JP3690968B2 - Emitting device and method of forming - Google Patents

Emitting device and method of forming Download PDF

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JP3690968B2
JP3690968B2 JP2000198363A JP2000198363A JP3690968B2 JP 3690968 B2 JP3690968 B2 JP 3690968B2 JP 2000198363 A JP2000198363 A JP 2000198363A JP 2000198363 A JP2000198363 A JP 2000198363A JP 3690968 B2 JP3690968 B2 JP 3690968B2
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light
phosphor
diffusing agent
mold member
emitting element
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JP2001077433A (en
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雅史 蔵本
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日亜化学工業株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

【0001】 [0001]
【発明の属する技術分野】 BACKGROUND OF THE INVENTION
本発明は発光素子と発光素子からの波長を変換する蛍光体を用いた発光装置にかかわり、特に、コントラスト比と光取り出し効率が高く、量産性に優れた発光装置を提供することにある。 The present invention relates to a light emitting device using a phosphor that converts a wavelength of a light emitting element emitting element, in particular, high contrast ratio and the light extraction efficiency is to provide excellent light emission device for mass production.
【0002】 [0002]
【従来技術】 [Prior art]
本出願人は、高輝度に発光する青色LEDを開発した。 The applicant has developed a blue LED that emits high luminance. また、その応用製品として青色が発光可能なLEDチップと、そのLEDチップからの光を吸収して黄色に発光する蛍光体とを組合せ、LEDチップからの青色光と、蛍光体から黄色光の混色によって、白色が発光可能な発光ダイオードを実用化させた。 Further, the LED chip blue capable of emitting light as an application product, combining a phosphor which emits yellow absorbs light from the LED chip, and blue light from the LED chip, mixing yellow light from the phosphor the white was shown practically capable of emitting light emitting diode.
【0003】 [0003]
かかる白色系が発光可能な発光ダイオードとして具体的には、樹脂基板の凹部内にLEDチップを配置させると共にそのLEDチップをLEDチップからの青色の可視光を吸収し、黄色の蛍光を発する蛍光体含有の透光性樹脂で被覆してある。 Specific examples such white light emission can emitting diodes, the LED chip together to arrange the LED chips in the recess of the resin substrate absorbs blue visible light from the LED chip, a phosphor emitting yellow fluorescence It is coated with a translucent resin containing. このLEDチップに電流を流すことによって、一チップ二端子構造の比較的簡単な構成で白色系が発光可能となる。 By applying an electric current to the LED chip, white becomes possible emission with a relatively simple structure of one chip two-terminal structure. このため、白色発光ダイオードとして急速に市場で利用され始めている。 Therefore, it is rapidly beginning to be available on the market as a white light emitting diode.
【0004】 [0004]
このような蛍光体は、可視光を吸収し可視光を発光するが故に有彩色に着色しており、上述のごとき、黄色に発光する蛍光体では、外来光が照射されると蛍光体自体が黄色に見える。 Such phosphors are colored absorbs the emitted but because chromatic visible light visible light, such as described above, the phosphor emitting yellow, when external light is irradiated phosphor itself It appears to be yellow. そのため、発光ダイオードの発光観測面側から見ると蛍光体の色に発光ダイオードの表面が見え、外部からの光によって蛍光体が含有された樹脂全体が黄色に自ら発光して見える。 Therefore, when viewed from the light emission observing surface side of the light-emitting diode visible surface of the phosphor light emitting diodes color, it appears to emitting their own the whole resin in which the phosphor is contained yellow by the light from the outside. そのため、発光素子の点灯時と非点灯時のコントラスト比が悪くなる。 Therefore, the contrast ratio when the OFF time of lighting of the light emitting element is deteriorated. また、黄色の蛍光体や赤色の蛍光体では、発光観測面側が黄色や赤色に見え注意色や危険色となるため、視認性上もこのような発光ダイオードをディスプレイに用いることは好ましくない。 Further, in the phosphor and a red phosphor yellow, for light emission observing surface side becomes note color or critical colors appeared yellow and red, also the visibility using such a light-emitting diode display is not preferable. このようなコントラスト比などを改善する方法の一つとして蛍光体が含有された樹脂を、光拡散剤が含有された樹脂で被覆することが考えられる。 The resin in which the phosphor is contained as one way to improve such such contrast ratio, a light diffusing agent may be considered to be coated with a resin that is contained.
【0005】 [0005]
【発明が解決しようとする課題】 [Problems that the Invention is to Solve
しかしながら、蛍光体が含有された樹脂とは別に光拡散剤を含有させた樹脂で封止する場合は、形成工程が複雑化し量産性などが低い。 However, if the sealing with a resin phosphor was contained separately light diffusing agent and a resin that is contained, is low, such as complex and mass production formation process. また、より小型化の発光装置が求められる現在においては、異なる樹脂を精度良く形成させることが極めて難しく、歩留まりが低下する傾向にあるという問題があった。 Also, more miniaturized light emitting device in the current required, different resins accurately formed so it is extremely difficult, the yield is disadvantageously tends to decrease. そこで本発明は、かかる問題を解決して量産性よくコントラスト比に優れた発光装置及びその形成方法を提供するものである。 The present invention is to provide an excellent light-emitting device and a method of forming a mass production may contrast ratio to solve such problems.
【0006】 [0006]
【課題を解決するための手段】 In order to solve the problems]
本発明は、可視光を発光する半導体発光素子と、前記半導体発光素子を被覆する透光性モールド部材と、前記透光性モールド部材に含有させた前記半導体発光素子からの可視光を吸収して、その可視光よりも長波長の可視光を発光する有彩色蛍光体と、光拡散剤と、を有し、前記半導体発光素子からの光と前記蛍光体からの光との混色光を発光する発光装置であって、前記蛍光体は、前記透光性モールド部材及び前記光拡散剤よりも大きい比重を有すると共に、前記透光性モールド部材において、前記蛍光体の濃度は前記半導体発光素子に近づくにつれて高くなり、これと反対に前記光拡散剤の濃度は前記半導体発光素子と対向する前記モールド部材表面側に近づくにつれて徐々に高くなり、 前記光拡散剤の濃度が高い光拡散剤層が形成され The present invention absorbs a semiconductor light emitting element emits visible light, and light-mold member permeable covering the semiconductor light-emitting device, the visible light from the semiconductor light emitting element is contained in the light-transmitting mold member a chromatic color phosphor emitting visible light of longer wavelength than the visible light comprises a light diffusing agent, and emits mixed light of the light from the light with the phosphor from the semiconductor light emitting element a light emitting device, the phosphor, the which has a greater specific gravity than the translucent mold member and the light diffusing agent in the light-transmitting mold member, the concentration of the phosphor closer to the semiconductor light emitting element higher becomes as, concentration of the light diffusing agent to the contrary is the gradually increases as it approaches the mold member surface to the semiconductor light emitting element and the counter, a high concentration of the light diffusing agent layer of the light diffusing agent is formed 前記蛍光体の平均粒径は1μm以上100μm以下であり、前記光拡散剤の平均粒径は0.5μm以上10μm以下であり、前記蛍光体の平均粒径は前記光拡散剤の平均粒径よりも大きく、前記光拡散剤は、外部からの光を反射すると共に、前記半導体発光素子及び前記蛍光体からの光を散乱させ外部に光を放出し、前記蛍光体及び前記光拡散剤を有する透光性モールド部材は、外部からの光により無彩色に視認されることを特徴とする発光装置に関する。 The average particle diameter of the phosphor is at 1μm or more 100μm or less, an average particle diameter of the light diffusing agents are 0.5μm or 10μm or less, an average particle diameter of the phosphor than the average particle size of the light diffusing agent greater, the light diffusing agent serves to reflect light from the outside, said emits light to the outside to scatter the light from the semiconductor light emitting element and the phosphor, Toru having the phosphor and the light diffusing agent light-mold member, a light emitting apparatus characterized by being visible achromatic by light from the outside. 特に、本発明では蛍光体、透光性モールド部材及び光拡散剤との関係を、蛍光体の比重が透光性モールド部材及び光拡散剤よりも大きくしてある。 In particular, the present invention phosphor, the relationship between the translucent mold member and a light diffusing agent is made larger than the specific gravity of the phosphor is translucent mold member and a light diffusing agent.
【0007】 [0007]
これによって、コントラスト比の高い発光装置を比較的簡単に形成させることができる。 Thereby, it is possible to relatively easily form the light-emitting device with high contrast ratio. また、蛍光体の使用量をより減らしつつ、白色系が発光可能な発光装置とすることができる。 Further, while reducing more the amount of phosphor, white can be capable of emitting light emitting device. また、繰り返しの使用においても信頼性の高い発光装置とすることができる。 It can also be a highly reliable light-emitting device in repeated use.
【0008】 [0008]
前記蛍光体は、Ceで付活されたY ・5/3Al 系蛍光体、 並びにEu及びCrの少なくともいずれか一方で付活された窒素含有CaO−Al −SiO 蛍光体から選択される少なくとも1種であることが好ましい。 The phosphor activated with Y 2 O 3 · 5 / 3Al 2 O 3 phosphor in Ce, and nitrogen-containing CaO-Al 2 O 3 -SiO that are at least activated in any one of Eu and Cr it is preferred from the second phosphor is at least one selected. これにより簡便で、高輝度に発光する、信頼性の高い混色発光可能な発光装置を提供することができる。 Thus a simple, it emits high luminance, it is possible to provide a color mixing highly reliable light-emitting light-emitting device capable.
【0009】 [0009]
前記蛍光体は、前記半導体発光素子の光で、それぞれ異なる発光色及び異なるボディーカラーを有する少なくとも2種類の蛍光体であることが好ましい。 The phosphor in the light of the semiconductor light emitting element is preferably at least 2 kinds of phosphors having different emission colors and different body color, respectively.
【0010】 [0010]
本発明は、可視光を発光する半導体発光素子と、前記半導体発光素子を被覆する透光性モールド部材と、前記透光性モールド部材に含有させた前記半導体発光素子からの可視光を吸収して、その可視光よりも長波長の可視光を発光する有彩色蛍光体と、光拡散剤と、を有し、前記半導体発光素子からの光と前記蛍光体からの光との混色光を発光する発光装置の形成方法であって、 前記蛍光体の平均粒径は1μm以上100μm以下であり、前記光拡散剤の平均粒径は0.5μm以上10μm以下であり、前記蛍光体の平均粒径は前記光拡散剤の平均粒径よりも大きい蛍光体及び光拡散剤を用いて、前記透光性モールド部材となる材料中に、前記光拡散剤と、前記透光性モールド部材及び前記光拡散剤よりも比重が大きい蛍光体とを、ほぼ均一に The present invention absorbs a semiconductor light emitting element emits visible light, and light-mold member permeable covering the semiconductor light-emitting device, the visible light from the semiconductor light emitting element is contained in the light-transmitting mold member a chromatic color phosphor emitting visible light of longer wavelength than the visible light comprises a light diffusing agent, and emits mixed light of the light from the light with the phosphor from the semiconductor light emitting element a method of forming a light-emitting device, wherein an average particle diameter of the phosphor is at 1μm or more 100μm or less, an average particle diameter of the light diffusing agents are 0.5μm or 10μm or less, an average particle diameter of the phosphor by using the phosphor and a light diffusing agent is greater than the average particle diameter of the light diffusing agent, wherein the in the material becomes translucent mold member, the light diffusing agent and the light-transmitting mold member and the light diffusing agent the phosphor and the specific gravity is greater than, substantially uniformly 散する工程と、前記半導体発光素子上に、前記光拡散剤及び前記蛍光体が含有された前記透光性モールド部材となる材料で被覆する工程と、前記透光性モールド部材となる材料の粘度を低下させ、前記蛍光体の濃度を前記半導体発光素子に近づくにつれて高くし、これと反対に前記光拡散剤の濃度を前記半導体発光素子と対向する前記透光性モールド部材表面側に近づくにつれて徐々に高くし、前記光拡散剤の濃度が高い光拡散剤層を形成した後 、硬化する工程と、を有する発光装置の形成方法に関する。 The viscosity of a step of aeration, the upper semiconductor light-emitting device, comprising the steps of the light-diffusing agent and the phosphor is coated with a material to be the light-transmitting mold member containing the a translucent mold member material lowering the said concentration of the phosphor is increased closer to the semiconductor light emitting device, gradually as it to approach the concentration of the light diffusing agent in opposite to the light-transmitting sealing member surface facing the semiconductor light emitting element the higher, after forming the high concentration light diffusing agent layer of the light diffusing agent, a method of forming a light emitting device and a step of curing. これによって、比較的簡単に蛍光体の使用量が少なく混色性に優れた発光装置を歩留まり良く形成することができる。 Thus, a relatively simple luminous amount of the phosphor is excellent in less color mixture device capable of high yield formation.
【0012】 [0012]
【発明の実施の形態】 DETAILED DESCRIPTION OF THE INVENTION
本発明者は種々の実験の結果、蛍光体、光拡散剤及びそれらを含有させる樹脂の比重を特定の関係とすることによって、比較的簡単な方法で信頼性の高い発光ダイオードを形成できることを見出し本発明を成したものである。 The present inventors as a result of various experiments, the phosphor by the specific gravity of the light diffusing agent and a resin to contain them and specific relationship, found that can form a high luminous diodes reliable in a relatively simple manner it is those that form the present invention.
【0013】 [0013]
すなわち、赤色や黄色など有彩色に着色した蛍光体を、光拡散剤や蛍光体を含有させる樹脂よりも比重が大きいものに選択する。 That is, the phosphor is colored into a chromatic color such as red or yellow, than the resin contain a light diffusing agent and the phosphor is selected specific gravity is large. この様に選択された樹脂中に蛍光体、光拡散剤を含有させ、これらで発光素子を被覆し硬化させる。 Phosphors selected resin in this manner, contain a light diffusing agent, it is cured to cover the light emitting element thereto. 樹脂の硬化時などに生ずる樹脂粘性低下と比重の違いによって、比重の大きい蛍光体は発光素子側に沈降する。 The resin viscosity decreases and the difference in specific gravity caused such as during curing of the resin, large phosphor specific gravity settle to the light emitting element side. 他方、光拡散剤は、分散あるいは発光素子と対向する表面側に分布する。 On the other hand, the light diffusing agent is distributed on the surface side opposite to the dispersion or light emitting element. したがって、発光観測面側からは、有彩色の蛍光体の色が光拡散剤で緩和される、あるいは無彩色に見えることになる。 Therefore, from the light emission observing surface side, the color of the phosphor chromatic is reduced by the light diffusing agent, or will appear achromatic. 以下、本発明の具体的実施態様について、詳述するがこれのみに限定されないことはいうまでもない。 Hereinafter, specific embodiments of the present invention, it is needless to say that although described is not limited only thereto.
(実施態様例1)発光装置100であるチップタイプLEDを例として示す。 (Embodiment example 1) shown by way of illustration chip type LED is a light-emitting device 100. 金属平板を打ち抜きによって形成させたリード電極を金型内に配置させて樹脂をインサート成形する。 The lead electrode was formed by punching a metal flat plate is disposed in a mold a resin insert molding. これによって、発光素子を配置させるパッケージを形成させることができる。 Thereby, it is possible to form a package for arranging the light emitting element.
【0014】 [0014]
パッケージには、発光素子からの光を効率よく集光するためにキャビティを形成させキャビティ内に発光素子を配置させても良い。 The package may be light-emitting elements are arranged in the cavity to form a cavity in order to efficiently condense the light from the light emitting element. また、反射鏡となるキャビティを形成することなく、一対の対向する電極を持った平板状基板を利用することもできる。 Further, without forming a cavity serving as a reflecting mirror, it is also possible to use a flat substrate having a pair of opposing electrodes. 平板状基板を利用する場合は、孔版印刷法などを利用することによって本発明の発光装置を形成させることができる。 When using a flat substrate, it is possible to form a light-emitting device of the present invention by utilizing such a stencil printing method. このようなパッケージは、液晶ポリマーなど各種樹脂やガラスエポキシ樹脂基板、セラミック基板など所望に応じて種々のものを利用することができる。 Such packages, various resins, glass epoxy resin substrate such as a liquid crystal polymer, can be used various ones depending on the desired and ceramic substrate.
【0015】 [0015]
本実施態様例1では図1の断面図に示すように表面に凹部となるキャビティ104を持ち、キャビティ104内部には一対の対向するリード電極105が露出したパッケージを利用した。 It has a cavity 104 as a concave portion on the surface as shown in the sectional view of this embodiment example 1 in FIG. 1, the internal cavity 104 using a package lead electrode 105 is exposed to a pair of opposed. 一対の対向するリード電極105は上述の鉄入り銅などの金属平板を利用して形成させてある。 The lead electrodes 105 to a pair of opposed are then formed using a flat metal plate such as the above-mentioned iron-containing copper. リード電極105はキャビティ104底面側からパッケージの側面まで延在しており外部からの電流を発光素子となるLEDチップ106に供給する働きをする。 Lead electrode 105 serves to supply a current from the outside extends from the cavity 104 bottom side to the side of the package to the LED chip 106 as a light emitting element.
【0016】 [0016]
LEDチップ106からの発光によって蛍光体101を励起させるためには、LEDチップ106からの光の方が蛍光体101から放出される光よりも短波長の方が効率よい。 To excite the phosphor 101 by the light emission from the LED chip 106, towards the short wavelength better efficiency than the light towards the light is emitted from the phosphor 101 from the LED chip 106. そのため、LEDチップ106としては種々の材料や構造を利用することができるが、高効率に発光輝度の高い可視光を発光可能な半導体素子として、窒化物半導体(In x Ga y Al 1-xy N、0≦x≦1、0≦y≦1)を発光層に利用したものが好適に挙げられる。 Therefore, As the LED chip 106 may utilize a variety of materials and structures, as capable of emitting semiconductor elements high visible light emission luminance with high efficiency, a nitride semiconductor (In x Ga y Al 1- xy N , it is preferably exemplified those used in the light-emitting layer 0 ≦ x ≦ 1,0 ≦ y ≦ 1). 窒化物半導体を利用した発光素子はサファイア基板、スピネル基板やSiC、GaN単結晶などの上に形成させることができるが、量産性と結晶性を満たすものとしてサファイア基板上に低温バッファ層を介してn型及びp型の窒化物半導体を有するものが好ましい。 Light-emitting elements using nitride semiconductor sapphire substrate, a spinel substrate or SiC, may be formed on such a GaN single crystal, through a low-temperature buffer layer on a sapphire substrate as meeting the crystallinity and productivity those having n-type and p-type nitride semiconductor is preferable. n型及びp型の窒化物半導体を絶縁基板であるサファイア基板上に形成した場合、エッチングによりn型及びp型の窒化物半導体を露出させ同一面側に各電極を形成させる。 If the n-type and p-type nitride semiconductor formed on a sapphire substrate which is an insulating substrate, exposing the nitride semiconductor of the n-type and p-type to form the respective electrodes on the same side by etching.
【0017】 [0017]
こうして形成されたLEDチップ106をパッケージ内部にエポキシ樹脂を用いてダイボンド固定すると共にパッケージに設けられたリード電極105と、LEDチップの各電極とをそれぞれ金線を用いてワイヤボンディングさせる(図1(A))。 Thus the lead electrode 105 provided on the package with the LED chip 106 formed is die-bonded fixed using a package inside the epoxy resin, is wire bonding using respectively a gold wire and the electrode of the LED chip (FIG. 1 ( A)). なお、リード電極と発光素子との電気的接続はワイヤーのほか、フリップチップ型の発光素子の場合、半田やAgペーストなどを利用して電気的に接続させることもできる。 Incidentally, the electrical connection between the lead electrode and the light emitting element other wires, in the case of flip-chip light emitting device may be electrically connected by using a solder or Ag paste.
【0018】 [0018]
他方、本発明に用いられる蛍光体101は可視光が発光可能な発光素子106からの発光を吸収し、可視光が発光可能な種々のものを利用することができる。 On the other hand, the phosphor 101 used in the present invention absorbs the light emission from the visible light emitting capable emitting element 106 may be visible light to use any of various possible emission. 特に、LEDチップ106からの青色可視光と、蛍光体101からの黄色の可視光との混色を利用した白色系が発光可能な発光ダイオードを構成する場合、ZnS:Ag,ClやZnS:Cu,AlなどのZnS系蛍光体(比重4〜5)やYAG:CeなどのYAG(Y 23・5/3Al 23 )系蛍光体(比重4から7)などを利用することができる。 Particularly, when constituting the visible blue light, a yellow white light emission can emitting diode utilizing the mixture of the visible light from the phosphor 101 from the LED chip 106, ZnS: Ag, Cl or ZnS: Cu, ZnS-based phosphor such as al (specific gravity 4-5) and YAG: YAG such Ce (Y 2 O 3 · 5 / 3Al 2 O 3) based phosphor (specific gravity 4 7) or the like can be used.
【0019】 [0019]
他にも青色、青緑色や緑色を吸収して赤色が発光可能な蛍光体としては、Eu及び/又はCrで付活されたサファイヤ(酸化アルミニウム)蛍光体やEu及び/又はCrで付活された窒素含有CaO-Al 23 -SiO 2蛍光体(オキシナイトライド蛍光硝子)などが挙げられる。 Other blue also, as the blue-green or green and absorbs red capable of emitting phosphor, sapphire (aluminum oxide), which is activated by Eu and / or Cr is activated phosphor and Eu and / or Cr nitrogen-containing CaO-Al 2 O 3 -SiO 2 phosphor (oxynitride fluorescent glass) and the like. これらの蛍光体を利用して発光素子からの光と蛍光体からの光の混色により白色光を得ることもできる。 The mixing of light from light and phosphor from the light emitting element by utilizing these phosphors can be obtained white light. なお、本発明の比重差を満たす限り蛍光顔料だけでなく蛍光染料を利用することもできる。 It is also possible to use a fluorescent dye not only fluorescent pigments as long as it satisfies the difference in specific gravity between the present invention. 蛍光染料である有機蛍光体は無機蛍光体と比較して一般的に発光効率が高い。 Organic phosphor is a fluorescent dye generally has high luminous efficiency compared to inorganic phosphors. しかしながら、比重差を大きくとることが難しく量産性を考慮すると蛍光顔料の方が好ましい。 However, towards the consideration of the fluorescent pigment is difficult mass production to a large difference in specific gravity is preferred. なお、有機系光染料を利用する場合は、ペリレン系誘導体などを好適に利用することができる。 In the case of use of organic optical dye it can be suitably used such as perylene derivatives. なお、これらの蛍光体を適宜組み合わせて所望の演色性や色を得ることもできる。 It is also possible to obtain the desired color rendering and color combination of these phosphors as appropriate.
【0020】 [0020]
本発明の蛍光体は形成時に蛍光体を含有させる透光性モールド部材、蛍光体の色を見かけ上なくす光拡散剤との比重差を利用するため種々選択することができる。 Phosphor of the present invention is translucent mold member that contains a fluorescent material during the formation, it can be variously selected to utilize the difference in specific gravity between the light diffusing agent to eliminate the apparent color of the phosphor. また、形成時の量産性をさらに向上させるためには、蛍光体101及び光拡散剤102が含有される透光性モールド部材103の粘度や蛍光体101の粒径が影響する。 Further, in order to further improve the mass productivity of the formation, the particle size of the viscosity and the phosphor 101 of the translucent mold member 103 in which the phosphor 101 and a light diffusing agent 102 is contained affects. すなわち、透光性モールド部材103となる材料の粘性が低い場合や、蛍光体101の粒径が大きい場合は透光性モールド部材103となる材料との比重差による分離沈降が促進する傾向にある。 That is, when the viscosity of the material to be translucent mold member 103 is low or when the particle size of the phosphor 101 is large tends to promote separation precipitation with specific gravity difference with the material to be translucent mold member 103 . また、粉砕工程での結晶破壊などにより、無機蛍光体101では粒径が小さくなると変換効率が低下する傾向にある。 Further, due to the crystal destruction in the grinding step, and the conversion efficiency particle size in the inorganic phosphor 101 is small tends to decrease. さらに、あまり小さくなりすぎると凝集体を構成するために透光性モールド樹脂部材中への分散性が低下し発光装置からの色むらや輝度むらを引き起こす傾向にある。 Furthermore, there is a tendency to cause color unevenness and brightness unevenness from the light emitting device dispersibility in translucent molding resin member in drops to configure the agglomerates with too much reduced.
【0021】 [0021]
そのため、透光性モールド部材103の材料や蛍光体101にもよるが、蛍光体101の平均粒径は1〜100μmが好ましく、5〜20μmがより好ましい。 Therefore, although depending on the material and the phosphor 101 of the translucent mold member 103, the average particle size of the phosphor 101 is preferably 1 to 100 [mu] m, 5 to 20 [mu] m is more preferable. 本発明に用いられる具体的蛍光体101として、Ceで付活されたYAG系蛍光体(Y、Lu、Sc、La、Gd及びSmから選ばれた少なくとも1つの元素と、Al、Ga及びInからなる群から選ばれた少なくとも1つの元素とを含んでなるセリウムで付活されたガーネット系蛍光体)を挙げる。 Specific phosphor 101 used in the present invention, activated with YAG phosphor with Ce (Y, Lu, Sc, La, and at least one element selected from Gd, and Sm, Al, Ga, and In comprising at least one element and activated by comprising at cerium garnet phosphor selected from the group) listed. YAG系蛍光体はY、Gd、Ceの希土類元素を化学量論比で酸に溶解した溶解液を蓚酸で沈降させる。 YAG-based phosphor is Y, Gd, precipitated with oxalic acid the solution, which is obtained by dissolving rare earth elements of Ce in an acid in a stoichiometric ratio. これを焼成して得られる共沈酸化物と酸化アルミニウムを混合して混合原料を得る。 Obtaining a mixed raw material by mixing coprecipitated oxide and aluminum oxide obtained by firing this. これにフラックスとしてフッ化アンモニウムを混合して坩堝に詰め、空気中1400℃の温度で170分焼成して焼成品を得た。 This packed in a crucible a mixture of ammonium fluoride as a flux, to obtain a calcined product by calcining 170 minutes at a temperature in air 1400 ° C.. 焼成品を水中でボールミルして洗浄、分離、乾燥、最後に篩を通してYAG系蛍光体を形成させることができる。 The fired product washed ball mill in water, separation, drying, and finally it is possible to form a YAG-based phosphor through a sieve. 本実施態様例1のYAG系蛍光体としては、(Y 0.8 Gd 0.2 ) 3 Al 512 :Ceを利用する。 The YAG-based phosphors of the present embodiments Example 1, (Y 0.8 Gd 0.2) 3 Al 5 O 12: utilize Ce. この蛍光体101の比重は約5.0であり、平均粒径は5μmであった。 The specific gravity of the phosphor 101 is about 5.0, the average particle size was 5 [mu] m.
【0022】 [0022]
同様に、本発明に用いられる他の具体的蛍光体として、Eu及び/又はCrで付活された窒素含有CaO-Al 23 -SiO 2蛍光体が挙げられる。 Similarly, as another specific phosphor used in the present invention, Eu and / or activated nitrogen-containing CaO-Al 2 O 3 -SiO 2 phosphors Cr and the like. このEu及び/又はCrで付活された窒素含有CaO-Al 23 -SiO 2蛍光体は、酸化アルミニウム、酸化イットリウム、窒化珪素及び酸化カルシウムなどの原料に希土類原料を所定比に混合した粉末を窒素雰囲気下において1300℃から1900℃(より好ましくは1500℃から1750℃)において溶融し成形させる。 The Eu and / or Cr with activated nitrogen-containing CaO-Al 2 O 3 -SiO 2 phosphors, aluminum oxide, yttrium oxide, powder mixed in the raw material such as silicon nitride and calcium oxide a rare earth material in a predetermined ratio melted is molded at 1900 ° C. from 1300 ° C. under a nitrogen atmosphere (more preferably 1750 ° C. from 1500 ° C.). 成形品をボールミルして洗浄、分離、乾燥、最後に篩を通して蛍光体を形成させることができる。 Washing the formed article with a ball mill, separated, dried, and finally it is possible to form a phosphor through a sieve. これにより450nmにピークをもった励起スペクトルと約650nmにピークがある青色光により赤色発光が発光可能なEu及び/又はCrで付活されたCa-Al-Si-O-N系オキシナイトライド蛍光硝子とすることができる。 Ca-Al-Si-O-N-based oxynitride fluorescent red light was activated by capable of emitting Eu and / or Cr by blue light having a peak in the excitation spectrum and about 650nm to thereby with a peak at 450nm it can be a glass.
【0023】 [0023]
なお、Eu及び/又はCrで付活されたCa-Al-Si-O-N系オキシナイトライド蛍光硝子の窒素含有量を増減することによって発光スペクトルのピークを575nmから690nmに連続的にシフトすることができる。 Incidentally, continuously shifted 690nm peak of the emission spectrum from 575nm by increasing or decreasing the nitrogen content of activated with Ca-Al-Si-O-N-based oxynitride phosphor glass with Eu and / or Cr be able to. 同様に、励起スペクトルも連続的にシフトさせることができる。 Similarly, the excitation spectra can be continuously shifted. そのため、Mg、Znなどの不純物がドープされたGaNやInGaNを発光層に含む窒化ガリウム系化合物半導体からの光と、約580nmの蛍光体の光の合成光により白色系を発光させることができる。 Therefore, Mg, and light from a gallium nitride based compound semiconductor of GaN or InGaN doped with impurities, such as including the light emitting layer Zn, can emit white by composite light of the light of the phosphor of about 580 nm. 特に、約490nmの光が高輝度に発光可能なInGaNを発光層に含む窒化ガリウム系化合物半導体からなる発光素子との組合せに理想的に発光を得ることもできる。 In particular, it is also possible to obtain an ideal light emission in combination with a light-emitting element approximately 490nm of light becomes capable of emitting InGaN a gallium nitride-based compound semiconductor containing the light-emitting layer with high brightness.
【0024】 [0024]
また、上述のCeで付活されたYAG系蛍光体とEu及び/又はCrで付活された窒素含有Ca-Al-Si-O-N系オキシナイトライド蛍光硝子とを組み合わせることにより青色系が発光可能な発光素子を利用してRGB(赤色、緑色、青色)成分を高輝度に含む極めて演色性の高い発光ダイオードを形成させることもできる。 Further, a blue system by combining the activated with YAG phosphor and Eu and a nitrogen-containing been activated with / or Cr Ca-Al-Si-O-N-based oxynitride phosphor glass with the above-described Ce RGB by utilizing the light emission can be light-emitting elements (red, green, blue) can also be formed extremely high CRI LED including the components with high luminance. このため、所望の顔料を添加するだけで任意の中間色も極めて簡単に形成させることができる。 Therefore, it is possible also to very easily form any intermediate color by simply adding the desired pigment. 本発明においては何れの蛍光体も無機蛍光体であり、有機の光散乱剤やSiO 2などを利用して高コントラストと優れた量産性が両立した発光ダイオードを形成させることができる。 Phosphor any in the present invention is also a inorganic phosphor, it is possible to form a light-emitting diode high contrast and excellent mass productivity by using such light scattering agent and SiO 2 of the organic is compatible.
【0025】 [0025]
蛍光体101を光拡散剤102と共に透光性モールド部材103となる材料中に含有し攪拌させる。 Contained in the material comprising the fluorescent material 101 and the translucent mold member 103 with the light diffusing agent 102 is stirred. ここで本発明に用いられる光拡散剤102は蛍光体101と比較して比重の軽いものであり、蛍光体101の着色を外部から視認しにくくさせるものである。 Here light diffusing agent 102 used in the present invention has a light specific gravity as compared with the phosphor 101, is intended to difficult to visually recognize the colored phosphors 101 from the outside. したがって、透光性モールド部材103中に含有させることで白色に見えるものや補色関係にある色の光拡散剤102によって灰色や黒の無彩色とすることができる。 Therefore, it can be achromatic gray or black by the color of the light diffusing agent 102 in the white visible objects or complementary relationship be included in the translucent mold member 103.
【0026】 [0026]
光拡散剤102としては、蛍光体101と比重差が大きいものほど量産性に優れる。 As the light diffusing agent 102, excellent mass productivity as those greater difference in specific gravity between the phosphor 101. その中でも透光性モールド部材103の比重よりも小さい光拡散剤102を選択することで、光拡散剤102が透光性モールド部材103の表面に浮いてくる。 By selecting a small light diffusing agent 102 than the specific gravity of the translucent mold member 103 among them, the light diffusing agent 102 comes floating on the surface of the translucent mold member 103. これは蛍光体101が含有された層、実質的に蛍光体101や光拡散剤102が含有されていない透光性となる層、光拡散剤103が含有された層に分離して見える。 This appears to separate into layers layer phosphor 101 is contained, a layer consisting substantially phosphor 101 and the light diffusing agent 102 is not contained translucent, light-diffusing agent 103 is contained. このような見かけ上、3層以上の層構成とすることで蛍光体自体の色を隠蔽する効果が均一に光拡散剤及び蛍光体が含有されたものに比べて良好となる。 Such apparently becomes good as compared with the light diffusing agent effective uniform to hide the color of the phosphor itself and phosphors are contained by the three or more layers structure.
【0027】 [0027]
さらに、LEDチップ106から放出された光は、光拡散剤102が含有された層で反射される。 Further, light emitted from the LED chip 106, the light diffusing agent 102 is reflected by the layer are contained. そのため、蛍光体101が含有された層状に見える部分では、光の光路長が実質的に長くなる。 Therefore, in the portion visible to the layered phosphor 101 is contained, the optical path length of light becomes substantially longer. そのため、光拡散剤を含有させない以外は同様に形成させた発光ダイオードと比べて蛍光体101の含有量を少なくすることもできる。 Therefore, except for not containing a light diffusing agent it may be to reduce the content of the phosphor 101 as compared with the light emitting diodes were formed in the same manner. また、蛍光体101とLEDチップ106から放出される光の混色性が増すことによって、より均一な混色光を得やすくすることができるという優れた特徴を有する。 Further, by it is increased mixing of the light emitted from the phosphor 101 and the LED chip 106, has excellent characteristics of being able to easily obtain a more uniform mixed light. なお、光拡散剤102の選択は比重のみならず屈折率や粒径を選択することによっても大きく変化する。 The selection of the light diffusing agent 102 also varies greatly by selecting the refractive index, particle diameter not the specific gravity only. すなわち、透光性モールド部材103と光拡散剤102との屈折率差が大きくなるに従って、光り取り出し効率が向上する傾向にある。 That is, according to the refractive index difference between the translucent mold member 103 and the light diffusing agent 102 increases, there is a tendency that light extraction efficiency is improved. また、光拡散剤102の粒径が小さいものほど光取り出し効率が向上する傾向にある。 Also, extraction efficiency as those particle diameter of the light diffusing agent 102 is less light tends to be improved. 他方、光拡散剤102の平均粒径が小さくなりすぎると透光性モールド部材103中に多く含有させても透明度が高くなる。 On the other hand, the average particle the diameter is too small translucent transparency be contained much in the mold member 103 of the light diffusing agent 102 increases. そのため、光拡散剤102の平均粒径は0.5μより大きく、10μmより小さいことが好ましい。 Therefore, the average particle diameter of the light diffusing agent 102 is greater than 0.5 [mu], preferably less than 10 [mu] m. 更に好ましくは、平均粒径0.5μmより大きく、5μmより小さいものである。 More preferably, greater than the average particle size 0.5 [mu] m, it is smaller than 5 [mu] m.
【0028】 [0028]
光拡散剤102として具体的には二酸化珪素(比重2.2)、炭酸カルシュウム(比重2.93)、酸化チタン(比重4.26)、酸化亜鉛(比重5.8)、酸化アルミニウム(比重3.9)、チタン酸バリウム(比重5.5)などの無機粉体からなる光拡散剤やエポキシ樹脂(比重1.2)、フェノール・ホルマリン樹脂(比重1.2)、ベンゾグアナミン樹脂(比重1.4)、メラミン樹脂(比重1.4)、アクリル樹脂(比重1.2)、ポリカーボネート樹脂(比重1.2)、ポリエチレン樹脂(比重0.95)、ポリプロピレン樹脂(比重0.9)等の有機物粉体からなる光拡散剤が挙げられる。 Specifically, silicon dioxide as a light diffusion agent 102 (specific gravity 2.2), calcium carbonate (specific gravity 2.93), titanium oxide (specific gravity 4.26), zinc oxide (specific gravity 5.8), aluminum oxide (specific gravity 3 .9), light diffusing agent and an epoxy resin (specific gravity 1.2 consisting of an inorganic powder such as barium titanate (specific gravity 5.5)), phenol-formalin resin (specific gravity 1.2), benzoguanamine resin (specific gravity 1. 4), melamine resin (specific gravity 1.4), acrylic resin (specific gravity 1.2), polycarbonate resin (specific gravity 1.2), polyethylene resin (specific gravity 0.95), polypropylene resin (specific gravity 0.9) organics such as light diffusing agents consisting of powder.
【0029】 [0029]
他方、透光性モールド部材としては発光素子及び蛍光体からの光に対して耐光性が高く、透光性に優れたものが好ましい。 On the other hand, as the translucent mold member high in light resistance to the light from the light emitting element and the phosphor is preferably one excellent in transparency. また、発光素子を被覆する保護膜として働く場合にはある程度の剛性が要求される。 Also, a certain degree of rigidity when acting as a protective film covering the light emitting element is required. 透光性モールド部材の材料として具体的にはエポキシ樹脂(比重1.2)、シリコーン樹脂(比重1.0)、ウレタン樹脂(比重1.2)、不飽和ポリエステル樹脂(比重1.2)、アクリルウレタン樹脂(比重1.2)、ポリイミド樹脂(比重1.3)等の無溶剤、あるいは溶剤タイプの液状透光性熱硬化樹脂が好適に挙げられる。 Specifically, the epoxy resin as the material of the translucent mold member (specific gravity 1.2), silicone resin (specific gravity 1.0), urethane resin (specific gravity 1.2), unsaturated polyester resin (specific gravity 1.2), acrylic urethane resin (specific gravity 1.2), polyimide resin (specific gravity 1.3) No solvents such or solvent type liquid translucent thermosetting resin, are preferably exemplified. 同様に、アクリル樹脂(比重1.2)、ポリカーボネート樹脂(比重1.2)、ポリノルボルネン樹脂(比重1.1)等の溶剤タイプの液状透光性熱可塑樹脂も利用することができる。 Similarly, an acrylic resin (specific gravity 1.2), polycarbonate resin (specific gravity 1.2), solvent type liquid translucent thermoplastic resin such as polynorbornene resin (specific gravity 1.1) can be utilized. さらに、有機物だけでなく二酸化珪素などの無機物やゾル−ゲル法にて形成した二酸化珪素及びアクリル樹脂などを混合したハイブリッド樹脂も好適に利用することができる。 Further, inorganic or sol such as silicon dioxide as well as organic matter - a hybrid resin including a mixture of silicon dioxide and an acrylic resin were formed by gel method can also be suitably used.
【0030】 [0030]
透光性モールド部材103が発光装置の最表面側に設けられ外部環境から内部を保護する必要がある場合には、無用剤タイプの液状熱硬化性樹脂を好適に利用することができる。 When the translucent mold member 103 is required to protect the inside from the external environment is provided on the outermost surface side of the light emitting device can be suitably used solventless type liquid thermosetting resin. 他方、透光性モールド部材103を更に樹脂などで被覆する場合などは透光性モールド部材103との密着性を考慮して上述で記載した樹脂を種々選択して利用することができる。 On the other hand, such as when coating translucent mold member 103 further including a resin may be utilized in selecting various resins described above in consideration of the adhesion between the translucent mold member 103.
【0031】 [0031]
具体的には、光拡散剤102としてメラミン樹脂(比重1.4)を蛍光体として(Y 0.8 Gd 0.2 ) 3 Al 512 :Ce(比重5.1)、透光性モールド部材としてエポキシ樹脂(比重1.2)中に含有させて攪拌させる。 Specifically, light as diffusing agent 102 melamine resin (specific gravity 1.4) as the phosphor (Y 0.8 Gd 0.2) 3 Al 5 O 12: Ce ( specific gravity 5.1), epoxy resin as the translucent mold member is stirred is contained in (specific gravity 1.2). このときのエポキシ樹脂の粘度は700cpである。 The viscosity of the epoxy resin at this time is 700 cP. この状態では蛍光体と光拡散剤は透光性モールド部材となる樹脂中でほぼ均一に分散するように混ぜてある。 Phosphor and a light diffusing agent in this state are mixed so as to be substantially uniformly dispersed in the resin as a translucent mold member.
【0032】 [0032]
あらかじめ発光素子とリード電極とを電気的に接続し固定させたパッケージのキャビティ内に光拡散剤及び蛍光体が混合攪拌されたエポキシ樹脂を滴下させる。 It is added dropwise advance light emitting element and the epoxy resin where the light diffusing agent and phosphors are mixed and stirred to lead electrodes and the inside of the electrically connecting package is fixed cavity. この直後の発光装置の模式的断面図を図1(B)に示す。 A schematic cross-sectional view of the right after the light emitting device shown in FIG. 1 (B). これを85℃180分の一次硬化、140℃240分の二次硬化によって発光装置を形成させた。 This 85 ° C. 180 minutes in the primary curing, to form a light-emitting device by secondary curing of 140 ° C. 240 minutes. 形成された発光装置を発光観測面側から観測すると発光観測面側が灰色の無彩色となっており外光が照射されてもコントラスト比が低下することなく見栄えも優れたものであった。 The formed light-emitting device emitting observation surface emission observing surface and observed from the side side even contrast ratio outside light has a neutral gray is irradiated were those look good excellent without lowering.
【0033】 [0033]
なお、形成された発光装置を分析させた結果、図1(C)の断面のごとくキャビティ内部で発光素子に近づくにつれて蛍光体の濃度が高くなると共に光拡散剤は発光素子と対向する表面側で徐々に多くなっている。 Incidentally, a result of the analysis of the formed light-emitting device, a light diffusing agent with the concentration of phosphor increases closer to the light emitting element inside the cavity as the cross-section shown in FIG. 1 (C) on the surface side facing the light emitting element It has become gradually more.
【0034】 [0034]
本発明の発光装置は、光拡散剤を含有させない場合と比較して蛍光体の使用量を少なくさせることができると共に混色性も優れている。 The light emitting device of the present invention is also excellent color mixing property with as compared with the case of not containing a light diffusing agent can be reduced the amount of the phosphor.
(実施態様例2) 蛍光体201としてY 3 Al 512 :Ce、光拡散剤202としてポリカーボネート(比重1.2)、透光性モールド部材103としてアクリル樹脂(比重1.2)を用いて図2の模式的断面図に示す発光装置を形成させることができる。 (Example implementation 2) Y 3 Al 5 O 12 as the phosphor 201: Ce, polycarbonate (specific gravity 1.2) as the light diffusing agent 202, using an acrylic resin (specific gravity 1.2) as the translucent mold member 103 thereby forming a light-emitting device shown in a schematic cross-sectional view of FIG. この発光装置200は上述の蛍光体201及び光拡散剤202を透光性モールド部材となる材料中に混ぜた後、スクリーン印刷した。 The light emitting device 200 was mixed in a material comprising a phosphor 201 and a light diffusing agent 202 described above the translucent mold member, and screen printing. この状態で透光性モールド部材203となる材料を硬化させ孔版(不示図)を外すことによって発光装置を形成させることができる。 Thereby forming a light-emitting device by removing the stencil (not 示図) curing the material for the translucent mold member 203 in this state. 実施態様例2の発光装置は、実施態様例1と同様コントラスト比の高い発光装置とすることができる。 The light emitting device of the embodiment example 2 may be a light-emitting device with high same contrast ratio as in embodiment example 1. なお、図2中の発光素子206はSiC基板上に形成させた発光層がInGaNからなる青色が発光可能なLEDチップであり、LEDチップ206の各電極とリード電極205とをそれぞれ導電性ワイヤとして金線207及びAgペースト208を用いて電気的に接続させてある。 The light-emitting element 206 in FIG. 2 is a blue emitting LED capable chip made luminescent layer formed on the SiC substrate from InGaN, with each electrode and the lead electrode 205 of the LED chip 206 as respective conductive wires It is then electrically connected with a gold wire 207 and the Ag paste 208. なお、本発明においては、チップタイプLEDについて詳述したが、ランプタイプLEDにも適用できることはいうまでもない。 In the present invention, have been described in detail chip type LED, it can also be applied to a lamp type LED.
(実施態様例3) 同じ励起光源の可視発光スペクトルで異なる色が発光可能な2種類の蛍光体を用いた以外は、実施態様例2と同様にして発光装置を形成させた。 Except that (embodiment example 3) different colors in the visible emission spectrum of the same excitation light source using a light emitting possible two phosphors to form a luminescent device in the same manner as in embodiment example 2. 2種類の蛍光体は、粒径が7.3μmである(Y 0.995 Gd 0.0053 Al 512 :Ce 0.25と、Eu及びCrで付活された窒素含有CaO-Al 23 -SiO 2蛍光体を用いている。 Two phosphor particle sizes of 7.3μm (Y 0.995 Gd 0.005) 3 Al 5 O 12: Ce 0.25 and, Eu and nitrogen containing been activated with Cr CaO-Al 2 O 3 -SiO 2 We are using the phosphor. この発光装置は、実施態様例2よりも高いコントラスト比を得られる発光装置とすることができる。 The light emitting device may be a light emitting device obtained a high contrast ratio than the example embodiment 2. これは蛍光体ボディーカラーである黄色と赤色が混ざるためと考えられる。 This may be because the mixed yellow and red is a fluorescent body color. なお、本実施態様例の発光装置は実施態様例2よりも演色性が高くピンクの顔料を混合させることによって中間色も高輝度に発光させることができる。 The light emitting device of the present embodiment example can be neutral also emit light with high luminance by mixing pink pigment high color rendering properties than example embodiment 2.
【0035】 [0035]
【発明の効果】 【Effect of the invention】
量産性よく、均一性の高い蛍光体を利用した発光装置を形成させることができる。 Mass productivity good, it is possible to form utilizing high uniformity phosphor emitting device. また、光拡散剤含有の樹脂と蛍光体含有の樹脂を別々に形成させた場合に比べ形成させた発光装置の均一性が高まる傾向にある。 Further, there is a tendency that uniformity of a light emitting device was formed compared to the case where the light diffusing agent containing the resin and the phosphor-containing resin is formed separately is increased. これは順次形成する場合、樹脂粘度の経時変化などによる量のばらつきが本発明では全く生じないためと考えられる。 If this is sequentially formed, the amount of variation due to aging of the resin viscosity is considered to be because not at all occur in the present invention. また、本発明は、蛍光体の使用量も減すことができるという優れた特徴を持ったものである。 Further, the present invention having the excellent feature that can lessen also the amount of the phosphor.
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】 図1は本発明の模式的断面図を示す。 FIG. 1 shows a schematic cross-sectional view of the present invention.
【図2】 図2は別の本件発明の模式的断面図を示す。 Figure 2 shows a schematic cross-sectional view of another present invention.
【符号の説明】 DESCRIPTION OF SYMBOLS
100、200…発光装置101、201…蛍光体102、201…光拡散剤103、203…透光性モールド部材104…キャビティ105、205…リード電極106、206…LEDチップ107、207…導電性ワイヤー108…硬化させた導電性ペースト 100, 200 ... light-emitting device 101, 201 ... phosphor 102 and 201 ... light diffusing agent 103, 203 ... translucent mold member 104 ... cavity 105, 205 ... lead electrodes 106, 206 ... LED chips 107, 207 ... conductive wire 108 ... cured conductive paste

Claims (4)

  1. 可視光を発光する半導体発光素子と、 A semiconductor light emitting element emits visible light,
    前記半導体発光素子を被覆する透光性モールド部材と、 A light-mold member permeable covering the semiconductor light emitting element,
    前記透光性モールド部材に含有させた前記半導体発光素子からの可視光を吸収して、その可視光よりも長波長の可視光を発光する有彩色蛍光体と、 By absorbing visible light from the semiconductor light emitting element is contained in the light-transmitting mold member, a chromatic color phosphor thereof than visible light to emit visible light of longer wavelength,
    光拡散剤と、 And a light diffusing agent,
    を有し、前記半導体発光素子からの光と前記蛍光体からの光との混色光を発光する発光装置であって、 The a, a light-emitting device for emitting mixed color light of the light from the light with the phosphor from the semiconductor light emitting element,
    前記蛍光体は、前記透光性モールド部材及び前記光拡散剤よりも大きい比重を有すると共に、 The phosphor which has a greater specific gravity than the light-transmitting mold member and the light diffusing agent,
    前記透光性モールド部材において、前記蛍光体の濃度は前記半導体発光素子に近づくにつれて高くなり、これと反対に前記光拡散剤の濃度は前記半導体発光素子と対向する前記モールド部材表面側に近づくにつれて徐々に高くなり、 前記光拡散剤の濃度が高い光拡散剤層が形成され、 In the translucent mold member, as the concentration of the phosphor becomes higher closer to the semiconductor light emitting device, which the concentration of the light diffusing agent as opposed to closer to the mold member surface facing the semiconductor light emitting element gradually increases, the concentration is higher the light diffusing agent layer of the light diffusing agent is formed,
    前記蛍光体の平均粒径は1μm以上100μm以下であり、前記光拡散剤の平均粒径は0.5μm以上10μm以下であり、前記蛍光体の平均粒径は前記光拡散剤の平均粒径よりも大きく、 The average particle diameter of the phosphor is at 1μm or more 100μm or less, an average particle diameter of the light diffusing agents are 0.5μm or 10μm or less, an average particle diameter of the phosphor than the average particle size of the light diffusing agent larger,
    前記光拡散剤層は、外部からの光を反射すると共に、前記半導体発光素子及び前記蛍光体からの光を散乱させ外部に光を放出し、 The light diffusing agent layer is adapted to reflect light from the outside, and emit light to the outside to scatter the light from the semiconductor light emitting element and the phosphor,
    前記蛍光体及び前記光拡散剤を有する透光性モールド部材は、外部からの光により無彩色に視認されることを特徴とする発光装置。 The phosphor and the translucent mold member having a light diffusing agent, a light-emitting device characterized in that it is visible achromatic by light from the outside.
  2. 前記蛍光体は、Ceで付活されたY ・5/3Al 系蛍光体、 並びにEu及びCrの少なくともいずれか一方で付活された窒素含有CaO−Al −SiO 蛍光体から選択される少なくとも1種である請求項1に記載の発光装置。 The phosphor activated with Y 2 O 3 · 5 / 3Al 2 O 3 phosphor in Ce, and nitrogen-containing CaO-Al 2 O 3 -SiO that are at least activated in any one of Eu and Cr the light emitting device according to claim 1 is at least one selected from the second phosphor.
  3. 前記蛍光体は、前記半導体発光素子の光で、それぞれ異なる発光色及び異なるボディーカラーを有する少なくとも2種類の蛍光体である請求項1に記載の発光装置。 The phosphor, the semiconductor with light of light emitting element, a light-emitting device according to claim 1 is at least two kinds of phosphors having different emission colors and different body color, respectively.
  4. 可視光を発光する半導体発光素子と、前記半導体発光素子を被覆する透光性モールド部材と、前記透光性モールド部材に含有させた前記半導体発光素子からの可視光を吸収して、その可視光よりも長波長の可視光を発光する有彩色蛍光体と、光拡散剤と、を有し、前記半導体発光素子からの光と前記蛍光体からの光との混色光を発光する発光装置の形成方法であって、 A semiconductor light emitting element emits visible light, absorbs the light-transmitting mold member covering the semiconductor light-emitting device, the visible light from the semiconductor light emitting element is contained in the light-transmitting mold member, the visible light a chromatic color phosphor emitting visible light of longer wavelength than has a light diffusing agent, the formation of the light emitting device for emitting mixed light of the light from the light with the phosphor from the semiconductor light emitting element there is provided a method,
    前記蛍光体の平均粒径は1μm以上100μm以下であり、前記光拡散剤の平均粒径は0.5μm以上10μm以下であり、前記蛍光体の平均粒径は前記光拡散剤の平均粒径よりも大きい蛍光体及び光拡散剤を用いて、 The average particle diameter of the phosphor is at 1μm or more 100μm or less, an average particle diameter of the light diffusing agents are 0.5μm or 10μm or less, an average particle diameter of the phosphor than the average particle size of the light diffusing agent using large phosphor and a light diffusing agent also
    前記透光性モールド部材となる材料中に、前記光拡散剤と、前記透光性モールド部材及び前記光拡散剤よりも比重が大きい蛍光体とを、ほぼ均一に分散させる工程と、 Wherein a in the material made translucent mold member, and the light diffusing agent, the fluorescent substance and the specific gravity is greater than the light-transmitting mold member and the light diffusing agent, a step of substantially uniformly dispersed,
    前記半導体発光素子上に、前記光拡散剤及び前記蛍光体が含有された前記透光性モールド部材となる材料を被覆させる工程と、 On the semiconductor light emitting element, a step of coating a material in which the light diffusing agent and the phosphor is the light-transmitting mold member which is contained,
    前記透光性モールド部材となる材料の粘度を低下させ、前記蛍光体の濃度を前記半導体発光素子に近づくにつれて高くし、これと反対に前記光拡散剤の濃度を前記半導体発光素子と対向する前記透光性モールド部材表面側に近づくにつれて徐々に高くさせて、前記光拡散剤の濃度が高い光拡散剤層を形成させた後 、硬化させる工程と、 The reduced viscosity of the material which becomes translucent mold member, the concentration of the phosphor is increased closer to the semiconductor light emitting device, which the concentration of the light diffusing agent to face the semiconductor light emitting element opposite the It is gradually increased toward the translucent mold member surface, after the concentration of the light diffusing agent to form a high light diffusing agent layer, and curing,
    を有する発光装置の形成方法。 Method of forming a light emitting device having a.
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