US20040217369A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- US20040217369A1 US20040217369A1 US10/795,839 US79583904A US2004217369A1 US 20040217369 A1 US20040217369 A1 US 20040217369A1 US 79583904 A US79583904 A US 79583904A US 2004217369 A1 US2004217369 A1 US 2004217369A1
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- United States
- Prior art keywords
- light emitting
- semiconductor
- emitting element
- emitting device
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 133
- 229920002050 silicone resin Polymers 0.000 claims description 114
- 229920005989 resin Polymers 0.000 claims description 88
- 239000011347 resin Substances 0.000 claims description 88
- 230000001681 protective effect Effects 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 10
- 230000001070 adhesive effect Effects 0.000 abstract description 10
- 238000001125 extrusion Methods 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 description 131
- 239000000463 material Substances 0.000 description 40
- 239000003822 epoxy resin Substances 0.000 description 30
- 229920000647 polyepoxide Polymers 0.000 description 30
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 21
- 238000010586 diagram Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 239000010931 gold Substances 0.000 description 12
- 239000003086 colorant Substances 0.000 description 11
- 239000000975 dye Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 238000004299 exfoliation Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 229920005992 thermoplastic resin Polymers 0.000 description 7
- 229910052693 Europium Inorganic materials 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000012552 review Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910052844 willemite Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- -1 alkyl radicals Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 210000004185 liver Anatomy 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 229910002226 La2O2 Inorganic materials 0.000 description 1
- 229910001477 LaPO4 Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000005840 aryl radicals Chemical class 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- GLNDAGDHSLMOKX-UHFFFAOYSA-N coumarin 120 Chemical compound C1=C(N)C=CC2=C1OC(=O)C=C2C GLNDAGDHSLMOKX-UHFFFAOYSA-N 0.000 description 1
- VSSSHNJONFTXHS-UHFFFAOYSA-N coumarin 153 Chemical compound C12=C3CCCN2CCCC1=CC1=C3OC(=O)C=C1C(F)(F)F VSSSHNJONFTXHS-UHFFFAOYSA-N 0.000 description 1
- AFYCEAFSNDLKSX-UHFFFAOYSA-N coumarin 460 Chemical compound CC1=CC(=O)OC2=CC(N(CC)CC)=CC=C21 AFYCEAFSNDLKSX-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C15/00—Details
- F24C15/20—Removing cooking fumes
- F24C15/2071—Removing cooking fumes mounting of cooking hood
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Definitions
- This invention relates to a light emitting device, in particular, having an excellent emission property and a high reliability.
- LEDs light emitting diodes
- fluorescent elements have been remarked as inexpensive, long-lived light emitting devices, and are widely used as various kinds of indicators, light sources, flat-type display devices, backlight of liquid crystal displays, and so forth.
- FIGS. 37A and 37B show such a typical conventional light emitting device.
- FIG. 37A is a plan view showing a configuration of the substantially part thereof, and
- FIG. 37B is a cross-sectional view thereof.
- the light emitting device shown here is of a so-called “surface mounting” type, including a package (resin stem) 800 , semiconductor light emitting element 802 and sealing element 804 of a resin.
- the resin stem 800 has a structure molding a pair of leads 805 , 806 shaped from lead frames with a resin portion 803 of a thermoplastic resin.
- the resin portion 803 has an opening 801 , and the semiconductor light emitting element 802 is place therein. Then the semiconductor light emitting element 802 is sealed with an epoxy resin 804 .
- the semiconductor light emitting element 802 is mounted on the lead 806 .
- An electrode (not shown) of the semiconductor light emitting element 802 and the lead 805 are connected to each other by a wire 809 .
- the semiconductor light emitting element 802 emits light, and the light is extracted from an emission surface 812 via the epoxy resin 804 .
- the light emitting device shown in FIGS. 37A and 37B certainly meets the requirements currently in force, i.e., 100 cycles as the current level of temperature cycle tests requested for ordinary civilian uses, and 300 cycles for car-borne uses. However, for further improvement of the reliability toward the future uses, essential review is required.
- Those having two or more semiconductor elements different in emission wavelength can provide mixed color, thereby to diversify the color representation.
- two complementary colors can produce white light.
- the light emitting device shown in FIGS. 37A and 37B cannot provide a sufficient space for mounting the chip and for bonding the wire as well. If two chips are packed in the narrow opening by force, the optical axis of the light emitting element will largely offset from the center of the opening, and the intensity profile of the emitted light, i.e., luminous intensity property, will become a symmetrical. Then, the light emitting device cannot provide a uniform emission pattern required in applications such as the back light of a liquid crystal display.
- FIG. 39 is a schematic diagram showing a plan-viewed configuration of a light emitting device prepared by the Inventor for trial toward the present invention.
- the light emitting device shown here has an approximately rectangular opening 901 formed in a resin portion 903 , and chips 902 A, 902 B mounted on opposed leads 905 , 906 , respectively, at the bottom of the opening 901 .
- Wires 909 A, 909 B extending from the chips 902 A, 902 B are connected to the opposed leads 906 , 905 , respectively.
- the fist problem is that a part of an adhesive extruding out upon mounting the chips 902 A, 902 B causes insufficient bonding of the wires 909 A, 909 B.
- pastes such as silver paste or solders such as gold-tin (AuSn) or gold-germanium (AuGe) solder is usually used.
- the second problem lies in that the illustrated rectangular shape of the opening 901 causes side walls of the resin portion 903 to be uniformly thin, and makes the mechanical strength insufficient. This problem becomes serious especially when a soft resin is used as the sealing element buried in the opening.
- a silicone resin used as the sealing element is advantageous for reducing the residual stress and thereby reducing cracks of the sealing element and breakage of the wire.
- the relatively soft silicone resin often fails to prevent an external lateral force to act on the chip and the wire. For example, upon picking up the light emitting device by grasping from its side surfaces for assembly and a test, the force actually acted upon the chip and the wire, and often deformed the wire.
- the third problem is that the illustrated rectangular shape of the opening 901 need a larger quantity of resin buried therein, and sometimes increases the resin stress.
- the resin filled in the opening 901 produces a stress upon curing, or thereafter upon an increase of decrease of the temperature.
- the degree of the stress depends on the buried quantity of the resin, and tends to increase as the buried quantity increases. Moreover, as already explained with reference to FIG. 38, epoxy resins exhibit a large stress.
- the sealing resin filled in the illustrated rectangular opening 901 produced a large stress, and is liable to cause exfoliation of the chips 902 A, 902 B, and deformation or breakage of the wires 909 A, 909 B.
- a light emitting device comprising: a resin portion having an opening, said opening having an approximately elliptical or elongate-circular opening shape;
- a first semiconductor light emitting element disposed inside said opening; a semiconductor element disposed inside said opening; and a silicone resin provided inside said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value.
- another light emitting device comprising: a lead; a resin portion embedding at least a part of said lead;
- a semiconductor element mounted on said lead in said opening; a wire connecting said first semiconductor light emitting element and said lead; and a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value, said lead having a slit formed therein between a portion where said first semiconductor light emitting element is mounted and a portion where said wire is connected.
- another light emitting device comprising: a first lead; a second lead; a resin portion embedding at least a part of said first and second leads; a first semiconductor light emitting element mounted on said first lead in an opening formed in said resin portion; a semiconductor element mounted on said second lead in said opening; a first wire connecting said first semiconductor light emitting element and said second lead; a second wire connecting said semiconductor element and said first lead; and a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value, said first lead having a first slit formed therein between a portion where said first semiconductor light emitting element is mounted and a portion where said second wire is connected, said second lead having a second slit formed therein between a portion where said semiconductor element is mounted and a portion where said first wire is connected.
- another light emitting device comprising: a first lead; a second lead; a resin portion embedding at least a part of said first and second leads; a first semiconductor light emitting element mounted on said first lead in an opening formed in said resin portion; a semiconductor element mounted on said first lead in said opening; a first wire connecting said first semiconductor light emitting element and said second lead; a second wire connecting said semiconductor element and said second lead; and a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value, said opening having a substantially elliptical or elongate-circular opening shape,said first semiconductor light emitting element and said semiconductor element being arranged along a longer axis or a shorter axis of said elliptical or elongate-circular opening.
- another light emitting device comprising: a semiconductor element; a first semiconductor light emitting element mounted on said semiconductor element by a metal bump;
- a silicone resin provided to enclose said semiconductor element and said first semiconductor light emitting element, said silicone resin having a hardness not lower than 50 in JISA value.
- another light emitting device comprising: a semiconductor light emitting element; a silicone resin provided to enclose said semiconductor light emitting element, said silicone resin having a hardness not lower than 50 in JISA value; and a fluorescent element which is included in said silicone resin, absorbs light emitted from said semiconductor light emitting element and releases light of a peak wavelength different from said light from said semiconductor light emitting element.
- the “elongate-circle” means a shape connecting a pair of curved portions by a pair of substantially straight portions.
- the curved portions may be either regularly arc-shaped or irregularly arc-shaped.
- silicon resin any resin having as its skeleton a structure in which silicon atoms having organic radicals such as alkyl radicals or aryl radicals are alternately connected to oxygen atoms. Needless to say, those containing additive elements added to such skeletons are also included in “silicone resins”.
- the “fluorescent element” may be any having a wavelength converting function, either inorganic or organic, including inorganic dyes having a wavelength converting function.
- FIGS. 1A and 1B show schematic diagrams illustrating a configuration of the substantial part of a light emitting device according to the first embodiment of the invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along the A-A line of FIG. 1A;
- FIG. 2 is a cross-sectional view that schematically shows the second specific example regarding a sealing element 111 in the light emitting device according to the first embodiment
- FIG. 3 is a cross-sectional view that schematically shows the third specific example of the light emitting device according to the first embodiment
- FIG. 4 is a cross-sectional view that schematically shows the fourth specific example of the light emitting device according to the first embodiment
- FIG. 5 is a plan view that schematically shows the fifth specific example of the light emitting device according to the first embodiment
- FIG. 6 is a cross-sectional view that schematically shows the structure of a semiconductor light emitting element usable in the configuration shown in FIGS. 1A and 1B or FIG. 5;
- FIG. 7 is a plan view that schematically shows the sixth specific example of the light emitting device according to the first embodiment
- FIG. 8 is a cross-sectional view that shows a structure of the semiconductor light emitting element 106 D;
- FIG. 9 is a plan view that schematically shows the seventh specific example of the light emitting device according to the first embodiment
- FIG. 10 is a plan view that schematically shows the eighth specific example of the light emitting device according to the first embodiment
- FIG. 11 is a plan view that schematically shows the ninth specific example of the light emitting device according to the first embodiment
- FIG. 12 is a plan view that schematically shows the tenth specific example of the light emitting device according to the first embodiment
- FIG. 13 is a plan view that schematically shows the eleventh specific example of the light emitting device according to the first embodiment
- FIG. 14 is a plan view that schematically shows the twelfth specific example of in the light emitting device according to the first embodiment
- FIG. 15 is a plan view that schematically shows the thirteenth specific example of the light emitting device according to the first embodiment
- FIG. 16 is a plan view that schematically shows the fourteenth specific example of the light emitting device according to the first embodiment
- FIG. 17 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to the second embodiment of the invention.
- FIG. 18A is a cross-sectional view that shows a chip portion of the light emitting device according to the second embodiment in an enlarged scale
- FIG. 18B is a circuit diagram of an equivalent circuit of the light emitting device according to the second embodiment.
- FIG. 19 is a cross-sectional view that schematically shows the second specific example regarding the sealing element 111 in the light emitting device according to the second embodiment
- FIG. 20 is a cross-sectional view that schematically shows the third specific example regarding the sealing element 111 in the light emitting device according to the second embodiment
- FIG. 21 is a cross-sectional view that schematically shows the fourth specific example regarding the sealing element 111 in the light emitting device according to the second embodiment
- FIG. 22 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to the third embodiment of the invention.
- FIGS. 23A through 23C show diagrams that schematically show intensity profiles of emitted light depending on the surface configuration of the sealing element, in which FIG. 23A shows the intensity profile P of light from the light emitting element using a sealing element 111 having a flat surface configuration, FIG. 23B shows that with a sealing element 111 having a concave surface configuration, and FIG. 23C shows that with a sealing element 111 having a convex surface configuration;
- FIG. 24 is a graph that shows measured changes of chromaticity x with current-supply time
- FIG. 25 is a diagram corresponding to FIG. 2, in which, however, the sealing element 111 contains a fluorescent element 110 ;
- FIG. 26 is a diagram corresponding to FIG. 3, in which, however, the sealing element 111 contains a fluorescent element 110 ;
- FIG. 27 is a diagram corresponding to FIG. 4, in which, however, the sealing element 111 contains a fluorescent element 110 ;
- FIG. 28 is a diagram corresponding to FIG. 17, in which, however, the sealing element 111 contains a fluorescent element 110 ;
- FIG. 29 is a diagram corresponding to FIG. 19, in which, however, the sealing element 111 contains a fluorescent element 110 ;
- FIG. 30 is a diagram corresponding to FIG. 20, in which, however, the sealing element 111 contains a fluorescent element 110 ;
- FIG. 31 is a diagram corresponding to FIG. 21, in which, however, the sealing element 111 contains a fluorescent element 110 ;
- FIG. 32 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device as a specific example according to the third embodiment of the invention.
- FIG. 33 is a cross-sectional view that shows a light emitting device having an approximately hemispherical sealing element 111 and a resin stem 100 including a resin portion 103 configured to bury leads 101 , 102 and surround them with a low side wall;
- FIG. 34 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device as a specific example according to the third embodiment of the invention.
- FIG. 35 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device as a specific example according to the third embodiment of the invention.
- FIG. 36 is a cross-sectional view that shows a light emitting device in which the sealing element 111 containing the fluorescent element 110 is provided only in and on a cup portion 601 ;
- FIGS. 37A and 37B show schematic diagrams of a typical conventional light emitting device, in which FIG. 37A is a plan view illustrating its substantial part, and FIG. 37B is a cross-sectional view thereof;
- FIG. 38 is a schematic diagram that shows ho cracks C are produced in an epoxy resin 804 and how exfoliation occurs at the interface I with the resin stem 800 ;
- FIG. 39 is a schematic diagram that shows a plan-viewed configuration of a light emitting device prepared by the Inventor in trials toward the present invention.
- FIGS. 1A and 1B show schematic diagrams illustrating a configuration of the substantial part of a light emitting device according to the first embodiment of the invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along the A-A line of FIG. 1A.
- the light emitting device 1 A shown here includes a resin stem 100 , a semiconductor light emitting element 106 A mounted on the resin stem 100 , a protective Zener diode 106 B and a sealing element 111 provided to embed them.
- the resin stem 100 includes leads 101 , 102 shaped from a lead frame, and a resin portion 103 molded integrally with the leads 101 , 102 .
- the resin portion 103 is typically made of a thermoplastic resin preferably, for example, of a nylon system having inert coupling radicals.
- the thermoplastic resin may be a resin having a high resistance to heat, such as liquid crystal polymer (LCP), polyphenylene sulfide (PPS: thermoplastic resin) or syndiotactic polystyrene (SPS: crystalline polystyrene).
- LCP liquid crystal polymer
- PPS polyphenylene sulfide
- SPS syndiotactic polystyrene
- the plan-viewed outer configuration of the resin portion 103 may be a substantial square approximately sized 2.0 ⁇ 2.0 mm through 6.0 ⁇ 6.0 mm, or a substantial rectangular approximately sized 2.0 ⁇ 3.0 mm through 5.0 ⁇ 7.0 mm.
- the leads 101 , 102 have opposed ends close to each other, and extend therefrom in the opposite directions to outside the resin portion 103 .
- the resin portion 103 has formed an opening 105 , and the semiconductor light emitting element 106 A and the diode 106 B are mounted at the bottom of the opening 105 .
- the plan-viewed shape of the opening 105 is approximately elliptical or approximately elongate-circular as illustrated.
- the inner wall surface of the resin portion 103 surrounding the elements 106 A, 106 B inclines to face toward the light extraction direction to function as a reflective surface 104 for reflecting light.
- the light emitting device shown in FIGS. 1A and 1B is characterized in (1) the material of the sealing element 111 , (2) shape of the opening 105 and (3) layout of the leads and the chips in the opening 105 .
- the invention uses a silicone resin instead of a conventional epoxy resin as the sealing element 111 filling the opening 105 .
- silicone resins are less fragile and less subjected to cracks.
- Silicone resins usable in the present invention exhibit a high bonding force with the resin portion 103 made of a thermoplastic resin, for example, and a high moisture resistance. Additionally, they do not crack or exfoliate so much due to a temperature stress. Furthermore, such a silicone resin filled in the opening produces only a remarkably small resin stress to the light emitting element 106 A and the Au wire 109 .
- silicone resins are more resistance to light irradiated from the light emitting element 106 A than epoxy resins.
- Rubber-like silicone resins have a JISA hardness in the range of approximately 50 to 90.
- Epoxy resins widely used as the sealing element materials in conventional light emitting devices have a JISA hardness around 95.
- the sealing element 111 may be deformed by the pressing force from the vacuum collet, which in turn may deform the wires 109 A, 109 B or give a stress to the light emitting element 106 A (and/or diode 106 B).
- rubber-like silicone resins having a JISA hardness in the range of 50 to 90 are prevented from deformation by a selector or an assembler used for selecting or assembling light emitting devices.
- a technique for increasing the hardness of a silicone resin is to add an agent for giving a thixotropy index.
- a silicone resin Upon burying a silicone resin, it is poured into the opening 105 of the resin stem through a thin nozzle, and thereafter cured. In this process, it is preferable to use a silicone resin having a pre-curing viscosity around 100 cp through 10000 cp. Thereby, it is possible to fully bury the opening including narrow spaces and to limit the residual stress upon curing within a sufficiently low range, without giving an excessive stress to the light emitting element 106 A (diode 109 B) and the wire 109 A ( 109 B).
- the Inventor prepared light emitting devices according to the embodiment as shown in FIGS. 1A and 1B by using a rubber-like silicone resin having the pre-during viscosity of 1000 cp and post-curing JISA hardness value of 70, and carried out a temperature cycle test in the temperature range from ⁇ 40° C. to 110° C.
- a temperature cycle test in the temperature range from ⁇ 40° C. to 110° C.
- the Inventor also prepared light emitting devices using epoxy resins, and carried similar evaluation. As a result, epoxy resins cracked near 700 cycles. In this manner, the devices using silicone resins have been confirmed to be greatly improved in reliability as compared to those using epoxy resins.
- the Inventor also carried out quantitative analysis of the stress applied to the semiconductor light emitting element with devices using silicone resins and devices using epoxy resins, respectively.
- Light emitting devices taken for the analysis were prepared by forming a 0.9 mm deep, 2.4 mm diameter, circular opening in the resin portion 103 of the package, mounting a semiconductor light emitting element 106 at the bottom of the opening, and burying a silicone resin of the JISA hardness of 70.
- Devices as comparative examples were prepared by burying an epoxy resin in the similar structure. In both types of light emitting devices, the semiconductor light emitting element had the size of 200 ⁇ 200 ⁇ m and the thickness of 150 ⁇ m.
- the temperature of 240° C. is the peak temperature that may be applied when the light emitting device is fixed to a packaging substrate, for example, by reflow of a solder. As shown, when the light emitting device is heated, a stress corresponding to the thermal expansion of the resin is applied to the light emitting element.
- the stress level of 3.5 ⁇ 10 ⁇ 6 produced in the epoxy resin is the level where breakage of wire will occur before 1000 cycles approximately in the temperature cycle test in the temperature range of ⁇ 40° C. to 110° C., according to the statistics of the reliability test carried out by the Inventor.
- the stress applied to the light emitting element is about a half the stress given by the epoxy resin.
- Such a small stress is assumed to be the reason of realizing the remarkably high reliability by eliminating cracks of the resin, exfoliation of the light emitting element, deformation or breakage of wires, and absolutely eliminating malfunctions even in the temperature cycle of 1500 cycles.
- silicone resin also improves the durability against light emitted from the semiconductor light emitting element 106 or light intruding from the exterior of the light emitting device. Epoxy resins change in color when exposed to light, and even if it is initially transparent, its optical transmittance decreases after long-time use.
- silicone resin leads to a very satisfactory result. That is, if a silicone resin is used, change or color and other types of deterioration do not occur even after it is exposed to short wavelength light such as ultraviolet rays. Therefore, silicone resins contribute to realization of light emitting devices exhibiting excellent resistance to light and weather.
- the resin portion 103 may be equipped with optical reflectivity.
- the resin portion 103 may be made of 65 or more weight % of a thermoplastic resin and 35 or less weight % of a filling agent.
- the filling agent contains a high-reflective material such as titanium oxide (TiO 3 ), silicon oxide, aluminum oxide, silica or alumina. In case of titanium oxide, its content is in the range from 10 to 15%.
- TiO 3 titanium oxide
- the reflective surface 104 is a part of the resin portion containing a diffusing material that reflects light, it can reflect light from the light emitting element 106 and the fluorescent element 110 upward to realize a high luminance of the light emitting device. If the reflective surface 104 is configured as a paraboloid of revolution, for example, the output and the quality of the light emitting device can be further improved.
- the sealing element 111 of a silicone resin may also contain such a diffusing material diffused therein to expand the luminous distribution property broader.
- the opening 105 is approximately elliptical.
- the lead 101 and the lead 102 are isolated. Near the distal end of the lead 101 , a slit 101 G is formed to divide it into the regions 101 A and 101 B. Similarly, near the distal end of the lead 102 , a slit 102 G is formed to divide it into the regions 102 A and 102 B.
- the light emitting element 106 A is mounted in the region 101 A with an adhesive such as silver (Ag) paste.
- the light emitting element 106 B is mounted in the region 102 B similarly with an adhesive 107 such as silver (Ag) paste.
- the wire 109 A is connected to the opposed region 102 A.
- the wire 109 B is connected to the opposed region 101 B.
- the slits 101 G, 102 G formed near distal ends of the leads 101 , 102 separate each of them into the portion ( 101 A, 102 B) for mounting the chips 106 A, 106 B and the portion ( 101 B, 102 A) for bonding the wires 109 A, 109 B.
- This configuration keeps the portion for bonding the wire clean even when silver paste, for example, extrudes upon mounting the chip, and thereby eliminates defective bonding of wires.
- the invention employs a shape with a longer diameter and a shorter diameter such as an approximately elliptical shape or an approximately elongate-circular shape as the shape of the opening in lieu of an approximately circular shape as shown by a broken line in FIG. 1A, which has been used conventionally, it is possible to effectively increase the area of the opening 105 and thereby make an ample space for mounting two or more chips and bonding the wires.
- the approximately elliptical or elongate-circular shape of the opening according to the invention makes it easy to locate the light emitting element closest to the center of the opening.
- the use of the approximately elliptical or elongate-circular shape of the opening according to the invention also enables the corner portions 103 C to be made thicker. As a result, the light emitting device maintains a sufficient mechanical strength, and it is prevented from deformation or wires and other kinds of damage even upon application of a lateral force during assembly or tests.
- the approximately elliptical or elongate-circular shape of the opening prevents an increase of the resin quantity filled inside and thereby prevents the resin stress.
- the resin stress increases as the quantity of resin filled as the sealing element 111 increases.
- the invention minimizes the increase of the resin quantity and simultaneously keeps an ample space for locating a plurality of chips. It results in eliminating the problems of exfoliation of chips, deformation or breakage of wires due to an increase of the resin stress. This effect is obtained as an additional effect by the use of a silicone resin as the sealing element 111 .
- the invention enables mounting of a plurality of chips while maintaining the outer dimension of the light emitting device compact. Therefore, by connecting the protective diode 106 B in a parallel, opposite direction from the light emitting element 106 A as illustrated, the invention can improve the reliability. In addition, by combining light emitting elements different in emission wavelength, the device can realize emission of white and other various colors, which has been difficult to emit conventionally.
- the slits 101 G, 102 G formed in the leads 101 , 102 facilitate corners of the lead patterns to be cognized inside the opening in the process of mounting chips or bonding wires. Therefore, the invention ensures more accurate mounting positions of the chips and more accurate bonding positions of the wires than conventional techniques.
- FIG. 2 is a cross-sectional view that schematically shows the second specific example regarding a sealing element 111 in the light emitting device according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A and 1B are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device 1 B shown here also includes a resin stem 100 , semiconductor light emitting element 106 mounted thereon, and sealing element 111 of a silicone resin provided to embed the element 106 .
- the sealing element 111 merely embeds the light emitting element 106 , and a second sealing element 213 of a transparent resin is provided outside the sealing element 111 .
- the second sealing element 213 may be made of an epoxy resin, silicone resin or any of other various materials.
- the second sealing element 213 may be colored, and any material adaptable to the dye or coloring agent used can be selected.
- the second sealing element 213 may contain a diffusing material dispersed therein to scatter light. In this case, light can be diffused, and broader light distribution characteristics can be obtained.
- the sealing element 111 made of a silicone resin wraps the entirety of the Au wire 109 . Therefore, a reliable light emitting element free from breakage of wire due to a resin stress can be realized. If the wire partly projects into the second sealing element 213 , it will readily break due to a stress produced at the interface between the sealing elements 111 , 213 . In this specific example, however, since the wire 109 is entirely embedded by the sealing element 111 , it is free from breakage.
- FIG. 3 is a cross-sectional view that schematically shows the third specific example regarding the sealing element 111 in the light emitting device according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A, 1B and 2 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device 1 C shown here also includes a resin stem 100 , semiconductor light emitting element 106 mounted thereon, and sealing element 111 provided to embed the element 106 .
- the sealing element 111 merely embeds the light emitting element 106 . In this specific example, however, the space outside the sealing element 111 remains open, without being filled by any other sealing element.
- the limitative use of the sealing element 111 only to enclose the light emitting element 106 mounted at the bottom of the opening 105 contributes to small-sizing the emitting portion. Therefore, the luminance increases, and the function of the reflective surface 104 to gather rays of light is enhanced.
- the sealing element 111 embeds the entirety of the Au wires 108 , 109 , it prevents breakage of wire by a resin stress, and ensures a high reliability.
- FIG. 4 is a cross-sectional view that schematically shows the fourth specific example regarding the sealing element 111 in the light emitting device according to the first embodiment.
- the light emitting device 1 D shown here also includes a resin stem 100 , semiconductor light emitting element 106 mounted thereon, and sealing element 111 embedding the element 106 .
- the embodiment shown here includes a convex transparent element 413 is provided on the sealing element 111 to ensure the function of gathering rays of light.
- the transparent element 413 may be made of a resin, for example.
- a silicone resin is advantageous for decreasing the difference of the refractive index from the sealing element 111 and to reduce the loss by reflection at the interface with the sealing element 111 .
- the convex shape of the transparent element 413 is not limited to a spherical shape. Any appropriate shape can be selected depending on the required converging ratio or luminous intensity profile.
- FIG. 5 is a plan view that schematically shows the fifth specific example regarding the sealing element 111 in the light emitting device according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 4 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here includes two semiconductor light emitting elements 106 , 106 C on board.
- elements 106 A, 106 C reversed in conduction type may be used. That is, one of them may be configured n-side down while the other p-side down.
- the light emitting device can provide light of a mixed color.
- white light can be realized by combining, for example, a blue light emitting element and a yellow light emitting element that are chromatically complementary.
- White light can be obtained also by combining a red light emitting element and a blue-green light emitting element.
- FIG. 6 is a cross-sectional view that schematically shows the structure of a semiconductor light emitting element usable in the configuration shown in FIGS. 1A and 1B or FIG. 5. This structure is briefly explained here.
- the light emitting element 106 A (or 106 C) includes a buffer layer 122 , n-type contact layer 123 , light emitting layer 124 , p-type cladding layer 125 and p-type contact layer 126 sequentially stacked on a conductive substrate 121 .
- the light emitting layer 124 may have a quantum well (QW) structure in which barrier layers and well layers are stacked alternately.
- QW quantum well
- the conductive substrate 121 may be made of, for example, an n-type semiconductor. Respective layers on the substrate may be made of, for example, III-V compound semiconductors, II-IV compound semiconductors, IV-VI compound semiconductors and other various materials.
- n-side electrode 127 is provided on the rear surface of the substrate 121 .
- Surface of the element is covered by a protective film 130 of SiO 2 .
- the embodiment shown here can realize various emission colors by using such semiconductor light emitting elements.
- FIG. 7 is a plan view that schematically shows the sixth specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 5 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here includes a protective diode 106 B and a semiconductor light emitting element 106 D.
- the light emitting element 106 D is formed on an insulating substrate, and includes p-side and n-side electrodes (not shown) on the front surface. Wires 109 B, 109 C extending from these electrodes are connected to the leads 101 B, 102 B, respectively.
- the protective diode 106 B and the light emitting element 106 D are connected in the opposite directions in parallel.
- FIG. 8 is a cross-sectional view that shows a structure of the semiconductor light emitting element 106 D.
- the device shown here is made by stacking semiconductor layers on an insulating substrate 133 . More specifically, sequentially stacked on the insulating substrate 133 are a buffer layer 122 , n-type contact layer 123 , light emitting layer 124 , p-type cladding layer 125 and p-type contact layer 126 .
- the light emitting layer 124 may have a quantum well (QW) structure in which barrier layers and well layers are stacked alternately.
- QW quantum well
- an n-side electrode 127 is formed on the n-type contact layer 123 exposed by selectively removing the multi-layered structure from its surface by etching.
- an n-side electrode 127 is formed on the p-type contact layer 126 .
- Surface of the element is covered by a protective film 130 of SiO 2 .
- the specific example shown in FIG. 7 can compactly accommodate both the semiconductor light emitting element 106 D formed on the insulating substrate and the protective diode 106 B in a limited space, and can reliably, easily bond the predetermined wires 109 A through 109 C. Moreover, since the chips and the wire bonding portion are isolated by the slits 101 G, 102 G, defective bonding by extrusion of the adhesive can be eliminated.
- FIG. 9 is a plan view that schematically shows the seventh specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 7 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here also includes the protective diode 106 B and the semiconductor light emitting element 106 D.
- the opening 105 is not elliptical but approximately elongate-circular.
- the “elongate circle” means a shape, like that of the opening 105 shown in FIG. 9, having a pair of opposed approximately arc-curved portions and connecting these curved portions by substantially straight portions.
- the curved portions need not be strictly arc-shaped. That is, the “approximately elongate-circle” pertains to a shape made up of a pair of curved portions connected by two substantially straight portions.
- the approximately elongate circle is advantageous for easier processing upon forming the opening 105 in the resin portion 103 .
- the light emitting device can maintain a sufficient mechanical strength against a lateral stress or impulse.
- shapes of the distal ends of the pair of leads 101 , 102 are asymmetric. That is, the portion 102 B for mounting the light emitting element 106 D on is formed to extend forward toward the center of the opening 105 .
- the light emitting element 106 D can be located in the center of the opening 105 , and the intensity profile of the emitted light, i.e. the luminous intensity property can be approximated to a uniform or symmetric profile. It is also possible to enhance the luminance.
- “Locating in the center” herein means to locate any portion of the light emitting element 106 D on the central axis of the opening 105 .
- the specific example shown here may use the light emitting element 106 A (or 106 C) using a conductive substrate as shown in FIG. 6 instead of the light emitting element 106 D.
- FIG. 10 is a plan view that schematically shows the eighth specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 9 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here also includes the protective diode 106 B and the semiconductor light emitting element 106 D.
- the opposed distal ends of the pair of leads 101 , 102 are aligned straight instead of being offset. Then the diode 106 B and the light emitting element 106 D are mounted at diagonal positions.
- the light emitting element 106 D is formed to be closer to the center of the opening 105 than the diode 106 B. Locating the optical axis closer to the center of the opening 105 ensures a more uniform luminous intensity property.
- FIG. 11 is a plan view that schematically shows the ninth specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 10 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here also includes the protective diode 106 B and the semiconductor light emitting element 106 D, and the opposed distal ends of the pair of leads 101 , 102 are aligned straight instead of being offset.
- the slits 101 G, 102 G are formed to be offset from each other. This configuration can also locate the light emitting element 106 D close to the center of the opening 105 .
- FIG. 12 is a plan view that schematically shows the tenth specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 11 are commonly labeled, and their detailed explanation is omitted for simplicity.
- two chips are mounted on a common lead, and they are aligned along the lengthwise direction of the opening 105 having an approximately elliptical or elongate-circular shape.
- the semiconductor light emitting elements 106 A, 106 C are mounted side by side on the lead 101 , and the wires 109 A, 109 B are connected to the lead 102 in the opposed position with respect to the shorter axis of the opening 105 .
- This arrangement of a plurality of chips along the longer axis, i.e. length wise direction, of the approximately elliptical or elongate-circular opening 105 is advantageous for effective use of the limited space.
- FIG. 13 is a plan view that schematically shows the eleventh specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 12 are commonly labeled, and their detailed explanation is omitted for simplicity.
- FIG. 14 is a plan view that schematically shows the twelfth specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 13 are commonly labeled, and their detailed explanation is omitted for simplicity.
- two chips are mounted on a common lead. These two chips, however, are disposed along the shorter axis direction of the approximately elliptical or elongate-circular opening 15 . Then the wires 109 A, 109 B are connected to the lead 102 in the opposed position with respect to the shorter axis of the opening 105 .
- This arrangement of a plurality of chips along the shorter axis of the approximately elliptical or elongate-circular opening 105 is also advantageous for effective use of the limited space.
- FIG. 15 is a plan view that schematically shows the thirteenth specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 14 are commonly labeled, and their detailed explanation is omitted for simplicity.
- FIG. 16 is a plan view that schematically shows the fourteenth specific example according to the first embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 15 are commonly labeled, and their detailed explanation is omitted for simplicity.
- a slit 101 G is formed in the lead 101 to divide its distal end into two parts 101 A, 101 B.
- the distal end of the lead 102 is divided into parts 102 A, 102 B. These divisional parts extend into the opening 105 .
- the light emitting element 106 D and the protective diode 106 B are disposed on the divisional part 101 A of the lead 101 along the longer axis of the opening 105 .
- a wire 109 A extending from the diode 106 B is connected to the divisional part 102 B of the lead 102 .
- a wire 109 B from the light emitting element 106 D is connected to the divisional part 102 A of the lead 102 , and the a wire 109 C from the light emitting element 106 D is connected to the divisional part 101 B of the lead 101 across the slit 101 G.
- the chip layout in the specific example shown here makes it possible to locate the light emitting element 106 D in the center of the opening 105 . Additionally, the mode of connecting the wire 109 C across the slit 101 G can isolate and protect the bonding region of the wire 109 C from extrusion of the adhesive upon mounting the diode 106 B and the light emitting element 106 D.
- FIG. 17 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to the second embodiment of the invention.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 16 are commonly labeled, and their detailed explanation is omitted for simplicity.
- a semiconductor light emitting element 106 F overlies a protective Zener diode 106 E. That is, the diode 106 E is mounted on the lead 101 , and the light emitting element 106 F is mounted thereon by flip-chip mounting. Then a wire 109 extends from the diode 106 E, and it is connected to the lead 102 .
- the sealing element 111 is preferably made of a silicone resin having a JISA hardness in the range from 50 to 90 to ensure various advantages including reliability as already explained with reference to the first embodiment.
- FIG. 18A is a cross-sectional view that shows a chip portion of the light emitting device according to the second embodiment in an enlarged scale.
- the protective diode 106 E has a planar structure in which a p-type region 152 is formed on the top surface of an n-type silicon substrate 150 .
- the p-side electrode 154 is formed in the p-type region 152
- the n-side electrode 156 is formed on the bottom surface of the substrate 150 .
- another n-side electrode 158 is formed on the top surface of the diode, and a wiring layer 160 connecting the upper and lower n-side electrodes 156 , 158 is formed to extend on a side surface of the diode 16 E.
- a high-reflectance film 162 is formed on the top surface of the diode 106 E.
- the high-reflectance film 162 has a high reflectance against light emitted from the light emitting element 106 F. It may be, for example, a metal film, or a Bragg reflection film stacking two or more kinds of thin films different in refractive index.
- the semiconductor light emitting element 106 F includes a buffer layer 122 , n-type contact layer 123 , n-type cladding layer 132 , active layer (light emitting layer) 124 , p-type cladding layer 125 and p-type contact layer 126 sequentially stacked on a translucent substrate 138 (illustrated upside down in FIG. 18A), and also includes an n-side electrode 127 and a p-side electrode 128 . Light emitted from the active layer 124 passes through the translucent substrate 138 , and extracted upward as illustrated.
- respective electrodes are connected to the electrode of the diode 106 E by bump contacts 142 , 144 that may be made of, for example, gold (Au) or indium (In).
- a wire 109 is bonded to the p-side electrode 154 of the diode 106 E and connected to the lead 102 .
- FIG. 18B is a circuit diagram of an equivalent circuit of the light emitting device.
- the instant embodiment vertically stacking the protective diode 106 E and the light emitting element 106 F can locate them in a very narrow space. Therefore, the outer dimension of the light emitting device need not be enlarged, and the conventional resin stem (package) as shown in FIGS. 37A and 37B can be use directly.
- the use of the high-reflectance film 162 on the top surface of the diode 106 E is effective for reflecting the light from the light emitting element 106 F toward the direction for extraction and thereby improving the light extraction efficiency. Simultaneously, the high-reflectance film 162 removes the problem that the operation of the diode 106 E is adversely affected or deteriorated by the light from the light emitting element 106 F. Furthermore, the use of the high-reflectance film 162 prevents deterioration of the paste 107 coated under the diode 106 E by light.
- the embodiment shown here can connect the chips to the lead with only one wire. As a result, it minimizes the problems caused by deformation or breakage of wire, and thereby improves the reliability.
- the embodiment shown here can provide the bump contact 142 with a high thermal conductivity close to the light emitting layer 124 of the light emitting element 106 F to provide a heat radiation path via the wire layer 160 . That is, it enhances the heat radiation efficiency of the light emitting element 106 F, and thereby realizes a light emitting device operative under a wider temperature range and having a long-time reliability.
- the site of the high-reflectance film 162 is not limited to the top surface of the diode 106 E, but the bottom surface of the light emitting element 106 F is also acceptable.
- the high-reflectance film 162 may be inserted between the diode 106 E and the light emitting element 106 F.
- the invention can prevent cracks of the resin and reduce the resin stress by using a silicone resin as the sealing element 111 .
- FIG. 19 is a cross-sectional view that schematically shows the second specific example regarding the sealing element 111 in the light emitting device according to the second embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 18 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the sealing element 111 of a silicone resin having a JISA hardness in the range from 50 to 90 merely enclose the multi-layered structure of the diode 106 E and the light emitting element 106 F, and a second sealing element 213 made of a translucent resin is provided outside the sealing element 111 .
- This configuration increases the freedom regarding the material and the additive material of the second sealing element 213 while maintaining a high reliability as already explained with reference to FIG. 2.
- FIG. 20 is a cross-sectional view that schematically shows a third specific example regarding the sealing element of the light emitting device according to the second embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 19 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the sealing element 111 of a silicone resin having a JISA hardness in the range from 50 to 90 merely enclose the multi-layered structure of the diode 106 E and the light emitting element 106 F, the outside thereof is open without any other sealing element.
- This configuration downsizes the emission portion as already explained with reference to FIG. 3, thereby enhances the luminance, and enhances the light converging function of the reflective surface 104 as much as the light converging function of a conventional lamp.
- FIG. 21 is a cross-sectional view that schematically shows a fourth specific example of the light emitting device according to the second embodiment.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 20 are commonly labeled, and their detailed explanation is omitted for simplicity.
- a convex translucent element 413 is provided on the sealing element 111 of a silicone resin having the JISA hardness in the range from 50 to 90.
- the convex translucent element 413 functions to converge light.
- the translucent element 413 may be made of, for example, a resin.
- a silicone resin is especially advantageous for reducing the difference in refractive index from the sealing element 111 and to reduce the loss by reflection at the interface with the sealing element 111 .
- the convex shape of the translucent element 413 is not limited to a hemisphere. Any other appropriate shape may be selected depending on the converging ratio or luminous intensity profile requested.
- the second embodiment can locate the light emitting element 106 F in the center of the opening 105 , the optical converging function of the convex translucent element 413 is maximized.
- a light emitting device as the third embodiment that is based on the light emitting device according to the first or second embodiment but mixes a fluorescent element in the sealing element 111 such that the light from the light emitting element can be extracted after wavelength conversion by the fluorescent element.
- FIG. 22 is a cross-sectional view that schematically shows a configuration of the substantial part of the light emitting device according to the third embodiment of the invention.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 21 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here has a general configuration similar to that shown in FIGS. 1A and 1B.
- the sealing element 111 filled in the opening 105 contains the fluorescent element 110 that absorbs primary light emitted from the light emitting element 106 and releases secondary light after wavelength conversion.
- Material of the fluorescent element 110 may be determined adequately taking account of the wavelength of the primary light emitted from the light emitting element 106 , wavelength of the secondary light requested, and so on.
- the fluorescent element 110 may be designed either to convert the wavelength of a part of the primary light from the light emitting element 106 into secondary light so as to permit mixed light of the non-converted primary light and the secondary light to be extracted, or to absorb all of the primary light from the light emitting element 106 such that the secondary light alone is extracted substantially.
- the light emitting element 106 emits blue light
- fluorescent element converts the wavelength of a part of the blue light into yellow light
- white light as a result of mixture of the blue light and yellow light is extracted.
- the primary light and the secondary light may be complementary.
- the latter scheme that permits only the secondary light to be extracted is advantageous for eliminating influences of the balance of the primary light and the secondary light. That is, this method can remove the problem of change of color by deviation or fluctuation of the emission characteristics of the light emitting element 106 and the fluorescent element 110 . For example, even when the wavelength of the light emitting element 106 fluctuates among products or shifts due to various factors such as temperature conditions and changes with time, influences thereof to each fluorescent element are small, and the balance of the mixed color obtained from the fluorescent elements does not change substantially. It results in realizing a light emitting device having remarkably stable l ⁇ emission characteristics over a wide temperature range and a long operation time.
- the fluorescent element 110 may be either a singular material or a combination of a fluorescent element 110 A for releasing red light, fluorescent element 110 B for releasing green light and fluorescent element 110 C for releasing blue light. In this case, white color is obtained. There are, however, various other combinations as explained later.
- Fluorescent elements 110 and sealing elements 111 usable in the third embodiment will be explained below in greater detail.
- the fluorescent element 110 used in the embodiment of the invention is a fluorescent material that releases light by absorbing ultraviolet light shorter than 400 nm emitted from the light emitting layer 124 of the light emitting element 106 , or a material that releases light by absorbing light emitted from another fluorescent element.
- the fluorescent element 110 preferably has a conversion efficiency of 1 lumen/watt or more.
- White light can be realized by mixing three primary colors of red, green and blue, or by mixing any two complementary colors.
- White light by three primary colors can be realized by using a first fluorescent element for releasing blue light by absorbing the primary light from the light emitting element 106 , a second fluorescent element for releasing red light, and a third fluorescent element for releasing green light.
- white light can be realized by using a light emitting element 106 which emits blue light, a first fluorescent element which releases red light by absorbing the primary light from the light emitting element, and a second fluorescent element which releases green light by absorbing the primary light from the light emitting element, and by mixing these primary light and secondary lights.
- White light by complementary colors can be realized by combining a first fluorescent element for releasing blue light by absorbing light from the light emitting element 106 and a second fluorescent element for emitting yellow light by absorbing the blue light, or by combining a first fluorescent element for releasing green light by absorbing light from the light emitting element 106 and a second fluorescent element for releasing red light by absorbing the green light.
- Fluorescent elements whose wavelength changes are not larger than 50 nm in the temperature range from ⁇ 40° C. to 100° C. are preferably used to realize a light emitting device independent from temperature characteristics of the light emitting element.
- the following fluorescent material for example, can be used for releasing yellow light.
- any desired tone can be made.
- white colors from white lamp color to white fluorescent lamp color can be realized by one of 1:1:1 through 7:1:1, 1:1:1 through 1:3:1 and 1:1:1 through 1:1:3 in R:G:B weight % ratio.
- the tone of the sealing element 111 will become white. That is, since the light emitting device emitting white light looks white also in the OFF state, its appearance is good, and a light emitting device excellent from the visual and design viewpoints can be provided.
- Fluorescent materials usable in the invention are not limited to inorganic fluorescent materials. High-luminance light emitting devices can be realized also by similarly using the following organic dye materials.
- individual dye materials can be dispersed in the resin by adding respective dye materials into a silicone resin as the sealing element and stirring it, and excitation efficiency of dyes can be enhanced.
- various colors of light can be realized with the light emitting device by combining appropriate materials of the fluorescent element (including dyes) 110 contained in the sealing element 111 . That is, any desired tone can be realized by combining red, green, blue and yellow fluorescent materials (and dyes).
- the embodiment of the invention can also realize stabilization of the emission wavelength, which could not attained with conventional semiconductor light emitting elements, even by using a single fluorescent element. That is, ordinary semiconductor light emitting elements are subject to shifting of the emission wavelength depending on the drive current, ambient temperature and modulating conditions. In contrast, in the light emitting device according to the embodiment of the invention, the emission wavelength is remarkably stable, independently of changes of the drive current and temperature by substantially extracting only the secondary lights emitted from the fluorescent elements.
- the emission characteristics of the light emitting device according to the embodiment of the invention is determined by the characteristics of the additive fluorescent element 110 regardless of characteristics of the light emitting element 106 , the production yield can be increased without variances of characteristics among different light emitting devices.
- FIGS. 23A through 23C show schematic diagrams that illustrate intensity profiles of emitted light depending upon the surface configuration of the sealing element.
- the profile of FIG. 23A is the intensity profile P of light from the light emitting element 106 using a sealing element 111 having a flat surface configuration
- the profile of FIG. 23B is that with a sealing element 111 having a concave surface configuration
- the profile of FIG. 23C is that with a sealing element 111 having a convex surface configuration.
- the intensity profile, i.e. orientation characteristics, of the emitted light of the device having the concave surface configuration shown in FIG. 23B apparently converges in the direction of the vertical axis Z.
- the profile corresponding to the convex surface configuration shown in FIG. 23C diverges in the direction of the xy plane.
- the light emitted from the fluorescent element contained near the convex portion of the sealing element 111 having the convex surface configuration spreads in the xy plane direction whereas the light emitted from the fluorescent element contained near the surface of the sealing element having the concave surface configuration is reflected by the side wall reflective surface 104 and contributes to increase the ratio of light traveling in the z-axis direction.
- the surface configuration of the sealing element 111 can be determined by adjusting its quantity to be buried. That is, by adjusting the filling quantity of the sealing element 111 , any desired orientation characteristics of the emitted light can be obtained.
- the convex surface configuration of the sealing element 111 may generate undesirable excited light in receipt of the light from adjacent light emitting devices. Therefore, the sealing element 111 preferably has a concave surface configuration also in applications of this kind.
- the embodiment of the invention can reliably, readily cope with those requirements by adjustment of the filling quantity of the sealing element 111 .
- the sealing element 111 is a member containing the fluorescent element 110 buried in the opening 105 to convert primary light from the light emitting element 106 .
- the sealing element 111 is preferably made of a material having a larger coupling energy than the energy of the primary light from the light emitting element 106 . Additionally, it preferably has the property of transmitting light after wavelength conversion by the fluorescent element 110 .
- the optical resistance to the primary light emitted from the light emitting element 106 may not be sufficiently high. More specifically, in receipt of primary light from the light emitting element 106 , epoxy resins, originally transparent, change in color through yellow, liver to black, and it results in a serious decrease of the light extraction efficiency. This problem becomes more serious as the wavelength of the primary light becomes shorter.
- silicone resin leads to a very satisfactory result. That is, if a silicone resin is used, change or color and other types of deterioration do not occur even after it is exposed to light having a comparatively shorter peak wavelength. By actually using silicone resin in a light emitting device using short-wavelength light as primary light, a high reliability could be realized.
- silicone resin containing the fluorescent element 110 is coated onto the light emitting element 106 mounted in the opening 105 by supplying it through a narrow nozzle while agitating it to uniformly mix predetermined fluorescent materials, and it is thereafter hardened.
- a silicone resin having a pre-curing viscosity around 100 cp through 10000 cp because it can hold particles of the fluorescent element uniformly dispersed without segregation or segmentation.
- light from the excited fluorescent element is uniformly, adequately spread by a fluorescent element having a large refractive index without being excessively spread or absorbed by other fluorescent elements. Therefore, light is uniformly mixed, and tone irregularity can be prevented.
- the silicone resin used in the embodiment of the invention has a high bonding force to the resin portion 103 and a high strength to humidity, and it is unlikely to crack even under a temperature stress. Additionally, the silicone resin buried in the opening can greatly alleviate the resin stress to the light emitting element 106 and the Au wire even upon changes of the ambient temperature.
- Rubber-like silicone resins have a JISA hardness in the range of approximately 50 to 90.
- Epoxy resins widely used as the sealing element materials in conventional light emitting devices have a JISA hardness around 95.
- the fluorescent element 110 spread in the resin during the supply of a current, and there was observed changes of tone.
- a RGB tri-color mixture type because of a large specific gravity of the red (R) fluorescent element, this fluorescent element migrated vertically downward, and an increase of the x value of the chromaticity coordinates was observed.
- FIG. 24 is a graph that shows measured changes of chromaticity x with current-supply time.
- the chromaticity x begins to increase from near 100 hours of the current supply time, and exhibits an accelerative increase beyond 1000 hours.
- a rubber-like silicone resin is used, no tone change was observed even after operation of 10000 hours under raised temperatures of the light emitting device due to the electric supply. It is presumed that the rubber-like silicone resin, hard and closely packed, was less likely to permit diffusion of the fluorescent element.
- FIGS. 25 through 27 shows devices modified from the devices shown in FIGS. 2 through 4 to contain the fluorescent element 110 in the sealing element 111 .
- the same or equivalent components as those already explained with reference to FIGS. 1A through 24 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the fluorescent element 110 is a mixture of fluorescent elements 110 A, 110 B and 110 C.
- the invention is not limited to this combination, but any other appropriate combination is also acceptable.
- FIGS. 28 through 31 shows devices modified from the devices shown in FIGS. 17 and 19 through 21 to contain the fluorescent element 110 in the sealing element 111 .
- the same or equivalent components as those already explained with reference to FIGS. 1A through 27 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the fluorescent element 110 is a mixture of fluorescent elements 110 A, 110 B and 110 C.
- the invention is not limited to this combination, but any other appropriate combination is also acceptable.
- the embodiment shown here is not limited to devices combining the fluorescent element with the sealing element 111 in the devices according to the first and second embodiments of the invention. Hereinbelow, some such other specific examples are introduced.
- FIG. 32 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to another embodiment of the invention.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 31 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here also includes a resin stem 100 , a stacked structure including a protective diode 106 E and a semiconductor light emitting element 106 F mounted thereon, and sealing element 111 embedding the stacked structure.
- the sealing element 111 is made of silicone resin having a hardness in a range from 50 through 90 in JISA value.
- the florescent element 110 is included in the silicone resin.
- the resin portion 103 has no side wall around the sealing element 111 such that the secondary light from the fluorescent element 110 both upwardly and laterally to realize a wide luminous intensity profile. This is suitable for applications expected to provide a wide field of view or a wide field of emission.
- Shapes of the sealing element and the resin stem 100 are not limited to those illustrated.
- the sealing element may be hemispherical as shown in FIG. 33, and the resin stem 100 may have a resin portion 103 configured to bury the leads 101 , 102 and surround the element with a low side wall.
- FIG. 34 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to an embodiment of the invention.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 33 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here also includes a pair of leads 101 , 102 .
- the first lead 101 has formed a cup portion 601 at the distal end, and the stacked structure including the protective diode 106 E and the light emitting element 106 F is mounted at the bottom of the cup portion 601 .
- the wire 109 extending from the diode 106 E is connected to the lead 102 .
- the sealing element 111 containing the fluorescent element 110 is formed to embed these components.
- the sealing element 111 is made of silicone resin having a hardness in a range from 50 through 90 in JISA value.
- the inner side wall surface of the cup portion 601 serves as the reflective surface to reflect the primary light from the light emitting element 106 upwardly. In receipt of the primary light, the fluorescent element 110 releases secondary light of predetermined wavelengths.
- the light emitting device shown here replaces conventional lamp-type semiconductor devices, and is operative as a general-purpose light emitting device having a relatively wide field of emission.
- FIG. 35 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to another embodiment of the invention.
- the same or equivalent components as those already explained with reference to FIGS. 1A through 34 are commonly labeled, and their detailed explanation is omitted for simplicity.
- the light emitting device shown here has a structure similar to the light emitting device shown in FIG. 34.
- the light emitting device also has a cup portion 601 at the distal end of the first lead 101 , and the stacked structure including the protective diode 106 E and the light emitting element 106 F is mounted at the bottom thereof. Then the wire 109 from the diode 106 F is connected to the lead 102 .
- the sealing element 111 is made of silicone resin having a hardness in a range from 50 through 90 in JISA value.
- the sealing element 111 containing the fluorescent element 110 is provided to embed those components.
- the sealing element 111 is small-sized, and a transparent element 713 is provided to enclose the sealing element 111 .
- the small-sized sealing element 111 containing the fluorescent element 110 diminishes the emission portion and increases the luminance.
- the top surface of the transparent element 713 functions as a lens to gather rays of light, and makes it possible to extract converged light as well.
- the transparent element 713 enclosing the sealing element 111 isolates the fluorescent element 110 from the outside atmosphere and improves its durability against moisture and corrosive atmosphere.
- the transparent element may be made of a resin. Especially, an epoxy resin or silicone resin is advantageous for close contact with the sealing element 111 to enhance the resistance to whether and the mechanical strength.
- the embodiment shown here is not limited to the illustrated example.
- the sealing element 111 containing the fluorescent element 110 may be limited only on the cup portion 601 to reduce the size of the emission portion and thereby increase the luminance.
- the wire 109 will extend beyond the boundary between the sealing element 111 and the transparent element 713 .
- the sealing element 111 and the transparent element 713 are made of similar materials, the stress at the boundary will be minimized and will prevent breakage of wire.
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Abstract
A light emitting device includes a plurality of chips efficiently disposed in a limited space of an opening that has an approximately elliptical or elongate-circular opening shape. The device includes a lead having a slit formed between a portion for bonding a wire to and a portion for mounting chips on, thereby to prevent extrusion of an adhesive and eliminate defective bonding.
Description
- This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2001-110676, filed on Apr. 9, 2001; the entire contents of which are incorporated herein by reference.
- This invention relates to a light emitting device, in particular, having an excellent emission property and a high reliability.
- Light emitting devices combining LEDs (light emitting diodes) or other semiconductor light emitting elements and fluorescent elements have been remarked as inexpensive, long-lived light emitting devices, and are widely used as various kinds of indicators, light sources, flat-type display devices, backlight of liquid crystal displays, and so forth.
- As typical light emitting devices, there are those mounting semiconductors light emitting elements in resin stems.
- FIGS. 37A and 37B show such a typical conventional light emitting device. FIG. 37A is a plan view showing a configuration of the substantially part thereof, and FIG. 37B is a cross-sectional view thereof.
- The light emitting device shown here is of a so-called “surface mounting” type, including a package (resin stem)800, semiconductor
light emitting element 802 andsealing element 804 of a resin. - The
resin stem 800 has a structure molding a pair ofleads resin portion 803 of a thermoplastic resin. Theresin portion 803 has an opening 801, and the semiconductorlight emitting element 802 is place therein. Then the semiconductorlight emitting element 802 is sealed with anepoxy resin 804. - The semiconductor
light emitting element 802 is mounted on thelead 806. An electrode (not shown) of the semiconductorlight emitting element 802 and thelead 805 are connected to each other by awire 809. When en electric power is supplied to the semiconductorlight emitting element 802 through those two leads 805, 806, the semiconductorlight emitting element 802 emits light, and the light is extracted from anemission surface 812 via theepoxy resin 804. - The Inventor, however, made researches and has found that conventional light emitting devices of this type have still room for improvement from the viewpoint of reliability and long-time stability.
- That is, through temperature cycle tests of 700 cycles under temperatures in the range from −40° C. to 110° C., various undesirable phenomena were observed, such as cracks C in the
epoxy resin 804 as shown in FIG. 38, or exfoliation of theepoxy resin 804 at the interface I with theresin stem 800. In some cases, the semiconductorlight emitting element 802 broke, or exfoliated from the mount surface, and thewire 809 cut down. - The light emitting device shown in FIGS. 37A and 37B certainly meets the requirements currently in force, i.e., 100 cycles as the current level of temperature cycle tests requested for ordinary civilian uses, and 300 cycles for car-borne uses. However, for further improvement of the reliability toward the future uses, essential review is required.
- The same circumstances commonly exist in all structures sealing semiconductor elements with epoxy resin, without being limited to that shown in FIGS. 37A and 37B.
- As a result of a careful review of mechanisms of malfunctions, the Inventor has realized that the
epoxy resins 804 is physically hard and fragile and produces a large stress upon hardening and that there still exists room for improvement in quality of close contact with theresin portion 803 of a thermoplastic resin that surrounds it. - Apart from this, there are semiconductor devices of a type as shown in FIGS. 37A and 37B but including two or more chips mounted in the opening801.
- Those having two or more semiconductor elements common in emission wavelength, for example, are enhanced in output.
- Those having two or more semiconductor elements different in emission wavelength can provide mixed color, thereby to diversify the color representation. In this case, two complementary colors can produce white light.
- It is sometimes desirable to mount an element for protecting the light emitting element in a common package. Incase of a light emitting element of a nitride semiconductor, it is often desirable to connect a Zener diode in a parallel opposite directions for the purpose of protecting the light emitting element from static electricity.
- However, the light emitting device shown in FIGS. 37A and 37B cannot provide a sufficient space for mounting the chip and for bonding the wire as well. If two chips are packed in the narrow opening by force, the optical axis of the light emitting element will largely offset from the center of the opening, and the intensity profile of the emitted light, i.e., luminous intensity property, will become a symmetrical. Then, the light emitting device cannot provide a uniform emission pattern required in applications such as the back light of a liquid crystal display.
- FIG. 39 is a schematic diagram showing a plan-viewed configuration of a light emitting device prepared by the Inventor for trial toward the present invention.
- The light emitting device shown here has an approximately
rectangular opening 901 formed in aresin portion 903, andchips opposed leads opening 901.Wires chips opposed leads - As a result of evaluation of this light emitting device, the following problems were found.
- The fist problem is that a part of an adhesive extruding out upon mounting the
chips wires chips - However, such an adhesive often extrudes on the
leads wires - An attempt of locating the wire bonding site remote from the chip for the purpose of preventing that problem will need a
larger opening 901 against the restriction on size. - The second problem lies in that the illustrated rectangular shape of the
opening 901 causes side walls of theresin portion 903 to be uniformly thin, and makes the mechanical strength insufficient. This problem becomes serious especially when a soft resin is used as the sealing element buried in the opening. For example, a silicone resin used as the sealing element is advantageous for reducing the residual stress and thereby reducing cracks of the sealing element and breakage of the wire. However, in case the side wall of theresin portion 903 is thin, the relatively soft silicone resin often fails to prevent an external lateral force to act on the chip and the wire. For example, upon picking up the light emitting device by grasping from its side surfaces for assembly and a test, the force actually acted upon the chip and the wire, and often deformed the wire. - The third problem is that the illustrated rectangular shape of the opening901 need a larger quantity of resin buried therein, and sometimes increases the resin stress. The resin filled in the
opening 901 produces a stress upon curing, or thereafter upon an increase of decrease of the temperature. - The degree of the stress depends on the buried quantity of the resin, and tends to increase as the buried quantity increases. Moreover, as already explained with reference to FIG. 38, epoxy resins exhibit a large stress.
- Therefore, the sealing resin filled in the illustrated
rectangular opening 901 produced a large stress, and is liable to cause exfoliation of thechips wires - That is, the attempt of mounting two or more chips in the light emitting device invites various problems contravening the requirements about the external dimensions.
- As reviewed above, conventional light emitting devices were not suitable for mounting a plurality of chips, and had room for improvement from the viewpoint of reliability as well.
- According to an embodiment of the invention, there is provided a light emitting device comprising: a resin portion having an opening, said opening having an approximately elliptical or elongate-circular opening shape;
- a first semiconductor light emitting element disposed inside said opening; a semiconductor element disposed inside said opening; and a silicone resin provided inside said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value.
- According to another embodiment of the invention, there is provided another light emitting device comprising: a lead; a resin portion embedding at least a part of said lead;
- a first semiconductor light emitting element mounted on said lead in an opening formed in said resin portion;
- a semiconductor element mounted on said lead in said opening; a wire connecting said first semiconductor light emitting element and said lead; and a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value, said lead having a slit formed therein between a portion where said first semiconductor light emitting element is mounted and a portion where said wire is connected.
- According to another embodiment of the invention, there is provided another light emitting device comprising: a first lead; a second lead; a resin portion embedding at least a part of said first and second leads; a first semiconductor light emitting element mounted on said first lead in an opening formed in said resin portion; a semiconductor element mounted on said second lead in said opening; a first wire connecting said first semiconductor light emitting element and said second lead; a second wire connecting said semiconductor element and said first lead; and a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value, said first lead having a first slit formed therein between a portion where said first semiconductor light emitting element is mounted and a portion where said second wire is connected, said second lead having a second slit formed therein between a portion where said semiconductor element is mounted and a portion where said first wire is connected.
- According to another embodiment of the invention, there is provided another light emitting device comprising: a first lead;a second lead; a resin portion embedding at least a part of said first and second leads; a first semiconductor light emitting element mounted on said first lead in an opening formed in said resin portion; a semiconductor element mounted on said first lead in said opening; a first wire connecting said first semiconductor light emitting element and said second lead; a second wire connecting said semiconductor element and said second lead; and a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value, said opening having a substantially elliptical or elongate-circular opening shape,said first semiconductor light emitting element and said semiconductor element being arranged along a longer axis or a shorter axis of said elliptical or elongate-circular opening.
- According to another embodiment of the invention, there is provided another light emitting device comprising: a semiconductor element; a first semiconductor light emitting element mounted on said semiconductor element by a metal bump;
- a silicone resin provided to enclose said semiconductor element and said first semiconductor light emitting element, said silicone resin having a hardness not lower than 50 in JISA value.
- According to another embodiment of the invention, there is provided another light emitting device comprising: a semiconductor light emitting element; a silicone resin provided to enclose said semiconductor light emitting element, said silicone resin having a hardness not lower than 50 in JISA value; and a fluorescent element which is included in said silicone resin, absorbs light emitted from said semiconductor light emitting element and releases light of a peak wavelength different from said light from said semiconductor light emitting element.
- In the present application, the “elongate-circle” means a shape connecting a pair of curved portions by a pair of substantially straight portions. The curved portions may be either regularly arc-shaped or irregularly arc-shaped.
- The present application contemplates, with the term “silicone resin”, any resin having as its skeleton a structure in which silicon atoms having organic radicals such as alkyl radicals or aryl radicals are alternately connected to oxygen atoms. Needless to say, those containing additive elements added to such skeletons are also included in “silicone resins”.
- In the present application, the “fluorescent element” may be any having a wavelength converting function, either inorganic or organic, including inorganic dyes having a wavelength converting function.
- The present invention will be understood more fully from the detailed description given herebelow and from the accompanying drawings of the embodiments of the invention. However, the drawings are not intended to imply limitation of the invention to a specific embodiment, but are for explanation and understanding only.
- In the drawings:
- FIGS. 1A and 1B show schematic diagrams illustrating a configuration of the substantial part of a light emitting device according to the first embodiment of the invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along the A-A line of FIG. 1A;
- FIG. 2 is a cross-sectional view that schematically shows the second specific example regarding a sealing
element 111 in the light emitting device according to the first embodiment; - FIG. 3 is a cross-sectional view that schematically shows the third specific example of the light emitting device according to the first embodiment;
- FIG. 4 is a cross-sectional view that schematically shows the fourth specific example of the light emitting device according to the first embodiment;
- FIG. 5 is a plan view that schematically shows the fifth specific example of the light emitting device according to the first embodiment;
- FIG. 6 is a cross-sectional view that schematically shows the structure of a semiconductor light emitting element usable in the configuration shown in FIGS. 1A and 1B or FIG. 5;
- FIG. 7 is a plan view that schematically shows the sixth specific example of the light emitting device according to the first embodiment;
- FIG. 8 is a cross-sectional view that shows a structure of the semiconductor
light emitting element 106D; - FIG. 9 is a plan view that schematically shows the seventh specific example of the light emitting device according to the first embodiment;
- FIG. 10 is a plan view that schematically shows the eighth specific example of the light emitting device according to the first embodiment;
- FIG. 11 is a plan view that schematically shows the ninth specific example of the light emitting device according to the first embodiment;
- FIG. 12 is a plan view that schematically shows the tenth specific example of the light emitting device according to the first embodiment;
- FIG. 13 is a plan view that schematically shows the eleventh specific example of the light emitting device according to the first embodiment;
- FIG. 14 is a plan view that schematically shows the twelfth specific example of in the light emitting device according to the first embodiment;
- FIG. 15 is a plan view that schematically shows the thirteenth specific example of the light emitting device according to the first embodiment;
- FIG. 16 is a plan view that schematically shows the fourteenth specific example of the light emitting device according to the first embodiment;
- FIG. 17 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to the second embodiment of the invention;
- FIG. 18A is a cross-sectional view that shows a chip portion of the light emitting device according to the second embodiment in an enlarged scale;
- FIG. 18B is a circuit diagram of an equivalent circuit of the light emitting device according to the second embodiment;
- FIG. 19 is a cross-sectional view that schematically shows the second specific example regarding the sealing
element 111 in the light emitting device according to the second embodiment; - FIG. 20 is a cross-sectional view that schematically shows the third specific example regarding the sealing
element 111 in the light emitting device according to the second embodiment; - FIG. 21 is a cross-sectional view that schematically shows the fourth specific example regarding the sealing
element 111 in the light emitting device according to the second embodiment; - FIG. 22 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to the third embodiment of the invention;
- FIGS. 23A through 23C show diagrams that schematically show intensity profiles of emitted light depending on the surface configuration of the sealing element, in which FIG. 23A shows the intensity profile P of light from the light emitting element using a
sealing element 111 having a flat surface configuration, FIG. 23B shows that with a sealingelement 111 having a concave surface configuration, and FIG. 23C shows that with a sealingelement 111 having a convex surface configuration; - FIG. 24 is a graph that shows measured changes of chromaticity x with current-supply time;
- FIG. 25 is a diagram corresponding to FIG. 2, in which, however, the sealing
element 111 contains afluorescent element 110; - FIG. 26 is a diagram corresponding to FIG. 3, in which, however, the sealing
element 111 contains afluorescent element 110; - FIG. 27 is a diagram corresponding to FIG. 4, in which, however, the sealing
element 111 contains afluorescent element 110; - FIG. 28 is a diagram corresponding to FIG. 17, in which, however, the sealing
element 111 contains afluorescent element 110; - FIG. 29 is a diagram corresponding to FIG. 19, in which, however, the sealing
element 111 contains afluorescent element 110; - FIG. 30 is a diagram corresponding to FIG. 20, in which, however, the sealing
element 111 contains afluorescent element 110; - FIG. 31 is a diagram corresponding to FIG. 21, in which, however, the sealing
element 111 contains afluorescent element 110; - FIG. 32 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device as a specific example according to the third embodiment of the invention;
- FIG. 33 is a cross-sectional view that shows a light emitting device having an approximately
hemispherical sealing element 111 and aresin stem 100 including aresin portion 103 configured to buryleads - FIG. 34 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device as a specific example according to the third embodiment of the invention;
- FIG. 35 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device as a specific example according to the third embodiment of the invention;
- FIG. 36 is a cross-sectional view that shows a light emitting device in which the
sealing element 111 containing thefluorescent element 110 is provided only in and on acup portion 601; - FIGS. 37A and 37B show schematic diagrams of a typical conventional light emitting device, in which FIG. 37A is a plan view illustrating its substantial part, and FIG. 37B is a cross-sectional view thereof;
- FIG. 38 is a schematic diagram that shows ho cracks C are produced in an
epoxy resin 804 and how exfoliation occurs at the interface I with theresin stem 800; and - FIG. 39 is a schematic diagram that shows a plan-viewed configuration of a light emitting device prepared by the Inventor in trials toward the present invention.
- Some embodiments of the invention will now be explained below with reference to the drawings.
- As the first embodiment of the invention, here is taken a light emitting device using a silicone resin as the material of a sealing element and having a unique layout pattern of chips.
- FIGS. 1A and 1B show schematic diagrams illustrating a configuration of the substantial part of a light emitting device according to the first embodiment of the invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along the A-A line of FIG. 1A.
- The
light emitting device 1A shown here includes aresin stem 100, a semiconductorlight emitting element 106A mounted on theresin stem 100, aprotective Zener diode 106B and asealing element 111 provided to embed them. - The
resin stem 100 includesleads resin portion 103 molded integrally with theleads - The
resin portion 103 is typically made of a thermoplastic resin preferably, for example, of a nylon system having inert coupling radicals. - The thermoplastic resin may be a resin having a high resistance to heat, such as liquid crystal polymer (LCP), polyphenylene sulfide (PPS: thermoplastic resin) or syndiotactic polystyrene (SPS: crystalline polystyrene). The plan-viewed outer configuration of the
resin portion 103 may be a substantial square approximately sized 2.0×2.0 mm through 6.0×6.0 mm, or a substantial rectangular approximately sized 2.0×3.0 mm through 5.0×7.0 mm. - The leads101, 102 have opposed ends close to each other, and extend therefrom in the opposite directions to outside the
resin portion 103. - The
resin portion 103 has formed anopening 105, and the semiconductorlight emitting element 106A and thediode 106B are mounted at the bottom of theopening 105. The plan-viewed shape of theopening 105 is approximately elliptical or approximately elongate-circular as illustrated. The inner wall surface of theresin portion 103 surrounding theelements reflective surface 104 for reflecting light. - The light emitting device shown in FIGS. 1A and 1B is characterized in (1) the material of the sealing
element 111, (2) shape of theopening 105 and (3) layout of the leads and the chips in theopening 105. - Among these features, the material of the sealing
element 111 is explained below in greater detail. - The invention uses a silicone resin instead of a conventional epoxy resin as the sealing
element 111 filling theopening 105. - As compared with epoxy resins, silicone resins are less fragile and less subjected to cracks. Silicone resins usable in the present invention exhibit a high bonding force with the
resin portion 103 made of a thermoplastic resin, for example, and a high moisture resistance. Additionally, they do not crack or exfoliate so much due to a temperature stress. Furthermore, such a silicone resin filled in the opening produces only a remarkably small resin stress to thelight emitting element 106A and theAu wire 109. Moreover, silicone resins are more resistance to light irradiated from thelight emitting element 106A than epoxy resins. - The Inventors further developed researches from those viewpoints. As a result, it has been found that the use of “rubber-like” silicone resin having a high hardness leads to an excellent result. Hardness of ordinary silicone resins ranges from 30 to 40 in JISA hardness value that is the hardness of the JIS standard. These silicone resins exhibit gel-like physical properties, and are physically soft. These silicone resins are hereinbelow called “gel-like silicone resins.
- In contrast, “rubber-like silicone resins” have a JISA hardness in the range of approximately 50 to 90. Epoxy resins widely used as the sealing element materials in conventional light emitting devices have a JISA hardness around 95.
- The Inventors compared and reviewed both “rubber-like silicone resins” and “gel-like silicone resins”, and has got the following knowledge.
- (1) Light emitting devices of the type shown in FIGS. 1A and 1B normally need the process of soldering, called “reflow”, for fixing outwardly projecting portions of the
leads 101, 102 (called “outer leads”, for example) to a packaging substrate locally covered with a solder. In that process using heat, gel-like silicone resins inevitably become soft, and actually, they often exfoliated at the interface with theresin portion 103. - In contrast, those phenomena did not occur with rubber-like silicone resins, and light emitting devices stably operated even under the temperature condition beyond 110° C.
- (2) Since gel-like silicone resins are soft, although the stress they give to the
light emitting element 106A and thewires element 111. In case a gel-like silicone resin having a JISA hardness in the range of 30 to 40 is used, the sealingelement 111 may be deformed by the pressing force from the vacuum collet, which in turn may deform thewires light emitting element 106A (and/ordiode 106B). - In contrast, rubber-like silicone resins having a JISA hardness in the range of 50 to 90 are prevented from deformation by a selector or an assembler used for selecting or assembling light emitting devices.
- As explained in Paragraphs (1) and (2) above, the Inventors have confirmed that the use of a rubber-like silicone resin instead of a gel-like silicone resin can remarkably improve the emission characteristics, reliability, mechanical strength, and so forth.
- A technique for increasing the hardness of a silicone resin is to add an agent for giving a thixotropy index.
- Upon burying a silicone resin, it is poured into the
opening 105 of the resin stem through a thin nozzle, and thereafter cured. In this process, it is preferable to use a silicone resin having a pre-curing viscosity around 100 cp through 10000 cp. Thereby, it is possible to fully bury the opening including narrow spaces and to limit the residual stress upon curing within a sufficiently low range, without giving an excessive stress to thelight emitting element 106A (diode 109B) and thewire 109A (109B). - Based on the knowledge reviewed above, the Inventor prepared light emitting devices according to the embodiment as shown in FIGS. 1A and 1B by using a rubber-like silicone resin having the pre-during viscosity of 1000 cp and post-curing JISA hardness value of 70, and carried out a temperature cycle test in the temperature range from −40° C. to 110° C. As a result, there occurred absolutely no problems of cracks or exfoliation of the sealing
element 111 of a silicone resin, breakage or exfoliation of thelight emitting element 106A (diode 109B), breakage of thewire 109A (109B), etc. The temperature cycle test is still continued at the time of filing of the present application. - The Inventor also prepared light emitting devices using epoxy resins, and carried similar evaluation. As a result, epoxy resins cracked near 700 cycles. In this manner, the devices using silicone resins have been confirmed to be greatly improved in reliability as compared to those using epoxy resins.
- The Inventor also carried out quantitative analysis of the stress applied to the semiconductor light emitting element with devices using silicone resins and devices using epoxy resins, respectively.
- Light emitting devices taken for the analysis were prepared by forming a 0.9 mm deep, 2.4 mm diameter, circular opening in the
resin portion 103 of the package, mounting a semiconductorlight emitting element 106 at the bottom of the opening, and burying a silicone resin of the JISA hardness of 70. Devices as comparative examples were prepared by burying an epoxy resin in the similar structure. In both types of light emitting devices, the semiconductor light emitting element had the size of 200×200 μm and the thickness of 150 μm. - While heating and maintaining those light emitting devices at 240° C., stress applied to the semiconductor light emitting element was analyzed at four corners (point A) of the top surface thereof (light emitting surface) and four corners (point B) of the bottom surface thereof (mounting surface). Its result is shown below.
Elastic Stress at 240 (MPa) Resin Modulus (MPa) Point A Point B Epoxy resin 2372 3.5 × 10−6 1.1 × 10−6 Silicone 48 1.7 × 10−6 7.8 × 10−6 resin - The temperature of 240° C. is the peak temperature that may be applied when the light emitting device is fixed to a packaging substrate, for example, by reflow of a solder. As shown, when the light emitting device is heated, a stress corresponding to the thermal expansion of the resin is applied to the light emitting element.
- The stress level of 3.5×10−6 produced in the epoxy resin is the level where breakage of wire will occur before 1000 cycles approximately in the temperature cycle test in the temperature range of −40° C. to 110° C., according to the statistics of the reliability test carried out by the Inventor.
- In case of the silicone resin, the stress applied to the light emitting element is about a half the stress given by the epoxy resin. Such a small stress is assumed to be the reason of realizing the remarkably high reliability by eliminating cracks of the resin, exfoliation of the light emitting element, deformation or breakage of wires, and absolutely eliminating malfunctions even in the temperature cycle of 1500 cycles.
- As explained above, it has been confirmed that the use of a silicone resin, in particular, a rubber-like silicone resin, reduces the possibility of cracks and exfoliation that often occurred in conventional epoxy resins, breakage of wires, and so on.
- The use of a silicone resin also improves the durability against light emitted from the semiconductor
light emitting element 106 or light intruding from the exterior of the light emitting device. Epoxy resins change in color when exposed to light, and even if it is initially transparent, its optical transmittance decreases after long-time use. - This phenomenon is magnified as the wavelength of light becomes shorter. For example, in case the epoxy resin is exposed to ultraviolet rays, the originally transparent epoxy resin changes in color through yellow, liver to black. It may result in a serious decrease of the light extraction efficiency. Ultraviolet rays may intrude from the exterior of the light emitting device.
- Through trials and reviews, the Inventor has found that the use of silicone resin leads to a very satisfactory result. That is, if a silicone resin is used, change or color and other types of deterioration do not occur even after it is exposed to short wavelength light such as ultraviolet rays. Therefore, silicone resins contribute to realization of light emitting devices exhibiting excellent resistance to light and weather.
- In the light emitting device shown in FIGS. 1A and 1B, the
resin portion 103 may be equipped with optical reflectivity. For example, theresin portion 103 may be made of 65 or more weight % of a thermoplastic resin and 35 or less weight % of a filling agent. The filling agent contains a high-reflective material such as titanium oxide (TiO3), silicon oxide, aluminum oxide, silica or alumina. In case of titanium oxide, its content is in the range from 10 to 15%. Because thereflective surface 104 is a part of the resin portion containing a diffusing material that reflects light, it can reflect light from thelight emitting element 106 and thefluorescent element 110 upward to realize a high luminance of the light emitting device. If thereflective surface 104 is configured as a paraboloid of revolution, for example, the output and the quality of the light emitting device can be further improved. - The
sealing element 111 of a silicone resin may also contain such a diffusing material diffused therein to expand the luminous distribution property broader. - Heretofore, detailed explanation has been made about materials of the sealing
element 111. - Next made is detailed explanation about the shape of the
opening 105 and the layout of leads and chips therein. - In the light emitting device shown in FIGS. 1A and 1B, the
opening 105 is approximately elliptical. - In the
opening 105, thelead 101 and thelead 102 are isolated. Near the distal end of thelead 101, aslit 101G is formed to divide it into theregions lead 102, aslit 102G is formed to divide it into theregions - The
light emitting element 106A is mounted in theregion 101A with an adhesive such as silver (Ag) paste. Thelight emitting element 106B is mounted in theregion 102B similarly with an adhesive 107 such as silver (Ag) paste. - From an electrode (not shown) formed on the
light emitting element 106A, thewire 109A is connected to theopposed region 102A. From an electrode (not shown) formed on thediode 106B, thewire 109B is connected to theopposed region 101B. - The configuration explained above provides the following effects.
- The
slits leads chips wires - Since the invention employs a shape with a longer diameter and a shorter diameter such as an approximately elliptical shape or an approximately elongate-circular shape as the shape of the opening in lieu of an approximately circular shape as shown by a broken line in FIG. 1A, which has been used conventionally, it is possible to effectively increase the area of the
opening 105 and thereby make an ample space for mounting two or more chips and bonding the wires. - The approximately elliptical or elongate-circular shape of the opening according to the invention makes it easy to locate the light emitting element closest to the center of the opening.
- The use of the approximately elliptical or elongate-circular shape of the opening according to the invention also enables the
corner portions 103C to be made thicker. As a result, the light emitting device maintains a sufficient mechanical strength, and it is prevented from deformation or wires and other kinds of damage even upon application of a lateral force during assembly or tests. - Furthermore, the approximately elliptical or elongate-circular shape of the opening prevents an increase of the resin quantity filled inside and thereby prevents the resin stress. As already explained with reference to FIG. 39, the resin stress increases as the quantity of resin filled as the sealing
element 111 increases. The invention, however, minimizes the increase of the resin quantity and simultaneously keeps an ample space for locating a plurality of chips. It results in eliminating the problems of exfoliation of chips, deformation or breakage of wires due to an increase of the resin stress. This effect is obtained as an additional effect by the use of a silicone resin as the sealingelement 111. - Moreover, the invention enables mounting of a plurality of chips while maintaining the outer dimension of the light emitting device compact. Therefore, by connecting the
protective diode 106B in a parallel, opposite direction from thelight emitting element 106A as illustrated, the invention can improve the reliability. In addition, by combining light emitting elements different in emission wavelength, the device can realize emission of white and other various colors, which has been difficult to emit conventionally. - The
slits leads - Heretofore, materials of the sealing
element 111, shapes of theopening 105 and layout patterns inside theopening 105 of the light emitting device according to the first embodiment have been explained with reference to FIGS. 1A and 1B. - Next explained are greater details of individual components of the light emitting device according to the invention.
- Referring to FIGS. 2 through 4, modifications regarding the sealing
element 111 will be explained. - FIG. 2 is a cross-sectional view that schematically shows the second specific example regarding a sealing
element 111 in the light emitting device according to the first embodiment. Among components shown here, the same or equivalent components as those already explained with reference to FIGS. 1A and 1B are commonly labeled, and their detailed explanation is omitted for simplicity. - The
light emitting device 1B shown here also includes aresin stem 100, semiconductorlight emitting element 106 mounted thereon, and sealingelement 111 of a silicone resin provided to embed theelement 106. - In this embodiment, however, the sealing
element 111 merely embeds thelight emitting element 106, and asecond sealing element 213 of a transparent resin is provided outside the sealingelement 111. - The
second sealing element 213 may be made of an epoxy resin, silicone resin or any of other various materials. Thesecond sealing element 213 may be colored, and any material adaptable to the dye or coloring agent used can be selected. - The
second sealing element 213 may contain a diffusing material dispersed therein to scatter light. In this case, light can be diffused, and broader light distribution characteristics can be obtained. - If a silicone resin is used as the
second sealing element 213, then its close contact with the sealingelement 111 is enhanced, and the moisture resistance is improved. - In this specific example, the sealing
element 111 made of a silicone resin wraps the entirety of theAu wire 109. Therefore, a reliable light emitting element free from breakage of wire due to a resin stress can be realized. If the wire partly projects into thesecond sealing element 213, it will readily break due to a stress produced at the interface between the sealingelements wire 109 is entirely embedded by the sealingelement 111, it is free from breakage. - FIG. 3 is a cross-sectional view that schematically shows the third specific example regarding the sealing
element 111 in the light emitting device according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A, 1B and 2 are commonly labeled, and their detailed explanation is omitted for simplicity. - The
light emitting device 1C shown here also includes aresin stem 100, semiconductorlight emitting element 106 mounted thereon, and sealingelement 111 provided to embed theelement 106. - Similarly to the second specific example, the sealing
element 111 merely embeds thelight emitting element 106. In this specific example, however, the space outside the sealingelement 111 remains open, without being filled by any other sealing element. - Here again, the limitative use of the sealing
element 111 only to enclose thelight emitting element 106 mounted at the bottom of theopening 105 contributes to small-sizing the emitting portion. Therefore, the luminance increases, and the function of thereflective surface 104 to gather rays of light is enhanced. - Especially, in the instant specific example, since the approximately
hemispheric sealing element 111 serves as the emission point, and thereflective surface 104 surrounds it, the same optically converging effect as a conventional lamp can be obtained. - Furthermore, similarly to the second specific example, since the sealing
element 111 embeds the entirety of theAu wires - FIG. 4 is a cross-sectional view that schematically shows the fourth specific example regarding the sealing
element 111 in the light emitting device according to the first embodiment. - Similarly to the first specific example, the
light emitting device 1D shown here also includes aresin stem 100, semiconductorlight emitting element 106 mounted thereon, and sealingelement 111 embedding theelement 106. - The embodiment shown here includes a convex
transparent element 413 is provided on the sealingelement 111 to ensure the function of gathering rays of light. Thetransparent element 413 may be made of a resin, for example. Especially, a silicone resin is advantageous for decreasing the difference of the refractive index from the sealingelement 111 and to reduce the loss by reflection at the interface with the sealingelement 111. - The convex shape of the
transparent element 413 is not limited to a spherical shape. Any appropriate shape can be selected depending on the required converging ratio or luminous intensity profile. - Next referring to FIGS. 5 through 15, some modifications regarding the shape of the
opening 105 and the layout pattern inside theopening 105 will be explained. - FIG. 5 is a plan view that schematically shows the fifth specific example regarding the sealing
element 111 in the light emitting device according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 4 are commonly labeled, and their detailed explanation is omitted for simplicity. - The light emitting device shown here includes two semiconductor
light emitting elements elements - If two light emitting
elements - If the light emitting elements are different in emission wavelength, the light emitting device can provide light of a mixed color. In this case, white light can be realized by combining, for example, a blue light emitting element and a yellow light emitting element that are chromatically complementary. White light can be obtained also by combining a red light emitting element and a blue-green light emitting element.
- FIG. 6 is a cross-sectional view that schematically shows the structure of a semiconductor light emitting element usable in the configuration shown in FIGS. 1A and 1B or FIG. 5. This structure is briefly explained here. The
light emitting element 106A (or 106C) includes abuffer layer 122, n-type contact layer 123, light emittinglayer 124, p-type cladding layer 125 and p-type contact layer 126 sequentially stacked on aconductive substrate 121. - The
light emitting layer 124 may have a quantum well (QW) structure in which barrier layers and well layers are stacked alternately. - The
conductive substrate 121 may be made of, for example, an n-type semiconductor. Respective layers on the substrate may be made of, for example, III-V compound semiconductors, II-IV compound semiconductors, IV-VI compound semiconductors and other various materials. - An n-
side electrode 127 is provided on the rear surface of thesubstrate 121. On the other hand, formed on the p-type contact layer 126 are a translucent p-side electrode 128 and abonding pad 129 of gold (Au) connected to the p-side electrode 128. Surface of the element is covered by aprotective film 130 of SiO2. - When a voltage is applied to the n-
side electrode 127 and the p-side electrode 128 of thelight emitting element 106A (106C), light generated in thelight emitting layer 124 is released from thesurface 131. The emission wavelength can be adjusted in a wide range by adjusting the material and thickness of the light emitting layer. - The embodiment shown here can realize various emission colors by using such semiconductor light emitting elements.
- FIG. 7 is a plan view that schematically shows the sixth specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 5 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here includes a
protective diode 106B and a semiconductorlight emitting element 106D. Thelight emitting element 106D is formed on an insulating substrate, and includes p-side and n-side electrodes (not shown) on the front surface.Wires leads protective diode 106B and thelight emitting element 106D are connected in the opposite directions in parallel. - FIG. 8 is a cross-sectional view that shows a structure of the semiconductor
light emitting element 106D. The device shown here is made by stacking semiconductor layers on an insulatingsubstrate 133. More specifically, sequentially stacked on the insulatingsubstrate 133 are abuffer layer 122, n-type contact layer 123, light emittinglayer 124, p-type cladding layer 125 and p-type contact layer 126. Here again, thelight emitting layer 124 may have a quantum well (QW) structure in which barrier layers and well layers are stacked alternately. - On the n-
type contact layer 123 exposed by selectively removing the multi-layered structure from its surface by etching, an n-side electrode 127 is formed. On the other hand, formed on the p-type contact layer 126 are a translucent p-side electrode 128 in form of a Ni/Au thin film having a thickness of tens of nanometers and abonding pad 129 of gold (Au) connected to the p-side electrode 128. Surface of the element is covered by aprotective film 130 of SiO2. - When a voltage is applied to the n-
side electrode 127 and the p-side electrode 128 of thelight emitting element 106D, intensive emission of light is obtained in the range from ultraviolet rays to green color depending on the composition and structure of thelight emitting layer 124. - The specific example shown in FIG. 7 can compactly accommodate both the semiconductor
light emitting element 106D formed on the insulating substrate and theprotective diode 106B in a limited space, and can reliably, easily bond thepredetermined wires 109A through 109C. Moreover, since the chips and the wire bonding portion are isolated by theslits - FIG. 9 is a plan view that schematically shows the seventh specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 7 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here also includes the
protective diode 106B and the semiconductorlight emitting element 106D. In this specific example, however, theopening 105 is not elliptical but approximately elongate-circular. In the present application, the “elongate circle” means a shape, like that of theopening 105 shown in FIG. 9, having a pair of opposed approximately arc-curved portions and connecting these curved portions by substantially straight portions. The curved portions need not be strictly arc-shaped. That is, the “approximately elongate-circle” pertains to a shape made up of a pair of curved portions connected by two substantially straight portions. - In general, the approximately elongate circle is advantageous for easier processing upon forming the
opening 105 in theresin portion 103. In addition, since fourcorners 103C are thicker, the light emitting device can maintain a sufficient mechanical strength against a lateral stress or impulse. - Furthermore, in the specific example shown here, shapes of the distal ends of the pair of
leads portion 102B for mounting thelight emitting element 106D on is formed to extend forward toward the center of theopening 105. Thus thelight emitting element 106D can be located in the center of theopening 105, and the intensity profile of the emitted light, i.e. the luminous intensity property can be approximated to a uniform or symmetric profile. It is also possible to enhance the luminance. “Locating in the center” herein means to locate any portion of thelight emitting element 106D on the central axis of theopening 105. - Needless to say, the specific example shown here may use the
light emitting element 106A (or 106C) using a conductive substrate as shown in FIG. 6 instead of thelight emitting element 106D. - FIG. 10 is a plan view that schematically shows the eighth specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 9 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here also includes the
protective diode 106B and the semiconductorlight emitting element 106D. In this specific example, however, the opposed distal ends of the pair ofleads diode 106B and thelight emitting element 106D are mounted at diagonal positions. - The
light emitting element 106D is formed to be closer to the center of theopening 105 than thediode 106B. Locating the optical axis closer to the center of theopening 105 ensures a more uniform luminous intensity property. - FIG. 11 is a plan view that schematically shows the ninth specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 10 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here also includes the
protective diode 106B and the semiconductorlight emitting element 106D, and the opposed distal ends of the pair ofleads slits light emitting element 106D close to the center of theopening 105. - FIG. 12 is a plan view that schematically shows the tenth specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 11 are commonly labeled, and their detailed explanation is omitted for simplicity.
- In this specific example, two chips are mounted on a common lead, and they are aligned along the lengthwise direction of the
opening 105 having an approximately elliptical or elongate-circular shape. - That is, in this specific example, the semiconductor
light emitting elements lead 101, and thewires lead 102 in the opposed position with respect to the shorter axis of theopening 105. - This arrangement of a plurality of chips along the longer axis, i.e. length wise direction, of the approximately elliptical or elongate-
circular opening 105 is advantageous for effective use of the limited space. - FIG. 13 is a plan view that schematically shows the eleventh specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 12 are commonly labeled, and their detailed explanation is omitted for simplicity.
- In this specific example, it is necessary to connect a
second wire 109C from thelight emitting element 106D formed on the insulating substrate to thelead 101. For this purpose, aslit 101G is formed in thelead 101, and thewire 109C is connected across theslit 101G. In this manner, the bonding region can be isolated from extrusion of the adhesive upon mounting thelight emitting element 106D and thediode 106B. - FIG. 14 is a plan view that schematically shows the twelfth specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 13 are commonly labeled, and their detailed explanation is omitted for simplicity.
- Also in this specific example, two chips are mounted on a common lead. These two chips, however, are disposed along the shorter axis direction of the approximately elliptical or elongate-circular opening15. Then the
wires lead 102 in the opposed position with respect to the shorter axis of theopening 105. - This arrangement of a plurality of chips along the shorter axis of the approximately elliptical or elongate-
circular opening 105 is also advantageous for effective use of the limited space. - FIG. 15 is a plan view that schematically shows the thirteenth specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 14 are commonly labeled, and their detailed explanation is omitted for simplicity.
- In this specific example, it is necessary to connect a
second wire 109C from thelight emitting element 106D to thelead 101. For this purpose, aslit 101G is formed in thelead 101, and thewire 109C is connected across theslit 101G. In this manner, the bonding region can be isolated from extrusion of the adhesive upon mounting thelight emitting element 106D and thediode 106B. - FIG. 16 is a plan view that schematically shows the fourteenth specific example according to the first embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 15 are commonly labeled, and their detailed explanation is omitted for simplicity.
- In the specific example shown here, a
slit 101G is formed in thelead 101 to divide its distal end into twoparts lead 102 is divided intoparts opening 105. - The
light emitting element 106D and theprotective diode 106B are disposed on thedivisional part 101A of thelead 101 along the longer axis of theopening 105. - A
wire 109A extending from thediode 106B is connected to thedivisional part 102B of thelead 102. Awire 109B from thelight emitting element 106D is connected to thedivisional part 102A of thelead 102, and the awire 109C from thelight emitting element 106D is connected to thedivisional part 101B of thelead 101 across theslit 101G. - The chip layout in the specific example shown here makes it possible to locate the
light emitting element 106D in the center of theopening 105. Additionally, the mode of connecting thewire 109C across theslit 101G can isolate and protect the bonding region of thewire 109C from extrusion of the adhesive upon mounting thediode 106B and thelight emitting element 106D. - Next explained is a light emitting device including a plurality of vertically stacked chips as the second embodiment of the invention.
- FIG. 17 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to the second embodiment of the invention. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 16 are commonly labeled, and their detailed explanation is omitted for simplicity.
- In this embodiment, a semiconductor
light emitting element 106F overlies aprotective Zener diode 106E. That is, thediode 106E is mounted on thelead 101, and thelight emitting element 106F is mounted thereon by flip-chip mounting. Then awire 109 extends from thediode 106E, and it is connected to thelead 102. - The
sealing element 111 is preferably made of a silicone resin having a JISA hardness in the range from 50 to 90 to ensure various advantages including reliability as already explained with reference to the first embodiment. - FIG. 18A is a cross-sectional view that shows a chip portion of the light emitting device according to the second embodiment in an enlarged scale. The
protective diode 106E has a planar structure in which a p-type region 152 is formed on the top surface of an n-type silicon substrate 150. The p-side electrode 154 is formed in the p-type region 152, and the n-side electrode 156 is formed on the bottom surface of thesubstrate 150. In addition, another n-side electrode 158 is formed on the top surface of the diode, and awiring layer 160 connecting the upper and lower n-side electrodes 156, 158 is formed to extend on a side surface of the diode 16E. - A high-
reflectance film 162 is formed on the top surface of thediode 106E. The high-reflectance film 162 has a high reflectance against light emitted from thelight emitting element 106F. It may be, for example, a metal film, or a Bragg reflection film stacking two or more kinds of thin films different in refractive index. - The semiconductor
light emitting element 106F includes abuffer layer 122, n-type contact layer 123, n-type cladding layer 132, active layer (light emitting layer) 124, p-type cladding layer 125 and p-type contact layer 126 sequentially stacked on a translucent substrate 138 (illustrated upside down in FIG. 18A), and also includes an n-side electrode 127 and a p-side electrode 128. Light emitted from theactive layer 124 passes through thetranslucent substrate 138, and extracted upward as illustrated. - In the
light emitting element 106F having the above-explained structure, respective electrodes are connected to the electrode of thediode 106E bybump contacts - Additionally, a
wire 109 is bonded to the p-side electrode 154 of thediode 106E and connected to thelead 102. - FIG. 18B is a circuit diagram of an equivalent circuit of the light emitting device. By connecting the
protective diode 106E in parallel with and in the opposite direction from thelight emitting element 106F as illustrated, it is possible to protect thelight emitting element 106F from a surge current or static electricity. - The instant embodiment vertically stacking the
protective diode 106E and thelight emitting element 106F can locate them in a very narrow space. Therefore, the outer dimension of the light emitting device need not be enlarged, and the conventional resin stem (package) as shown in FIGS. 37A and 37B can be use directly. - The use of the high-
reflectance film 162 on the top surface of thediode 106E is effective for reflecting the light from thelight emitting element 106F toward the direction for extraction and thereby improving the light extraction efficiency. Simultaneously, the high-reflectance film 162 removes the problem that the operation of thediode 106E is adversely affected or deteriorated by the light from thelight emitting element 106F. Furthermore, the use of the high-reflectance film 162 prevents deterioration of thepaste 107 coated under thediode 106E by light. - Furthermore, the embodiment shown here can connect the chips to the lead with only one wire. As a result, it minimizes the problems caused by deformation or breakage of wire, and thereby improves the reliability.
- Moreover, the embodiment shown here can provide the
bump contact 142 with a high thermal conductivity close to thelight emitting layer 124 of thelight emitting element 106F to provide a heat radiation path via thewire layer 160. That is, it enhances the heat radiation efficiency of thelight emitting element 106F, and thereby realizes a light emitting device operative under a wider temperature range and having a long-time reliability. - In the present invention, the site of the high-
reflectance film 162 is not limited to the top surface of thediode 106E, but the bottom surface of thelight emitting element 106F is also acceptable. Alternatively, the high-reflectance film 162 may be inserted between thediode 106E and thelight emitting element 106F. - The multi-layered structure of the
diode 106E and the light emitting 106F in theopening 105 results in thinning the sealingelement 111 so much. There rises the possibility of insufficient strength of the sealing element 11 in the upper part of the chip or a high resin stress. As a result, if a conventional epoxy resin is used, there may occur cracks in an upper part of the chip or exfoliation or splitting of the chip as shown in FIG. 38. - The invention, however, can prevent cracks of the resin and reduce the resin stress by using a silicone resin as the sealing
element 111. - Explained below are some modifications of the structure using a silicone resin as the sealing element.
- FIG. 19 is a cross-sectional view that schematically shows the second specific example regarding the sealing
element 111 in the light emitting device according to the second embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 18 are commonly labeled, and their detailed explanation is omitted for simplicity. - Similarly to the device shown in FIG. 2, in the device shown here, the sealing
element 111 of a silicone resin having a JISA hardness in the range from 50 to 90 merely enclose the multi-layered structure of thediode 106E and thelight emitting element 106F, and asecond sealing element 213 made of a translucent resin is provided outside the sealingelement 111. - This configuration increases the freedom regarding the material and the additive material of the
second sealing element 213 while maintaining a high reliability as already explained with reference to FIG. 2. - FIG. 20 is a cross-sectional view that schematically shows a third specific example regarding the sealing element of the light emitting device according to the second embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 19 are commonly labeled, and their detailed explanation is omitted for simplicity.
- In this specific example, similarly to the device shown in FIG. 3, the sealing
element 111 of a silicone resin having a JISA hardness in the range from 50 to 90 merely enclose the multi-layered structure of thediode 106E and thelight emitting element 106F, the outside thereof is open without any other sealing element. - This configuration downsizes the emission portion as already explained with reference to FIG. 3, thereby enhances the luminance, and enhances the light converging function of the
reflective surface 104 as much as the light converging function of a conventional lamp. - FIG. 21 is a cross-sectional view that schematically shows a fourth specific example of the light emitting device according to the second embodiment. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 20 are commonly labeled, and their detailed explanation is omitted for simplicity.
- In this specific example, similarly to the device shown in FIG. 4, a convex
translucent element 413 is provided on the sealingelement 111 of a silicone resin having the JISA hardness in the range from 50 to 90. The convextranslucent element 413 functions to converge light. Thetranslucent element 413 may be made of, for example, a resin. A silicone resin is especially advantageous for reducing the difference in refractive index from the sealingelement 111 and to reduce the loss by reflection at the interface with the sealingelement 111. - The convex shape of the
translucent element 413 is not limited to a hemisphere. Any other appropriate shape may be selected depending on the converging ratio or luminous intensity profile requested. - Since the second embodiment can locate the
light emitting element 106F in the center of theopening 105, the optical converging function of the convextranslucent element 413 is maximized. - Next explained is a light emitting device as the third embodiment that is based on the light emitting device according to the first or second embodiment but mixes a fluorescent element in the sealing
element 111 such that the light from the light emitting element can be extracted after wavelength conversion by the fluorescent element. - FIG. 22 is a cross-sectional view that schematically shows a configuration of the substantial part of the light emitting device according to the third embodiment of the invention. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 21 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here has a general configuration similar to that shown in FIGS. 1A and 1B. In this embodiment, however, the sealing
element 111 filled in theopening 105 contains thefluorescent element 110 that absorbs primary light emitted from thelight emitting element 106 and releases secondary light after wavelength conversion. Material of thefluorescent element 110 may be determined adequately taking account of the wavelength of the primary light emitted from thelight emitting element 106, wavelength of the secondary light requested, and so on. - In the light emitting device, the
fluorescent element 110 may be designed either to convert the wavelength of a part of the primary light from thelight emitting element 106 into secondary light so as to permit mixed light of the non-converted primary light and the secondary light to be extracted, or to absorb all of the primary light from thelight emitting element 106 such that the secondary light alone is extracted substantially. - In case of the former scheme, if the
light emitting element 106 emits blue light, and fluorescent element converts the wavelength of a part of the blue light into yellow light, and white light as a result of mixture of the blue light and yellow light is extracted. There are, however, various other combinations of the primary light and the secondary light. To obtain white light, the primary light and the secondary light may be complementary. - The latter scheme that permits only the secondary light to be extracted is advantageous for eliminating influences of the balance of the primary light and the secondary light. That is, this method can remove the problem of change of color by deviation or fluctuation of the emission characteristics of the
light emitting element 106 and thefluorescent element 110. For example, even when the wavelength of thelight emitting element 106 fluctuates among products or shifts due to various factors such as temperature conditions and changes with time, influences thereof to each fluorescent element are small, and the balance of the mixed color obtained from the fluorescent elements does not change substantially. It results in realizing a light emitting device having remarkably stable l¥emission characteristics over a wide temperature range and a long operation time. - In any of these schemes, the
fluorescent element 110 may be either a singular material or a combination of afluorescent element 110A for releasing red light,fluorescent element 110B for releasing green light andfluorescent element 110C for releasing blue light. In this case, white color is obtained. There are, however, various other combinations as explained later. -
Fluorescent elements 110 and sealingelements 111 usable in the third embodiment will be explained below in greater detail. - (Re: Fluorescent Element110)
- The
fluorescent element 110 used in the embodiment of the invention is a fluorescent material that releases light by absorbing ultraviolet light shorter than 400 nm emitted from thelight emitting layer 124 of thelight emitting element 106, or a material that releases light by absorbing light emitted from another fluorescent element. Thefluorescent element 110 preferably has a conversion efficiency of 1 lumen/watt or more. - White light can be realized by mixing three primary colors of red, green and blue, or by mixing any two complementary colors. White light by three primary colors can be realized by using a first fluorescent element for releasing blue light by absorbing the primary light from the
light emitting element 106, a second fluorescent element for releasing red light, and a third fluorescent element for releasing green light. - Alternatively, white light can be realized by using a
light emitting element 106 which emits blue light, a first fluorescent element which releases red light by absorbing the primary light from the light emitting element, and a second fluorescent element which releases green light by absorbing the primary light from the light emitting element, and by mixing these primary light and secondary lights. - White light by complementary colors can be realized by combining a first fluorescent element for releasing blue light by absorbing light from the
light emitting element 106 and a second fluorescent element for emitting yellow light by absorbing the blue light, or by combining a first fluorescent element for releasing green light by absorbing light from thelight emitting element 106 and a second fluorescent element for releasing red light by absorbing the green light. - Fluorescent elements whose wavelength changes are not larger than 50 nm in the temperature range from −40° C. to 100° C. are preferably used to realize a light emitting device independent from temperature characteristics of the light emitting element.
- The use of fluorescent elements whose wavelength changes do not exceed 50 nm when the
light emitting element 106 is operated by a drive current in the range from 1 mA to 100 mA enables realization of a light emitting device independent from changes in emission spectrum caused by the drive current of the element. - There are the following fluorescent materials that can release blue light.
- ZnS:Ag
- ZnS:Ag+Pigment
- ZnS:Ag, Al
- ZnS:Ag, Cu, Ga, Cl
- ZnS:Ag+In2O3
- ZnS:Zn+In2O3
- (Ba, Eu)MgAl10O17
- (Sr, Ca, Ba, Mg)10(PO4)6Cl2:EU
- Sr10(PO4)6Cl2:Eu
- (Ba, Sr, Eu) (Mg, Mn)Al10O17
- 10(Sr, Ca, Ba, Eu)≅6PO4≅Cl2
- BaMg2Al16O25:Eu
- There are the following fluorescent elements that can release green light.
- ZnS:Cu, Al
- ZnS:Cu, Al+Pigment
- (Zn, Cd)S:Cu, Al
- ZnS:Cu, Au, Al, +pigment
- Y3Al5O12:Tb
- Y3(Al, Ga)5O12:Tb
- Y2SiO5:Tb
- Zn2SiO4:Mn
- (Zn, Cd)S:Cu
- ZnS:Cu
- Zn2Si4:Mn
- ZnS:Cu+Zn2SiO4:Mn
- Gd2O2S:Tb
- (Zn, Cd)S:Ag
- ZnS:Cu, Al
- Y2O2S:Tb
- ZnS:Cu, Al+In2O3
- (Zn, Cd)S:Ag+In2O3
- (Zn, Mn)2SiO4
- BaAl12O19:Mn
- (Ba, Sr, Mg)O≅aAl2O3:Mn
- LaPO4:Ce, Tb
- Zn2SiO4:Mn
- ZnS:Cu
- 3(Ba, Mg, Eu, Mn)O≅8Al2O3
- La2O3≅0.2SiO2≅0.9P2O5:Ce, Tb
- CeMgAl11O19:Tb
- There are the following fluorescent materials usable to release red light.
- Y2O2S:Eu
- Y2O2S:Eu+pigment
- Y2O3:Eu
- Zn3(PO4)2:Mn
- (Zn, Cd) S:Ag+In2O3
- (Y, Gd, Eu)BO3
- (Y, Gd, Eu)2O3
- YVO4:Eu
- La2O2S:Eu, Sm
- The following fluorescent material, for example, can be used for releasing yellow light.
- YAG:Ce
- By using those red fluorescent elements, green fluorescent elements and blue fluorescent elements in an appropriate adjusted R:G:B ratio, any desired tone can be made. For example, white colors from white lamp color to white fluorescent lamp color can be realized by one of 1:1:1 through 7:1:1, 1:1:1 through 1:3:1 and 1:1:1 through 1:1:3 in R:G:B weight % ratio.
- When the total weight percent of the mixed fluorescent elements is adjusted in the range from 1 weight % to 50 weight % relative to the weight of the sealing element containing the fluorescent elements, substantial wavelength conversion is realized. When it is adjusted in the range of 10 weigh % to 30 weight %, a light emitting device with a high luminance is realized.
- In case those RGB fluorescent elements are appropriately selected and mixed, the tone of the sealing
element 111 will become white. That is, since the light emitting device emitting white light looks white also in the OFF state, its appearance is good, and a light emitting device excellent from the visual and design viewpoints can be provided. - Fluorescent materials usable in the invention are not limited to inorganic fluorescent materials. High-luminance light emitting devices can be realized also by similarly using the following organic dye materials.
- xanthene dyes
- oxazine dyes
- cyanine dyes
- rhodamine B (630 nm)
- coumarin 153 (535 nm)
- polyparaphenylene vinylene (510 nm)
- coumarin 1 (430 nm)
- coumarin 120 (450 nm)
- tris-(8-hydroxyquinoline) aluminum (Alq3 or AlQ) (green light)
- 4-dicyanomethylene-2-methyl-6(p-dimethylaminostyrene)-4H-pyran (DCM) (orange/red light)
- Also when some kinds of dye materials are used, individual dye materials can be dispersed in the resin by adding respective dye materials into a silicone resin as the sealing element and stirring it, and excitation efficiency of dyes can be enhanced.
- According to the embodiment of the invention, various colors of light can be realized with the light emitting device by combining appropriate materials of the fluorescent element (including dyes)110 contained in the sealing
element 111. That is, any desired tone can be realized by combining red, green, blue and yellow fluorescent materials (and dyes). - On the other hand, the embodiment of the invention can also realize stabilization of the emission wavelength, which could not attained with conventional semiconductor light emitting elements, even by using a single fluorescent element. That is, ordinary semiconductor light emitting elements are subject to shifting of the emission wavelength depending on the drive current, ambient temperature and modulating conditions. In contrast, in the light emitting device according to the embodiment of the invention, the emission wavelength is remarkably stable, independently of changes of the drive current and temperature by substantially extracting only the secondary lights emitted from the fluorescent elements.
- In addition, the emission characteristics of the light emitting device according to the embodiment of the invention is determined by the characteristics of the additive
fluorescent element 110 regardless of characteristics of thelight emitting element 106, the production yield can be increased without variances of characteristics among different light emitting devices. - (Re: Surface Configuration of the Sealing Element111)
- The Inventors have got new knowledge about the surface configuration of the sealing
element 111 through his own trial and review about it. - FIGS. 23A through 23C show schematic diagrams that illustrate intensity profiles of emitted light depending upon the surface configuration of the sealing element. The profile of FIG. 23A is the intensity profile P of light from the
light emitting element 106 using asealing element 111 having a flat surface configuration, the profile of FIG. 23B is that with a sealingelement 111 having a concave surface configuration, and the profile of FIG. 23C is that with a sealingelement 111 having a convex surface configuration. - In comparison with the case of the flat configuration shown in FIG. 23A, the intensity profile, i.e. orientation characteristics, of the emitted light of the device having the concave surface configuration shown in FIG. 23B apparently converges in the direction of the vertical axis Z. In contrast, the profile corresponding to the convex surface configuration shown in FIG. 23C diverges in the direction of the xy plane. Its reason might be that the light emitted from the fluorescent element contained near the convex portion of the sealing
element 111 having the convex surface configuration spreads in the xy plane direction whereas the light emitted from the fluorescent element contained near the surface of the sealing element having the concave surface configuration is reflected by the side wallreflective surface 104 and contributes to increase the ratio of light traveling in the z-axis direction. - The surface configuration of the sealing
element 111, either convex or concave, can be determined by adjusting its quantity to be buried. That is, by adjusting the filling quantity of the sealingelement 111, any desired orientation characteristics of the emitted light can be obtained. - In case a plurality of light emitting devices are arranged in parallel as a planar type image display apparatus, the convex surface configuration of the sealing
element 111 may generate undesirable excited light in receipt of the light from adjacent light emitting devices. Therefore, the sealingelement 111 preferably has a concave surface configuration also in applications of this kind. - The embodiment of the invention can reliably, readily cope with those requirements by adjustment of the filling quantity of the sealing
element 111. - (Re: Material of the Sealing Element111)
- The
sealing element 111 is a member containing thefluorescent element 110 buried in theopening 105 to convert primary light from thelight emitting element 106. For this purpose, the sealingelement 111 is preferably made of a material having a larger coupling energy than the energy of the primary light from thelight emitting element 106. Additionally, it preferably has the property of transmitting light after wavelength conversion by thefluorescent element 110. - If, however, conventional epoxy resins are used as the material of the sealing
element 111, the optical resistance to the primary light emitted from thelight emitting element 106 may not be sufficiently high. More specifically, in receipt of primary light from thelight emitting element 106, epoxy resins, originally transparent, change in color through yellow, liver to black, and it results in a serious decrease of the light extraction efficiency. This problem becomes more serious as the wavelength of the primary light becomes shorter. - Through trials and reviews, the Inventors have found that the use of silicone resin leads to a very satisfactory result. That is, if a silicone resin is used, change or color and other types of deterioration do not occur even after it is exposed to light having a comparatively shorter peak wavelength. By actually using silicone resin in a light emitting device using short-wavelength light as primary light, a high reliability could be realized.
- The Inventors have found that some silicone resins have a fairly high transmittance in the wavelength range from ultra violet through the visible range. In addition, the optical transmittance thereof can be kept more than 60% of the initial value even after operation of 1000 hours.
- In a manufacturing process of the device shown in FIG. 22, silicone resin containing the
fluorescent element 110 is coated onto thelight emitting element 106 mounted in theopening 105 by supplying it through a narrow nozzle while agitating it to uniformly mix predetermined fluorescent materials, and it is thereafter hardened. - In this process, it is preferable to use a silicone resin having a pre-curing viscosity around 100 cp through 10000 cp because it can hold particles of the fluorescent element uniformly dispersed without segregation or segmentation. In this manner, light from the excited fluorescent element is uniformly, adequately spread by a fluorescent element having a large refractive index without being excessively spread or absorbed by other fluorescent elements. Therefore, light is uniformly mixed, and tone irregularity can be prevented.
- The silicone resin used in the embodiment of the invention has a high bonding force to the
resin portion 103 and a high strength to humidity, and it is unlikely to crack even under a temperature stress. Additionally, the silicone resin buried in the opening can greatly alleviate the resin stress to thelight emitting element 106 and the Au wire even upon changes of the ambient temperature. - The Inventors further developed researches from those viewpoints. As a result, it has been found that the use of “rubber-like” silicone resin having a high hardness leads to an excellent result. Hardness of ordinary silicone resins ranges from 30 to 40 in JISA hardness value that is the hardness of the JIS standard. These silicone resins exhibit gel-like physical properties, and are physically soft. Those silicone resins are hereinbelow called “gel-like silicone resins.
- In contrast, “rubber-like silicone resins” have a JISA hardness in the range of approximately 50 to 90. Epoxy resins widely used as the sealing element materials in conventional light emitting devices have a JISA hardness around 95.
- The Inventors compared and reviewed both “rubber-like silicone resins” and “gel-like silicone resins”, and has got the following knowledge.
- When gel-like silicone was used, the
fluorescent element 110 spread in the resin during the supply of a current, and there was observed changes of tone. In case of a RGB tri-color mixture type, because of a large specific gravity of the red (R) fluorescent element, this fluorescent element migrated vertically downward, and an increase of the x value of the chromaticity coordinates was observed. - FIG. 24 is a graph that shows measured changes of chromaticity x with current-supply time. As shown there, in case a gel-like silicone resin is used as the material of the sealing
element 111, the chromaticity x begins to increase from near 100 hours of the current supply time, and exhibits an accelerative increase beyond 1000 hours. In contrast, in case a rubber-like silicone resin is used, no tone change was observed even after operation of 10000 hours under raised temperatures of the light emitting device due to the electric supply. It is presumed that the rubber-like silicone resin, hard and closely packed, was less likely to permit diffusion of the fluorescent element. - Thus, a degradation of the optical performance can be prevented by using the rubber-like slilicone instead of the gel-like silicone.
- On the other hand, when a scattering agent is added together with the
fluorescent element 110 to the silicone resin as the sealing element, it is possible to scatter and evenly deliver primary light from thelight emitting element 106 to the fluorescent particles and to scatter the light from thefluorescent element 110 so as to realize a uniform mixture of colors. This contributes to realization of desired emission characteristics even with a less quantity offluorescent element 110. - As explained above, according to the invention, by mixing the
fluorescent element 110 into the sealingelement 111 of a silicone resin having a specific hardness, emission characteristics and reliability can be improved significantly. - The instant embodiment, when applied to the light emitting element according to the first and third embodiments of the invention, ensures the following effects.
- Hereinbelow, these specific examples are explained with reference to the drawings.
- FIGS. 25 through 27 shows devices modified from the devices shown in FIGS. 2 through 4 to contain the
fluorescent element 110 in the sealingelement 111. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 24 are commonly labeled, and their detailed explanation is omitted for simplicity. In the specific examples shown here, thefluorescent element 110 is a mixture offluorescent elements - In this manner, by combining the fluorescent element with the light emitting device incorporating a plurality chips by making use of the unique opening shape and the unique chip layout pattern explained with reference to the first embodiment of the invention, it is possible to further improve the emission property and realize emission of any desired color.
- FIGS. 28 through 31 shows devices modified from the devices shown in FIGS. 17 and 19 through21 to contain the
fluorescent element 110 in the sealingelement 111. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 27 are commonly labeled, and their detailed explanation is omitted for simplicity. Here again, thefluorescent element 110 is a mixture offluorescent elements - In this manner, by combining the fluorescent element with the light emitting device incorporating a plurality of chips by making use of the unique structure of stacking chips as already explained with reference to the second embodiment of the invention, it is possible to realize a compact light emitting device further improved in emission characteristics while ensuring a high reliability.
- The embodiment shown here is not limited to devices combining the fluorescent element with the sealing
element 111 in the devices according to the first and second embodiments of the invention. Hereinbelow, some such other specific examples are introduced. - FIG. 32 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to another embodiment of the invention. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 31 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here also includes a
resin stem 100, a stacked structure including aprotective diode 106E and a semiconductorlight emitting element 106F mounted thereon, and sealingelement 111 embedding the stacked structure. The sealingelement 111 is made of silicone resin having a hardness in a range from 50 through 90 in JISA value. Theflorescent element 110 is included in the silicone resin. - In the instant embodiment, however, the
resin portion 103 has no side wall around the sealingelement 111 such that the secondary light from thefluorescent element 110 both upwardly and laterally to realize a wide luminous intensity profile. This is suitable for applications expected to provide a wide field of view or a wide field of emission. - Shapes of the sealing element and the
resin stem 100 are not limited to those illustrated. For example, the sealing element may be hemispherical as shown in FIG. 33, and theresin stem 100 may have aresin portion 103 configured to bury theleads - FIG. 34 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to an embodiment of the invention. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 33 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here also includes a pair of
leads first lead 101 has formed acup portion 601 at the distal end, and the stacked structure including theprotective diode 106E and thelight emitting element 106F is mounted at the bottom of thecup portion 601. Then thewire 109 extending from thediode 106E is connected to thelead 102. The sealingelement 111 containing thefluorescent element 110 is formed to embed these components. The sealingelement 111 is made of silicone resin having a hardness in a range from 50 through 90 in JISA value. - The inner side wall surface of the
cup portion 601 serves as the reflective surface to reflect the primary light from thelight emitting element 106 upwardly. In receipt of the primary light, thefluorescent element 110 releases secondary light of predetermined wavelengths. - The light emitting device shown here replaces conventional lamp-type semiconductor devices, and is operative as a general-purpose light emitting device having a relatively wide field of emission.
- FIG. 35 is a cross-sectional view that schematically shows a configuration of the substantial part of a light emitting device according to another embodiment of the invention. Here again, the same or equivalent components as those already explained with reference to FIGS. 1A through 34 are commonly labeled, and their detailed explanation is omitted for simplicity.
- The light emitting device shown here has a structure similar to the light emitting device shown in FIG. 34. The light emitting device also has a
cup portion 601 at the distal end of thefirst lead 101, and the stacked structure including theprotective diode 106E and thelight emitting element 106F is mounted at the bottom thereof. Then thewire 109 from thediode 106F is connected to thelead 102. The sealingelement 111 is made of silicone resin having a hardness in a range from 50 through 90 in JISA value. The sealingelement 111 containing thefluorescent element 110 is provided to embed those components. - In the instant embodiment, however, the sealing
element 111 is small-sized, and atransparent element 713 is provided to enclose the sealingelement 111. - The small-
sized sealing element 111 containing thefluorescent element 110 diminishes the emission portion and increases the luminance. The top surface of thetransparent element 713 functions as a lens to gather rays of light, and makes it possible to extract converged light as well. - The
transparent element 713 enclosing the sealingelement 111 isolates thefluorescent element 110 from the outside atmosphere and improves its durability against moisture and corrosive atmosphere. The transparent element may be made of a resin. Especially, an epoxy resin or silicone resin is advantageous for close contact with the sealingelement 111 to enhance the resistance to whether and the mechanical strength. - The embodiment shown here is not limited to the illustrated example. For example, as shown in FIG. 36, the sealing
element 111 containing thefluorescent element 110 may be limited only on thecup portion 601 to reduce the size of the emission portion and thereby increase the luminance. In this case, thewire 109 will extend beyond the boundary between the sealingelement 111 and thetransparent element 713. However, if the sealingelement 111 and thetransparent element 713 are made of similar materials, the stress at the boundary will be minimized and will prevent breakage of wire. - Heretofore, various embodiments of the invention have been explained with reference to specific examples. The invention, however, is not limited to those examples. Rather, the invention should be construed to include various changes and modifications an ordinary skilled person can make regarding, for example, the materials of the fluorescent elements, structures and materials of the light emitting element, shapes of the leads and the sealing
element 111, dimensional relations among components, and so on. - While the present invention has been disclosed in terms of the embodiment in order to facilitate better understanding thereof, it should be appreciated that the invention can be embodied in various ways without departing from the principle of the invention. Therefore, the invention should be understood to include all possible embodiments and modification to the shown embodiments which can be embodied without departing from the principle of the invention as set forth in the appended claims.
Claims (20)
1. A light emitting device comprising:
a resin portion having an opening, said opening having an approximately elliptical or elongate-circular opening shape;
a first semiconductor light emitting element disposed inside said opening;
a semiconductor element disposed inside said opening; and
a silicone resin provided inside said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value.
2. A light emitting device according to claim 1 , further comprising a wire connected to said semiconductor light emitting element,
wherein said silicone resin is provided to enclose said wire as well.
3. A light emitting device comprising:
a lead;
a resin portion embedding at least a part of said lead;
a first semiconductor light emitting element mounted on said lead in an opening formed in said resin portion;
a semiconductor element mounted on said lead in said opening;
a wire connecting said first semiconductor light emitting element and said lead; and
a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value,
said lead having a slit formed therein between a portion where said first semiconductor light emitting element is mounted and a portion where said wire is connected.
4. A light emitting device comprising:
a first lead;
a second lead;
a resin portion embedding at least a part of said first and second leads;
a first semiconductor light emitting element mounted on said first lead in an opening formed in said resin portion;
a semiconductor element mounted on said second lead in said opening;
a first wire connecting said first semiconductor light emitting element and said second lead;
a second wire connecting said semiconductor element and said first lead; and
a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value,
said first lead having a first slit formed there in between a portion where said first semiconductor light emitting element is mounted and a portion where said second wire is connected,
said second lead having a second slit formed therein between a portion where said semiconductor element is mounted and a portion where said first wire is connected.
5. A light emitting device according to claim 3 or 4 wherein said opening has a substantially elliptical or elongate-circular opening shape.
6. A light emitting device comprising:
a first lead;
a second lead;
a resin portion embedding at least a part of said first and second leads;
a first semiconductor light emitting element mounted on said first lead in an opening formed in said resin portion;
a semiconductor element mounted on said first lead in said opening;
a first wire connecting said first semiconductor light emitting element and said second lead;
a second wire connecting said semiconductor element and said second lead; and
a silicone resin provided in said opening to enclose said first semiconductor light emitting element and said semiconductor element, said silicone resin having a hardness not lower than 50 in JISA value,
said opening having a substantially elliptical or elongate-circular opening shape,
said first semiconductor light emitting element and said semiconductor element being arranged along a longer axis or a shorter axis of said elliptical or elongate-circular opening.
7. A light emitting device according to claim 6 , further comprising a third wire connecting said first semiconductor light emitting element and said first lead,
wherein said first lead having a slit formed therein between a portion where said first semiconductor light emitting element is mounted and a portion where said third wire is connected.
8. A light emitting device according to claim 3 , wherein said first semiconductor light emitting element is placed in a center of said opening.
9. A light emitting device according to claim 3 , wherein said silicone resin is provided to enclose said wire as well.
10. A light emitting device according to claim 1 , wherein said semiconductor element is a second semiconductor light emitting element.
11. A light emitting device according to claim 10 , wherein said first semiconductor light emitting element and said second semiconductor light emitting element are different in peak wavelength of light they emit.
12. A light emitting device comprising:
a semiconductor element;
a first semiconductor light emitting element mounted on said semiconductor element by a metal bump;
a silicone resin provided to enclose said semiconductor element and said first semiconductor light emitting element, said silicone resin having a hardness not lower than 50 in JISA value.
13. A light emitting device according to claim 12 , further comprising a resin portion having an opening,
wherein said semiconductor element and said first semiconductor light emitting element are placed in a center of said opening.
14. A light emitting device according to claim 12 , further comprising a wire connected to said semiconductor element,
wherein said silicone resin is provided to enclose said wire as well.
15. A light emitting device according to claim 12 , wherein said semiconductor element is a protective diode connected in parallel with said first semiconductor light emitting element.
16. A light emitting device according to claim 1 , further comprising a fluorescent element which is included in said silicone resin, absorbs light emitted from said first semiconductor light emitting element and releases light of a peak wavelength different from said light from said first semiconductor light emitting element.
17. A light emitting device according to claim 1 , wherein said silicone resin has a pre-curing viscosity in the range not lower than 100 cp and not higher than 10000 cp.
18. A light emitting device according to claim 1 wherein said silicone resin has a convex surface configuration.
19. A light emitting device comprising:
a semiconductor light emitting element;
a silicone resin provided to enclose said semiconductor light emitting element, said silicone resin having a hardness not lower than 50 in JISA value; and
a fluorescent element which is included in said silicone resin, absorbs light emitted from said semiconductor light emitting element and releases light of a peak wavelength different from said light from said semiconductor light emitting element.
20. A light emitting device according to claim 1 , wherein said silicone resin has a hardness not higher than 90 in JISA value.
Priority Applications (1)
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US10/795,839 US20040217369A1 (en) | 2001-04-09 | 2004-03-08 | Light emitting device |
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JP2001110676A JP2002314143A (en) | 2001-04-09 | 2001-04-09 | Light emitting device |
JP2001-110676 | 2001-04-09 | ||
US10/118,604 US6747293B2 (en) | 2001-04-09 | 2002-04-08 | Light emitting device |
US10/795,839 US20040217369A1 (en) | 2001-04-09 | 2004-03-08 | Light emitting device |
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US10/118,604 Division US6747293B2 (en) | 2001-04-09 | 2002-04-08 | Light emitting device |
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US20040217369A1 true US20040217369A1 (en) | 2004-11-04 |
Family
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Family Applications (2)
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US10/118,604 Expired - Lifetime US6747293B2 (en) | 2001-04-09 | 2002-04-08 | Light emitting device |
US10/795,839 Abandoned US20040217369A1 (en) | 2001-04-09 | 2004-03-08 | Light emitting device |
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US (2) | US6747293B2 (en) |
EP (1) | EP1249874A3 (en) |
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KR (3) | KR20020079516A (en) |
CN (2) | CN1231980C (en) |
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Also Published As
Publication number | Publication date |
---|---|
KR100514609B1 (en) | 2005-09-14 |
CN1231980C (en) | 2005-12-14 |
KR20020079516A (en) | 2002-10-19 |
EP1249874A2 (en) | 2002-10-16 |
US6747293B2 (en) | 2004-06-08 |
CN1381906A (en) | 2002-11-27 |
CN1797766A (en) | 2006-07-05 |
US20020190262A1 (en) | 2002-12-19 |
JP2002314143A (en) | 2002-10-25 |
KR20050039764A (en) | 2005-04-29 |
KR20040091605A (en) | 2004-10-28 |
EP1249874A3 (en) | 2008-06-04 |
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