EP1936704B1 - Semiconductor light emitting device package - Google Patents

Semiconductor light emitting device package Download PDF

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Publication number
EP1936704B1
EP1936704B1 EP07250477.2A EP07250477A EP1936704B1 EP 1936704 B1 EP1936704 B1 EP 1936704B1 EP 07250477 A EP07250477 A EP 07250477A EP 1936704 B1 EP1936704 B1 EP 1936704B1
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EP
European Patent Office
Prior art keywords
light emitting
emitting device
substrate
electrodes
device package
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Active
Application number
EP07250477.2A
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German (de)
French (fr)
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EP1936704A2 (en
EP1936704A3 (en
Inventor
Geun Ho Kim
Seung Yeob Lee
Yu Ho Won
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LG Electronics Inc
LG Innotek Co Ltd
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LG Electronics Inc
LG Innotek Co Ltd
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Priority to KR1020060131732A priority Critical patent/KR100845856B1/en
Application filed by LG Electronics Inc, LG Innotek Co Ltd filed Critical LG Electronics Inc
Publication of EP1936704A2 publication Critical patent/EP1936704A2/en
Publication of EP1936704A3 publication Critical patent/EP1936704A3/en
Application granted granted Critical
Publication of EP1936704B1 publication Critical patent/EP1936704B1/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62Protection against overvoltage, e.g. fuses, shunts
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Description

  • The present invention relates to a light emitting device package, and more particularly, to a light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance.
  • Light emitting diodes (LEDs) are well known as a type of semiconductor light emitting device which converts current to light, to emit light. Since a red LED using GaAsP compound semiconductor became commercially available in 1962, it has been used, together with a GaP:N-based green LED, as a light source in electronic apparatuses, for image display.
  • The wavelength of light emitted from such an LED depends on the semiconductor material used to fabricate the LED. This is because the wavelength of the emitted light depends on the band gap of the semiconductor material representing the energy difference between valence-band electrons and conduction-band electrons.
  • Gallium nitride (GaN) compound semiconductor has been highlighted in the field of high-power electronic devices because it exhibits a high thermal stability and a wide band gap of 0.8 to 6.2 eV. One of the reasons why GaN compound semiconductor has been highlighted is that it is possible to fabricate a semiconductor layer capable of emitting green, blue, or white light, using GaN in combination with other elements, for example, indium (In), aluminum (Al), etc.
  • Thus, it is possible to adjust the wavelength of light to be emitted, using GaN in combination with other appropriate elements. Accordingly, where GaN is used, it is possible to appropriately determine the materials of a desired LED in accordance with the characteristics of the apparatus to which the LED is applied. For example, it is possible to fabricate a blue LED useful for optical recording or a white LED to replace a glow lamp.
  • On the other hand, initially-developed green LEDs were fabricated using GaP. Since GaP is an indirect transition material causing a degradation in efficiency, the green LEDs fabricated using this material cannot in practice produce light of pure green. By virtue of the recent success in growing an InGaN thin film, however, it has been possible to fabricate a high-luminescent green LED.
  • By virtue of the above-mentioned advantages and other advantages of GaN-based LEDs, the GaN-based LED market has grown rapidly. Also, techniques associated with GaN-based electro-optic devices have developed rapidly since GaN-based LEDs became commercially available in 1994.
  • GaN-based LEDs have been developed to exhibit light emission efficiency superior to that of glow lamps. Currently, the efficiency of GaN-based LEDs is substantially equal to that of fluorescent lamps. Thus, it is expected that the GaN-based LED market will grow significantly.
  • By virtue of such technical development, the application of GaN-based LEDs has been extended not only to display devices, but also to an LED backlight substituted for a cold cathode fluorescent lamp (CCFL) used for a backlight of a liquid crystal display (LCD) device, a white LED lighting device usable as a substitute for a fluorescent lamp or a glow lamp, and a signal lamp.
  • Meanwhile, in addition to LEDs driven by DC power, high-voltage AC LED chips, which can be driven even by general AC power, have also been developed. For such an application, LEDs need to exhibit a high operating voltage, a small drive current, a high light emission efficiency, and a high brightness at the same electric power.
  • Referring to FIG. 1, the structure of a general LED is illustrated. As shown in FIG. 1, a buffer layer 2, an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 are sequentially deposited over a substrate 1 made of, for example, sapphire. Mesa patterning is then performed such that the n-type semiconductor layer 3 is exposed. Thereafter, a current diffusion layer 6 is formed on the p-type semiconductor layer 5, as a transparent electrode having a high light transmissivity.
  • For electrical connection of the LED to an external circuit, a p-type electrode 7 and an n-type electrode 8 are subsequently formed over the p-type semiconductor layer 5 and n-type semiconductor layer 3, respectively. Thus, an LED structure 10 is completely formed.
  • When a voltage from the external circuit is applied between the p-type electrode 7 and the n-type electrode 8 in the LED, holes and electrons enter the p-type electrode 7 and n-type electrode 8, respectively. The holes and electrons are re-coupled in the active layer 4, so that surplus energy is converted into light which is, in turn, externally emitted through the transparent electrode and substrate.
  • At this time, static electricity and a surge voltage may be applied to the p-type electrode 7 and n-type electrode 8 electrically connected to the external circuit, so that overcurrent may flow through the LED structure 10. In this case, the semiconductor may become damaged, so that the LED can be no longer used.
  • In order to solve this problem, a voltage regulator is electrically connected to the LED. When overcurrent is generated, the voltage regulator bypasses the generated overcurrent, thereby preventing damage to the LED chip.
  • For such a voltage regulator, a zener diode using zener breakdown is mainly used. When a diode is fabricated to have a very high impurity concentration, it has a space charge region width. In this case, a strong electric field is generated even at a small reverse voltage.
  • The strong electric field generated as above releases covalent bonds of a lattice, thereby producing a number of free electrons and a number of free holes. As a result, an abrupt reverse current flows under the condition in which there is little voltage variation. In accordance with such a zener diode function, it is possible to prevent damage of the LED chip.
  • In an example of a conventional package using such a zener diode, a cup-shaped curved portion is formed at a lead frame, and an LED is bonded to the curved portion of the lead frame. In this case, a voltage regulator such as a zener diode is bonded to another lead frame of the package. The lead frames are then wire-bonded to connect the voltage regulator and LED in parallel.
    In the above-mentioned conventional method, there may be a degradation in electrical and optical characteristics and an increase in costs because it is necessary to form the cup-shaped curved portion, and to connect the voltage regulator, which is separately prepared, using an off chip method.
    A prior art document US 2005/121686 discloses a light emitting device package comprising:a substrate comprising a first surface, a second surface, and at least one through hole, a light emitting device on the first surface, a first electrode on the first surface, the first electrode electrically connected to the light emitting device,a second electrode on the second surface, the second electrode electrically connected to the first electrode; and a zener diode electrically connected to the first electrode
    The present invention seeks to provide an improved light emitting device package.
    Embodiments of the present invention can provide a light emitting device package capable of achieving easy formation of a reflection film adapted to forwardly reflect light laterally emitted from a light emitting device, achieving an enhancement in voltage withstand characteristics, and achieving easy external emission of heat through a ceramic or silicon body exhibiting a superior thermal conductivity.
    Additional advantages and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
    The invention is recited in the appended independent claim; some features of embodiments are recited in the dependent claims.
  • Embodiments of the invention will now be described, by way of non-limiting example only, with reference to the drawings, in which:
    • FIG. 1 is a sectional view illustrating an example of a general light emitting device;
    • FIG. 2 is a perspective view illustrating a light emitting device package according to a first embodiment of the present invention;
    • FIGs. 3 to 10 are sectional views illustrating the first embodiment of the present invention, in which:
      • FIG. 3 is a sectional view illustrating formation of a mask layer on an upper substrate;
      • FIG. 4 is a sectional view illustrating formation of a mounting hole;
      • FIG. 5 is a sectional view illustrating formation of a diffusion layer;
      • FIG. 6 is a sectional view illustrating formation of a reflection film;
      • FIG. 7 is a sectional view illustrating formation of through holes in a lower substrate;
      • FIG. 8 is a sectional view illustrating formation of a metal film in each through hole; and
      • FIG. 9 is a sectional view illustrating formation of a metal layer;
    • FIG. 10 is a sectional view illustrating the light emitting device package according to the first embodiment of the present invention;
    • FIG. 11 is a sectional view illustrating an example of a method for mounting a light emitting device;
    • FIG. 12 is a sectional view illustrating a state in which a plurality of light emitting devices are mounted in the package according to the first embodiment of the present invention;
    • FIG. 13 is a perspective view illustrating a light emitting device package as disclosed in the present application;
    • FIG. 14 is a sectional view illustrating the light emitting device package of Figure 13;
    • FIG. 15 is a sectional view illustrating a state in which a plurality of light emitting devices are mounted in the package of Figures 13 and 14; and
    • FIG. 16 is a sectional view illustrating a light emitting device package as disclosed in the present application.
  • Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the drawings.
  • The present invention may, however, be embodied in many alternate forms and should not be construed as limited to the embodiments set forth herein. Accordingly, while the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intent to limit the invention to the particular forms disclosed, but on the contrary, the invention is to cover all modifications, equivalents, and alternatives falling within the scope of the invention as defined by the claims.
  • Like numbers refer to like elements throughout the description of the figures. In the drawings, the thickness of layers and regions are exaggerated for clarity.
  • It will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. It will also be understood that if part of an element, such as a surface, is referred to as "inner," it is further from the outside of the device than other parts of the element.
  • In addition, relative terms, such as "beneath" and "overlies", may be used herein to describe one layer's or region's relationship to another layer or region as illustrated in the figures.
  • It will be understood that these terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. Finally, the term "directly" means that there are no intervening elements. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
  • It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms.
  • These terms are only used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second region, layer or section may be termed a first region, layer or section without departing from the teachings of the present invention.
  • <First Embodiment>
  • Referring to FIG. 2, a light emitting device package according to a first embodiment of the present invention is illustrated. The light emitting device package includes an upper substrate 100 and a lower substrate 200. A light emitting device 300 is mounted on the lower substrate 200. The lower substrate 200 is made of a material having a heat transfer coefficient. The upper substrate 100 is bonded to the lower substrate 200, and is provided with a reflection film for forwardly reflecting light emitted from the light emitting device 300.
  • The material of the lower substrate 200 may be ceramic such as SiC, AlN, or graphite having a high heat transfer coefficient. Here, the ceramic means a material such as an oxide, nitride, or carbide containing mineral elements as major components. Such a material, namely, the oxide, nitride or carbide, may be used for the lower substrate 200.
  • In addition, PCB, BeO, SiO, Si, Al, AlOx, PSG, a synthetic resin (plastic) material such as epoxy resin, ceramic or Al2O3 may be used.
  • The reason why the material having a high heat transfer coefficient should be used is to rapidly transfer heat generated from the light emitting device 300 to a heat sink, PCB, or metal core PCB (MCPCB). It is preferable to use a material having a heat transfer coefficient of 100 W/mk or more.
  • In the present embodiment the upper substrate 100 is made of a semiconductor such as silicon (Si). In the upper substrate 100 made of such a semiconductor, zener diodes are formed in order to achieve an improvement in voltage withstand characteristics.
  • A process for manufacturing the light emitting device package according to the first embodiment will now be described.
  • First, a mask layer 110 for an etching process is formed to form a mounting hole in the upper substrate 100.
  • For example, as shown in FIG. 3, a wet etch mask is formed over the upper substrate 100 which is made of silicon such that an anisotropic wet etch can be implemented for the upper substrate 100. Thereafter, the wet etch mask is removed from a region where the mounting hole 120 (FIG. 4) will be formed, to expose a corresponding portion of the upper substrate 100. The mask layer 110 is then formed, as shown in FIG. 3.
  • Next, as shown in FIG. 4, a wet etch process is carried out, using an etching solution capable of anisotropically wet-etching silicon, such that a through hole is formed through the upper substrate 100. Thus, the mounting hole 120 is formed. After the formation of the mounting hole 120, the remaining mask layer 110 is completely removed.
  • Where the mounting hole 120 is formed in accordance with the anisotropic wet etch, the formation of the mounting hole 120 may be carried out such that the mounting hole has an inclined edge surface with a certain inclination angle θ, as shown in FIG. 4.
  • The inclination angle θ is an angle defined between the inclined surface of the mounting hole 120 and a bottom surface arranged beneath the mounting hole 120 without being formed with the mounting hole 120. The inclination angle θ may for example range from 35° to 70°.
  • The inclined surface will form a reflection surface for extraction of light laterally emitted from the light emitting device which will be subsequently mounted. Accordingly, it is most theoretically preferred that the inclination angle θ be 54.7°, taking into consideration the distribution and direction of light horizontally emitted from the light emitting device. However, practically, the inclination angle θ may range from 50° to 60°.
  • Meanwhile, the light emitting device may have inclined side surfaces. Taking into consideration such conditions, the inclination angle θ of the mounting hole 120 may be determined to be within a range of 35° to 70°.
  • Zener diodes can be formed in the upper surface 100 formed with the mounting hole 120, in order to compensate for weak voltage withstand characteristics of the light emitting device. Hereinafter, a method for forming such zener diodes will be described.
  • In a certain region of the upper substrate 100, which is doped with an impurity in an appropriate concentration, an impurity having a conductivity opposite to that of the impurity doped in the upper substrate 100 is diffused to form a diffusion layer 131. Thus, zener diodes 130 (FIG. 5) are formed.
  • For such a selective impurity diffusion, as shown in FIG. 5, a diffusion mask 132 is first deposited over the upper substrate 100. Thereafter, the diffusion mask 132 is patterned, in order to enable the impurity having the conductivity type opposite to that of the upper substrate 100 to penetrate into the upper substrate 100.
  • After the patterning enabling the selective diffusion of the impurity in the upper substrate 100 through the diffusion mask 132, a diffusion process is carried out in an impurity diffusing furnace, to form the diffusion layer 131.
  • After completion of the diffusion process, the diffusion mask 132 is removed, and an insulating layer is deposited over the upper surface 100. Thereafter, a pad open process (not shown) may be carried out, to electrically connect the zener diodes 130 to the external circuit.
  • After the formation of the diffusion layer 131 for forming the zener diodes 130, a reflection film 140 exhibiting a high reflectivity of 70% or more at wavelengths in the visible light range, the ultraviolet light range, and the infrared light range is formed on the inner side wall surface (inclined surface) of the mounting hole 120, in the present embodiment using Ag, Al, Mo, or Cr, in order to enhance the reflectivity of the inner side wall surface.
  • Generally, metal thin films exhibit a high reflectivity, as compared to other materials, because they have a unique metallic gloss. However, it is advantageous to form a reflection film having a reflectivity of a certain value or more, in order to effectively externally guide light emitted from the light emitting device.
  • The reflectivity of the reflection film 140 at wavelengths in the visible light range, the ultraviolet light range, and the infrared light range will depend on the material of the reflection film 140 and the formation method for the reflection film 140. However, it is possible to form the reflection film 140, which has a reflectivity of 70% or more, by using a material such as Ag, Al, Mo, or Cr, as described above, and a formation method which will be described hereinafter.
  • The reflection film 140 may be formed by depositing a metal thin film using a semiconductor process such as a sputtering process or an evaporation process, and patterning the metal thin film in accordance with a photolithography process such that the metal thin film remains only in desired regions.
  • Alternatively, the photolithography process may be first carried out to deposit the reflection film 140. In this case, a lift-off process may be subsequently carried out. In accordance with another method, a seed metal is deposited, and then patterned in accordance with a photolithography process. A metal plating process is then carried out for the pattered seed metal, to form the reflection film 140.
  • Thereafter, as shown in FIG. 7, through holes 210 are formed through the lower substrate 200, which in the present embodiment is a ceramic substrate having a high heat transfer coefficient and a superior insulation property, using any convenient method such as, for example, a punching technique or a laser machining technique.
  • For the ceramic material, which has a high heat transfer coefficient and a superior insulation property, AlN, SiC, graphite, etc. may be used. It is preferable, but not essential, to use a ceramic material having a high heat transfer coefficient of 100 W/mk or more.
  • The through holes 210 may be formed in regions where the mounting hole 120 of the upper substrate 100 is not positioned under the condition in which the upper substrate 100 and lower substrate 100 are bonded to each other in an aligned state.
  • Alternatively, the through holes 210 may be formed in regions arranged outside a region where the light emitting device mounted to the upper substrate 100 will be bonded to the lower substrate 200, but arranged within a region corresponding to the mounting hole 120.
  • Where the through holes 210 are formed outside the mounting hole 120, as described above, they may be positioned such that dicing lines, along which the package structure will be separated into unit packages, extends through the through holes 210. Alternatively, package dicing may be carried out such that the through holes 210 are positioned inside the dicing lines.
  • The through holes 210 may have a vertical structure having a uniform cross-section (namely, the size of the through hole at the upper surface of the lower substrate 200 is identical to the size of the through hole at the lower surface of the lower substrate 200). Alternatively, the through holes 210 may have a vertical structure having a cross-section varying such that the size of the through hole at the upper surface of the lower substrate 200 is larger or smaller than the size of the through hole at the lower surface of the lower substrate 200.
  • Subsequently, as shown in FIG. 8, a process for forming a metal film 220 made of a metal or other conductive material on the through holes 210 is carried out in accordance with a screen printing method or the like. The metal film 220 may completely fill each through hole 210, or may cover the inner surface of each through hole 210 in the form of a coating.
  • Thereafter, as shown in FIG. 9, metal layers are formed, as first and second electrodes 230 and 240, on a surface of the lower substrate 200, on which the light emitting device will be mounted, and a portion of the lower substrate 200 which will be electrically connected to the external circuit (not shown), respectively, are then patterned. For the convenience of description, each metal layer connected to the light emitting device will be referred to as a "first electrode 230", whereas each metal layer electrically connected to the external circuit will be referred to as a "second electrode 240".
  • Each first electrode 230 formed on the substrate portion, to which the light emitting device is bonded, is made of a metal exhibiting a high reflectivity at wavelengths in the visible light range, the ultraviolet light range, and the infrared light range, in the present embodiment, a metal such as Al, Ag, Cr, or Mo. Accordingly, light downwardly emitted from the light emitting device and light downwardly reflected from various mediums arranged above the light emitting device can be upwardly re-reflected. Thus, a further enhanced light extraction efficiency can be obtained.
  • After completion of the above-described processes for the upper substrate 100 and lower substrate 200, the upper substrate 100 and lower substrate 200 are bonded to each other in an aligned state. Thereafter, the light emitting device 300 is bonded to the mounting hole 120 of the upper substrate 100 such that the light emitting device 300 is electrically connected to the first electrodes 230.
  • Where the light emitting device 300 has a vertical structure, namely, where the p-type electrode 310 and n-type electrode 320 are arranged at opposite surfaces, as shown in FIG. 11, the bonding of the light emitting device 300 is achieved by attaching one surface of the lower electrode of the light emitting device 300 (for example, the p-type electrode 310) to one first electrode 230 formed on the lower substrate 200, using a conductive epoxy resin 250, and electrically connecting the upper electrode of the light emitting device 300 (for example, the n-type electrode 320) to the other first electrode 230 of the lower substrate 200 in accordance with a wire bonding process using a wire 260.
  • On the other hand, where the light emitting device 300 has a horizontal structure, the bonding of the light emitting device 300 is achieved by bonding the insulating substrate portion of the light emitting device 300 to the first electrodes 230 of the lower substrate 200 or to the ceramic substrate in accordance with a flip chip bonding method, and electrically connecting the p-type electrode and n-type electrode arranged on the upper surface of the light emitting device 300 to the first electrodes 230 of the lower substrate 200 (not shown).
  • After the electrical connection of the light emitting device 300 to the first electrodes 230 of the lower substrate 200, a filler 400 such as a transparent epoxy resin or silicone gel may fill the mounting holes 120, in order to achieve an enhancement in light extraction efficiency.
  • On the other hand, when it is desired to change the wavelength of the light emitted from the light emitting device 300, phosphors may be contained in the filler 400 which may for example be a transparent epoxy resin or silicone gel.
  • For example, where a blue light emitting device is used for the light emitting device 300, it is possible to realize emission of white light by adding yellow phosphors to the filler 400, and thus, enabling generation of a mixture of blue light and yellow light.
  • Although one light emitting device 300 may be mounted in the mounting hole 120, a plurality of light emitting devices 300, which emit light of the same color, may be mounted in the mounting hole 120, as shown in FIG. 12. Alternatively, light emitting devices, which emit red (R) light, green (G) light, and blue (B) light, respectively, may be mounted in the mounting hole 120, to realize a white light source.
  • Where a plurality of light emitting devices 300 are mounted, as described above, a plurality of first electrodes 230 may be formed for the mounting of the light emitting devices 300. A part of the plural first electrodes 230 may be bonded, in common, to at least two of the light emitting devices 300.
  • Thereafter, the package structure, which is formed by the upper substrate 100 and lower substrate 200 bonded to each other, as described above, is separated into individual packages. Thus, light emitting device packages are completely formed.
  • Meanwhile, the light emitting packages may be fabricated by separating the package structure including the substrates 100 and 200 into individual packages in accordance with a dicing process for mechanical separation of the substrates 100 and 200, and then bonding light emitting devices 300 to the separated packages, respectively.
  • A light emitting device package will now be described with reference to FIGs. 13 and 14. The light emitting device package includes an upper substrate 500 and a lower substrate 600. A light emitting device 300 is mounted on the lower substrate 600. The upper substrate 500 is bonded to the lower substrate 600, and is provided with a reflection film 510 for forwardly reflecting light emitted from the light emitting device 300.
  • In the lower substrate 600, which in the present embodiment is a silicon substrate, zener diodes 610 are formed to achieve an improvement in the voltage withstand characteristics of the light emitting device 300.
  • A molding epoxy resin is used for the upper substrate 500.
  • The upper substrate 500 or lower substrate 600 may for example be made of a material selected from PCB, BeO, SiO, Si, Al, AlOx, PSG, a synthetic resin (plastic) material such as epoxy resin, ceramic, and Al2O3. The skilled person will be aware of other suitable materials.
  • Through holes 620 are formed through the lower substrate 600, using any suitable technique, such as a bulk micro machining technique or a dry etch method. FIG. 14 illustrates that the through holes 620 are formed using a wet etch process.
  • When the lower substrate 600 is subjected to a wet etch process at opposite sides of the lower substrate 600, through holes 620, the sidewalls of which have an inclination, are formed at the opposite sides of the lower substrate 600, as shown in FIG. 14.
  • When metal layers for formation of first electrodes 230 and second electrodes 240 are formed at the upper and lower ends of the through holes 620, a metal film 220 is formed in each through hole 620. Thus, the first electrodes 230 and second electrodes 240 are electrically connected by the metal film 220.
  • Each first electrode 230, which is formed in a region where the light emitting device 300 is bonded, is made of a metal exhibiting a high reflectivity at wavelengths in the visible light range, the ultraviolet light range, and the infrared light range, for example, a metal such as Al, Ag, Cr, or Mo. Accordingly, it is possible to effectively reflect light emitted from the light emitting device 300, and thus, to achieve an enhancement in light extraction efficiency.
  • The lower substrate 600 has superior heat transfer characteristics of about 140 W/mk. Also, the lower substrate 600, which can be subjected to a semiconductor process, can have a reduced height. Accordingly, it is possible to achieve a reduction in thermal resistance.
  • Where the metal film 220 formed in each through hole 620 does not exhibit a desired conductivity, it may be possible to reduce the resistance of the metal film 220, using an electroplating method.
  • The process for forming the zener diodes 610 in the lower substrate 600 may be identical to the process for forming the zener diodes 130 in the upper substrate 10 in the package according to the invention. An impurity having a conductivity opposite to that of the lower substrate 600 is doped in the lower substrate 600, to form a diffusion layer 611.
  • As described above, the upper substrate 500 may be formed using a molding epoxy resin. When a mounting hole 520 is molded in the molding process, the inclination of the edge surface of the mounting hole 520 is set such that light laterally emitted from the light emitting device 300 can be forwardly reflected. A metal film having a high reflectivity is formed, as the reflection film 510, on the inner side wall surface (edge surface) of the mounting hole 520, in order to achieve a maximum reflection efficiency.
  • After completion of the above-described process, the upper substrate 500 and lower substrate 600 are bonded to each other in an aligned state.
  • Thereafter, the light emitting device 300 and first electrodes 230 are electrically connected. A filler 700 may then fill the mounting hole 520, to which the light emitting device 300 is bonded, using a transparent epoxy resin or silicone gel. Of course, phosphors may be contained in the filler 700, as in the first embodiment.
  • A plurality of light emitting devices 300, which emit light of the same color, may be mounted, as shown in FIG. 15, in order to achieve an enhancement in light power. Alternatively, light emitting devices 300, which emit red (R) light, green (G) light, and blue (B) light, respectively, may be mounted, to realize a white light source.
  • The remaining configurations may be identical to those of the package of the present invention, and so, no description thereof will be given.
  • A light emitting device package will now be described with reference to FIG. 16. The light emitting device package includes an upper substrate 500 and a lower substrate 600. The lower substrate 600 is made of semiconductor such as silicon, and is formed with through holes 620 each having an inclination in one direction. The upper substrate 500 is formed with a mounting hole 520 for mounting a light emitting device 300.
  • The upper substrate 500 or lower substrate 600 may for example be made of a material selected from PCB, BeO, SiO, Si, Al, AlOx, PSG, a synthetic resin (plastic) material such as epoxy resin, ceramic, and Al2O3.
  • A reflection film 511 is formed around the light emitting device 300. The reflection film 511 may extend along the inner side wall surface of the mounting hole 520 and the surface of the mounting hole 520 where the light emitting device 300 is mounted.
  • Each through hole 620 of the lower substrate 600 is formed to have an inclination in a certain direction, in accordance with a wet etch process carried out in that direction. A metal film 220 is formed in each through hole 620.
  • FIG. 16 illustrates the case in which the light emitting device 300 has a vertical structure. As described above, current is applied, via the lower electrode 310 and upper electrode 320, to the light emitting device 300, which has a vertical structure.
  • The light emitting device 300 includes a support layer 330. The support layer 330 is attached to one of the first electrodes 230, using a conductive epoxy resin 250.
  • Where the light emitting device 300 is formed on the support layer 330, the lower electrode 310 of the light emitting device 300 may include an ohmic electrode, and a reflection electrode arranged beneath the ohmic electrode. If necessary, a reflection electrode having ohmic characteristics (NiAg or NiAu-based reflection electrode) may be used.
  • The remaining configurations are identical to those of the package of the present invention, and so, no description thereof will be given.
  • Thus, it is intended that the present invention covers modifications and variations, provided they come within the scope of the claims.

Claims (6)

  1. A light emitting device package comprising:
    a first substrate (200) of a ceramic material having a first surface, a second surface, and two through holes (210), and a metal or a conductive film (220) formed in each through hole (210);
    a second semiconductor substrate (100) bonded to the first substrate (200), the second substrate (100) having a light emitting device mounting hole (120), and a reflection film (140) formed on a side wall surface of the mounting hole (120), wherein the second substrate (100) has a first conductivity;
    two first electrodes (230) arranged on the first surface, each first electrode (230) being connected to the metal or the conductive film formed in an associated one of the through holes (210);
    two second electrodes (240) arranged on the second surface, each second electrode (240) being connected to an associated one of the first electrodes (230) via the metal or conductive film in an associated one of the through holes (210);
    one light emitting device (300) arranged in the mounting hole (120), and electrically connected to the first electrodes (230); and
    two diffusion layers (131) each located in the second substrate (100) and extending from a surface of the second substrate (100) facing the first substrate (200) into the second substrate (100) to a depth which is less than the thickness of the second substrate (100), each of the diffusion layers (131) having a second conductivity that is opposite to the first conductivity,
    wherein the two diffusion layers (131) and the second substrate (100) form two corresponding zener diodes (130),
    wherein each of the two zener diodes (130) is electrically connected to the light emitting device (300) via an associated one of the two first electrodes (230),
    wherein an insulating layer is disposed between the second substrate (100) and each of the first electrodes (230), the insulating layer comprising through openings, a contact pad being provided inside of each of said through openings, each of the Zener diodes (130) being electrically connected to an associated one of the first electrodes (230) through an associated one of said contact pads.
  2. The light emitting device package according to claim 1, wherein the ceramic material comprises at least one of AlN, SiC, and Graphite.
  3. The light emitting device package according to claim 1, wherein the first substrate (200) has a heat transfer coefficient of 100 W/mK or more.
  4. The light emitting device package according to claim 1, wherein the through holes are fully or partially filled with the metal.
  5. The light emitting device package according to claim 1, wherein each of the first electrodes (230) comprises at least one of Al, Ag, Cr, and Mo.
  6. The light emitting device package according to claim 1, wherein the reflection film comprises at least one metal of Al, Ag, Cr, and Mo, or has a reflectivity of 70% or more.
EP07250477.2A 2006-12-21 2007-02-06 Semiconductor light emitting device package Active EP1936704B1 (en)

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US20080149962A1 (en) 2008-06-26
KR100845856B1 (en) 2008-07-14
JP5237566B2 (en) 2013-07-17
TW200828633A (en) 2008-07-01
EP1936704A3 (en) 2010-08-04
US8546838B2 (en) 2013-10-01
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US20110278627A1 (en) 2011-11-17
US8097896B2 (en) 2012-01-17
CN102646778A (en) 2012-08-22
CN101207050A (en) 2008-06-25
US20110278626A1 (en) 2011-11-17
KR20080057876A (en) 2008-06-25
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JP2008160046A (en) 2008-07-10
EP1936704A2 (en) 2008-06-25

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