and dielectric thickness in accordance with an embodiment of the invention. The dielectric constants provided are approximate, and it is understood that the values can vary depending upon manner of formation. 12 1000636857 Table 1. Dielectric Voltage (V) Dielectric Dielectric Material constant, Er thickness, d (Hz - MHz (microns) range) Grip pressure = 2 atm A1 2 0 3 25 9.8 1.1 A1 2 0 3 100 9.8 4.6 A1 2 0 3 300 9.8 13.7 Ta 2
O
5 25 25 2.9 Ta 2 0 5 100 25 11.7 Ta 2 0 5 300 25 35.0 Grip pressure = 20 atm A1 2 0 3 25 9.8 0.4 Al 2 0 3 100 9.8 1.4 Al 2 0 3 300 9.8 4.3 Ta 2
O
5 25 25 0.9 Ta 2
O
5 100 25 3.7 Ta 2 0 5 300 25 11.1 [0057] Since the grip pressure is proportional to the inverse square of the dielectric thickness, the calculated dielectric thicknesses in Table 1 represents the maximum thicknesses which can be formed to achieve the necessary grip pressure with the set operating voltage. Thicknesses lower than those provided in Table 1 may result in higher grip pressures at the set operating voltage, however lower thicknesses increase the applied electric field across the dielectric layer which requires that the dielectric material possess a dielectric strength sufficient to withstand the applied electric field without shorting. It is to be appreciated that the grip pressure, voltage, dielectric constant and dielectric thickness values provided in Table 1 are exemplary in nature, and provided in order to provide a foundation for working ranges of the micro device transfer head in accordance with embodiments of the invention. The relationship between grip pressure, voltage, dielectric constant and dielectric thickness values provided in Table 1 has been illustrated in accordance with ideal electrostatic theory, and embodiments of the invention are not limited by such. [00581 Referring now to FIG. 1, a side view illustration is provided of a monopolar micro device transfer head and head array in accordance with an embodiment of the invention. As shown, each monopolar device transfer head 100 may include a base 13 1000636857 substrate 102, a mesa structure 104 including a top surface 108 and sidewalls 106, an optional passivation layer 110 formed over the mesa structure 104 and including a top surface 109 and sidewalls 107, an electrode 116 formed over the mesa structure 104 (and optional passivation layer 110) and a dielectric layer 120 with a top surface 121 covering the electrode 116. Base substrate 102 may be formed from a variety of materials such as silicon, ceramics and polymers which are capable of providing structural support. In an embodiment, base substrate has a conductivity between 103 and 1018 ohm-cm. Base substrate 102 may additionally include wiring (not shown) to connect the micro device transfer heads 100 to the working electronics of an electrostatic gripper assembly. [00591 Mesa structure 104 may be formed using suitable processing techniques, and may be formed from the same or different material than base substrate 102. In one embodiment, mesa structure 104 is integrally formed with base substrate 102, for example by using lithographic patterning and etching, or casting techniques. In an embodiment, anisotropic etching techniques can be utilized to form tapered sidewalls 106 for mesa structure 104. In another embodiment, mesa structure 104 may be deposited or grown, and patterned on top of the base substrate 102. In an embodiment, mesa structure 104 is a patterned oxide layer, such as silicon dioxide, formed over a semiconductor substrate, such as silicon. [0060] In one aspect, the mesa structures 104 generate a profile which protrudes away from the base substrate so as to provide a localized contact point to pick up a specific micro device during a pick up operation. In an embodiment, mesa structures 104 have a height of approximately 1 tm to 5 gm, or more specifically approximately 2 pim. Specific dimensions of the mesa structures 104 may depend upon the specific dimensions of the micro devices to be picked up, as well as the thickness of any layers formed over the mesa structures. In an embodiment, the height, width, and planarity of the array of mesa structures 104 on the base substrate 102 are uniform across the base substrate so that each micro device transfer head 100 is capable of making contact with each corresponding micro device during the pick up operation. In an embodiment, the width across the top surface 121 of each micro device transfer head is slightly larger, approximately the same, or less than the width of the top surface of the each micro device in the corresponding micro device 14 WO 2013/074355 PCT/US2012/063990 array so that a transfer head does not inadvertently make contact with a micro device adjacent to the intended corresponding micro device during the pick up operation. As described in further detail below, since additional layers 110, 112, 120 may be formed over the mesa structure 104, the width of the mesa structure may account for the thickness of the overlying layers so that the width across the top surface 121 of each micro device transfer head is slightly larger, approximately the same, or less than the width of the top surface of the each micro device in the corresponding micro device array. [0061] Still referring to FIG. 1, mesa structure 104 has a top surface 108, which may be planar, and sidewalls 106. In an embodiment, sidewalls 106 may be tapered up to 10 degrees, for example. Tapering the sidewalls 106 may be beneficial in forming the electrodes 116 and electrode leads 114 as described further below. A passivation layer 110 may then be optionally deposited or grown over the base substrate 102 and array of mesa structures 104. Passivation layer 110 can be deposited by a variety of suitable techniques such as chemical vapor deposition (CVD), sputtering, or atomic layer deposition (ALD). In an embodiment, passivation layer 110 may be 0.5 pm - 2.0 pm thick oxide such as, but not limited to, silicon oxide (SiO 2 ), aluminum oxide (A1 2 0 3 ) or tantalum oxide (Ta 2 0 5 ). [0062] A conductive layer 112 may then be deposited over the array of mesa structures 104 and optional passivation layer 110, and patterned to form electrodes 116 and electrode leads 114. For example, a lift off technique can be utilized to form the electrodes 116 and electrode leads 114 in which a resist layer is deposited and patterned over the substrate, followed by deposition of a metal layer, and lift off of the resist and portion of the metal layer on the resist leaving behind the desired pattern. Alternatively, metal layer deposition followed by patterning and etching can be performed to achieve the desired pattern. Electrode leads 114 may run from the electrode 116 over the top surface 108 of a mesa structure 104 (and top surface 109 of optional passivation layer 110) and along a sidewall 106 of the mesa structure 104 (and along a sidewall 107 of optional passivation layer 110). Conductive layer 112 used to form the electrodes 116 and electrode leads 114 may be a single layer or multiple layers. A variety of conductive materials including metals, metal alloys, refractory metals, and refractory metal alloys may be employed 15 WO 2013/074355 PCT/US2012/063990 to form conductive layer 112. In an embodiment, the conductive layer 112 has a thickness up to 5,000 angstroms (0.5 pm). In an embodiment, the conductive layer 112 includes a high melting temperature metal such as platinum or a refractory metal or refractory metal alloy. For example, conductive layer may include platinum, titanium, vanadium, chromium, zirconium, niobium, molybdenum, ruthenium, rhodium, hafnium, tantalum, tungsten, rhenium, osmium, iridium and alloys thereof. Refractory metals and refractory metal alloys generally exhibit higher resistance to heat and wear than other metals. In an embodiment, conductive layer 112 is an approximately 500 angstrom (0.05 pm) thick titanium tungsten (TiW) refractory metal alloy. [0063] A dielectric layer 120 is then deposited over the electrodes 116 and other exposed layers on the base substrate 102. In an embodiment, the dielectric layer 120 has a suitable thickness and dielectric constant for achieving the required grip pressure of the micro device transfer head 100, and sufficient dielectric strength to not break down at the operating voltage. The dielectric layer may be a single layer or multiple layers. In an embodiment, the dielectric layer is 0.5 pm - 2.0 pm thick, though thickness may be more or less depending upon the specific topography of the transfer head 100 and underlying mesa structure 104. Suitable dielectric materials may include, but are not limited to, aluminum oxide (A1 2 0 3 ) and tantalum oxide (Ta 2 0 5 ). Referring back to Table 1 above, embodiments of A1 2 0 3 dielectric layers with applied electric fields (determined by dividing the voltage by dielectric thickness) of 22 V/pm to 71 V/pm and Ta 2 0 5 dielectric layers with applied electric fields of 9 V/pm to 28 V/pm were provided. In accordance with embodiments of the invention, the dielectric layer 120 possesses a dielectric strength greater than the applied electric field so as to avoid shorting of the transfer head during operation. Dielectric layer 120 can be deposited by a variety of suitable techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) such as sputtering. Dielectric layer 120 may additionally be annealed following deposition. In one embodiment, the dielectric layer 120 possesses a dielectric strength of at least 400 V/pm. Such a high dielectric strength can allow for the use of a thinner dielectric layer than the calculated thicknesses provided in exemplary Table 1. Techniques such as ALD can be utilized to deposit 16 WO 2013/074355 PCT/US2012/063990 uniform, conformal, dense, and/or pin-hole free dielectric layers with good dielectric strength. Multiple layers can also be utilized to achieve such a pin-hole free dielectric layer 120. Multiple layers of different dielectric materials may also be utilized to form dielectric layer 120. In an embodiment, the underlying conductive layer 112 includes platinum or a refractory metal or refractory metal alloy possessing a melting temperature above the deposition temperature of the dielectric layer material(s) so as to not be a limiting factor in selecting the deposition temperature of the dielectric layer. In an embodiment, following the deposition of dielectric layer 120 a thin coating (not illustrated) may be formed over the dielectric layer 120 to provide a specific stiction coefficient to add lateral friction and keep the micro devices from being knocked off the transfer head during the pick up operation. In such an embodiment, the additional thin coating replaces top surface 121 as the contacting surface, and this surface retains the dimensional array requirements described herein. Furthermore, the additional coating can affect the dielectric properties of the micro device transfer head which may affect the operability of the micro device transfer head. In an embodiment, the additional coating thickness can be minimal (e.g. below 10 nm) so as to have little to no appreciable effect on the grip pressure. [0064] FIG. 2 is a close-up isometric view of electrode 116 and electrode lead 114 formed over an optional passivation layer 110 covering a mesa structure 104. For purposes of clarity, the overlying dielectric layer 120 is not illustrated, and the optional passivation layer 110 and mesa structure 104 are illustrated as a single mesa structure/passivation layer 104/110. In an exemplary embodiment, where the passivation layer 110 and dielectric layer 120 are both 0.5 p m thick, the top surface 108/109 of the mesa structure/passivation layer 104/110 onto which the electrode 116 is formed is approximately 7 p m x 7 p m in order to achieve a 8 p m x 8 p m top surface of the transfer head 100. In accordance with an embodiment, the electrode 116 covers the maximum amount of surface area of the top surface 108/109 of the mesa structure/passivation layer 104/110 as possible while remaining within patterning tolerances. Minimizing the amount of free space increases the capacitance, and resultant grip pressure which can be achieved by the micro device transfer head. While a certain amount of free space is illustrated on the top surface 17 WO 2013/074355 PCT/US2012/063990 108/109 of the mesa structure/passivation layer 104/110 in FIG. 2, the electrode 116 may cover the entire top surface 108/109. The electrode 116 may also be slightly larger than the top surface 108/109, and partially extend down the sidewalls 106/107 of the mesa structure/passivation layer 104/110 to ensure complete coverage of the top surface 108/109. It is to be appreciated that the mesa array may have a variety of different pitches, and that embodiments of the invention are not limited to the exemplary 7 pm x 7 pm top surface of the mesa structure/passivation layer 104/110 in a 10 pm pitch. [0065] Referring now to FIG. 3, a side view illustration is provided of a bipolar micro device transfer head 100 and head array in accordance with an embodiment of the invention. As shown, the bipolar device transfer head 100 may include a base substrate 102, a mesa structure 104 including a top surface 108 and sidewalls 106, passivation layer 110 including a top surface 109 and sidewalls 107, a pair of electrodes 1 16A, 1 16B and electrode leads 1 14A, 1 14B formed over the mesa structure 104, optional passivation layer 110 and a dielectric layer 120 covering the pair of electrodes 1 16A, 1 16B. [0066] FIG. 4 is a close-up isometric view of electrodes 11 6A, 11 6B and electrode leads 1 14A, 1 14B formed over an optional passivation layer 110 covering a mesa structure 104. For purposes of clarity, the overlying dielectric layer 120 is not illustrated, and the optional passivation layer 110 and mesa structure 104 are illustrated as a single mesa structure/passivation layer 104/110. FIG. 4 differs slightly from FIG. 3 in that the electrode leads 114A, 114B are illustrated as running along a single sidewall rather than on opposite sidewalls of the mesa structure/passivation layer 104/110. Electrode leads 1 14A, 1 14B may run along any suitable sidewall in accordance with embodiments of the invention. In an exemplary embodiment, where the top surface 108/109 of the mesa structure/passivation layer 104/110 is approximately 7 pm x 7 pm corresponding to a mesa array with a 10 pm pitch the electrodes may cover the maximum amount of the surface area of the top surface 108/109 of the mesa structure/passivation layer 104/110 as possible while still providing separation between electrodes 1 16A, 1 16B. The minimum amount of separation distance may be balanced by considerations for maximizing surface area, while avoiding overlapping electric fields from the electrodes. For example, the 18 WO 2013/074355 PCT/US2012/063990 electrodes 1 16A, 1 16B may be separated by 0.5 p m or less, and the minimum separation distance may be limited by the height of the electrodes. In an embodiment, the electrodes are slightly longer than the top surface 108/109 in one direction, and partially extend down the sidewalls of the mesa structure/passivation layer 104/110 to ensure maximum coverage of the top surface 108/109. It is to be appreciated that the mesa array may have a variety of different pitches, and that embodiments of the invention are not limited to the exemplary 7 pm x 7 pm top surface of the mesa structure/passivation layer 104/110 in a 10 pm pitch. [0067] Referring now to FIGS. 5-6, top view illustrations of electrodes 1 16A, 1 16B of a bipolar micro device transfer head are provided in accordance with embodiments of the invention. Thus far, mesa structure 104 has been described as a single mesa structure as shown in FIG. 5. However, embodiments of the invention are not so limited. In the embodiment illustrated in FIG. 6, each electrode 116 is formed on a separate mesa structure 104A, 104B separated by a trench 105. An optional passivation layer 110 (not illustrated) can cover both mesa structures 104A, 104B. [0068] Referring now to FIG. 7, an isometric view illustration of an alternative electrode lead configuration is provided in accordance with an embodiment of the invention. In such an embodiment the electrode leads 114A, 114B run underneath a portion of the mesa structure 104, and conductive vias 117A, 117B run through the mesa structure 104 (and optional passivation layer 110 not illustrated) connecting the electrodes 1 16A, 1 16B to the respective electrode leads 1 14A, 1 14B. In such an embodiment, electrode leads 114A, 114B may be formed prior to formation of mesa structure 104, and may be formed of the same or different conductive material as electrode leads 114A, 114B and electrodes 116A, 116B. While vias 117A, 117B are illustrated with regard to a bipolar electrode structure in FIG. 7 it is to be appreciated that the above described via or vias may also be integrated into monopolar electrode structures. [0069] Referring now to FIGS. 8-10, an embodiment of the invention is illustrated in which a conductive ground plane is formed over the dielectric layer and surrounding the array of mesa structures. FIG. 8 is an isometric view illustration of an array of micro device transfer heads 100 with a bipolar electrode configuration as 19 WO 2013/074355 PCT/US2012/063990 previously described with regard to FIG. 4. For purposes of clarity, the optional underlying passivation layer and overlying dielectric layer have not been illustrated. Referring now to FIGS. 9-10, a conductive ground plane 130 is formed over the dielectric layer 120 and surrounding the array of mesa structures 104. The presence of ground plane 130 may assist in the prevention of arcing between transfer heads 100, particularly during the application of high voltages. Ground plane 130 may be formed of a conductive material which may be the same as, or different as the conductive material used to form the electrodes, or vias. Ground plane 130 may also be formed of a conductive material having a lower melting temperature than the conductive material used to form the electrodes since it is not necessary to deposit a dielectric layer of comparable quality (e.g. dielectric strength) to dielectric layer 120 after the formation of ground plane 130. [0070] FIG. 11 is a flow chart illustrating a method of picking up and transferring a micro device from a carrier substrate to a receiving substrate in accordance with an embodiment of the invention. At operation 1110 a transfer head is positioned over a micro device connected to a carrier substrate. The transfer head may comprise a mesa structure, an electrode over the mesa structure, and a dielectric layer covering the electrode as described in the above embodiments. Thus, the transfer head may have a monopolor or bipolar electrode configuration, as well as any other structural variations as described in the above embodiments. The micro device is then contacted with the transfer head at operation 1120. In an embodiment, the micro device is contacted with the dielectric layer 120 of the transfer head. In an alternative embodiment, the transfer head is positioned over the micro device with a suitable air gap separating them which does not significantly affect the grip pressure, for example, 1 nm (0.00 1 p m) or 10 nm (0.01 p m). At operation 1130 a voltage is applied to the electrode to create a grip pressure on the micro device, and the micro device is picked up with the transfer head at operation 1140. The micro device is then released onto a receiving substrate at operation 1150. [0071] While operations 1110 - 1150 have been illustrated sequentially in FIG. 11, it is to be appreciated that embodiments are not so limited and that additional operations may be performed and certain operations may be performed in a different sequence. For example, in one embodiment, after contacting the micro device with 20 WO 2013/074355 PCT/US2012/063990 the transfer head, the transfer head is rubbed across a top surface of the micro device in order to dislodge any particles which may be present on the contacting surface of either of the transfer head or micro device. In another embodiment, an operation is performed to create a phase change in the bonding layer connecting the micro device to the carrier substrate prior to or while picking up the micro device. If a portion of the bonding layer is picked up with the micro device, additional operations can be performed to control the phase of the portion of the bonding layer during subsequent processing. [0072] Operation 1130 of applying the voltage to the electrode to create a grip pressure on the micro device can be performed in various orders. For example, the voltage can be applied prior to contacting the micro device with the transfer head, while contacting the micro device with the transfer head, or after contacting the micro device with the transfer head. The voltage may also be applied prior to, while, or after creating the phase change in the bonding layer. [0073] FIG. 12 is a schematic illustration of an alternating voltage applied across a bipolar electrode with the transfer head in contact with a micro device in accordance with an embodiment of the invention. As illustrated, a separate alternating current (AC) voltage source may be applied to each electrode lead 1 14A, 1 14B with an alternating voltage applied across the pair of electrodes 11 6A, 11 6B so that at a particular point in time when a negative voltage is applied to electrode 1 16A, a positive voltage is applied to electrode 1 16B, and vice versa. Releasing the micro device from the transfer head may be accomplished with a variety of methods including turning off the voltage sources, lowering the voltage across the pair of electrodes, changing a waveform of the AC voltage, and grounding the voltage source. FIG. 13 is a schematic illustration of a constant voltage applied to a bipolar electrode in accordance with an embodiment of the invention. In the particular embodiment illustrated, a negative voltage is applied to electrode 11 6A while a positive voltage is applied to electrode 1 16B. FIG. 14 is a schematic illustration of a constant voltage applied to a monopolar electrode in accordance with an embodiment of the invention. Once the transfer head picks up the micro device illustrated in FIG. 14, the amount of time the transfer head can hold the micro device may be a function of the discharge rate of the dielectric layer since only single 21 WO 2013/074355 PCT/US2012/063990 voltage is applied to electrode 116. Releasing the micro device from the transfer head illustrated in FIG. 14 may be accomplished by turning off the voltage source, grounding the voltage source, or reversing the polarity of the constant voltage. [0074] In the particular embodiments illustrated in FIGS. 12-14, the micro devices 200 are those illustrated in FIG. 27, example 270. Though the micro devices illustrated in FIGS. 12-14 may be from any of the micro LED device structures illustrated in FIGS. 27 -29, and those described in related U.S. Provisional Application No. 61/561,706 and U.S. Provisional Application No. 61/594,919. For example, a micro LED device 200 may include a micro p-n diode 235, 250 and a metallization layer 220, with the metallization layer between the micro p-n diode 235, 250 and a bonding layer 210 formed on a substrate 201. In an embodiment, the micro p-n diode 250 includes a top n-doped layer 214, one or more quantum well layers 216, and a lower p-doped layer 218. The micro p-n diodes can be fabricated with straight sidewalls or tapered sidewalls. In certain embodiments, the micro p-n diodes 250 possess outwardly tapered sidewalls 253 (from top to bottom). In certain embodiments, the micro p-n diodes 235 possess inwardly tapered sidewalls 253 (from top to bottom). The metallization layer 220 may include one or more layers. For example, the metallization layer 220 may include an electrode layer and a barrier layer between the electrode layer and the bonding layer. The micro p-n diode and metallization layer may each have a top surface, a bottom surface and sidewalls. In an embodiment, the bottom surface 251 of the micro p-n diode 250 is wider than the top surface 252 of the micro p-n diode, and the sidewalls 253 are tapered outwardly from top to bottom. The top surface of the micro p-n diode 235 may be wider than the bottom surface of the p-n diode, or approximately the same width. In an embodiment, the bottom surface 251 of the micro p-n diode 250 is wider than the top surface 221 of the metallization layer 220. The bottom surface of the micro p-n diode may also be wider than the top surface of the metallization layer, or approximately the same width as the top surface of the metallization layer. [0075] A conformal dielectric barrier layer 260 may optionally be formed over the micro p-n diode 235, 250 and other exposed surfaces. The conformal dielectric barrier layer 260 may be thinner than the micro p-n diode 235, 250, metallization layer 220 and optionally the bonding layer 210 so that the conformal dielectric 22 1000636857 barrier layer 260 forms an outline of the topography it is formed on. In an embodiment, the micro p-n diode 235, 250 is several microns thick, such as 3 tm, the metallization layer 220 is 0.1 prm - 2 tm thick, and the bonding layer 210 is 0.1 m - 2 ptm thick. In an embodiment, the conformal dielectric barrier layer 260 is approximately 50 - 600 angstroms thick aluminum oxide (Al 2 0 3 ). Conformal dielectric barrier layer 260 may be deposited by a variety of suitable techniques such as, but not limited to, atomic layer deposition (ALD). The conformal dielectric barrier layer 260 may protect against charge arcing between adjacent micro p-n diodes during the pick up process, and thereby protect against adjacent micro p-n diodes from sticking together during the pick up process. The conformal dielectric barrier layer 260 may also protect the sidewalls 253, quantum well layer 216 and bottom surface 251, of the micro p-n diodes from contamination which could affect the integrity of the micro p-n diodes. For example, the conformal dielectric barrier layer 260 can function as a physical barrier to wicking of the bonding layer material 210 up the sidewalls and quantum layer 216 of the micro p-n diodes 250. The conformal dielectric barrier layer 260 may also insulate the micro p-n diodes 250 once placed on a receiving substrate. In an embodiment, the conformal dielectric barrier layer 260 span sidewalls 253 of the micro p-n diode, and may cover a quantum well layer 216 in the micro p-n diode. The conformal dielectric barrier layer may also partially span the bottom surface 251 of the micro p-n diode, as well as span sidewalls of the metallization layer 220. In some embodiments, the conformal dielectric barrier layer also spans sidewalls of a patterned bonding layer 210. A contact opening 262 may be formed in the conformal dielectric barrier layer 260 exposing the top surface 252 of the micro p-n diode. [0076] Referring to FIG. 27, the contact opening 262 may have a smaller width than the top surface 252 of the micro p-n diode and the conformal dielectric barrier layer 260 forms a lip around the edges of the top surface 252 of the micro p-n diode. Referring to FIG. 28, the contact opening 262 may have a slightly larger width than the top surface of the micro p-n diode. In such an embodiment, the contact opening 262 exposes the top surface 252 of the micro p-n diode and an upper portion of the sidewalls 253 of the micro p-n diode, while the conformal dielectric barrier layer 260 covers and insulates the quantum well layer(s) 216. Referring to FIG. 29, the 23 WO 2013/074355 PCT/US2012/063990 conformal dielectric layer 260 may have approximately the same width as the top surface of the micro p-n diode. The conformal dielectric layer 260 may also span along a bottom surface 251 of the micro p-n diodes illustrated in FIGS. 27-29. [0077] In an embodiment, conformal dielectric barrier layer 260 is formed of the same material as dielectric layer 120 of the bonding head. Depending upon the particular micro LED device structure, the conformal dielectric barrier layer 260 may also span sidewalls of the bonding layer 210, as well as the carrier substrate and posts, if present. Bonding layer 210 may be formed from a material which can maintain the micro LED device 200 on the carrier substrate 201 during certain processing and handling operations, and upon undergoing a phase change provide a medium on which the micro LED device 200 can be retained yet also be readily releasable from during a pick up operation. For example, the bonding layer may be remeltable or reflowable such that the bonding layer undergoes a phase change from solid to liquid state prior to or during the pick up operation. In the liquid state the bonding layer may retain the micro LED device in place on the carrier substrate while also providing a medium from which the micro LED device 200 is readily releasable. In an embodiment, the bonding layer 210 has a liquidus temperature or melting temperature below approximately 350 C, or more specifically below approximately 200 C. At such temperatures the bonding layer may undergo a phase change without substantially affecting the other components of the micro LED device. For example, the bonding layer may be formed of a metal or metal alloy, or a thermoplastic polymer which is removable. For example, the bonding layer may include indium, tin or a thermoplastic polymer such as polyethylene or polypropylene. In an embodiment, the bonding layer may be conductive. For example, where the bonding layer undergoes a phase change from solid to liquid in response to a change in temperature a portion of the bonding layer may remain on the micro LED device during the pick up operation. In such an embodiment, it may be beneficial that the bonding layer is formed of a conductive material so that it does not adversely affect the micro LED device when it is subsequently transferred to a receiving substrate. In this case, the portion of conductive bonding layer remaining on the micro LED device during the transfer may aid in bonding the micro LED device to a conductive pad on a receiving substrate. In a specific embodiment, the 24 1000636857 bonding layer may be formed of indium, which has a melting temperature of 156.7 'C. The bonding layer may be laterally continuous across the substrate 201, or may also be formed in laterally separate locations. For example, a laterally separate location of the bonding layer may have a width which is less than or approximately the same width as the bottom surface of the micro p-n diode or metallization layer. In some embodiments, the micro p-n diodes may optionally be formed on posts 202 on the substrate. [00781 Solders may be suitable materials for bonding layer 210 since many are generally ductile materials in their solid state and exhibit favorable wetting with semiconductor and metal surfaces. A typical alloy melts not a single temperature, but over a temperature range. Thus, solder alloys are often characterized by a liquidus temperature corresponding to the lowest temperature at which the alloy remains liquid, and a solidus temperature corresponding to the highest temperature at which the alloy remains solid. An exemplary list of low melting solder materials which may be utilized with embodiments of the invention are provided in Table 2. Table 2. Chemical composition Liquidus Temperature ( 0 C) Solidus Temperature (OC) 100 In 156.7 156.7 66.31n33.7Bi 72 72 51In32.5Bil6.5Sn 60 60 57Bi26In17Sn 79 79 54.02Bi29.68In16.3Sn 81 81 67Bi331n 109 109 50In50Sn 125 118 52Sn48In 131 118 58Bi42Sn 138 138 97In3Ag 143 143 58Sn421n 145 118 99.3In0.7Ga 150 150 95In5Bi 150 125 99.4In0.6Ga 152 152 99.61n0.4Ga 153 153 99.5InO.5Ga 154 154 60Sn4OBi 170 138 lOOSn 232 232 95Sn5Sb 240 235 25 1000636857 [0079] An exemplary list thermoplastic polymers which may be utilized with embodiments of the invention are provided in Table 3. Table 3. Polymer Melting Temperature ('C) Acrylic (PMMA) 130-140 Polyoxymethylene (POM or Acetal) 166 Polybutylene terephthalate (PBT) 160 Polycaprolactone (PCL) 62 Polyethylene terephthalate (PET) 260 Polycarbonate (PC) 267 Polyester 260 Polyethylene (PE) 105-130 Polyetheretherketone (PEEK) 343 Polylactic acid (PLA) 50-80 Polypropylene (PP) 160 Polystyrene (PS) 240 Polyvinylidene chloride (PVDC) 185 [00801 FIG. 15 is a flow chart illustrating a method of picking up and transferring a micro device from a carrier substrate to a receiving substrate in accordance with an embodiment of the invention. At operation 1510 a transfer head is positioned over a micro device connected to a carrier substrate with a bonding layer. The transfer head may be any transfer head described herein. The micro device may be any of the micro LED device structures illustrated in FIGS. 27-29, and those described in related U.S. Provisional Application No. 61/561,706 and U.S. Provisional Application No. 61/594,919. The micro device is then contacted with the transfer head at operation 1520. In an embodiment, the micro device is contacted with the dielectric layer 120 of the transfer head. In an alternative embodiment, the transfer head is positioned over the micro device with a suitable air gap separating them which does not significantly affect the grip pressure, for example, 1 nm (0.001 ptm) or 10 nm (0.01 [tm). At operation 1525 an operation is performed to create a phase change in the bonding layer 210 from solid to liquid state. For example, the operation may include heating an In bonding layer at or above the melting temperature of 156.7 C. In another embodiment, operation 1525 can be performed 26 WO 2013/074355 PCT/US2012/063990 prior to operation 1520. At operation 1530 a voltage is applied to the electrode to create a grip pressure on the micro device, and the micro device and a substantial portion of the bonding layer 210 are picked up with the transfer head at operation 1540. For example, approximately half of the bonding layer 210 may be picked up with the micro device. In an alternative embodiment, none of the bonding layer 210 is picked up with the transfer head. At operation 1545 the micro device and portion of the bonding layer 210 are placed in contact with a receiving substrate. The micro device and portion of the bonding layer 210 are then released onto the receiving substrate at operation 1550. A variety of operations can be performed to control the phase of the portion of the bonding layer when picking up, transferring, contacting the receiving substrate, and releasing the micro device and portion of the bonding layer 210 on the receiving substrate. For example, the portion of the bonding layer which is picked up with the micro device can be maintained in the liquid state during the contacting operation 1545 and during the release operation 1550. In another embodiment, the portion of the bonding layer can be allowed to cool to a solid phase after being picked up. For example, the portion of the bonding layer can be in a solid phase during contacting operation 1545, and again melted to the liquid state prior to or during the release operation 1550. A variety of temperature and material phase cycles can be performed in accordance with embodiments of the invention. [0081] FIG. 16 is a flow chart illustrating a method of picking up and transferring an array of micro devices from a carrier substrate to at least one receiving substrate in accordance with an embodiment of the invention. At operation 1610 an array of transfer heads is positioned over an array of micro devices, with each transfer head having a mesa structure, an electrode over the mesa structure, and a dielectric layer covering the electrode. At operation 1620 the array of micro devices are contacted with the array of transfer heads. In an alternative embodiment, the array of transfer heads is positioned over the array of micro devices with a suitable air gap separating them which does not significantly affect the grip pressure, for example, 1 nm (0.001 pm) or 10 nm (0.01 pm). FIG. 17 is a side view illustration of an array of micro device transfer heads 100 in contact with an array of micro LED devices 200 in accordance with an embodiment of the invention. As illustrated in FIG. 17, the 27 WO 2013/074355 PCT/US2012/063990 pitch (P) of the array of transfer heads 100 matches the pitch of the micro LED devices 200, with the pitch (P) of the array of transfer heads being the sum of the spacing (S) between transfer heads and width (W) of a transfer head. [0082] In one embodiment, the array of micro LED devices 200 have a pitch of 10 pm, with each micro LED device having a spacing of 2 pm and a maximum width of 8 pm. In an exemplary embodiment, assuming a micro p-n diode 250 with straight sidewalls the top surface of the each micro LED device 200 has a width of approximately 8 pm. In such an exemplary embodiment, the width of the top surface 121 of a corresponding transfer head 100 is approximately 8 p m or smaller so as to avoid making inadvertent contact with an adjacent micro LED device. In another embodiment, the array of micro LED devices 200 may have a pitch of 5 pram, with each micro LED device having a spacing of 2 pm and a maximum width of 3 pm. In an exemplary embodiment, the top surface of the each micro LED device 200 has a width of approximately 3 pm. In such an exemplary embodiment, the width of the top surface 121 of a corresponding transfer head 100 is approximately 3 pm or smaller so as to avoid making inadvertent contact with an adjacent micro LED device 200. However, embodiments of the invention are not limited to these specific dimensions, and may be any suitable dimension. [0083] FIG. 18 is a side view illustration of an array of micro device transfer heads in contact with an array of micro LED devices 200 in accordance with an embodiment of the invention. In the embodiment illustrated in FIG. 18, the pitch (P) of the transfer heads is an integer multiple of the pitch of the array of micro devices. In the particular embodiment illustrated, the pitch (P) of the transfer heads is 3 times the pitch of the array of micro LED devices. In such an embodiment, having a larger transfer head pitch may protect against arcing between transfer heads. [0084] Referring again to FIG. 16, at operation 1630 a voltage is selectively applied to a portion of the array of transfer heads 100. Thus, each transfer head 100 may be independently operated. At operation 1640 a corresponding portion of the array of micro devices is picked up with the portion of the array of transfer heads to which the voltage was selectively applied. In one embodiment, selectively applying a voltage to a portion of the array of transfer heads means applying a voltage to every 28 WO 2013/074355 PCT/US2012/063990 transfer head in the array of transfer heads. FIG. 19 is a side view illustration of every transfer head in an array of micro device transfer heads picking up an array of micro LED devices 200 in accordance with an embodiment of the invention. In another embodiment, selectively applying a voltage to a portion of the array of transfer heads means applying a voltage to less than every transfer head (e.g. a subset of transfer heads) in the array of transfer heads. FIG. 20 is a side view illustration of a subset of the array of micro device transfer heads picking up a portion of an array of micro LED devices 200 in accordance with an embodiment of the invention. In a particular embodiment illustrated in FIGS. 19-20, the pick up operation includes picking up the micro p-n diode 250, the metallization layer 220 and a portion of the conformal dielectric barrier layer 260 for the micro LED device 200. In a particular embodiment illustrated in FIGS. 19-20, the pick up operation includes picking up a substantial portion of the bonding layer 210. Accordingly, any of the embodiments described with regard to FIGS. 16-22 may also be accompanied by controlling the temperature of the portion of the bonding layer 210 as described with regard to FIG. 15. For example, embodiments described with regard to FIGS. 16-22 may include performing an operation to create a phase change from solid to liquid state in a plurality of locations of the bonding layer connecting the array of micro devices to the carrier substrate 201 prior to picking up the array of micro devices. In an embodiment, the plurality of locations of the bonding layer can be regions of the same bonding layer. In an embodiment, the plurality of locations of the bonding layer can be laterally separate locations of the bonding layer. [0085] At operation 1650 the portion of the array of micro devices is then released onto at least one receiving substrate. Thus, the array of micro LEDs can all be released onto a single receiving substrate, or selectively released onto multiple substrates. For example, the receiving substrate may be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or ICs, or a substrate with metal redistribution lines. Release may be accomplished by affecting the applied voltage with any of the manners described with regard to FIGS. 12-14. [0086] FIG. 21 is a side view illustration of an array of micro device transfer heads holding a corresponding array of micro LED devices 200 over a receiving substrate 29 WO 2013/074355 PCT/US2012/063990 301 including a plurality of driver contacts 310. The array of micro LED devices 200 may then be placed into contact with the receiving substrate and then selectively released. FIG. 22 is a side view illustration of a single micro LED device 200 selectively released onto the receiving substrate 301 over a driver contact 310 in accordance with an embodiment of the invention. In another embodiment, more than one micro LED device 200 is released, or the entire array of micro LED devices 200 are released. [0087] In utilizing the various aspects of this invention, it would become apparent to one skilled in the art that combinations or variations of the above embodiments are possible for forming a micro device transfer head and head array, and for transferring a micro device and micro device array. Although the present invention has been described in language specific to structural features and/or methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described. The specific features and acts disclosed are instead to be understood as particularly graceful implementations of the claimed invention useful for illustrating the present invention. 30

Claims (20)

1. An electrostatic transfer head comprising: a base substrate; a mesa structure including sidewalls protruding away from the base substrate to provide a localized contact point for the electrostatic transfer head; a dielectric layer covering the mesa structure; and a conductive ground plane formed over the base substrate and surrounding the mesa structure.
2. The electrostatic transfer head of claim 1, wherein the mesa structure is integrally formed with the base substrate.
3. The electrostatic transfer head of claim 1, wherein the base substrate and the mesa structure each comprise silicon.
4. The electrostatic transfer head of claim 1, further comprising an electrode formed over a top surface of the mesa structure, and the dielectric layer covers the electrode.
5. The electrostatic transfer head of claim 4, further comprising an electrode lead running from the electrode on the top surface of the mesa structure and along a sidewall of the mesa structure.
6 The electrostatic transfer head of claim 5, wherein the dielectric layer covers the electrode lead along the sidewall of the mesa structure.
7. The electrostatic transfer head of claim 4, further comprising a via through the mesa structure connecting the electrode to an electrode lead. 31 1000636857
8. The electrostatic transfer head of claim 4, wherein the electrode comprises a material selected from the group consisting of platinum, titanium, vanadium, chromium, zirconium, niobium, molybdenum, ruthenium, rhodium, hafnium, tantalum, tungsten, rhenium, osmium, iridium and alloys thereof.
9. The electrostatic transfer head of claim 4, wherein the electrode comprises TiW.
10. The electrostatic transfer head of claim 1, wherein the dielectric layer comprises a dielectric material selected from the group consisting of A1 2 0 3 and Ta 2 0 5 .
11. The electrostatic transfer head of claim 1, further comprising a pair of electrodes formed on a top surface of the mesa structure, wherein the dielectric layer covers the pair of electrodes.
12. The electrostatic transfer head of claim 11, further comprising a pair of electrode leads, wherein each electrode lead runs from a corresponding electrode on the top surface of the mesa structure along a sidewall of the mesa structure.
13. The electrostatic transfer head of claim 12, wherein the dielectric layer covers the pair of electrode leads along the sidewall of the mesa structure.
14. The electrostatic transfer head of claim 11, further comprising a via through the mesa structure connecting one of the pair of electrodes to an electrode lead.
15. An electrostatic transfer head array comprising: a base substrate; an array of mesa structures, each mesa structure including sidewalls protruding away from the base substrate to provide a localized contact point for each electrostatic transfer head; a dielectric layer covering the array of mesa structures; and 32 1000636857 a conductive ground plane formed over the base substrate and surrounding the each of the mesa structures.
16. The electrostatic transfer head array of claim 15, wherein each mesa structure is integrally formed with the base substrate.
17. The electrostatic transfer head array of claim 15, wherein the base substrate and each mesa structure each comprise silicon.
18. The electrostatic transfer head array of claim 15, further comprising an electrode formed over a top surface of each mesa structure, and the dielectric layer covers each electrode.
19. The electrostatic transfer head array of claim 18, wherein each electrode comprises a material selected from the group consisting of platinum, titanium, vanadium, chromium, zirconium, niobium, molybdenum, ruthenium, rhodium, hafnium, tantalum, tungsten, rhenium, osmium, iridium and alloys thereof.
20. The electrostatic transfer head array of claim 15, wherein the dielectric layer comprises a dielectric material selected from the group consisting of A1 2 0 3 and Ta 2 O 5 . 33
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US201161561706P 2011-11-18 2011-11-18
US61/561,706 2011-11-18
US201261594919P 2012-02-03 2012-02-03
US61/594,919 2012-02-03
US201261597109P 2012-02-09 2012-02-09
US61/597,109 2012-02-09
US13/372,310 2012-02-13
US13/372,277 2012-02-13
US13/372,310 US8333860B1 (en) 2011-11-18 2012-02-13 Method of transferring a micro device
US13/372,292 US9620478B2 (en) 2011-11-18 2012-02-13 Method of fabricating a micro device transfer head
US13/372,292 2012-02-13
US13/372,277 US8646505B2 (en) 2011-11-18 2012-02-13 Micro device transfer head
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Families Citing this family (212)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8877648B2 (en) 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8518204B2 (en) 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8426227B1 (en) 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US8333860B1 (en) 2011-11-18 2012-12-18 LuxVue Technology Corporation Method of transferring a micro device
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US9034754B2 (en) 2012-05-25 2015-05-19 LuxVue Technology Corporation Method of forming a micro device transfer head with silicon electrode
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
US9557215B2 (en) 2012-08-17 2017-01-31 Massachusetts Institute Of Technology Phonon-recyling light-emitting diodes
US8791530B2 (en) 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
US9162880B2 (en) * 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US8941215B2 (en) 2012-09-24 2015-01-27 LuxVue Technology Corporation Micro device stabilization post
US8835940B2 (en) 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
US9255001B2 (en) 2012-12-10 2016-02-09 LuxVue Technology Corporation Micro device transfer head array with metal electrodes
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
US9166114B2 (en) 2012-12-11 2015-10-20 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging cavity
US9105714B2 (en) 2012-12-11 2015-08-11 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging bollards
US9314930B2 (en) 2012-12-14 2016-04-19 LuxVue Technology Corporation Micro pick up array with integrated pivot mount
US9391042B2 (en) 2012-12-14 2016-07-12 Apple Inc. Micro device transfer system with pivot mount
US9308649B2 (en) 2013-02-25 2016-04-12 LuxVue Techonology Corporation Mass transfer tool manipulator assembly
US9095980B2 (en) * 2013-02-25 2015-08-04 LuxVue Technology Corporation Micro pick up array mount with integrated displacement sensor
KR101787860B1 (en) * 2013-02-25 2017-10-18 애플 인크. Mass transfer tool manipulator assembly and micro pick up array mount with integrated displacement sensor
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
US8791474B1 (en) 2013-03-15 2014-07-29 LuxVue Technology Corporation Light emitting diode display with redundancy scheme
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9217541B2 (en) 2013-05-14 2015-12-22 LuxVue Technology Corporation Stabilization structure including shear release posts
US9136161B2 (en) 2013-06-04 2015-09-15 LuxVue Technology Corporation Micro pick up array with compliant contact
WO2014201187A2 (en) 2013-06-12 2014-12-18 Rohinni, Inc. Keyboard backlighting with deposited light-generating sources
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US8928021B1 (en) 2013-06-18 2015-01-06 LuxVue Technology Corporation LED light pipe
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
EP3033776A4 (en) 2013-08-16 2017-01-25 Massachusetts Institute of Technology Thermo-electrically pumped light-emitting diodes
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
KR102179953B1 (en) 2014-06-18 2020-11-18 엑스-셀레프린트 리미티드 Micro assembled led displays
US9358775B2 (en) 2014-07-20 2016-06-07 X-Celeprint Limited Apparatus and methods for micro-transfer-printing
GB201413578D0 (en) 2014-07-31 2014-09-17 Infiniled Ltd A colour iled display on silicon
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US10543486B2 (en) 2014-10-31 2020-01-28 eLux Inc. Microperturbation assembly system and method
US10236279B2 (en) 2014-10-31 2019-03-19 eLux, Inc. Emissive display with light management system
US10535640B2 (en) 2014-10-31 2020-01-14 eLux Inc. System and method for the fluidic assembly of micro-LEDs utilizing negative pressure
US10242977B2 (en) 2014-10-31 2019-03-26 eLux, Inc. Fluid-suspended microcomponent harvest, distribution, and reclamation
US10319878B2 (en) 2014-10-31 2019-06-11 eLux, Inc. Stratified quantum dot phosphor structure
US10381332B2 (en) 2014-10-31 2019-08-13 eLux Inc. Fabrication method for emissive display with light management system
US10520769B2 (en) 2014-10-31 2019-12-31 eLux, Inc. Emissive display with printed light modification structures
US9825202B2 (en) 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
US10446728B2 (en) 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
US10381335B2 (en) 2014-10-31 2019-08-13 ehux, Inc. Hybrid display using inorganic micro light emitting diodes (uLEDs) and organic LEDs (OLEDs)
US10418527B2 (en) 2014-10-31 2019-09-17 eLux, Inc. System and method for the fluidic assembly of emissive displays
CN104465474B (en) * 2014-11-14 2017-09-15 昆山工研院新型平板显示技术中心有限公司 Display device transfers positioner and its method
US9607638B1 (en) 2014-11-19 2017-03-28 Seagate Technology Llc Recording head with an on-wafer integrated laser
US9576595B1 (en) 2014-11-19 2017-02-21 Seagate Technology Llc Transfer printing an epitaxial layer to a read/write head to form an integral laser
US10069029B1 (en) 2014-11-19 2018-09-04 Seagate Technology Llc Transfer-printed photonics
US10984821B1 (en) 2014-11-19 2021-04-20 Seagate Technology Llc Transfer-printed near-field transducer and heat sink
US9607907B2 (en) 2014-12-01 2017-03-28 Industrial Technology Research Institute Electric-programmable magnetic module and picking-up and placement process for electronic devices
US9773711B2 (en) 2014-12-01 2017-09-26 Industrial Technology Research Institute Picking-up and placing process for electronic devices and electronic module
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
WO2016154956A1 (en) 2015-04-01 2016-10-06 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
US10804127B2 (en) 2015-04-01 2020-10-13 Apple Inc. Electrostatic cleaning device
KR101614370B1 (en) * 2015-04-07 2016-04-21 엘지전자 주식회사 Semiconductor light emitting device, transfer head of the semiconductor light emitting device, and method for transferring the semiconductor light emitting device
CN105493297B (en) * 2015-05-21 2018-09-11 歌尔股份有限公司 Transfer method, manufacturing method, device and the electronic equipment of micro- light emitting diode
EP3221882A4 (en) * 2015-07-14 2018-05-02 Goertek Inc. Assembling method, manufacturing method, device and electronic apparatus of flip-die
EP3323145A4 (en) 2015-07-14 2018-05-23 Goertek Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-led
US10141287B2 (en) 2015-07-14 2018-11-27 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-LED
GB201512600D0 (en) * 2015-07-17 2015-08-26 Koniku Ltd Cell culture, transport and investigation
US9704821B2 (en) 2015-08-11 2017-07-11 X-Celeprint Limited Stamp with structured posts
TWI566918B (en) * 2015-07-29 2017-01-21 財團法人工業技術研究院 Three dimensional printing system
US9969078B2 (en) * 2015-08-03 2018-05-15 Mikro Mesa Technology Co., Ltd. Transfer head array and transferring method
US10373856B2 (en) 2015-08-03 2019-08-06 Mikro Mesa Technology Co., Ltd. Transfer head array
KR101718717B1 (en) * 2015-08-11 2017-04-04 (주)다원넥스뷰 Probe Bonding Device and Probe Bonding Method Using the Same
US10179731B2 (en) 2015-08-17 2019-01-15 Mikro Mesa Technology Co., Ltd. Transfer head array
US10020420B2 (en) 2015-08-18 2018-07-10 Goertek Inc. Repairing method, manufacturing method, device and electronic apparatus of micro-LED
JP2018506166A (en) 2015-08-18 2018-03-01 ゴルテック．インク Pre-exclusion method, manufacturing method, apparatus and electronic apparatus for micro light-emitting diode
US10950583B2 (en) 2015-08-26 2021-03-16 Lg Electronics Inc. Transfer head and transfer system for semiconductor light-emitting device and method for transferring semiconductor light-emitting device
KR102402189B1 (en) * 2015-08-26 2022-05-25 엘지전자 주식회사 Transfer unit for micro device
US10297719B2 (en) 2015-08-27 2019-05-21 Mikro Mesa Technology Co., Ltd. Micro-light emitting diode (micro-LED) device
KR102402999B1 (en) * 2015-08-31 2022-05-30 삼성디스플레이 주식회사 Display apparatus and method of manufacturing the same
CN105518888B (en) * 2015-09-09 2018-06-12 歌尔股份有限公司 Restorative procedure, manufacturing method, device and the electronic equipment of micro- light emitting diode
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
JP6237826B2 (en) * 2015-09-30 2017-11-29 日亜化学工業株式会社 Package, light emitting device, and manufacturing method thereof
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
JP2018515942A (en) 2015-10-20 2018-06-14 ゴルテック インコーポレイテッド Micro light-emitting diode transport method, manufacturing method, apparatus, and electronic apparatus
EP3248226B1 (en) 2015-11-04 2020-02-26 Goertek Inc. Micro-led transferring method and manufacturing method of micro-led device
KR102427644B1 (en) 2015-11-16 2022-08-02 삼성전자주식회사 Light source, method of manufacturing the same, and display apparatus having the same
KR20170059068A (en) 2015-11-19 2017-05-30 삼성전자주식회사 Lighting source module, display panel and display apparatus
CN113421839B (en) 2015-12-23 2022-03-18 歌尔股份有限公司 Micro light emitting diode transfer method and manufacturing method
KR102298484B1 (en) 2016-01-15 2021-09-03 로히니, 엘엘씨. Apparatus and method for backlighting through a cover on the device
EP3420582A1 (en) * 2016-02-25 2019-01-02 X-Celeprint Limited Efficiently micro-transfer printing micro-scale devices onto large-format substrates
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
KR102562627B1 (en) 2016-03-21 2023-08-03 삼성디스플레이 주식회사 Display device
KR101754528B1 (en) * 2016-03-23 2017-07-06 한국광기술원 Transfer assembly with dry adhesion structure and method for transferring led structure assembly using the same and led structure assembly
US10622700B2 (en) 2016-05-18 2020-04-14 X-Celeprint Limited Antenna with micro-transfer-printed circuit element
CN108698813B (en) * 2016-06-02 2023-01-20 歌尔股份有限公司 MEMS device and electronic equipment
US9997399B2 (en) 2016-08-16 2018-06-12 Mikro Mesa Technology Co., Ltd. Method for transferring semiconductor structure
CN109923680B (en) * 2016-11-07 2021-05-18 歌尔股份有限公司 Micro light emitting diode transfer method and manufacturing method
US10783917B1 (en) 2016-11-29 2020-09-22 Seagate Technology Llc Recording head with transfer-printed laser diode unit formed of non-self-supporting layers
WO2018208332A2 (en) 2017-02-17 2018-11-15 Koniku, Inc. Systems for detection
US20180240931A1 (en) * 2017-02-23 2018-08-23 Novatek Microelectronics Corp. Micro-device panel and manufacturing process thereof
TWI624044B (en) 2017-03-15 2018-05-11 啟端光電股份有限公司 Micro device transfer system
TWI623053B (en) 2017-04-12 2018-05-01 宏碁股份有限公司 Method of transferring micro devices and micro device transfer apparatus
TWI605536B (en) 2017-04-12 2017-11-11 財團法人工業技術研究院 Magnetic transfer module and method for transferring electronic element
US10468397B2 (en) 2017-05-05 2019-11-05 X-Celeprint Limited Matrix addressed tiles and arrays
US10604843B2 (en) * 2017-05-10 2020-03-31 Xerox Corporation High registration particles-transferring system
US10734269B1 (en) * 2017-06-07 2020-08-04 Apple Inc. Micro device metal joint process
KR101937036B1 (en) 2017-06-28 2019-04-09 한국광기술원 Method for transferring led structure assembly and led structure assembly
US11227787B2 (en) 2017-07-14 2022-01-18 Industrial Technology Research Institute Transfer support and transfer module
US10431483B2 (en) 2017-07-14 2019-10-01 Industrial Technology Research Institute Transfer support and transfer module
CN109256354B (en) * 2017-07-14 2021-01-12 财团法人工业技术研究院 Transfer support and transfer module
KR101959057B1 (en) 2017-07-21 2019-03-18 한국광기술원 Transfering method and apparatus of micro LED chip
TWI633618B (en) * 2017-08-02 2018-08-21 李美燕 Integrated microgripper, method of manufacturing the same and microgripper array and transfer system using the same
KR102572669B1 (en) 2017-08-14 2023-08-31 삼성전자주식회사 Transfering apparatus for electrical element
KR102123348B1 (en) 2017-09-28 2020-06-16 시바우라 메카트로닉스 가부시끼가이샤 Device and method for mounting element and method for manufacturing a substrate on which an element is mounted
US10748792B2 (en) 2017-10-13 2020-08-18 Maven Optronics Co., Ltd. Method and system for mass arrangement of micro-component devices
TWI647810B (en) * 2017-10-13 2019-01-11 行家光電股份有限公司 Giant array method and system for micro components
TWI654465B (en) * 2017-11-13 2019-03-21 友達光電股份有限公司 Transposition head and transposition device
TWI626772B (en) 2017-11-13 2018-06-11 友達光電股份有限公司 Transfer device
US10836200B2 (en) 2017-11-13 2020-11-17 X Display Company Technology Limited Rigid micro-modules with ILED and light conductor
CN107978548B (en) * 2017-11-20 2019-07-05 厦门市三安光电科技有限公司 The flood tide transfer method of microcomponent
TWI637481B (en) 2017-11-29 2018-10-01 財團法人工業技術研究院 Semiconductor structure, light-emitting device and manufacturing method for the same
TWI660448B (en) * 2017-12-19 2019-05-21 英屬開曼群島商錼創科技股份有限公司 Structure with micro device
US10236195B1 (en) 2017-12-20 2019-03-19 Mikro Mesa Technology Co., Ltd. Method for transferring device
WO2019132050A1 (en) * 2017-12-26 2019-07-04 박일우 Led display device and method for manufacturing same
CN110034058A (en) * 2018-01-11 2019-07-19 美科米尚技术有限公司 Transposition head array
US10325889B1 (en) 2018-01-12 2019-06-18 Mikro Mesa Technology Co., Ltd. Display device including LED devices with selective activation function
US11423928B1 (en) 2018-01-19 2022-08-23 Seagate Technology Llc Processing for forming single-grain near-field transducer
KR20190091022A (en) 2018-01-26 2019-08-05 주식회사 싸인랩 Method and apparatus for displaying Character Floating Hologram by Depth Video
US10937674B2 (en) * 2018-02-13 2021-03-02 Mikro Mesa Technology Co., Ltd. Method for transferring micro device
US11069376B1 (en) 2018-02-21 2021-07-20 Seagate Technology Llc Waveguide with optical isolator for heat-assisted magnetic recording
US10593582B2 (en) * 2018-02-26 2020-03-17 Mikro Mesa Technology Co., Ltd. Transfer head and method for transferring micro devices
US10593581B2 (en) * 2018-02-26 2020-03-17 Mikro Mesa Technology Co., Ltd. Transfer head and method for transferring micro devices
US11189605B2 (en) 2018-02-28 2021-11-30 X Display Company Technology Limited Displays with transparent bezels
KR102076904B1 (en) 2018-03-16 2020-02-12 한국광기술원 Led transfer tool
KR102486822B1 (en) 2018-03-29 2023-01-10 삼성전자주식회사 Chip transfer device and chip transfering method using the same
US10910355B2 (en) 2018-04-30 2021-02-02 X Display Company Technology Limited Bezel-free displays
KR20190133988A (en) 2018-05-24 2019-12-04 (주)피엔티 Micro-LED On-Board Placing method and Placing device
US10832934B2 (en) 2018-06-14 2020-11-10 X Display Company Technology Limited Multi-layer tethers for micro-transfer printing
KR20200005237A (en) * 2018-07-06 2020-01-15 (주)포인트엔지니어링 Micro led transfer head and micro led transfer system using the same
KR102558296B1 (en) 2018-07-10 2023-07-24 삼성전자주식회사 Electronic apparatus, method for manufacturing led module and computer-readable recording medium
JP7132040B2 (en) * 2018-08-30 2022-09-06 芝浦メカトロニクス株式会社 Device mounting apparatus and device mounting substrate manufacturing method
US11387029B2 (en) 2018-09-12 2022-07-12 LuxNour Technologies Inc. Apparatus for transferring plurality of micro devices and methods of fabrication
TWI676980B (en) * 2018-09-27 2019-11-11 友達光電股份有限公司 Display
KR102590229B1 (en) 2018-10-15 2023-10-17 삼성전자주식회사 Light emitting diode, manufacturing method of light emitting diode
US10573544B1 (en) 2018-10-17 2020-02-25 X-Celeprint Limited Micro-transfer printing with selective component removal
US10796938B2 (en) 2018-10-17 2020-10-06 X Display Company Technology Limited Micro-transfer printing with selective component removal
CN111129057B (en) * 2018-10-31 2023-06-20 成都辰显光电有限公司 Micro light emitting diode array device, manufacturing method and transferring method
CN111128832B (en) * 2018-10-31 2021-10-22 成都辰显光电有限公司 Micro-component transfer device and method for manufacturing the same
CN111129235B (en) * 2018-10-31 2021-10-22 成都辰显光电有限公司 Batch transfer method of micro-elements
KR20200052044A (en) 2018-11-06 2020-05-14 삼성전자주식회사 Display apparatus
CN109545731B (en) * 2018-11-20 2021-12-28 合肥京东方显示技术有限公司 Transfer head, manufacturing method thereof, transfer method and transfer device
CN111243999B (en) * 2018-11-29 2022-10-28 成都辰显光电有限公司 Transfer device and transfer method for micro-component
US20210002128A1 (en) 2018-12-03 2021-01-07 X-Celeprint Limited Enclosed cavity structures
US11274035B2 (en) 2019-04-24 2022-03-15 X-Celeprint Limited Overhanging device structures and related methods of manufacture
US11282786B2 (en) 2018-12-12 2022-03-22 X Display Company Technology Limited Laser-formed interconnects for redundant devices
CN109661163B (en) * 2018-12-20 2019-08-13 广东工业大学 A kind of temperature control adhesive Micro-LED flood tide transfer method
US11483937B2 (en) 2018-12-28 2022-10-25 X Display Company Technology Limited Methods of making printed structures
CN109742051A (en) * 2019-01-02 2019-05-10 京东方科技集团股份有限公司 Device preparation method, transfer printing head and its control method, controller and transfer device
KR102548400B1 (en) * 2019-01-04 2023-06-27 주식회사 나노엑스 Led transport method
TWI690102B (en) 2019-01-04 2020-04-01 友達光電股份有限公司 Light emitting apparatus and manufacturing method thereof
US11322460B2 (en) 2019-01-22 2022-05-03 X-Celeprint Limited Secure integrated-circuit systems
US11251139B2 (en) 2019-01-22 2022-02-15 X-Celeprint Limited Secure integrated-circuit systems
KR20200094498A (en) 2019-01-30 2020-08-07 삼성전자주식회사 Micro led transfer device comprising mask and micro led transferring method using the same
US10748793B1 (en) 2019-02-13 2020-08-18 X Display Company Technology Limited Printing component arrays with different orientations
US11088121B2 (en) 2019-02-13 2021-08-10 X Display Company Technology Limited Printed LED arrays with large-scale uniformity
KR102169271B1 (en) 2019-03-08 2020-10-23 한국광기술원 Light emitting device structure transfer apparatus
US11094870B2 (en) 2019-03-12 2021-08-17 X Display Company Technology Limited Surface-mountable pixel packages and pixel engines
US11164934B2 (en) 2019-03-12 2021-11-02 X Display Company Technology Limited Tiled displays with black-matrix support screens
JP7228130B2 (en) * 2019-04-10 2023-02-24 大日本印刷株式会社 Holding member, transfer member, method for manufacturing transfer member, and method for manufacturing light-emitting substrate
CN110033704B (en) * 2019-04-19 2022-07-19 京东方科技集团股份有限公司 Transfer device and transfer method
KR20200126234A (en) 2019-04-29 2020-11-06 삼성전자주식회사 Micro led transferring method and display module manufactured threrby
KR20200128987A (en) 2019-05-07 2020-11-17 삼성전자주식회사 Micro led transferring method and display module manufactured threrby
KR20200142685A (en) 2019-06-13 2020-12-23 삼성전자주식회사 Micro led transferring method and display module manufactured threrby
US11488943B2 (en) 2019-06-14 2022-11-01 X Display Company Technology Limited Modules with integrated circuits and devices
US10944027B2 (en) 2019-06-14 2021-03-09 X Display Company Technology Limited Pixel modules with controllers and light emitters
US11101417B2 (en) 2019-08-06 2021-08-24 X Display Company Technology Limited Structures and methods for electrically connecting printed components
US11362243B2 (en) * 2019-10-09 2022-06-14 Lumileds Llc Optical coupling layer to improve output flux in LEDs
US11637540B2 (en) 2019-10-30 2023-04-25 X-Celeprint Limited Non-linear tethers for suspended devices
US11127889B2 (en) 2019-10-30 2021-09-21 X Display Company Technology Limited Displays with unpatterned layers of light-absorbing material
US11626856B2 (en) 2019-10-30 2023-04-11 X-Celeprint Limited Non-linear tethers for suspended devices
WO2021114028A1 (en) * 2019-12-09 2021-06-17 重庆康佳光电技术研究院有限公司 Transfer unit of miniature light-emitting diode, display module and display device
CN113035736A (en) * 2019-12-09 2021-06-25 群创光电股份有限公司 Method for manufacturing electronic device
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
US11315909B2 (en) 2019-12-20 2022-04-26 X Display Company Technology Limited Displays with embedded light emitters
CN111146136A (en) * 2019-12-24 2020-05-12 南京中电熊猫平板显示科技有限公司 Micro device transfer head and manufacturing method thereof
US11037912B1 (en) 2020-01-31 2021-06-15 X Display Company Technology Limited LED color displays with multiple LEDs connected in series and parallel in different sub-pixels of a pixel
WO2021183644A1 (en) 2020-03-10 2021-09-16 Lumileds Llc Method of manufacturing an augmented led array assembly
US11538849B2 (en) 2020-05-28 2022-12-27 X Display Company Technology Limited Multi-LED structures with reduced circuitry
CN112967983B (en) * 2020-09-21 2022-05-20 重庆康佳光电技术研究院有限公司 Transfer system and transfer method
CN112992759B (en) * 2020-10-16 2022-04-19 重庆康佳光电技术研究院有限公司 Device transfer equipment, preparation method thereof and device transfer method
CN112133667B (en) * 2020-11-25 2021-03-16 武汉大学 Micro device transfer device and method
US20220199450A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Carrier for microelectronic assemblies having direct bonding
US20220199449A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Carrier for microelectronic assemblies having direct bonding
US20220199453A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Carrier for microelectronic assemblies having direct bonding
JP7222149B1 (en) * 2021-03-26 2023-02-14 デクセリアルズ株式会社 Display device manufacturing method

Family Cites Families (216)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717743A (en) 1970-12-07 1973-02-20 Argus Eng Co Method and apparatus for heat-bonding in a local area using combined heating techniques
US3935986A (en) 1975-03-03 1976-02-03 Texas Instruments Incorporated Solid state bonding process employing the isothermal solidification of a liquid interface
JPS5469957A (en) 1977-11-15 1979-06-05 Nec Home Electronics Ltd Production of semiconductor device
JPS57149741A (en) * 1981-03-11 1982-09-16 Hitachi Ltd Bonding method for semiconductor pellet
JPS5850582A (en) 1981-09-22 1983-03-25 株式会社東芝 Display using light emitting diode
JPS58180043A (en) 1982-04-15 1983-10-21 Nec Corp Manufacture of semiconductor device
JPS5965490A (en) 1982-10-05 1984-04-13 Ricoh Co Ltd Manufacture of semiconductor light emitting element array
JPS61102787A (en) 1984-10-26 1986-05-21 Matsushita Electric Ind Co Ltd Light emitting semiconductor device
US5131582A (en) 1989-06-30 1992-07-21 Trustees Of Boston University Adhesive metallic alloys and methods of their use
IT1244119B (en) 1990-11-29 1994-07-05 Cons Ric Microelettronica PROCESS OF INTRODUCTION AND DIFFUSION OF PLATINUM IONS INTO A SLICE OF SILICON
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
JPH0513820A (en) 1991-07-02 1993-01-22 Omron Corp Semiconductor device
JPH0563242A (en) 1991-08-29 1993-03-12 Nippon Steel Corp Lead frame for light emitting diode and light emitting diode lamp
US5156998A (en) 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JP2797958B2 (en) 1993-04-27 1998-09-17 日本電気株式会社 Optical semiconductor device bonding structure and bonding method
JPH06334217A (en) 1993-05-25 1994-12-02 Victor Co Of Japan Ltd Led array device
JPH0760675A (en) 1993-08-27 1995-03-07 Tokin Corp Electrostatic attracting hand
US5435857A (en) 1994-01-06 1995-07-25 Qualitek International, Inc. Soldering composition
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
JP3271475B2 (en) 1994-08-01 2002-04-02 株式会社デンソー Electrical element joining material and joining method
TW311927B (en) 1995-07-11 1997-08-01 Minnesota Mining & Mfg
JP3132353B2 (en) 1995-08-24 2001-02-05 松下電器産業株式会社 Chip mounting device and mounting method
KR100186752B1 (en) 1995-09-04 1999-04-15 황인길 Semiconductor chip bonding method
US5888847A (en) 1995-12-08 1999-03-30 Lsi Logic Corporation Technique for mounting a semiconductor die
US5858099A (en) 1996-04-09 1999-01-12 Sarnoff Corporation Electrostatic chucks and a particle deposition apparatus therefor
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
JPH1126733A (en) 1997-07-03 1999-01-29 Seiko Epson Corp Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic equipment
KR100278137B1 (en) 1997-09-04 2001-01-15 가나이 쓰도무 Method of mounting semiconductor device and system thereof, method of manufacturing semiconductor device isolator and IC card
US5903428A (en) 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
JP3406207B2 (en) 1997-11-12 2003-05-12 シャープ株式会社 Method of forming transistor array panel for display
JPH11168132A (en) * 1997-12-05 1999-06-22 Hitachi Ltd Electrostatic adsorption device
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6080650A (en) 1998-02-04 2000-06-27 Texas Instruments Incorporated Method and apparatus for attaching particles to a substrate
JP4083866B2 (en) 1998-04-28 2008-04-30 シャープ株式会社 Semiconductor laser element
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
JPH11333765A (en) 1998-05-26 1999-12-07 Tokai Rika Co Ltd Micro-manipulator having force sensor
KR100443840B1 (en) * 1998-09-01 2005-01-13 엘지.필립스 엘시디 주식회사 Fabricating Method of Liquid Crystal Display Device
JP3504543B2 (en) 1999-03-03 2004-03-08 株式会社日立製作所 Semiconductor device separation method and device, and semiconductor device mounting method
JP2001144168A (en) 1999-11-16 2001-05-25 Nikon Corp Electrostatic chuck, charged particle beam exposure system having the same, and wafer holding method and device manufacturing method using the chuck
CN1292493C (en) 1999-12-03 2006-12-27 美商克立股份有限公司 Enhanced light extration in LEDs through the use of internal and external optical elements
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6335263B1 (en) 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
JP4489904B2 (en) 2000-04-14 2010-06-23 株式会社アルバック Vacuum processing apparatus and substrate holding method
US6558109B2 (en) * 2000-05-26 2003-05-06 Automation Technology, Inc. Method and apparatus for separating wafers
US6683368B1 (en) 2000-06-09 2004-01-27 National Semiconductor Corporation Lead frame design for chip scale package
JP4467720B2 (en) 2000-06-15 2010-05-26 株式会社アルバック Substrate transfer device
KR20020005152A (en) 2000-07-08 2002-01-17 구본준, 론 위라하디락사 Method of patterning Transpatent Conductive Film
JP3906653B2 (en) 2000-07-18 2007-04-18 ソニー株式会社 Image display device and manufacturing method thereof
DE10051159C2 (en) 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED module, e.g. White light source
JP2002134822A (en) 2000-10-24 2002-05-10 Sharp Corp Semiconductor light emitting device and method of manufacturing the same
JP4780828B2 (en) 2000-11-22 2011-09-28 三井化学株式会社 Adhesive tape for wafer processing, method for producing the same and method for using the same
JP2002164695A (en) 2000-11-29 2002-06-07 Mitsubishi Paper Mills Ltd Electrostatic attraction plate for transporting electronic material
US6555417B2 (en) 2000-12-05 2003-04-29 Analog Devices, Inc. Method and device for protecting micro electromechanical system structures during dicing of a wafer
JP4514321B2 (en) 2000-12-08 2010-07-28 パナソニック株式会社 Component mounting equipment
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
EP1358673A1 (en) * 2001-02-08 2003-11-05 International Business Machines Corporation Chip transfer method and apparatus
JP2002240943A (en) 2001-02-13 2002-08-28 Ricoh Co Ltd Electrostatic transporter, developer, image former, and classifier
DE10124328A1 (en) 2001-05-17 2002-11-21 Ersa Gmbh Device for unsoldering electronic component has heat source at distance from bearer's component side so solder joint heating to melting point takes place indirectly by heating component
JP4524953B2 (en) * 2001-05-18 2010-08-18 パナソニック株式会社 Method for manufacturing nitride semiconductor substrate and method for manufacturing nitride semiconductor device
JP3747807B2 (en) 2001-06-12 2006-02-22 ソニー株式会社 Device mounting substrate and defective device repair method
JP2004531894A (en) 2001-06-15 2004-10-14 クリー　インコーポレイテッド UV light emitting diode
US6787435B2 (en) 2001-07-05 2004-09-07 Gelcore Llc GaN LED with solderable backside metal
JP3989254B2 (en) 2002-01-25 2007-10-10 日本碍子株式会社 Dissimilar material joined body and manufacturing method thereof
US6793829B2 (en) 2002-02-27 2004-09-21 Honeywell International Inc. Bonding for a micro-electro-mechanical system (MEMS) and MEMS based devices
JP4214704B2 (en) 2002-03-20 2009-01-28 日亜化学工業株式会社 Semiconductor element
US7033842B2 (en) 2002-03-25 2006-04-25 Matsushita Electric Industrial Co., Ltd. Electronic component mounting apparatus and electronic component mounting method
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP3843884B2 (en) * 2002-04-23 2006-11-08 住友電気工業株式会社 Bipolar transistor manufacturing method
JP4281044B2 (en) 2002-06-18 2009-06-17 財団法人名古屋産業科学研究所 Micropart placement method
JP4338376B2 (en) * 2002-10-24 2009-10-07 キヤノンアネルバ株式会社 Electrostatic chuck device
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
TWI249148B (en) 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
JP4147073B2 (en) 2002-09-02 2008-09-10 シャープ株式会社 Manufacturing method of light emitting diode
JP3873854B2 (en) 2002-09-19 2007-01-31 株式会社デンソー Manufacturing method of semiconductor device
DE10245631B4 (en) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung semiconductor device
US7180099B2 (en) 2002-11-11 2007-02-20 Oki Data Corporation Semiconductor apparatus with thin semiconductor film
WO2004047057A1 (en) 2002-11-19 2004-06-03 Ishikawa Seisakusho,Ltd. Pixel control element selection transfer method, pixel control element mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate
JP4766831B2 (en) 2002-11-26 2011-09-07 株式会社村田製作所 Manufacturing method of electronic parts
GB0229191D0 (en) 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
US20060226419A1 (en) 2003-01-21 2006-10-12 Jan Birnstock Encapsulation for an organic electronics component and production method therefor
US6786390B2 (en) 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
JP4334892B2 (en) 2003-03-20 2009-09-30 パナソニック株式会社 Component mounting method
DE60334745D1 (en) 2003-08-08 2010-12-09 Kang Sang Kyu NITRID MICROSPHERIC EMISSION DIODE WITH GREAT BRIGHTNESS AND METHOD OF MANUFACTURING THEREOF
JP4580633B2 (en) 2003-11-14 2010-11-17 スタンレー電気株式会社 Semiconductor device and manufacturing method thereof
KR20050082487A (en) 2004-02-19 2005-08-24 삼성전자주식회사 Surface light source device and display device having the same
JP4236259B2 (en) 2004-03-08 2009-03-11 キヤノン株式会社 Recording device
JP4868709B2 (en) 2004-03-09 2012-02-01 三洋電機株式会社 Light emitting element
WO2005099310A2 (en) 2004-03-29 2005-10-20 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
JP3994980B2 (en) 2004-03-29 2007-10-24 株式会社日立製作所 Device mounting substrate, manufacturing method thereof, and semiconductor device mounting method
EP1737600B1 (en) 2004-03-31 2008-08-27 Applied Materials, Inc. Method and apparatus for transferring conductive pieces during semiconductor device fabrication
US7462861B2 (en) 2004-04-28 2008-12-09 Cree, Inc. LED bonding structures and methods of fabricating LED bonding structures
JP4632690B2 (en) 2004-05-11 2011-02-16 スタンレー電気株式会社 Semiconductor light emitting device and manufacturing method thereof
KR101746412B1 (en) 2004-06-04 2017-06-14 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Methods and devices for fabricating and assembling printable semiconductor elements
JP4830275B2 (en) 2004-07-22 2011-12-07 ソニー株式会社 Memory element
KR100630698B1 (en) 2004-08-17 2006-10-02 삼성전자주식회사 Semiconductor package improving a solder joint reliability and method for manufacturing the same
JP3904571B2 (en) 2004-09-02 2007-04-11 ローム株式会社 Semiconductor light emitting device
US7187078B2 (en) 2004-09-13 2007-03-06 Taiwan Semiconductor Manufacturing Co. Ltd. Bump structure
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7563625B2 (en) 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
US7378288B2 (en) 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7195944B2 (en) 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
JP4848638B2 (en) 2005-01-13 2011-12-28 ソニー株式会社 Method for forming semiconductor device and method for mounting semiconductor device
JP2006196692A (en) 2005-01-13 2006-07-27 Sony Corp Method for manufacturing semiconductor device
KR100707955B1 (en) 2005-02-07 2007-04-16 (주) 비앤피 사이언스 Light emitting diode and manufacturing method for the same
DE102005009060A1 (en) 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh Module with radiation-emitting semiconductor bodies
US7205652B2 (en) 2005-03-23 2007-04-17 Delphi Technologies, Inc Electronic assembly including multiple substrates
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
JP4950557B2 (en) 2005-05-31 2012-06-13 三洋電機株式会社 Semiconductor light emitting device
TWI258221B (en) * 2005-06-28 2006-07-11 Ind Tech Res Inst A thin film transistor (TFT) for driving organic light emitting diodes and manufacturing method thereof
US7498240B2 (en) 2005-08-31 2009-03-03 Micron Technology, Inc. Microfeature workpieces, carriers, and associated methods
KR20070042214A (en) 2005-10-18 2007-04-23 김성진 Nitride-based light emitting diode and manufacturing of the same
KR100755874B1 (en) * 2005-11-30 2007-09-05 주식회사 아이피에스 Electrostatic chuck for vacuum processing apparatus, processing apparatus having same and method for manufacturing same
JP4564927B2 (en) * 2006-02-09 2010-10-20 太平洋セメント株式会社 Bipolar electrostatic chuck
US7737451B2 (en) 2006-02-23 2010-06-15 Cree, Inc. High efficiency LED with tunnel junction layer
KR100778820B1 (en) 2006-04-25 2007-11-22 포항공과대학교 산학협력단 METHOD FOR FORMING METAL ELECTRODE AND MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
US7910945B2 (en) 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
TWI345494B (en) * 2006-07-07 2011-07-21 Hon Hai Prec Ind Co Ltd Clamping apparatus for washing optical elements
JP5126875B2 (en) 2006-08-11 2013-01-23 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting device
JP2008053685A (en) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd Vertical-structure gallium nitride light-emitting diode element, and its manufacturing method
JP4535053B2 (en) 2006-10-12 2010-09-01 ソニー株式会社 LIGHT EMITTING DIODE WIRING FORMING METHOD, LIGHT EMITTING DIODE MOUNTING BOARD, DISPLAY, BACKLIGHT, LIGHTING DEVICE, AND ELECTRONIC DEVICE
JP4890421B2 (en) 2006-10-31 2012-03-07 太平洋セメント株式会社 Electrostatic chuck
JP4835409B2 (en) 2006-11-30 2011-12-14 豊田合成株式会社 III-V group semiconductor device and manufacturing method thereof
US7795054B2 (en) 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
KR20090096704A (en) 2006-12-22 2009-09-14 큐나노 에이비 Led with upstanding nanowire structure and method of producing such
JP4980709B2 (en) 2006-12-25 2012-07-18 ローム株式会社 Semiconductor device
KR101610885B1 (en) 2007-01-17 2016-04-08 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Optical systems fabricated by printing-based assembly
JP2008186959A (en) 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Group iii-v semiconductor device and manufacturing method thereof
US8188497B2 (en) 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
TW200834962A (en) 2007-02-08 2008-08-16 Touch Micro System Tech LED array package structure having Si-substrate and method of making the same
JP2008200821A (en) 2007-02-21 2008-09-04 Denso Corp Method for manufacturing honeycomb object molding die
FR2913145B1 (en) 2007-02-22 2009-05-15 Stmicroelectronics Crolles Sas ASSEMBLY OF TWO PARTS OF INTEGRATED ELECTRONIC CIRCUIT
JP4290745B2 (en) 2007-03-16 2009-07-08 豊田合成株式会社 Method for manufacturing group III-V semiconductor device
US7732301B1 (en) 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
JP4341693B2 (en) 2007-05-16 2009-10-07 ウシオ電機株式会社 LED element and manufacturing method thereof
WO2008141359A1 (en) 2007-05-20 2008-11-27 Silverbrook Research Pty Ltd Method of removing mems devices from a handle substrate
US8029164B2 (en) 2007-05-21 2011-10-04 Goldeneye, Inc. LED light recycling cavity with integrated optics
WO2009004980A1 (en) 2007-06-29 2009-01-08 Showa Denko K.K. Method for manufacturing light emitting diode
US8030757B2 (en) 2007-06-29 2011-10-04 Intel Corporation Forming a semiconductor package including a thermal interface material
US7838410B2 (en) 2007-07-11 2010-11-23 Sony Corporation Method of electrically connecting element to wiring, method of producing light-emitting element assembly, and light-emitting element assembly
US20090278233A1 (en) 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
JP4844506B2 (en) 2007-08-28 2011-12-28 パナソニック電工株式会社 Light emitting device
US20090072382A1 (en) 2007-09-18 2009-03-19 Guzek John S Microelectronic package and method of forming same
JP4809308B2 (en) 2007-09-21 2011-11-09 新光電気工業株式会社 Substrate manufacturing method
US8558379B2 (en) 2007-09-28 2013-10-15 Tessera, Inc. Flip chip interconnection with double post
WO2009048799A1 (en) 2007-10-11 2009-04-16 Jie Yao Photo-detector array and semiconductor image intensifier
KR101619010B1 (en) 2007-11-21 2016-05-09 오디오 픽셀즈 리미티드 Digital speaker apparatus
KR101438811B1 (en) 2008-01-03 2014-09-05 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR101475520B1 (en) 2008-01-14 2014-12-23 삼성전자주식회사 Quantum dot ink composition for inkjet printing and electronic device using the same
JP2009182076A (en) 2008-01-30 2009-08-13 Panasonic Corp Semiconductor device and fabrication method for the same
JP5288852B2 (en) 2008-03-21 2013-09-11 スタンレー電気株式会社 Manufacturing method of semiconductor device
CN101919074B (en) 2008-03-26 2011-11-16 晶能光电（江西）有限公司 Method for fabricating robust light-emitting diodes
JP4479827B2 (en) 2008-05-12 2010-06-09 ソニー株式会社 Light emitting diode display device and manufacturing method thereof
DE102008050538B4 (en) 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic component and method for its production
CN101603636B (en) 2008-06-10 2012-05-23 展晶科技(深圳)有限公司 Light source device
US7927976B2 (en) 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
KR101332794B1 (en) 2008-08-05 2013-11-25 삼성전자주식회사 Light emitting device, light emitting system comprising the same, and fabricating method of the light emitting device and the light emitting system
US7999454B2 (en) 2008-08-14 2011-08-16 Global Oled Technology Llc OLED device with embedded chip driving
WO2010021267A1 (en) 2008-08-21 2010-02-25 株式会社村田製作所 Electronic component and method for manufacturing the same
JP5522045B2 (en) 2008-08-21 2014-06-18 株式会社村田製作所 Electronic component device and manufacturing method thereof
WO2010020077A1 (en) 2008-08-22 2010-02-25 Lattice Power (Jiangxi) Corporation Method for fabricating ingaain light-emitting device on a combined substrate
JP2010056458A (en) 2008-08-29 2010-03-11 Kyocera Corp Method of manufacturing light emitting element
JP5123269B2 (en) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド Light emitting device and manufacturing method thereof
TWI467691B (en) 2008-10-15 2015-01-01 Creative Tech Corp Electrostatic chuck and its manufacturing method
US7854365B2 (en) 2008-10-27 2010-12-21 Asm Assembly Automation Ltd Direct die attach utilizing heated bond head
WO2010059781A1 (en) 2008-11-19 2010-05-27 Semprius, Inc. Printing semiconductor elements by shear-assisted elastomeric stamp transfer
JP4888473B2 (en) 2008-11-20 2012-02-29 ソニー株式会社 Mounting board
JP5359734B2 (en) 2008-11-20 2013-12-04 豊田合成株式会社 Light emitting device and manufacturing method thereof
JP5225041B2 (en) 2008-11-21 2013-07-03 京セラ株式会社 Electrostatic chuck
CN102308378A (en) 2008-11-25 2012-01-04 M丘比德技术公司 Electrostatic chuck
JP2010161212A (en) 2009-01-08 2010-07-22 Hitachi Cable Ltd Method of manufacturing wafer for semiconductor light-emitting element
KR101809472B1 (en) 2009-01-14 2018-01-18 삼성전자주식회사 Light emitting device for improving light extraction efficiency
JP5293211B2 (en) 2009-01-14 2013-09-18 Ｔｏｔｏ株式会社 Electrostatic chuck and method of manufacturing electrostatic chuck
KR101001454B1 (en) 2009-01-23 2010-12-14 삼성모바일디스플레이주식회사 Electrostatic Chuck and Manufacturing Device of Organic Light Emitting Diode Having the Same
JP2010186829A (en) 2009-02-10 2010-08-26 Toshiba Corp Method for manufacturing light emitting element
KR100974776B1 (en) 2009-02-10 2010-08-06 엘지이노텍 주식회사 Light emitting device
JP2010199204A (en) 2009-02-24 2010-09-09 Sony Corp Light-emitting device and method of manufacturing the same
JP5146356B2 (en) 2009-02-24 2013-02-20 豊田合成株式会社 Light emitting device and manufacturing method thereof
JP5470601B2 (en) 2009-03-02 2014-04-16 新光電気工業株式会社 Electrostatic chuck
US8877648B2 (en) 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
US8937327B2 (en) 2009-03-31 2015-01-20 Seoul Semiconductor Co., Ltd. Light emitting device having plurality of light emitting cells and method of fabricating the same
TWI485879B (en) 2009-04-09 2015-05-21 Lextar Electronics Corp Light emitting diode chip and manufacturing method thereof
US8153589B2 (en) 2009-04-27 2012-04-10 The University Of North Carolina At Chapel Hill JNK3 as a target for the treatment of angiogenesis-related diseases
US8232566B2 (en) 2009-05-04 2012-07-31 Lg Innotek Co., Ltd. Light emitting device, package, and system
TWI573185B (en) 2009-05-12 2017-03-01 美國伊利諾大學理事會 Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US7989266B2 (en) 2009-06-18 2011-08-02 Aptina Imaging Corporation Methods for separating individual semiconductor devices from a carrier
US8173456B2 (en) 2009-07-05 2012-05-08 Industrial Technology Research Institute Method of manufacturing a light emitting diode element
DE102009033686A1 (en) 2009-07-17 2011-01-20 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an inorganic optoelectronic semiconductor component
JP5301418B2 (en) 2009-12-02 2013-09-25 スタンレー電気株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
KR100973928B1 (en) 2009-12-10 2010-08-03 (주)옵토니카 Process for led die bonding
US9209059B2 (en) 2009-12-17 2015-12-08 Cooledge Lighting, Inc. Method and eletrostatic transfer stamp for transferring semiconductor dice using electrostatic transfer printing techniques
US8334152B2 (en) 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
DE102009058796A1 (en) 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelectronic component and method for producing an optoelectronic component
TWI467798B (en) 2009-12-28 2015-01-01 Hon Hai Prec Ind Co Ltd Method for making light emitting diode chip
JP4996706B2 (en) 2010-03-03 2012-08-08 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
CN101807649B (en) 2010-03-19 2013-01-23 厦门市三安光电科技有限公司 High-brightness AlGaInP-based light-emitting diode with introduced roughened layer and manufacturing method thereof
WO2011123285A1 (en) 2010-03-29 2011-10-06 Semprius, Inc. Selective transfer of active components
US9161448B2 (en) * 2010-03-29 2015-10-13 Semprius, Inc. Laser assisted transfer welding process
KR20110123118A (en) 2010-05-06 2011-11-14 삼성전자주식회사 Vertical light emitting device having patterned emitting portion
KR101028277B1 (en) 2010-05-25 2011-04-11 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting unit
CN101872824A (en) 2010-06-07 2010-10-27 厦门市三安光电科技有限公司 Gallium nitride-based inverted light-emitting diode (LED) with two reflecting layers on lateral surfaces and preparation method thereof
US8381965B2 (en) 2010-07-22 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compress bonding
JP5700504B2 (en) 2010-08-05 2015-04-15 株式会社デンソー Semiconductor device bonding materials
JP2010263251A (en) 2010-08-25 2010-11-18 Sanyo Electric Co Ltd Light-emitting device and method of manufacturing the same
US8563334B2 (en) 2010-09-14 2013-10-22 Tsmc Solid State Lighting Ltd. Method to remove sapphire substrate
JP4778107B1 (en) 2010-10-19 2011-09-21 有限会社ナプラ Light emitting device and manufacturing method thereof
JP5740939B2 (en) 2010-11-29 2015-07-01 住友電気工業株式会社 Manufacturing method of semiconductor device
US8934259B2 (en) 2011-06-08 2015-01-13 Semprius, Inc. Substrates with transferable chiplets
GB201112376D0 (en) 2011-07-19 2011-08-31 Rolls Royce Plc Boding of metal components
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
JP5881992B2 (en) 2011-08-09 2016-03-09 太陽誘電株式会社 Multilayer inductor and manufacturing method thereof
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8333860B1 (en) 2011-11-18 2012-12-18 LuxVue Technology Corporation Method of transferring a micro device
US8518204B2 (en) 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8426227B1 (en) 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
JP5961377B2 (en) 2011-12-21 2016-08-02 スタンレー電気株式会社 Semiconductor light emitting device

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