TWI463697B - Light-emitting diode and method for making the same - Google Patents

Description

Light-emitting diode and manufacturing method thereof

The present invention relates to a light-emitting diode, and more particularly to a light-emitting diode having better current spreading uniformity and a method of fabricating the same.

A Light Emitting Diode (LED) is a semiconductor component that converts current into light of a specific wavelength range. The light-emitting diode is widely used in the field of illumination because of its high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life.

The LED typically includes a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. Applying a voltage across the LED, holes and electrons will recombine in the active layer, radiating photons. One of the problems faced by LEDs in the application process is their light efficiency. Since photons are generated by current flowing in the active layer, the light extraction efficiency of the LED is greatly related to the uniformity of current distribution on the surface of the LED device. In the actual application process, in order to prevent the light emitted by the light-emitting diode from being blocked by the electrode, the area of the electrode is usually set to be relatively small, and the current density at the position below the electrode will be larger, and away from the electrode position. The current density is small, so that the current distribution on the surface of the light-emitting diode is not uniform. There is no current flowing through the active layer away from the edge of the electrode, so that its luminous efficiency is low.

In view of the above, it is necessary to provide a light-emitting diode having better current spreading uniformity.

A light emitting diode comprising a substrate and a P-GaN layer, an active layer and an n-GaN layer sequentially formed on the substrate. The light emitting diode further includes an electrode layer that is provided with a surface of the n-GaN layer. The n-GaN layer includes a first diffusion portion and a second diffusion portion. The first diffusion portion is adjacent to the electrode layer, and the second diffusion portion is disposed on a side of the first diffusion portion away from the electrode layer, and a doping concentration of the first diffusion portion is smaller than a doping concentration of the second diffusion portion .

A method for fabricating a light emitting diode, comprising the steps of:

Providing a substrate;

Forming a P-GaN layer, an active layer, and an n-GaN layer sequentially on the substrate;

Providing a first diffusion portion and a second diffusion portion on a surface of the n-GaN layer, wherein a doping concentration of the first diffusion portion is smaller than a doping concentration of the second diffusion portion during the manufacturing process;

An electrode layer is formed on the surface of the n-GaN layer.

Compared with the prior art, the present invention provides a first diffusion portion and a second diffusion portion arranged in a direction away from the electrode, since the doping concentration of the first diffusion portion is smaller than the doping concentration of the second diffusion portion, that is, the first diffusion The resistivity of the portion is greater than the resistivity of the second diffusing portion. Since the current will flow toward a place where the resistivity is small. Therefore, the first diffusion portion and the second diffusion portion having different doping rates can be distributed to uniformize the current on the surface of the light-emitting diode, thereby improving the light-emitting efficiency of the light-emitting diode.

The invention is further illustrated by the following specific examples.

Referring to FIG. 1, a light-emitting diode 100 according to a first embodiment of the present invention includes a substrate 11 and a p-GaN layer 12, an active layer 13, an n-GaN layer 14, and a specular reflection layer 15 which are sequentially stacked on the substrate 11. And electrode layer 16. At the same time, the LED 100 further includes a first diffusion portion 17 and a second diffusion portion 18.

The substrate 11 is made of a material having high thermal conductivity, and may be a substrate made of a metal material such as copper, aluminum, nickel, silver, gold or the like, or an alloy formed of any two or more metals, or a ceramic having good thermal conductivity. The substrate is a germanium substrate or a germanium substrate. In the present embodiment, the substrate 11 is a metallic nickel layer having high thermal conductivity. After the p-GaN layer 12, the active layer 13, the n-GaN layer 14 and the specular reflection layer 15 are grown on the sapphire substrate by MOCVD, the sapphire substrate is peeled off by laser cutting, and then bonded or The plating method combines the p-GaN layer 12, the active layer 13, the n-GaN layer 14, and the specular reflection layer 15 with the thermally conductive substrate 11.

The p-GaN layer 12, the active layer 13, and the n-GaN layer 14 are sequentially laminated on the surface of the substrate 11. When a positive voltage is applied to the surface of the p-GaN layer 12, and a negative voltage is applied to the surface of the n-GaN layer 14, the holes in the p-GaN layer 12 and the n-GaN layer 14 electrons will recombine in the active layer, and the energy is photon. The form is emitted so that the light emitting diode emits light. In this embodiment, the light emitting layer is made of a GaN material. The material for forming the light-emitting layer may further include AlGaN, InGaN, or the like, as needed.

The specular reflection layer 15 is disposed between the p-GaN layer 12 and the substrate 11, and the specular reflection layer 15 is made of a metal such as silver, nickel, aluminum, copper, or gold. The purpose of the specular reflection layer 15 is to reflect the light emitted from the active layer 13 toward the p-GaN layer 12 and to emit it from the surface of the n-GaN layer 14, thereby improving the light extraction efficiency of the entire light emitting diode 100. In the present embodiment, the specular reflection layer 15 can be formed by vacuum evaporation, sputtering, or the like.

The electrode layer 16 is disposed on the surface of the n-GaN layer 14. The electrode layer 16 functions to bring the external power source into contact with the light emitting diode 100 to supply current to the light emitting diode 100 to emit light. In the present embodiment, the electrode layer 16 is located at the center of the n-GaN layer 14. The electrode layer 16 is made of a silver material which is formed on the surface of the n-GaN layer 14 by thermal evaporation or chemical vapor deposition.

The first diffusion portion 17 and the second diffusion portion 18 are provided on the surface of the n-GaN layer 14. The first diffusion portion 17 and the second diffusion portion 18 are arranged in a direction away from the electrode layer 16. That is, the distance between the second diffusion portion 18 and the electrode layer 16 is shorter than the distance between the first diffusion portion 17 and the electrode layer 16. The first diffusion portion 17 and the second diffusion portion 18 are doped with gaseous atoms such as B, P, and As. The doping concentration of the first diffusion portion 17 is smaller than the doping concentration of the second diffusion portion 18. That is, the resistivity of the first diffusing portion 17 is greater than the resistivity of the second diffusing portion 18. In this case, since the current tends to flow toward a place where the resistivity is small, the current flows toward the second diffusion portion 18 away from the electrode layer 16, so that the current is sufficiently distributed uniformly on the surface of the light-emitting diode 100, thereby The light extraction efficiency of the light emitting diode 100 is improved. In the present embodiment, the first diffusing portion 17 and the second diffusing portion 18 are two rings disposed around the electrode layer 16 , wherein the radius of the ring of the first diffusing portion 17 is smaller than that of the second diffusing portion 18 . The radius of the ring. In the present embodiment, the doping concentration of the first diffusion portion 17 and the second diffusion portion 18 may vary from 1 × 10 ¹⁸ cm ^-3 to 9 × 10 ¹⁸ cm ^-3 .

Referring to FIG. 2A to FIG. 2F together, in the embodiment, the first diffusion portion 17 and the second diffusion portion 18 are fabricated in the following manner.

First, the second diffusion unit 18 is fabricated. As shown in FIG. 2A, a SiO ₂ barrier layer 19 having a pattern of a second diffusion portion 18 is formed on the surface of the n-GaN layer 14, that is, the SiO ₂ barrier layer 19 covers a region other than the region where the second diffusion portion 18 is located. The SiO ₂ barrier layer 19 pattern is formed by depositing a SiO ₂ barrier layer 19 on the surface of the n-GaN layer 14 by plasma enhanced chemical vapor deposition (PECVD) or inductively coupled plasma enhanced chemistry. Vapor deposition (ICPECVD). A photosensitive layer is then applied to the surface of the SiO ₂ barrier layer 19. The photosensitive layer may be a positive photoresist or a negative photoresist, and the coating method may be a rotary method, a spray coating method, a dipping method or a drum type. A region of the second diffusion portion 18 to be diffused is defined on the photosensitive layer by exposure development. The photosensitive layer on the second diffusion portion 18 is then removed to expose the surface of the SiO ₂ barrier layer 19. The SiO ₂ barrier layer 19 not covered by the photosensitive layer is etched by inductively coupled plasma etching (ICP) to expose the surface of the n-GaN layer 14. The remaining photosensitive layer is then removed. At this time, the region not covered by the SiO ₂ barrier layer 19 is the region of the second diffusion portion 18 that needs to be diffused. As shown in FIG. 2B, the light-emitting diode 100 having the pattern of the SiO ₂ barrier layer 19 is placed in a high-temperature furnace having a gas or a vapor source such as B, P, As, etc., due to the action of temperature, B, P, As, etc. Gas atoms will diffuse into the n-GaN layer 14 to form a second diffusion 18 having a particular doping concentration. Generally, the diffusion temperature is selected to be in the range of from 500 degrees to 750 degrees. The doping concentration and depth of the second diffusion portion 18 can be determined by the gas concentration in the high temperature furnace and the diffusion time of the light emitting diode 100 in the high temperature furnace. The higher the concentration of gas atoms such as B, P, and As in the high temperature furnace, the larger the doping concentration of the second diffusion portion 18. The longer the diffusion time of the light-emitting diode 100 in the high-temperature furnace, the deeper the diffusion depth of the second diffusion portion 18 in the n-GaN layer 14, that is, the higher the thickness of the second diffusion portion 18. Therefore, the doping concentration and thickness of the second diffusion portion 18 can be determined by the concentration and diffusion time of gas atoms such as B, P, and As in the high temperature furnace. Preferably, the diffusion depth of the second diffusion portion 18 does not exceed the thickness of the n-GaN layer 14 by selecting a suitable gas atom concentration and diffusion time to prevent gas atoms such as B, P, and As from diffusing into the active layer 13. Thereby affecting the luminescent properties of the active layer 13. After the diffusion is completed, the SiO ₂ barrier layer 19 is removed as shown in Fig. 2C. The removal method can be etched using an acidic solution such as hydrochloric acid or sulfuric acid.

After the diffusion process of the second diffusion portion 18 is completed, the first diffusion portion 17 can be fabricated by the same process. 17 by first fabricating a pattern of SiO ₂ portion of the first diffusion barrier layer 110, shown in Figure 2D, SiO ₂ barrier layer 110 not covered with the first area is the need of diffusion of the diffusion portion 17. Referring to FIG. 2E, the light-emitting diode 100 having the SiO ₂ barrier layer 110 is placed in a high-temperature furnace having a gas or a vapor source such as B, P, As, etc., due to the action of temperature, B, P, As, etc. It will diffuse into the n-GaN layer 14 to form a first diffusion portion 17 having a specific doping concentration. It should be noted that in the process of fabricating the first diffusion portion 17, the doping concentration of the first diffusion portion 17 can be lowered by lowering the concentration of gas atoms such as B, P, and As in the high temperature furnace. The doping concentration of the first diffusion portion 17 is made smaller than the doping concentration of the second diffusion portion 18. After the diffusion is completed, the SiO ₂ barrier layer 110 is removed, see FIG. 2F.

After both the first diffusion portion 17 and the second diffusion portion 18 are formed, the electrode layer 16 is formed at the center of the n-GaN layer 14. The distance between the electrode layer 16 and the first diffusion portion 17 is smaller than the distance between the electrode portion 16 and the second diffusion portion 18.

It can be understood that a photosensitive layer may be deposited on the surface of the n-GaN layer, and then the photosensitive layer is exposed and developed to define a region to be diffused. A photosensitive layer formed on the diffusion region does not need to be removed, followed by deposition of SiO ₂ barrier layer, thereby forming a SiO ₂ barrier layer having a required pattern of the diffusion region.

It can be understood that in the manufacturing process of the first diffusion portion 17 and the second diffusion portion 18, it is not limited to first making the second diffusion portion 18, and then the first diffusion portion 17 is fabricated. Alternatively, the first diffusion portion 17 may be formed first, and then the second diffusion portion 18 may be formed.

It is to be understood that the diffusion portion of the embodiment is not limited to two, and may be three or more. The three or more diffusing portions are distributed in a direction away from the electrode layer, and the doping concentration thereof also gradually increases in a direction away from the electrode layer. Thereby forming a doping region whose doping concentration gradually changes from the center position of the n-GaN layer toward the edge, so that current flows from the central region of the light emitting diode toward the edge, thereby improving the uniformity of current distribution of the light emitting diode, Improve its luminous efficiency.

In addition, the first diffusion portion and the second diffusion portion are not limited to the above manufacturing method. Referring to FIG. 3, the light emitting diode 200 according to the second embodiment of the present invention.

The light-emitting diode 200 according to the second embodiment of the present invention includes a substrate 21, a p-GaN layer 22 laminated on the substrate 21, an active layer 23, an n-GaN layer 24, a specular reflection layer 25, and an electrode layer 26. At the same time, the light emitting diode 200 further includes a first diffusion portion 27 and a second diffusion portion 28. The first diffusion portion 27 and the second diffusion portion 28 are sequentially distributed in a direction away from the electrode layer 26.

In the present embodiment, the role of the substrate 21, the p-GaN layer 22, the active layer 23, the n-GaN layer 24, the specular reflection layer 25, and the electrode layer 26 in the light emitting diode 200 is the same as that of the first embodiment. the same.

Unlike the first embodiment, the first diffusion portion 27 includes a diffusion region 271 and a non-diffusion region 272. The second diffusion portion 28 also includes a diffusion region 281 and a non-diffusion region 282. In the present embodiment, the diffusion concentration of the diffusion region 271 and the diffusion region 281 are the same. However, in the first diffusion portion 27, the ratio between the widths of the diffusion regions 271 and the non-diffusion regions 272 is smaller than the ratio between the widths of the diffusion regions 281 and the non-diffusion regions 282 in the second diffusion portion 28. Therefore, the doping concentration of the first diffusion portion 27 is smaller than the doping concentration of the second diffusion portion 28 as a whole. That is, the resistivity of the second diffusing portion 28 is smaller than the resistivity of the first diffusing portion 27, so that a current flows from the electrode layer 26 toward the second diffusing portion 28 that is away from the electrode layer 26. The current is evenly distributed on the surface of the light-emitting diode 100, thereby improving the light-emitting efficiency.

By dividing the first diffusion portion 27 into the diffusion region 271 and the non-diffusion region 272 and dividing the second diffusion portion 28 into the diffusion region 281 and the non-diffusion region 282, the fabrication of the first diffusion portion 27 and the second diffusion portion 28 is performed. Completed in a diffusion process to increase efficiency. Referring to FIG. 4A to FIG. 4C, the first diffusion portion 27 and the second diffusion portion 28 of the LED 200 of the present embodiment are manufactured as follows:

Referring to FIG. 4A, a SiO ₂ barrier layer 29 having a pattern of a diffusion region 271 and a diffusion region 281 is formed on the surface of the n-GaN layer 24, that is, the SiO ₂ barrier layer 29 covers other regions than the diffusion region 271 and the diffusion region 281. The SiO ₂ barrier layer 29 pattern is formed by depositing a SiO ₂ barrier layer 29 on the surface of the n-GaN layer 24, which may be deposited by plasma enhanced chemical vapor deposition (PECVD) or inductively coupled plasma enhanced chemistry. Vapor deposition (ICPECVD). A photosensitive layer is then applied to the surface of the SiO ₂ barrier layer 29. The photosensitive layer may be a positive photoresist or a negative photoresist, and the coating method may be a rotary method, a spray coating method, a dipping method or a drum type. A diffusion region 271 and a diffusion region 281 which are required to be diffused are defined on the photosensitive layer by exposure development. The diffusion layer 271 and the photosensitive layer on the diffusion region 281 are then removed to expose the surface of the SiO ₂ barrier layer 29. The SiO ₂ barrier layer 29 not covered by the photosensitive layer is etched by inductively coupled plasma etching (ICP) to expose the surface of the n-GaN layer 24, and then the remaining photosensitive layer is removed. At this time, the region not covered by the SiO ₂ barrier layer 29 is the diffusion region 271 and the diffusion region 281 which are required to be diffused. It is to be noted that in the first diffusion portion 27, the ratio of the width between the diffusion region 271 and the non-diffusion region 272 is smaller than the ratio between the diffusion region 281 and the non-diffusion region 282 in the second diffusion portion 28. Referring to FIG. 4B, the light-emitting diode 200 having the pattern of the SiO ₂ barrier layer 29 is placed in a high-temperature furnace having a gas or a vapor source such as B, P, As, etc., due to the effect of temperature, B, P, Gas atoms such as As will diffuse into the n-GaN layer 24, thereby doping atoms such as B, P, and As in the diffusion region 271 and the diffusion region 281. Also, the diffusion temperature is selected to be in the range of 500 to 750 degrees. The doping concentration and depth of the diffusion region 271 and the diffusion region 281 can be determined by the gas concentration in the high temperature furnace and the diffusion time of the light emitting diode 200 in the high temperature furnace. The higher the concentration of gas atoms such as B, P, and As in the high temperature furnace, the larger the doping concentration of the diffusion region 271 and the diffusion region 281. The longer the diffusion time of the light-emitting diode 200 in the high-temperature furnace, the deeper the diffusion depth of gas atoms such as B, P, and As in the n-GaN layer 24, that is, the greater the thickness of the diffusion region 271 and the diffusion region 281. In general, the diffusion depth of the diffusion region 271 and the diffusion region 281 of the gas atoms such as B, P, and As does not exceed the thickness of the n-GaN layer 24, so as to prevent gas atoms such as B, P, and As from diffusing into the active layer 23, Thereby, the luminescent properties of the active layer 23 are affected. After the diffusion process is completed, the SiO ₂ barrier layer 29 is removed, as shown in Fig. 4C.

It can be understood that the present invention can also have other embodiments. Referring to FIG. 5, the LED 201 of the third embodiment of the present invention.

The light-emitting diode 300 according to the second embodiment of the present invention includes a substrate 31 and a p-GaN layer 32, an active layer 33, an n-GaN layer 34, a specular reflection layer 35, and an electrode layer 36 which are sequentially laminated on the substrate 31. At the same time, the LED 300 further includes a first diffusion portion 37 and a second diffusion portion 38.

The substrate 31, the p-GaN layer 32, the active layer 33, the n-GaN layer 34, and the specular reflection layer 35 in this embodiment are the same as those in the first embodiment.

Referring to FIG. 6, together with the first embodiment, the electrode layer 36 of the present embodiment is a mesh electrode, and the mesh electrode layer 36 divides the surface of the n-GaN layer 34 into a plurality of square regions. The second diffusion portion 38 is provided inside the square region divided by the electrode layer 36, and the first diffusion portion 37 is provided between the electrode layer 36 and the second diffusion portion 38. The doping concentration of the first diffusion portion 37 is smaller than the doping concentration of the second diffusion portion 38. In the present embodiment, the diffusion process is not performed on the first diffusion portion 37 and only the diffusion process is performed on the second diffusion portion 38. Similarly, the doping concentration of the first diffusion portion 37 is smaller than the doping concentration of the second diffusion portion 38.

The manufacturing process of the second diffusion portion 38 can be referred to the first embodiment and the second embodiment. I.e. SiO ₂ barrier layer by using the area other than the second portion 38 of the diffusion cover. Then, the light-emitting diode 300 having the SiO ₂ barrier layer is placed in a high-temperature furnace through which a gas such as B, P, As or the like or a vapor source is diffused to form a second diffusion portion 38 having a specific doping concentration.

In the application process, since the doping concentration of the second diffusion portion 38 is higher than the doping concentration of the first diffusion portion 37, the current will flow from the electrode layer 36 to the second diffusion portion 38 at the center of the square region enclosed therein. Flows up to make the current distribution uniform.

Also, in the present embodiment, the diffusion portion is not limited to two, and it may be three or more, and the doping concentration thereof also gradually increases in a direction away from the electrode layer. This needs to be determined based on the actual application.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100, 200, 300‧‧‧Lighting diodes

11, 21, 31‧‧‧ substrates

12, 22, 32‧‧‧p-GaN layer

13, 23, 33‧‧‧ active layer

14, 24, ‧ ‧ n-GaN layer

15, 25, 35‧‧ ‧ specular reflection layer

16, 26, 36‧‧‧ electrode layer

17, 27, 37‧‧ First diffusion department

18, 28, 38‧‧‧ Second Diffusion Department

19, 29, 110‧‧‧ SiO ₂ barrier

271, 281‧‧‧Diffusion area

272, 282‧‧‧ Non-diffusion areas

1 is a schematic structural view of a light emitting diode according to a first embodiment of the present invention.

2A-2F show the manufacturing process of the first diffusion portion and the second diffusion portion in the first embodiment.

3 is a schematic structural view of a light emitting diode according to a second embodiment of the present invention.

4A-4C show the fabrication process of the first diffusion portion and the second diffusion portion in the second embodiment.

FIG. 5 is a schematic structural view of a light emitting diode according to a third embodiment of the present invention.

FIG. 6 is a schematic view showing the surface of the n-GaN layer of the light-emitting diode of FIG. 5. FIG.

100‧‧‧Lighting diode

11‧‧‧Substrate

12‧‧‧p-GaN layer

13‧‧‧Active layer

14‧‧‧n-GaN layer

15‧‧‧Mirror reflection layer

16‧‧‧electrode layer

17‧‧‧First Diffusion Department

18‧‧‧Second Diffusion Department

Claims (10)

A light emitting diode comprising a substrate and a P-GaN layer, an active layer and an n-GaN layer formed sequentially on the substrate, the light emitting diode further comprising an electrode layer, wherein the electrode layer is provided with an n-GaN layer a surface, wherein the n-GaN layer includes a first diffusion portion and a second diffusion portion, the first diffusion portion is adjacent to the electrode layer, and the second diffusion portion is disposed on the first diffusion portion away from the electrode layer a side, and a doping concentration of the first diffusion portion is smaller than a doping concentration of the second diffusion portion. The light-emitting diode of claim 1, wherein the electrode layer is disposed at a center of the n-GaN layer and located on the first diffusion portion, and the second diffusion portion is disposed around the first diffusion portion. . The light-emitting diode according to the first aspect of the invention, wherein the first diffusion portion and the second diffusion portion respectively comprise a diffusion region and a non-diffusion region arranged at intervals, and the doping concentration of the diffusion region is the same, first The ratio between the width of the diffusion region and the width of the non-diffusion region in the diffusion portion is smaller than the ratio between the diffusion region and the width of the non-diffusion region in the second diffusion portion. The light-emitting diode according to claim 1, wherein the electrode layer is a mesh electrode, the mesh electrode divides the n-GaN layer into a plurality of regions, and the second diffusion portion is disposed in each region The central portion has a first diffusion portion disposed between the electrode layer and the second diffusion portion. The light-emitting diode according to any one of claims 1 to 4, wherein the diffusion depth of the first diffusion portion and the second diffusion portion is smaller than the thickness of the n-GaN layer. The light-emitting diode according to any one of claims 1 to 4, wherein the doping ions of the first diffusion portion and the second diffusion portion comprise three elements of B, P, and As. One or several of them. The light-emitting diode according to any one of claims 1 to 4, wherein the light-emitting diode further comprises a specular reflection layer disposed on the P-GaN layer Between the substrate and the substrate. A method for fabricating a light emitting diode, comprising the steps of:
Providing a substrate;
Forming a P-GaN layer, an active layer, and an n-GaN layer sequentially on the substrate;
Forming a first diffusion portion and a second diffusion portion on the surface of the n-GaN layer, wherein the doping concentration of the first diffusion portion is smaller than the doping concentration of the second diffusion portion during the manufacturing process;
An electrode layer is formed on the surface of the n-GaN layer. The manufacturing method of the light-emitting diode according to the eighth aspect of the invention, wherein the manufacturing process of the first diffusion portion and the second diffusion portion comprises the following steps:
First make the second diffusion:
a. depositing a SiO ₂ barrier layer on the surface of the n-GaN layer;
b. coating a surface of the SiO ₂ barrier layer with a photosensitive layer, exposing and developing the photosensitive layer, and removing the photosensitive layer of the second diffusion portion;
c. etching a region of the SiO ₂ barrier layer not covered by the photosensitive layer to expose the surface of the n-GaN layer, and then removing the photosensitive layer to form a pattern of the second diffusion portion in the SiO ₂ barrier layer;
d. The light-emitting diode formed with the SiO ₂ barrier layer pattern is placed in a high-temperature furnace containing a gas or a vapor source of one or any of B, P, As, and the atom is thermally diffused. Diffusion into the second diffusion portion;
e. removing the SiO ₂ barrier layer;
Then, the first diffusion portion is formed on the light-emitting diode on which the second diffusion portion is formed:
f. depositing a SiO ₂ barrier layer on the surface of the n-GaN layer;
g. coating a photosensitive layer on the surface of the SiO ₂ barrier layer, exposing and developing the photosensitive layer, and removing the photosensitive layer in the first diffusion portion;
h. etching a region of the SiO ₂ barrier layer not covered by the photosensitive layer to expose the surface of the n-GaN layer, and then removing the photosensitive layer, thereby forming a pattern of the first diffusion portion in the SiO ₂ barrier layer;
i. placing the light-emitting diode formed with the SiO ₂ barrier layer pattern into a high-temperature furnace containing a gas or a vapor source of one or any of B, P, As, and the above atom by thermal diffusion Diffusion into the first diffusion portion;
j. Remove the SiO ₂ barrier layer. The manufacturing method of the light-emitting diode according to the eighth aspect of the invention, wherein the manufacturing process of the first diffusion portion and the second diffusion portion comprises the following steps:
a. depositing a SiO ₂ barrier layer on the surface of the n-GaN layer;
b. coating a surface of the SiO ₂ barrier layer with a photosensitive layer, exposing and developing the photosensitive layer to define a position of the first diffusion portion and the second diffusion portion, wherein the first diffusion portion and the second diffusion portion respectively comprise diffusion In the region and the non-diffusion region, a ratio between a diffusion region and a non-diffusion region width in the first diffusion portion is smaller than a ratio between a diffusion region and a non-diffusion region width in the second diffusion portion, and then the diffusion region is exposed. Layer removal
c. etching a region of the SiO ₂ barrier layer not covered by the photosensitive layer to expose the surface of the n-GaN layer, and then removing the photosensitive layer to form a pattern of the diffusion region in the SiO ₂ barrier layer;
d. placing a light-emitting diode having a SiO ₂ barrier layer pattern in a high-temperature furnace containing a gas or a vapor source of one or any of B, P, As, and diffusing the atom by thermal diffusion In the diffusion zone;
e. Remove the SiO ₂ barrier layer.