JP2006019666A - Light emitting unit and light emitting device - Google Patents

Light emitting unit and light emitting device Download PDF

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Publication number
JP2006019666A
JP2006019666A JP2004198512A JP2004198512A JP2006019666A JP 2006019666 A JP2006019666 A JP 2006019666A JP 2004198512 A JP2004198512 A JP 2004198512A JP 2004198512 A JP2004198512 A JP 2004198512A JP 2006019666 A JP2006019666 A JP 2006019666A
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Prior art keywords
light emitting
anode
light
cathode
emitting device
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Withdrawn
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JP2004198512A
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Japanese (ja)
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Shuzo Ito
修三 伊藤
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Phenitec Semiconductor Corp
フェニテックセミコンダクター株式会社
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Priority to JP2004198512A priority Critical patent/JP2006019666A/en
Publication of JP2006019666A publication Critical patent/JP2006019666A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting unit and a light emitting device in which luminance of light traveling in the opening direction of a recess can be enhanced while enhancing heat dissipation of a light emitting element by forming the recess having inner surface of mirror finish in a mount member and mounting the light emitting element in the recess. <P>SOLUTION: In the light emitting unit mounting a light emitting element 10 on a submount material 30, a recess 30a having inner surface of mirror finish is formed in the submount member 30 and the light emitting element 10 is mounted in the recess 30a. The light emitting element 10 has an anode and a cathode, the submount member 30 is a P type semiconductor substrate, N type semiconductor regions 32 and 32 are formed at a part on the bottom of the recess 30a, and anode connecting parts 20 and 20 connected with the anode and cathode are provided on the N type semiconductor regions 32 and 32. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a light emitter in which a light emitting element is mounted on a mount member, and a light emitting device including the light emitter.

  Some lighting devices use LEDs that have lower power consumption and longer life than light bulbs. FIG. 15 is a cross-sectional view illustrating an example of a light emitting device using LEDs. A light emitting device in which an LED chip (light emitting element) 10 is mounted on a submount material (mounting member) 3 is placed on a plate-like die pad 44 provided near the tip of a copper rod-shaped first lead 40. Die bonding is performed using 46. However, the submount material 3 and the first lead 40 are insulated.

  The tip of the first lead 40 is connected to a bonding pad (not shown) of the submount material 3 by a wire 48. Further, the tip of the copper rod-like second lead 42 is connected to a bonding pad (not shown) of the submount material 3 by a wire 48. The light emitter and the distal ends of the first lead 40 and the second lead 42 are inserted into a synthetic resin cover 49 having translucency. The cover 49 also functions as a condensing lens that condenses the light emitted from the LED chip 10.

  16 is an enlarged cross-sectional view of the light emitter shown in FIG. In the LED chip 10, a GaN-based LED layer 14 is formed on a rectangular transparent sapphire substrate 12 (downward in the figure). A cathode electrode and an anode electrode (not shown) are formed on the LED layer 14 (downward in the figure), and the LED chip 10 is mounted on the rectangular plate-shaped submount material 3 with the LED layer 14 on the lower side. Has been.

Two N-type diffusion layers 32 and 32 are formed on the front surface of the submount 3. Aluminum electrodes 20 and 20 are formed on the N-type diffusion layers 32 and 32. In addition, oxide films (SiO 2 ) 26 and 26 are formed around the N-type diffusion layers 32 and 32, and the aluminum electrodes 20 and 20 are formed on the oxide films 26 and 26. Bonding pads 24 and 24 to which the wires 48 described above are connected are formed on the aluminum electrodes 20 and 20.

  The cathode and anode electrodes of the LED chip 10 are connected to the aluminum electrodes 20 and 20 of the submount material 3 by conductive balls 22 and 22. Further, a metal layer 34 for die bonding such as an Al—Ti—Ag layer or an Al—Ti—Au layer is formed on the back surface of the submount material 3.

Further, a semiconductor element having an insulating separation layer penetrating from the front surface to the back surface has been proposed so that the first lead 40 and the second lead 42 can be connected to the back surface of the light emitter without using the wire 48 (for example, , See Patent Document 1). In the light emitting device, light irradiated downward from the LED layer 14 of the LED chip 10 is reflected by the aluminum electrodes 20, 20, passes through the transparent sapphire substrate 12, and travels upward.
JP 2003-229581 A

  The brightness of current LEDs is not sufficient to be used for general illumination, and an improvement in brightness is desired. However, as shown in FIG. 16, the light irradiated in the horizontal direction from the LED chip 10 is not used effectively, such as coming out from the horizontal direction, being irregularly reflected, or absorbed by the submount material 3. There is a problem. Further, since the LED chip 10 generates heat due to light emission, improvement in heat dissipation is desired.

  The present invention has been made in view of such circumstances, and the brightness of light traveling in the opening direction of the concave portion is obtained by forming a concave portion having a mirror surface on the mount member and mounting a light emitting element on the concave portion. It is an object to provide a light-emitting device and a light-emitting device that can improve the heat dissipation and improve the heat dissipation of the light-emitting element.

  According to the present invention, an N-type semiconductor region is formed in a part of the bottom of the recess formed in the P-type semiconductor mount member, and an anode connection portion connected to the anode of the light emitting element is provided on the N-type semiconductor region. It is another object of the present invention to provide a light emitting device and a light emitting device capable of preventing static electricity from being applied to the light emitting element from the reverse direction by providing a cathode connection portion connected to the cathode of the light emitting element on the P-type semiconductor region of the recess. Objective.

  Further, according to the present invention, an N-type semiconductor region is formed in two places at the bottom of the recess formed in the P-type semiconductor substrate, and an anode connection portion connected to the anode of the light emitting element is provided on one N-type semiconductor region. Providing a light-emitting device and a light-emitting device capable of preventing static electricity from being applied to the light-emitting element from the forward and reverse directions by providing a cathode connection portion connected to the cathode of the light-emitting element on the other N-type semiconductor region. For other purposes.

  The present invention also provides a through conductive layer penetrating from the concave surface (front surface) where the concave portion of the mount member is formed to the back surface, and connecting the through conductive layer on the concave surface to the anode connection portion or the cathode connection portion. And a light-emitting device and a light-emitting device in which a positive electrode lead or a negative electrode lead can be directly connected to the anode plate or the cathode plate without using a wire by using a structure in which the anode plate or the cathode plate is connected to the through conductive layer on the back surface. The other purpose is to provide.

  Further, the present invention provides two through conductive layers penetrating from the recessed portion forming surface to the back surface of the mount member, one of the two through conductive layers of the recessed portion forming surface is connected to the anode connecting portion, and the other is connected to the cathode connecting portion. By connecting the anode plate to one through conductive layer on the back surface and connecting the cathode plate to the other through conductive layer, the positive electrode lead and the negative electrode are connected to the anode plate and the cathode plate, respectively, without using wires. Another object of the present invention is to provide a light-emitting device and a light-emitting device in which leads can be directly connected.

  A light emitting device according to a first aspect of the present invention is a light emitting device in which a light emitting element is mounted on a mount member, wherein the mount member is formed with a recess having a mirror inner surface, and the light emitting element is mounted in the recess. .

  A light emitting device according to a second invention is the light emitting device according to the first invention, wherein the light emitting element has an anode and a cathode, the mount member is a P type semiconductor substrate, and an N type semiconductor region is formed in a part of the bottom of the recess. An anode connection portion connected to the anode on the N-type semiconductor region, and a cathode connection portion connected to the cathode on the P-type semiconductor region where the N-type semiconductor region is not formed. Features.

  A light emitting device according to a third invention is the light emitting device according to the first invention, wherein the light emitting element has an anode and a cathode, the mount member is a P type semiconductor substrate, and N type semiconductor regions are formed at two locations at the bottom of the recess. And having an anode connection portion connected to the anode on one N-type semiconductor region and having a cathode connection portion connected to the cathode on the other N-type semiconductor region.

  The light emitting device according to a fourth invention is the penetrating conductive layer penetrating between the concave portion forming surface where the concave portion of the mount member is formed and the back surface opposite to the concave portion forming surface in the second or third invention, It is characterized by comprising a conductor for connecting an anode connecting portion or a cathode connecting portion to the through conductive layer on the concave surface and an anode plate or a cathode plate connected to the through conductive layer on the back surface.

  The light emitting device according to the fifth invention is the light-emitting device according to the second or third invention, wherein in the second or third invention, there are two through-conductive layers penetrating between the concave portion forming surface where the concave portion of the mount member is formed and the back surface opposite to the concave portion forming surface. Two conductors for connecting an anode connecting portion to one of the two through conductive layers on the concave surface and the cathode connecting portion to the other, and an anode plate connected to one through conductive layer on the back surface, And a cathode plate connected to the other through conductive layer.

  A light emitting device according to a sixth aspect of the present invention includes the light emitter according to any one of the first to fifth aspects, a positive electrode lead and a negative electrode lead connected to the light emitter, a part of the positive electrode lead and the negative electrode lead, and the light emitter. And a translucent cover to be inserted.

  A light emitting device according to a seventh aspect of the present invention is the light emitting device of the second or third aspect, a positive electrode lead and a negative electrode lead, a conductor that connects the positive electrode lead to the anode connection portion of the light emitting device, and a negative electrode lead that is connected to the light emitting device. It is characterized by comprising a conductor connected to the cathode connection portion, and a translucent cover into which a positive electrode lead, a part of the negative electrode lead, and a light emitter are inserted.

  A light-emitting device according to an eighth aspect of the present invention includes the light-emitting device according to the fourth aspect, a positive electrode lead connected to the anode plate of the light-emitting device, a negative electrode lead connected to the cathode plate, and part of the positive electrode lead and the negative electrode lead. And a translucent cover into which the light emitter is inserted.

  In the first and sixth inventions, the light emitting element is mounted in the concave portion whose inner surface is a mirror surface, and the light irradiated in the lateral direction from the light emitting element is reflected by the inner surface (mirror surface) of the concave portion and proceeds in the opening direction. Most of the light emitted from the light emitting element proceeds in the opening direction of the recess, but the light irradiated in the lateral direction also proceeds in the opening direction, so that the luminance of the light traveling in the opening direction is improved. In addition, since the light emitting element is mounted in the recess, the light emitting element is embedded in the mount member, and the thickness of the entire light emitter is reduced and the thickness is reduced. Furthermore, since the light emitting element is mounted in the recess, the thickness from the light emitting element to the back surface of the mount member is reduced, and heat generated from the light emitting element is easily transmitted to the back surface of the mount member, thereby improving heat dissipation.

  In the second and seventh inventions, the mount member is a P-type semiconductor substrate, and an N-type semiconductor region is formed in a part of the bottom of the recess. A cathode connecting portion connected to the cathode of the light emitting element is formed on the P type semiconductor region having an anode connecting portion connected to the anode of the light emitting element on the N type semiconductor region, and the N type semiconductor region of the recess is not formed. Therefore, the light emitting element and the diode are connected in parallel in the opposite direction between the anode connection portion and the cathode connection portion. The diode can prevent static electricity from being applied to the light emitting element from the opposite direction.

  In the third and seventh inventions, the mount member is a P-type semiconductor substrate, and N-type semiconductor regions are formed at two locations on the bottom of the recess. The anode connection portion connected to the anode of the light emitting element is provided on one N-type semiconductor region, and the anode connection portion connected to the cathode of the light emitting element is provided on the other N-type semiconductor region. Between the connection part and the cathode connection part, the light emitting element and two diodes connected in series with the cathode are connected in parallel. The two diodes can prevent static electricity from being applied to the light emitting element from the forward direction and the reverse direction.

  In the fourth and eighth inventions, the mount member is formed with a through conductive layer penetrating from the recess forming surface (front surface) where the recess is formed to the back surface. Since the through conductive layer on the recess forming surface is connected to the anode connecting portion or the cathode connecting portion with a conductor, and the anode plate or the cathode plate is connected to the through conductive layer on the back surface, the anode connecting portion or the cathode connecting portion is It is connected to the anode plate or cathode plate on the back surface through the body and the through conductive layer. When connecting the light emitter to the positive electrode lead and the negative electrode lead, the positive electrode lead or the negative electrode lead can be directly connected to the anode plate or the cathode plate on the back surface of the mount member without using a wire. When a wire is not used, manufacturing is facilitated and manufacturing cost is reduced. In addition, since a wire arrangement space is not required, it is possible to reduce the thickness and thickness.

  In the fifth and eighth aspects, the mount member is formed with two through conductive layers penetrating from the recess forming surface (front surface) where the recess is formed to the back surface. One of the two through conductive layers on the recess forming surface is connected to the anode connecting portion with a conductor, the other is connected to the cathode connecting portion with a conductor, the anode plate is connected to one through conductive layer on the back surface, and the other Since the cathode plate is connected to the through conductive layer, the anode connecting portion and the cathode connecting portion are connected to the anode plate and the cathode plate on the back surface through the conductor and the through conductive layer, respectively. When the light emitter is connected to the positive electrode lead and the negative electrode lead, the positive electrode lead and the negative electrode lead can be directly connected to the anode plate and the cathode plate on the back surface of the mount member, respectively, without using wires. When a wire is not used, manufacturing is facilitated and manufacturing cost is reduced. In addition, since a wire arrangement space is not required, it is possible to reduce the thickness and thickness.

  According to the first and sixth inventions, the luminance of light traveling in the opening direction can be improved. Further, the heat dissipation of the light emitting element can be improved, and the current flowing through the light emitting element can be increased.

  According to the second, third, and seventh inventions, it is possible to prevent static electricity from being applied to the light emitting element.

  According to the fourth, fifth, and eighth inventions, the positive electrode lead can be directly connected to the anode plate on the back surface of the mount member without using a wire, and the negative electrode lead can be directly connected to the cathode plate. Since no wire is used, the manufacturing cost can be reduced, and the thickness can be reduced.

Hereinafter, the present invention will be specifically described with reference to the drawings illustrating embodiments thereof.
(First embodiment)
FIG. 1 is a cross-sectional view showing an example of a light emitting device according to the present invention. A light emitting device in which an LED chip (light emitting element) 10 is mounted on a submount material (mounting member) 30 on a plate-like die pad 44 provided near the tip of the copper rod-shaped first lead 40 is an Ag paste. Die bonding is performed using 46. However, the submount material 30 and the first lead 40 are insulated.

  The tip of the first lead 40 is connected to a bonding pad (not shown) of the submount material 30 by a wire (conductor) 48. The tip of the copper rod-like second lead 42 is connected to a bonding pad (not shown) of the submount 30 by a wire 48. One of the first lead 40 and the second lead 42 (positive lead) is connected to a positive electrode of a power source (not shown), and the other (negative lead) is connected to a negative electrode. The light emitter and the distal ends of the first lead 40 and the second lead 42 are inserted into a synthetic resin cover 49 having translucency. The LED chip 10 is, for example, a blue diode chip, and can output blue light from the light emitting device, or can output white light from the light emitting device using, for example, a yellow filter.

  2 is a top view showing an example of the light emitting device shown in FIG. 1, and FIG. 3A is a cross-sectional view taken along line AA in FIG. In the LED chip 10, a GaN-based LED layer 14 is formed on a rectangular transparent sapphire substrate 12 (downward in the drawing). An anode electrode (anode) and a cathode electrode (cathode) (not shown) are formed on the LED layer 14 (downward in the drawing). The LED chip 10 has the LED layer 14 on the lower side and the submount material 30 It is mounted in a recess 30a which will be described later.

  The LED layer 14 includes, for example, a GaN buffer layer formed on the sapphire substrate 12, a cathode electrode formed on a part of the GaN buffer layer, an N-GaN layer formed on the other part, and an N-AlGaN layer on the N-GaN layer. (Clad layer) is formed, an InGaN layer (active layer) is formed on the N-AlGaN layer, a P-AlGaN layer (clad layer) is formed on the InGaN layer, and a P-type GaN layer is formed on the P-AlGaN layer And an anode electrode is formed on the P-type GaN layer.

  The submount material 30 is a rectangular P-type silicon substrate, and an elliptical concave portion 30a is formed on the front surface (recessed surface). The recess 30a is formed by etching. When the submount material 30 is etched, it becomes isotropic etching, and the cross section of the recess 30a is curved from the bottom outer peripheral portion to the front surface of the submount material 30 as shown in FIG. For example, the curvature radius is a curve of 100 to 150 μm. The curved portion is a mirror surface of silicon.

Two N-type diffusion layers (N-type semiconductor layers) 32 and 32 are formed on the bottom of the recess 30 a of the submount material 30. Aluminum electrodes 20 and 20 are formed on the N-type diffusion layers 32 and 32. In addition, oxide films (SiO 2 ) 28 and 28 are formed on the periphery of the N-type diffusion layers 32 and 32 at the bottom of the recess 30 a, and aluminum electrodes 20 and 20 are formed on the oxide films 28 and 28. Bonding pads 24 and 24 to which the wires 48 described above are connected are formed on the aluminum electrodes 20 and 20. One of the aluminum electrodes 20, 20 (anode connection portion) is connected to the anode electrode, and the other (cathode connection portion) is connected to the cathode electrode.

  The cathode and anode electrodes of the LED chip 10 are connected to the aluminum electrodes 20 and 20 of the submount material 30 by conductive balls 22 and 22. Further, a metal layer 34 for die bonding such as an Al—Ti—Ag layer or an Al—Ti—Au layer is formed on the back surface of the submount material 30.

  FIG. 3B is an equivalent circuit diagram of the light emitter shown in FIG. By providing the two N-type diffusion layers 32 and 32 in the submount material 30 that is a P-type semiconductor, it is considered that the LED element 10 and two Zener diodes having cathodes connected in series are connected in parallel. be able to. The action of the two Zener diodes can prevent static electricity from being applied to the LED element 10 from the forward direction and the reverse direction.

  FIGS. 4A to 4D and FIGS. 5A to 5C are cross-sectional views of relevant parts showing an example of a method for manufacturing the submount material 30. FIGS. As shown in FIG. 4 (a), oxide films 26 and 26 are formed on the front and back surfaces of a P-type silicon substrate (submount material 30), and then a recess 30a is formed by etching as shown in FIG. 4 (b). Form. Thereafter, it can be manufactured in the same manner as in the prior art. For example, an oxide film 28 is formed on the bottom of the recess 30a as shown in FIG. 4C, and then oxidized as shown in FIG. 4D. A part of the film 28 is removed to form an N-type diffusion layer 32 as shown in FIG. 5A, and the oxide film 26 on the back surface is removed. Next, as shown in FIG. 5B, the aluminum electrode 20 is formed on the N-type diffusion layer 32 and the oxide film 28, and the metal layer 34 is formed on the back surface. Next, as shown in FIG. A bonding pad 24 is formed on the aluminum electrode 20.

  The height of the submount material 30 is 120 to 160 μm, and the thickness from the bottom of the recess 30 a to the back surface of the submount material 30 is 50 to 80 μm. The thickness from the mounting portion of the LED chip 10 to the back surface of the submount material 30 is about ½ of the conventional thickness. Moreover, since the LED chip 10 is mounted in the recess 30a, the entire light emitting device is almost the same height as that of the submount material 30 and becomes a conventional thin package of about 2/3.

  As shown in FIG. 3A, the light irradiated downward from the LED layer 14 of the LED chip 10 is reflected by the aluminum electrodes 20 and 20, passes through the transparent sapphire substrate 12, and opens in the opening direction of the recess 30 a. move on. Moreover, since the light irradiated in the horizontal direction from the LED layer 14 is reflected by the recess 30a and proceeds in the opening direction, the luminance of the light output from the light emitting device is improved. For example, when the concave portion 30a is not formed at a wavelength of 418 nm, the lamp efficiency of light output from the light emitting device is 27 [lm / w], and when the concave portion 30a is formed, the lamp efficiency is 40 [lm / w]. The lamp efficiency is improved by a factor of 1.5. FIG. 6 is a characteristic diagram showing an example of the external quantum efficiency of light traveling upward of the LED chip 10 with respect to light generated from the LED chip 10. As shown in FIG. 6, the product of the present invention in which the recess 30a is formed has an external quantum efficiency improved by about 1.6 to 1.8 times compared to the conventional product in which the recess 30a is not formed.

  The heat generated in the LED chip 10 is dissipated to the first lead 40 through the die pad 44, but the LED chip 10 is mounted in the recess 30a formed in the submount material 30 as shown in FIG. Therefore, the heat generated in the LED chip 10 is more easily transmitted from the submount material 30 to the die pad 44 than in the prior art, and heat dissipation is improved. For example, the thermal resistance when the concave portion 30a is not formed is 125 ° C./W, the thermal resistance when the concave portion 30a is formed is 80 ° C./W, and the thermal resistance is reduced by 35%. Since heat dissipation improves, it becomes possible to flow a larger electric current through the LED chip 10 than before, and luminance can be improved.

(Second Embodiment)
FIG. 7 is a top view showing another example of the light emitting device in which the LED chip 10 is mounted on the submount material 30, and FIG. 8 is a cross-sectional view taken along the line BB of FIG. In the example of FIGS. 2 and 3A, the bonding pads 24, 24 are formed on the aluminum electrodes 20, 20, but in FIGS. 7 and 8, the bonding pads 24, 24 are the aluminum electrodes 20, 20 respectively. Are formed on the oxide films 28 and 28 on the outer periphery of the aluminum electrodes 20 and 20.

(Third embodiment)
FIG. 9A is a cross-sectional view showing still another example of the light emitting device in which the LED chip 10 is mounted on the submount material 30. In the example of FIG. 3A, the N-type diffusion layer 32 is formed in two places, but in FIG. 9A, the N-type diffusion layer 32 is formed only on the anode side of the two places. Yes. FIG. 9B is an equivalent circuit diagram of the light emitter shown in FIG. By providing the N-type diffusion layer 32 on the anode side of the submount material 30, it can be considered that the LED and the Zener diode are connected in parallel in the opposite direction. By the action of the Zener diode, it is possible to prevent static electricity from being applied to the LED element 10 from the reverse direction.

(Fourth embodiment)
FIG. 10A is a cross-sectional view showing still another example of the light emitting device in which the LED chip 10 is mounted on the submount material 30. In the example of FIG. 3A, the N-type diffusion layer 32 is formed in two places, but in FIG. 10A, the N-type diffusion layer 32 is not formed. As shown in FIG. 10A, oxide films 28 and 28 are formed at two locations on the bottom of the recess 30 of the submount material 30, and aluminum electrodes 20 and 20 are formed on the oxide films 28 and 28, Bonding pads 24 and 24 are formed on the aluminum electrodes 20 and 20. FIG. 10B is an equivalent circuit diagram of the light emitter shown in FIG. Since the N-type diffusion layer 32 is not provided in the submount material 30, it can be considered that the LED is connected between the wires 28.

(Fifth embodiment)
FIG. 11 is a cross-sectional view showing still another example of the light emitting device in which the LED chip 10 is mounted on the submount material 30. In the example of FIG. 11, the submount material 30 that is substantially the same as that of FIG. 3A is insulated from the P-type semiconductor region penetrating from the front surface (recessed surface) to the back surface of the submount material 30. N-type insulating diffusion layers (penetrating conductive layers) 50, 50 made of Ti-Al are formed, and wires (conductors) 58, 58 are N-type insulating diffusions on the N-type insulating diffusion layers 50, 50 on the front surface. Connection windows 56 and 56 for connecting to the layers 50 and 50 are formed. The other ends of the wires 58 and 58 are connected to the bonding pads 24 and 24. Further, back electrodes (anode plate, cathode plate) 52, 52 made of, for example, Ti—Au are connected to the N-type insulating diffusion layers 50, 50 on the back surface of the submount material 30. An oxide film 54 is formed between the P-type semiconductor region portion on the back surface of the submount material 30 and the back surface electrodes 52 and 52. The bonding pads 24, 24 are connected to the back electrodes 52, 52 via wires 58 and N-type insulating diffusion layers 50, 50.

  12 (a) to 12 (d) and FIGS. 13 (a) to 13 (d) are cross-sectional views of relevant parts showing an example of a method for manufacturing the submount material 30 of the light emitting device shown in FIG. As shown in FIG. 12A, oxide films 26 and 54 are formed on the front and back surfaces of a P-type silicon substrate (submount material 30), and then an N-type insulating diffusion layer is formed as shown in FIG. 50 and a connection window 56 is formed on the N-type insulating diffusion layer 50. The N-type insulating diffusion layer 50 and the connection window 56 can be formed by a method similar to the conventional method. Next, as shown in FIG. 12C, a recess 30a is formed by etching. Thereafter, it can be manufactured in the same manner as in the prior art. For example, an oxide film 28 is formed on the bottom of the recess 30a as shown in FIG. 12 (d), and then oxidized as shown in FIG. 13 (a). A part of the film 28 is removed to form an N-type diffusion layer 32 as shown in FIG. 13B, and the oxide film 54 in the N-type insulating diffusion layer 50 on the back surface is removed. Next, as shown in FIG. 13C, an aluminum electrode 20 is formed on the N-type diffusion layer 32 and the oxide film 28, and a back electrode 52 is formed on the back surface. Next, as shown in FIG. A bonding pad 24 is formed on the aluminum electrode 20.

  14 is a cross-sectional view illustrating an example of a light-emitting device using the light-emitting device illustrated in FIG. The light emitting device shown in FIG. 11 is die-bonded using Ag paste 46 on plate-like die pads 64 and 64 provided near the tips of copper rod-like leads 60 and 62. Since the back electrodes 52 and 52 of the submount material 30 of the light emitter are connected to the die pads 64 and 64 via the Ag paste 46, the leads (positive electrode lead and negative electrode lead) 60 and 62 and the bonding pads of the submount material 30 are connected. There is no need to connect the wires 24 and 24 with wires. Since there is no need to connect with wires, an assembling process relating to wire connection is not required, the assembling cost is reduced, and a space for arranging wires is not required.

  In the example of FIGS. 11 and 14, two N-type insulating diffusion layers 50 are formed, but it is also possible to form only one. When only one is formed, there is only one back electrode 52, one of the positive electrode lead or the negative electrode lead is connected to the back electrode, and the other is not connected to the back electrode of the submount 30 using a wire. To the other bonding pad. It is also possible to form one or two N-type insulating diffusion layers on the submount material 30 of the light emitting device shown in FIGS. 8, 9A, and 10A.

It is sectional drawing which shows the example of the light-emitting device which concerns on this invention. It is a top view which shows the example of the light-emitting device shown in FIG. (A) is the sectional view on the AA line of FIG. 2, (b) is an equivalent circuit schematic of the light-emitting device shown to (a). It is principal part sectional drawing which shows the example of the manufacturing method of a submount material. It is principal part sectional drawing which shows the example of the manufacturing method of a submount material. It is a characteristic view which shows the example of external quantum efficiency. It is a top view which shows the other example of a light-emitting device. FIG. 8 is a sectional view taken along line BB in FIG. 7. (A) is sectional drawing which shows the further another example of a light-emitting device, (b) is an equivalent circuit schematic of the light-emitting device shown to (a). (A) is sectional drawing which shows the further another example of a light-emitting device, (b) is an equivalent circuit schematic of the light-emitting device shown to (a). It is sectional drawing which shows the further another example of a light-emitting device. It is principal part sectional drawing which shows the example of the manufacturing method of the submount material of the light-emitting device shown in FIG. It is principal part sectional drawing which shows the example of the manufacturing method of the submount material of the light-emitting device shown in FIG. It is sectional drawing which shows the example of the light-emitting device using the light-emitting device shown in FIG. It is sectional drawing which shows the example of the light-emitting device using conventional LED. It is an expanded sectional view of the conventional light-emitting device shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 LED chip 12 Sapphire substrate 14 LED layer 20 Aluminum electrode 22 Ball 24 Bonding pad 26, 28, 54 Oxide film 30 Submount material 30a Recess 32 N type diffused layer 34 Metal layer 40 First lead 42 Second lead 44 Die pad 46 Ag Paste 48, 58 Wire 49 Cover 50 N-type insulating diffusion layer 52 Back electrode 56 Connection window

Claims (8)

  1. In the light emitter in which the light emitting element is mounted on the mount member,
    A light emitting device characterized in that a concave member having a mirror inner surface is formed on a mounting member, and a light emitting element is mounted in the concave portion.
  2. The light emitting element has an anode and a cathode,
    The mount member is a P-type semiconductor substrate, an N-type semiconductor region is formed in a part of the bottom of the recess, and an anode connection portion connected to the anode is provided on the N-type semiconductor region. 2. The light emitting device according to claim 1, further comprising a cathode connection portion connected to the cathode on a P-type semiconductor region in which no region is formed.
  3. The light emitting element has an anode and a cathode,
    The mount member is a P-type semiconductor substrate, and an N-type semiconductor region is formed at two locations on the bottom of the recess, and has an anode connection portion connected to the anode on one N-type semiconductor region, The light emitting device according to claim 1, further comprising a cathode connection portion connected to the cathode on the N-type semiconductor region.
  4. A penetrating conductive layer penetrating between a concave portion forming surface where the concave portion of the mount member is formed and a back surface opposite to the concave portion forming surface;
    A conductor for connecting an anode connection part or a cathode connection part to the through-conductive layer of the recess forming surface;
    The light emitting device according to claim 2, further comprising: an anode plate or a cathode plate connected to the through conductive layer on the back surface.
  5. Two penetrating conductive layers penetrating between a concave portion forming surface where the concave portion of the mount member is formed and a back surface opposite to the concave portion forming surface;
    Two conductors for connecting an anode connecting portion to one of the two through conductive layers of the recess forming surface and a cathode connecting portion to the other;
    4. The light emitting device according to claim 2, further comprising: an anode plate connected to one through conductive layer on the back surface; and a cathode plate connected to the other through conductive layer.
  6. The light emitter according to any one of claims 1 to 5,
    A positive electrode lead and a negative electrode lead connected to the light emitter;
    A light-emitting device comprising: a positive electrode lead, a part of the negative electrode lead, and a translucent cover into which the light emitter is inserted.
  7. The light emitter according to claim 2 or 3,
    A positive lead and a negative lead,
    A conductor connecting the positive lead to the anode connection of the light emitter, and a conductor connecting the negative lead to the cathode connection of the light emitter;
    A light-emitting device comprising: a positive electrode lead, a part of the negative electrode lead, and a translucent cover into which the light emitter is inserted.
  8. The light emitter according to claim 4;
    A positive lead connected to the anode plate of the light emitter, and a negative lead connected to the cathode plate;
    A light-emitting device comprising: a positive electrode lead, a part of the negative electrode lead, and a translucent cover into which the light emitter is inserted.
JP2004198512A 2004-07-05 2004-07-05 Light emitting unit and light emitting device Withdrawn JP2006019666A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235137A (en) * 2006-02-28 2007-09-13 Lg Electronics Inc Light emitting element package and its manufacturing method
JP2008160046A (en) * 2006-12-21 2008-07-10 Lg Electronics Inc Light emitting element package and its manufacturing method
JP2009212394A (en) * 2008-03-05 2009-09-17 Oki Data Corp Semiconductor device, led head, and image forming apparatus
JP2011502356A (en) * 2007-11-01 2011-01-20 エルジー イノテック カンパニー リミテッド Light emitting device package and manufacturing method thereof
EP1876653A3 (en) * 2006-07-07 2013-05-01 LG Electronics Inc. Sub-mount for mounting light emitting device and light emitting device package
JP2017063231A (en) * 2016-12-26 2017-03-30 ローム株式会社 Light-emitting element package and illumination device
US9997682B2 (en) 2010-12-28 2018-06-12 Rohm Co., Ltd. Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235137A (en) * 2006-02-28 2007-09-13 Lg Electronics Inc Light emitting element package and its manufacturing method
JP2013034025A (en) * 2006-02-28 2013-02-14 Lg Electronics Inc Light emitting device package and method of manufacturing the same
EP1876653A3 (en) * 2006-07-07 2013-05-01 LG Electronics Inc. Sub-mount for mounting light emitting device and light emitting device package
JP2008160046A (en) * 2006-12-21 2008-07-10 Lg Electronics Inc Light emitting element package and its manufacturing method
JP2011502356A (en) * 2007-11-01 2011-01-20 エルジー イノテック カンパニー リミテッド Light emitting device package and manufacturing method thereof
US8217416B2 (en) 2007-11-01 2012-07-10 Lg Innotek Co., Ltd. Light emitting device package and method for fabricating the same
JP2009212394A (en) * 2008-03-05 2009-09-17 Oki Data Corp Semiconductor device, led head, and image forming apparatus
US9997682B2 (en) 2010-12-28 2018-06-12 Rohm Co., Ltd. Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device
JP2017063231A (en) * 2016-12-26 2017-03-30 ローム株式会社 Light-emitting element package and illumination device

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