TWI690102B - 發光裝置及其製造方法 - Google Patents
發光裝置及其製造方法 Download PDFInfo
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- TWI690102B TWI690102B TW108100342A TW108100342A TWI690102B TW I690102 B TWI690102 B TW I690102B TW 108100342 A TW108100342 A TW 108100342A TW 108100342 A TW108100342 A TW 108100342A TW I690102 B TWI690102 B TW I690102B
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- light
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- pads
- emitting diode
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Abstract
一種發光裝置,包括基底、設置於基底上的多個接墊、犧牲圖案層及設置於犧牲圖案層上的發光二極體元件。發光二極體元件包括第一型半導體層、第二型半導體層、主動層、多個電極以及分別設置於多個電極上的多個連接圖案。多個連接圖案的材料包括可熱流動的導電材料。多個連接圖案覆蓋犧牲圖案層的側壁且電性連接至多個接墊。此外,上述發光裝置的製造方法也被提出。
Description
本發明是有關於一種電子裝置及其製造方法,且特別是有關於一種發光裝置及其製造方法。
轉置微元件技術已使用在新興電子裝置的製程中。以發光裝置的製程為例,其包括下列步驟:提供具有多個轉置凸塊的彈性轉置頭;提供多個發光二極體元件,令彈性轉置頭的轉置凸塊與發光二極體元件接觸,進而提取所欲的發光二極體元件;利用彈性轉置頭將發光二極體元件轉置到接收基板的接合層上;在載有多個發光二極體元件的接收基板上製作互連層,以使發光二極體元件與接收基板的接墊電性連接。然而,多個發光二極體元件、接收基板的接墊及互連層之間需精準對位,方能使發光二極體元件與接收基板的接墊電性連接,造成發光裝置的製造良率獨不易提升。
本發明提供一種發光裝置及其製造方法,製造良率高。
本發明的一種發光裝置,包括基底、多個接墊、犧牲圖案層及發光二極體元件。多個接墊設置於基底上。犧牲圖案層設置於基底上。發光二極體元件設置於犧牲圖案層上。發光二極體元件包括第一型半導體層、相對於第一型半導體層的第二型半導體層、位於第一型半導體層與第二型半導體層之間的主動層、分別與第一型半導體層及第二型半導體層電性連接的多個電極以及分別設置於多個電極上的多個連接圖案。多個連接圖案的材料包括可熱流動的導電材料,而多個連接圖案覆蓋犧牲圖案層的側壁且電性連接至多個接墊。
本發明的一種發光裝置,包括下列步驟:提供基底及設置於基底上的多個接墊;形成犧牲材料層於基底上,以覆蓋多個接墊;設置發光二極體元件於犧牲材料層上,其中發光二極體元件包括第一型半導體層、第二型半導體層、位於第一型半導體層與第二型半導體層之間的主動層、分別與第一型半導體層及第二型半導體層電性連接的多個電極以及分別設置於多個電極上的多個連接圖案,且多個連接圖案的材料包括可熱流動導電材料。圖案化犧牲材料層,以形成犧牲圖案層,且使發光二極體元件之多個連接圖案與多個接墊之間形成多個間隙,其中犧牲圖案層暴露多個接墊之每一個的至少一部分;以及進行加熱工序,以使多個連接圖案流動,而分別與多個接墊電性連接。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦合」係可為二元件間存在其它元件。
本文使用的「約」、「近似」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的「約」、「近似」或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。
本文參考作為理想化實施方式的示意圖的截面圖來描述示例性實施方式。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施方式不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。
現將詳細地參考本發明的示範性實施例,示範性實施例的實例說明於所附圖式中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。
圖1A至圖1C為本發明第一實施例之發光裝置的製造流程剖面示意圖。
請參照圖1A,首先,提供主動元件基板A。主動元件基板A包括基底110以及設置於基底110上的多個接墊130a、130b。在本實施例中,接墊130a、130b的材料例如為金屬,但本發明不以此為限。在本實施例中,主動元件基板A還包括驅動線路層120,與接墊130a、130b電性連接。舉例而言,驅動線路層120可包括資料線(未繪示)、掃描線(未繪示)、電源線(未繪示)、共通線(未繪示)、第一電晶體(未繪示)及第二電晶體(未繪示),第一電晶體具有第一端、第二端與控制端,第二電晶體也具有第一端、第二端與控制端,第一電晶體的第一端電性連接至資料線,第一電晶體的控制端電性連接至掃描線,第一電晶體的第二端電性連接至第二電晶體的控制端,第二電晶體的第一端電性連接至電源線,第二電晶體的第二端電性連接至接墊130a、130b的一者,而接墊130a、130b的另一者電性連接至共通線。然而,本發明不限於此,在其它實施例中,驅動線路層120也可以是其它樣態。
請參照圖1A,接著,形成犧牲材料層140於基底110上,以覆蓋多個接墊130a、130b。犧牲材料層140也可稱接合層(bonding layer)。舉例而言,在本實施例中,犧牲材料層140的材質可以是光阻、熱固化膠或其它適當材料。
請參照圖1A,接著,設置發光二極體元件150於犧牲材料層140上。發光二極體元件150藉由犧牲材料層140接合於主動元件基板A上。發光二極體元件150包括第一型半導體層152a、第二型半導體層152b、位於第一型半導體層152a與第二型半導體層152b之間的主動層154以及分別與第一型半導體層152a及第二型半導體層152b電性連接的多個電極156a、156b。
在本實施例中,多個電極156a、156b位於第一型半導體層152a的同一側。也就是說,發光二極體元件150為水平式發光二極體。此外,發光二極體元件150還包括絕緣層151,設置於第一型半導體層152a與第二型半導體層152b上,且具有分別與第一型半導體層152a與第二型半導體層152b重疊的多個開口151a、151b,其中多個電極156a、156b分別透多個開口151a、151b與第一型半導體層152a及第二型半導體層152b電性連接。
值得注意的是,發光二極體元件150還包括多個連接圖案158a、158b,且多個連接圖案158a、158b的材料包括可熱流動導電材料。可熱流動導電材料受熱後能流動。主動元件基板A及犧牲材料層140的耐溫性高於可熱流動導電材料的耐溫性。舉例而言,在本實施例中,可熱流動導電材料的材料可包括銦(In)、錫(Sn)、其它適當材料或其組合,但本發明不以此為限。
發光二極體元件150的多個連接圖案158a、158b分別設置於多個電極156a、156b上。舉例而言,在本實施例中,連接圖案158a、158b除了設置於電極156a、156b上,更設置於由第一型半導體層152a、第二型半導體層152b及主動層154構成之疊構的側壁上,但本發明不以此為限。
請參照圖1A及圖1B,接著,圖案化犧牲材料層140,以形成犧牲圖案層142,且使發光二極體元件150之多個連接圖案158a、158b與多個接墊130a、130b之間形成多個間隙g,其中犧牲圖案層142暴露多個接墊130a、130b之每一個的至少一部分。
舉例而言,在本實施例中,係以發光二極體元件150為遮罩,對犧牲材料層140進行過蝕刻製程,以形成犧牲圖案層142。犧牲圖案層142的側壁142a、連接圖案158a、158b及多個接墊130a、130b之間具有多個間隙g。在本實施例中,犧牲圖案層142於基底110上的垂直投影可位於發光二極體元件150於基底110上的垂直投影以內,且犧牲圖案層142於基底110上之垂直投影的面積可小於發光二極體元件150於基底110上之垂直投影的面積,但本發明不以此為限。
請參照圖1B及圖1C,接著,進行加熱工序,以使多個連接圖案158a、158b變成可流動的,可流動的連接圖案158a、158b受到重力的作用向下流動,而分別與多個接墊130a、130b電性連接。上述加熱工序可以是局部加熱(local heating)或整體加熱(global heating),端視實際需求而定。舉例而言,可使用雷射熔接(laser welding)進行局部加熱;利用加熱爐(Oven)或加熱板(hot plate)進行整體加熱;但本發明不以此為限。於此,便完成本實施例的發光裝置100。在本實施例中,發光裝置100例如是顯示裝置。然而,本發明不限於此,在其它實施例中,發光裝置100也可以是提供照明光束的電子裝置,例如但不限於:背光源。
值得一提的是,在本實施例中,係以發光二極體元件150本身為遮罩,圖案化位於發光二極體元件150下的犧牲材料層140,以形成犧牲圖案層142;然後,再使發光二極體元件150本身的連接圖案158a、158b分別流動至主動元件基板A的接墊130a、130b上,以使發光二極體元件150與主動元件基板A電性連接。藉此,能降低被巨量轉移的多個發光二極體元件150與主動元件基板A的多個接墊130a、130b之間的對位精度要求,進而提升發光裝置100的製造良率。
請參照圖1C,發光裝置100包括基底110、多個接墊130a、130b、犧牲圖案層142以及發光二極體元件150。多個接墊130a、130b設置於基底110上。犧牲圖案層142至少設置於多個接墊130a、130b之間的區域R,且具有側壁142a。發光二極體元件150設置於犧牲圖案層142上。犧牲圖案層142位於發光二極體元件150的第一型半導體層152a與基底110之間。連接圖案158a、158b覆蓋犧牲圖案層142的側壁142a,且電性連接至多個接墊130a、130b。在本實施例中,連接圖案158a、158b可接觸於犧牲圖案層142的側壁142a及多個接墊130a、130b的表面130a1、130b1,但本發明不以此為限。
在本實施例中,發光二極體元件150的主動層154可設置於發光二極體元件150的多個電極156a、156b和犧牲圖案層142之間。也就是說,在本實施例中,發光二極體元件150的多個電極156a、156b可以選擇性地朝上。然而,本發明不限於此,根據其它實施例,發光二極體元件150的多個電極156a、156b可朝下,以下配合其它圖2A至圖2C舉例說明之。
圖2A至圖2C為本發明第二實施例之發光裝置的製造流程剖面示意圖。第二實施例之發光裝置100A的製造流程與第一實施例之發光裝置100的製造流程類似,兩者的主要差異在於:發光二極體元件150設置於主動元件基板A上的方式不同,以下配合圖2A至圖2C具體說明之。
請參照圖2A,首先,提供主動元件基板A。主動元件基板A包括基底110以及設置於基底110上的多個接墊130a、130b。在本實施例中,接墊130a的表面130a1與基底110的距離H1可選擇性地大於接墊130b的表面130b1與基底110的距離H2。也就是說,接墊130a的厚度D1可大於接墊130b的厚度D2。
請參照圖2A,接著,形成犧牲材料層140於基底110上,以覆蓋多個接墊130a、130b。然後,設置發光二極體元件150於犧牲材料層140上。透過具有不同厚度的接墊130a、130b可彌補發光二極體元件150之多個電極156a、156b的高低差。藉此,夾設於連接圖案158a與接墊130a之間的部分犧牲材料層140的厚度大致上可等於夾設於連接圖案158b與接墊130b之間的部分犧牲材料層140的厚度,以利後續圖案化犧牲材料層140。
請參照圖2A及圖2B,接著,圖案化犧牲材料層140,以形成犧牲圖案層142,且使發光二極體元件150之多個連接圖案158a、158b與多個接墊130a、130b之間形成多個間隙g,其中犧牲圖案層142暴露多個接墊130a、130b之每一個的至少一部分。如圖2A所示,在本實施例中,由於夾設於連接圖案158a與接墊130a之間的部分犧牲材料層140的厚度大致上等於夾設於連接圖案158b與接墊130b之間的部分犧牲材料層140的厚度,因此,以發光二極體元件150為遮罩對犧牲材料層140進行過蝕刻製程時,能容易地在連接圖案158a與接墊130a之間及連接圖案158b與接墊130b之間形成多個間隙g,而不易出現不良現象(例如但不限於:連接圖案158b與接墊130b之間已形成間隙g而連接圖案158a與接墊130a之間尚未形成間隙g的情形)。
請參照圖2B及圖2C,接著,進行加熱工序,以使多個連接圖案158a、158b變成可流動的,可流動的連接圖案158a、158b受到重力的作用向下流動,而分別與多個接墊130a、130b電性連接。於此,便完成本實施例的發光裝置100A。
請參照圖2C,本實施例的發光裝置100A與第一實施例的發光裝置100類似,兩者主要的差異在於:發光二極體元件150的電極156a、156b設置於發光二極體元件150的主動層154與犧牲圖案層142之間。也就是說,在本實施例中,發光二極體元件150的多個電極156a、156b可以選擇性地朝下。此外,在本實施例中,犧牲圖案層142除了接觸於連接圖案142外,還接觸於發光二極體元件150之位於多個電極156a、156b之間的絕緣層151。
圖3A至圖3C為本發明第三實施例之發光裝置的製造流程剖面示意圖。第三實施例之發光裝置100B的製造流程與第二實施例之發光裝置100A的製造流程類似,兩者的主要差異在於:第三實施例之彌補發光二極體元件150之多個電極156a、156b之高低差的方式與第二實施例之彌補發光二極體元件150之多個電極156a、156b之高低差的方式不同,以下配合圖3A至圖3C具體說明之。
請參照圖3A,首先,提供主動元件基板A。主動元件基板A包括基底110以及設置於基底110上的多個接墊130a、130b。與第二實施例不同的是,本實施例的主動元件基板A還包括輔助導電圖案170,設置於接墊130a上且與接墊130a電性連接。具體而言,主動元件基板A還包括第一介電層160,第一介電層160設置於多個接墊130a、130b上且具有第一接觸窗162,輔助導電圖案170設置於第一介電層160上且透過第一接觸窗162與接墊130a電性連接。此外,第一介電層160還具有第二接觸窗164,與接墊130b重疊。
請參照圖3A,接著,形成犧牲材料層140於基底110上,以覆蓋多個接墊130a、130b。在本實施例中,犧牲材料層140係設置於輔助導電圖案170以及第一介電層160上,而位於多個接墊130a、130b的上方。然後,設置發光二極體元件150於犧牲材料層140上。輔助導電圖案170的設置可彌補發光二極體元件150之多個電極156a、156b的高低差。也就是說,夾設於連接圖案158a與輔助導電圖案170之間的部分犧牲材料層140的厚度大致上可等於夾設於連接圖案158b與接墊130b之間的部分犧牲材料層140的厚度,以利後續圖案化犧牲材料層140。
請參照圖3A及圖3B,接著,圖案化犧牲材料層140,以形成犧牲圖案層142,且使發光二極體元件150之多個連接圖案158a、158b與輔助導電圖案170及接墊130b之間形成多個間隙g,其中犧牲圖案層142暴露輔助導電圖案170及接墊130b之每一個的至少一部分。如圖3A所示,在本實施例中,由於夾設於連接圖案158a與輔助導電圖案170之間的部分犧牲材料層140的厚度大致上等於夾設於連接圖案158b與接墊130b之間的部分犧牲材料層140的厚度,因此,以發光二極體元件150為遮罩對犧牲材料層140進行過蝕刻製程時,能容易地在連接圖案158a與接墊130a之間及連接圖案158b與接墊130b之間形成多個間隙g,不易出現不良現象(例如但不限於:連接圖案158b與接墊130b之間已形成間隙g而連接圖案158a與接墊130a之間尚未形成間隙g的情形)。
請參照圖3B及圖3C,接著,進行加熱工序,以使多個連接圖案158a、158b變成可流動的,可流動的連接圖案158a、158b受到重力的作用向下流動,而分別與輔助導電圖案170及接墊130b電性連接。在本實施例中,包括可熱流動導電材料的連接圖案158a係與輔助導電圖案170接觸,而輔助導電圖案170可視為一接墊。犧牲圖案層142至少設置於輔助導電圖案170與接墊130b之間的區域R。此外,在本實施例中,另一連接圖案158b係透過第一介電層160的第二接觸窗164與接墊130b電性連接。於此,便完成本實施例的發光裝置100B。
圖4A至圖4C為本發明第四實施例之發光裝置的製造流程剖面示意圖。第四實施例之發光裝置100C的製造流程與第三實施例之發光裝置100B的製造流程類似,兩者的主要差異在於:第四實施例之彌補發光二極體元件150之多個電極156a、156b之高低差的方式與第三實施例之彌補發光二極體元件150之多個電極156a、156b之高低差的方式不同,以下配合圖4A至圖4C說明之。
請參照圖4A,首先,提供主動元件基板A。主動元件基板A包括基底110以及設置於基底110上的多個接墊130a、130b。與第三實施例不同的是,本實施例的主動元件基板A不包括輔助導電圖案170。
請參照圖4A,接著,形成犧牲材料層140於基底110上,以覆蓋多個接墊130a、130b。然後,設置發光二極體元件150於犧牲材料層140上。與第三實施例不同的是,本實施例的發光二極體元件150與第三實施例的發光二極體元件150不同。具體而言,本實施例的發光二極體元件150還包括輔助電極159,設置於發光二極體元件150的其中一個電極156a上,且與所述電極156a電性連接。當發光二極體元件150設置於犧牲材料層140上時,輔助電極159之朝向主動元件基板A之接墊130a的表面159a與另一電極156b之朝向主動元件基板A之接墊130b的表面156b1大致上可共平面。連接圖案158a及連接圖案158b分別設置於輔助電極159的表面159a及電極156b的表面156b1上,且分別與輔助電極159及電極156b電性連接。由於連接圖案158a設置於用以彌補電極156a、156b之高低差的輔助電極159上,因此夾設於連接圖案158a與接墊130a之間的部分犧牲材料層140的厚度大致上可等於夾設於連接圖案158b與接墊130b之間的部分犧牲材料層140的厚度,以利後續圖案化犧牲材料層140。
請參照圖4A及圖4B,接著,圖案化犧牲材料層140,以形成犧牲圖案層142,且使發光二極體元件150之多個連接圖案158a、158b與多個接墊130a、130b之間形成多個間隙g,其中犧牲圖案層142暴露多個接墊130a、130b之每一個的至少一部分。如圖4A所示,在本實施例中,發光二極體元件150的輔助電極159彌補了電極156a與電極156b的高低差,而使夾設於連接圖案158a與接墊130a之間的部分犧牲材料層140的厚度大致上等於夾設於連接圖案158b與接墊130b之間的部分犧牲材料層140的厚度。因此,以發光二極體元件150為遮罩對犧牲材料層140進行過蝕刻製程時,能容易地在連接圖案158a與接墊130a之間及連接圖案158b與接墊130b之間形成多個間隙g,而不易出現不良現象(例如但不限於:連接圖案158b與接墊130b之間已形成間隙g而連接圖案158a與接墊130a之間尚未形成間隙g的情形)。
請參照圖4B及圖4C,接著,進行加熱工序,以使多個連接圖案158a、158b變成可流動的,可流動的連接圖案158a、158b受到重力的作用向下流動,而分別與多個接墊130a、130b電性連接。於此,便完成本實施例的發光裝置100C。
前述第一~四實施例繪出發光裝置100、100A~100C的一個畫素的製造流程為示例。本領域具有通常知識者應能暸解前述一個畫素的製造流程能用以同時製造多個畫素,以下配合圖5A至圖5C及圖6舉例說明之。
圖5A至圖5C為本發明第五實施例之發光裝置的製造流程剖面示意圖。圖6為本發明第五實施例之發光裝置的上視示意圖。圖5C對應圖6的剖線I-I’。圖6繪出圖5C的基底110及發光二極體元件150,而省略圖5C的其它構件。
請參照圖5A,首先,提供主動元件基板A。主動元件基板A包括基底110以及設置於基底110上的多個接墊組130,每一接墊組130包括前述多個接墊130a、130b。接著,形成犧牲材料層140於基底110上,以覆蓋多個接墊組130。然後,設置多個發光二極體元件150於犧牲材料層140上。多個發光二極體元件150藉由犧牲材料層140接合於主動元件基板A上。
請參照圖5A及圖5B,接著,圖案化犧牲材料層140,以形成犧牲圖案層142,且使多個發光二極體元件150之多個連接圖案158a、158b與多個接墊130a、130b之間形成多個間隙g,其中犧牲圖案層142暴露多個接墊130a、130b之每一個的至少一部分。
請參照圖5B、圖5C及圖6,接著,進行加熱工序,以使多個發光二極體元件150的多個連接圖案158a、158b變成可流動的,可流動的連接圖案158a、158b受到重力的作用向下流動,而分別與多個接墊130a、130b電性連接。於此,便完成本實施例的發光裝置100D。
前述第一~五實施例係說明利用包括可熱流動導電材料的連接圖案158a、158b直接地開始製作發光裝置100、100A~100D。然而,本發明不限於此,包括可熱流動導電材料之連接圖案158a、158b的發光二極體元件150也可用以修補已完成的發光裝置,以下配合圖7A至圖7F和圖8A至圖8F以及圖9A至圖9F和圖10A至圖10F舉例說明之。
圖7A至圖7F為本發明第六實施例之發光裝置的製造流程剖面示意圖。圖8A至圖8F為本發明第六實施例之發光裝置的製造流程上視示意圖。圖8A至圖8F分別對應圖7A至圖7F的剖線Ι-Ι’、II-II’。 圖8A至圖8F繪示7A至圖7F的發光二極體元件150、互連圖案182、184及基底110,而省略圖7A至圖7F的其它構件。
請參照圖7A及圖8A,圖7A及圖8A示出利用一般方法製成的發光裝置。具體而言,利用一般方法已完成的發光裝置包括主動元件基板A、多個發光二極體元件150-1、150-2以及多個互連圖案182、184。
請參照圖7A及圖8A,利用一般方法已完成發光裝置後,接著,檢測發光裝置,而發現發光二極體元件150-2異常及/或與主動元件基板A之間的電性連接不良。請參照圖7A、圖7B、圖8A及圖8B,接著,移除發光二極體元件150-2。移除發光二極體元件150-2時,設置於發光二極體元件150-2上之互連圖案182的一部分及設置於發光二極體元件150-2上之互連圖案184的一部分會隨發光二極體元件150-2被移除,而設置在第二介電層190上之互連圖案182的另一部分及設置在第二介電層190上之互連圖案184的另一部分會被留在基底110上,如圖7B及圖8B所示。
請參照圖7C及圖8C,接著,形成犧牲材料層140於基
底110上,以覆蓋多個接墊130a、130b。在本實施例中,犧牲材料層140係形成於與原本之發光二極體元件150-2重疊的部分第二介電層190和位於發光二極體元件150-2兩側的部分互連圖案182及部分互連圖案184。
請參照圖7D及圖8D,接著,設置發光二極體元件150-3於犧牲材料層140上。發光二極體元件150-3藉由犧牲材料層140接合於主動元件基板A上。發光二極體元件150-3也包括前述的多個連接圖案158a、158b。
請參照圖7D、圖7E、圖8D及圖8E,接著,圖案化犧牲材料層140,以形成犧牲圖案層142,且使發光二極體元件150之多個連接圖案158a、158b與部分互連圖案182、184之間形成多個間隙g,其中犧牲圖案層142暴露部分互連圖案182、184之每一個的至少一部分。舉例而言,在本實施例中,以發光二極體元件150-3為遮罩,對犧牲材料層140進行過蝕刻製程,以形成犧牲圖案層142。對犧牲材料層140進行過蝕刻製程時,犧牲圖案層142的側壁142a及互連圖案182、184之間具有多個間隙g。
請參照圖7F及圖8F,接著,進行加熱工序,以使多個連接圖案158a、158b變成可流動的,可流動的連接圖案158a、158b受到重力的作用向下流動,而分別與殘留在基底110上的互連圖案182、184電性連接。在本實施例中,發光二極體元件150-3的連接圖案158a、158b會與互連圖案182、184接觸且電性連接。互連圖案182、184也可視為接墊。犧牲圖案層142至少設置於互連圖案182與互連圖案184之間的區域R。發光二極體元件150-3的連接圖案158a、158b係透過互連圖案182、184與接墊130a、130b電性連接。於此,便完成修補後的發光裝置100E。
需說明的是,在本實施例中,發光二極體元件150-1的電極156b與修補用的發光二極體元件150-3的電極156b係彼此電性連接。也就是說,正常的發光二極體元件150-1與用以修補的發光二極體元件150-3係屬於同一個畫素。然而,本發明不限於此,根據其它實施例,正常的發光二極體元件150-1的電極156b與用以修補之發光二極體元件150-3的電極156b也彼此電性獨立;也就是說,正常的發光二極體元件150-1與用以修補的發光二極體元件150-3也可分別屬於不同的畫素。
如圖7F及圖8F所示,在本實施例中,用以取代原本之發光二極體元件150-2的發光二極體元件150-3係設置在原本發光二極體元件150-2所設置的位置上。也就是說,在本實施例中,新的發光二極體元件150-3係與接墊130a、130b重疊。然而,本發明不限於此,在其它實施例中,用以取代原本之發光二極體元件150-2的發光二極體元件150-3也可不設置在原本發光二極體元件150-2所設置的位置上,以下配合圖9A至圖9F和圖10A至圖10F舉例說明之。
圖9A至圖9F為本發明第七實施例之發光裝置的製造流程剖面示意圖。圖10A至圖10F為本發明第七實施例之發光裝置的製造流程上視示意圖。圖9A至圖9F分別對應圖10A至圖10F的剖線Ι-Ι’、II-II’。圖10A至圖10F繪示9A至圖9F的發光二極體元件150、互連圖案182、184及基底110,而省略圖9A至圖9F的其它構件。
請參照圖9A及圖10A,首先,提供主動元件基板A。主動元件基板A包括基底110、設置於基底110上的驅動線路層120、與驅動線路層120電性連接的多個接墊130a、130b以及設置於多個接墊130a、130b上的第二介電層190。第二介電層190具有接觸窗192、194,分別重疊於多個接墊130a、130b。發光二極體元件150-1設置於第二介電層190上。多個互連圖案182、184分別設置於發光二極體元件150-1的多個電極156a、156b上,且透過第二介電層190的接觸窗192、194分別與多個接墊130a、130b電性連接。特別是,在本實施例中,互連圖案182、184具有延伸至接墊130a、130b外而不與接墊130a、130b重疊的一部分182a、184a。
請參照圖9A及圖10A,利用一般方法製成發光裝置後,接著,檢測發光裝置,而發現發光二極體元件150-1異常及/或與主動元件基板A之間的電性連接不良。請參照圖9A、圖9B、圖10A及圖10B,接著,移除發光二極體元件150-1。
請參照圖9C及圖10C,接著,形成犧牲材料層140於基底110上,以覆蓋互連圖案182之未與接墊130a、130b重疊的一部分182a及互連圖案184之未與接墊130b重疊的一部分184a。
請參照圖7D及圖8D,接著,設置發光二極體元件150-3於犧牲材料層140上。發光二極體元件150-3藉由犧牲材料層140接合於主動元件基板A上。發光二極體元件150-3也包括前述的多個連接圖案158a、158b。
請參照圖9D、圖9E、圖9D及圖9E,接著,圖案化犧牲材料層140,以形成犧牲圖案層142,且使發光二極體元件150之多個連接圖案158a、158b與部分互連圖案182a、184a之間形成多個間隙g,其中犧牲圖案層142暴露部分互連圖案182a、184a之每一個的至少一部分。
請參照圖9F及圖10F,接著,進行加熱工序,以使多個連接圖案158a、158b變成可流動的,可流動的連接圖案158a、158b受到重力的作用向下流動,而分別與未和接墊130a、130b重疊的部分182a互連圖案182及未與接墊130b重疊的部分184a互連圖案184電性連接。在本實施例中,發光二極體元件150-3的連接圖案158a、158b會與互連圖案182的一部分182a及互連圖案184的一部分184a接觸且電性連接。互連圖案182的一部分182a及互連圖案184的一部分184a也可視為接墊。犧牲圖案層142至少設置於互連圖案182的部分182a與互連圖案184的部分184a之間的區域R。發光二極體元件150-3的連接圖案158a、158b係透過互連圖案182、184與接墊130a、130b電性連接。於此,便完成修補後的發光裝置100F。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100、100~100F:發光裝置
110:基底
120:驅動線路層
130:接墊組
130a、130b:接墊
130a1、130b1、156b1、159a:表面
140:犧牲材料層
142:犧牲圖案層
142a:側壁
150、150-1、150-2、150-3:發光二極體元件
151:絕緣層
151a、151b:開口
152a:第一型半導體層
152b:第二型半導體層
154:主動層
156a、156b:電極
158a、158b:連接圖案
159:輔助電極
160:第一介電層
162、164、192、194:接觸窗
170:輔助導電圖案
182、184:互連圖案
182a、184a:部分
190:第二介電層
A:主動元件基板
D1、D2:厚度
g:間隙
H1、H2:距離
R:區域
Ι-Ι’、II-II’:剖線
圖1A至圖1C為本發明第一實施例之發光裝置的製造流程剖面示意圖。
圖2A至圖2C為本發明第二實施例之發光裝置的製造流程剖面示意圖。
圖3A至圖3C為本發明第三實施例之發光裝置的製造流程剖面示意圖。
圖4A至圖4C為本發明第四實施例之發光裝置的製造流程剖面示意圖。
圖5A至圖5C為本發明第五實施例之發光裝置的製造流程剖面示意圖。
圖6為本發明第五實施例之發光裝置的上視示意圖。
圖7A至圖7F為本發明第六實施例之發光裝置的製造流程剖面示意圖。
圖8A至圖8F為本發明第六實施例之發光裝置的製造流程上視示意圖。
圖9A至圖9F為本發明第七實施例之發光裝置的製造流程剖面示意圖。
圖10A至圖10F為本發明第七實施例之發光裝置的製造流程上視示意圖。
100:發光裝置
110:基底
120:驅動線路層
130a、130b:接墊
130a1、130b1:表面
142:犧牲圖案層
142a:側壁
150:發光二極體元件
151:絕緣層
151a、151b:開口
152a:第一型半導體層
152b:第二型半導體層
154:主動層
156a、156b:電極
158a、158b:連接圖案
A:主動元件基板
R:區域
Claims (13)
- 一種發光裝置,包括:一基底;多個接墊,設置於該基底上;一犧牲圖案層,設置於該基底上,且具有一側壁;以及一發光二極體元件,設置於該犧牲圖案層上,其中該發光二極體元件包括:一第一型半導體層;一第二型半導體層,相對於該第一型半導體層;一主動層,位於該第一型半導體層與該第二型半導體層之間;多個電極,分別與該第一型半導體層及該第二型半導體層電性連接;以及多個連接圖案,分別設置於該些電極上,其中該些連接圖案的材料包括一可熱流動的導電材料,而該些連接圖案覆蓋該犧牲圖案層的該側壁且電性連接至該些接墊,且該犧牲圖案層只位於該些連接圖案之間。
- 如申請專利範圍第1項所述的發光裝置,其中該發光二極體元件的該主動層設置於該發光二極體元件的該些電極和該犧牲圖案層之間。
- 如申請專利範圍第1項所述的發光裝置,其中該發光二極體元件的該些電極設置於該發光二極體元件的該主動層與該犧牲圖案層之間。
- 如申請專利範圍第3項所述的發光裝置,其中該發光二極體元件還包括:一絕緣層,設置於該第一型半導體層與該第二型半導體層上,且具有分別與該第一型半導體層與該第二型半導體層重疊的多個開口,該些電極分別透過該絕緣層的該些開口與該第一型半導體層及該第二型半導體層電性連接;其中,該犧牲圖案層接觸於該發光二極體元件的該絕緣層及該些連接圖案。
- 如申請專利範圍第3項所述的發光裝置,其中該些接墊之一與該些連接圖案之一接觸的一表面與該基底的距離大於該些接墊之另一與該些連接圖案之另一接觸的一表面與該基底的距離。
- 如申請專利範圍第3項所述的發光裝置,其中該些接墊之一的厚度大於該些接墊之另一的厚度。
- 如申請專利範圍第3項所述的發光裝置,更包括:一輔助導電圖案,設置於該些接墊之一上,且與該些接墊之該一電性連接。
- 如申請專利範圍第7項所述的發光裝置,更包括:一第一介電層,設置於該些接墊上,且具有一第一接觸窗,其 中該輔助導電圖案設置於該第一介電層上且透過該第一接觸窗與該些接墊之該一電性連接。
- 如申請專利範圍第8項所述的發光裝置,其中該第一介電層還具有一第二接觸窗,該第二接觸窗與該些接墊的另一重疊,而該些連接圖案之一透過該第二接觸窗與該些接墊之該另一電性連接。
- 如申請專利範圍第1項所述的發光裝置,還包括:一第二介電層,設置於該些接墊上,且具有分別與該些接墊重疊的多個接觸窗;多個互連圖案,設置於該第二介電層上,且透過該第二介電層的該些接觸窗與分別該些接墊電性連接;其中,該犧牲圖案層設置於該第二介電層上,而該發光二極體元件的該些連接圖案分別與該些互連圖案電性連接。
- 一種發光裝置的製造方法,包括:提供一基底以及設置於該基底上的多個接墊;形成一犧牲材料層於該基底上,以覆蓋該些接墊;設置一發光二極體元件於該犧牲材料層上,其中該發光二極體元件包括一第一型半導體層、一第二型半導體層、位於該第一型半導體層與該第二型半導體層之間的一主動層、分別與該第一型半導體層及該第二型半導體層電性連接的多個電極以及分別設置於該些電極上的多個連接圖案,且該些連接圖案的材料包括一可熱流動導電材料; 圖案化該犧牲材料層,以形成一犧牲圖案層,且使該發光二極體元件之該些連接圖案與該些接墊之間形成多個間隙,其中該犧牲圖案層暴露該些接墊之每一個的至少一部分;以及進行一加熱工序,以使該些連接圖案流動,而分別與該些接墊電性連接。
- 如申請專利範圍第11項所述的發光裝置的製造方法,其中圖案化該犧牲材料層以形成該犧牲圖案層的步驟包括:以該發光二極體元件為一遮罩,對該犧牲材料層進行一過蝕刻製程,以形成該犧牲圖案層。
- 如申請專利範圍第12項所述的發光裝置的製造方法,其中該犧牲圖案層於該基底上的一垂直投影位於該發光二極體元件於該基底上的一垂直投影以內,且該犧牲圖案層於該基底上之該垂直投影的面積小於該發光二極體元件於該基底上之該垂直投影的面積。
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US11037902B2 (en) | 2021-06-15 |
CN110444558B (zh) | 2021-11-16 |
CN110444558A (zh) | 2019-11-12 |
US20210175202A1 (en) | 2021-06-10 |
US20200219839A1 (en) | 2020-07-09 |
TW202027311A (zh) | 2020-07-16 |
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