CN1231980C - 发光装置 - Google Patents
发光装置 Download PDFInfo
- Publication number
- CN1231980C CN1231980C CNB021186979A CN02118697A CN1231980C CN 1231980 C CN1231980 C CN 1231980C CN B021186979 A CNB021186979 A CN B021186979A CN 02118697 A CN02118697 A CN 02118697A CN 1231980 C CN1231980 C CN 1231980C
- Authority
- CN
- China
- Prior art keywords
- light
- mentioned
- wire
- lead
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 145
- 229920002050 silicone resin Polymers 0.000 claims description 116
- 229920005989 resin Polymers 0.000 claims description 97
- 239000011347 resin Substances 0.000 claims description 97
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 239000002184 metal Substances 0.000 claims description 84
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims description 25
- 230000005611 electricity Effects 0.000 claims 1
- 230000031700 light absorption Effects 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract 1
- 238000001125 extrusion Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 30
- 239000003822 epoxy resin Substances 0.000 description 29
- 229920000647 polyepoxide Polymers 0.000 description 29
- 230000000694 effects Effects 0.000 description 21
- 238000009826 distribution Methods 0.000 description 16
- 238000003466 welding Methods 0.000 description 15
- 230000000149 penetrating effect Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 238000004020 luminiscence type Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 239000000049 pigment Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 208000034189 Sclerosis Diseases 0.000 description 8
- 238000011049 filling Methods 0.000 description 8
- 239000007767 bonding agent Substances 0.000 description 7
- 238000003306 harvesting Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229920005992 thermoplastic resin Polymers 0.000 description 7
- 239000003086 colorant Substances 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910004283 SiO 4 Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000001351 cycling effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004382 potting Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000004087 circulation Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 241000233855 Orchidaceae Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000012860 organic pigment Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 241000675108 Citrus tangerina Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 206010023126 Jaundice Diseases 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000004893 oxazines Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003732 xanthenes Chemical class 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C15/00—Details
- F24C15/20—Removing cooking fumes
- F24C15/2071—Removing cooking fumes mounting of cooking hood
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01063—Europium [Eu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Combustion & Propulsion (AREA)
- Chemical & Material Sciences (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP110676/01 | 2001-04-09 | ||
JP2001110676A JP2002314143A (ja) | 2001-04-09 | 2001-04-09 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA200510127175XA Division CN1797766A (zh) | 2001-04-09 | 2002-04-03 | 发光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1381906A CN1381906A (zh) | 2002-11-27 |
CN1231980C true CN1231980C (zh) | 2005-12-14 |
Family
ID=18962399
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA200510127175XA Pending CN1797766A (zh) | 2001-04-09 | 2002-04-03 | 发光装置 |
CNB021186979A Expired - Lifetime CN1231980C (zh) | 2001-04-09 | 2002-04-03 | 发光装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA200510127175XA Pending CN1797766A (zh) | 2001-04-09 | 2002-04-03 | 发光装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6747293B2 (zh) |
EP (1) | EP1249874A3 (zh) |
JP (1) | JP2002314143A (zh) |
KR (3) | KR20020079516A (zh) |
CN (2) | CN1797766A (zh) |
Families Citing this family (201)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002314138A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP4101468B2 (ja) * | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
JP2002374007A (ja) * | 2001-06-15 | 2002-12-26 | Toyoda Gosei Co Ltd | 発光装置 |
DE10241989A1 (de) | 2001-11-30 | 2003-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE10237084A1 (de) * | 2002-08-05 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements |
JP4360788B2 (ja) * | 2002-08-29 | 2009-11-11 | シチズン電子株式会社 | 液晶表示板用のバックライト及びそれに用いる発光ダイオードの製造方法 |
TWI292961B (en) * | 2002-09-05 | 2008-01-21 | Nichia Corp | Semiconductor device and an optical device using the semiconductor device |
JP2004186168A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
JP2004266246A (ja) | 2003-02-12 | 2004-09-24 | Toyoda Gosei Co Ltd | 発光装置 |
EP1604385B1 (de) * | 2003-03-10 | 2019-12-11 | OSRAM Opto Semiconductors GmbH | Optoelektronisches bauelement mit einem gehäusekörper aus kunststoffmaterial |
TW200427111A (en) | 2003-03-12 | 2004-12-01 | Shinetsu Chemical Co | Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device |
US7633093B2 (en) * | 2003-05-05 | 2009-12-15 | Lighting Science Group Corporation | Method of making optical light engines with elevated LEDs and resulting product |
US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US7528421B2 (en) * | 2003-05-05 | 2009-05-05 | Lamina Lighting, Inc. | Surface mountable light emitting diode assemblies packaged for high temperature operation |
US7777235B2 (en) | 2003-05-05 | 2010-08-17 | Lighting Science Group Corporation | Light emitting diodes with improved light collimation |
JP4586967B2 (ja) * | 2003-07-09 | 2010-11-24 | 信越化学工業株式会社 | 発光半導体被覆保護材及び発光半導体装置 |
TWI373150B (en) | 2003-07-09 | 2012-09-21 | Shinetsu Chemical Co | Silicone rubber composition, light-emitting semiconductor embedding/protecting material and light-emitting semiconductor device |
WO2005025933A2 (en) * | 2003-09-08 | 2005-03-24 | Schefenacker Vision Systems Usa Inc. | Led light source |
US7723740B2 (en) * | 2003-09-18 | 2010-05-25 | Nichia Corporation | Light emitting device |
JP2005093913A (ja) * | 2003-09-19 | 2005-04-07 | Nichia Chem Ind Ltd | 発光装置 |
TWI291770B (en) | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
JP4803339B2 (ja) | 2003-11-20 | 2011-10-26 | 信越化学工業株式会社 | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 |
CN100377370C (zh) * | 2003-11-22 | 2008-03-26 | 鸿富锦精密工业(深圳)有限公司 | 发光二极管和面光源装置 |
US7518158B2 (en) | 2003-12-09 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices and submounts |
US7087465B2 (en) * | 2003-12-15 | 2006-08-08 | Philips Lumileds Lighting Company, Llc | Method of packaging a semiconductor light emitting device |
JP2005183531A (ja) * | 2003-12-17 | 2005-07-07 | Sharp Corp | 半導体発光装置 |
JP4309242B2 (ja) * | 2003-12-19 | 2009-08-05 | Necライティング株式会社 | 赤色蛍光体材料、赤色蛍光体材料を用いた白色発光ダイオードおよび白色発光ダイオードを用いた照明機器 |
DE10361650A1 (de) * | 2003-12-30 | 2005-08-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul und Verfahren zu dessen Herstellung |
JP4614679B2 (ja) * | 2004-01-29 | 2011-01-19 | 京セラ株式会社 | 発光装置およびその製造方法ならびに照明装置 |
JP4163641B2 (ja) * | 2004-02-25 | 2008-10-08 | 株式会社東芝 | Led素子 |
JP4632677B2 (ja) * | 2004-03-11 | 2011-02-16 | オリンパス株式会社 | 内視鏡装置 |
JP2006066868A (ja) * | 2004-03-23 | 2006-03-09 | Toyoda Gosei Co Ltd | 固体素子および固体素子デバイス |
KR100707870B1 (ko) * | 2004-04-27 | 2007-04-13 | 럭스피아(주) | 복수개의 발광 다이오드칩이 배치된 발광 다이오드 패캐지 |
JP4300418B2 (ja) | 2004-04-30 | 2009-07-22 | 信越化学工業株式会社 | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 |
JP4593974B2 (ja) * | 2004-05-27 | 2010-12-08 | 京セラ株式会社 | 発光装置および照明装置 |
WO2006005062A2 (en) * | 2004-06-30 | 2006-01-12 | Cree, Inc. | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
US8482663B2 (en) * | 2004-06-30 | 2013-07-09 | Osram Opto Semiconductors Gmbh | Light-emitting diode arrangement, optical recording device and method for the pulsed operation of at least one light-emitting diode |
JP2006019598A (ja) * | 2004-07-05 | 2006-01-19 | Citizen Electronics Co Ltd | 発光ダイオード |
TW200614548A (en) * | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
KR100674827B1 (ko) * | 2004-07-28 | 2007-01-25 | 삼성전기주식회사 | 백라이트 유니트용 led 패키지 |
JP4547569B2 (ja) * | 2004-08-31 | 2010-09-22 | スタンレー電気株式会社 | 表面実装型led |
WO2006059828A1 (en) * | 2004-09-10 | 2006-06-08 | Seoul Semiconductor Co., Ltd. | Light emitting diode package having multiple molding resins |
JP2006093299A (ja) * | 2004-09-22 | 2006-04-06 | Okumura Yu-Ki Co Ltd | 電飾装置 |
JP2006087572A (ja) * | 2004-09-22 | 2006-04-06 | Okumura Yu-Ki Co Ltd | 電飾装置 |
JP4166206B2 (ja) * | 2004-09-30 | 2008-10-15 | 共立エレックス株式会社 | 反射板及び発光ダイオード用パッケージ並びに発光ダイオード |
US7748873B2 (en) * | 2004-10-07 | 2010-07-06 | Seoul Semiconductor Co., Ltd. | Side illumination lens and luminescent device using the same |
TWM271255U (en) * | 2004-10-08 | 2005-07-21 | Bright Led Electronics Corp | High-power surface-mounted light-emitting diode with high heat dissipation property |
TWI257714B (en) * | 2004-10-20 | 2006-07-01 | Arima Optoelectronics Corp | Light-emitting device using multilayer composite metal plated layer as flip-chip electrode |
JP4796293B2 (ja) * | 2004-11-04 | 2011-10-19 | 株式会社 日立ディスプレイズ | 照明装置の製造方法 |
JP2006186158A (ja) * | 2004-12-28 | 2006-07-13 | Sharp Corp | 発光ダイオードランプおよび発光ダイオード表示装置 |
JP4634810B2 (ja) * | 2005-01-20 | 2011-02-16 | 信越化学工業株式会社 | シリコーン封止型led |
JP4143074B2 (ja) * | 2005-02-25 | 2008-09-03 | トキコーポレーション株式会社 | 発光ダイオード |
JP2006245020A (ja) * | 2005-02-28 | 2006-09-14 | Sharp Corp | 発光ダイオード素子とその製造方法 |
JP2006253215A (ja) * | 2005-03-08 | 2006-09-21 | Sharp Corp | 発光装置 |
KR100663906B1 (ko) * | 2005-03-14 | 2007-01-02 | 서울반도체 주식회사 | 발광 장치 |
KR100593933B1 (ko) * | 2005-03-18 | 2006-06-30 | 삼성전기주식회사 | 산란 영역을 갖는 측면 방출형 발광다이오드 패키지 및이를 포함하는 백라이트 장치 |
JP2006310771A (ja) * | 2005-03-30 | 2006-11-09 | Toshiba Discrete Technology Kk | 半導体発光装置 |
JP4744178B2 (ja) * | 2005-04-08 | 2011-08-10 | シャープ株式会社 | 発光ダイオード |
US7416906B2 (en) | 2005-05-18 | 2008-08-26 | Asahi Rubber Inc. | Soldering method for semiconductor optical device, and semiconductor optical device |
US20060270808A1 (en) * | 2005-05-24 | 2006-11-30 | Shin-Etsu Chemical Co., Ltd. | Epoxy-silicone mixed resin composition, cured article thereof, and light-emitting semiconductor device |
KR100650191B1 (ko) * | 2005-05-31 | 2006-11-27 | 삼성전기주식회사 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드 |
TWI422044B (zh) * | 2005-06-30 | 2014-01-01 | Cree Inc | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 |
DE102005038698A1 (de) * | 2005-07-08 | 2007-01-18 | Tridonic Optoelectronics Gmbh | Optoelektronische Bauelemente mit Haftvermittler |
DE102005034793B3 (de) * | 2005-07-21 | 2007-04-19 | G.L.I. Global Light Industries Gmbh | Lichtemittierende Halbleiterdiode hoher Lichtleistung |
US7736070B2 (en) * | 2005-08-31 | 2010-06-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Double mold optocoupler |
JP4945106B2 (ja) * | 2005-09-08 | 2012-06-06 | スタンレー電気株式会社 | 半導体発光装置 |
US20070063213A1 (en) * | 2005-09-21 | 2007-03-22 | Lighthouse Technology Co., Ltd. | LED package |
US20070096133A1 (en) * | 2005-11-02 | 2007-05-03 | Lee Kian S | System and method for LED manufacturing |
JP2007180326A (ja) * | 2005-12-28 | 2007-07-12 | Showa Denko Kk | 発光装置 |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
KR100828891B1 (ko) | 2006-02-23 | 2008-05-09 | 엘지이노텍 주식회사 | Led 패키지 |
JP5130680B2 (ja) * | 2006-03-02 | 2013-01-30 | 日亜化学工業株式会社 | 半導体装置およびその形成方法 |
KR100783251B1 (ko) * | 2006-04-10 | 2007-12-06 | 삼성전기주식회사 | 양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법 |
JP4952233B2 (ja) * | 2006-04-19 | 2012-06-13 | 日亜化学工業株式会社 | 半導体装置 |
US7521727B2 (en) * | 2006-04-26 | 2009-04-21 | Rohm And Haas Company | Light emitting device having improved light extraction efficiency and method of making same |
TWI303494B (en) * | 2006-04-26 | 2008-11-21 | Everlight Electronics Co Ltd | Surface mounting optoelectronic device |
US7655957B2 (en) | 2006-04-27 | 2010-02-02 | Cree, Inc. | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
US9502624B2 (en) * | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
JP2007324417A (ja) * | 2006-06-01 | 2007-12-13 | Sharp Corp | 半導体発光装置とその製造方法 |
TWM302123U (en) * | 2006-06-13 | 2006-12-01 | Lighthouse Technology Co Ltd | The stand structure of light-emitting diode |
US7960819B2 (en) * | 2006-07-13 | 2011-06-14 | Cree, Inc. | Leadframe-based packages for solid state emitting devices |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
KR100780215B1 (ko) | 2006-07-27 | 2007-11-27 | 삼성전기주식회사 | 다수의 엘이디가 실장된 엘이디 패키지 |
KR101258227B1 (ko) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
US20080123023A1 (en) * | 2006-08-30 | 2008-05-29 | Trung Doan | White light unit, backlight unit and liquid crystal display device using the same |
JP4718405B2 (ja) * | 2006-09-19 | 2011-07-06 | シャープ株式会社 | 照明装置 |
JP4306772B2 (ja) | 2006-10-05 | 2009-08-05 | 日亜化学工業株式会社 | 発光装置 |
TW200824142A (en) * | 2006-11-22 | 2008-06-01 | Lighthouse Technology Co Ltd | High power diode holder and thereof package is described |
KR100845856B1 (ko) * | 2006-12-21 | 2008-07-14 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
KR20080065451A (ko) * | 2007-01-09 | 2008-07-14 | 삼성전기주식회사 | Led 패키지 |
US7781783B2 (en) * | 2007-02-07 | 2010-08-24 | SemiLEDs Optoelectronics Co., Ltd. | White light LED device |
US8093713B2 (en) * | 2007-02-09 | 2012-01-10 | Infineon Technologies Ag | Module with silicon-based layer |
US8421088B2 (en) | 2007-02-22 | 2013-04-16 | Sharp Kabushiki Kaisha | Surface mounting type light emitting diode |
US8604506B2 (en) | 2007-02-22 | 2013-12-10 | Sharp Kabushiki Kaisha | Surface mounting type light emitting diode and method for manufacturing the same |
JP2008251664A (ja) * | 2007-03-29 | 2008-10-16 | Toshiba Lighting & Technology Corp | 照明装置 |
JP4795293B2 (ja) * | 2007-03-30 | 2011-10-19 | ローム株式会社 | 半導体発光装置 |
CN101681960B (zh) * | 2007-05-09 | 2011-09-07 | 希爱化成株式会社 | 发光装置和发光装置用封装集合体 |
JP2008300573A (ja) * | 2007-05-30 | 2008-12-11 | Toshiba Corp | 発光装置 |
JP5233170B2 (ja) * | 2007-05-31 | 2013-07-10 | 日亜化学工業株式会社 | 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法 |
KR100801621B1 (ko) * | 2007-06-05 | 2008-02-11 | 서울반도체 주식회사 | Led 패키지 |
WO2009008210A1 (ja) * | 2007-07-11 | 2009-01-15 | C.I. Kasei Company, Limited | 発光装置 |
JP2009094199A (ja) * | 2007-10-05 | 2009-04-30 | Sharp Corp | 発光装置、面光源、表示装置と、その製造方法 |
US8390207B2 (en) * | 2007-10-09 | 2013-03-05 | Koninklijke Philipe Electronics N.V. | Integrated LED-based luminare for general lighting |
KR20090069842A (ko) * | 2007-12-26 | 2009-07-01 | 삼성에스디아이 주식회사 | 백색 형광체, 이를 이용하는 발광 유닛, 및 이 발광 유닛을갖는 표시 장치 |
TWI433875B (zh) | 2008-01-28 | 2014-04-11 | Shinetsu Chemical Co | 二縮水甘油基異氰尿酸基改性有機聚矽氧烷以及含有該有機聚矽氧烷的組成物 |
DE102008026841A1 (de) * | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
CN101533819B (zh) * | 2008-03-14 | 2013-01-16 | 旭丽电子(广州)有限公司 | 半导体封装构造、应用于半导体封装构造的导线架及导电件 |
KR20100003320A (ko) * | 2008-06-24 | 2010-01-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 |
WO2010009112A2 (en) * | 2008-07-16 | 2010-01-21 | 3M Innovative Properties Company | Stable light source |
JP5464825B2 (ja) | 2008-07-23 | 2014-04-09 | ローム株式会社 | Ledモジュール |
JP2010032732A (ja) * | 2008-07-28 | 2010-02-12 | Panasonic Corp | 液晶表示装置 |
JP2010031149A (ja) * | 2008-07-29 | 2010-02-12 | Shin-Etsu Chemical Co Ltd | 光半導体素子封止用樹脂組成物 |
JP5217800B2 (ja) * | 2008-09-03 | 2013-06-19 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
US20100116970A1 (en) * | 2008-11-12 | 2010-05-13 | Wen-Long Chou | Photo detection device |
JP4403199B2 (ja) * | 2008-11-17 | 2010-01-20 | 株式会社東芝 | 発光装置 |
TWI384591B (zh) * | 2008-11-17 | 2013-02-01 | Everlight Electronics Co Ltd | 發光二極體電路板 |
US8288785B2 (en) * | 2008-12-03 | 2012-10-16 | Seoul Semiconductor Co., Ltd. | Lead frame having light-reflecting layer, light emitting diode having the lead frame, and backlight unit having the light emitting diode |
JP5368809B2 (ja) * | 2009-01-19 | 2013-12-18 | ローム株式会社 | Ledモジュールの製造方法およびledモジュール |
JP5340763B2 (ja) * | 2009-02-25 | 2013-11-13 | ローム株式会社 | Ledランプ |
US8610156B2 (en) | 2009-03-10 | 2013-12-17 | Lg Innotek Co., Ltd. | Light emitting device package |
TWI378578B (en) * | 2009-03-25 | 2012-12-01 | Coretronic Corp | Light emitting diode package |
JP5327042B2 (ja) * | 2009-03-26 | 2013-10-30 | 豊田合成株式会社 | Ledランプの製造方法 |
CN101859757B (zh) * | 2009-04-07 | 2014-04-09 | 裕星企业有限公司 | 堆栈发光二极管芯片结构及其制造方法 |
KR101060761B1 (ko) * | 2009-04-23 | 2011-08-31 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 |
JP5251919B2 (ja) | 2009-05-08 | 2013-07-31 | 信越化学工業株式会社 | 光半導体素子封止用樹脂組成物 |
JP5305452B2 (ja) | 2009-06-12 | 2013-10-02 | 信越化学工業株式会社 | 光半導体素子封止用樹脂組成物 |
KR101064090B1 (ko) * | 2009-11-17 | 2011-09-08 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP4951090B2 (ja) * | 2010-01-29 | 2012-06-13 | 株式会社東芝 | Ledパッケージ |
KR101047778B1 (ko) * | 2010-04-01 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
JP5489280B2 (ja) | 2010-04-07 | 2014-05-14 | 信越化学工業株式会社 | 光半導体封止用エポキシ組成物 |
CN106298752A (zh) * | 2010-04-15 | 2017-01-04 | 西铁城电子株式会社 | 发光装置 |
JP6178725B2 (ja) | 2010-04-23 | 2017-08-09 | ピクセリジェント・テクノロジーズ,エルエルシー | ナノ結晶の合成、キャップ形成および分散 |
JP5528900B2 (ja) * | 2010-04-30 | 2014-06-25 | ローム株式会社 | 発光素子モジュール |
TWI561770B (en) * | 2010-04-30 | 2016-12-11 | Samsung Electronics Co Ltd | Light emitting device package, light source module, backlight unit, display apparatus, television set, and illumination apparatus |
KR101115536B1 (ko) * | 2010-05-11 | 2012-02-27 | 서울옵토디바이스주식회사 | 다색 발광 다이오드 |
KR101039994B1 (ko) * | 2010-05-24 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비한 라이트 유닛 |
DE102010029368A1 (de) | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung |
JP2012019062A (ja) | 2010-07-08 | 2012-01-26 | Shin Etsu Chem Co Ltd | 発光半導体装置、実装基板及びそれらの製造方法 |
DE102011003608A1 (de) * | 2010-08-20 | 2012-02-23 | Tridonic Gmbh & Co. Kg | Gehäustes LED-Modul |
KR20120024104A (ko) * | 2010-09-06 | 2012-03-14 | 서울옵토디바이스주식회사 | 발광 소자 |
JP2012069589A (ja) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | 発光装置 |
EP3190083B1 (en) | 2010-10-27 | 2020-08-26 | Pixelligent Technologies, LLC | Synthesis, capping and dispersion of nanocrystals |
US20120138981A1 (en) * | 2010-12-02 | 2012-06-07 | Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense | Light-Emitting Diode Apparatus and Method for Making the Same |
KR101626412B1 (ko) | 2010-12-24 | 2016-06-02 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
CN102157505A (zh) * | 2011-01-20 | 2011-08-17 | 日月光半导体制造股份有限公司 | 发光模块 |
JP4870233B1 (ja) * | 2011-02-14 | 2012-02-08 | E&E Japan株式会社 | チップled |
JP5753446B2 (ja) * | 2011-06-17 | 2015-07-22 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP5852339B2 (ja) * | 2011-06-21 | 2016-02-03 | ローム株式会社 | 光源装置および画像読取装置 |
KR101818466B1 (ko) * | 2011-08-18 | 2018-01-15 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 |
CN107425103B (zh) | 2011-08-22 | 2019-12-27 | Lg伊诺特有限公司 | 发光器件封装件和光装置 |
US9359689B2 (en) | 2011-10-26 | 2016-06-07 | Pixelligent Technologies, Llc | Synthesis, capping and dispersion of nanocrystals |
JP5865038B2 (ja) | 2011-11-30 | 2016-02-17 | 日東電工株式会社 | 素子接続用基板、その製造方法および発光ダイオード装置 |
DE102011056706B4 (de) * | 2011-12-20 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Anordnung und optoelektronisches Halbleiterbauteil |
US20130161670A1 (en) * | 2011-12-23 | 2013-06-27 | Sheng-Yang Peng | Light emitting diode packages and methods of making |
CN102593321B (zh) * | 2012-02-20 | 2015-11-25 | 深圳市安普光光电科技有限公司 | Led的封装方法、led封装结构及显示屏 |
US20130249387A1 (en) * | 2012-03-20 | 2013-09-26 | Chia-Fen Hsin | Light-emitting diodes, packages, and methods of making |
JP5935078B2 (ja) * | 2012-05-22 | 2016-06-15 | パナソニックIpマネジメント株式会社 | Ledモジュールおよびその製造方法、照明器具、直管形ledランプ |
JP5927056B2 (ja) * | 2012-06-14 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2014002807A1 (ja) * | 2012-06-28 | 2014-01-03 | 株式会社村田製作所 | 電子部品のキャンパッケージ構造 |
WO2014021030A1 (ja) * | 2012-07-30 | 2014-02-06 | ウシオ電機株式会社 | 光源ユニット |
TWM450831U (zh) * | 2012-11-23 | 2013-04-11 | Helio Optoelectronics Corp | 具有散熱單元之高亮度發光二極體燈具結構 |
KR102114931B1 (ko) * | 2012-12-18 | 2020-05-25 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US20140208689A1 (en) | 2013-01-25 | 2014-07-31 | Renee Joyal | Hypodermic syringe assist apparatus and method |
US10551011B2 (en) | 2013-01-25 | 2020-02-04 | Lumileds Llc | Lighting assembly and method for manufacturing a lighting assembly |
DE102013103416A1 (de) * | 2013-04-05 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierende Baugruppe und Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe |
KR102175729B1 (ko) * | 2013-08-09 | 2020-11-06 | 스미또모 가가꾸 가부시키가이샤 | 광학 필름 |
KR102270798B1 (ko) * | 2013-12-16 | 2021-06-30 | 삼성메디슨 주식회사 | 광음향 프로브 및 광음향 진단 장치 |
US10204887B2 (en) * | 2013-12-18 | 2019-02-12 | Lumileds Llc | Reflective solder mask layer for LED phosphor package |
KR102122361B1 (ko) | 2013-12-27 | 2020-06-15 | 삼성전자주식회사 | 플립칩 엘이디 패키지 기판 및 플립칩 엘이디 패키지 구조 |
DE102014110473A1 (de) | 2014-07-24 | 2016-01-28 | Osram Opto Semiconductors Gmbh | Träger für ein elektrisches Bauelement |
US10205069B2 (en) * | 2014-07-31 | 2019-02-12 | Bridgelux Inc. | LED array package |
KR102273653B1 (ko) * | 2014-08-29 | 2021-07-06 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR102256594B1 (ko) * | 2014-10-07 | 2021-05-26 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR102256593B1 (ko) * | 2014-10-08 | 2021-05-26 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR102288377B1 (ko) * | 2014-11-20 | 2021-08-11 | 서울반도체 주식회사 | 발광 장치 |
KR102288404B1 (ko) * | 2014-11-20 | 2021-08-11 | 서울반도체 주식회사 | 발광 장치 |
JP6325471B2 (ja) * | 2015-03-02 | 2018-05-16 | 株式会社東芝 | 光結合装置および絶縁装置 |
DE102015103840A1 (de) * | 2015-03-16 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierende Baugruppe |
JP2017034218A (ja) * | 2015-08-03 | 2017-02-09 | 株式会社東芝 | 半導体発光装置 |
JP6626294B2 (ja) | 2015-09-04 | 2019-12-25 | 株式会社東芝 | 半導体装置および光結合装置 |
JP2017112211A (ja) * | 2015-12-16 | 2017-06-22 | 豊田合成株式会社 | 発光装置の製造方法 |
US11304928B2 (en) | 2015-12-25 | 2022-04-19 | Fujifilm Toyama Chemical Co., Ltd. | Tablet comprising 1-(3-(2-(1-benzothiophen-5-yl)ethoxy)propyl)azetidin-3-ol or salt thereof |
US11677059B2 (en) | 2017-04-26 | 2023-06-13 | Samsung Electronics Co., Ltd. | Light-emitting device package including a lead frame |
KR102335216B1 (ko) | 2017-04-26 | 2021-12-03 | 삼성전자 주식회사 | 발광소자 패키지 |
JP7004397B2 (ja) * | 2017-06-09 | 2022-01-21 | ローム株式会社 | 光学装置 |
CN107479259B (zh) * | 2017-08-25 | 2020-03-24 | 上海天马有机发光显示技术有限公司 | 显示面板和显示装置 |
JP7037046B2 (ja) | 2018-01-31 | 2022-03-16 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6822442B2 (ja) * | 2018-03-01 | 2021-01-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
DE102018211723A1 (de) | 2018-07-13 | 2020-01-16 | Osram Gmbh | Led-anordnung und beleuchtungsvorrichtung |
JP6645540B2 (ja) * | 2018-08-09 | 2020-02-14 | 日亜化学工業株式会社 | 発光装置用パッケージ成形体及びそれを用いた発光装置 |
KR102023085B1 (ko) * | 2018-08-16 | 2019-09-19 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP7176684B2 (ja) * | 2018-09-19 | 2022-11-22 | 豊田合成株式会社 | 発光装置 |
JP7248887B2 (ja) * | 2019-02-15 | 2023-03-30 | 日亜化学工業株式会社 | 樹脂パッケージ及び発光装置 |
JP6842485B2 (ja) * | 2019-03-04 | 2021-03-17 | ローム株式会社 | Ledモジュール |
TWI819073B (zh) * | 2019-08-22 | 2023-10-21 | 晶元光電股份有限公司 | 發光裝置、其製造方法及顯示模組 |
DE102020200848A1 (de) * | 2020-01-24 | 2021-07-29 | Robert Bosch Gesellschaft mit beschränkter Haftung | Sensorgehäuse und Verfahren zum Vergießen eines offenen Aufnahmeraums eines Sensorgehäuses |
JP6888709B2 (ja) * | 2020-04-09 | 2021-06-16 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
JP7389363B2 (ja) * | 2021-05-26 | 2023-11-30 | 日亜化学工業株式会社 | 発光装置 |
JP2023138199A (ja) * | 2022-03-19 | 2023-10-02 | Hoya株式会社 | 光照射モジュール、光照射装置 |
CN114927513A (zh) * | 2022-07-21 | 2022-08-19 | 杭州华普永明光电股份有限公司 | 一种发光模组及植物照明灯具 |
DE102022124732A1 (de) * | 2022-09-26 | 2024-03-28 | Ams-Osram International Gmbh | Verfahren zur herstellung eines optoelektronischen bauteils und optoelektronisches bauteil |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US36446A (en) * | 1862-09-16 | Improvement in plow-beams | ||
FR2248663B1 (zh) * | 1972-12-13 | 1978-08-11 | Radiotechnique Compelec | |
US4034466A (en) * | 1974-09-03 | 1977-07-12 | Motorola, Inc. | Package and method for a semiconductor radiant energy emitting device |
GB1557685A (en) * | 1976-02-02 | 1979-12-12 | Fairchild Camera Instr Co | Optically coupled isolator device |
DE3019239A1 (de) * | 1980-05-20 | 1981-11-26 | SIEMENS AG AAAAA, 1000 Berlin und 8000 München | Umhuellung fuer halbleiterbauelement |
JPS60262474A (ja) * | 1984-06-08 | 1985-12-25 | Toshiba Corp | 光半導体装置 |
JPS6254974A (ja) | 1985-09-04 | 1987-03-10 | Mitsubishi Electric Corp | 光結合半導体装置 |
US4890383A (en) | 1988-01-15 | 1990-01-02 | Simens Corporate Research & Support, Inc. | Method for producing displays and modular components |
US4843280A (en) | 1988-01-15 | 1989-06-27 | Siemens Corporate Research & Support, Inc. | A modular surface mount component for an electrical device or led's |
JPH0292927U (zh) * | 1989-01-11 | 1990-07-24 | ||
JPH0448674A (ja) * | 1990-06-14 | 1992-02-18 | Rohm Co Ltd | 半導体レーザ |
JPH0521458A (ja) | 1991-07-11 | 1993-01-29 | Nec Corp | 半導体装置およびその製造方法 |
JP2715792B2 (ja) * | 1992-02-13 | 1998-02-18 | 信越化学工業株式会社 | 光透過性エポキシ樹脂組成物及び光半導体装置 |
JPH065742A (ja) | 1992-06-22 | 1994-01-14 | Mitsubishi Electric Corp | 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法 |
JP2809951B2 (ja) | 1992-12-17 | 1998-10-15 | 株式会社東芝 | 半導体発光装置とその製造方法 |
JP3420612B2 (ja) * | 1993-06-25 | 2003-06-30 | 株式会社東芝 | Ledランプ |
JPH0745641A (ja) * | 1993-07-30 | 1995-02-14 | Matsushita Electric Works Ltd | 半導体装置の実装方法 |
JP3648756B2 (ja) * | 1994-03-22 | 2005-05-18 | Jsr株式会社 | 半導体素子用コーテイング材 |
JPH07278438A (ja) * | 1994-04-14 | 1995-10-24 | Toray Dow Corning Silicone Co Ltd | 電子部品含浸用硬化性オルガノポリシロキサン組成物および電子部品 |
US5489800A (en) | 1994-08-31 | 1996-02-06 | Motorola, Inc. | Dual channel small outline optocoupler package and method thereof |
US5832600A (en) | 1995-06-06 | 1998-11-10 | Seiko Epson Corporation | Method of mounting electronic parts |
JPH08335720A (ja) * | 1995-06-08 | 1996-12-17 | Nichia Chem Ind Ltd | 窒化物半導体発光ダイオード |
JP3393247B2 (ja) | 1995-09-29 | 2003-04-07 | ソニー株式会社 | 光学装置およびその製造方法 |
US5748161A (en) * | 1996-03-04 | 1998-05-05 | Motorola, Inc. | Integrated electro-optical package with independent menu bar |
JP3034363U (ja) * | 1996-05-01 | 1997-02-18 | 武雄 稲垣 | 発光素子を内蔵した表示灯 |
DE19621124A1 (de) * | 1996-05-24 | 1997-11-27 | Siemens Ag | Optoelektronischer Wandler und dessen Herstellungsverfahren |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JP4316019B2 (ja) | 1996-10-01 | 2009-08-19 | 株式会社東芝 | 半導体装置及び半導体装置製造方法 |
JP3673621B2 (ja) * | 1997-07-30 | 2005-07-20 | ローム株式会社 | チップ型発光素子 |
US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
US6274890B1 (en) | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
JP3492178B2 (ja) * | 1997-01-15 | 2004-02-03 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
EP0921577A4 (en) * | 1997-01-31 | 2007-10-31 | Matsushita Electric Ind Co Ltd | ELECTROLUMINESCENT ELEMENT, SEMICONDUCTOR ELECTROLUMINESCENT DEVICE, AND PROCESS FOR PRODUCING THE SAME |
JPH10247748A (ja) * | 1997-03-03 | 1998-09-14 | Omron Corp | 発光素子及び当該発光素子を用いた面光源装置 |
KR100298880B1 (ko) * | 1997-05-01 | 2001-10-26 | 송기선 | 광결합소자및그제조방법 |
JP3378465B2 (ja) | 1997-05-16 | 2003-02-17 | 株式会社東芝 | 発光装置 |
US6037400A (en) * | 1997-08-25 | 2000-03-14 | Hitachi Maxell, Ltd | Composition for prevention of electric wave in wide range and electric wave absorber coping with all directions using same |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
US6147367A (en) * | 1997-12-10 | 2000-11-14 | Industrial Technology Research Institute | Packaging design for light emitting diode |
JP3618551B2 (ja) * | 1998-06-30 | 2005-02-09 | 株式会社東芝 | 光半導体モジュール |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
JP4680334B2 (ja) * | 1999-01-13 | 2011-05-11 | 株式会社朝日ラバー | 発光装置 |
JP2000349348A (ja) * | 1999-03-31 | 2000-12-15 | Toyoda Gosei Co Ltd | 短波長ledランプユニット |
JP3690968B2 (ja) | 1999-06-30 | 2005-08-31 | 日亜化学工業株式会社 | 発光装置及びその形成方法 |
EP1113506A3 (en) | 1999-12-28 | 2005-03-16 | Toyoda Gosei Co., Ltd. | Light emitting diode |
WO2001069693A1 (fr) | 2000-03-17 | 2001-09-20 | Matsushita Electric Industrial Co., Ltd. | Dispositif semi-conducteur a emission de lumiere et dispositif a emission par la surface |
US6867542B1 (en) * | 2000-03-29 | 2005-03-15 | General Electric Company | Floating chip photonic device and method of manufacture |
-
2001
- 2001-04-09 JP JP2001110676A patent/JP2002314143A/ja active Pending
-
2002
- 2002-04-03 CN CNA200510127175XA patent/CN1797766A/zh active Pending
- 2002-04-03 CN CNB021186979A patent/CN1231980C/zh not_active Expired - Lifetime
- 2002-04-08 EP EP20020007367 patent/EP1249874A3/en not_active Withdrawn
- 2002-04-08 US US10/118,604 patent/US6747293B2/en not_active Expired - Lifetime
- 2002-04-08 KR KR1020020019014A patent/KR20020079516A/ko active IP Right Grant
-
2004
- 2004-03-08 US US10/795,839 patent/US20040217369A1/en not_active Abandoned
- 2004-09-24 KR KR10-2004-0077336A patent/KR100514609B1/ko active IP Right Grant
-
2005
- 2005-02-18 KR KR1020050013570A patent/KR20050039764A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US20040217369A1 (en) | 2004-11-04 |
KR100514609B1 (ko) | 2005-09-14 |
US20020190262A1 (en) | 2002-12-19 |
KR20050039764A (ko) | 2005-04-29 |
CN1797766A (zh) | 2006-07-05 |
KR20020079516A (ko) | 2002-10-19 |
KR20040091605A (ko) | 2004-10-28 |
JP2002314143A (ja) | 2002-10-25 |
CN1381906A (zh) | 2002-11-27 |
EP1249874A3 (en) | 2008-06-04 |
EP1249874A2 (en) | 2002-10-16 |
US6747293B2 (en) | 2004-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1231980C (zh) | 发光装置 | |
CN1249824C (zh) | 可变色膜构件 | |
CN1380703A (zh) | 发光装置 | |
CN1534355A (zh) | 发光装置用组件、发光装置、背侧光照射装置、显示装置 | |
CN1305960C (zh) | 光学半导体元件及适用的环氧树脂组合物及其制造方法 | |
CN1612369A (zh) | 发光元件收纳用封装、发光装置以及照明装置 | |
CN1759492A (zh) | 固体元件装置及其制造方法 | |
CN1672271A (zh) | 半导体发光元件及其制造方法、使用此的发光装置 | |
CN1609701A (zh) | 光源装置和投影仪 | |
CN1248320C (zh) | 白色发光元件 | |
CN1747192A (zh) | 发光装置 | |
CN1577909A (zh) | 发光器件 | |
CN1476640A (zh) | 发光装置及其制造方法 | |
CN1883057A (zh) | 发光装置 | |
CN1389085A (zh) | 有机el显示装置 | |
CN1492521A (zh) | 半导体器件和一种使用该半导体器件的光学器件 | |
CN1774821A (zh) | 发光器件 | |
CN1929706A (zh) | 有机电致发光装置及其制造方法、电子设备 | |
CN1967888A (zh) | 发光二极管安装基板 | |
CN1750256A (zh) | 半导体光器件、其制造方法、引线框以及电子设备 | |
CN101045860A (zh) | 氧氮化物荧光体及其制造方法以及使用该氧氮化物荧光体的发光装置 | |
CN1764707A (zh) | 发光膜、发光装置、发光膜的制造方法以及发光装置的制造方法 | |
CN1767180A (zh) | 固态光学器件 | |
CN1836133A (zh) | 面状光源装置及采用该装置的显示装置 | |
CN1977397A (zh) | 发光装置、照明、显示装置用背光单元以及显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180802 Address after: Tokyo, Japan Patentee after: Toshiba electronic components and storage plant Address before: Tokyo, Japan Patentee before: Toshiba Corp |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180921 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co.,Ltd. Address before: Tokyo, Japan Patentee before: Toshiba electronic components and storage plant |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20051214 |