CN107068778B - 混合型发射极全背接触式太阳能电池 - Google Patents

混合型发射极全背接触式太阳能电池 Download PDF

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CN107068778B
CN107068778B CN201710080612.XA CN201710080612A CN107068778B CN 107068778 B CN107068778 B CN 107068778B CN 201710080612 A CN201710080612 A CN 201710080612A CN 107068778 B CN107068778 B CN 107068778B
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保罗·卢斯科托福
塞温·里姆
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Abstract

本发明公开了一种具有混合型发射极设计的全背接触式太阳能电池。所述太阳能电池具有形成在单晶硅基板(101)的背侧表面上的薄介质层(102)。所述太阳能电池的一个发射极(103)由形成在所述薄介质层(102)上的掺杂多晶硅制成。所述太阳能电池的另一个发射极(108)形成在所述单晶硅基板(101)中并由掺杂单晶硅制成。所述太阳能电池包括接触孔，所述接触孔允许金属触点(107)连接到相应的发射极(108、103)。

Description

混合型发射极全背接触式太阳能电池
本申请是基于申请日为2013年12月17日、申请号为201380067323.6(国际申请号为PCT/US2013/075808)、发明创造名称为“混合型发射极全背接触式太阳能电池”的中国专利申请的分案申请。
与联邦政府资助的研究或开发有关的声明
本文描述的发明得到美国政府支持，在美国能源部授予的编号DE-FC36-07GO17043的合同下完成。美国政府可拥有本发明的某些权利。
技术领域
本文中所述主题的实施例整体涉及太阳能电池。更具体地讲，所述主题的实施例涉及太阳能电池制造方法和结构。
背景技术
太阳能电池是为人们所熟知的用于将太阳辐射转换成电能的装置。太阳能电池具有在正常工作期间面向太阳以收集太阳辐射的正面，以及与正面相对的背面。在全背接触式太阳能电池中，所有金属触点和相应的发射极均形成在太阳能电池的背面上。外部电路(如，负载)可连接到将由太阳能电池供电的金属触点。
为了节省有商业价值的可再生能源，需要以低成本制造太阳能电池。本发明的实施例涉及混合型发射极设计，该设计在保持效率的同时简化太阳能电池的制造。
发明内容
在一个实施例中，全背接触式太阳能电池具有混合型发射极设计。太阳能电池可具有形成在单晶硅基板的背侧表面上的薄介质层。该薄介质层可包含直接形成于单晶硅基板的背侧表面上的二氧化硅。太阳能电池的一个发射极可包含形成在薄介质层上的掺杂多晶硅。太阳能电池的另一个发射极可形成在单晶硅基板中并包含掺杂单晶硅。太阳能电池包括接触孔，其允许金属触点连接到相应的发射极。
所属领域的技术人员在阅读本公开内容的全文时将易于明了本发明的这些特征和其他特征，本公开内容包括附图和权利要求书。
附图说明
结合以下附图考虑时，可通过参考具体实施方式和权利要求得到对主题的更完整理解，其中在所有这些附图中，相似标号指代类似元件。附图未按比例绘制。
图1-图12为示意性地说明根据本发明实施例的制造太阳能电池的方法的截面图。
图13示出了根据本发明实施例的制造太阳能电池的方法流程图。
具体实施方式
在本发明中，提供了许多具体的细节，例如设备、工艺步骤和结构的例子，以提供对本发明实施例的全面理解。然而，所属领域的技术人员将认识到，可在不具有这些具体细节中的一个或多个具体细节的情况下实践本发明。在其他示例中，不显示或描述众所周知的细节以避免混淆本发明的方面。
图1-图12为示意性地说明根据本发明实施例的制造太阳能电池的方法的截面图。图1-图12未按比例绘制。
图1中，在单晶硅基板101上形成薄介质层102。基板101可包括长寿命N型单晶硅晶片。在一个实施例中，薄介质层102包含直接形成在单晶硅基板101的背侧表面131上的二氧化硅。背侧表面131与单晶硅基板101的正侧表面132相对。正侧表面132在太阳能电池的正面上，其也称为“向阳面”，因为它在正常工作期间面向太阳。背侧表面131在太阳能电池的背面上。因为发射极和相应的金属触点片全部在太阳能电池的背面上形成，故制造中的太阳能电池为全背接触式太阳能电池。
薄介质层102可提供隧穿功能，例如作为隧道氧化物。在一个实施例中，薄介质层102包含直接热生长在背侧表面131上以至小于或等于40埃的厚度(例如，介于5至40埃之间，优选地为20埃的厚度)的二氧化硅。
图2中，在薄介质层102上形成多个掺杂多晶硅发射极103。为了清楚地举例说明，仅在图中示出一个多晶硅发射极103。多晶硅发射极103可在沉积期间掺杂或在沉积之后掺杂。在图2的例子中，多晶硅发射极103掺杂有P型掺杂物，诸如硼。可以理解，多晶硅发射极103还可掺杂有N型掺杂物，这适当地改变了对其他发射极和/或单晶硅基板101的掺杂。在图2的例子中，可例如采用湿法刻蚀或干法刻蚀将薄介质层102中不在多晶硅发射极103下方的部分移除。
从下文将更明显地看出，制造中的太阳能电池仅具有一种极性(在该例子中为P型)的多晶硅发射极；极性相反的发射极为单晶硅发射极。这有利地允许多晶硅发射极103在原位掺杂。
可通过如图9所示在薄介质层102上形成一层多晶硅层201而形成多晶硅发射极103。该多晶硅层201可通过沉积工艺(例如，通过低压化学气相沉积法(LPCVD))形成，其厚度例如为约1000埃至5000埃。随后是如图10所示的图案化步骤，诸如掩模和蚀刻，用于将多晶硅层201图案化。在图10的例子中，在将薄介质层102图案化期间，薄介质层102呈现出图案。图案化的多晶硅层201充当多晶硅发射极103。该多晶硅层201可在图案化步骤之前或之后掺杂。
也可采用其他处理步骤形成多晶硅发射极103，包括通过图11所示的印刷。在图11的例子中，使用喷墨打印机的印刷头205选择性地印刷出发射极203。发射极203可包含喷墨印刷在薄介质层102上的硅纳米粒子。发射极203可在印刷步骤之前或之后掺杂。热处理步骤使硅纳米粒子聚结形成多晶硅，其充当多晶硅发射极103。因为用于在单晶硅101中形成单晶硅发射极的掺杂物可扩散穿过薄介质层102，故不必额外对该薄介质层102进行蚀刻，由此有利地省去了图案化步骤。
继续参见图3，形成多晶硅发射极103后，在多晶硅发射极103和单晶硅基板101上形成掺杂物源层104。在图3的例子中，掺杂物源层104包含N型掺杂物(诸如磷)，以便随后在单晶硅基板101中形成N型发射极。为了适应不同的掺杂物极性要求，可以改变掺杂物源层104中的掺杂物(例如，改变为P型)。在一个实施例中，掺杂物源层104包括通过例如大气压化学气相沉积法(APCVD)形成的厚约1000埃的磷硅酸盐玻璃(PSG)毯覆式层。
图4中，执行扩散步骤以使掺杂物从掺杂物源层104扩散到单晶硅基板101，从而形成单晶硅发射极108。在图4的例子中，由于掺杂物源层104包含N型掺杂物，故所得的发射极108包含N型掺杂单晶硅。该扩散步骤可通过例如在扩散炉中的热处理过程来执行。在该扩散步骤期间，来自多晶硅发射极103的一定量掺杂物可扩散穿过薄介质层102，以在单晶硅基板101内形成掺杂区109。在图4的例子中，因为多晶硅发射极103掺杂有P型掺杂物，所以掺杂区109为P型掺杂区。
要利用多晶硅发射极103下方的低电荷载流子复合，与单晶硅发射极108相比，多晶硅发射极103可覆盖单晶硅基板101背表面131的更多面积。例如，多晶硅发射极103可具有覆盖背表面131总面积的至少80％的总面积。
图5中，在掺杂物源层104上形成材料叠堆105。材料叠堆105可包括一层或多层材料，诸如防潮层、抗反射涂层，以及取决于制造过程特殊要求的其他材料层。材料叠堆105可在扩散步骤之前或之后形成。
图6中，形成了接触孔106，以使单晶硅发射极108和多晶硅发射极103暴露。一般来讲，太阳能电池中有多个发射极108和103，每个发射极通过相应的接触孔106连接到相应的金属触点。在图6的例子中，为了暴露下面的发射极103，穿过材料叠堆105和掺杂物源层104但不穿过薄介质层102形成了接触孔106。同样在图6的例子中，为了暴露下面的发射极108，穿过材料叠堆105和掺杂物源层104形成了接触孔106。当薄介质层102的一部分留在发射极108上时(例如，像在图12的例子中那样)，还穿过薄介质层102形成了相应的孔106，以使下面的发射极108暴露。接触孔106可通过激光烧蚀、掩模和蚀刻、或其他处理步骤形成。
图7中，在接触孔106内形成金属触点107，以连接到相应的发射极。金属触点107可包括单层金属触点或多层金属触点。比如，金属触点107可包括发射极(如发射极103或108)上形成的铝、铝上形成的包含钛钨的扩散阻挡层，以及扩散阻挡层上形成的包含铜的晶种层。
在图7的例子中，连接到单晶硅发射极108的金属触点107为N极性金属触点，因为其连接到N型掺杂发射体108。相似地，连接到多晶硅发射极103的金属触点107为P极性金属触点，因为其连接到P型掺杂发射极103。N极性金属触点连接在一起并与P极性金属触点电绝缘，其中P极性金属触点也连接在一起。N极性金属触点可与P极性金属触点相互交叉。
太阳能电池的制造还可以包括另外的处理步骤。如图8所示，可将单晶硅基板101的正侧表面132纹理化。在一个实施例中，采用包含氢氧化钾和异丙醇的湿蚀刻工艺，使正侧表面132具备无规棱锥纹理。该纹理化表面有助于提高太阳辐射收集效率。正侧表面132还可包括材料叠堆133，该材料叠堆133可包括一层或多层材料，诸如抗反射涂层、钝化层等。在不减损本发明优点的前提下，对正侧表面132执行或在正侧表面132下方执行的纹理化处理和其他处理可以在制造过程的任意合适步骤处执行。
由于一种极性的发射极包含掺杂多晶硅，而另一种极性(即相反极性)的发射极包含形成在单晶硅基板中的掺杂单晶硅，故所得的太阳能电池(在一个实施例中为全背接触式太阳能电池)具有混合型发射极设计。更具体地讲，在图8的例子中，发射极103包含P型掺杂多晶硅，而发射极108包含N型掺杂单晶硅并形成在N型掺杂单晶硅基板中。应当理解，发射极103、发射极108和基板101的掺杂的极性可随掺杂其他特征所作出的适当改变而变化。例如，在其他实施例中，单晶硅基板101可为P型掺杂的，单晶硅发射极108可为P型掺杂的，而多晶硅发射极103可为N型掺杂的。
一般来讲，在单晶硅基板中有P型掺杂发射极和N型掺杂发射极两者的发射极设计中，发射极内的掺杂物浓度必须在获得低接触电阻所需的高掺杂物浓度与高少数载流子寿命所需的低掺杂物浓度间实现平衡。低接触电阻与高少数载流子寿命这两种相互冲突的需求导致未达最优的太阳能电池结构。
其中P型掺杂发射极和N型掺杂发射极均形成在多晶硅中的太阳能电池消除了低接触电阻与高少数载流子寿命之间的折衷。具体地讲，将多晶硅发射极从单晶硅基板分离的介质层筛选出少数载流子，从而实现较高的掺杂物浓度，同时维持相对高的少数载流子寿命。主要缺点是需要在多晶硅中的P型掺杂发射极与N型掺杂发射极间形成沟槽。要形成这种沟槽，需要在太阳能电池的背侧表面上执行另外的图案化步骤和特定钝化，这会增加太阳能电池的制造成本。
本发明的混合型发射极设计提供了迄今尚未实现的许多有益效果，包括多晶硅发射极103的较高掺杂物浓度，以及较低接触电阻。这无需通过在单晶硅基板101中提供单晶硅发射极108来形成沟槽就能实现。发射极间没有沟槽便省去了图案化步骤和相关的工艺步骤。另外，由于仅涉及一种极性的多晶硅发射极，故多晶硅发射极可在原位掺杂。因此，本发明的太阳能电池以较低的制造成本实现了所有多晶硅发射极的绝大多数优点。
现在参见图13，其示出了根据本发明实施例的制造太阳能电池的方法300的流程图。在图13的例子中，在单晶硅基板的背侧表面上形成薄介质层(步骤301)。在一个实施例中，硅基板包括掺杂有N型掺杂物的高寿命单晶硅晶片。该薄介质层可包含直接热生长于单晶硅基板的背侧表面上的二氧化硅。在薄介质层上形成包含掺杂多晶硅的第一发射极(步骤302)。第一发射极可以是掺杂多晶硅以具有第一极性。例如，该多晶硅可掺杂有P型掺杂物。
可根据方法400形成包含多晶硅的第一发射极，方式为：在薄介质层上形成掺杂多晶硅层(步骤401)，并且随后将掺杂多晶硅层图案化以形成第一发射极(步骤402)。还可根据方法500形成包含多晶硅的第一发射极，方式为：在薄介质层上印刷掺杂硅纳米粒子(步骤501)，并且随后进行热处理以使硅纳米粒子聚结形成多晶硅(步骤502)。第一发射极可在形成在薄介质层上之前或之后掺杂。
在单晶硅基板中形成第二发射极(步骤303)。在一个实施例中，形成第二发射极的方式为：在单晶硅基板上形成掺杂物源层，并且随后使掺杂物从掺杂物源层扩散到单晶硅基板中以形成包含单晶硅的第二发射极。第二发射极可被掺杂为具有与多晶硅发射极的第一极性相反的第二极性。在多晶硅发射极为P型掺杂的例子中，单晶硅发射极可掺杂有N型掺杂物，而单晶硅基板可掺杂有N型掺杂物。在多晶硅发射极为N型掺杂的其他例子中，单晶硅发射极可掺杂有P型掺杂物，而单晶硅基板可掺杂有P型掺杂物。
随后将相互交叉的金属触点连接到第一发射极和第二发射极(步骤304)。
本发明已公开了混合型发射极全背接触式太阳能电池及其制造方法。虽然已提供了本发明的具体实施例，但是应当理解，这些实施例是用于举例说明的目的，而不用于限制。通过阅读本发明，许多另外的实施例对于本领域的普通技术人员而言将是显而易见的。

Claims (8)

1.一种制造全背接触式太阳能电池的方法，所述方法包括：
在单晶硅基板上形成薄介质层，以暴露所述单晶硅基板的一部分表面；
在所述薄介质层上形成所述太阳能电池的第一发射极，其中，所述薄介质层在所述单晶硅基板与所述第一发射极之间，所述第一发射极包含掺杂有第一极性的掺杂物的多晶硅；
在所述第一发射极的表面上和所述单晶硅基板的所述部分表面上形成第一层材料，所述第一层材料包含掺杂物源层；
通过使掺杂物从所述掺杂物源层扩散到所述单晶硅基板中，在所述单晶硅基板中形成所述太阳能电池的第二发射极和第三发射极，所述第二发射极和所述第三发射极包含掺杂有与所述第一极性相反的第二极性的掺杂物的单晶硅，所述第一发射极形成在所述第二发射极和所述第三发射极之间，所述第二发射极和所述第三发射极从所述第一发射极的相对端开始形成；
形成第一金属触点，所述第一金属触点在所述太阳能电池的背面上连接到所述第一发射极，所述背面与所述太阳能电池的在正常工作期间面向太阳的正面相对；
形成第二金属触点，所述第二金属触点在所述太阳能电池的背面上连接到所述第二发射极；以及
形成第三金属触点，所述第三金属触点在所述太阳能电池的背面上连接到所述第三发射极，
其中所述第一金属触点穿过所述第一层材料但不穿过所述薄介质层连接到所述第一发射极。
2.根据权利要求1所述的方法，其中所述薄介质层包含二氧化硅并且直接形成在所述单晶硅基板的表面上。
3.根据权利要求1所述的方法，其中，所述第二金属触点穿过所述第一层材料和所述薄介质层连接到所述第二发射极。
4.根据权利要求1所述的方法，其中，所述第一发射极是P型掺杂发射极，所述第二发射极是N型掺杂发射极，所述单晶硅基板掺杂有N型掺杂物。
5.一种全背接触式太阳能电池，包括：
形成在单晶硅基板的一部分表面上的薄介质层；
形成在所述薄介质层上的所述太阳能电池的第一发射极，所述第一发射极包含掺杂有第一掺杂类型的掺杂物的多晶硅；
形成在所述第一发射极的表面上和所述单晶硅基板上未设置有所述薄介质层的一部分表面上的第一层材料，所述第一层材料包含掺杂物源层；
形成在所述单晶硅基板中的所述太阳能电池的第二发射极，所述第二发射极包含掺杂有来自所述掺杂物源层的第二掺杂类型的掺杂物的单晶硅；
形成在所述单晶硅基板中的所述太阳能电池的第三发射极，所述第三发射极包含掺杂有来自所述掺杂物源层的第二掺杂类型的掺杂物的单晶硅；
第一金属触点，所述第一金属触点在所述太阳能电池的背面上连接到所述第一发射极，所述背面与所述太阳能电池的在正常工作期间面向太阳的正面相对；
第二金属触点，所述第二金属触点在所述太阳能电池的背面上连接到所述第二发射极；以及
第三金属触点，所述第三金属触点在所述太阳能电池的背面上连接到所述第三发射极，
其中，所述第一发射极形成在所述第二发射极和所述第三发射极之间，所述第二发射极和所述第三发射极从所述第一发射极的相对端开始形成，并且所述薄介质层形成在所述单晶硅基板和所述第一发射极之间，
其中所述第一掺杂类型与所述第二掺杂类型相反，并且
其中所述第一金属触点穿过所述第一层材料但不穿过所述薄介质层连接到所述第一发射极。
6.根据权利要求5所述的全背接触式太阳能电池，其中，所述第一发射极掺杂有P型掺杂物，所述第二发射极掺杂有N型掺杂物，所述单晶硅基板掺杂有N型掺杂物。
7.根据权利要求5所述的全背接触式太阳能电池，其中所述薄介质层包含二氧化硅。
8.根据权利要求5所述的全背接触式太阳能电池，还包括：
金属触点，所述金属触点穿过所述薄介质层中的接触孔连接到所述第二发射极。
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Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
NL2013722B1 (en) 2014-10-31 2016-10-04 Univ Delft Tech Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions.
US9520507B2 (en) * 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
WO2018021952A1 (en) 2016-07-29 2018-02-01 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
WO2019011681A1 (en) 2017-07-12 2019-01-17 Exeger Operations Ab PHOTOVOLTAIC DEVICE HAVING A LIGHT ABSORPTION LAYER COMPRISING A PLURALITY OF GRAINS OF A DOPED SEMICONDUCTOR MATERIAL
SE540184C2 (en) 2016-07-29 2018-04-24 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10629758B2 (en) 2016-09-30 2020-04-21 Sunpower Corporation Solar cells with differentiated P-type and N-type region architectures
TWI580058B (zh) 2016-10-26 2017-04-21 財團法人工業技術研究院 太陽能電池
NL2017872B1 (en) 2016-11-25 2018-06-08 Stichting Energieonderzoek Centrum Nederland Photovoltaic cell with passivating contact
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
NL2019634B1 (en) 2017-09-27 2019-04-03 Univ Delft Tech Solar cells with transparent contacts based on poly-silicon-oxide
WO2019206679A1 (en) * 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
PL3794619T3 (pl) 2018-05-16 2022-07-04 Exeger Operations Ab Urządzenie fotowoltaiczne
EP3627527A1 (en) 2018-09-20 2020-03-25 Exeger Operations AB Photovoltaic device for powering an external device and a method for producing the photovoltaic device
US11824126B2 (en) 2019-12-10 2023-11-21 Maxeon Solar Pte. Ltd. Aligned metallization for solar cells
EP3982421A1 (en) 2020-10-09 2022-04-13 International Solar Energy Research Center Konstanz E.V. Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivating contact solar cells and thus-created solar cell
DE102020132245A1 (de) 2020-12-04 2022-06-09 EnPV GmbH Rückseitenkontaktierte Solarzelle und Herstellung einer solchen
CN112397596A (zh) * 2020-12-28 2021-02-23 东方日升新能源股份有限公司 一种低成本的高效太阳能电池及其制备方法
CN115548155A (zh) 2021-06-30 2022-12-30 晶科绿能(上海)管理有限公司 太阳能电池及光伏组件
US20230027079A1 (en) * 2021-07-22 2023-01-26 Solarlab Aiko Europe Gmbh Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
CN113284961B (zh) * 2021-07-22 2021-09-28 浙江爱旭太阳能科技有限公司 一种太阳能电池及其钝化接触结构、电池组件及光伏系统
DE102022129955A1 (de) 2022-11-11 2024-05-16 EnPV GmbH Rückseitenkontaktierte Solarzelle mit Aluminiummetallisierung und Herstellungsverfahren

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
CN101777603A (zh) * 2009-01-08 2010-07-14 北京北方微电子基地设备工艺研究中心有限责任公司 背接触太阳能电池的制造方法
CN101999175A (zh) * 2008-04-09 2011-03-30 应用材料股份有限公司 用于多晶硅发射极太阳能电池的简化背触点
CN102239572A (zh) * 2008-12-04 2011-11-09 太阳能公司 形成有多晶硅掺杂区的背面接触太阳能电池

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4427839A (en) 1981-11-09 1984-01-24 General Electric Company Faceted low absorptance solar cell
US4665277A (en) 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
US4927770A (en) 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5217539A (en) 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5053083A (en) 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5479018A (en) 1989-05-08 1995-12-26 Westinghouse Electric Corp. Back surface illuminated infrared detector
US5030295A (en) 1990-02-12 1991-07-09 Electric Power Research Institut Radiation resistant passivation of silicon solar cells
US5164019A (en) 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US5266125A (en) 1992-05-12 1993-11-30 Astropower, Inc. Interconnected silicon film solar cell array
US5360990A (en) 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
US5369291A (en) 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
JPH0786271A (ja) 1993-09-17 1995-03-31 Fujitsu Ltd シリコン酸化膜の作製方法
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US5620904A (en) 1996-03-15 1997-04-15 Evergreen Solar, Inc. Methods for forming wraparound electrical contacts on solar cells
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6262359B1 (en) 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
US6423568B1 (en) 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6387726B1 (en) 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6274402B1 (en) 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6313395B1 (en) 2000-04-24 2001-11-06 Sunpower Corporation Interconnect structure for solar cells and method of making same
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
JP3490964B2 (ja) 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
DE10045249A1 (de) 2000-09-13 2002-04-04 Siemens Ag Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements
CA2370731A1 (en) 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
CN100401532C (zh) 2001-11-26 2008-07-09 壳牌阳光有限公司 太阳能电池及其制造方法
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US6998288B1 (en) 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
US20050268963A1 (en) 2004-02-24 2005-12-08 David Jordan Process for manufacturing photovoltaic cells
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US20060130891A1 (en) 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
CN101080511A (zh) 2004-11-10 2007-11-28 德斯塔尔科技公司 用于使用连续过程形成薄膜太阳能电池的方法和设备
EP1693903B1 (en) 2005-02-18 2011-05-18 Clean Venture 21 Corporation Array of spherical solar cells and its method of fabrication
US20070023081A1 (en) 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7339728B2 (en) 2005-10-11 2008-03-04 Cardinal Cg Company Low-emissivity coatings having high visible transmission and low solar heat gain coefficient
ES2357665T3 (es) 2005-11-28 2011-04-28 Mitsubishi Electric Corporation Célula de pila solar y su procedimiento de fabricación.
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
KR100880946B1 (ko) 2006-07-03 2009-02-04 엘지전자 주식회사 태양전지 및 그 제조방법
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
US7705237B2 (en) * 2006-11-27 2010-04-27 Sunpower Corporation Solar cell having silicon nano-particle emitter
US20080173347A1 (en) 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
US8329503B1 (en) * 2007-11-01 2012-12-11 Sandia Corporation Photovoltaic solar concentrator
US9287430B1 (en) * 2007-11-01 2016-03-15 Sandia Corporation Photovoltaic solar concentrator
US20090159111A1 (en) 2007-12-21 2009-06-25 The Woodside Group Pte. Ltd Photovoltaic device having a textured metal silicide layer
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US8207444B2 (en) 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
DE102008060404A1 (de) * 2008-07-30 2010-02-11 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Einseitig kontaktiertes Dünnschicht-Solarmodul mit einer inneren Kontaktschicht
EP2478562A4 (en) 2009-09-20 2014-10-22 Intermolecular Inc METHODS OF FORMING CRYSTALLINE SILICON SOLAR CELLS FOR USE IN COMBINATION SIEVING
CN102668115B (zh) 2009-09-21 2015-11-25 纳克公司 用于薄膜太阳能电池形成的硅墨水、对应方法和太阳能电池结构
US20110132444A1 (en) 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
JP5906393B2 (ja) 2010-02-26 2016-04-20 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池の製造方法
US8071418B2 (en) 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
US8492253B2 (en) 2010-12-02 2013-07-23 Sunpower Corporation Method of forming contacts for a back-contact solar cell
JP5891382B2 (ja) 2011-03-25 2016-03-23 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法
KR20120129264A (ko) * 2011-05-19 2012-11-28 삼성디스플레이 주식회사 태양 전지 및 이의 제조방법
CN102856328B (zh) * 2012-10-10 2015-06-10 友达光电股份有限公司 太阳能电池及其制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
CN101999175A (zh) * 2008-04-09 2011-03-30 应用材料股份有限公司 用于多晶硅发射极太阳能电池的简化背触点
CN102239572A (zh) * 2008-12-04 2011-11-09 太阳能公司 形成有多晶硅掺杂区的背面接触太阳能电池
CN101777603A (zh) * 2009-01-08 2010-07-14 北京北方微电子基地设备工艺研究中心有限责任公司 背接触太阳能电池的制造方法

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