JP5828155B2 - 蛍光体ナノ粒子配合物 - Google Patents
蛍光体ナノ粒子配合物 Download PDFInfo
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- JP5828155B2 JP5828155B2 JP2012550546A JP2012550546A JP5828155B2 JP 5828155 B2 JP5828155 B2 JP 5828155B2 JP 2012550546 A JP2012550546 A JP 2012550546A JP 2012550546 A JP2012550546 A JP 2012550546A JP 5828155 B2 JP5828155 B2 JP 5828155B2
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- rsnp
- phosphor
- snp
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- blend
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- C—CHEMISTRY; METALLURGY
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- C—CHEMISTRY; METALLURGY
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
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- Computer Hardware Design (AREA)
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- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Description
「コア材料」という語句は、コアが形成される半導体材料を指す。材料は、II−VI族、III−V族、IV−VI族、I−III−VI2族半導体、またはそれらの配合物でありうる。例えば、シード/コア材料は、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、GaAs、GaP、GaAs、GaSb、HgS、HgSe、HgTe、InAs、InP、InSb、AlAs、AlP、AlSb、Cu2S、Cu2Se、CuInS2、CuInSe2、Cu2(ZnSn)S4、Cu2(InGa)S4、それらの合金、及びそれらの混合物から選択されうる。
ここで、図2A及びBを参照する。図2A及びBは、CdSe/ZnSコア/シェル量子ドットナノ粒子を含む既知の層、並びに緑色発光するRSNP層(図1A)及びオレンジ色発光するRSNP層(図1B)を含む本発明の実施形態に従う2種類の層の吸収と発光の比較を示す。QD層と、450nmの励起波長に調整された吸収を有するRSNP層と、の吸収及び規格化された発光の間の比較である。緑色のRSNP層は、4×27nm(直径×長さ)の大きさを備え、半値幅(FWHM)が29nmである540nmの中心波長(CWL)またはピーク波長で発光するCdSe/CdSコア/シェルRSNPを含んでいた。オレンジ色のRSNP層は、5×40nmの大きさで、CWLが600nm、FWHMが28nmであるCdSe/CdS RSNPを含んでいた。オレンジ色及び緑色の発光層はともに、同じように準備され、共に厚さ190μm、直径42mmであった。
a)ARredは、455nmにおける吸収と、580から700nmの範囲の波長における最大吸収との比である。つまり、ARred=(Absorbance455nm/max(Absorbance580−700nm))である。
b)ARgreenは、455nmにおける吸収と、520から580nmの範囲の波長における最大吸収との比である。つまり、ARgreen=(Absorbance455nm/max(Absorbance520−580nm))である。
c)LC/Hostは、ホスト材料の重量で割った蛍光体―SNP混合物の重量を、パーセンテージで示したものである。
d)PL赤方偏移は、低いOD(<0.1)においてトルエン中で測定されたCWLと、蛍光体―SNP混合物に関して測定されたCWLとの間の、ナノメートル単位の差である。
e)好適な光学的及び機械的特性を有するシリコーンは、様々な商業的な供給者から選択することができる。
f)ポリマーは、定義において与えられたリストから選択することができる。
a)ARredは、455nmの吸収と、580から700nmの範囲の波長における最大吸収との比である。つまり、ARred=(Absorbance455nm/max(Absorbance580−700nm))である。
b)ARgreenは、455nmの吸収と、520から580nmの範囲の波長における最大吸収との比である。つまり、ARgreen=(Absorbance455nm/max(Absorbance520−580nm))。
c)ホストAは、ポリマーに関する定義に与えられたリストに加えて、シリカ、エポキシまたはクレイから選択できる。
d)蛍光体は、定義に与えられたリストから選択できる。
e)LC/HostBは、マトリックスホスト材料の重量で割った蛍光体―SNP混合物の重量を、パーセンテージで示したものである。
f)好適な光学的及び機械的特性を有するホスト材料は、様々な商業的供給者から選択できる。
g)PL赤方偏移は、低いOD(<0.1)においてトルエン中で測定されたCWLと、蛍光体―SNP混合物に関して測定されたCWLとの間の、ナノメートル単位の差である。
h)ポリマー中のSNPのパーセンテージが低い場合、ホストに対して高いパーセンテージの光変換材を用い、またその逆である。
まず、638nmで発光する35×5.6nmのCdSe/CdS RSNPが、非特許文献3に記載された手順に類似した手順を用いて準備された。0.5gのRTV615A(Momentive,22 Corporate Woods Boulevard, Albany, NY 12211 USA)を、0.15gのRTV615Bとともに10分間撹拌した。4.0mgのRSNPを0.4mlのトルエンに溶解した。615mgの黄色の蛍光体(BYW01A,PhosphorTech,351 Thornton Rd Ste.130,Lithia Springs,GA 30122,USA)を、RSNPの蛍光体に対する重量比を4/615、つまり約0.65%になるように提供した。撹拌中に、RSNP溶液をシリコーンRTV混合物に加えた。次いで、BYW01A蛍光体を加え、RSNP/蛍光体/シリコーン溶液を15分間撹拌した。次いで、気泡が残らなくなるまで、RSNP/蛍光体/シリコーン溶液を真空処理した。次いで、溶液をガラス基板上に注ぎ、520μmの厚さのスペーサを間に介して他のガラス基板を用いて挟み込んだ。次いで、混合された変換材料を、100℃のホットプレート上に一時間置くと、溶液は固体となった。最終的な膜の厚さは520μmであった。
例1に記載のように準備されたRSNPを、3%のローディング比(重量)でPVB内に埋め込み、細かく粉末化した。最終的な粉末の平均粒子の大きさは、15μmよりも小さかった。1.5gのRTV615A(Momentive,22 Corporate Woods Boulevard, Albany, NY 12211 USA)を、0.15gのRTV615Bと共に10分間撹拌した。撹拌中に、77mgのRSNP/PVB粉末をシリコーン混合物に加えた。345mgのイットリウム・アルミニウム・ガーネット蛍光体(BYW01A,PhosphorTech,351 Thornton Rd Ste.130,Lithia Springs,GA 30122,USA)を加え、溶液を15分間撹拌した。次いで、RSNP/蛍光体/シリコーンRTV溶液を、気泡が残らなくなるまで真空処理した。次いで、溶液を、ガラス基板上に注ぎ、他のガラス基板を用いて挟み込んだ。2つのガラス基板の間に250μmの厚さのスペーサを配置して、所望の厚さの膜を得た。次いで、サンドイッチ構造を100℃のホットプレート上に1時間置くと、溶液は固体となった。最終的な膜の厚さは、約250μmであった。図7は、455nmのLED上に堆積したときに上述した層によって提供される光学スペクトルを示す。光変換材料を塗布されたLEDの発光スペクトルのCIE色座標は、CIE xが0.35、CIE yが0.31であった。
302 625nmの発光を有する4.5×45nmのRSNPに関する発光スペクトル
304 628nmの発光を有する4.5×95nmのRSNPに関する発光スペクトル
500 発光デバイス
504 光学スペーサ層
506 ホスト変換層
508 封止層
510 透過光学素子
512、514 反射素子
Claims (15)
- a)蛍光体材料、及び
b)580から680nmの範囲に中心発光波長(CWL)を有する少なくとも1種類の半導体シード化ナノ粒子(SNP)材料、を備え、
前記材料の配合物が、
c)前記SNP材料がロッド型SNP(RSNP)を含み、前記蛍光体材料および前記RSNP材料が、455nmにおける光学吸収の580から700nmの範囲の光学吸収の最大値に対する吸収比(AR)が3.5:1より大きいように選択された量で混合され、
前記蛍光体材料が、希土類元素の発光中心を有する粒子を含むこと、
前記蛍光体材料がガーネット系蛍光体、ケイ酸系蛍光体、オルトケイ酸系蛍光体、チオガレート系蛍光体、硫化物系蛍光体及び窒化物系蛍光体から選択されること、及び
前記SNP材料がII−VI、III−V、IV−VI及びI−III−VI 2 半導体から選択される材料を含むこと、
の少なくとも1つによって前記材料の配合物が特徴づけられる、光変換に用いるための材料配合物。 - 前記選択された量が、前記RSNPと前記蛍光体材料の間の重量比が0.1%から10%の間であることを含む、請求項1に記載の材料配合物。
- 前記蛍光体及び前記RSNP材料を組み込むホスト材料をさらに備える、請求項1または2に記載の材料配合物。
- 前記ホスト材料が、シリコーン、エポキシまたはポリマーである、請求項3に記載の材料配合物。
- 前記ホスト材料に対する前記蛍光体―RSNP配合物の重量パーセンテージが、5から50%の範囲内にある、請求項3または4に記載の材料配合物。
- 前記RSNPが第1のホスト材料に封止され、前記材料配合物が前記封止されたRSNP及び前記蛍光体材料の混合物を含む、請求項1または2に記載の材料配合物。
- 前記封止されたRSNPと前記第1のホスト材料との間の重量パーセンテージが、0.5%から10%の間であることを特徴とする、請求項6に記載の材料配合物。
- 前記適切な量が、前記蛍光体に対する前記封止されたRSNPの重量比が1%から50%の間であることを含む、請求項6または7に記載の材料配合物。
- 前記蛍光体材料および前記封止されたRSNP材料を組み込む第2のホスト材料をさらに含む、請求項6から8のいずれか一項に記載の材料配合物。
- 前記第2のホスト材料がエポキシ、シリコーンまたはポリマーである、請求項9に記載の材料配合物。
- 前記第2のホスト材料に対する前記蛍光体―封止されたRSNP配合物の重量パーセンテージが、5から50%の範囲内である、請求項9または10に記載の材料配合物。
- 前記RSNP材料がII−VI、III−V、IV−VI及びI−III−VI2半導体から選択される材料を含み、前記ロッド型RSNPが、CdSe/CdS、CdSeS/CdS、ZnSe/CdS、ZnCdSe/CdS、CdSe/CdZnS、CdTe/CdS、InP/ZnSe、InP/CdS、InP/ZnS及びCuInS2/ZnSから選択される材料を有するコア/シェル構造、及びCdSe/CdS/ZnS、CdSe/CdZnS/ZnS、ZnSe/CdS/ZnS、InP/ZnSe/ZnS、InP/CdS/ZnS及びInP/CdZnS/ZnSから選択される材料を有するコア/ダブルシェル構造の構成のうち1つを有する、請求項1から11のいずれか一項に記載の材料配合物。
- 455nmにおける吸収率と520〜580nmの波長範囲における吸収の最大値との間で6:1より大きいARを有し、5nmよりも小さなフォトルミネセンス(PL)偏移を有することをさらなる特徴とし、前記PL偏移が、ODが0.1より小さいときにトルエン中のSNPについて測定されたCWLと変換層中で測定されたCWLとの間の差を表す、請求項1から5のいずれか一項に記載の材料配合物。
- 455nmにおける吸収率と520〜580nmの波長範囲における吸収の最大値との間で6:1より大きいARを有し、8nmよりも小さなフォトルミネセンス(PL)偏移を有することをさらなる特徴とし、前記PL偏移が、ODが0.1より小さいときにトルエン中で測定されたCWLと変換層中で測定されたCWLとの間の差を表す、請求項6から11のいずれか一項に記載の材料配合物。
- 請求項1から14のいずれか一項に記載の物質の配合物を備える、光変換層。
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CN102844403A (zh) | 2012-12-26 |
US20130032768A1 (en) | 2013-02-07 |
KR20180025982A (ko) | 2018-03-09 |
US9109163B2 (en) | 2015-08-18 |
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EP2528989B1 (en) | 2015-03-04 |
US20160289556A1 (en) | 2016-10-06 |
US9868901B2 (en) | 2018-01-16 |
US20130181234A2 (en) | 2013-07-18 |
JP5828154B2 (ja) | 2015-12-02 |
CN103108940B (zh) | 2015-11-25 |
WO2011092647A3 (en) | 2011-11-10 |
US20160013370A1 (en) | 2016-01-14 |
US10000699B2 (en) | 2018-06-19 |
US20130026506A1 (en) | 2013-01-31 |
CN103108940A (zh) | 2013-05-15 |
WO2011092647A2 (en) | 2011-08-04 |
WO2011092646A2 (en) | 2011-08-04 |
JP2013518166A (ja) | 2013-05-20 |
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