KR100783251B1 - 양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법 - Google Patents
양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법 Download PDFInfo
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- KR100783251B1 KR100783251B1 KR1020060032318A KR20060032318A KR100783251B1 KR 100783251 B1 KR100783251 B1 KR 100783251B1 KR 1020060032318 A KR1020060032318 A KR 1020060032318A KR 20060032318 A KR20060032318 A KR 20060032318A KR 100783251 B1 KR100783251 B1 KR 100783251B1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
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Abstract
Description
Claims (13)
- 자외선을 방출하는 자외선 발광 다이오드 ;상기 자외선 발광 다이오드의 상면에 형성된 녹색 형광체와 청색 형광체를 포함하는 혼합 형광체 층; 및상기 혼합 형광체 층의 상면에 형성된 적색-발광 양자점 층을 포함하는 다층 구조의 백색 발광 다이오드.
- 제 1항에 있어서, 상기 녹색 형광체는 BaMgAl10O17:Eu,Mn, Zn2SiO4:Mn, (Zn,A)2SiO4:Mn (A는 알칼리 토금속), MgAlxOy:Mn (x = 1 내지 10의 정수, y = 1 내지 30의 정수), LaMgAlxOy:Tb(x = 1 내지 14의 정수, y = 8 내지 47의 정수), ReBO3:Tb (Re는 Sc, Y, La, Ce, 및 Gd로 이루어진 군에서 선택되는 희토류 원소임), 및 (Y,Gd)BO3:Tb로 이루어진 군으로부터 선택되는 1 종 이상인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드.
- 제 1항에 있어서, 상기 청색 형광체는 Sr(PO4)3Cl:Eu2+, ZnS:Ag,Cl, CaMgSi2O6:Eu, CaWO4:Pb, 및 Y2SiO5:Eu로 이루어진 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 다층 구조의 백색 발광 다이오드.
- 제 1항에 있어서, 상기 청색 형광체와 녹색 형광체의 질량비는 3:1인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드.
- 제 1항에 있어서, 상기 적색 양자점은 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe과 같은 II-VI족 화합물 반도체 나노결정, GaN, GaP, GaAs, InP, InAs와 같은 III-V족 화합물 반도체 나노결정 또는 상기 물질의 혼합물인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드.
- 제 1항에 있어서, 상기 적색 양자점 층은 두께가 3 mm 이하인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드.
- 자외선을 방출하는 자외선 LED 칩의 상면에 녹색과 청색을 발광하는 혼합 형 광체 층을 형성하는 단계; 및상기 혼합 형광체 층의 상면에 적색-발광 양자점 층을 형성하는 단계를 포함하는 다층 구조의 백색 발광 다이오드의 제조방법.
- 제 7항에 있어서, 상기 혼합 형광체 층은 녹색 형광체, 청색 형광체 및 유기 바인더를 포함하는 것을 특징으로 하는 다층 구조의 백색 발광 다이오드 제조방법.
- 제 7항에 있어서, 상기 형광체를 코팅하는 방법으로는 드롭 캐스팅(drop casting), 스핀 코팅(spin cating), 딥 코팅(dip coating), 분무 코팅(spray coating), 흐름 코팅(flow coating) 또는 스크린 인쇄(screen printing)인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드 제조방법.
- 제 7항에 있어서, 상기 혼합 형광체 층의 건조온도는 100~150℃인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드 제조방법.
- 제 8항에 있어서, 상기 청색 형광체 및 녹색 형광체와 유기 바인더의 질량비는 1:1~1:3인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드 제조방법.
- 제 7항에 있어서, 상기 적색-발광 양자점층은 적색-발광 양자점과 유기 바인더를 포함하는 것을 특징으로 하는 다층 구조의 백색 발광 다이오드 제조방법.
- 제 12항에 있어서, 상기 적색 양자점과 유기 바인더의 질량비는 1:10000인 것을 특징으로 하는 다층 구조의 백색 발광 다이오드 제조방법.
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US11/672,285 US8017972B2 (en) | 2006-04-10 | 2007-02-07 | Multilayered white light emitting diode using quantum dots and method of fabricating the same |
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US20070246734A1 (en) | 2007-10-25 |
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