MX347995B - Emisor híbrido de celda solar con contacto posterior. - Google Patents

Emisor híbrido de celda solar con contacto posterior.

Info

Publication number
MX347995B
MX347995B MX2015007998A MX2015007998A MX347995B MX 347995 B MX347995 B MX 347995B MX 2015007998 A MX2015007998 A MX 2015007998A MX 2015007998 A MX2015007998 A MX 2015007998A MX 347995 B MX347995 B MX 347995B
Authority
MX
Mexico
Prior art keywords
solar cell
issuer
back contact
cell hybrid
emitter
Prior art date
Application number
MX2015007998A
Other languages
English (en)
Other versions
MX2015007998A (es
Inventor
Loscutoff Paul
Rim Seung
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50929539&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MX347995(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of MX2015007998A publication Critical patent/MX2015007998A/es
Publication of MX347995B publication Critical patent/MX347995B/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/227—Arrangements for electrodes of back-contact photovoltaic cells for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

Una celda solar de contacto completamente posterior tiene un diseño de emisor híbrido. La celda solar tiene una capa dieléctrica delgada (102) formada en una superficie del lado posterior de un sustrato de silicio cristalino simple (101). Un emisor (103) de la celda solar está hecho de silicio policristalino impurificado que está formado en la capa dieléctrica delgada (102). El otro emisor (108) de la celda solar está formado en el sustrato de silicio cristalino simple (101) y está hecho de silicio cristalino simple impurificado. La celda solar incluye agujeros de contacto que permiten que los contactos de metal (107) se conecten a los emisores correspondientes (108, 103).
MX2015007998A 2012-12-19 2013-12-17 Emisor híbrido de celda solar con contacto posterior. MX347995B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/720,721 US9312406B2 (en) 2012-12-19 2012-12-19 Hybrid emitter all back contact solar cell
PCT/US2013/075808 WO2014100004A1 (en) 2012-12-19 2013-12-17 Hybrid emitter all back contact solar cell

Publications (2)

Publication Number Publication Date
MX2015007998A MX2015007998A (es) 2016-02-19
MX347995B true MX347995B (es) 2017-05-22

Family

ID=50929539

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2015007998A MX347995B (es) 2012-12-19 2013-12-17 Emisor híbrido de celda solar con contacto posterior.

Country Status (11)

Country Link
US (2) US9312406B2 (es)
EP (1) EP2936570B1 (es)
JP (1) JP6352940B2 (es)
KR (2) KR102360479B1 (es)
CN (2) CN107068778B (es)
AU (1) AU2013362916B2 (es)
MX (1) MX347995B (es)
MY (2) MY172208A (es)
SG (2) SG11201504664RA (es)
TW (1) TWI587529B (es)
WO (1) WO2014100004A1 (es)

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Also Published As

Publication number Publication date
CN107068778B (zh) 2020-08-14
CN104885232A (zh) 2015-09-02
KR20150097647A (ko) 2015-08-26
KR102360479B1 (ko) 2022-02-14
MY198456A (en) 2023-08-30
US9564551B2 (en) 2017-02-07
AU2013362916B2 (en) 2017-06-22
KR20210046826A (ko) 2021-04-28
TW201432923A (zh) 2014-08-16
EP2936570B1 (en) 2017-08-16
US9312406B2 (en) 2016-04-12
TWI587529B (zh) 2017-06-11
JP2016501452A (ja) 2016-01-18
CN104885232B (zh) 2017-03-15
WO2014100004A1 (en) 2014-06-26
MX2015007998A (es) 2016-02-19
JP6352940B2 (ja) 2018-07-04
SG11201504664RA (en) 2015-07-30
AU2013362916A1 (en) 2015-06-18
EP2936570A1 (en) 2015-10-28
US20140166095A1 (en) 2014-06-19
SG10201709897UA (en) 2017-12-28
CN107068778A (zh) 2017-08-18
US20160204288A1 (en) 2016-07-14
EP2936570A4 (en) 2016-01-27
MY172208A (en) 2019-11-15

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