WO2008139981A1 - Light emitting device and package assembly for light emitting device - Google Patents

Light emitting device and package assembly for light emitting device Download PDF

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Publication number
WO2008139981A1
WO2008139981A1 PCT/JP2008/058443 JP2008058443W WO2008139981A1 WO 2008139981 A1 WO2008139981 A1 WO 2008139981A1 JP 2008058443 W JP2008058443 W JP 2008058443W WO 2008139981 A1 WO2008139981 A1 WO 2008139981A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
lower electrode
metal substrate
substrate
Prior art date
Application number
PCT/JP2008/058443
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroshi Fushimi
Original Assignee
C.I. Kasei Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by C.I. Kasei Company, Limited filed Critical C.I. Kasei Company, Limited
Priority to JP2009514124A priority Critical patent/JPWO2008139981A1/en
Priority to CN200880015205XA priority patent/CN101681960B/en
Publication of WO2008139981A1 publication Critical patent/WO2008139981A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers

Definitions

  • the present invention relates to a light emitting device in which upper and lower electrode type light emitting diodes are provided on a substrate comprising a metal substrate and a ceramic substrate in contact with the metal substrate.
  • the present invention relates to a package assembly for a light emitting device having a ceramic substrate fitting hole for fitting the metal substrate and a ceramic substrate in contact with the metal substrate.
  • the present invention relates to a conductive connecting member for connecting an upper electrode of the upper and lower electrode type light emitting diode and a conductive film provided on a ceramic substrate.
  • FIGS. 6 (a) to (c) are for explaining a conventional example, and are a light emitting device in which upper and lower electrode type light emitting diodes are provided inside a reflection frame.
  • the lower electrode of the upper and lower electrode type light emitting diode 63 is joined on one metal substrate 61.
  • the upper electrode of the upper and lower electrode type light emitting diode 63 is joined to the other metal substrate 62 by a conductive connecting member 64.
  • the one metal substrate 61 is separated from the other metal substrate 62 by an insulating member or space 67.
  • the separated metal substrates 6 1 and 6 2 are integrally held by a reflection frame 6 6.
  • the upper and lower electrode type light emitting diodes 63 are sealed in the reflection frame 66 by a sealing material 68.
  • the sealing material 68 is filled up to the upper surface of the reflective frame 66, and a fluorescent film 69 is formed thereon.
  • the light emitting device described in Japanese Patent Application Laid-Open No. 2 0 7-2 7 5 8 5 is a wire bonding method using ultrasonic waves or the like when connecting the upper electrode of the upper and lower electrode type light emitting diode and the other metal substrate. Is used.
  • the light emitting device does not cause an accident such as cutting due to vibration of the wire bonding
  • the upper and lower electrode type light emitting diodes are sealed with a sealing material, and then a phosphor layer is provided on the sealing material.
  • a space portion 6 81 is formed between the sealing material and the fluorescent film.
  • the air in the space 6 81 expands due to heat generated from the light emitting diode, there is no escape path, and the phosphor film cracks or turns.
  • the light emitting diode does not fill the entire reflective frame with the sealing material, but when only the upper part is sealed, the distance of light passing through the phosphors of different colors is different, resulting in uneven color. Does not emit light in the desired color.
  • the light-emitting diode attached to the metal substrate with slits shown in FIG. 6 is sealed with a transparent resin, and a material with high hardness is used to give strength to the transparent resin. .
  • the high-hardness sealing material has a problem that the thermal stress generated from the light emitting diode is large. The thermal stress may break the wiring that supplies power to the light emitting diode.
  • the sealing material and the fluorescent film, and the fluorescent film and the transparent protective film are bonded to each other in a semi-cured state.
  • the sealing material, the fluorescent film, and the transparent protective film are each well bonded, but when being in a cured state, stress due to shrinkage is applied. That is, the sealing material is bent during the contraction. Since the fluorescent film is pulled along with the bending of the sealing material, the fluorescent film may be cracked, turned up, or ruptured.
  • the light emitting device is separated between the metal substrates 61, 62 by a transparent insulating member 67.
  • the insulating member 67 has reduced efficiency because light emitted from the upper and lower electrode type light emitting diodes 63 escapes.
  • a method for manufacturing a plurality of light emitting diodes in large quantities is that a desired number of light emitting diodes can be attached by cutting a lead frame after attaching a predetermined member to a predetermined location using a lead frame.
  • the light emitting device includes a substrate, a light emitting diode, and a light emitting diode.
  • There are different members such as diode electrode and lead wire, reflection frame and substrate. In order to optimize the various installations, it was necessary to strictly control the temperature. If the temperature control is not sufficient, the light emitting diode is often adversely affected. Disclosure of the invention
  • the present invention provides a phosphor-containing film by the above-described stress or by the expansion of air accumulated in a space formed between the sealing material and the phosphor-containing film.
  • An object of the present invention is to provide a light-emitting device with excellent luminous efficiency that does not crack or turn up.
  • An object of the present invention is to provide a light-emitting device that is excellent in mass productivity, can withstand a large current and thermal stress, and is maintained at high strength.
  • An object of the present invention is to provide a package assembly for a light emitting device suitable for mass production having a fitting hole for fitting a metal substrate and a ceramic substrate.
  • the light emitting device includes a substrate in which a metal substrate and a ceramic substrate having a conductive film formed at least on the upper surface are in contact with each other, and a bottom portion extending over the metal substrate and the ceramic substrate.
  • a reflective frame made of an insulating member having an opening bonded to a substrate; at least one vertical electrode type light emitting diode having a lower electrode attached to a metal substrate inside the reflective frame; and the vertical electrode type At least one conductive connecting member connecting the upper electrode of the light emitting diode and the conductive film on the ceramic substrate; the metal substrate; the lower electrode of the upper and lower electrode type light emitting diode; and the upper portion of the upper and lower electrode type light emitting diode.
  • the electrode and the conductive connecting member, and the solder that joins the conductive connecting member and the conductive film are at least configured. .
  • the light emitting device of the present invention is characterized in that the substrate, the reflection frame, at least one upper and lower electrode type light emitting diode, at least one conductive connecting member, and a plurality of light emitting portions made of solder are formed. .
  • the conductive connecting member has at least one gold wire rib. It is composed of Bonn.
  • the metal substrate is a metal substrate with a heat sink, and the thickness of the metal substrate is substantially equal to that of the ceramic substrate.
  • the light-emitting device of the present invention is characterized in that the light-emitting portions are connected in series, parallel, or series-parallel.
  • the light emitting device of the present invention is characterized in that a material for sealing the upper and lower electrode type light emitting diodes is provided in the reflection frame.
  • a fluorescent film containing at least one phosphor that converts light emitted from the upper and lower electrode type light emitting diodes into almost white light is attached in the reflection frame or on the upper surface of the reflection frame. It is characterized by being.
  • a package assembly for a light emitting device according to the present invention includes a plurality of metal substrates connected by connecting portions, a metal substrate assembly in which a ceramic substrate fitting portion is provided on one of the metal substrates, and the respective fittings.
  • a ceramic substrate having a conductive film formed on at least the upper portion thereof, and a pair of the metal substrates and an insulating member having an opening bonded to the bottom so as to straddle the ceramic substrate.
  • the package assembly for a light emitting device is characterized in that it is composed of at least a reflection frame.
  • the package assembly for a light emitting device according to the present invention is characterized in that the lead connection portion is composed of a lead connection portion, and a lead connection portion is provided on three sides of the metal substrate.
  • the package assembly for a light emitting device is characterized in that the lead connecting portion is provided with a weak portion and can be easily separated.
  • the package assembly for a light emitting device is characterized in that the lead connection portion is provided with a cutting portion made of a groove having a depth controlled by bottom dead center control.
  • a light emitting portion or the like is provided on a substrate in which a metal substrate and a ceramic substrate are in contact with each other on one side.
  • the ceramic substrate has a conductive film formed on at least the top.
  • the bottom of the reflection frame made of an insulating member having an opening is bonded with an adhesive such as a thermosetting resin so as to straddle the metal substrate and the ceramic substrate.
  • an adhesive such as a thermosetting resin
  • At least one plate-like conductive connecting member joins the upper electrode of the upper and lower electrode type light emitting diode and the conductive film on the ceramic substrate.
  • the metal substrate and the lower electrode of the upper and lower electrode type light emitting diode, the upper electrode of the upper and lower electrode type light emitting diode and the conductive connecting member, and the conductive connecting member and the conductive film are simultaneously bonded by solder.
  • the upper and lower electrodes of the upper and lower electrode type light emitting diode, the metal substrate, the conductive connection member, the conductive film, etc. are connected by solder, solder paste, solder and flux, gold-tin eutectic solder paste, indium-based eutectic solder, etc.
  • solder is, for example, gold and tin
  • the light-emitting device of the present invention includes a plurality of substrates in which a metal substrate and a ceramic substrate are in contact with each other, and a reflection frame made of an insulating member having an opening corresponding to each of the substrates is the metal substrate and the ceramic substrate. It differs from the said invention in the point which adhere
  • the light emitting device can easily be a linear light source or a surface light source.
  • the conductive connecting member is composed of a substantially rectangular gold wire ribbon.
  • the gold wire ribbon may be formed into a thin strip shape instead of having two arm-shaped connecting portions.
  • the gold wire ribbon has less processing effort, is easy to bend, and is easy to be soldered as compared to a gold-plated copper.
  • the gold wire ribbon can be easily soldered. This narrow width has the advantage of not only creating shadows of light emitted from the upper and lower electrode light emitting diodes, but also allowing large currents to flow reliably.
  • the gold wire ribbon has a width of 0.1 mm to 0.2 mm and a thickness of 0.025 mm.
  • a heat sink is attached to the metal substrate, and the thickness of the ceramic substrate and the metal substrate with the heat sink is substantially the same.
  • the light-emitting device provided on the metal substrate with the heat sink has a high heat dissipation effect and can flow a large current, so that high luminance can be obtained.
  • a plurality of the light emitting units composed of the single reflection frame are connected in series, in parallel, or in series-parallel.
  • By connecting the light emitting units electrically in series, in parallel, or in series-parallel it is possible to easily obtain a light emitting device having a desired brightness or a desired size.
  • a plurality of sets of the light emitting units can be attached in a row shape Z or a column shape, and can be a line light source or a surface light source.
  • a material for sealing the upper and lower electrode type light emitting diodes is filled in the reflection frame.
  • the sealing material can be omitted by using a plate-like conductive connecting member or a gold wire ribbon, but the sealing material can be used in a place where there is vibration.
  • a fluorescent film containing at least one phosphor that converts light emitted from the upper and lower electrode type light emitting diodes into substantially white light is provided in the reflection frame or on the upper surface of the reflection frame. Since the light emitting device provided with the phosphor film converts the light of the upper and lower electrode type light emitting diodes into white, it can be used as a normal lighting device.
  • the upper and lower electrode type light emitting diodes are blue light emitting diodes or ultraviolet light emitting diodes, and in the case of blue light emitting diodes, a fluorescent film containing a phosphor that absorbs blue and develops yellow, or green and red that absorbs blue
  • a phosphor film containing a phosphor that develops color By using a phosphor film containing a phosphor that develops color, almost white light is emitted together with the blue color of the blue light emitting diode. It has become.
  • a phosphor film that contains blue, green, and red phosphors that absorb ultraviolet rays produces a white color, or a phosphor that absorbs ultraviolet rays and develops a blue color. Even when using a phosphor that absorbs the blue light and develops green and red colors, almost white light can be emitted.
  • the package assembly for a light emitting device of the present invention comprises a metal substrate assembly in which a plurality of ceramic substrate fitting holes for fitting a metal substrate and a ceramic are provided.
  • the metal substrate is connected by a connecting portion and connected to a lead frame or another metal substrate.
  • the ceramic substrate is surrounded by a lead connection portion that protrudes from a lead frame or another fitting hole on three sides and the other side of the metal substrate on the other side.
  • the ceramic substrate fitting hole is sized such that one side is in contact with one side of the metal substrate when the ceramic substrate is fitted.
  • the ceramic substrate is formed by forming a conductive film that can be connected to a conductive connecting member, such as a gold wire ribbon, and then attaching a reflective frame having an opening made of an insulating member with a thermosetting resin adhesive. It is done.
  • the reflection frame has a bottom part bonded with an adhesive so as to straddle the metal substrate and the ceramic substrate.
  • the light emitting device package assembly of the present invention has a reinforcing lead portion between the lead connecting portions. By providing it, the strength is increased.
  • the ceramic substrate fitting hole and the predetermined space are punched out by a press or the like. Thereafter, a ceramic substrate prepared in advance is fitted into the ceramic substrate fitting hole.
  • the lead frame is placed on a plate-like member when the ceramic substrate is fitted.
  • the lead frame is a thermosetting resin adhesive having a reflective frame having an opening made of an insulating member so as to straddle the metal substrate and the ceramic substrate after the ceramic substrate is fitted into the ceramic substrate fitting hole. To fix.
  • the lead connection part is preferably provided with a lead-like connection part on three sides of the metal substrate.
  • the lead connection portion is composed of a fragile portion.
  • the fragile portion has a strength capable of being easily separated after completion without being separated when the light emitting portion is manufactured.
  • the package assembly for a light-emitting device includes a cut portion formed by a groove having a depth controlled by bottom dead center control in the lead connection portion when the metal substrate and the ceramic substrate fitting hole are produced. Is provided.
  • the cut portion formed of the groove whose depth is controlled can be easily separated after parts such as upper and lower electrode type light emitting diodes are attached to the metal substrate and ceramic substrate fitting holes.
  • the metal substrate and the ceramic substrate are in contact with each other, and light does not leak from between the metal substrate and the ceramic substrate, so that the light emitting device is highly efficient.
  • the metal substrate and the ceramic substrate are brought into contact with each other, and the reflection frame is attached by the adhesive across the metal substrate and the ceramic substrate. It is firmly held as one package or light emitting device.
  • the upper electrode of the upper and lower electrode type light emitting diode and the conductive film on the ceramic substrate are connected by the plate-like conductive connecting member or the gold wire ribbon, so that the heat dissipation is good and a large current flows.
  • the plate-like conductive connecting member or the gold wire ribbon is more resistant to vibration than the wire bonding, and even if the sealing material is omitted, the connecting portion does not break.
  • a solder having a high melting point is used for each joint, a solder having a low melting point can be used for connection with other printed wiring boards and the like. It is possible to obtain a light emitting device composed of upper and lower electrode type light emitting diodes without vibrations applied to the layers and without defective products.
  • the upper and lower electrode type light emitting diodes are connected in series and Z or in parallel. Since it can be connected in columns, rows, and Z or columns, a light-emitting device having a desired brightness and size can be easily obtained.
  • the upper and lower electrode type light emitting diode can easily obtain light of a desired color in addition to white light only by changing the type of the phosphor or the phosphor-containing film body.
  • FIG. 1 (a) to (c) show a first embodiment of the present invention
  • FIG. 1 (a) is a plan view of the light emitting device
  • FIG. 1 (b) is a sectional view of the light emitting device
  • FIG. (C) is a bottom view of the light emitting device.
  • FIG. 2 is a view for explaining a lead frame provided with a large number of light emitting diode package assemblies.
  • FIGS. 3 (a) to 3 (c) are views for explaining a state in which a lead frame provided with a large number of LED package assemblies and upper and lower electrode type light emitting diodes are attached.
  • FIG. 4 is a view for explaining another lead frame provided with a large number of light emitting diode package coupling bodies.
  • FIG. 6 is for explaining a conventional example, and shows a light emitting device in which upper and lower electrode type light emitting diodes are provided inside a reflection frame.
  • FIGS. 1 (a) to (c) show a first embodiment of the present invention
  • FIG. 1 (a) is a plan view of the light emitting device
  • FIG. 1 (b) is a sectional view of the light emitting device
  • FIG. (C) FIG. 4 is a bottom view of the light emitting device.
  • the size relationship does not always coincide with the actual size in order to make the explanation easy to understand.
  • the metal substrate 11 and the ceramic substrate 12 are composed of one substrate in contact with each other.
  • the bottom of the reflection frame 16 is fixed integrally with the metal substrate 11 and the ceramic substrate 12 with, for example, a thermosetting resin adhesive.
  • the metal substrate 11 is made of, for example, aluminum, copper, iron, or an alloy thereof, and is surface-treated with nickel and silver as necessary.
  • a lower electrode (not shown) is attached to the upper part of the metal substrate 11.
  • the upper electrode 13 1 is provided around the upper part, and the portion connected to the arm of the conductive connecting member 14 described later is wide.
  • the conductive connection member 14 is provided with, for example, an arm-shaped connection portion 14 1 having two arms, and a tip portion of the conductive connection member 14 is connected to the upper electrode 13 1 of the upper and lower electrode type light emitting diode 1 3. Yes.
  • the ceramic substrate 12 is in contact with the metal substrate 11 at one side, and a conductive film 17 is formed on at least a part of the upper surface.
  • the other end of the conductive connecting member 14 is joined to a conductive film 17 provided on the ceramic substrate 12.
  • the reflective frame 16 provided with the reflective portion 1 6 1 is made of, for example, a thermosetting resin adhesive mainly composed of a two-component epoxy resin, or a thermosetting resin adhesive made of a two-component silicone resin.
  • the metal substrate 11 and the ceramic substrate 12 are bonded to each other by an agent. The metal substrate 11 and the ceramic substrate 12 are firmly held by the reflective frame 16 and the adhesive 15 even though they are not bonded at the contact portion.
  • the joint portion can be subjected to gold and / or silver plating in advance.
  • the metal substrate 11 can be subjected to silver and / or gold plating on the entire upper surface, thereby simultaneously achieving three current enhancements: current conductivity improvement, light reflectivity, and joint wettability.
  • the upper / lower electrode type light emitting diode 13 has an opening for emitting light to the upper electrode 13 1, and has a large area portion where the arm-like connection portion 14 1 of the conductive connection member 14 is easily joined. Is formed.
  • the light radiated from the side portion of the upper and lower electrode type light emitting diodes 13 is adapted to be radiated to the outside through an opening formed between the arm-shaped connection portions 14 1, and the light. Is efficiently radiated to the outside.
  • the conductive connecting member 14 is a single strip-shaped plate member instead of providing two arm-shaped connecting portions 14 1, the center of the upper electrode 13 1 of the upper and lower electrode type light emitting diode 13, Can be connected to at least one end. Further, the strip-shaped plate member is made of a gold wire ribbon, so that a large current can flow and it can be easily bent.
  • the reflective frame 16 is filled with a transparent sealing material (not shown) as necessary.
  • the transparent sealing material can be an elastomer type.
  • the elastomer type resin preferably has a hardness of 15 to 85, preferably 20 to 80, as Shah A (rubber hardness).
  • the transparent sealing material is an elastomer made of a silicone resin.
  • the transparent sealing material having the hardness can absorb the thermal stress even when a thermal stress due to a difference in thermal expansion coefficient between the metal substrate 11 and the conductive connecting member 14 is applied.
  • a phosphor-containing film body (not shown) is provided on the surface of the stopper material or the opening of the reflection frame 16.
  • the phosphor-containing film body is selected depending on the upper and lower electrode type light emitting diodes 13 to be used and the desired color of light.
  • a diffuse reflection member is disposed between the transparent sealing material and the phosphor-containing film body, so that light from the upper and lower electrode type light emitting diodes 13 is effectively emitted in a desired direction.
  • the transparent sealing material includes A phosphor can also be contained.
  • the space 2 4 provided around the metal substrate 11 1 (excluding the ceramic substrate fitting hole 1 2 ′) has an opening ratio of 25% to 50%, preferably 30% with respect to the lead frame 21. From% to 45%.
  • the lead frame 21 can reduce the heat capacity of the metal plate itself by increasing the aperture ratio, and since heat is dissipated quickly even when heat treatment such as a reflow furnace is performed, heat to the upper and lower electrode type light emitting diodes can be reduced. The adverse effects of can be eliminated.
  • the frame 2 2 has a plurality of positioning holes 2 2 1 around it.
  • FIGS. 3 (a) to 3 (c) are views for explaining a state in which a lead frame provided with a large number of LED package assemblies and upper and lower electrode type light emitting diodes are attached.
  • the lead frame 31 is composed of a plurality of pairs of metal substrates 11 and ceramic substrate fitting holes 1 2 'in a frame 3 2 by a large number of lead connecting portions 3 1 1.
  • Connect to frame 3 2, other metal substrate 1 1, or ceramic substrate fitting hole 1 2 ′ Has been.
  • the metal substrate 1 1 and the ceramic substrate fitting hole 1 2 ′ are surrounded by a plurality of space portions 3 1 2.
  • the space portion 3 1 2 is provided with at least one lead connection portion 3 1 1, and is connected to the frame 3 2, another metal substrate 1 1, or a ceramic substrate fitting hole 1 2. . Further, the metal substrate 11 and the ceramic substrate fitting hole 1 2 ′ can be provided in the frame 3 2 (lead frame) without using the lead connection portion 3 11.
  • FIG. 4 is a view for explaining another lead frame provided with a large number of light emitting diode package coupling bodies.
  • the lead frame 41 is composed of a plurality of pairs of metal substrates 11 and ceramic substrate fitting holes 1 2 ′ in a frame 4 2. 4 2, connected to another metal substrate 1 1, or to the ceramic substrate fitting hole 1 2 ′.
  • the metal substrate 11 is different from the third embodiment in that the metal substrate 11 is connected to the frame 4 2 or the reinforcing lead connection portion 4 15 by the lead connection portion 4 11.
  • the reinforcing lead connecting portion 4 15 is resistant to strength even if the space portion 4 1 2 is increased.
  • the space part 4 1 2 is provided with at least one lead connection part 4 1 1, the frame 4 2, the other part It is connected to the metal substrate 11 or the ceramic substrate fitting hole 12.
  • the metal substrate 11 and the ceramic substrate fitting hole 12 2 ′ can be provided in the frame 4 2 (lead frame) without the lead connecting portion 4 11.
  • FIGS. 5 (a) to (d) show a fifth embodiment of the present invention
  • FIG. 5 (a) is a plan view of the light emitting device
  • FIG. 5 (b) is an A— of FIG. 5 (a).
  • Fig. 5 (c) is a cross-sectional view of Fig. 5 (c)
  • Fig. 5 (d) is a bottom view.
  • the metal substrate 5 1 and the ceramic substrate 52 are composed of one substrate in contact with each other.
  • the ceramic substrate 52 has a conductive film 17 formed on at least a part of its upper surface.
  • the reflection frame 56 is integrally fixed to the bottom of the reflection frame 56 by, for example, a thermosetting resin adhesive or the like across the metal substrate 51 and the ceramic substrate 52.
  • the metal substrate 51 is made of, for example, aluminum, copper, iron, or an alloy thereof, preferably copper, and is surface-treated with nickel and silver as necessary.
  • a lower electrode (not shown) is attached to the upper part of the metal substrate 5 1 by solder.
  • the upper and lower electrode type light emitting diodes 5 3-1 and 5 3-2 are arranged on the ceramic substrate 5 2 by the upper electrodes of the gold wire replies (or conductive metal foils) 5 4-1 and 5 4-2. For example, it is joined to the conductive film 57 formed by soldering.
  • the upper and lower electrode type light emitting diodes 5 3-1 and 5 3 _ 2 are provided at substantially the center of the reflection frame 5 6, and the number thereof can be arbitrarily increased.
  • a power source (not shown) is connected to the conductive film 5 7 of the metal substrate 5 1 and the ceramic substrate 52, a current flows through the upper and lower electrode type light emitting diodes 5 3-1 and 5 3-2. Flashes.
  • the electrodes of the upper and lower electrode type light emitting diodes have an opening, and light is efficiently irradiated from above to the upper part.
  • the opening can be variously modified in addition to a square shape, such as a character shape, a Japanese character shape, and a U-shape.
  • Upper electrode type light emitting diode The size is 1.5 mmX l .5 mm, 1.0 mm 1-O mm, 0.7 mm X 0.7 mm, or 0.5 mmX 0.5 mm, and the thickness is about 0.1 mm It is.
  • the upper and lower electrode type light emitting diode of this embodiment can be a gallium nitride based upper and lower electrode type light emitting diode.
  • the gallium nitride-based upper / lower electrode type light emitting diode includes a lower electrode, a conductive substrate formed on the lower electrode, an n-type gallium nitride semiconductor layer formed on the substrate, and the n-type gallium nitride semiconductor.
  • a quantum well structure type active layer formed on the layer, a p-type gallium nitride semiconductor layer formed on the quantum well structure type active layer, and formed on the p-type gallium nitride semiconductor layer It consists of an upper partial electrode.
  • the n-type gallium nitride semiconductor layer can also be composed of an upper partial electrode formed on the n-type gallium nitride semiconductor layer.
  • the conventional example uses two gold wires with a diameter of 30 ⁇ m, and ultrasonic vibration of a wire bonder in which the upper electrode of the gallium nitride upper and lower electrode type light emitting diode and the other of the package electrode are connected by ultrasonic wire bonding, Approximately 10% of defective products with poor light emission occurred.
  • connection of the upper and lower electrodes, the metal substrate, the metal member, etc. of the gallium nitride based upper and lower electrode type light emitting diode of the present invention includes solder, solder paste, solder and flux, gold-tin eutectic solder paste, and indium system.
  • solder solder paste
  • solder and flux gold-tin eutectic solder paste
  • indium system gold-tin eutectic solder paste
  • Known or well-known materials such as eutectic solder can be used.
  • the gallium nitride based vertical electrode type light emitting diode, metal substrate unit, reflection frame, thermosetting resin adhesive, known or well-known ones of the present invention can be used. In the present invention, a part of each embodiment can be used in combination with each other.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
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Abstract

Provided is a light emitting device having an upper/lower electrode type light emitting diode on a substrate composed of a ceramic board composed of a metal substrate and a ceramic substrate abutting to the metal substrate. A substrate lead frame for manufacturing the light emitting device is also provided. In the light emitting device, a light emitting section or the like is arranged on a substrate wherein a metal substrate (11) and a ceramic board (12) abut to each other on one side. The ceramic board (12) has a conductive film (17) formed on an upper section. The metal substrate (11) and the ceramic board (12) are bonded with an adhesive such as a thermosetting resin so that a reflection frame (16) composed of an insulating member having an opening section is over the metal substrate and the ceramic board. At least one upper/lower electrode type light emitting diode (13) has a lower electrode on the metal substrate (11) inside the reflection frame (16). At least one conductive connecting member (14) connects an upper electrode (131) of the upper /lower electrode type light emitting diode (13) and the conductive film (17) on the ceramic board (12).

Description

明 細 書 発光装置および発光装置用パッケージ集合体 技術分野  Description Light emitting device and package assembly for light emitting device Technical Field
本発明は、 金属基板と前記金属基板に当接されたセラミック基板から なる基板上に上下電極型発光ダイォードを設けた発光装置に関するもの である。 本発明は、 前記金属基板と、 前記金属基板に当接するセラミツ ク基板を嵌合するセラミック基板嵌合孔を有する発光装置用パッケージ 集合体に関するものである。 本発明は、 前記上下電極型発光ダイオード の上部電極とセラミック基板に設けられた導電性膜とを接続する導電性 接続部材に関するものである。 背景技術  The present invention relates to a light emitting device in which upper and lower electrode type light emitting diodes are provided on a substrate comprising a metal substrate and a ceramic substrate in contact with the metal substrate. The present invention relates to a package assembly for a light emitting device having a ceramic substrate fitting hole for fitting the metal substrate and a ceramic substrate in contact with the metal substrate. The present invention relates to a conductive connecting member for connecting an upper electrode of the upper and lower electrode type light emitting diode and a conductive film provided on a ceramic substrate. Background art
第 6図 （a ) から （ c ) は従来例を説明するためのものであり、 上下 電極型発光ダイォードを反射枠の内部に設けた発光装置である。 第 6図 において、 上下電極型発光ダイオード 6 3は、 下部電極が一方の金属基 板 6 1上に接合されている。 前記上下電極型発光ダイォード 6 3の上部 電極は、 導電性接続部材 6 4により、 他方の金属基板 6 2に接合されて いる。 前記一方の金属基板 6 1は、 他方の金属基板 6 2と絶縁部材また は空間 6 7により分離されている。 前記分離された金属基板 6 1、 6 2 は、 反射枠 6 6により一体に保持されている。  FIGS. 6 (a) to (c) are for explaining a conventional example, and are a light emitting device in which upper and lower electrode type light emitting diodes are provided inside a reflection frame. In FIG. 6, the lower electrode of the upper and lower electrode type light emitting diode 63 is joined on one metal substrate 61. The upper electrode of the upper and lower electrode type light emitting diode 63 is joined to the other metal substrate 62 by a conductive connecting member 64. The one metal substrate 61 is separated from the other metal substrate 62 by an insulating member or space 67. The separated metal substrates 6 1 and 6 2 are integrally held by a reflection frame 6 6.
前記上下電極型発光ダイオード 6 3は、 封止材料 6 8により、 前記反 射枠 6 6内に封止されている。 前記封止材料 6 8は、 前記反射枠 6 6の 上面まで充填され、 その上に、 蛍光膜 6 9が形成されている。  The upper and lower electrode type light emitting diodes 63 are sealed in the reflection frame 66 by a sealing material 68. The sealing material 68 is filled up to the upper surface of the reflective frame 66, and a fluorescent film 69 is formed thereon.
特開 2 0 0 7— 2 7 5 8 5号公報に記載されている発光装置は、 前記 上下電極型発光ダイォードの上部電極と他方の金属基板とを接続する際 に、 超音波等によるワイヤーボンディングを用いている。 前記発光装置 は、 前記ワイヤーボンディングが振動により切断等の事故を発生しない ように、 封止材料で前記上下電極型発光ダイオードを封止し、 その後、 前記封止材料の上に蛍光体層が設けられている。 The light emitting device described in Japanese Patent Application Laid-Open No. 2 0 7-2 7 5 8 5 is a wire bonding method using ultrasonic waves or the like when connecting the upper electrode of the upper and lower electrode type light emitting diode and the other metal substrate. Is used. The light emitting device does not cause an accident such as cutting due to vibration of the wire bonding Thus, the upper and lower electrode type light emitting diodes are sealed with a sealing material, and then a phosphor layer is provided on the sealing material.
前記従来例おょぴ特許公開公報に記載されている封止材料は、 熱等に より収縮した場合、 蛍光膜との間に空間部 6 8 1が形成される。 前記空 間部 6 8 1にある空気は、 発光ダイォードから発生する熱により膨張し た場合、 逃げ道がなく、 前記蛍光膜の亀裂またはめくれ等が発生する。 また、 前記発光ダイオードは、 前記封止材料を反射枠全体に充填するの ではなく、 上部のみを封止した場合、 異なる色の蛍光体を通過する光の 距離が違うため、 色むらが発生し、 所望の色で発光しない。  When the sealing material described in the above-mentioned conventional example Opto Patent Publication is shrunk by heat or the like, a space portion 6 81 is formed between the sealing material and the fluorescent film. When the air in the space 6 81 expands due to heat generated from the light emitting diode, there is no escape path, and the phosphor film cracks or turns. In addition, the light emitting diode does not fill the entire reflective frame with the sealing material, but when only the upper part is sealed, the distance of light passing through the phosphors of different colors is different, resulting in uneven color. Does not emit light in the desired color.
図 6に示した、 スリ ツ トを備えた金属基板に取り付けられた発光ダイ オードは、 透明樹脂で封止され、 前記透明樹脂で強度を持たせるために、 硬度の高いものが使用されている。 しかし、 前記硬度の高い封止材料は、 発光ダイォードから発生する熱応力が大きいという問題があった。 前記 熱応力は、 発光ダイォードに電力を供給する配線を断線させる恐れがあ つた。  The light-emitting diode attached to the metal substrate with slits shown in FIG. 6 is sealed with a transparent resin, and a material with high hardness is used to give strength to the transparent resin. . However, the high-hardness sealing material has a problem that the thermal stress generated from the light emitting diode is large. The thermal stress may break the wiring that supplies power to the light emitting diode.
また、 図 6に示された発光装置は、 封止材料と蛍光膜、 前記蛍光膜と 透明保護膜がそれぞれ半硬化状態で互いに接着される。 前記発光装置は、 封止材料、 蛍光膜、 透明保護膜がそれぞれ良好に接着されるが、 硬化状 態になる際に、 収縮に基づく応力がか'かる。 すなわち、 前記封止材料は、 前記収縮に際し、 湾曲される。 前記蛍光膜は、 前記封止材料の湾曲に伴 い、 引っ張られるため、 亀裂の発生、 めくれ、 あるいは破裂する場合が ある。  In the light emitting device shown in FIG. 6, the sealing material and the fluorescent film, and the fluorescent film and the transparent protective film are bonded to each other in a semi-cured state. In the light-emitting device, the sealing material, the fluorescent film, and the transparent protective film are each well bonded, but when being in a cured state, stress due to shrinkage is applied. That is, the sealing material is bent during the contraction. Since the fluorescent film is pulled along with the bending of the sealing material, the fluorescent film may be cracked, turned up, or ruptured.
前記発光装置は、 金属基板 6 1、 6 2の間に透明な絶縁部材 6 7によ り分離されている。 前記絶縁部材 6 7は、 前記上下電極型発光ダイォー ド 6 3から放射した光が逃げるため、 効率を低下させている。  The light emitting device is separated between the metal substrates 61, 62 by a transparent insulating member 67. The insulating member 67 has reduced efficiency because light emitted from the upper and lower electrode type light emitting diodes 63 escapes.
複数の発光ダイォードを大量に作製する方法は、 リ一ドフレームを用 い、 所定の箇所に所定の部材を取り付けた後、 リードフレームを切断す ることにより、 所望する数の発光ダイォードが取り付けられた発光装置 としていた。 しかし、 前記発光装置は、 基板と発光ダイオード、 発光ダ ィォードの電極とリ一ド線、 反射枠と基板等異なる部材の取り付けがあ る。 前記各種取り付けを最適とするためには、 温度管理を厳密に行う必 要があった。 前記温度管理は、 十分でない場合、 発光ダイオードに悪影 響を与える場合が多い。 発明の開示 A method for manufacturing a plurality of light emitting diodes in large quantities is that a desired number of light emitting diodes can be attached by cutting a lead frame after attaching a predetermined member to a predetermined location using a lead frame. As a light emitting device. However, the light emitting device includes a substrate, a light emitting diode, and a light emitting diode. There are different members such as diode electrode and lead wire, reflection frame and substrate. In order to optimize the various installations, it was necessary to strictly control the temperature. If the temperature control is not sufficient, the light emitting diode is often adversely affected. Disclosure of the invention
以上のような課題を解決するために、 本発明は、 前記応力により、 あ るいは封止材料と蛍光体含有膜との間にできた空間部に溜まる空気の膨 張によって、 蛍光体含有膜が亀裂またはめくれ等が起きない発光効率の 優れた発光装置を提供することを目的とする。 本発明は、 量産性に優れ、 大電流および熱応力に耐えるとともに、 高い強度で保持される発光装置 を提供することを目的とする。 本発明は、 金属基板およびセラミック基 板を嵌合する嵌合孔を有する量産に向いた発光装置用パッケージ集合体 を提供することを目的とする。  In order to solve the above-described problems, the present invention provides a phosphor-containing film by the above-described stress or by the expansion of air accumulated in a space formed between the sealing material and the phosphor-containing film. An object of the present invention is to provide a light-emitting device with excellent luminous efficiency that does not crack or turn up. An object of the present invention is to provide a light-emitting device that is excellent in mass productivity, can withstand a large current and thermal stress, and is maintained at high strength. An object of the present invention is to provide a package assembly for a light emitting device suitable for mass production having a fitting hole for fitting a metal substrate and a ceramic substrate.
本発明の発光装置は、 金属基板と少なく とも上部に導電性膜が形成さ れているセラミック基板とが互いに当接された基板と、 前記金属基板と セラミック基板に跨がるように底部が前記基板に接着された開口部を有 する絶縁性部材からなる反射枠と、 前記反射枠の内部の金属基板に下部 電極が取り付けられている少なく とも一つの上下電極型発光ダイォード と、 前記上下電極型発光ダイォードの上部電極と前記セラミック基板上 の導電性膜とを接続する少なく とも一つの導電性接続部材と、 前記金属 基板と前記上下電極型発光ダイォードの下部電極、 前記上下電極型発光 ダイォードの上部電極と前記導電性接続部材、 および前記導電性接続部 材と前記導電性膜とを接合するハンダとから少なく とも構成されている ことを特徴とする。  The light emitting device according to the present invention includes a substrate in which a metal substrate and a ceramic substrate having a conductive film formed at least on the upper surface are in contact with each other, and a bottom portion extending over the metal substrate and the ceramic substrate. A reflective frame made of an insulating member having an opening bonded to a substrate; at least one vertical electrode type light emitting diode having a lower electrode attached to a metal substrate inside the reflective frame; and the vertical electrode type At least one conductive connecting member connecting the upper electrode of the light emitting diode and the conductive film on the ceramic substrate; the metal substrate; the lower electrode of the upper and lower electrode type light emitting diode; and the upper portion of the upper and lower electrode type light emitting diode. The electrode and the conductive connecting member, and the solder that joins the conductive connecting member and the conductive film are at least configured. .
本発明の発光装置は、 前記基板、 反射枠、 少なく とも一つの上下電極 型発光ダイオード、 少なく とも一つの導電性接続部材、 ハンダからなる 発光部が複数個から構成されていることを特徴とする。  The light emitting device of the present invention is characterized in that the substrate, the reflection frame, at least one upper and lower electrode type light emitting diode, at least one conductive connecting member, and a plurality of light emitting portions made of solder are formed. .
本発明の発光装置は、 前記導電性接続部材が少なく とも一つの金線リ ボンから構成されていることを特徴とする。 In the light emitting device of the present invention, the conductive connecting member has at least one gold wire rib. It is composed of Bonn.
本発明の発光装置は、 前記金属基板がヒートシンク付き金属基板で、 セラミック基板との厚さがほぼ等しいことを特徴とする。  In the light-emitting device of the present invention, the metal substrate is a metal substrate with a heat sink, and the thickness of the metal substrate is substantially equal to that of the ceramic substrate.
本発明の発光装置は、 前記発光部が直列、 並列、 あるいは直並列に接 続されていることを特徴とする。  The light-emitting device of the present invention is characterized in that the light-emitting portions are connected in series, parallel, or series-parallel.
本発明の発光装置は、 前記反射枠内に上下電極型発光ダイォードを封 止する材料が設けられていることを特徴とする。  The light emitting device of the present invention is characterized in that a material for sealing the upper and lower electrode type light emitting diodes is provided in the reflection frame.
本発明の発光装置は、 前記反射枠内または前記反射枠の上面に上下電 極型発光ダイォードから癸する光をほぼ白色光に変換する少なく とも一 つの蛍光体を含有する蛍光膜が取り付けられていることを特徴とする。 本発明の発光装置用パッケージ集合体は、 接続部により接続された多 数の金属基板と、 前記金属基板の一方にセラミック基板の嵌合部が設け られた金属基板集合体と、 前記各嵌合部に設けられ、 少なく とも上部に 導電性膜が形成されたセラミック基板と、 各一対の前記金属基板と前記 セラミック基板に跨がるように底部が接着された開口部を有する絶縁性 部材からなる反射枠とから少なく とも構成されていることを特徴とする。 本発明の発光装置用パッケージ集合体は、 前記リード接続部がリード 状接続部からなり、 金属基板の三方にリ一ド状接続部が設けられている ことを特徴とする。  In the light emitting device of the present invention, a fluorescent film containing at least one phosphor that converts light emitted from the upper and lower electrode type light emitting diodes into almost white light is attached in the reflection frame or on the upper surface of the reflection frame. It is characterized by being. A package assembly for a light emitting device according to the present invention includes a plurality of metal substrates connected by connecting portions, a metal substrate assembly in which a ceramic substrate fitting portion is provided on one of the metal substrates, and the respective fittings. A ceramic substrate having a conductive film formed on at least the upper portion thereof, and a pair of the metal substrates and an insulating member having an opening bonded to the bottom so as to straddle the ceramic substrate. It is characterized in that it is composed of at least a reflection frame. The package assembly for a light emitting device according to the present invention is characterized in that the lead connection portion is composed of a lead connection portion, and a lead connection portion is provided on three sides of the metal substrate.
本発明の発光装置用パッケージ集合体は、 前記リード接続部に脆弱部 が設けられ、 容易に分離できることを特徴とする。  The package assembly for a light emitting device according to the present invention is characterized in that the lead connecting portion is provided with a weak portion and can be easily separated.
本発明の発光装置用パッケージ集合体は、 前記リード接続部に下死点 制御により制御された深さの溝からなる切断部が設けられていることを 特徴とする。  The package assembly for a light emitting device according to the present invention is characterized in that the lead connection portion is provided with a cutting portion made of a groove having a depth controlled by bottom dead center control.
本発明の発光装置は、 金属基板とセラミック基板が一辺で互いに当接 された基板上に発光部等が設けられている。 また、 前記セラミック基板 は、 少なく とも上部に導電性膜が形成されている。 開口部を有する絶縁 性部材からなる反射枠の底部は、 前記金属基板とセラミック基板とを跨 ぐようにして、 熱硬化性樹脂等の接着剤によって接着されている。 前記 金属基板、 セラミック基板、 反射枠の三者は、 前記接着剤の接着により 堅固に一体的に固定される。 少なく とも一つの上下電極型発光ダイォー ドは、 前記反射枠の内部の金属基板に下部電極が取り付けられている。 少なくとも一つの板状導電性接続部材は、 前記上下電極型発光ダイォー ドの上部電極と前記セラミック基板上の導電性膜とを接合する。 本発明 の発光装置は、 金属基板とセラミック基板の間に分離部が無いため、 こ の部分から光が前記発光装置の後部に照射されるといった光の無駄がな くなる。 In the light emitting device of the present invention, a light emitting portion or the like is provided on a substrate in which a metal substrate and a ceramic substrate are in contact with each other on one side. The ceramic substrate has a conductive film formed on at least the top. The bottom of the reflection frame made of an insulating member having an opening is bonded with an adhesive such as a thermosetting resin so as to straddle the metal substrate and the ceramic substrate. Above The metal substrate, the ceramic substrate, and the reflection frame are firmly and integrally fixed by the adhesive. At least one upper and lower electrode type light emitting diode has a lower electrode attached to a metal substrate inside the reflection frame. At least one plate-like conductive connecting member joins the upper electrode of the upper and lower electrode type light emitting diode and the conductive film on the ceramic substrate. In the light emitting device of the present invention, since there is no separation part between the metal substrate and the ceramic substrate, light is not wasted such that light is emitted from this part to the rear part of the light emitting device.
前記金属基板と前記上下電極型発光ダイォードの下部電極、 前記上下 電極型発光ダイォードの上部電極と前記導電性接続部材、 および前記導 電性接続部材と前記導電性膜とは、 ハンダによって同時に接合される。 前記上下電極型発光ダイオードの上下電極、 金属基板、 導電性接続部材、 導電性膜等の接続は、 ハンダ、 ハンダペースト、 ハンダとフラックス、 金一錫共晶ハンダペースト、 インジウム系共晶ハンダ等、 公知または周 知のものを使用することができる。 前記ハンダは、 たとえば、 金と錫  The metal substrate and the lower electrode of the upper and lower electrode type light emitting diode, the upper electrode of the upper and lower electrode type light emitting diode and the conductive connecting member, and the conductive connecting member and the conductive film are simultaneously bonded by solder. The The upper and lower electrodes of the upper and lower electrode type light emitting diode, the metal substrate, the conductive connection member, the conductive film, etc. are connected by solder, solder paste, solder and flux, gold-tin eutectic solder paste, indium-based eutectic solder, etc. Known or well-known ones can be used. The solder is, for example, gold and tin
( 2 0 % ) 、 金と錫 （9 0 % ) 、 金とシリカ （ 3 . 1 5 % ) 、 金とゲル マニウム （ 1 2 % ) 、 その他、 錫一銅—ニッケル系、 錫—銀系、 錫一銀 一銅系、 錫一銀一ビスマス一インジウム系、 錫一亜鉛系共晶ハンダがぁ る。  (20%), gold and tin (90%), gold and silica (3.15%), gold and germanium (12%), others, tin-copper-nickel, tin-silver, There are tin-silver-copper, tin-silver-bismuth-indium, and tin-zinc eutectic solders.
本発明の発光装置は、 金属基板とセラミック基板とを互いに当接され ている基板を複数個設け、 これらのそれぞれに対応した開口部を有する 絶縁性部材からなる反射枠が前記金属基板とセラミック基板のそれぞれ に跨がるように接着されている点で前記発明と異なっている。 前記発光 装置は、 線状光源または面光源にすることが容易である。  The light-emitting device of the present invention includes a plurality of substrates in which a metal substrate and a ceramic substrate are in contact with each other, and a reflection frame made of an insulating member having an opening corresponding to each of the substrates is the metal substrate and the ceramic substrate. It differs from the said invention in the point which adhere | attaches so that each may be straddled. The light emitting device can easily be a linear light source or a surface light source.
本発明の発光装置は、 導電性接続部材がほぼ矩形状の金線リボンから 構成されている。 前記金線リボンは、 たとえば、 二本の腕状接続部を有 する代わりに、 厚さの薄い短冊状とすることができる。 前記金線リボン は、 銅を金メッキするものと比較して、 加工手間が少なく、 曲げ易く、 また、 ハンダが付き易い。 また、 前記金線リポンは、 ハンダ処理がし易 い狭い幅であるため、 上下電極型発光ダイォードから発する光の影を作 らないだけでなく、 大電流を確実に流すことができるという利点がある。 なお、 前記金線リポンは、 たとえば、 幅が 0 . 1 m mから 0 . 2 m m、 厚さが 0 . 0 2 5 m mである。 In the light emitting device of the present invention, the conductive connecting member is composed of a substantially rectangular gold wire ribbon. For example, the gold wire ribbon may be formed into a thin strip shape instead of having two arm-shaped connecting portions. The gold wire ribbon has less processing effort, is easy to bend, and is easy to be soldered as compared to a gold-plated copper. In addition, the gold wire ribbon can be easily soldered. This narrow width has the advantage of not only creating shadows of light emitted from the upper and lower electrode light emitting diodes, but also allowing large currents to flow reliably. For example, the gold wire ribbon has a width of 0.1 mm to 0.2 mm and a thickness of 0.025 mm.
本発明の発光装置は、 金属基板にヒートシンクが付いており、 セラミ ック基板と前記ヒートシンク付き金属基板の厚さがほぼ同じである。 前 記ヒートシンク付き金属基板上に設けられた発光装置は、 放熱効果が高 く、 大電流を流すことができるため、 高輝度を得ることができる。  In the light emitting device of the present invention, a heat sink is attached to the metal substrate, and the thickness of the ceramic substrate and the metal substrate with the heat sink is substantially the same. The light-emitting device provided on the metal substrate with the heat sink has a high heat dissipation effect and can flow a large current, so that high luminance can be obtained.
前記一つの反射枠から構成される発光部は、 複数個が直列、 並列、 あ るいは直並列に接続される。 前記発光部を電気的に直列、 並列、 あるい は直並列に接続することで、 所望の明るさ、 または所望の大きさの発光 装置とすることが容易にできる。 また、 前記発光部は、 複数組を行状お よぴ Zまたは列状に取り付けることができ、 線光源または面光源とする ことができる。  A plurality of the light emitting units composed of the single reflection frame are connected in series, in parallel, or in series-parallel. By connecting the light emitting units electrically in series, in parallel, or in series-parallel, it is possible to easily obtain a light emitting device having a desired brightness or a desired size. In addition, a plurality of sets of the light emitting units can be attached in a row shape Z or a column shape, and can be a line light source or a surface light source.
本発明の発光装置は、 反射枠内に上下電極型発光ダイォードを封止す る材料が充填されている。 本発明の発光装置は、 板状導電性接続部材ま たは金線リボンを使用することにより、 封止材料を省略できるが、 振動 がある場所に使用できるように前記反射枠内に封止材料を充填して、 前 記上下電極型発光ダイォードを封止することにより、 信頼性をより一層 高いものにすることができる。  In the light emitting device of the present invention, a material for sealing the upper and lower electrode type light emitting diodes is filled in the reflection frame. In the light emitting device of the present invention, the sealing material can be omitted by using a plate-like conductive connecting member or a gold wire ribbon, but the sealing material can be used in a place where there is vibration. By filling the upper and lower electrode type light emitting diodes, the reliability can be further enhanced.
本発明の発光装置は、 上下電極型発光ダイォードから発する光をほぼ 白色光に変換する少なく とも一つの蛍光体を含有する蛍光膜が反射枠内 または前記反射枠の上面に設けられている。 前記蛍光膜を設けた発光装 置は、 前記上下電極型発光ダイオードの光を白色に変換するため、 通常 の照明装置として使用できる。 前記上下電極型発光ダイオードは、 青色 発光ダイォードまたは紫外線発光ダイォードであり、 青色発光ダイォー ドの場合、 青色を吸収して黄色を発色する蛍光体を含む蛍光膜、 または 青色を吸収して緑色と赤色を発色する蛍光体を含む蛍光膜を用いること により、 青色発光ダイォードの青色と合わせてほぼ白色光が出るように なっている。 また、 紫外線発光ダイオードの場合、 紫外線を吸収して青 色、 緑色、 および赤色を発色する蛍光体を含む蛍光膜を用いてほぼ白色 を出したり、 あるいは紫外線を吸収して青色を発色する蛍光体と、 紫外 線おょぴ前記青色を吸収して緑色と赤色を発色する蛍光体を用いてもほ ぼ白色光を出すことができる。 In the light emitting device of the present invention, a fluorescent film containing at least one phosphor that converts light emitted from the upper and lower electrode type light emitting diodes into substantially white light is provided in the reflection frame or on the upper surface of the reflection frame. Since the light emitting device provided with the phosphor film converts the light of the upper and lower electrode type light emitting diodes into white, it can be used as a normal lighting device. The upper and lower electrode type light emitting diodes are blue light emitting diodes or ultraviolet light emitting diodes, and in the case of blue light emitting diodes, a fluorescent film containing a phosphor that absorbs blue and develops yellow, or green and red that absorbs blue By using a phosphor film containing a phosphor that develops color, almost white light is emitted together with the blue color of the blue light emitting diode. It has become. In the case of an ultraviolet light emitting diode, a phosphor film that contains blue, green, and red phosphors that absorb ultraviolet rays produces a white color, or a phosphor that absorbs ultraviolet rays and develops a blue color. Even when using a phosphor that absorbs the blue light and develops green and red colors, almost white light can be emitted.
本発明の発光装置用パッケージ集合体は、 金属基板とセラミックを嵌 合するセラミック基板嵌合孔が複数組設けられている金属基板集合体か らなる。 前記金属基板は、 接続部により接続され、 リードフレームまた は他の金属基板に接続されている。 セラミック基板は、 三辺がリードフ レームまたは他の嵌合孔から突出するリ一ド接続部と、 他の一辺が前記 金属基板の他の一辺とにより囲まれている。 前記セラミック基板嵌合孔 は、 セラミック基板が嵌合された場合、 一辺が前記金属基板の一辺と当 接される大きさになっている。  The package assembly for a light emitting device of the present invention comprises a metal substrate assembly in which a plurality of ceramic substrate fitting holes for fitting a metal substrate and a ceramic are provided. The metal substrate is connected by a connecting portion and connected to a lead frame or another metal substrate. The ceramic substrate is surrounded by a lead connection portion that protrudes from a lead frame or another fitting hole on three sides and the other side of the metal substrate on the other side. The ceramic substrate fitting hole is sized such that one side is in contact with one side of the metal substrate when the ceramic substrate is fitted.
前記セラミック基板は、 導電性接続部材、 たとえば、 金線リボン等が 接続できる導電性膜が形成された後、 絶縁性部材からなる開口部を有す る反射枠が熱硬化性樹脂接着剤により取り付けられる。 前記反射枠は、 前記金属基板と前記セラミック基板に跨がるように底部が接着剤により 接着剤されている。  The ceramic substrate is formed by forming a conductive film that can be connected to a conductive connecting member, such as a gold wire ribbon, and then attaching a reflective frame having an opening made of an insulating member with a thermosetting resin adhesive. It is done. The reflection frame has a bottom part bonded with an adhesive so as to straddle the metal substrate and the ceramic substrate.
本発明の発光装置用パッケージ集合体は、 リ一ドフレームに対する金 属基板およびセラミック基板嵌合孔の接続が不安定である場合、 前記リ 一ド接続部の間に補強用リ一ド部を設けることにより、 強度を上げてい る。 前記リードフレームは、 セラミック基板嵌合孔および所定の空間部 をプレス等で打ち抜かれる。 その後、 前記セラミック基板嵌合孔には、 予め作製されたセラミック基板が嵌合される。 前記リ一ドフレームは、 前記セラミック基板の嵌合に際し、 板状部材の上に置かれる。 前記リー ドフレームは、 セラミック基板嵌合孔にセラミック基板が嵌合された後、 金属基板とセラミック基板に跨がるように絶縁部材からなる開口部を有 する反射枠を熱硬化性樹脂接着剤により固定する。 前記リ一ド接続部は、 金属基板の三方にリード状接続部を設けることが望ましい。 本発明の発光装置用パッケージ集合体は、 前記リード接続部が脆弱部 から構成されている。 前記脆弱部は、 前記発光部を作製する際に、 分離 されずに、 完成後に容易に分離できる強度を有している。 When the connection of the metal substrate and the ceramic substrate fitting hole to the lead frame is unstable, the light emitting device package assembly of the present invention has a reinforcing lead portion between the lead connecting portions. By providing it, the strength is increased. In the lead frame, the ceramic substrate fitting hole and the predetermined space are punched out by a press or the like. Thereafter, a ceramic substrate prepared in advance is fitted into the ceramic substrate fitting hole. The lead frame is placed on a plate-like member when the ceramic substrate is fitted. The lead frame is a thermosetting resin adhesive having a reflective frame having an opening made of an insulating member so as to straddle the metal substrate and the ceramic substrate after the ceramic substrate is fitted into the ceramic substrate fitting hole. To fix. The lead connection part is preferably provided with a lead-like connection part on three sides of the metal substrate. In the package assembly for a light emitting device according to the present invention, the lead connection portion is composed of a fragile portion. The fragile portion has a strength capable of being easily separated after completion without being separated when the light emitting portion is manufactured.
本発明の発光装置用パッケージ集合体は、 前記金属基板およびセラミ ック基板嵌合孔を作製する際に、 リ一ド接続部に下死点制御により制御 された深さの溝からなる切断部が設けられている。 前記深さを制御され た溝からなる切断部は、 前記金属基板およびセラミック基板嵌合孔に上 下電極型発光ダイォード等の部品が取り付けられた後、 容易に分離する ことができる。  The package assembly for a light-emitting device according to the present invention includes a cut portion formed by a groove having a depth controlled by bottom dead center control in the lead connection portion when the metal substrate and the ceramic substrate fitting hole are produced. Is provided. The cut portion formed of the groove whose depth is controlled can be easily separated after parts such as upper and lower electrode type light emitting diodes are attached to the metal substrate and ceramic substrate fitting holes.
本発明によれば、 金属基板とセラミック基板が当接しており、 前記金 属基板とセラミック基板の間から光が漏れないため、 効率の高い発光装 置となる。  According to the present invention, the metal substrate and the ceramic substrate are in contact with each other, and light does not leak from between the metal substrate and the ceramic substrate, so that the light emitting device is highly efficient.
本発明によれば、 金属基板とセラミック基板が当接され、 反射枠が前 記金属基板とセラミック基板に跨がって接着剤によって取り付けられて いるため、 リードフレームから分離された際に、 一つのパッケージまた は発光装置として堅固に保持される。  According to the present invention, the metal substrate and the ceramic substrate are brought into contact with each other, and the reflection frame is attached by the adhesive across the metal substrate and the ceramic substrate. It is firmly held as one package or light emitting device.
本発明によれば、 上下電極型発光ダイォードの上部電極とセラミック 基板上の導電性膜を板状導電性接続部材または金線リボンにより接続し ているため、 放熱性が良く、 大電流を流すことができるだけでなく、 前 記上下電極型発光ダイオードからの光の影になり難い。 また、 前記板状 導電性接続部材または金線リボンは、 ワイヤーボンディングと比較して、 振動に強く、 封止材料を省略しても、 接続部が断線するようなことがな い。  According to the present invention, the upper electrode of the upper and lower electrode type light emitting diode and the conductive film on the ceramic substrate are connected by the plate-like conductive connecting member or the gold wire ribbon, so that the heat dissipation is good and a large current flows. In addition to the above, it is difficult to be shaded by light from the upper and lower electrode type light emitting diodes. Further, the plate-like conductive connecting member or the gold wire ribbon is more resistant to vibration than the wire bonding, and even if the sealing material is omitted, the connecting portion does not break.
本発明によれば、 各接合部に高融点のハンダを使用すれば、 他の印刷 配線基板等との接続が低融点のハンタを使用することができるとともに、 接合に際し、 接合部および zまたは発光層に振動が加わることがなく、 不良品のない上下電極型発光ダイォードからなる発光装置を得ることが できる。  According to the present invention, if a solder having a high melting point is used for each joint, a solder having a low melting point can be used for connection with other printed wiring boards and the like. It is possible to obtain a light emitting device composed of upper and lower electrode type light emitting diodes without vibrations applied to the layers and without defective products.
本発明によれば、 上下電極型発光ダイォードを直列および Zまたは並 列、 あるいは、 行状および Zまたは列状に接続できるため、 所望の明る さと大きさの発光装置を容易に得ることができる。 According to the present invention, the upper and lower electrode type light emitting diodes are connected in series and Z or in parallel. Since it can be connected in columns, rows, and Z or columns, a light-emitting device having a desired brightness and size can be easily obtained.
本発明によれば、 上下電極型発光ダイオードは、 蛍光体または蛍光体 含有膜体の種類を変えるだけで、 白色光以外に、 所望の色の光を容易に 得ることができる。 図面の簡単な説明  According to the present invention, the upper and lower electrode type light emitting diode can easily obtain light of a desired color in addition to white light only by changing the type of the phosphor or the phosphor-containing film body. Brief Description of Drawings
第 1図 （a) から （ c) は本発明の第 1実施例であり、 第 1図 （a) は発光装置の平面図、 第 1図 （b ) は発光装置の断面図、 第 1図 （ c) は発光装置の底面図である。  1 (a) to (c) show a first embodiment of the present invention, FIG. 1 (a) is a plan view of the light emitting device, FIG. 1 (b) is a sectional view of the light emitting device, FIG. (C) is a bottom view of the light emitting device.
第 2図は発光ダイォードパッケージ連結体が多数設けられているリ一 ドフレームを説明するための図である。  FIG. 2 is a view for explaining a lead frame provided with a large number of light emitting diode package assemblies.
第 3図 （ a ) から （ c ) は発光ダイオードパッケージ連結体が多数設 けられているリ一ドフレームおよび上下電極型発光ダイォードを取り付 けた状態を説明するための図である。  FIGS. 3 (a) to 3 (c) are views for explaining a state in which a lead frame provided with a large number of LED package assemblies and upper and lower electrode type light emitting diodes are attached.
第 4図は発光ダイォードパッケージ連結体が多数設けられている他の リ一ドフレームを説明するための図である。  FIG. 4 is a view for explaining another lead frame provided with a large number of light emitting diode package coupling bodies.
第 5図 （a ) から （d) は本発明の第 5実施例であり、 第 5図 （a ) は発光装置の平面図、 第 5図 （b ) は第 5図 （a) の A— A断面図、 第 5図 （c ) は第 5図 （a ) の B— B断面図、 第 5図 （d) は底面図であ る。  FIGS. 5 (a) to (d) show a fifth embodiment of the present invention, FIG. 5 (a) is a plan view of the light-emitting device, and FIG. 5 (b) is an A— of FIG. 5 (a). A sectional view, FIG. 5 (c) is a sectional view taken along the line BB in FIG. 5 (a), and FIG. 5 (d) is a bottom view.
第 6図は従来例を説明するためのものであり、 上下電極型発光ダイォ 一ドを反射枠の内部に設けた発光装置である。 発明を実施するための最良の形態  FIG. 6 is for explaining a conventional example, and shows a light emitting device in which upper and lower electrode type light emitting diodes are provided inside a reflection frame. BEST MODE FOR CARRYING OUT THE INVENTION
本発明の実施形態を図面に基づいて詳細に説明する。  Embodiments of the present invention will be described in detail with reference to the drawings.
(実施例 1 )  (Example 1)
第 1図 （a ) から （c) は本発明の第 1実施例であり、 第 1図 （a ) は発光装置の平面図、 第 1図 （b ) は発光装置の断面図、 第 1図 （ c) は発光装置の底面図である。 本発明の図は、 説明を分かりやすくするた めに、 大きさ関係が実際と必ずしも一致していない。 第 1図 （a ) から ( c ) において、 金属基板 1 1とセラミック基板 1 2は、 互いに当接さ れた一つの基板から構成されている。 反射枠 1 6は、 前記金属基板 1 1 とセラミック基板 1 2に跨がって底部が、 たとえば、 熱硬化性樹脂接着 剤等によって一体に固定されている。 FIGS. 1 (a) to (c) show a first embodiment of the present invention, FIG. 1 (a) is a plan view of the light emitting device, FIG. 1 (b) is a sectional view of the light emitting device, FIG. (C) FIG. 4 is a bottom view of the light emitting device. In the figure of the present invention, the size relationship does not always coincide with the actual size in order to make the explanation easy to understand. In FIGS. 1 (a) to (c), the metal substrate 11 and the ceramic substrate 12 are composed of one substrate in contact with each other. The bottom of the reflection frame 16 is fixed integrally with the metal substrate 11 and the ceramic substrate 12 with, for example, a thermosetting resin adhesive.
前記金属基板 1 1は、 たとえば、 アルミニウム、 銅、 鉄、 またはこれ らの合金からなり、 必要に応じて、 ニッケルと銀により表面処理がされ ている。 前記上下電極型発光ダイオード 1 3は、 前記金属基板 1 1の上 部に下部電極 （図示されていない） が取り付けられている。 また、 前記 上下電極型発光ダイオード 1 3は、 上部電極 1 3 1が上部の周囲に設け られ、 後述の導電性接続部材 1 4の腕と接続される部分が広くなつてい る。 前記導電性接続部材 1 4は、 たとえば、 二本の腕からなる腕状接続 部 1 4 1が設けられ、 その先端部が前記上下電極型発光ダイォード 1 3 の上部電極 1 3 1 と接続されている。  The metal substrate 11 is made of, for example, aluminum, copper, iron, or an alloy thereof, and is surface-treated with nickel and silver as necessary. In the upper and lower electrode type light emitting diodes 13, a lower electrode (not shown) is attached to the upper part of the metal substrate 11. In the upper and lower electrode type light emitting diodes 13, the upper electrode 13 1 is provided around the upper part, and the portion connected to the arm of the conductive connecting member 14 described later is wide. The conductive connection member 14 is provided with, for example, an arm-shaped connection portion 14 1 having two arms, and a tip portion of the conductive connection member 14 is connected to the upper electrode 13 1 of the upper and lower electrode type light emitting diode 1 3. Yes.
前記セラミック基板 1 2は、 前記金属基板 1 1に一辺が当接されてい るとともに、 少なく とも一部の上面に導電膜 1 7が形成されている。 前 記導電性接続部材 1 4の他端は、 前記セラミック基板 1 2に設けられて いる導電膜 1 7に接合される。 たとえば、 前記発光装置は、 金属基板 1 1 とセラミック基板 1 2の導電膜 1 7に図示されていない電源を接続す ることにより、 上下電極型発光ダイオード 1 3に電流が流れて発光する。 反射部 1 6 1を備えた反射枠 1 6は、 たとえば、 2液性のエポキシ系 樹脂を主成分とした熱硬化性樹脂接着剤、 あるいは 2液性のシリコーン 系樹脂からなる熱硬化性樹脂接着剤によつて前記金属基板 1 1およぴセ ラミック基板 1 2と接合される。 前記金属基板 1 1およびセラミック基 板 1 2は、 当接部分で接着されていないにもかかわらず、 前記反射枠 1 6および接着剤 1 5により、 互いに堅固に保持されている。  The ceramic substrate 12 is in contact with the metal substrate 11 at one side, and a conductive film 17 is formed on at least a part of the upper surface. The other end of the conductive connecting member 14 is joined to a conductive film 17 provided on the ceramic substrate 12. For example, in the light emitting device, when a power source (not shown) is connected to the conductive film 17 of the metal substrate 11 and the ceramic substrate 12, a current flows through the upper and lower electrode type light emitting diodes 13 to emit light. For example, the reflective frame 16 provided with the reflective portion 1 6 1 is made of, for example, a thermosetting resin adhesive mainly composed of a two-component epoxy resin, or a thermosetting resin adhesive made of a two-component silicone resin. The metal substrate 11 and the ceramic substrate 12 are bonded to each other by an agent. The metal substrate 11 and the ceramic substrate 12 are firmly held by the reflective frame 16 and the adhesive 15 even though they are not bonded at the contact portion.
前記金属基板 1 1 と上下電極型発光ダイオード 1 3の下部電極、 上下 電極型発光ダイォード 1 3の上部電極 1 3 1 と導電性接続部材 1 4との 接合は、 ハンダにより接合される。 前記接合部は、 濡れ性を向上させる ために、 予め金および/または銀メツキを施すことができる。 前記金属 基板 1 1には、 上部全面に銀および/または金メッキを施し、 電流の導 電性向上、 光反射性、 接合部の濡れ性の 3つを同時に達成することがで きる。 The metal substrate 1 1 and the lower electrode of the upper and lower electrode type light emitting diode 1 3, the upper electrode 1 3 1 of the upper and lower electrode type light emitting diode 1 3 and the conductive connecting member 1 4 Bonding is performed by soldering. In order to improve the wettability, the joint portion can be subjected to gold and / or silver plating in advance. The metal substrate 11 can be subjected to silver and / or gold plating on the entire upper surface, thereby simultaneously achieving three current enhancements: current conductivity improvement, light reflectivity, and joint wettability.
前記上下電極型発光ダイォード 1 3は、 上部電極 1 3 1に光を放射す る開口部を有するとともに、 前記導電性接続部材 1 4の腕状接続部 1 4 1が接合し易い大面積部が形成されている。 前記上下電極型発光ダイォ ード 1 3の側部から放射される光は、 前記腕状接続部 1 4 1の間に形成 された開口部から外部に放射されるようになつており、 前記光を効率良 く外部に放射する。 前記導電性接続部材 1 4は、 腕状接続部 1 4 1を二 本設ける代わりに、 一枚の短冊状板部材とし、 前記上下電極型発光ダイ ォード 1 3の上部電極 1 3 1の中央、 両端の少なく とも一方に接続する ことができる。 また、 前記短冊状板部材は、 金線リポンとすることで、 大電流を流すことができ、 曲げることも容易にできる。  The upper / lower electrode type light emitting diode 13 has an opening for emitting light to the upper electrode 13 1, and has a large area portion where the arm-like connection portion 14 1 of the conductive connection member 14 is easily joined. Is formed. The light radiated from the side portion of the upper and lower electrode type light emitting diodes 13 is adapted to be radiated to the outside through an opening formed between the arm-shaped connection portions 14 1, and the light. Is efficiently radiated to the outside. The conductive connecting member 14 is a single strip-shaped plate member instead of providing two arm-shaped connecting portions 14 1, the center of the upper electrode 13 1 of the upper and lower electrode type light emitting diode 13, Can be connected to at least one end. Further, the strip-shaped plate member is made of a gold wire ribbon, so that a large current can flow and it can be easily bent.
また、 前記反射枠 1 6の内部には、 図示されていない、 透明封止材料 が、 必要に応じて、 充填される。 前記透明封止材料は、 エラストマータ イブにすることができる。 前記エラス トマ一タイプの樹脂の硬度は、 シ ョァ A (ゴムの硬さ） で 1 5から 8 5、 好ましくは 2 0力 ら 8 0のもの を使用することが望ましい。 さらに、 前記透明封止材料は、 シリ コン系 樹脂からなるエラストマ一であることが望ましい。 前記硬度を有する透 明封止材料は、 前記金属基板 1 1、 導電性接続部材 1 4等の熱膨張係数 の違いによる熱応力がかかっても、 前記熱応力を吸収することができる 前記透明封止材料の表面、 または反射枠 1 6の開口部には、 図示され ていない、 蛍光体含有膜体が設けられる。 前記蛍光体含有膜体は、 使用 する上下電極型発光ダイォード 1 3および所望する光の色により選択さ れる。 また、 必要に応じて、 前記透明封止材料と蛍光体含有膜体の間に は、 乱反射部材を配置することにより、 上下電極型発光ダイオード 1 3 の光が有効に所望方向に放射される。 さらに、 前記透明封止材料には、 蛍光体を含有させることもできる。 In addition, the reflective frame 16 is filled with a transparent sealing material (not shown) as necessary. The transparent sealing material can be an elastomer type. The elastomer type resin preferably has a hardness of 15 to 85, preferably 20 to 80, as Shah A (rubber hardness). Furthermore, it is desirable that the transparent sealing material is an elastomer made of a silicone resin. The transparent sealing material having the hardness can absorb the thermal stress even when a thermal stress due to a difference in thermal expansion coefficient between the metal substrate 11 and the conductive connecting member 14 is applied. A phosphor-containing film body (not shown) is provided on the surface of the stopper material or the opening of the reflection frame 16. The phosphor-containing film body is selected depending on the upper and lower electrode type light emitting diodes 13 to be used and the desired color of light. In addition, if necessary, a diffuse reflection member is disposed between the transparent sealing material and the phosphor-containing film body, so that light from the upper and lower electrode type light emitting diodes 13 is effectively emitted in a desired direction. Furthermore, the transparent sealing material includes A phosphor can also be contained.
(実施例 2 )  (Example 2)
第 2図は発光ダイォードパッケージ連結体が多数設けられているリ一 ドフレームを説明するための図である。 第 2図において、 リードフレー ム 2 1は、 枠 2 2の中に一対の金属基板 1 1 とセラミック基板嵌合孔 1 2 ' との多数組が多数の脆弱部からなるリ一ド接続部 2 3によって前記 枠 2 2、 他の金属基板 1 1、 あるいは、 前記セラミック基板嵌合孔 1 2 ' に接続されて、 パッケージ連結体を構成している。 また、 前記金属 基板 1 1 とセラミック基板嵌合孔 1 2 ' は、 複数の空間部 2 4によって 周囲が囲まれている。 前記空間部 2 4は、 少なく とも一つのリード接続 部 2 3が設けられており、 前記枠 2 2、 他の金属基板 1 1、 あるいは、 セラミック基板嵌合孔 1 2 ' に接続されている。 また、 前記金属基板 1 1およびセラミック基板嵌合孔 1 2 ' は、 リード接続部 2 3を介さずに 前記枠 2 2 (リードフレーム） に設けることもできる。  FIG. 2 is a view for explaining a lead frame provided with a large number of light emitting diode package assemblies. In FIG. 2, the lead frame 21 includes a lead connection portion 2 in which a large number of pairs of a metal substrate 1 1 and a ceramic substrate fitting hole 1 2 ′ are composed of a number of weak portions in a frame 2 2. 3 is connected to the frame 2 2, the other metal substrate 11, or the ceramic substrate fitting hole 1 2 ′ to constitute a package coupling body. The metal substrate 1 1 and the ceramic substrate fitting hole 1 2 ′ are surrounded by a plurality of space portions 24. The space portion 24 is provided with at least one lead connection portion 23 and is connected to the frame 22, the other metal substrate 11, or the ceramic substrate fitting hole 12 ′. Further, the metal substrate 11 and the ceramic substrate fitting hole 1 2 ′ can be provided in the frame 2 2 (lead frame) without the lead connection portion 23 being interposed.
前記金属基板 1 1の周囲に設けられた空間部 2 4 (セラミック基板嵌 合孔 1 2 ' を除く） は、 リードフレーム 2 1に対する開口率を 2 5 %か ら 5 0 %、 好ましくは 3 0 %から 4 5 %としている。 前記リードフレー ム 2 1は、 開口率を高くすることにより、 金属板自体の熱容量を小さく することができ、 リフロー炉等の熱処理を行っても、 放熱が速いため、 上下電極型発光ダイォードに対する熱による悪影響をなくすことができ る。 なお、 枠 2 2は、 位置決め用の孔 2 2 1が複数個周囲に設けられて いる。  The space 2 4 provided around the metal substrate 11 1 (excluding the ceramic substrate fitting hole 1 2 ′) has an opening ratio of 25% to 50%, preferably 30% with respect to the lead frame 21. From% to 45%. The lead frame 21 can reduce the heat capacity of the metal plate itself by increasing the aperture ratio, and since heat is dissipated quickly even when heat treatment such as a reflow furnace is performed, heat to the upper and lower electrode type light emitting diodes can be reduced. The adverse effects of can be eliminated. The frame 2 2 has a plurality of positioning holes 2 2 1 around it.
(実施例 3 )  (Example 3)
第 3図 （a ) から （ c ) は発光ダイオードパッケージ連結体が多数設 けられているリ一ドフレームおよび上下電極型発光ダイォードを取り付 けた状態を説明するための図である。 第 3図 （a ) において、 リードフ レーム 3 1は、 枠 3 2の中に一対の金属基板 1 1とセラミック基板嵌合 孔 1 2 ' との多数組が多数のリード接続部 3 1 1によって前記枠 3 2、 他の金属基板 1 1、 あるいは、 前記セラミック基板嵌合孔 1 2 ' に接続 されている。 また、 前記金属基板 1 1 とセラミック基板嵌合孔 1 2 ' は、 複数の空間部 3 1 2によって周囲が囲まれている。 前記空間部 3 1 2は、 少なく とも一つのリード接続部 3 1 1が設けられており、 前記枠 3 2、 他の金属基板 1 1、 あるいは、 セラミック基板嵌合孔 1 2 に接続され ている。 また、 前記金属基板 1 1およびセラミック基板嵌合孔 1 2 ' は、 リード接続部 3 1 1を介さずに前記枠 3 2 (リードフレーム） に設ける こともできる。 FIGS. 3 (a) to 3 (c) are views for explaining a state in which a lead frame provided with a large number of LED package assemblies and upper and lower electrode type light emitting diodes are attached. In FIG. 3 (a), the lead frame 31 is composed of a plurality of pairs of metal substrates 11 and ceramic substrate fitting holes 1 2 'in a frame 3 2 by a large number of lead connecting portions 3 1 1. Connect to frame 3 2, other metal substrate 1 1, or ceramic substrate fitting hole 1 2 ′ Has been. The metal substrate 1 1 and the ceramic substrate fitting hole 1 2 ′ are surrounded by a plurality of space portions 3 1 2. The space portion 3 1 2 is provided with at least one lead connection portion 3 1 1, and is connected to the frame 3 2, another metal substrate 1 1, or a ceramic substrate fitting hole 1 2. . Further, the metal substrate 11 and the ceramic substrate fitting hole 1 2 ′ can be provided in the frame 3 2 (lead frame) without using the lead connection portion 3 11.
第 3実施例は、 リ一ド接続部 3 1 1の幅が第 2実施例と比較して広く、 切断部にプレスの下死点制御により制御されている溝 3 1 4が設けられ ている点で、 第 2実施例と異なっている。 前記切断部は、 組み立てが終 了した後、 容易に切断が可能である。 また、 前記セラミック基板嵌合孔 1 2 ' は、 前記リ一ド接続部 3 1 1 と脆弱部 3 1 5が設けられている点 で、 第 2実施例と異なっている。 前記溝 3 1 4および脆弱部 3 1 5は、 反射枠 1 6および上下電極型発光ダイォード 1 3等を取り付けた後、 第 2実施例のリ一ド接続部 2 3と同様、 簡単に分離できるようになってい る。 図 3 (口） および （ハ） は、 セラミック基板 1 2、 反射枠 1 6、 上 下電極型発光ダイオード 1 3、 導電性接続部材 1 4等を接合した状態が 示されている。  In the third embodiment, the width of the lead connecting portion 3 11 is wider than that of the second embodiment, and the cutting portion is provided with the groove 3 14 controlled by the bottom dead center control of the press. This is different from the second embodiment. The cutting part can be easily cut after the assembly is completed. Further, the ceramic substrate fitting hole 1 2 ′ is different from the second embodiment in that the lead connection part 3 11 1 and the fragile part 3 15 are provided. The groove 3 1 4 and the fragile portion 3 1 5 can be easily separated in the same manner as the lead connection portion 2 3 of the second embodiment after the reflection frame 16 and the upper and lower electrode type light emitting diodes 13 are attached. It is like this. FIGS. 3 (mouth) and (c) show a state where the ceramic substrate 12, the reflection frame 16, the upper and lower electrode type light emitting diodes 13, the conductive connection member 14, and the like are joined.
(実施例 4 )  (Example 4)
第 4図は発光ダイォードパッケージ連結体が多数設けられている他の リードフレームを説明するための図である。 第 4図において、 リードフ レーム 4 1は、 枠 4 2の中に一対の金属基板 1 1とセラミック基板嵌合 孔 1 2 ' との多数組が多数のリ一ド接続部 4 1 1によって前記枠 4 2、 他の金属基板 1 1、 あるいは、 前記セラミック基板嵌合孔 1 2 ' に接続 されている。 また、 前記金属基板 1 1は、 リード接続部 4 1 1によって、 枠 4 2、 または補強リード接続部 4 1 5と接続されている点で、 実施例 3と異なっている。 前記補強リ一ド接続部 4 1 5は、 空間部 4 1 2を多 く しても、 強度的に耐えるようにしている。 前記空間部 4 1 2は、 少な く とも一つのリ一ド接続部 4 1 1が設けられており、 前記枠 4 2、 他の 金属基板 1 1、 あるいは、 セラミック基板嵌合孔 1 2 , に接続されてい る。 また、 前記金属基板 1 1およびセラミック基板嵌合孔 1 2 ' は、 リ ード接続部 4 1 1を介さずに前記枠 4 2 (リードフレーム） に設けるこ ともできる。 FIG. 4 is a view for explaining another lead frame provided with a large number of light emitting diode package coupling bodies. In FIG. 4, the lead frame 41 is composed of a plurality of pairs of metal substrates 11 and ceramic substrate fitting holes 1 2 ′ in a frame 4 2. 4 2, connected to another metal substrate 1 1, or to the ceramic substrate fitting hole 1 2 ′. Further, the metal substrate 11 is different from the third embodiment in that the metal substrate 11 is connected to the frame 4 2 or the reinforcing lead connection portion 4 15 by the lead connection portion 4 11. The reinforcing lead connecting portion 4 15 is resistant to strength even if the space portion 4 1 2 is increased. The space part 4 1 2 is provided with at least one lead connection part 4 1 1, the frame 4 2, the other part It is connected to the metal substrate 11 or the ceramic substrate fitting hole 12. In addition, the metal substrate 11 and the ceramic substrate fitting hole 12 2 ′ can be provided in the frame 4 2 (lead frame) without the lead connecting portion 4 11.
(実施例 5 )  (Example 5)
第 5図 （a ) から （d ) は本発明の第 5実施例であり、 第 5図 （a ) は発光装置の平面図、 第 5図 （b ) は第 5図 （a ) の A— A断面図、 第 5図 （ c ) は （ィ） の B— B断面図、 第 5図 （d ) は底面図である。 第 5図 （ a ) から （ d ) において、 金属基板 5 1 とセラミック基板 5 2は、 互いに当接された一つの基板から構成されている。 前記セラミック基板 5 2は、 少なく とも一部の上面に導電膜 1 7が形成されている。 反射枠 5 6は、 前記金属基板 5 1 とセラミック基板 5 2に跨がって底部が、 た とえば、 熱硬化性樹脂接着剤等によって一体に固定されている。  FIGS. 5 (a) to (d) show a fifth embodiment of the present invention, FIG. 5 (a) is a plan view of the light emitting device, and FIG. 5 (b) is an A— of FIG. 5 (a). Fig. 5 (c) is a cross-sectional view of Fig. 5 (c), and Fig. 5 (d) is a bottom view. In FIG. 5 (a) to (d), the metal substrate 5 1 and the ceramic substrate 52 are composed of one substrate in contact with each other. The ceramic substrate 52 has a conductive film 17 formed on at least a part of its upper surface. The reflection frame 56 is integrally fixed to the bottom of the reflection frame 56 by, for example, a thermosetting resin adhesive or the like across the metal substrate 51 and the ceramic substrate 52.
前記金属基板 5 1は、 たとえば、 アルミニウム、 銅、 鉄、 またはこれ らの合金、 好ましくは銅からなり、 必要に応じて、 ニッケルと銀により 表面処理がされている。 たとえば、 前記上下電極型発光ダイオード 5 3 一 1、 5 3— 2は、 前記金属基板 5 1 の上部に下部電極 （図示されてい ない） がハンダにより取り付けられている。 また、 前記上下電極型発光 ダイオード 5 3— 1、 5 3— 2は、 それぞれの上部電極が金線リポン (または導電性金属箔） 5 4— 1、 5 4— 2によって、 セラミック基板 5 2上に形成された導電膜 5 7に、 たとえば、 ハンダにより接合される。 前記上下電極型発光ダイオード 5 3— 1、 5 3 _ 2は、 前記反射枠 5 6 のほぼ中央に設けられるとともに、 その数を任意に増加させることがで きる。 前記発光装置は、 金属基板 5 1 とセラミック基板 5 2の導電膜 5 7に図示されていない電源を接続することにより、 上下電極型発光ダイ オード 5 3— 1、 5 3— 2に電流が流れて発光する。  The metal substrate 51 is made of, for example, aluminum, copper, iron, or an alloy thereof, preferably copper, and is surface-treated with nickel and silver as necessary. For example, in the upper and lower electrode type light emitting diodes 5 3 1 1 and 5 3-2, a lower electrode (not shown) is attached to the upper part of the metal substrate 5 1 by solder. In addition, the upper and lower electrode type light emitting diodes 5 3-1 and 5 3-2 are arranged on the ceramic substrate 5 2 by the upper electrodes of the gold wire replies (or conductive metal foils) 5 4-1 and 5 4-2. For example, it is joined to the conductive film 57 formed by soldering. The upper and lower electrode type light emitting diodes 5 3-1 and 5 3 _ 2 are provided at substantially the center of the reflection frame 5 6, and the number thereof can be arbitrarily increased. In the light emitting device, when a power source (not shown) is connected to the conductive film 5 7 of the metal substrate 5 1 and the ceramic substrate 52, a current flows through the upper and lower electrode type light emitting diodes 5 3-1 and 5 3-2. Flashes.
前記上下電極型発光ダイオードの電極は、 開口部を有し、 この部分か ら光を効率良く上部に照射する。 前記開口部は、 口字状以外に、 目字状、 日字状、 コ字状等、 各種変形が可能である。 上下電極型発光ダイオード の大きさは、 1. 5mmX l . 5 mm、 1. 0 mm 1 - O mm、 0. 7 mm X 0. 7 mm, あるいは 0. 5 mmX 0. 5 mmで、 厚さ 0. 1 mm程度である。 本実施例の上下電極型発光ダイオードは、 窒化ガリウ ム系上下電極型発光ダイォードとすることができる。 前記窒化ガリゥム 系上下電極型発光ダイオードは、 下部電極、 前記下部電極の上に形成さ れた導電性基板、 前記基板の上に形成された n型窒化ガリゥム半導体層、 前記 n型窒化ガリ ウム半導体層の上に形成された量子井戸構造型活性層、 前記量子井戸構造型活性層の上に形成された p型窒化ガリ ウム半導体層、 前記 p型窒化ガリ ゥム半導体層の上に形成された上部部分電極とから構 成されている。 前記導電性基板の上に形成された p型窒化ガリゥム半導 体層、 前記 p型窒化ガリゥム半導体層の上に形成された量子井戸構造型 活性層、 前記量子井戸構造型活性層の上に形成された n型窒化ガリゥム 半導体層、 前記 n型窒化ガリゥム半導体層の上に形成された上部部分電 極とから構成することもできる。 The electrodes of the upper and lower electrode type light emitting diodes have an opening, and light is efficiently irradiated from above to the upper part. The opening can be variously modified in addition to a square shape, such as a character shape, a Japanese character shape, and a U-shape. Upper electrode type light emitting diode The size is 1.5 mmX l .5 mm, 1.0 mm 1-O mm, 0.7 mm X 0.7 mm, or 0.5 mmX 0.5 mm, and the thickness is about 0.1 mm It is. The upper and lower electrode type light emitting diode of this embodiment can be a gallium nitride based upper and lower electrode type light emitting diode. The gallium nitride-based upper / lower electrode type light emitting diode includes a lower electrode, a conductive substrate formed on the lower electrode, an n-type gallium nitride semiconductor layer formed on the substrate, and the n-type gallium nitride semiconductor. A quantum well structure type active layer formed on the layer, a p-type gallium nitride semiconductor layer formed on the quantum well structure type active layer, and formed on the p-type gallium nitride semiconductor layer It consists of an upper partial electrode. A p-type gallium nitride semiconductor layer formed on the conductive substrate, a quantum well structure-type active layer formed on the p-type gallium nitride semiconductor layer, and formed on the quantum well structure-type active layer The n-type gallium nitride semiconductor layer can also be composed of an upper partial electrode formed on the n-type gallium nitride semiconductor layer.
(比較例）  (Comparative example)
従来例の金線を超音波と熱圧着で接続した窒化ガリ ゥム系上下電極型 発光ダイォードと、 ハンダと金属部材とによって接合した本発明の窒化 ガリウム系上下電極型発光ダイオードとを比較する。 従来例は、 径が 3 0 μ mの金線 2本を用い、 窒化ガリゥム系上下電極型発光ダイォードの 上部電極とパッケージ電極の他方を超音波ワイヤーボンディングで接続 したワイヤーボンダの超音波振動により、 発光不良の不良品が約 1 0% 発生した。 さらに、 3 5 0 mAを通電した場合、 約 4 %の通電異常によ る焼けが発生した。 本発明の実施例では、 接続工程および 3 5 0 mAか ら 5 0 0 m Aの通電においても、 不良品の発生がなかった。 産業上の利用可能性  A comparison is made between a gallium nitride type upper / lower electrode type light emitting diode in which a conventional gold wire is connected to an ultrasonic wave by thermocompression bonding and a gallium nitride type upper / lower electrode type light emitting diode of the present invention joined by solder and a metal member. The conventional example uses two gold wires with a diameter of 30 μm, and ultrasonic vibration of a wire bonder in which the upper electrode of the gallium nitride upper and lower electrode type light emitting diode and the other of the package electrode are connected by ultrasonic wire bonding, Approximately 10% of defective products with poor light emission occurred. Furthermore, when 3500 mA was energized, approximately 4% of burns due to energization abnormality occurred. In the examples of the present invention, no defective product was generated even in the connection process and in the energization of 3500 mA to 500 mA. Industrial applicability
以上、 本発明の実施例を詳述したが、 本発明は、 前記実施例に限定さ れるものではない。 そして、 本発明は、 特許請求の範囲に記載された事 項を逸脱することがなければ、 種々の設計変更を行うことが可能である。 本発明の窒化ガリ ゥム系上下電極型発光ダイォードの上下電極、 金属基 板、 金属部材等の接続は、 ハンダ、 ハンダペース ト、 ハンダとフラック ス、 金一錫共晶ハンダペース ト、 インジウム系共晶ハンダ等、 公知また は周知のものを使用することができる。 本発明の窒化ガリゥム系上下電' 極型発光ダイオード、 金属基板ユニッ ト、 反射枠、 熱硬化性樹脂接着剤、 公知または周知のものを使用することができる。 また、 本発明は、 各実 施例の一部を互いに組み合わせて使用することができる。 As mentioned above, although the Example of this invention was explained in full detail, this invention is not limited to the said Example. The present invention can be modified in various ways without departing from the scope of the claims. The connection of the upper and lower electrodes, the metal substrate, the metal member, etc. of the gallium nitride based upper and lower electrode type light emitting diode of the present invention includes solder, solder paste, solder and flux, gold-tin eutectic solder paste, and indium system. Known or well-known materials such as eutectic solder can be used. The gallium nitride based vertical electrode type light emitting diode, metal substrate unit, reflection frame, thermosetting resin adhesive, known or well-known ones of the present invention can be used. In the present invention, a part of each embodiment can be used in combination with each other.

Claims

請 求 の 範 囲 The scope of the claims
1 . 金属基板と少なく とも上部に導電性膜が形成されているセラミック 基板とが互いに当接された基板と、  1. a substrate in which a metal substrate and at least a ceramic substrate having a conductive film formed thereon are in contact with each other;
前記金属基板とセラミック基板に跨がるように底部が前記基板に接着 された開口部を有する絶縁性部材からなる反射枠と、  A reflective frame made of an insulating member having an opening bonded to the substrate so as to straddle the metal substrate and the ceramic substrate;
前記反射枠の内部の金属基板に下部電極が取り付けられている少なく とも一つの上下電極型発光ダイォードと、  At least one upper and lower electrode type light emitting diode having a lower electrode attached to a metal substrate inside the reflective frame;
前記上下電極型発光ダイォードの上部電極と前記セラミック基板上の 導電性膜とを接続する少なく とも一つの導電性接続部材と、  At least one conductive connecting member connecting the upper electrode of the upper and lower electrode type light emitting diode and the conductive film on the ceramic substrate;
前記金属基板と前記上下電極型発光ダイォードの下部電極、 前記上下 電極型発光ダイォードの上部電極と前記導電性接続部材、 および前記導 電性接続部材と前記導電性膜とを接合するハンダと、  The metal substrate and the lower electrode of the upper and lower electrode type light emitting diode, the upper electrode of the upper and lower electrode type light emitting diode and the conductive connecting member, and the solder for joining the conductive connecting member and the conductive film;
から少なく とも構成されていることを特徴とする発光装置。  A light emitting device characterized in that it is configured at least.
2 . 前記基板、 反射枠、 少なく とも一つの上下電極型発光ダイオード、 少なく とも一つの導電性接続部材、 ハンダからなる発光部が複数個から 構成されていることを特徴とする請求項 1に記載された発光装置。  2. The substrate, the reflection frame, at least one upper and lower electrode type light emitting diode, at least one conductive connection member, and a plurality of light emitting portions made of solder, are formed from the plurality of the light emitting portions. Light emitting device.
3 . 前記導電性接続部材は、 少なく とも一つの金線リボンから構成され ていることを特徴とする請求項 1または請求項 2に記載された発光装置。 3. The light emitting device according to claim 1 or 2, wherein the conductive connecting member is composed of at least one gold wire ribbon.
4 . 前記金属基板は、 ヒー トシンク付き金属基板で、 セラミック基板と の厚さがほぼ等しいことを特徴とする請求項 1から請求項 3のいずれか 1項に記載された発光装置。 4. The light emitting device according to any one of claims 1 to 3, wherein the metal substrate is a metal substrate with a heat sink and has a thickness substantially equal to that of the ceramic substrate.
5 . 前記発光部は、 直列、 並列、 あるいは直並列に接続されていること を特徴とする請求項 1から請求項 4のいずれか 1項に記載された発光装 置。  5. The light emitting device according to any one of claims 1 to 4, wherein the light emitting units are connected in series, in parallel, or in series and parallel.
6 . 前記反射枠内には、 前記上下電極型発光ダイオードを封止する材料 が設けられていることを特徴とする請求項 1から請求項 5のいずれか 1 項に記載された発光装置。  6. The light emitting device according to any one of claims 1 to 5, wherein a material for sealing the upper and lower electrode type light emitting diodes is provided in the reflection frame.
7 . 前記反射枠内または前記反射枠の上面には、 前記上下竃極型発光ダ ィォードから発する光をほぼ白色光に変換する少なく とも一つの蛍光体 を含有する蛍光膜が取り付けられていることを特徴とする請求項 1から 請求項 6のいずれか 1項に記載された発光装置。 7. At least one phosphor that converts light emitted from the upper and lower electrode type light emitting diodes into substantially white light in the reflection frame or on the upper surface of the reflection frame. 7. The light emitting device according to claim 1, wherein a fluorescent film containing is attached.
8 . 接続部により接続された多数の金属基板と、 前記金属基板の一方に セラミック基板の嵌合部が設けられた金属基板集合体と、  8. a number of metal substrates connected by connecting portions; a metal substrate assembly in which a ceramic substrate fitting portion is provided on one of the metal substrates;
前記各嵌合部に設けられ、 少なく とも上部に導電性膜が形成されたセ ラミック基板と、  A ceramic substrate provided at each of the fitting portions and having a conductive film formed on at least an upper portion thereof;
各一対の前記金属基板と前記セラミック基板に跨がるように底部が接 着された開口部を有する絶縁性部材からなる反射枠と、  A reflective frame made of an insulating member having an opening with a bottom attached so as to straddle each pair of the metal substrate and the ceramic substrate;
から少なく とも構成されている発光装置用パッケージ集合体。  A package assembly for a light-emitting device that is configured at least.
9 . 前記接続部は、 リード状接続部からなり、 金属基板の三方にリード 状接続部が設けられていることを特徴とする請求項 8に記載された発光 装置用パッケージ集合体。  9. The package assembly for a light-emitting device according to claim 8, wherein the connection portion includes a lead-like connection portion, and the lead-like connection portion is provided on three sides of the metal substrate.
1 0 . 前記リード接続部は、 脆弱部が設けられ、 容易に分離できること を特徴とする請求項 8または請求項 9に記載された発光装置用パッケ一 ジ集合体。  10. The package assembly for a light-emitting device according to claim 8, wherein the lead connection portion is provided with a fragile portion and can be easily separated.
1 1 . 前記リード接続部には、 下死点制御により制御された深さの溝か らなる切断部が設けられていることを特徴とする請求項 8または請求項 9に記載された発光装置用パッケージ隼合体。  11. The light emitting device according to claim 8 or 9, wherein the lead connecting portion is provided with a cutting portion having a groove having a depth controlled by bottom dead center control. Package assembly.
PCT/JP2008/058443 2007-05-09 2008-04-24 Light emitting device and package assembly for light emitting device WO2008139981A1 (en)

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