JP2006310771A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP2006310771A JP2006310771A JP2006025785A JP2006025785A JP2006310771A JP 2006310771 A JP2006310771 A JP 2006310771A JP 2006025785 A JP2006025785 A JP 2006025785A JP 2006025785 A JP2006025785 A JP 2006025785A JP 2006310771 A JP2006310771 A JP 2006310771A
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
【解決手段】 400nm以下の発光スペクトルを有する半導体発光素子2と、少なくとも半導体発光素子2の光取出し面を被覆する紫外線吸収層6と、少なくとも紫外線吸収層6で被覆された半導体発光素子2を封止する封止樹脂7とを具備する。
【選択図】 図1
Description
2 青色LEDチップ
3 黄色LEDチップ
4 マウント材
5a、5b Auワイア
6、46 紫外線吸収層
7 封止樹脂
8a、8b、10a、10b リード
9a、9b、19a、19b 電極
11 青色
12 黄色
13 白色
14 シアン色
15 赤色
22、23 基板
26 カップ部
28、48 紫外線吸収剤溶液
32 シアン色LEDチップ
33 赤色LEDチップ
91、92、93 半導体発光装置
Claims (5)
- 400nm以下の発光スペクトルを有する半導体発光素子と、
少なくとも前記半導体発光素子の光取出し面を被覆する紫外線吸収層と、
少なくとも前記紫外線吸収層で被覆された前記半導体発光素子を封止する封止樹脂と、
を備えることを特徴とする半導体発光装置。 - 400nm以下の発光スペクトルを有する第1の半導体発光素子と、
ピーク波長が550nm以上の第2の半導体発光素子と、
少なくとも前記第1の半導体発光素子の光取出し面を被覆する紫外線吸収層と、
前記紫外線吸収層で被覆された前記第1の半導体発光素子、及び前記第2の半導体発光素子を封止する封止樹脂と、
を備えることを特徴とする半導体発光装置。 - 前記第1及び第2の半導体発光素子のピーク波長は、いずれも可視領域であることを特徴とする請求項2に記載の半導体発光装置。
- 前記第1及び第2の半導体発光素子は、注入される電流が夫々独立して制御されることを特徴とする請求項2又は3に記載の半導体発光装置。
- 400nm以下の発光スペクトルを有する半導体発光素子と、
少なくとも前記半導体発光素子の光取出し面を被覆する紫外線遮蔽層と、
少なくとも前記紫外線遮蔽層で被覆された前記半導体発光素子を封止する封止樹脂と、
を備えることを特徴とする半導体発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006025785A JP2006310771A (ja) | 2005-03-30 | 2006-02-02 | 半導体発光装置 |
US11/392,764 US8164102B2 (en) | 2005-03-30 | 2006-03-30 | Semiconductor light emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005099116 | 2005-03-30 | ||
JP2006025785A JP2006310771A (ja) | 2005-03-30 | 2006-02-02 | 半導体発光装置 |
Publications (1)
Publication Number | Publication Date |
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JP2006310771A true JP2006310771A (ja) | 2006-11-09 |
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ID=37069255
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Application Number | Title | Priority Date | Filing Date |
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JP2006025785A Pending JP2006310771A (ja) | 2005-03-30 | 2006-02-02 | 半導体発光装置 |
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US (1) | US8164102B2 (ja) |
JP (1) | JP2006310771A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009099784A (ja) * | 2007-10-17 | 2009-05-07 | Nitto Denko Corp | 光半導体装置の製造方法 |
TWI502765B (zh) * | 2012-02-24 | 2015-10-01 | Phostek Inc | 發光二極體裝置 |
JP2015198119A (ja) * | 2014-03-31 | 2015-11-09 | シャープ株式会社 | 発光装置 |
JP2018018913A (ja) * | 2016-07-27 | 2018-02-01 | 株式会社ディスコ | ウエーハの加工方法及び発光デバイス |
WO2020136759A1 (ja) * | 2018-12-26 | 2020-07-02 | 日産自動車株式会社 | 半導体装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007165728A (ja) * | 2005-12-15 | 2007-06-28 | Toshiba Discrete Technology Kk | 発光装置及び可視光通信用照明装置 |
KR100771772B1 (ko) * | 2006-08-25 | 2007-10-30 | 삼성전기주식회사 | 백색 led 모듈 |
KR101562772B1 (ko) | 2008-03-31 | 2015-10-26 | 서울반도체 주식회사 | 백열등 색의 발광 디바이스 |
JP5340763B2 (ja) * | 2009-02-25 | 2013-11-13 | ローム株式会社 | Ledランプ |
JP2012142410A (ja) * | 2010-12-28 | 2012-07-26 | Rohm Co Ltd | 発光素子ユニットおよびその製造方法、発光素子パッケージならびに照明装置 |
KR20140140836A (ko) * | 2013-05-30 | 2014-12-10 | 엘지이노텍 주식회사 | 발광소자 패키지 |
DE102013105798A1 (de) | 2013-06-05 | 2014-12-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
CN103837917B (zh) * | 2014-02-24 | 2016-03-16 | 京东方科技集团股份有限公司 | 一种狭缝光栅、其制作方法、光栅结构及显示装置 |
JP6818006B2 (ja) | 2015-07-23 | 2021-01-20 | シグニファイ ホールディング ビー ヴィSignify Holding B.V. | 可視光を発するuv保護された光源を有する照明アセンブリ |
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JPH06326364A (ja) * | 1993-03-22 | 1994-11-25 | Sanyo Electric Co Ltd | 発光ダイオードランプ |
JPH11145519A (ja) * | 1997-09-02 | 1999-05-28 | Toshiba Corp | 半導体発光素子、半導体発光装置および画像表示装置 |
JP2001068734A (ja) * | 1999-08-25 | 2001-03-16 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
JP2002033523A (ja) * | 2000-07-18 | 2002-01-31 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
JP2002057376A (ja) * | 2000-05-31 | 2002-02-22 | Matsushita Electric Ind Co Ltd | Ledランプ |
JP2002299694A (ja) * | 2001-03-29 | 2002-10-11 | Mitsubishi Electric Lighting Corp | 照明用led光源デバイス及び照明器具 |
JP2003152229A (ja) * | 2001-11-16 | 2003-05-23 | Rohm Co Ltd | 半導体発光装置 |
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US5962971A (en) | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
JP2000294834A (ja) | 1999-04-09 | 2000-10-20 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP2000349345A (ja) | 1999-06-04 | 2000-12-15 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP2002050797A (ja) | 2000-07-31 | 2002-02-15 | Toshiba Corp | 半導体励起蛍光体発光装置およびその製造方法 |
MY145695A (en) * | 2001-01-24 | 2012-03-30 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
JP4116260B2 (ja) | 2001-02-23 | 2008-07-09 | 株式会社東芝 | 半導体発光装置 |
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2002252374A (ja) | 2002-01-31 | 2002-09-06 | Sanyo Electric Co Ltd | 発光ダイオードランプ |
JP4421192B2 (ja) | 2003-02-10 | 2010-02-24 | スタンレー電気株式会社 | 発光ダイオード用封止樹脂組成物及びそれを用いた表面実装型発光ダイオード |
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2006
- 2006-02-02 JP JP2006025785A patent/JP2006310771A/ja active Pending
- 2006-03-30 US US11/392,764 patent/US8164102B2/en active Active
Patent Citations (7)
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JPH06326364A (ja) * | 1993-03-22 | 1994-11-25 | Sanyo Electric Co Ltd | 発光ダイオードランプ |
JPH11145519A (ja) * | 1997-09-02 | 1999-05-28 | Toshiba Corp | 半導体発光素子、半導体発光装置および画像表示装置 |
JP2001068734A (ja) * | 1999-08-25 | 2001-03-16 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
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JP2003152229A (ja) * | 2001-11-16 | 2003-05-23 | Rohm Co Ltd | 半導体発光装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009099784A (ja) * | 2007-10-17 | 2009-05-07 | Nitto Denko Corp | 光半導体装置の製造方法 |
TWI502765B (zh) * | 2012-02-24 | 2015-10-01 | Phostek Inc | 發光二極體裝置 |
JP2015198119A (ja) * | 2014-03-31 | 2015-11-09 | シャープ株式会社 | 発光装置 |
JP2018018913A (ja) * | 2016-07-27 | 2018-02-01 | 株式会社ディスコ | ウエーハの加工方法及び発光デバイス |
WO2020136759A1 (ja) * | 2018-12-26 | 2020-07-02 | 日産自動車株式会社 | 半導体装置 |
US11462449B2 (en) | 2018-12-26 | 2022-10-04 | Nissan Motor Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
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US8164102B2 (en) | 2012-04-24 |
US20060220053A1 (en) | 2006-10-05 |
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