WO2019112250A1 - Light-emitting element package and light source device - Google Patents

Light-emitting element package and light source device Download PDF

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Publication number
WO2019112250A1
WO2019112250A1 PCT/KR2018/015034 KR2018015034W WO2019112250A1 WO 2019112250 A1 WO2019112250 A1 WO 2019112250A1 KR 2018015034 W KR2018015034 W KR 2018015034W WO 2019112250 A1 WO2019112250 A1 WO 2019112250A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
holes
frame
emitting device
disposed
Prior art date
Application number
PCT/KR2018/015034
Other languages
French (fr)
Korean (ko)
Inventor
김원중
송준오
임창만
김기석
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180010230A external-priority patent/KR102471693B1/en
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to US16/769,900 priority Critical patent/US11398589B2/en
Publication of WO2019112250A1 publication Critical patent/WO2019112250A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • An embodiment of the invention relates to a light emitting device package and a light source device.
  • Emitting devices such as light emitting diodes and laser diodes using semiconductor materials of group 3 to 5 or group 2 to group 6 are used for the light emitting devices such as red, Ultraviolet rays and the like can be realized.
  • a light emitting device capable of providing a high output is required, studies have been made on a device capable of increasing output by applying a high power. Further, studies are being made to improve the light extraction efficiency of the light emitting device and improve the light intensity at the package end. Further, studies are being made on a method for improving bonding strength between an electrode of a light emitting device package and a light emitting device.
  • a light emitting device package can be provided in which the center of the upper surface and the center of the lower surface of the through hole of the frame are arranged to be shifted from each other below the light emitting device.
  • Embodiments of the present invention can provide a light emitting device package in which a through hole of a frame or a lower shape of the through hole includes an asymmetric shape in at least one direction.
  • Embodiments of the present invention can provide a light emitting device package in which at least one or both of a conductive portion and a conductive protrusion of a light emitting element are disposed in a through hole of a frame.
  • An embodiment of the present invention can provide a light emitting device package in which a first resin is disposed in a recess of a body disposed between frames and a light emitting element is bonded.
  • Embodiments of the present invention can provide a light emitting device package in which a plurality of light emitting elements disposed on frames are connected through conductive parts disposed in through holes.
  • An embodiment of the present invention provides a light emitting device package in which a light emitting element is connected by disposing a metal connection portion in a through hole of a body.
  • An embodiment of the present invention provides a light emitting device package that connects a plurality of light emitting devices by extending a metal connection portion disposed at a lower portion of a body to a through hole of a body.
  • Embodiments of the present invention provide a light emitting device package in which a plurality of light emitting devices are connected in series or in parallel.
  • a light emitting device package includes a first frame having a first through hole; A second frame having a second through hole; A body disposed between the first and second frames; Wherein the first and second through holes are larger in area than the upper surface, and the center of the upper surface of the first through hole and the center of the lower surface are perpendicular And the center of the upper surface of the second through hole and the center of the lower surface of the second through hole may be offset from each other in the vertical direction.
  • a light emitting device package includes a plurality of frames; A plurality of through holes arranged in each of the plurality of frames; A body disposed between the plurality of frames; A plurality of frames and a light emitting element disposed on the body; And a resin disposed on the upper surface of the plurality of frames, the upper surface of the body, and the through holes, wherein the light emitting element includes a plurality of conductive protrusions penetrating through the plurality of through holes at a lower portion thereof,
  • the plurality of conductive protrusions have a height equal to or greater than the thickness of the frame, and each of the plurality of conductive protrusions has a shape of a pillar shape of a metal material, The center of the center and the center of the lower face may be offset from each other in the vertical direction.
  • the width of the lower surface of the first through hole is wider than the width of the upper surface of the first through hole in the first direction
  • the width of the lower surface of the second through hole is larger than the width of the second through hole
  • And may be wider than the width of the upper surface.
  • the width of the lower surface of the first through hole is wider than the width of the upper surface of the first through hole in the second direction
  • the width of the lower surface of the second through hole is wider than the width of the upper surface of the second through hole in the second direction
  • the length of the light emitting device in the first direction may be longer than the length of the second direction.
  • the centers of the lower surfaces of the first and second through holes may be further spaced from the body than the center of the upper surface of the first and second through holes.
  • the center of the lower surface of the first through hole is spaced away from the second frame with respect to the center of the upper surface of the first through hole and the center of the lower surface of the second through hole is spaced apart from the center of the upper surface of the second through hole In a direction away from the first frame.
  • the body may have at least one recess on the top and a first resin on the recess.
  • the conductive portions may be disposed in the first and second through holes.
  • the light emitting device may include a conductive protrusion disposed in the first and second through holes, and the conductive protrusion may be in contact with the conductive portion.
  • a second resin may be disposed around the lower portion of the light emitting device.
  • a third resin or conductive portion may be disposed in the first and second through holes, and the light emitting element may include a conductive protrusion disposed in the first and second through holes. The conductive protrusions may be exposed to the lower surface of the frame through the first and second through holes.
  • the conductive protrusion may have a thickness greater than the thickness of the first and second frames.
  • the recess may be overlapped with the light emitting element in a vertical direction.
  • the recess may have an inner portion overlapping with the light emitting element in the vertical direction, and an outer portion extending outward from the light emitting element.
  • the recesses are arranged in a plurality, and the depth of the recesses may be smaller than the depth of the through-holes.
  • a light source apparatus includes: a circuit board; And one or a plurality of light emitting device packages may be disposed on the circuit board.
  • the present invention it is possible to improve the adhesive force and the electric conductivity of the bonding portion by providing the conductive portion in the through hole of the frame facing the bonding portions of the light emitting device. According to the present invention, it is possible to improve the adhesive force and electrical conductivity of the bonded portion of the flip chip by arranging a columnar conductive protrusion protruding from the lower portion of the bonding portion of the light emitting element in the through hole of the frame. According to the invention, it is possible to improve the adhesive force and electrical conductivity of the conductive protrusions of the flip chip by arranging columnar conductive protrusions and resin protruding from the lower portion of the bonding portion of the light emitting element in the through holes of the frame.
  • the through holes of the frame facing the bonding parts of the light emitting device are provided in an asymmetrical shape in the lower part, so that the adhesive force and the electric conductivity of the bonding part can be improved.
  • a first resin for bonding between the light emitting element and the body can be disposed to improve the adhesive force and the supporting force of the light emitting element.
  • the first resin can be disposed in the recess of the body facing the light emitting element to improve the adhesive force and the supporting force of the light emitting element.
  • one or a plurality of light emitting cells can be arranged in a plurality of light emitting elements to provide a high voltage package.
  • a plurality of light emitting devices can be connected in series to provide a high voltage package. According to the embodiment, it is possible to switch the driving voltage of the package by selectively connecting the plurality of light emitting elements to the frame or the conductive portion.
  • the light extraction efficiency, electrical characteristics and reliability can be improved.
  • the process efficiency of the package can be improved, the manufacturing cost can be reduced, and the manufacturing yield can be improved.
  • the package of the embodiment provides a body having a high reflectance, so that discoloration of the body can be suppressed and reliability can be improved. According to the embodiment, it is possible to prevent the re-melting phenomenon from occurring in the process of re-bonding the light emitting device package to a substrate or the like.
  • FIG. 1 is a plan view of a light emitting device package according to a first embodiment of the present invention.
  • FIG. 2 is a bottom view of the light emitting device package of Fig.
  • FIG. 3 is a cross-sectional view taken along the line G-G of the light emitting device package of Fig.
  • FIG. 4 is a view illustrating an example in which a part of a light emitting device is inserted into a through hole in the light emitting device package of FIG.
  • FIG. 5 is a view showing a detailed structure of a through hole of a frame according to an embodiment.
  • FIG. 6 is a view showing the shape of the through hole in the bottom surface of the frame according to the embodiment.
  • Figs. 7 and 8 are views showing another example of the through-hole of Fig. 6.
  • Fig. 7 and 8 are views showing another example of the through-hole of Fig. 6.
  • Fig. 9 is a view for explaining the detailed structure disposed in the through hole in the frame of the multi-layer structure in Fig. 5;
  • Fig. 10 is a comparative example of the invention, wherein (a) shows a case where a symmetrical through hole is formed in a frame, and (b) is an explanatory view of an example when a conductive protrusion of a light emitting element is coupled to a symmetrical through hole in a frame.
  • 11 and 12 are views showing another form of the through hole of the frame according to the embodiment of the present invention.
  • FIG. 13 is a plan view of a light emitting device package according to a second embodiment of the present invention.
  • FIG. 14 is a cross-sectional view along the line A-A 'of the light emitting device package of Fig.
  • 15 is a cross-sectional view taken along the line C-C 'of the light emitting device package of FIG.
  • FIG. 17 is a view for explaining the relationship between the through hole of the frame disposed in the light emitting device package of FIG. 19, the recess of the body, and the bonding portion of the light emitting device.
  • FIG. 18 is a plan view of a light emitting device package according to the third embodiment.
  • 19 (a) and 19 (b) are a front view and a rear view of the frame of the light emitting device package of FIG. 18;
  • FIG. 20 is a side cross-sectional view of the light emitting device package of FIG. 18 through the connection frame portion of the second frame.
  • 21 is an example of a light source device having the light emitting device package of Fig.
  • 22A and 22B are graphs showing the thermal resistance in the light emitting device package in the comparative examples 1 and 2 and the embodiment in the description of FIG.
  • FIG. 23 is a plan view of a light emitting device package according to a fourth embodiment of the present invention.
  • FIG. 24 is a bottom view of the light emitting device package of Fig.
  • FIG. 25 is a cross-sectional view of the light emitting device package of Fig. 23 on the C1-C1 side.
  • 26 is another example of a sectional view taken on the C1-C1 side of the light emitting device package of Fig.
  • FIG. 27 is a plan view of a light emitting device package according to a fifth embodiment of the present invention.
  • FIG. 28 is a bottom view of the light emitting device package of Fig.
  • FIG. 29 is a sectional view taken along the line D1-D1 of the light emitting device package of Fig.
  • FIG. 30 is a cross-sectional view of the light emitting device package of Fig. 27 on the E1-E1 side.
  • 31 is an example in which a conductive portion is arranged in a through hole of the light emitting device package of Fig.
  • the singular forms may include plural forms unless otherwise specified in the text, and may be combined into A, B, and C when they are described as "A and / or at least one (or more than one) Or < / RTI > all possible combinations.
  • terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the components from other components, and are not defined by the terms in their essence, order or sequence.
  • an element when an element is described as being 'connected', 'coupled' or 'connected' to another element, the element is not only directly connected to, coupled to, or connected to the other element, Or " connected " due to another component between the other components.
  • the upper (upper) or lower (lower) when it is described as being formed or disposed on the upper or lower side of each component, the upper (upper) or lower (lower) is not only the case where the two components are in direct contact with each other, But also includes the case where another component is formed or disposed between two components. Also, in the case of "upper (upper) or lower (lower)", it may include not only an upward direction but also a downward direction based on one component.
  • the light emitting device package 300 may include a package body 310 and a light emitting device 350.
  • the package body 310 may include a body 313 and a frame 311 and 312.
  • the frame 311 and 312 may include a first frame 311 and a second frame 312 spaced apart from each other and the body 313 may be disposed between the first frame 311 and the second frame 312 .
  • the body 313 may be further disposed on the first frame 311 and the second frame 312.
  • the body 313 may provide an inclined inner surface to the upper opened cavity 302 and the cavity 302 may expose the upper surface of the first frame 311 and the upper surface of the second frame 312 .
  • the inner side surface of the cavity 302 may be arranged in a stepped structure or a stepped structure.
  • the package body 310 may be provided with a structure having the cavity 302 or may be provided with a flat structure without a cavity.
  • An upper body 310A having a cavity 302 may be disposed on the body 313.
  • the upper body 310A may be made of the same material as the body 313 or may be a separate material.
  • the body 313 may be formed of a material such as PPA (Polyphthalamide), PCT (Polychloro Tri phenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy, epoxy molding compound, , Ceramics, photo sensitive glass (PSG), and sapphire (Al 2 O 3 ).
  • the body 313 may include a high refractive index filler such as TiO 2 and SiO 2 in the resin.
  • the upper body 310A may be made of resin or an insulating material, or may function as a reflecting body.
  • the length of the package body 310 in the first direction X may be greater than or equal to the length of the second direction Y.
  • the first and second sides S1 and S2 of the package body 310 or the body 313 may extend in the second direction and may be opposite sides and the third and fourth sides S3 and S4 may extend in the first direction And may be opposite to each other.
  • the first to fourth side surfaces S1, S2, S3, and S4 may be arranged vertically or inclinedly and may be the outer surface of the body 313.
  • the first frame 311 and the second frame 312 may be provided as a conductive or metal frame.
  • the metal frame may be made of, for example, copper, titanium, nickel, gold, chromium, tantalum, platinum, tin, ), And may be formed as a single layer or multiple layers.
  • the first extension 317 of the first frame 311 may extend or protrude in the direction of the first side S1.
  • the second extension 318 of the second frame 312 may extend or protrude in the direction of the second side S2.
  • Each of the first and second extension portions 317 and 318 may be disposed in one or more than one.
  • the first frame 311 and the second frame 312 may be provided as an insulating frame.
  • the light emitting device 350 may include first and second bonding portions 351 and 352 and a light emitting structure 353.
  • the light emitting device 350 may include a substrate 354 made of a translucent material.
  • the length of the light emitting device 350 in the first direction may be greater than the length of the second direction.
  • the light emitting structure 353 may be provided as a compound semiconductor, and may include an active layer between the first and second conductivity type semiconductor layers and between the first and second conductivity type semiconductor layers.
  • the first bonding portion 351 may be electrically connected to the first conductivity type semiconductor layer.
  • the second bonding portion 352 may be electrically connected to the second conductive type semiconductor layer.
  • the active layer may be implemented, for example, in at least one of Group 3-Group-5 or Group-6-Group compound semiconductors.
  • the substrate 354 may be a sapphire substrate (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge.
  • the light emitting device 350 may be disposed on the first and second frames 311 and 312 and the body 313.
  • the light emitting device 350 may be disposed in the cavity 302.
  • the first bonding portion 351 is disposed between the light emitting structure 353 and the first frame 311 and the second bonding portion 352 is disposed between the light emitting structure 353 and the second frame 312. [ As shown in FIG.
  • the first and second bonding portions 351 and 352 may be made of a metal and may be made of a metal such as Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, And at least one of Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au and Ni / IrOx / .
  • the light emitting device 350 may include one or more light emitting cells.
  • the light emitting cell may include at least one of a light emitting structure including an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction.
  • the plurality of light emitting cells may be connected in series in one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are arranged in one light emitting device, the light emitting device may be driven with a driving voltage of n times.
  • the first resin 330 may overlap the light emitting device 350 in the vertical direction on the body 313.
  • the first resin 330 may include at least one of a hybrid material including an epoxy-based material, a silicone-based material, an epoxy-based material, and a silicon-based material.
  • the first resin 330 may be a white silicone material or may be formed of a material such as TiO 2 , SiO 2 , Al 2 O 3 Or the like.
  • the first resin 330 may be adhered to the light emitting device 350 and the body 313.
  • the first resin 330 may be bonded between the first bonding portion 351 and the second bonding portion 352 of the light emitting device 350.
  • the first resin 330 may prevent the light emitting device 350 from being tilted when bonding the bonding portions 351 and 352 of the light emitting device 350 or bonding the same to a circuit board.
  • the light emitting device package 300 may include at least two through holes.
  • the first frame 311 may include a first through hole TH31 and the second frame 312 may include a second through hole TH32.
  • Each of the first and second through holes TH31 and TH32 may pass through the top and bottom surfaces of the first and second frames 311 and 312 and may be provided in one or more.
  • the first and second through holes TH31 and TH32 may be spaced apart from the body 313 in the horizontal direction and may overlap the light emitting device 350 in the vertical direction, 351 and 352, respectively.
  • the first and second bonding portions 351 and 352 are exposed through the first and second through holes TH31 and TH32 and electrically connected to the conductive portions 321 and 322 disposed in the first and second through holes TH31 and TH32, ) To the electrical path and the heat dissipation path.
  • the first and second through holes TH31 and TH32 may have the same or different top view shapes or top shapes, and may be circular, elliptical, or polygonal shapes, for example.
  • the first and second through holes TH31 and TH32 may have a top surface shape and a bottom surface shape, and may be formed in an asymmetric shape, for example.
  • the bottom surface area of the first and second through holes TH31 and TH32 may be larger than the top surface area.
  • the center Pc1 of the upper surface of each of the through holes TH31 and TH32 and the center Pc2 of the lower surface of the through holes TH31 and TH32 may be shifted from each other.
  • the center Pc1 of the upper surface in the first through hole TH31 is disposed closer to the second frame 312 or the second side S2 than the center Pc2 of the lower surface, May be closer to the second frame 312 or the second side S2 than the center Pc1 of the upper surface.
  • the center Pc1 of the upper surface in the second through hole TH32 is disposed closer to the first frame 311 or the first side S1 than the center Pc2 of the lower surface, It may be closer to the first frame 311 or the first side S1 than the center Pc1 of the upper surface.
  • the center of the upper surface of each of the through holes TH31 and TH32 connects the points forming the outline lines on the upper surface of each of the through holes TH31 and TH32 in an intersecting direction and the longest virtual straight line in each direction crosses May be the center.
  • the center of the upper surface of each of the through holes TH31 and TH32 may be a point where the longest virtual straight line intersects in the first and second directions.
  • the center of the upper surface of each of the through holes TH31 and TH32 may be the center of gravity of the upper surface.
  • the centers of the lower surfaces of the through holes TH31 and TH32 connect virtual lines in directions intersecting the points forming the outline lines on the lower surfaces of the through holes TH31 and TH32, The point at which the imaginary straight line intersects can be the center.
  • the center of the lower surface of each of the through holes TH31 and TH32 may be a point at which the longest virtual straight line intersects in the first and second directions.
  • the lower center of each of the through holes TH31 and TH32 can be the center of gravity of the lower face.
  • W1 W2 ⁇ W4 ⁇ W2.
  • the ratio of W1: W2 is 1: 1.5 to 1: 2.4
  • the ratio of W3: W4 is 1: 1.2 to 1: 1.6.
  • the bottom widths of the through holes TH31 and TH32 in the first and second directions are larger than the top width so that the conductive portions 321 filled in or inserted into the through holes TH31 and TH32 have a higher density It is possible to improve the electric conduction efficiency and to suppress the crack of the conductive material.
  • the conductive material may be defined as a conductive part 321 and / or a conductive protrusion.
  • the upper surface area of each of the through holes TH31 and TH32 may be 30% or more, for example, 30% to 98% of the bottom surface area of each of the bonding portions 351 and 352.
  • the width W1 in the first direction at the upper portion of each of the through holes TH31 and TH32 may be 5 ⁇ m or less than the width W3 in the second direction.
  • the width W4 in the second direction from the bottom may be wider than 50 m or more than the width W3 in the second direction.
  • the lower width W4 may be wider than the upper width W3 in the range of 50 to 150 mu m.
  • the bottom width W2 in the first direction may be 100 mu m or more wider than the bottom width W4 in the second direction.
  • the difference between the lower width W2 in the first direction and the lower width W4 in the second direction may be 100 mu m or more.
  • the width W2 of the through holes TH31 and TH32 in the first direction in the lower direction may be in the range of 400 m or more, for example, 400 to 600 m or 450 to 600 m.
  • the width W4 in the second direction in the lower portions of the through holes TH31 and TH32 may be in the range of 300 mu m or more, for example, 300 to 400 mu m.
  • the lower portions of the through holes TH31 and TH32 are formed asymmetrically with respect to the upper portion so that the amount of the conductive portions 321 filled in the upper portions of the lower portions of the through holes TH31 and TH32 Can be increased.
  • the depths of the through holes TH31 and TH32 may be equal to the thickness of the frames 311 and 312, respectively.
  • the through holes TH31 and TH32 may have a gradually wider width from the top to the bottom.
  • the through holes TH31 and TH32 may have a larger width in the first direction than a width in the second direction.
  • the inner surfaces of the through holes TH31 and TH32 may include at least two of a vertical surface, an inclined surface, a convex surface, or a concave surface.
  • the inside surfaces of the through holes TH31 and TH32 may have convex curved surfaces and concave curved surfaces, or may have inflection points between concave curved surfaces and convex curved surfaces.
  • the inflection points in the through holes TH31 and TH32 and the boundary points CP1 and CP2 (see FIG. 5) at the upper and lower sides may be closer to the upper surface than the lower surface of the frames 311 and 312.
  • the inner surfaces of the through holes TH31 and TH32 may be arranged with a rough surface on a convex curved surface.
  • the thickness k0 of the frames 311 and 312 may be in the range of 180 ⁇ ⁇ or more, for example, 180 to 300 ⁇ ⁇ . If the thickness k0 of the frames 311 and 312 is larger than the above range, the package thickness may be increased. If the thickness k0 is smaller than the above range, the heat dissipation efficiency may be lowered.
  • the upper thickness k2 of the inner region of each of the through holes TH31 and TH32 may be thicker than the upper thickness k1 of the outer region.
  • the inner region of each of the through holes TH31 and TH32 may be a region further adjacent to the body 315.
  • the inner area of each of the through holes TH31 and TH32 in the frames 311 and 312 may have a top thickness k2 of 0.4 times or less of the thickness k0 of each of the frames 311 and 312, .
  • the outer regions of the through holes TH31 and TH32 in the frames 311 and 312 are formed such that the upper thickness k1 is 0.45 times or less of the thickness k0 of the first and second frames 311 and 312, Lt; / RTI >
  • the upper thickness k1 of the outer region in each of the through holes TH31 and TH32 may be less than 100 mu m.
  • the difference between the upper thickness k1 of the outer region and the upper thickness k2 of the inner region in each of the through holes TH31 and TH32 may be in the range of 10 ⁇ m or more, for example, 10 to 40 ⁇ m.
  • the inner region and the outer region in the through holes TH31 and TH32 may be the boundary points CP1 and CP2 and the thickness may be a distance to the upper surface of the frame at the boundary points CP1 and CP2 . Since the upper thickness k1 < k2 of the outer region in each of the through holes TH31 and TH32 is thinner, the lower width of each of the through holes TH31 and TH32 can be widened.
  • the lower portions of the through holes TH31 and TH32 can be formed in an asymmetrical shape so that the through holes TH31 and TH32 are filled with the higher density or more when the conductive portion 321 is filled And can be hardened.
  • the straight line connecting the boundary points CP1 and CP2 of the through holes TH31 and TH32 and the lower ends of the through holes TH31 and TH32 is a straight line connecting the first and second angles? ).
  • the first angle? 35 of the straight line extending from the inflection point of the outer region in the through holes TH31 and TH32 may be larger than the second angle? 36 of the straight line extending from the inflection point of the inner region.
  • the method of forming the through-hole in the frame can increase the etching pressure of the lower portion of the through-hole to be larger than the injection pressure of the upper portion of the etching liquid, thereby increasing the etching area under the through-hole.
  • the recesses R31 and R32 may be provided on the upper portion of the body 313, or may be recessed in a downward direction from the upper surface of the body 313.
  • the recesses R31 and R32 may be disposed between the first and second through holes TH31 and TH32 or may be disposed between the first and second frames 311 and 312.
  • the recesses R31 and R32 may include first and second recesses R31 and R32 and at least a part or all of the first and second recesses R31 and R32 may be connected to the light emitting element 350 in the vertical direction.
  • the first and second recesses R31 and R32 may not overlap with the first and second through holes TH31 and TH32 in the first direction so that the dam of the first resin 330 ) Can play a role.
  • the first and second recesses R31 and R32 may include an inner portion overlapping the light emitting device 350 and an outer portion protruding outward from the light emitting device 350.
  • the ratio of the inner portion to the outer portion in the first and second recesses R31 and R32 may be in the range of 4: 6 to 6: 4, and the light loss at the lower portion of the light emitting device 350 may be reduced .
  • the recesses R31 and R32 of the body 313 relax the thermal deformation of the body in the first direction, thereby suppressing the crack of the conductive paste.
  • the difference t2-t1 between the depths t2 and t1 is at least 150 ⁇ m Or more.
  • the thickness of the body 313 may be provided in consideration of crack free.
  • the depth t2 may be provided in the range of 2.5 to 12 times the depth t1. As an example, when the depth of t2 is provided as 200 mu m, the depth of t1 may be provided as 20 mu m to 100 mu m.
  • the recesses (R31, R32) and the first resin (330) can enhance the adhesion of the light emitting device (350).
  • the first resin 330 may diffuse or reflect the incident light.
  • the first direction width of the recesses R31 and R32 may be narrower than the gap between the first bonding portion 351 and the second bonding portion 352.
  • the width of the recesses R31 and R32 may be 140 mu m or more, ≪ / RTI >
  • the length of the recesses R31 and R32 in the second direction may be smaller than the length of the light emitting device 350 in the second direction.
  • the recesses R31 and R32 may be polygonal, circular or elliptical in top view shape.
  • the recesses R31 and R32 may have a polygonal or curved cross-sectional shape. Each of the recesses R31 and R32 may have an upper width larger than a lower width in the first and second directions.
  • the recesses R31 and R32 may be provided with an inclined surface to guide the first resin 330. As another example, the recesses R31 and R32 may be removed on the body 313.
  • the conductive portion 321 may be disposed in the first and second through holes TH31 and TH32.
  • the conductive part 321 disposed in the first through hole TH31 may be in contact with the lower surface of the first bonding part 351 and the first frame 311.
  • the conductive part 321 disposed in the second through hole TH32 may be in contact with the lower surface of the second bonding part 352 and the second frame 312.
  • the conductive portions 321 disposed in the first and second through holes TH31 and TH32 may be filled in a range of 30% or more, for example, 30% to 300% of the volume of the through holes TH31 and TH32, If it is smaller than the above range, the electrical reliability may be deteriorated.
  • the conductive portion 321 may include a material selected from the group consisting of Ag, Au, Pt, Sn, Cu, Zn, In, Bi,
  • the conductive part 321 may be a solder paste, and may be formed by mixing powder particles or particle particles with flux.
  • the solder paste may include Sn-Ag-Cu, and the weight percentage of each metal may be varied.
  • the conductive portion 321 may be formed of a conductive paste having a solder paste or a silver paste, or may be formed of a multi-layer or an alloy composed of different materials.
  • An alloy layer may be formed between the conductive part 321 and the frames 311 and 312, and the alloy layer may include an intermetallic compound layer having at least one of AgSn, CuSn, and AuSn.
  • the bonding portions 351 and 352 of the light emitting device 350 may be electrically connected to the conductive portion 321 in the process of forming the conductive portion 321 and the conductive portion 321, Intermetallic compound (IMC) layers may be formed between the first and second substrates 321 and 321 and the frames 311 and 312, respectively.
  • IMC Intermetallic compound
  • the first and second through holes TH31 and TH32 may include a void at a boundary surface with the conductive portion 321.
  • the void may be generated at the interface between another frame or the bonding portion when the conductive portion 321 is filled. Since the filling amount of the conductive portions is increased by the shapes of the first and second through holes, generation of voids can be suppressed or eliminated, cracks in the conductive portions can be prevented, and electric conduction efficiency and heat conduction efficiency can be improved You can give.
  • lower recesses R33 and R33 may be disposed under the first and second frames 311 and 312, respectively.
  • the lower recesses R33 and R34 may be coupled to a portion of the body 313 around the lower portion of the first and second through holes TH31 and TH32.
  • the light emitting device 350 includes first and second conductive protrusions 351A and 352A at a lower portion thereof, and the first and second conductive protrusions 351A and 352A include first and second conductive protrusions 351A and 352A. And may extend in the bottom direction of the body in the bonding portions 351 and 352 and may be disposed in the first and second through holes TH31 and TH32.
  • the first and second conductive protrusions 351A and 352A may be formed of a metal material and include at least one material selected from Ag, Au, Cu, Ti, and Ni, and may be formed as a single layer or multiple layers.
  • the first and second conductive protrusions 351A and 352A may include a seed layer.
  • the seed layer may have at least one of Ti, Ni, and Cu as a single layer or a multi-layer.
  • the first and second conductive protrusions 351A and 352A may include a metal column protruded on the seed layer, and the metal column may include at least one of Cu, Au, and Ag.
  • the metal column may have a bottom view shape of a circular column or a polygonal columnar shape.
  • the gap between the first and second conductive protrusions 351A and 352A may be wider than the minimum gap between the first and second through holes TH31 and TH32.
  • the first and second conductive protrusions 351A and 352A have a bottom area smaller than the bottom area of the first and second bonding parts 351 and 352 and are disposed in the first and second through holes TH31 and TH32
  • the conductive part 321 may be connected to the conductive part 321.
  • the first bonding portion 351, the first conductive protrusion 351A, the conductive portion 321, and the first frame 311 may be partially bonded.
  • the second bonding portion 352, the second conductive protrusion 352A, the conductive portion 321, and the second frame 312 may be partially bonded.
  • the first and second conductive protrusions 351A and 352A are formed by cracking of the conductive portion 321 due to thermal deformation at the interface between the conductive portion 321 and the first and second bonding portions 351 and 352 It is possible to suppress diffusion.
  • the first and second conductive protrusions 351A and 352A are formed to have a depth equal to or greater than 5% of the depth of the first and second through holes TH31 and TH32 from the upper surfaces of the first and second through holes TH31 and TH32 , And 5% to 40%.
  • the through holes TH31 and TH32 may have an elliptical shape whose upper shape is a circular shape and whose lower or bottom shape is long in the first direction, or a polygonal shape having a curved corner. . Since the areas of the through holes TH31 and TH32 are formed to be wider as the distance from the body 313 with respect to the body 313 is larger, the bonding area of the conductive parts or the amount of the filling can be increased . As shown in FIG. 7, the through holes TH31 and TH32 may have an elliptical shape whose upper shape is long in the second direction, an elliptical shape whose lower shape is long in the first direction, Shaped shape.
  • the upper shape and the lower shape of the through holes TH31 and TH32 may be arranged in a direction in which the long shapes are orthogonal to each other.
  • the shape of the conductive protrusions 351A and 352A disposed in the through holes TH31 and TH32 may be long in the second direction.
  • the through holes TH31 and TH32 may have a circular shape with an upper shape and a lower shape with a circular shape having a diameter larger than that of the upper shape. 6 to 8, the relationship between the widths W1 and W2 in the first direction and the widths W3 and W4 in the second direction will be described with reference to the above description.
  • the conductive portions are disposed in the through holes TH31 and TH32 and can be coupled with the conductive protrusions 351A and 352A.
  • the reflow process it is possible to suppress the occurrence of re-melting in the bonding region between the frame provided in the light emitting device package and the light emitting device. That is, the melting point of the conductive part can be provided at a higher value than the melting point of the other bonding material. Therefore, when the light emitting device package is bonded onto the main substrate through the reflow process, the phenomenon of re-melting in the periphery of the light emitting device is suppressed and the deterioration of electrical connection and physical bonding force is prevented can do. Therefore, damage or discoloration of the package body 310 can be prevented.
  • the molding part 340 is formed of a light-transmitting material and may be disposed on the light emitting device 350, the first and second frames 311 and 312.
  • the molding part 340 may be disposed in the cavity 302.
  • the molding unit 340 includes at least one of a phosphor and a quantum dot, and can emit wavelength-converted light.
  • the light emitting device 350 may emit blue, green, red, white, infrared, or ultraviolet light.
  • the molding part 340 may not be formed.
  • the frames 311 and 312 include first and second metal layers L1 and L2, the first metal layer L1 is a base layer, and may include Cu, Ni, and Ti, Or may be formed in multiple layers.
  • the second metal layer L2 may include at least one of Au, Ni, and Ag layers.
  • the Ni layer has a small change in thermal expansion.
  • the Ag layer efficiently reflects the emitted light, And the Au layer can improve the bonding force with the bonding portions 351 and 352 and improve the reflection efficiency.
  • the conductive portion 321 may be filled up to 100% or less in the through holes TH31 and TH32 and may be filled in the range of 30% to 100%, for example. If the conductive portion 321 is out of the range, And when it is smaller than the above range, the conductivity characteristics may be deteriorated.
  • An alloy layer L3 may be formed between the conductive parts 321 and the frames 311 and 312 by bonding between the two materials.
  • the alloy layer L3 may include an intermetallic compound layer having at least one of AgSn, CuSn, and AuSn.
  • the convex portion Pa between the upper portion and the lower portion protrudes in the hole in the through holes TH31 and TH32 as shown in FIG. 10A
  • the convex portion Pa The injection efficiency may be lowered and the void region may be larger on the hole.
  • cracks may be generated at the interface between the bonding portion 351 and the conductive portion 321 due to thermal deformation, and the electrical conductivity may be lowered.
  • the conductive portion 321 is hardly filled between the conductive protrusion 351A and the through hole 351 even when the conductive protrusion 351A of the light emitting element is coupled to the through hole 351 as shown in Figure 10 (b)
  • the void area is not reduced, cracks may occur in the conductive part, or reliability due to voids may be deteriorated.
  • the heat transfer efficiency in the direction (Px1, Px2) can be degraded. Accordingly, the bottom widths of the through holes TH31 and TH32 can be wider in the second direction orthogonal to the first direction.
  • the extending direction in the second direction from the lower part of the through holes TH31 and TH32 may be formed in a direction orthogonal to the first direction or may be shifted by an angle of 30 to 60 degrees. Accordingly, the heat transfer efficiency with respect to the frame in the first direction can be prevented from being lowered. Referring to FIG.
  • the centers of the upper and lower surfaces of the through holes TH31 and TH32 may be located at the same center. Accordingly, the heat transfer efficiency with respect to the frame in the first direction can be prevented from being lowered, and the conductive portions 321 can be filled or contacted with the uniform distribution by the through holes TH31 and TH32 having the same center have.
  • FIG. 13 to 17 are views illustrating a light emitting device package according to the second embodiment.
  • the same configuration as that of the first embodiment can be selectively applied with reference to the first embodiment.
  • the light emitting device package 100 includes a plurality of frames 120, 130, 135, and 140, a body 115, and a plurality of light emitting devices 151, 152, and 153.
  • the plurality of light emitting devices 151, 152, and 153 may be individually driven, connected in series or in parallel, and may include one or more light emitting cells.
  • the length in the first direction may be equal to or greater than 2.5 mm, for example, 2.5 to 7 mm
  • the length in the second direction may be equal to or greater than the length in the first direction.
  • the body 115 may be disposed between the first through fourth frames 120, 130, 135, and 140 and may be coupled to and supported by the first through fourth frames 120, 130, 135, and 140.
  • the second frame 130 may be disposed between the first and third frames 120 and 135 and the third frame 135 may be disposed between the second and fourth frames 120 and 140.
  • One, two, or three or more frames may be disposed between the first and fourth frames 120 and 140, depending on the number of the light emitting devices.
  • At least one or two or more of the frames 120, 130, 135, and 140 may include at least one through hole.
  • At least one of the frames 120, 130, 135, and 140 may include a plurality of through holes.
  • the first frame 120 includes a first through hole TH1 and the second frame 120 includes second and third through holes TH2 and TH3.
  • Fourth through-holes TH4 and TH5 and the fourth frame 140 may include a sixth through-hole TH6.
  • the first frame 120 overlaps with a part of the first light emitting device 151 in the vertical direction and the fourth frame 140 overlaps with a part of the third light emitting device 153 in the vertical direction .
  • the first extension portion 123 of the first frame 120 and the second extension portion 143 of the fourth frame 140 are connected to the first side surface S1 and the second side surface S2 of the package body 110A, As shown in Fig.
  • the lengths of the first and second extension parts 123 and 143 in the Y direction are not less than 1/2 of the length of the package body 110A in the Y direction so that the heat radiation efficiency and the bonding force can be enhanced.
  • the width of the region protruding from the first and second extension portions 123 and 143 may be at least 100 ⁇ m or more in the X direction.
  • the second frame 130 may include first and second frame parts 131 and 132 and a first connection frame part 133 connecting the first and second frame parts 131 and 132.
  • the first frame part 131 may correspond to the first frame 120 in the Y direction and the second frame part 132 may correspond to the first frame 120 in the X direction.
  • the first connection frame part 133 may be disposed between the first frame 120 and the third frame part 136 of the third frame 135.
  • the first frame part 131 and the first frame 120 may be disposed under the first light emitting device 151 and may be electrically connected to the first light emitting device 151.
  • the second frame 130 may connect the first light emitting device 151 and the second light emitting device 152 in series.
  • the third frame 135 may include a second connection frame portion 138 connecting the third and fourth frame portions 136 and 137 and the third and fourth frame portions 136 and 137.
  • the second connection frame portion 138 may be disposed between the second frame portion 132 and the fourth frame 140 of the second frame 130.
  • the third frame portion 136 and the second frame portion 132 of the second frame 130 may be disposed below the second light emitting device 152 and may be electrically connected to the second light emitting device 152 .
  • the fourth frame part 137 and the fourth frame 140 may be disposed under the third light emitting device 153 and may be electrically connected to the third light emitting device 153.
  • the third frame 135 may connect the second light emitting device 152 and the third light emitting device 153 in series.
  • connection region between the second and third through holes TH2 and TH3 is the first connection frame portion 133 and the connection region between the fourth and fifth through holes TH4 and TH5 is the connection region between the second connection.
  • the minimum width of the first and second connection frame parts 133 and 138 is larger than the maximum width of the lower surface of the through holes TH1 to TH6, interference with the adjacent recesses may occur , It may be difficult to form the through holes TH1 to TH6.
  • the first and second connection frame portions 133 and 138 may be exposed on the lower surface of the body 115.
  • the first and second connection frame portions 133 and 138 may be spaced from the lower surface of the body 115.
  • the first and second connection frame portions 133 and 138 may have a thickness smaller than the depth of the through holes TH1 to TH6 in the vertical direction or may have a thickness smaller than the thickness of the frames 120, 130, 135 and 140.
  • Each of the frames 120, 130, 135 and 140 may have one or a plurality of protrusions protruding from the third side surface S3 and the fourth side surface S4 and coupled to the body 115.
  • the second and third frames 130 and 135 may have the same shape.
  • Each of the first to fourth frames 120, 130, 135 and 140 may include an upper recess R51 or a stepped structure on the upper portion. The depth of the upper recess R51 may be in the range of 40% to 60% of the thickness of the frames 120, 130, 135 and 140 so that the frames 120, 130, 135 and 140 can be prevented from lowering in strength.
  • the upper region overlapping the regions of the through holes TH1 to TH6 in each of the frames 120, 130, 135 and 140 may have a minimum distance D4 to the upper recess R51 of 80 mu m or more, for example, 80 to 150 mu m . Accordingly, rigidity of the frame portion contacting with the body 115 can be ensured, and when the through holes TH1 to TH6 are formed and injected, it is possible to prevent damage to the rigidity of the frame by the step structure or recess have.
  • the second through hole TH2 is formed in the first frame portion 131 of the second frame 130 and the third through hole TH3 is formed in the second frame portion 132 of the second frame 130,
  • the through hole TH4 may be disposed in the third frame portion 136 of the third frame 135 and the fifth through hole TH5 may be disposed in the fourth frame portion 137 of the third frame 135.
  • the first and second through holes TH1 and TH2, the third and fourth through holes TH3 and TH4 and the fifth and sixth through holes TH5 and TH6 are formed in the first through third light emitting devices 151, 152, 153) in the vertical direction.
  • the conductive protrusions 51A and 52A of the light emitting devices 151 and 152 are inserted into the through holes TH1 to TH6, the conductive protrusions 51A and 52A can be bonded to the conductive parts 321, Or increase the crack path.
  • the detailed configuration of the through holes TH1 to TH6, the conductive portions 321 and the conductive protrusions 51A and 52A will be selectively applied to the description and the configuration of the embodiment (s).
  • the first through hole TH1 and the sixth through hole TH6 may be spaced apart from each other in the diagonal direction and may be spaced apart from each other by a maximum length of the interval between the through holes TH1 through TH6.
  • the total number of the through holes TH1 to TH6 may be two times the number of the light emitting devices 151, 152, and 153.
  • the upper surface area of each of the through holes TH1 to TH6 may have a range of 30% or more, for example, 30% to 98% of the bottom surface area of each of the bonding portions 51 and 52.
  • the configurations of the inner surfaces of the through holes TH1 to TH6, the conductive portions 321 and the conductive protrusions 51A and 52A will be described with reference to the description of the embodiment (s) selectively.
  • the driving voltage supplied to the light emitting device package can be increased in proportion to the number of light emitting cells in the light emitting devices 151, 152, and 153, and can be supplied at a high voltage. Such a high-voltage light emitting device package is capable of adjusting the dimming, thereby adjusting the brightness of the emitted light.
  • the plurality of recesses R1, R2, and R3 may be arranged in a first direction on the body 115, or in a direction in which the light emitting devices 151, 152, and 153 are arranged .
  • the first recess R 1 is disposed between the first frame 120 and the first frame portion 131 of the second frame 130 and the second recess R 2 is disposed between the first frame 120 and the second frame 130. 2 frame section 132 and the third frame section 136 of the third frame 135.
  • the third recess R3 may be disposed between the fourth frame portion 137 and the fourth frame 140 of the third frame 135.
  • the first connection frame part 133 is disposed between the first and second recesses R1 and R2 and the second connection frame part 138 is disposed between the second and third recesses R2 and R3 As shown in FIG.
  • the first recess R1 is disposed between the first and second through holes TH1 and TH2 and the second recess R2 is disposed between the third and fourth through holes TH3 and TH4
  • the third recess R3 may be disposed between the fifth and sixth through holes TH5 and TH6.
  • the first recess (R1) may be formed by arranging a virtual line having a shortest distance between the first through hole (TH1) and the second through hole (TH2), extending in a direction perpendicular to the virtual line
  • the length of the first recess R1 may be less than the width of the light emitting device 151, 152, 153 in the direction in which the first recess R1 extends.
  • the extending direction and length of the second and third recesses R2 and R3 will be described with reference to the description of the first recess R1.
  • the length B5 of each of the recesses R1, R2, and R3 in the first direction may be smaller than the width W6 of the light emitting devices 151, 152, and 153.
  • the length B5 of each of the recesses R1, R2 and R3 is smaller than the width W6 of the light emitting devices 151, 152 and 153 to reduce the light loss through the regions of the recesses R1, R2 and R3 You can give.
  • the width B6 of each of the recesses R1, R2, and R3 in the second direction may be smaller than the length B5 in the first direction.
  • the width B6 may be smaller than the gap G3 between two adjacent frames in the Y direction, for example, 70% or less of the gap G3.
  • each of the recesses R1, R2, and R3 can prevent the lowering of the rigidity of the body 115 and reduce the light loss.
  • the depths of the recesses (R1, R2, R3) will be referred to the description of the first embodiment.
  • the gap between the recesses R1, R2, and R3 disposed below the different light emitting devices 151, 152, and 153 may be smaller than the gap G1 between the light emitting devices 151, 152, and 153.
  • the first resin 160 is disposed between the body 115 and the light emitting devices 151, 152 and 153 and is in contact with the first and second bonding parts 51 and 52.
  • Each of the recesses R1, As shown in FIG. The first resin 160 will be described with reference to the first embodiment.
  • the lower surfaces of the first and second connection frame portions 133 and 138 are disposed on the same plane as the lower surfaces of the second and third frames 130 and 135 and the upper surfaces thereof are connected to the upper surfaces of the second and third frames 130 and 135 Can be placed lower.
  • the first and second connection frame portions 133 and 138 may extend in a straight line, a curved line, or an angled line.
  • the width of the first and second connection frame portions 133 and 138 may be less than the length of the first and second connection frame portions 133 and 138 and may be in the range of 120 ⁇ m or more, And may range from 150 ⁇ to 250 ⁇ .
  • the length of the first and second connection frame portions 133 and 138 may be a distance between adjacent two frame portions and may be in a range of 400 m or more, for example, 400 m to 600 m.
  • the first and / or second connection frame portions 133 and 138 may include an open region that is open in the middle, and the open region may be formed in the first and / or second connection frame portions 133 and 138 So that both ends can be physically separated.
  • the conductive portion is provided in the open region, the separated first or second connection frame portion 138 can be connected to each other and electrically disconnected if there is no conductive portion.
  • Each of the first to third light emitting devices 151, 152, and 153 may emit the same peak wavelength or emit different peak wavelengths.
  • the bonding portions 51 and 52 of each of the frames 120, 130, 135 and 140 and the light emitting devices 151 and 152 and 153 may form an intermetallic compound layer by conductive portions.
  • the second resin 164 is disposed on the first to fourth frames 120, 130, 135 and 140 around the lower portion of the light emitting devices 151, 152 and 153 and on the lower surface of the light emitting devices 151, 152, It can be brought into contact with the lower side surface.
  • the second resin 164 may be disposed lower than the lower surface of the light emitting structure 55 of the light emitting devices 151, 152 and 153 to reflect light emitted laterally from the light emitting devices 151, 152 and 153.
  • the second resin 164 may include at least one of epoxy, silicone, epoxy, and hybrid materials including a silicon-based material.
  • FIGS. 18 to 20 are views showing examples of the light emitting device package according to the third embodiment.
  • the same configuration as that described above will be referred to and selectively applied to the above-described description.
  • a light emitting device package 200 includes a plurality of frames 220, 230 and 240, a body 215, and a plurality of light emitting devices 251 and 153.
  • the package body 210A may be disposed on the body 215 having the cavity 212.
  • the first extension portion 223 of the first frame 220 and the second extension portion 243 of the third frame 240 may extend to the first side surface S1 and the second side surface S2.
  • the second frame 230 may include first and second frame parts 232 and 234 and a connection frame part 236. The configuration of the second frame 230 will be described with reference to the description of the second embodiment.
  • the conductive portion 321 may be disposed in each of the third through hole TH13 disposed in the second frame portion 234 and the fourth through hole TH14 disposed in the third frame 240.
  • Each of the frames 220, 230 and 240 and each of the bonding portions 51 and 52 may be bonded by an intermetallic compound layer.
  • each of the frames 220, 230 and 240 includes protrusions 21, 31, 32 and 41 projecting outwardly and stepped structures 225A, 232A and 245A, Can be strengthened.
  • the minimum interval T2 between the first frame 220 and the second frame 230 can prevent electrical interference due to diffusion of the solder paste when the light emitting device package is bonded on the circuit board.
  • the upper recesses 225 and 245 may be exposed to the bottom of the cavity and may have a width in the range of 50 ⁇ or more, for example, 50 to 150 ⁇ to prevent the conductive part such as paste from moving to the side of the cavity.
  • the upper and lower portions of the first and third frames 220 and 240 may have concave first and second lower recesses 225 and 245 and may extend to the bottom of the cavity.
  • the recesses R5, R6, R7 and R8 of the body 215 are formed under the first and second recesses R5 and R6 below the first light emitting device 251 and below the second light emitting device 253 Third, and fourth recesses R7 and R8.
  • the connection frame portion 236 may be disposed between the second and fourth recesses R6 and R8.
  • the distance D5 between the first and second recesses R5 and R6 and the distance between the third and fourth recesses R7 and R8 may be smaller than the width W3 of the light emitting devices 251 and 253.
  • the distance D5 may be equal to or less than the upper width W1 of the through holes TH11-TH14 and may be greater than 1/2 of the upper width W1. That is, the distance D5 may range from 50% or more to 100% of W1.
  • the description of the recesses R5, R6, R7 and R8, the through holes TH11, TH12, TH13 and TH14, the conductive portions 321 and the conductive protrusions 51A and 52A is not explained in the above description Configuration can be applied. Also, the first resin 261 and the second resin may be disposed on the bottom of the cavity.
  • Fig. 21 shows an example of a light source device or a light source module in which the light emitting device package of Fig. 20 is arranged on a circuit board.
  • the light emitting device package of another embodiment (s) can be applied to the light source module.
  • one or a plurality of light emitting device packages 200 may be disposed on the circuit board 501 of the light source module.
  • the pads 541, 542, 543 and 544 of the circuit board 501 may be connected to the frames 220, 230 and 240 of the light emitting device package 200 by a bonding layer 531.
  • Each of the pads 541, 542, 543 and 544 of the circuit board 501 may overlap the frames 220, 230 and 240 and the through holes TH11 to TH14 in the vertical direction.
  • the bonding layer 531 may be connected to the conductive parts 321 in the frames 220, 230 and 240 and / or through holes TH11 to TH14.
  • Each of the pads 541, 542, 543 and 544 of the circuit board 501 includes the first frame 220, the first frame portion 232 and the second frame portion 234 of the second frame 230, And may have a shape corresponding to the bottom shape of the frame 240, respectively.
  • the pads 542 and 543 of the circuit board 501 are heat dissipation pads and are not connected to the power terminal and are connected to the first frame part 232 and the second frame part 234 of the second frame 230, I will preach.
  • the heat dissipation pads 532 and 533 can lower the thermal resistance of the light emitting devices 251 and 253. 22 (A), Comparative Example 2 is a case where there is no heat radiation pad on the circuit board 501 disposed under the flip chip, and compared with the thermal resistance Rth0 at the thermal output end of the flip chip The thermal resistance (Rth2) at the heat conduction end of the circuit board may be higher. In Comparative Example 2, heat is concentrated in the flip chip, and the chip may be deteriorated.
  • Comparative Example 1 is a case where a horizontal chip having a light-transmitting substrate is disposed in a light emitting device package and is lower than the thermal resistance of Comparative Example 2.
  • the invention can reduce the thermal resistance at the contact end with the circuit board by conducting the heat resistance in the flip chip to the heat radiation pad of the circuit board.
  • the invention also provides heat sinks 542 and 543 of the circuit board 501 below the light emitting device of the flip chip so that the thermal resistance Rth0 of the thermal output end of the flip chip as shown in FIG.
  • the thermal resistance (Rth3) at the heat conduction end of the heat sink (501) can be further lowered.
  • the heat radiation pads 532 and 533 of the circuit board are disposed in a package to which a plurality of light emitting elements are connected, thereby providing uniform heat dissipation characteristics.
  • the low thermal resistance can reduce the junction resistance, improve the reliability of operation, reduce the luminance change due to the operation, and facilitate the mounting operation.
  • FIG. 23 to 27 show an example of a light emitting device package according to the fourth embodiment of the present invention.
  • the configuration of the fourth embodiment can be selectively applied with reference to the configurations of the first to third embodiments.
  • the light emitting device package 400 may include a body 410, metal parts 411B and 413B, and a light emitting device 420.
  • the body 410 may include a first body 415 and a second body 410A and the second body 410A may be disposed around the upper portion of the first body 415, A cavity 402 having a side surface 432 can be provided.
  • the first body 415 and the second body 410A may be coupled to each other with a coupling structure.
  • the body 410 may be formed of an insulating resin or a thermoplastic resin.
  • the body 410 has a structure in which the metal frame is removed from the upper surface or the bottom of the cavity 402, the selection of the material of the body can be broader than the structure having the metal frame. Since the body 410 is not integrally formed with the metal frame, for example, the lead frame, the thickness of the connecting portion can be provided to be thinner than the thickness of the lead frame. The body 410 which is not injected with the lead frame can easily change the design of the position of the through hole, the shape of the cavity 402, the size of the body 410, or the package size.
  • the thickness of the body 410 may be a distance from a bottom surface of the body to an upper surface of the second body, and may be 400 m or more, for example, 400 to 800 m.
  • the thickness of the body 410 may be the sum of the thickness t3 of the first body 415 and the thickness of the second body 410A and the thickness of the second body 410A may be the same as the thickness of the light emitting device 420. [ Or more.
  • the thickness t2 of the first body 415 or the thickness t2 or interval between the light emitting device 420 and the bottom surface of the body may be in the range of 400 ⁇ or less such as 80-400 ⁇ or 100-300 ⁇ Lt; / RTI > When the thickness t2 is thinner than the above range, rigidity of the body may be lowered and light loss may occur. If the thickness t2 is larger than the above range, the size of the through hole may be increased and heat dissipation efficiency may be lowered.
  • the height of the upper surface of the second body 410A may be the same as or higher than the upper surface of the light emitting device 420 for directing angle distribution of light. In another example, the second body 410A may be removed from the first body 415, in which case the package may have a light-directed angular distribution of greater than 130 degrees.
  • the body 410 may include first and second through holes TH41 and TH42 spaced from each other and the first and second through holes TH41 and TH42 may be formed on the upper surface of the first body 415 It can penetrate the lower surface.
  • the first and second through holes TH41 and TH42 may penetrate from the bottom of the cavity 402 to the lower surface of the first body 415.
  • the width or area of the upper region of the first and second through holes TH41 and TH42 may be provided to be smaller or equal to the width or area of the lower region of the first and second through holes TH41 and TH42.
  • the first and second through holes TH41 and TH42 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.
  • the inner surfaces of the first and second through holes TH41 and TH42 may be a vertical surface, or may include at least one or two or more of inclined surfaces or curved surfaces. For example, as shown in FIGS. 25 and 26, the first and second through holes TH41 and TH42 may include a sloped surface.
  • the distance between the first through hole TH41 and the second through hole TH42 in the lower surface area of the first body 415 may be 400 ⁇ to 600 ⁇ .
  • the depth of the first and the through holes TH41 and TH42 may be the same as the thickness t3 of the first body 415.
  • the depths of the first and second through holes TH41 and TH42 of the body 410 may be in the range of 400 ⁇ or less, for example, in the range of 80 to 400 ⁇ or in the range of 100 to 300 ⁇ .
  • the thickness t3 of the first body 415 may be 400 ⁇ or less, for example, 80-400 ⁇ or 100-300 ⁇ .
  • the depth of the first and second through holes TH41 and TH42 of the first body 415 may be equal to or thicker than the thickness of the first body 415.
  • the thickness of the first body 415 may be greater than the thickness of the connection portions 411 and 413, that is, the horizontal thickness of the through holes TH41 and TH42.
  • the distance between the upper surface and the lower surface of the body 410 disposed under the light emitting device 420 may be greater than the thickness of the connecting portions 411 and 413, that is, the thickness in the horizontal direction in the through hole.
  • the depths of the first and second through holes TH41 and TH42 may be greater than the thickness of the connecting portions 411 and 413.
  • connection portions 411 and 413 may extend to the upper surfaces of the first and second through holes TH41 and TH42.
  • the first metal part 411B may be disposed on the lower surface of the first body 415, the inner surface of the first through hole TH41, and the lower surface of the first bonding part 421.
  • the second metal portion 413B may be disposed on the lower surface of the first body 415, the inner surface of the second through hole TH42, and the lower surface of the second bonding portion 422.
  • the upper surfaces of the first and second through holes (TH41, TH42) may not be opened by the connecting portions (411, 413).
  • the first and second through holes TH41 and TH42 may be disposed in a region overlapping with the region of the light emitting device 420 in the vertical direction.
  • the first and second through holes TH41 and TH42 may include at least one of a top view shape, a circular shape, an ellipse shape, a polygonal shape, and an irregular shape having a straight line and a curved line.
  • the upper and lower lengths of the first and second through holes TH41 and TH42 may be provided with the same length in the first direction and the second direction or may have a longer length in either one direction.
  • the bottom lengths of the first and second through holes TH41 and TH42 may be provided with the same length in the first direction and the second direction or may be provided with a longer length in either one direction.
  • the first and second through holes TH41 and TH42 may be disposed under the first and second bonding portions 421 and 422 of the light emitting device 420, respectively.
  • the first and second through holes TH41 and TH42 may be the same or different in the upper shape and the lower shape.
  • the first and second through holes TH41 and TH42 may have a symmetrical shape or an asymmetrical shape in an upper shape and a lower shape.
  • the first and second through holes TH41 and TH42 may be disposed on the same vertical straight line with the center of the upper shape and the center of the lower shape in at least one direction of the first direction and the second direction, . For example, as shown in FIG.
  • the upper and lower shapes of the first and second through holes TH41 and TH42 may be different from each other, or the center positions of the upper and lower portions may be different from each other in the first direction.
  • the first and second through holes TH41 and TH42 may have different center positions of the upper and lower portions in the second direction.
  • the first and second through holes TH41 and TH42 are disposed under the first and second bonding portions 421 and 422 of the light emitting device 420 and the conductive portion may be disposed.
  • the light emitting device 420 may include first and second bonding portions 421 and 422 and a light emitting structure 423.
  • the light emitting device 420 may include a substrate 424.
  • the detailed configuration of the light emitting device 420 will be described with reference to the description of the embodiments disclosed above.
  • the light emitting device 420 may be disposed in the cavity 402.
  • the first and second bonding portions 421 and 422 will be described with reference to the description of the embodiment (s) disclosed above.
  • a conductive protrusion protruding toward the bottom of the body may be disposed below the first and second bonding portions 421 and 422.
  • the height or thickness of the conductive protrusion may include the description of the embodiments described above.
  • the light emitting device 420 may include one or more light emitting cells.
  • a predetermined gap may be disposed in a region between the body 410 and the light emitting device 420 and a first resin 460 may be disposed in the gap.
  • the first resin 460 may attach the light emitting device 420 to the body 410 to prevent the light emitting device 420 from flowing or tilting.
  • the lengths of the first and second through holes TH41 and TH42 in the Y direction may be equal to or larger than the width in the X direction.
  • the bottom surface area of each of the first and second bonding portions 421 and 422 may be larger than the top surface area of the first and second through holes TH41 and TH42.
  • the first and second through holes TH41 and TH42 are formed in the same direction as the direction X in which the two bonding portions 421 and 422 of the light emitting device 420 are overlapped with each other in a direction in which the two bonding portions 421 and 422 do not overlap (Y).
  • Each of the first and second through holes TH41 and TH42 may be disposed at the center of the top surface and the center of the bottom surface and may be disposed to be shifted from each other.
  • the centers of the top and bottom surfaces of the first and second through holes TH41 and TH42 may be different from each other.
  • the straight distance between the centers of the top surfaces of the two through holes TH41 and TH42 may be smaller than the straight distance between the bottom center and the bottom center.
  • the first connection portion 411 may be disposed on a surface of the first through hole TH41 and a bottom portion of the body 410.
  • the second connection part 413 may be disposed on the surface of the second through hole TH42 and a part of the bottom of the body 410.
  • the first connection portion 411 and the second connection portion 413 may be physically separated or arranged so as not to overlap in the vertical direction.
  • the first connection portion 411 may be disposed on the entire surface of the first through hole TH41 and may be provided with a hole therein.
  • the second connection portion 413 may be disposed on the entire surface of the second through hole TH42 and may be provided with a hole therein.
  • the upper ends of the first and second connection portions 411 and 413 may be exposed on the upper surfaces of the first and second through holes TH41 and TH42 and may be disposed on the same plane as the upper surface of the body 410.
  • the thickness t4 of the first and second connection portions 411 and 413 is less than half of the width of the upper portion of the first through hole TH41 or the width of the first and second directions And in this case, an inner hole can be provided.
  • the total thickness of the first connection portion 411 and the second connection portion 413 may be smaller than the top width of the first or second through hole TH41 in the first and second directions.
  • the first and second connection portions 411 and 413 may have the same thickness t4 and the thickness t4 may be in a range of 5 ⁇ ⁇ or less, for example, 2 to 5 ⁇ ⁇ . If the thickness t4 is larger than the above range, the improvement of the thermal conductivity and the improvement of the electrical conduction property are insignificant.
  • the first and second connection portions 411 and 413 may be formed on the lower surface of the body through a deposition process or a plating process.
  • the thickness t4 of the first and second connection portions 411 and 413 may be smaller than the thickness t3 between the upper surface and the lower surface of the body 410.
  • the thickness of the first and second metal portions 411B and 413B may be the thickness t4.
  • the thickness t4 may be 1/30 or less, for example, 1/30 to 1/400 or less of the thickness t3.
  • the ratio (t4: t3) of the thicknesses t4 and t3 may range from 1:30 to 1: 400.
  • the connection portions 411 and 413 may be formed on the surface of the body 410 through a deposition process or a plating process to provide a thin thickness.
  • the first connection part 411 and the second connection part 413 may be made of metal.
  • the first and second connection portions 411 and 413 may be formed of a material such as copper, titanium, nickel, gold, chromium, tantalum, platinum, (Sn), and silver (Ag), and may be formed as a single layer or a multilayer.
  • the first connection portion 411 and the second connection portion 413 may be multilayered and may include a first layer contacting the body 410 and a second layer below the first layer, May include at least one of Ti, Cr, Ta, and Pt, and the second layer may include at least one of Au, Ag, and Cu.
  • connection portions 411 and 413 can be thinned by performing a deposition process or a plating process on the surfaces of the through holes TH41 and TH42 previously provided in the body 410 using metal.
  • each of the first and second connection portions 411 and 413 may be disposed on a part of the surface of the first and second through holes TH41 and TH42.
  • the first connection portion 411 may be disposed in a region adjacent to the first side S1 of the first through hole TH41 and the body region may be exposed in another region.
  • the second connection portion 413 may be disposed in a region of the second through hole TH42 that is closer to the second side surface S2 and the body surface may be exposed to the other surface.
  • the bottom surface area of the first metal part 411B disposed on the bottom of the body 410 is equal to or less than 1/2 of the bottom surface area of the body 410, / 5 < / RTI > range.
  • the bottom surface area of the second metal part 413B may be 1/2 or less than 1/2 of the bottom surface area of the body 410, for example.
  • the first metal part 411B is formed on a part or the whole of the bottom of the body between the first through hole TH41 and the first side S1 of the body 410 with reference to the first through hole TH41 . As another example, a part of the first metal part 411B may extend to the first side surface S1 of the body 410.
  • a portion of the second metal portion 413B may extend to the second side S2 of the body 410.
  • the first metal part 411B may be exposed to a lower portion of at least one or both of the first side S1, the third and the fourth sides S3 and S4 of the body 410.
  • the second metal portion 413B may be exposed to the lower portion of at least one or both of the second side surface S1, the third and fourth side surfaces S3 and S4 of the body 410.
  • the first metal part 411B and the second metal part 413B may be disposed on a vertical plane such as at least one side surface or two or more side surfaces of the body 410.
  • the first and second metal portions 411B and 413B may extend to at least one side or two sides of the side surfaces of the body 410.
  • the inner side of the first metal part 411B may extend in the second through hole TH42 or the second side S2 with respect to the first through hole TH41.
  • the inner side of the second metal part 413B may extend in the first through hole TH41 or the first side S1 with respect to the second through hole TH42.
  • a lower surface of the body 410 may be exposed between the first and second metal portions 411B and 413B or a concave recess Sc may be provided.
  • the concave portion Sc is recessed in the top surface direction from the bottom surface of the body 410, and may be a curved surface, an angled surface, or a rough surface.
  • the concave portion Sc is a region where the first and second metal portions 411B and 413B are removed and can electrically disconnect the first and second connection portions 411 and 413.
  • the length of the concave portion Sc in the second direction Y may be equal to the length of the first and second metal portions 411B and 413B or may be equal to the length of the lower surface of the body 410 in the second direction have.
  • the concave portion Sc may be a region that is removed through a laser scribing process after a connection portion is formed at a lower portion of the body.
  • the depth of the concave portion Sc may be in the range of 1 ⁇ m or less, for example, 0.01 to 1 ⁇ m from the bottom surface of the body, or may be less than the thickness of the connecting portions 411 and 413 from the bottom surface of the body. If the depth of the concave portion Sc is larger than the above range, the rigidity between the first and second through holes TH41 and TH42 may be reduced.
  • the surface area of the first and second connection portions 411 and 413 disposed in the first and second through holes TH41 and TH42 may be smaller than the surface area of the first and second through holes TH41 and TH42.
  • the respective areas of the first and second connection portions 411 and 413 disposed in the first and second through holes TH41 and TH42 are smaller than the areas of the first and second metal portions 411B and 413B .
  • the height of the first and second connection portions 411 and 413 disposed in the first and second through holes TH41 and TH42 is greater than the height of the first and second through holes TH41 and TH42, (415).
  • the upper portions of the first and second connection portions 411 and 413 may extend to the upper surface of the first body 415 through the first and second through holes TH41 and TH42.
  • a portion of the connection portion extending to the upper surface of the body 410 may face the first and second bonding portions 421 and 422 of the light emitting device 420 under the region of the light emitting device 420.
  • the first and second connection portions 411 and 413 may be connected to the first and second bonding portions 421 and 422.
  • the first connection part 411 may be in contact with or connected to the first bonding part 421.
  • the second connection portion 413 may be in contact with or connected to the second bonding portion 422.
  • the interface between the first and second connection portions 411 and 413 and the first and second bonding portions 421 and 422 may be a metal or an intermetallic compound layer (IMC) .
  • IMC intermetallic compound layer
  • the first and second through holes TH41 and TH42 may include a conductive portion 321.
  • the conductive parts disposed in the through holes TH41 and TH42 may be disposed at the lower part of the insulating material, and in this case, the conductive part may be prevented from leaking to the lower part.
  • the conductive portion may be connected to the first connection portion 411 disposed in the first through hole TH41 and may be connected to the second connection portion 413 disposed in the second through hole TH42. Thereby minimizing electrical and thermal pathways by the conductive portions.
  • the embodiment of the present invention can prevent the conductive part from flowing or diffusing in the lower part of the body and improve the bonding property between the connecting parts 411 and 413 and the conductive parts in the through holes TH41 and TH42.
  • the diffusion of the conductive portion can be suppressed and the conductive portion has a uniform distribution and shape. Therefore, a problem of an electrical open due to uneven distribution of the conductive portion and a problem of deterioration of heat transfer efficiency can be prevented.
  • Each of the recesses R41, R42, and R43 may overlap at least part or all of the upper surface of the body 410 with the light emitting device 420 in the vertical direction.
  • the first recess R41 extends in the direction of the third side surface S3 in the region between the first and second through holes TH41 and TH42
  • the second recess R41 extends in the second recess R42 may extend in the direction between the first and second through holes TH41 and TH42 in the direction of the fourth side surface S4.
  • the recess of the body 410 may include a concave third recess R43 in an area between the first and second through holes TH41 and TH42.
  • the third recess R43 may be concave in a region between the first and second connection portions 411 and 413.
  • a portion of the first resin 460 may be disposed in the recesses R41, R42, and R43.
  • the first resin 460 disposed in the recesses R41, R42 and R43 is bonded to the lower surface of the light emitting device 420 to prevent the light emitting device 420 from tilting or flowing.
  • the first resin 460 may be in contact with the conductive parts disposed in the through holes TH41 and TH42 through the first and second bonding parts 421 and 422 and the first and second connection parts 411 and 413.
  • the depth of the recesses R41, R42 and R43 may be a predetermined depth from the upper surface of the body 410, and may be, for example, 20 mu m or more or 20 to 60 mu m. If the depths of the recesses R41, R42 and R43 are larger than the above range, the rigidity of the first body 415 may be deteriorated. If the depth is smaller than the above range, the bearing force may be insignificant. The depths of the recesses R41, R42 and R43 may be smaller than the thickness of the first body 415. [
  • the body 410 may have a recessed outer recess Ra on the upper surface on which the light emitting device 410 is disposed.
  • the outline recess Ra will be described as a fourth recess for convenience of explanation.
  • the fourth recess Ra may be disposed on at least one of the corners of the light emitting device 420.
  • the fourth recess Ra may be disposed at one, two or more of the corners of the light emitting device 420. [ That is, when the plurality of fourth recesses Ra are arranged, they may be spaced apart from each other.
  • the inner side of the fourth recess Ra may overlap the lower surface of the light emitting device 420 in the vertical direction and the outer side may be exposed to the outside of the lower surface of the light emitting device 420.
  • the inner side of the fourth recess Ra may be disposed at a distance of at least 0.1 mu m from the side surface of the light emitting device 420 to prevent the adhesive force of the light emitting device 420 from being lowered .
  • the outer side of the fourth recess Ra may be equal to or smaller than the area of the inner side.
  • the top view shape of the fourth recess Ra may be polygonal, elliptical or circular.
  • a second resin 465 may be disposed in the fourth recess Ra.
  • the second resin 465 may be adhered to the bottom surface and / or the side surface of the light emitting device 420 at the corner.
  • the second resin 465 may contact the bonding portion adjacent to the corner of the light emitting device 420 to prevent tilting or flow of the light emitting device 420.
  • the second resin (465) may be in contact with or connected to the first resin (460).
  • the second resin 465 may include a resin material such as silicon or epoxy, or may include a metal oxide or a filler therein.
  • the fourth recess Ra may be spaced apart from the first through hole TH41 by 80 mu m or more, for example, 80 to 420 mu m.
  • the fourth recess Ra may function as an identification mark or an alignment mark for identifying or aligning the direction of the electrode at any corner of the light emitting device 420.
  • the body 410, the first resin 460 and the second resin 465 may be formed of the same resin material. In this case, the first and second resins 460, Can be improved.
  • the body 410 is provided in a structure having a cavity therein, it is possible to block the moisture flowing in the cavity from the lateral direction of the body 410.
  • the minimum distance between the side surface 432 of the cavity 402 of the body 410 and the light emitting device 420 may be set in a range of 50 ⁇ m or more, for example, 50 to 200 ⁇ m. Accordingly, the distance between the inner side surface 432 of the body 410 and the light emitting device 420 can be reduced, thereby reducing optical loss.
  • the lower center of the first through-hole TH41 is disposed adjacent to the first side S1 in the direction of the center of the upper surface, and the lower center of the second through- Is disposed adjacent to the second side (S2) direction with respect to the center.
  • the inclination angles of the two inner side surfaces Sa and Sb facing each other in the first and second through holes TH41 and TH42 may be different from each other.
  • the inclination angle of the side surface Sa can be larger than the inclination angle of the second inside side surface Sb.
  • the inclination angle of the first and second inner sides Sa and Sb may be a straight line connecting the upper end and the lower end of each through hole.
  • the second inner side surface Sb of the first and second through holes TH41 and TH42 is inclined in the through holes TH41 and TH42 when the upper portion is vertical and the lower portion is inclined, May be greater than the height of the upper portion having the vertical surface.
  • the upper end of the first inner side surface Sa and the upper end of the second inner side surface Sb in the first and second through holes TH41 and TH42 may be curved or angled.
  • the light emitting device package may include the conductive protrusion disclosed in the embodiment below the light emitting device 420.
  • the conductive protrusions may be connected to the conductive parts in the first and second through holes TH41 and TH42.
  • a plurality of through holes are provided in the body, and a metal layer, which is divided into a connection portion and a metal portion, may be formed on the bottom surface of the body and the inner surface of the through hole.
  • the metal layer, which is divided into the connection part and the metal part can be deposited using a deposition equipment.
  • the first connection part 411 and the first metal part 411B and the second connection part 413 and the second metal part 413B are separated using the laser scribing device .
  • concave depressions Sc may be arranged lower than the body surface in the laser-irradiated portion.
  • the light emitting device is attached to the first and second through holes using the first resin, and is molded into the molding part 490.
  • the side of the body 410 may be cut with a package unit (unit 1) before or after the molding part is formed, and may be provided as individual packages.
  • the package in the case of providing a package having a plurality of light emitting elements, the package can be cut in units of packages each having two or more light emitting elements.
  • the package can be cut into a package having two or more light emitting elements in the first direction and / or the second direction.
  • FIG. 27 to 33 show examples of the light emitting device package according to the fifth embodiment of the present invention.
  • the configuration of the fifth embodiment can be selectively applied to the configuration of the fourth embodiment, and the description of the parts that overlap with those of the structure of FIG. 18 will be omitted.
  • the light emitting device package 700 may include a body 710, a plurality of metal parts 720, 730, and 740, and a plurality of light emitting devices 751 and 753.
  • the body 710 may include a first body 715 having a plurality of through holes and a second body 710A having a cavity 702 on the first body 715.
  • the first and second through holes TH51 and TH52 of the body 710 are disposed below the first light emitting device 751 and the third and fourth through holes TH53 and TH52 are provided below the second light emitting device 753. [ , TH54) may be disposed.
  • the through holes TH51, TH52, TH53 and TH54 will be described with reference to the description of the fourth embodiment.
  • the plurality of metal parts may be disposed separately from the lower surface of the body 710, and may include the first to third metal parts 720, 730, and 740.
  • the second metal part 730 may be disposed between the first and third metal parts 720 and 740 and may connect the adjacent first and second light emitting devices 751 and 753 in series.
  • three or more light emitting devices may be connected in series.
  • a plurality of light emitting devices may be connected in parallel.
  • the second metal part 730 includes a first extension part 732 disposed under the first light emitting device 751 on the lower surface of the body 710, a second extension part 732 disposed below the second light emitting element 753, And an intermediate connection part 736 for connecting the first and second extension parts 732 and 734 to each other.
  • the first metal part 720 may include a first connection part 721 disposed on the surface of the first through hole TH51.
  • the second metal part 730 may include second and third connection parts 731 and 733 disposed on the surfaces of the second and third through holes TH52 and TH53.
  • the second and third connection portions 731 and 733 may be connected to the intermediate connection portion 736 through the first and second extension portions 732 and 734, respectively.
  • the third metal part 740 may include a fourth connection part 741 disposed on the surface of the fourth through hole TH54.
  • the second metal part 740 and the fourth connection part 741 may be connected to each other.
  • the first bonding portion 51 of the first light emitting device 751 is connected to the first connection portion 721 of the first metal portion 720 on the first through hole TH51, May be connected to the second connection portion 731 of the second metal portion 730 on the second through hole TH52.
  • the first bonding portion 51 of the second light emitting device 753 is connected to the third connection portion 723 of the second metal portion 723 on the third through hole TH53, May be connected to the fourth connection part 741 of the third metal part 740 on the fourth through hole TH54.
  • the first resin 712 may be disposed on the upper surfaces of the light emitting devices 751 and 753 and the first body 715 and a plurality of recesses R61, R62, R63, and R64. Referring to the description of the embodiments disclosed hereinabove .
  • the outer recesses and the second resin as in the fourth embodiment are disposed at the outer corners of the light emitting elements 751 and 753 to prevent the tilting and the flow of the light emitting elements 751 and 753.
  • the molding part 790 may be disposed on the cavity 702 or the light emitting devices 751 and 753.
  • the lower surface of the body of the area between the first, second and third metal parts 720, 730 and 740 may be provided with a concave part Sc so as to separate the metal parts from each other.
  • the conductive protrusions 51A and 52A are disposed on the bonding portions 51 and 52 of the light emitting devices 751 and 753 or the bonding protrusions 51A and 52B of the light emitting devices 751 and 753 51, 52 without a conductive protrusion.
  • the conductive protrusions 51A and 52A may extend to the bottom surface of the body or may extend to the bottom surface of the metal portion in the bonding portions 51 and 52 of the respective light emitting devices 751 and 753 in the respective through holes.
  • the conductive parts disposed in the through holes may connect the conductive protrusions 51A and 52A, the bonding parts 51 and 52, and the connection parts. This configuration will be described with reference to FIG.
  • each of the through holes may be provided without a conductive part.
  • the light emitting device package according to the embodiment can be applied to a light source device.
  • the light source device may include a display device, a pointing device, a lighting device, various vehicle lamps, and the like depending on an industrial field.
  • the light source device may be disposed in various display devices or may be disposed in various light units.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light-emitting element package provided by an embodiment comprises: a first frame having a first through-hole; a second frame having a second through-hole; a body disposed between the first and second frames; and a light-emitting element disposed on each of the first and second frames, wherein each of the first and second through-holes has a lower surface larger in area than an upper surface, the first through-hole has upper and lower surfaces, the centers of which may not be aligned with each other in the vertical direction, and the second through-hole has upper and lower surfaces, the centers of which may be not be aligned with each other in the vertical direction.

Description

발광소자 패키지 및 광원 장치Light emitting device package and light source device
발명의 실시 예는 발광소자 패키지 및 광원 장치에 관한 것이다.An embodiment of the invention relates to a light emitting device package and a light source device.
3족-5족 또는 2족-6족 화합물 반도체 물질을 이용한 발광 다이오드(Light Emitting Diode)나 레이저 다이오드(Laser Diode)와 같은 발광소자는 박막 성장 기술 및 소자 재료의 개발로 적색, 녹색, 청색 및 자외선 등 다양한 파장 대역의 빛을 구현할 수 있는 장점이 있다. 고 출력을 제공할 수 있는 발광소자가 요청됨에 따라 고 전원을 인가하여 출력을 높일 수 있는 소자에 대한 연구가 진행되고 있다. 또한, 발광 소자의 광 추출 효율을 향상시키고, 패키지 단에서의 광도를 향상시킬 수 있는 방안에 대한 연구가 진행되고 있다. 또한, 발광소자패키지의 전극과 발광소자 간의 본딩 결합력을 향상시킬 수 있는 방안에 대한 연구가 진행되고 있다.Emitting devices such as light emitting diodes and laser diodes using semiconductor materials of group 3 to 5 or group 2 to group 6 are used for the light emitting devices such as red, Ultraviolet rays and the like can be realized. As a light emitting device capable of providing a high output is required, studies have been made on a device capable of increasing output by applying a high power. Further, studies are being made to improve the light extraction efficiency of the light emitting device and improve the light intensity at the package end. Further, studies are being made on a method for improving bonding strength between an electrode of a light emitting device package and a light emitting device.
발명의 실시 예는 발광소자 아래에서 프레임의 관통홀의 상면 중심과 하면 중심이 서로 어긋나게 배치되는 발광소자 패키지를 제공할 수 있다. 발명의 실시 예는 프레임의 관통홀 또는 관통홀의 하부 형상이 적어도 한 방향으로 비대칭 형상을 포함하는 발광소자 패키지를 제공할 수 있다. 발명의 실시 예는 프레임의 관통홀에 도전부 및 발광소자의 도전돌기 중 적어도 하나 또는 모두가 배치된 발광소자 패키지를 제공할 수 있다. 발명의 실시 예는 프레임들 사이에 배치된 몸체의 리세스에 제1수지를 배치하고 발광소자를 접착시킨 발광소자 패키지를 제공할 수 있다. 발명의 실시 예는 프레임들 상에 배치된 복수의 발광소자가 관통홀 내에 배치된 도전부를 통해 연결되는 발광소자 패키지를 제공할 수 있다.According to an embodiment of the present invention, a light emitting device package can be provided in which the center of the upper surface and the center of the lower surface of the through hole of the frame are arranged to be shifted from each other below the light emitting device. Embodiments of the present invention can provide a light emitting device package in which a through hole of a frame or a lower shape of the through hole includes an asymmetric shape in at least one direction. Embodiments of the present invention can provide a light emitting device package in which at least one or both of a conductive portion and a conductive protrusion of a light emitting element are disposed in a through hole of a frame. An embodiment of the present invention can provide a light emitting device package in which a first resin is disposed in a recess of a body disposed between frames and a light emitting element is bonded. Embodiments of the present invention can provide a light emitting device package in which a plurality of light emitting elements disposed on frames are connected through conductive parts disposed in through holes.
발명의 실시 예는 몸체의 관통홀에 금속 연결부를 배치하여 발광소자를 연결한 발광소자 패키지를 제공한다. 발명의 실시 예는 몸체 하부에 배치된 금속 연결부를 몸체의 관통홀로 연장시켜 복수의 발광소자를 연결하는 발광소자 패키지를 제공한다. 발명의 실시 예는 복수의 발광소자를 직렬 또는 병렬로 연결되는 발광소자 패키지를 제공한다.An embodiment of the present invention provides a light emitting device package in which a light emitting element is connected by disposing a metal connection portion in a through hole of a body. An embodiment of the present invention provides a light emitting device package that connects a plurality of light emitting devices by extending a metal connection portion disposed at a lower portion of a body to a through hole of a body. Embodiments of the present invention provide a light emitting device package in which a plurality of light emitting devices are connected in series or in parallel.
발명의 실시 예에 따른 발광소자 패키지는 제1관통홀을 갖는 제1프레임; 제2관통홀을 갖는 제2프레임; 상기 제1 및 제2프레임 사이에 배치된 몸체; 상기 제1 및 제2프레임 상에 배치된 발광소자를 포함하고, 상기 제1 및 제2관통홀은 하면의 면적이 상면의 면적보다 크며, 상기 제1관통홀의 상면의 중심과 하면의 중심은 수직 방향으로 서로 어긋나며, 상기 제2관통홀의 상면의 중심과 하면의 중심은 수직 방향으로 서로 어긋나게 배치될 수 있다. A light emitting device package according to an embodiment of the present invention includes a first frame having a first through hole; A second frame having a second through hole; A body disposed between the first and second frames; Wherein the first and second through holes are larger in area than the upper surface, and the center of the upper surface of the first through hole and the center of the lower surface are perpendicular And the center of the upper surface of the second through hole and the center of the lower surface of the second through hole may be offset from each other in the vertical direction.
발명의 실시 예에 따른 발광소자 패키지는 복수의 프레임; 상기 복수의 프레임 각각에 배치된 복수의 관통홀; 상기 복수의 프레임 사이에 배치된 몸체; 상기 복수의 프레임과 상기 몸체 상에 배치된 발광소자; 및 상기 복수의 프레임의 상면, 상기 몸체의 상면 및 상기 관통홀에 배치된 수지를 포함하며, 상기 발광소자는 하부에 상기 복수의 관통홀 각각으로 관통되는 복수의 도전돌기를 포함하며, 상기 복수의 도전돌기는 상기 복수의 프레임의 바닥에 노출되며, 상기 복수의 도전돌기는 금속 재질의 기둥 형상을 가지며, 상기 복수의 도전돌기는 상기 프레임의 두께 이상의 높이를 가지며, 상기 복수의 관통홀 각각은 상면의 중심과 하면의 중심은 수직 방향으로 서로 어긋나게 배치될 수 있다. A light emitting device package according to an embodiment of the present invention includes a plurality of frames; A plurality of through holes arranged in each of the plurality of frames; A body disposed between the plurality of frames; A plurality of frames and a light emitting element disposed on the body; And a resin disposed on the upper surface of the plurality of frames, the upper surface of the body, and the through holes, wherein the light emitting element includes a plurality of conductive protrusions penetrating through the plurality of through holes at a lower portion thereof, The plurality of conductive protrusions have a height equal to or greater than the thickness of the frame, and each of the plurality of conductive protrusions has a shape of a pillar shape of a metal material, The center of the center and the center of the lower face may be offset from each other in the vertical direction.
발명의 실시 예에 의하면, 상기 제1관통홀의 하면의 폭은 제1방향으로 상기 제1관통홀의 상면의 폭보다 넓으며, 상기 제2관통홀의 하면의 폭은 제1방향으로 상기 제2관통홀의 상면의 폭보다 넓을 수 있다. 상기 제1관통홀의 하면의 폭은 제2방향으로 상기 제1관통홀의 상면의 폭보다 넓으며, 상기 제2관통홀의 하면의 폭은 제2방향으로 상기 제2관통홀의 상면의 폭보다 넓을 수 있다. 상기 발광소자는 제1방향의 길이가 제2방향의 길이보다 길 수 있다. 발명의 실시 예에 의하면, 상기 제 1 및 제2관통홀의 하면의 중심은 상기 제1 및 제2관통홀의 상면의 중심보다 상기 몸체로부터 더 이격될 수 있다. 상기 제1관통홀의 하면의 중심은 상기 제1관통홀의 상면의 중심을 기준으로 상기 제2프레임으로부터 멀어지는 방향으로 이격되며, 상기 제2관통홀의 하면의 중심은 상기 제2관통홀의 상면의 중심을 기준으로 상기 제1프레임으로부터 멀어지는 방향으로 이격될 수 있다. According to an embodiment of the present invention, the width of the lower surface of the first through hole is wider than the width of the upper surface of the first through hole in the first direction, and the width of the lower surface of the second through hole is larger than the width of the second through hole And may be wider than the width of the upper surface. The width of the lower surface of the first through hole is wider than the width of the upper surface of the first through hole in the second direction and the width of the lower surface of the second through hole is wider than the width of the upper surface of the second through hole in the second direction . The length of the light emitting device in the first direction may be longer than the length of the second direction. According to an embodiment of the present invention, the centers of the lower surfaces of the first and second through holes may be further spaced from the body than the center of the upper surface of the first and second through holes. Wherein the center of the lower surface of the first through hole is spaced away from the second frame with respect to the center of the upper surface of the first through hole and the center of the lower surface of the second through hole is spaced apart from the center of the upper surface of the second through hole In a direction away from the first frame.
발명의 실시 예에 의하면, 상기 몸체는 상부에 적어도 하나의 리세스 및 상기 리세스에 제1수지가 배치될 수 있다. 상기 제1 및 제2관통홀에 도전부가 배치될 수 있다. 상기 발광소자는 상기 제1 및 제2관통홀에 배치된 도전돌기를 포함하며, 상기 도전돌기는 상기 도전부와 접촉될 수 있다. 발명의 실시 예에 의하면, 상기 발광소자의 하부 둘레에 제2수지가 배치될 수 있다. 상기 제1 및 제2관통홀에 제3수지 또는 도전부가 배치되며, 상기 발광소자는 상기 제1 및 제2관통홀에 배치된 도전돌기를 포함할 수 있다. 상기 도전돌기는 상기 제1 및 제2관통홀을 통해 상기 프레임의 하면에 노출될 수 있다. 상기 도전돌기는 상기 제1 및 제2프레임의 두께보다 큰 두께를 가질 수 있다. 상기 리세스는 상기 발광소자와 수직 방향으로 중첩될 수 있다. 상기 리세스는 상기 발광소자와 수직 방향으로 중첩되는 내측부와, 상기 발광소자로부터 외측 방향으로 연장된 외측부를 가질 수 있다. 발명의 실시 예에 의하면, 상기 리세스는 복수로 배치되며, 상기 리세스의 깊이는 상기 관통홀의 깊이보다 작을 수 있다. 상기 제1 또는 제2프레임으로부터 이격된 제3프레임을 포함하며, 상기 발광소자는 복수개가 상기 제1 내지 제3프레임에 배치되며, 서로 직렬로 연결될 수 있다. According to an embodiment of the invention, the body may have at least one recess on the top and a first resin on the recess. The conductive portions may be disposed in the first and second through holes. The light emitting device may include a conductive protrusion disposed in the first and second through holes, and the conductive protrusion may be in contact with the conductive portion. According to an embodiment of the present invention, a second resin may be disposed around the lower portion of the light emitting device. A third resin or conductive portion may be disposed in the first and second through holes, and the light emitting element may include a conductive protrusion disposed in the first and second through holes. The conductive protrusions may be exposed to the lower surface of the frame through the first and second through holes. The conductive protrusion may have a thickness greater than the thickness of the first and second frames. The recess may be overlapped with the light emitting element in a vertical direction. The recess may have an inner portion overlapping with the light emitting element in the vertical direction, and an outer portion extending outward from the light emitting element. According to an embodiment of the present invention, the recesses are arranged in a plurality, and the depth of the recesses may be smaller than the depth of the through-holes. And a third frame spaced from the first or second frame, wherein a plurality of the light emitting devices are disposed in the first to third frames, and may be connected in series with each other.
실시 예에 따른 광원 장치는, 회로 기판; 및 상기 회로 기판에 하나 또는 복수의 발광소자 패키지가 배치될 수 있다.A light source apparatus according to an embodiment includes: a circuit board; And one or a plurality of light emitting device packages may be disposed on the circuit board.
발명에 의하면, 발광소자의 본딩부들과 대면하는 프레임의 관통홀에 도전부를 제공하여, 상기 본딩부의 접착력 및 전기 전도성을 개선시켜 줄 수 있다. 발명에 의하면, 발광소자의 본딩부 하부에 돌출된 기둥 형상의 도전돌기를 프레임의 관통홀에 배치하여, 플립 칩의 본딩부의 접착력 및 전기 전도성을 개선시켜 줄 수 있다. 발명에 의하면, 프레임의 관통홀에 발광소자의 본딩부 하부에 돌출된 기둥 형상의 도전돌기와 수지를 배치하여, 플립 칩의 도전돌기의 접착력 및 전기 전도성을 개선시켜 줄 수 있다.According to the present invention, it is possible to improve the adhesive force and the electric conductivity of the bonding portion by providing the conductive portion in the through hole of the frame facing the bonding portions of the light emitting device. According to the present invention, it is possible to improve the adhesive force and electrical conductivity of the bonded portion of the flip chip by arranging a columnar conductive protrusion protruding from the lower portion of the bonding portion of the light emitting element in the through hole of the frame. According to the invention, it is possible to improve the adhesive force and electrical conductivity of the conductive protrusions of the flip chip by arranging columnar conductive protrusions and resin protruding from the lower portion of the bonding portion of the light emitting element in the through holes of the frame.
발명에 의하면, 발광소자의 본딩부들과 대면하는 프레임의 관통홀이 하부 형상이 비 대칭 형상으로 제공되어, 본딩부의 접착력 및 전기 전도성을 개선시켜 줄 수 있다. 발명에 의하면, 발광소자와 몸체 사이에 접착을 위한 제1수지를 배치하여 발광소자의 접착력 및 지지력을 개선시켜 줄 수 있다. 발명에 의하면, 발광소자와 대면하는 몸체의 리세스에 제1수지를 배치하여, 발광소자의 접착력 및 지지력을 개선시켜 줄 수 있다. 실시 예에 의하면, 복수의 발광소자 내에 하나 또는 복수의 발광 셀을 배치하여, 고 전압 패키지를 제공할 수 있다. 실시 예에 의하면, 복수의 발광소자를 직렬로 연결하여 고 전압 패키지를 제공할 수 있다. 실시 예에 의하면, 복수의 발광소자를 프레임 또는 도전부를 선택적으로 연결하여, 패키지의 구동 전압의 전환이 가능할 수 있다. According to the present invention, the through holes of the frame facing the bonding parts of the light emitting device are provided in an asymmetrical shape in the lower part, so that the adhesive force and the electric conductivity of the bonding part can be improved. According to the present invention, a first resin for bonding between the light emitting element and the body can be disposed to improve the adhesive force and the supporting force of the light emitting element. According to the present invention, the first resin can be disposed in the recess of the body facing the light emitting element to improve the adhesive force and the supporting force of the light emitting element. According to the embodiment, one or a plurality of light emitting cells can be arranged in a plurality of light emitting elements to provide a high voltage package. According to the embodiment, a plurality of light emitting devices can be connected in series to provide a high voltage package. According to the embodiment, it is possible to switch the driving voltage of the package by selectively connecting the plurality of light emitting elements to the frame or the conductive portion.
실시 예에 의하면, 광 추출 효율 및 전기적 특성과 신뢰성을 향상시킬 수 있다. 실시 예에 의하면, 패키지의 공정 효율을 향상시키고 제조 단가를 줄이고 제조 수율을 향상시킬 수 있다. 실시 예의 패키지는 반사율이 높은 몸체를 제공함으로써, 몸체의 변색을 억제하여 신뢰성을 개선할 수 있다. 실시 예에 의하면, 발광소자 패키지가 기판 등에 재 본딩되는 과정에서 리멜팅(re-melting) 현상이 발생되는 것을 방지할 수 있다.According to the embodiment, the light extraction efficiency, electrical characteristics and reliability can be improved. According to the embodiment, the process efficiency of the package can be improved, the manufacturing cost can be reduced, and the manufacturing yield can be improved. The package of the embodiment provides a body having a high reflectance, so that discoloration of the body can be suppressed and reliability can be improved. According to the embodiment, it is possible to prevent the re-melting phenomenon from occurring in the process of re-bonding the light emitting device package to a substrate or the like.
도 1은 발명의 제1실시 예에 따른 발광소자 패키지의 평면도이다.1 is a plan view of a light emitting device package according to a first embodiment of the present invention.
도 2는 도 1의 발광소자 패키지의 저면도이다.2 is a bottom view of the light emitting device package of Fig.
도 3은 도 1의 발광소자 패키지의 G-G측 단면도의 예이다.3 is a cross-sectional view taken along the line G-G of the light emitting device package of Fig.
도 4는 도 3의 발광소자 패키지에서 발광소자의 일부가 관통홀에 삽입된 예를 나타낸 도면이다.4 is a view illustrating an example in which a part of a light emitting device is inserted into a through hole in the light emitting device package of FIG.
도 5는 실시 예에 따른 프레임의 관통홀의 상세 구조를 나타낸 도면이다.5 is a view showing a detailed structure of a through hole of a frame according to an embodiment.
도 6은 실시 예에 따른 프레임의 저면에서 관통홀의 형상을 나타낸 도면이다.6 is a view showing the shape of the through hole in the bottom surface of the frame according to the embodiment.
도 7 및 도 8은 도 6의 관통홀의 다른 예를 나타낸 도면이다.Figs. 7 and 8 are views showing another example of the through-hole of Fig. 6. Fig.
도 9는 도 5에서 다층 구조의 프레임 내의 관통홀에 배치된 상세 구조를 설명한 도면이다.Fig. 9 is a view for explaining the detailed structure disposed in the through hole in the frame of the multi-layer structure in Fig. 5;
도 10은 발명의 비교 예로서, (a)는 프레임에 대칭형 관통홀이 형성된 경우와, (b)는 프레임에 대칭형 관통홀에 발광소자의 도전돌기가 결합될 때의 예를 설명한 도면이다.Fig. 10 is a comparative example of the invention, wherein (a) shows a case where a symmetrical through hole is formed in a frame, and (b) is an explanatory view of an example when a conductive protrusion of a light emitting element is coupled to a symmetrical through hole in a frame.
도 11 및 도 12는 발명의 실시 예에 따른 프레임의 관통홀의 다른 형태를 나타낸 도면이다.11 and 12 are views showing another form of the through hole of the frame according to the embodiment of the present invention.
도 13은 발명의 제2실시 예에 따른 발광소자 패키지의 평면도이다.13 is a plan view of a light emitting device package according to a second embodiment of the present invention.
도 14는 도 13의 발광소자 패키지의 A-A'측 단면도이다.14 is a cross-sectional view along the line A-A 'of the light emitting device package of Fig.
도 15는 도 13의 발광소자 패키지의 C-C'측 단면도이다.15 is a cross-sectional view taken along the line C-C 'of the light emitting device package of FIG.
도 16은 도 15의 발광소자 패키지의 변형 예이다.16 is a modification of the light emitting device package of Fig.
도 17은 도 19의 발광소자 패키지에 배치된 프레임의 관통홀, 몸체의 리세스와 발광소자의 본딩부 관계를 설명하기 위한 도면이다.FIG. 17 is a view for explaining the relationship between the through hole of the frame disposed in the light emitting device package of FIG. 19, the recess of the body, and the bonding portion of the light emitting device.
도 18은 제3실시 예에 따른 발광소자 패키지의 평면도이다.18 is a plan view of a light emitting device package according to the third embodiment.
도 19의 (a)(b)는 도 18의 발광소자 패키지의 프레임의 정면도 및 배면도이다.19 (a) and 19 (b) are a front view and a rear view of the frame of the light emitting device package of FIG. 18;
도 20은 도 18의 발광소자 패키지에서 제2프레임의 연결 프레임부를 경유한 측 단면도이다. 20 is a side cross-sectional view of the light emitting device package of FIG. 18 through the connection frame portion of the second frame.
도 21은 도 20의 발광소자 패키지를 갖는 광원 장치의 예이다.21 is an example of a light source device having the light emitting device package of Fig.
도 22의 (A)(B)는 도 21의 설명에 있어서, 비교 예1,2와 실시예에서의 발광소자 패키지 내에서의 열 저항을 나타낸 그래프이다. 22A and 22B are graphs showing the thermal resistance in the light emitting device package in the comparative examples 1 and 2 and the embodiment in the description of FIG.
도 23은 발명의 제4실시 예에 따른 발광소자 패키지의 평면도이다.23 is a plan view of a light emitting device package according to a fourth embodiment of the present invention.
도 24는 도 23의 발광소자 패키지에서 저면도이다.24 is a bottom view of the light emitting device package of Fig.
도 25는 도 23의 발광소자 패키지의 C1-C1측 단면도이다.25 is a cross-sectional view of the light emitting device package of Fig. 23 on the C1-C1 side.
도 26은 도 23의 발광소자 패키지의 C1-C1측 단면도의 다른 예이다.26 is another example of a sectional view taken on the C1-C1 side of the light emitting device package of Fig.
도 27은 발명의 제5실시 예에 따른 발광소자 패키지의 평면도이다.27 is a plan view of a light emitting device package according to a fifth embodiment of the present invention.
도 28은 도 27의 발광소자 패키지의 저면도이다.28 is a bottom view of the light emitting device package of Fig.
도 29는 도 27의 발광소자 패키지의 D1-D1측 단면도이다.29 is a sectional view taken along the line D1-D1 of the light emitting device package of Fig.
도 30은 도 27의 발광소자 패키지의 E1-E1측 단면도이다.30 is a cross-sectional view of the light emitting device package of Fig. 27 on the E1-E1 side.
도 31은 도 30의 발광소자 패키지의 관통홀에 도전부를 배치한 예이다.31 is an example in which a conductive portion is arranged in a through hole of the light emitting device package of Fig.
도 32는 도 30의 발광소자 패키지에서 발광소자의 다른 예이다.32 is another example of the light emitting device in the light emitting device package of Fig.
도 33은 도 30의 발광소자 패키지에서 발광소자의 다른 예이다.33 is another example of the light emitting device in the light emitting device package of Fig.
이하 실시 예를 첨부된 도면을 참조하여 설명한다. 발명의 기술 사상은 설명되는 일부 실시 예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있고, 본 발명의 기술 사상 범위 내에서라면, 실시 예들간 그 구성 요소들 중 하나 이상을 선택적으로 결합, 치환하여 사용할 수 있다. 또한, 발명의 실시 예에서 사용되는 용어(기술 및 과학적 용어를 포함)는, 명백하게 특별히 정의되어 기술되지 않는 한, 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 일반적으로 이해될 수 있는 의미로 해석될 수 있으며, 사전에 정의된 용어와 같이 일반적으로 사용되는 용어들은 관련 기술의 문맥상의 의미를 고려하여 그 의미를 해석할 수 있을 것이다. 또한, 발명의 실시예에서 사용된 용어는 실시예들을 설명하기 위한 것이며 본 발명을 제한하고자 하는 것은 아니다. 명세서에서, 단수형은 문구에서 특별히 언급하지 않는 한 복수형도 포함할 수 있고, "A 및(와) B, C중 적어도 하나(또는 한 개 이상)"로 기재되는 경우 A, B, C로 조합할 수 있는 모든 조합 중 하나이상을 포함 할 수 있다. 또한, 본 발명의 실시 예의 구성 요소를 설명하는 데 있어서, 제1, 제2, A, B, (a), (b) 등의 용어를 사용할 수 있다. 이러한 용어는 그 구성 요소를 다른 구성 요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성 요소의 본질이나 차례 또는 순서 등으로 확정되지 않는다. 그리고, 어떤 구성 요소가 다른 구성요소에 '연결', '결합' 또는 '접속'된다고 기재된 경우, 그 구성 요소는 그 다른 구성요소에 직접적으로 연결, 결합 또는 접속되는 경우뿐만 아니라, 그 구성 요소와 그 다른 구성요소 사이에 있는 또 다른 구성 요소로 인해 '연결', '결합' 또는 '접속'되는 경우도 포함할 수 있다. 또한, 각 구성 요소의 '상(위) 또는 하(아래)'에 형성 또는 배치되는 것으로 기재되는 경우, 상(위) 또는 하(아래)는 두 개의 구성 요소들이 서로 직접 접촉되는 경우뿐만 아니라 하나 이상의 또 다른 구성 요소가 두 개의 구성 요소들 사이에 형성 또는 배치되는 경우도 포함한다. 또한 '상(위) 또는 하(아래)'으로 표현되는 경우 하나의 구성 요소를 기준으로 위쪽 방향뿐만 아니라 아래쪽 방향의 의미도 포함할 수 있다.Hereinafter, embodiments will be described with reference to the accompanying drawings. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Can be substituted. It is also to be understood that the terms (including technical and scientific terms) used in the embodiments of the invention have the same meanings as commonly understood by one of ordinary skill in the art to which the invention belongs And commonly used terms, such as predefined terms, may be construed in light of the contextual meanings of the related art. In addition, the terms used in the embodiments of the present invention are intended to illustrate the embodiments and are not intended to limit the present invention. In the specification, the singular forms may include plural forms unless otherwise specified in the text, and may be combined into A, B, and C when they are described as "A and / or at least one (or more than one) Or < / RTI > all possible combinations. In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the components from other components, and are not defined by the terms in their essence, order or sequence. In addition, when an element is described as being 'connected', 'coupled' or 'connected' to another element, the element is not only directly connected to, coupled to, or connected to the other element, Or " connected " due to another component between the other components. In addition, when it is described as being formed or disposed on the upper or lower side of each component, the upper (upper) or lower (lower) is not only the case where the two components are in direct contact with each other, But also includes the case where another component is formed or disposed between two components. Also, in the case of "upper (upper) or lower (lower)", it may include not only an upward direction but also a downward direction based on one component.
<제1실시예>&Lt; Embodiment 1 >
도 1 내지 도 9는 발명의 제1실시 예에 대한 도면의 예이다. 도 1 내지 도 9를 참조하면, 발광소자 패키지(300)는 패키지 몸체(310) 및 발광소자(350)를 포함할 수 있다. 상기 패키지 몸체(310)는 몸체(313)와 프레임(311,312)을 포함할 수 있다. 상기 프레임(311,312)은 이격된 제1 프레임(311)과 제2 프레임(312)을 포함할 수 있으며, 상기 몸체(313)는 상기 제1 프레임(311)과 상기 제2 프레임(312) 사이에 배치될 수 있다. 상기 몸체(313)는 상기 제1 프레임(311) 및 상기 제2 프레임(312) 위에 더 배치될 수 있다. 상기 몸체(313)는 상부가 개방된 캐비티(302)에 경사진 내측면을 제공할 수 있으며, 상기 캐비티(302)는 상기 제1 프레임(311)과 상기 제2 프레임(312)의 상면을 노출시켜 줄 수 있다. 상기 캐비티(302)의 내측면은 1단 이상 또는 2단 이상의 스텝 구조로 배치될 수 있다. 상기 패키지 몸체(310)는 캐비티(302)가 있는 구조로 제공되거나, 캐비티 없이 상면이 평탄한 구조로 제공될 수 있다. 상기 몸체(313) 상에는 캐비티(302)를 갖는 상부 몸체(310A)가 배치될 수 있다. 상기 상부 몸체(310A)는 상기 몸체(313)과 동일한 재질이거나 별도의 재질로 배치될 수 있다. 예로서, 상기 몸체(313)는 PPA(Polyphthalamide), PCT(Polychloro Tri phenyl), LCP(Liquid Crystal Polymer), PA9T(Polyamide9T), 실리콘, 에폭시, EMC(Epoxy molding compound), SMC(Silicon molding compound), 세라믹, PSG(photo sensitive glass), 사파이어(Al2O3) 중에서 선택된 적어도 하나로 형성될 수 있다. 상기 몸체(313)는 수지 내부에 TiO2와 SiO2와 같은 고굴절 필러를 포함할 수 있다. 상기 상부 몸체(310A)는 수지 또는 절연 재질이거나, 반사 몸체로 기능할 수 있다. 상기 패키지 몸체(310)의 제1방향(X)의 길이는 제2방향(Y)의 길이 이상일 수 있다. 패키지 몸체(310) 또는 몸체(313)에서 제1 및 제2측면(S1,S2)은 제2방향으로 연장되며 서로 반대측 면일 수 있으며, 제3 및 4측면(S3,S4)은 제1방향으로 연장되며 서로 반대측 면일 수 있다. 상기 제1내지 제4측면(S1,S2,S3,S4)은 수직하거나 경사지게 배치될 수 있으며, 몸체(313)의 외 측면일 수 있다.Figs. 1 to 9 are examples of drawings of a first embodiment of the invention. 1 to 9, the light emitting device package 300 may include a package body 310 and a light emitting device 350. The package body 310 may include a body 313 and a frame 311 and 312. The frame 311 and 312 may include a first frame 311 and a second frame 312 spaced apart from each other and the body 313 may be disposed between the first frame 311 and the second frame 312 . The body 313 may be further disposed on the first frame 311 and the second frame 312. The body 313 may provide an inclined inner surface to the upper opened cavity 302 and the cavity 302 may expose the upper surface of the first frame 311 and the upper surface of the second frame 312 . The inner side surface of the cavity 302 may be arranged in a stepped structure or a stepped structure. The package body 310 may be provided with a structure having the cavity 302 or may be provided with a flat structure without a cavity. An upper body 310A having a cavity 302 may be disposed on the body 313. The upper body 310A may be made of the same material as the body 313 or may be a separate material. For example, the body 313 may be formed of a material such as PPA (Polyphthalamide), PCT (Polychloro Tri phenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy, epoxy molding compound, , Ceramics, photo sensitive glass (PSG), and sapphire (Al 2 O 3 ). The body 313 may include a high refractive index filler such as TiO 2 and SiO 2 in the resin. The upper body 310A may be made of resin or an insulating material, or may function as a reflecting body. The length of the package body 310 in the first direction X may be greater than or equal to the length of the second direction Y. [ The first and second sides S1 and S2 of the package body 310 or the body 313 may extend in the second direction and may be opposite sides and the third and fourth sides S3 and S4 may extend in the first direction And may be opposite to each other. The first to fourth side surfaces S1, S2, S3, and S4 may be arranged vertically or inclinedly and may be the outer surface of the body 313.
상기 제1 프레임(311)과 상기 제2 프레임(312)은 도전성 또는 금속 프레임으로 제공될 수 있다. 상기 금속 프레임은 예컨대, 구리(Cu), 티타늄(Ti), 니켈(Ni), 금(Au), 크롬(Cr), 탄탈늄(Ta), 백금(Pt), 주석(Sn), 은(Ag) 중에서 선택될 수 있으며, 단층 또는 다층으로 형성될 수 있다. 상기 제1 프레임(311)의 제1연장부(317)는 제1측면(S1) 방향으로 연장되거나 돌출될 수 있다. 상기 제2 프레임(312)의 제2연장부(318)는 제2측면(S2) 방향으로 연장되거나 돌출될 수 있다. 상기 제1 및 제2연장부(317,318) 각각은 하나 또는 복수로 배치될 수 있다. 다른 예로서, 상기 제1 프레임(311)과 상기 제2 프레임(312)은 절연성 프레임으로 제공될 수 있다. The first frame 311 and the second frame 312 may be provided as a conductive or metal frame. The metal frame may be made of, for example, copper, titanium, nickel, gold, chromium, tantalum, platinum, tin, ), And may be formed as a single layer or multiple layers. The first extension 317 of the first frame 311 may extend or protrude in the direction of the first side S1. The second extension 318 of the second frame 312 may extend or protrude in the direction of the second side S2. Each of the first and second extension portions 317 and 318 may be disposed in one or more than one. As another example, the first frame 311 and the second frame 312 may be provided as an insulating frame.
상기 발광소자(350)는 제1 및 제2 본딩부(351,352) 및 발광 구조물(353)을 포함할 수 있다. 상기 발광소자(350)는 투광성 재질의 기판(354)을 포함할 수 있다. 상기 발광소자(350)에서 제1방향의 길이는 제2방향의 길이 이상일 수 있다. 상기 발광 구조물(353)은 화합물 반도체로 제공될 수 있으며, 제1 및 제2도전형 반도체층, 상기 제1 및 제2 도전형 반도체층 사이에 활성층을 포함할 수 있다. 상기 제1 본딩부(351)는 상기 제1 도전형 반도체층과 전기적으로 연결될 수 있다. 상기 제2 본딩부(352)는 상기 제2 도전형 반도체층과 전기적으로 연결될 수 있다. 상기 활성층은 예로서 3족-5족 또는 2족-6족의 화합물 반도체 중에서 적어도 하나로 구현될 수 있다. 상기 기판(354)는 사파이어 기판(Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge 중에서 선택될 수 있다. The light emitting device 350 may include first and second bonding portions 351 and 352 and a light emitting structure 353. The light emitting device 350 may include a substrate 354 made of a translucent material. The length of the light emitting device 350 in the first direction may be greater than the length of the second direction. The light emitting structure 353 may be provided as a compound semiconductor, and may include an active layer between the first and second conductivity type semiconductor layers and between the first and second conductivity type semiconductor layers. The first bonding portion 351 may be electrically connected to the first conductivity type semiconductor layer. The second bonding portion 352 may be electrically connected to the second conductive type semiconductor layer. The active layer may be implemented, for example, in at least one of Group 3-Group-5 or Group-6-Group compound semiconductors. The substrate 354 may be a sapphire substrate (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge.
상기 발광소자(350)는 상기 제1 및 제2프레임(311,312)와 몸체(313) 위에 배치될 수 있다. 상기 발광소자(350)는 상기 캐비티(302) 내에 배치될 수 있다. 상기 제1 본딩부(351)는 상기 발광 구조물(353)과 상기 제1 프레임(311) 사이에 배치되고 상기 제2 본딩부(352)는 상기 발광 구조물(353)과 상기 제2 프레임(312) 사이에 배치될 수 있다. 상기 제1 및 제2본딩부(351,352)는 금속 재질일 수 있으며, 예컨대 Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO를 포함하는 중에서 적어도 하나를 포함하며, 단층 또는 다층으로 형성될 수 있다. 상기 발광소자(350)는 내부에 하나 또는 복수의 발광 셀을 포함할 수 있다. 상기 발광 셀은 n-p 접합, p-n 접합, n-p-n 접합, p-n-p 접합 중 적어도 하나의 발광 구조물을 포함할 수 있다. 상기 복수의 발광 셀은 하나의 발광소자 내에서 서로 직렬로 연결될 수 있다. 이에 따라 상기 발광소자는 하나 또는 복수의 발광 셀을 가질 수 있으며, 하나의 발광소자에 n개의 발광 셀이 배치된 경우 n배의 구동 전압으로 구동될 수 있다. The light emitting device 350 may be disposed on the first and second frames 311 and 312 and the body 313. The light emitting device 350 may be disposed in the cavity 302. The first bonding portion 351 is disposed between the light emitting structure 353 and the first frame 311 and the second bonding portion 352 is disposed between the light emitting structure 353 and the second frame 312. [ As shown in FIG. The first and second bonding portions 351 and 352 may be made of a metal and may be made of a metal such as Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, And at least one of Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au and Ni / IrOx / . The light emitting device 350 may include one or more light emitting cells. The light emitting cell may include at least one of a light emitting structure including an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series in one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are arranged in one light emitting device, the light emitting device may be driven with a driving voltage of n times.
도 3 및 도 4와 같이, 제1수지(330)는 상기 몸체(313) 상에서 발광소자(350)와 수직 방향으로 중첩될 수 있다. 예로서, 상기 제1수지(330)는 에폭시(epoxy) 계열, 실리콘(silicone) 계열, 에폭시 계열과 실리콘 계열의 물질을 포함하는 하이브리드(hybrid) 물질 중에서 적어도 하나를 포함할 수 있다. 상기 제1수지(330)는 화이트 실리콘(white silicone) 재질이거나, 실리콘 재질의 내부에 TiO2, SiO2, Al2O3 중 적어도 하나를 포함할 수 있다. 상기 제1수지(330)는 상기 발광소자(350)와 상기 몸체(313)에 접착될 수 있다. 상기 제1수지(330)는 상기 발광소자(350)의 제1본딩부(351)과 제2본딩부(352) 사이에 접착될 수 있다. 상기 발광소자(350)의 본딩부(351,352)를 본딩하는 공정이나 회로 기판 상에 본딩될 때, 상기 제1수지(330)는 발광소자(350)가 틸트되는 것을 방지할 수 있다. As shown in FIGS. 3 and 4, the first resin 330 may overlap the light emitting device 350 in the vertical direction on the body 313. For example, the first resin 330 may include at least one of a hybrid material including an epoxy-based material, a silicone-based material, an epoxy-based material, and a silicon-based material. The first resin 330 may be a white silicone material or may be formed of a material such as TiO 2 , SiO 2 , Al 2 O 3 Or the like. The first resin 330 may be adhered to the light emitting device 350 and the body 313. The first resin 330 may be bonded between the first bonding portion 351 and the second bonding portion 352 of the light emitting device 350. The first resin 330 may prevent the light emitting device 350 from being tilted when bonding the bonding portions 351 and 352 of the light emitting device 350 or bonding the same to a circuit board.
상기 발광소자 패키지(300)는 적어도 2개의 관통홀을 포함할 수 있다. 상기 제1 프레임(311)은 제1 관통홀(TH31) 및 상기 제2 프레임(312)은 상기 제2 관통홀(TH32)을 포함할 수 있다. 상기 제1 및 제2 관통홀(TH31,TH32) 각각은 상기 제1 및 제2 프레임(311,312)의 상면 및 하면을 통해 관통될 수 있으며, 하나 또는 복수로 제공될 수 있다. 상기 제1 및 제2관통홀(TH31,TH32)은 수평 방향으로 상기 몸체(313)로부터 이격될 수 있으며, 상기 발광소자(350)와 수직 방향으로 중첩될 수 있으며, 상기 제1 및 제2 본딩부(351,352)와 대면될 수 있다. 상기 제1 및 제2 본딩부(351,352)는 상기 제1 및 제2 관통홀(TH31,TH32)을 통해 노출되고, 상기 제1 및 제2 관통홀(TH31,TH32)에 배치되는 도전부(321)를 통해 전기적인 경로 및 방열 경로로 연결될 수 있다. The light emitting device package 300 may include at least two through holes. The first frame 311 may include a first through hole TH31 and the second frame 312 may include a second through hole TH32. Each of the first and second through holes TH31 and TH32 may pass through the top and bottom surfaces of the first and second frames 311 and 312 and may be provided in one or more. The first and second through holes TH31 and TH32 may be spaced apart from the body 313 in the horizontal direction and may overlap the light emitting device 350 in the vertical direction, 351 and 352, respectively. The first and second bonding portions 351 and 352 are exposed through the first and second through holes TH31 and TH32 and electrically connected to the conductive portions 321 and 322 disposed in the first and second through holes TH31 and TH32, ) To the electrical path and the heat dissipation path.
도 1 및 도 2와 같이, 상기 제1 및 제2 관통홀(TH31,TH32)은 탑뷰 형상 또는 상부 형상이 서로 동일하거나 다를 수 있으며, 예컨대 원 형상, 타원 형상 또는 다각형 형상일 수 있다. 상기 제1 및 제2 관통홀(TH31,TH32)은 상면 형상과 하면 형상이 서로 다를 수 있으며, 예컨대 비 대칭 형상으로 형성될 수 있다. 상기 제1 및 제2 관통홀(TH31,TH32)은 하면 면적이 상면 면적보다 클 수 있다. As shown in FIGS. 1 and 2, the first and second through holes TH31 and TH32 may have the same or different top view shapes or top shapes, and may be circular, elliptical, or polygonal shapes, for example. The first and second through holes TH31 and TH32 may have a top surface shape and a bottom surface shape, and may be formed in an asymmetric shape, for example. The bottom surface area of the first and second through holes TH31 and TH32 may be larger than the top surface area.
도 6 내지 도 8과 같이, 상기 각 관통홀(TH31,TH32)의 상면의 중심(Pc1)과 하면의 중심(Pc2)은 서로 어긋나게 배치될 수 있다. 상기 제1 관통홀(TH31)에서 상면의 중심(Pc1)은 하면의 중심(Pc2)보다 제2프레임(312) 또는 제2측면(S2)에 더 인접하게 배치되며, 하면의 중심(Pc2)은 상면의 중심(Pc1)보다 제2프레임(312) 또는 제2측면(S2)에 더 인접할 수 있다. 상기 제2 관통홀(TH32)에서 상면의 중심(Pc1)은 하면의 중심(Pc2)보다 제1프레임(311) 또는 제1측면(S1)에 더 인접하게 배치되며, 하면의 중심(Pc2)은 상면의 중심(Pc1)보다 제1프레임(311) 또는 제1측면(S1)에 더 인접할 수 있다. 여기서, 상기 각 관통홀(TH31,TH32)의 상면의 중심은 상기 각 관통홀(TH31,TH32)의 상면에서 외곽 선을 이루는 점들을 서로 교차되는 방향으로 연결하고 각 방향에서 가장 긴 가상 직선이 교차되는 지점이 중심일 수 있다. 예컨대, 상기 각 관통홀(TH31,TH32)의 상면의 중심은 제1 및 제2방향으로 가장 긴 가상 직선이 교차되는 지점일 수 있다. 상기 각 관통홀(TH31,TH32)의 상면의 중심은 상면의 무게 중심이 될 수 있다. 여기서, 상기 각 관통홀(TH31,TH32)의 하면의 중심은 상기 각 관통홀(TH31,TH32)의 하면에서 외곽 선을 이루는 점들을 서로 교차되는 방향으로 가상의 직선을 연결하고 각 방향에서 가장 긴 가상 직선이 교차되는 지점이 중심일 수 있다. 예컨대, 상기 각 관통홀(TH31,TH32)의 하면의 중심은 제1 및 제2방향으로 가장 긴 가상 직선이 교차되는 지점일 수 있다. 상기 각 관통홀(TH31,TH32)의 하면 중심은 하면의 무게 중심이 될 수 있다.6 to 8, the center Pc1 of the upper surface of each of the through holes TH31 and TH32 and the center Pc2 of the lower surface of the through holes TH31 and TH32 may be shifted from each other. The center Pc1 of the upper surface in the first through hole TH31 is disposed closer to the second frame 312 or the second side S2 than the center Pc2 of the lower surface, May be closer to the second frame 312 or the second side S2 than the center Pc1 of the upper surface. The center Pc1 of the upper surface in the second through hole TH32 is disposed closer to the first frame 311 or the first side S1 than the center Pc2 of the lower surface, It may be closer to the first frame 311 or the first side S1 than the center Pc1 of the upper surface. The center of the upper surface of each of the through holes TH31 and TH32 connects the points forming the outline lines on the upper surface of each of the through holes TH31 and TH32 in an intersecting direction and the longest virtual straight line in each direction crosses May be the center. For example, the center of the upper surface of each of the through holes TH31 and TH32 may be a point where the longest virtual straight line intersects in the first and second directions. The center of the upper surface of each of the through holes TH31 and TH32 may be the center of gravity of the upper surface. The centers of the lower surfaces of the through holes TH31 and TH32 connect virtual lines in directions intersecting the points forming the outline lines on the lower surfaces of the through holes TH31 and TH32, The point at which the imaginary straight line intersects can be the center. For example, the center of the lower surface of each of the through holes TH31 and TH32 may be a point at which the longest virtual straight line intersects in the first and second directions. The lower center of each of the through holes TH31 and TH32 can be the center of gravity of the lower face.
상기 각 관통홀(TH31,TH32)에서 제1방향의 상부 폭이 W1이고 하부 폭이 W2이며, 제2방향의 상부 폭이 W3이고 하부 폭이 W4인 경우, W1<W2의 관계를 가지며, W3<W4의 관계를 가질 수 있다. 상기 W1=W2<W4<W2의 관계를 가질 수 있다. 여기서, W1:W2의 비율은 1:1.5 내지 1:2.4의 비율을 가지며, W3:W4의 비율은 1:1.2 내지 1:1.6의 비율을 가질 수 있다. 상기 각 관통홀(TH31,TH32)의 제1 및 제2방향의 하부 폭이 상부 폭보다 크게 배치됨으로써, 상기 각 관통홀(TH31,TH32)에 채워지거나 삽입되는 도전부(321)가 보다 높은 밀도로 채워질 수 있고 전기 전도 효율의 개선 및 도전성 물질의 크랙을 억제할 수 있다. 상기 도전성 물질은 도전부(321) 또는/및 도전돌기로 정의될 수 있다. 상기 각 관통홀(TH31,TH32)의 상부 면적은 상기 각 본딩부(351,352)의 하면 면적의 30% 이상 예컨대, 30% 내지 98%의 범위를 가질 수 있다. 상기 각 관통홀(TH31,TH32)의 상부에서 제1방향의 폭(W1)은 제2방향의 폭(W3)보다 5㎛ 이하의 차이를 가질 수 있으며, 상기 각 관통홀(TH31,TH32)의 하부에서 제2방향의 폭(W4)은 상부의 제2방향의 폭(W3)보다 50㎛ 이상으로 더 넓을 수 있다. 예컨대 하부 폭 W4는 상부 폭 W3보다 50 내지 150㎛의 범위로 넓을 수 있다. 상기 제1방향의 하부 폭(W2)이 상기 제2방향의 하부 폭(W4)보다 100㎛ 이상 넓을 수 있다. 상기 제1방향의 하부 폭(W2)과 상기 제2방향의 하부 폭(W4)의 차이는 100㎛ 이상일 수 있다. 상기 각 관통홀(TH31,TH32)은 하부에서 제1방향의 폭(W2)은 400㎛ 이상 예컨대, 400 내지 600㎛의 범위 또는 450 내지 600㎛의 범위일 수 있다. 상기 각 관통홀(TH31,TH32)의 하부에서 제2방향의 폭(W4)은 300㎛ 이상 예컨대, 300 내지 400㎛의 범위일 수 있다. 상기 각 관통홀(TH31,TH32)의 하부 형상을 상부 형상에 대해 비 대칭적으로 크게 형성함으로써, 상기 각 관통홀(TH31,TH32)의 하부에서 상부 방향으로 채워지는 도전부(321)의 양이 증가될 수 있다. 상기 각 관통홀(TH31,TH32)의 깊이는 상기 프레임(311,312)의 두께와 동일할 수 있다. 상기 각 관통홀(TH31,TH32)은 상부에서 하부로 갈수록 점차 넓은 너비를 가질 수 있다. 상기 각 관통홀(TH31,TH32)은 상부에서 하부로 갈수록 제1방향으로 폭이 증가되는 비율이 제2방향으로 폭이 증가되는 비율보다 클 수 있다.W1 <W2 when the top width in the first direction is W1, the bottom width is W2, the top width in the second direction is W3, and the bottom width is W4 in the through holes TH31 and TH32, &Lt; W4. W1 = W2 < W4 < W2. Here, the ratio of W1: W2 is 1: 1.5 to 1: 2.4, and the ratio of W3: W4 is 1: 1.2 to 1: 1.6. The bottom widths of the through holes TH31 and TH32 in the first and second directions are larger than the top width so that the conductive portions 321 filled in or inserted into the through holes TH31 and TH32 have a higher density It is possible to improve the electric conduction efficiency and to suppress the crack of the conductive material. The conductive material may be defined as a conductive part 321 and / or a conductive protrusion. The upper surface area of each of the through holes TH31 and TH32 may be 30% or more, for example, 30% to 98% of the bottom surface area of each of the bonding portions 351 and 352. The width W1 in the first direction at the upper portion of each of the through holes TH31 and TH32 may be 5 μm or less than the width W3 in the second direction. The width W4 in the second direction from the bottom may be wider than 50 m or more than the width W3 in the second direction. For example, the lower width W4 may be wider than the upper width W3 in the range of 50 to 150 mu m. The bottom width W2 in the first direction may be 100 mu m or more wider than the bottom width W4 in the second direction. The difference between the lower width W2 in the first direction and the lower width W4 in the second direction may be 100 mu m or more. The width W2 of the through holes TH31 and TH32 in the first direction in the lower direction may be in the range of 400 m or more, for example, 400 to 600 m or 450 to 600 m. The width W4 in the second direction in the lower portions of the through holes TH31 and TH32 may be in the range of 300 mu m or more, for example, 300 to 400 mu m. The lower portions of the through holes TH31 and TH32 are formed asymmetrically with respect to the upper portion so that the amount of the conductive portions 321 filled in the upper portions of the lower portions of the through holes TH31 and TH32 Can be increased. The depths of the through holes TH31 and TH32 may be equal to the thickness of the frames 311 and 312, respectively. The through holes TH31 and TH32 may have a gradually wider width from the top to the bottom. The through holes TH31 and TH32 may have a larger width in the first direction than a width in the second direction.
도 5와 같이, 상기 각 관통홀(TH31,TH32)의 내 측면은 수직한 면, 경사진 면, 볼록한 곡면, 또는 오목한 곡면 중 적어도 2개 이상을 포함할 수 있다. 다른 예로서, 상기 각 관통홀(TH31,TH32)의 내 측면은 볼록한 곡면과 오목한 곡면을 가지거나, 오목한 곡면과 볼록한 곡면 사이에 변곡점을 가질 수 있다. 상기 각 관통홀(TH31,TH32)에서 변곡점이나 상부 및 하부의 경계 지점(CP1,CP2, 도 5 참조)은 프레임(311,312)의 하면보다 상면에 더 인접할 수 있다. 상기 각 관통홀(TH31,TH32)의 내 측면은 볼록한 곡면에 러프니스가 배치될 수 있다. As shown in FIG. 5, the inner surfaces of the through holes TH31 and TH32 may include at least two of a vertical surface, an inclined surface, a convex surface, or a concave surface. As another example, the inside surfaces of the through holes TH31 and TH32 may have convex curved surfaces and concave curved surfaces, or may have inflection points between concave curved surfaces and convex curved surfaces. The inflection points in the through holes TH31 and TH32 and the boundary points CP1 and CP2 (see FIG. 5) at the upper and lower sides may be closer to the upper surface than the lower surface of the frames 311 and 312. The inner surfaces of the through holes TH31 and TH32 may be arranged with a rough surface on a convex curved surface.
상기 프레임(311,312)의 두께(k0)는 180㎛ 이상 예컨대, 180 내지 300㎛의 범위일 수 있다. 상기 프레임(311,312)의 두께(k0)가 상기 범위보다 크면 패키지 두께가 증가될 수 있고 상기 범위보다 작으면 방열 효율이 저하될 수 있다. 상기 프레임(311,312)의 두께가 k0인 경우, 상기 각 관통홀(TH31,TH32)의 내측 영역의 상부 두께(k2)는 외측 영역의 상부 두께(k1)보다 두꺼울 수 있다. 상기 각 관통홀(TH31,TH32)의 내측 영역은 몸체(315)에 더 인접한 영역일 수 있다. 상기 프레임(311,312)에서 각 관통홀(TH31,TH32)의 내측 영역은 상부 두께(k2)가 상기 각 프레임(311,312)의 두께(k0)의 0.4배 이하 예컨대, 0.3 내지 0.4 배의 범위일 수 있다. 상기 프레임(311,312)에서 각 관통홀(TH31,TH32)의 외측 영역은 상부 두께(k1)가 상기 제1 및 제2프레임(311,312)의 두께(k0)의 0.45배 이하 예컨대, 0.35배 내지 0.45 배의 범위일 수 있다. 상기 각 관통홀(TH31,TH32)에서 외측 영역의 상부 두께(k1)는 100㎛ 미만일 수 있다. 상기 각 관통홀(TH31,TH32)에서 외측 영역의 상부 두께(k1)와 내측 영역의 상부 두께(k2) 차이는 10㎛ 이상 예컨대, 10 내지 40㎛의 범위일 수 있다. 상기 각 관통홀(TH31,TH32)에서 내측 영역과 외측 영역은 상기의 경계 지점(CP1,CP2)일 수 있으며, 상기 두께는 상기 경계 지점(CP1,CP2)에서의 프레임 상면까지의 거리일 수 있다. 여기서, 상기 각 관통홀(TH31,TH32)에서 외측 영역의 상부 두께(k1<k2)가 더 얇기 때문에, 상기 각 관통홀(TH31,TH32)의 하부 폭을 더 넓게 제공할 수 있다. 이러한 각 관통홀(TH31,TH32)의 하부 형상을 비 대칭적인 형상으로 형성해 줄 수 있어, 상기 각 관통홀(TH31,TH32)에 도전부(321)가 채워질 때 더 높은 밀도 또는 더 많은 함량으로 채워지고 경화될 수 있다. The thickness k0 of the frames 311 and 312 may be in the range of 180 占 퐉 or more, for example, 180 to 300 占 퐉. If the thickness k0 of the frames 311 and 312 is larger than the above range, the package thickness may be increased. If the thickness k0 is smaller than the above range, the heat dissipation efficiency may be lowered. When the thickness of the frames 311 and 312 is k0, the upper thickness k2 of the inner region of each of the through holes TH31 and TH32 may be thicker than the upper thickness k1 of the outer region. The inner region of each of the through holes TH31 and TH32 may be a region further adjacent to the body 315. [ The inner area of each of the through holes TH31 and TH32 in the frames 311 and 312 may have a top thickness k2 of 0.4 times or less of the thickness k0 of each of the frames 311 and 312, . The outer regions of the through holes TH31 and TH32 in the frames 311 and 312 are formed such that the upper thickness k1 is 0.45 times or less of the thickness k0 of the first and second frames 311 and 312, Lt; / RTI &gt; The upper thickness k1 of the outer region in each of the through holes TH31 and TH32 may be less than 100 mu m. The difference between the upper thickness k1 of the outer region and the upper thickness k2 of the inner region in each of the through holes TH31 and TH32 may be in the range of 10 μm or more, for example, 10 to 40 μm. The inner region and the outer region in the through holes TH31 and TH32 may be the boundary points CP1 and CP2 and the thickness may be a distance to the upper surface of the frame at the boundary points CP1 and CP2 . Since the upper thickness k1 &lt; k2 of the outer region in each of the through holes TH31 and TH32 is thinner, the lower width of each of the through holes TH31 and TH32 can be widened. The lower portions of the through holes TH31 and TH32 can be formed in an asymmetrical shape so that the through holes TH31 and TH32 are filled with the higher density or more when the conductive portion 321 is filled And can be hardened.
상기 각 관통홀(TH31,TH32)의 경계 지점(CP1,CP2)과 관통홀(TH31,TH32)의 양 하단을 연결한 직선은 몸체 하면에 수평한 직선으로부터 제1 및 제2각도(θ35,θ36)로 형성될 수 있다. 상기 관통홀(TH31,TH32)에서 외측 영역의 변곡점으로부터 연장된 직선의 제1각도(θ35)는 내측 영역의 변곡점으로부터 연장된 직선의 제2각도(θ36)보다 클 수 있다. 여기서, 프레임에서의 관통홀의 형성 방법은 관통홀의 하부의 에칭 액의 분사 압력을 상부의 에칭 액의 분사 압력보다 크게 하여, 관통홀의 하부의 에칭 면적을 증가시켜 줄 수 있다.The straight line connecting the boundary points CP1 and CP2 of the through holes TH31 and TH32 and the lower ends of the through holes TH31 and TH32 is a straight line connecting the first and second angles? ). The first angle? 35 of the straight line extending from the inflection point of the outer region in the through holes TH31 and TH32 may be larger than the second angle? 36 of the straight line extending from the inflection point of the inner region. Here, the method of forming the through-hole in the frame can increase the etching pressure of the lower portion of the through-hole to be larger than the injection pressure of the upper portion of the etching liquid, thereby increasing the etching area under the through-hole.
도 1 및 도 4와 같이, 리세스(R31,R32)는 상기 몸체(313)의 상부에 하나 또는 복수로 제공되며, 상기 몸체(313)의 상면에서 하면 방향으로 오목할 수 있다. 리세스(R31,R32)는 상기 제1 및 제2관통홀(TH31,TH32) 사이에 배치되거나, 상기 제1 및 제2프레임(311,312) 사이에 배치될 수 있다. 상기 리세스(R31,R32)는 제1 및 제2리세스(R31,R32)를 포함할 수 있으며, 상기 제1 및 제2리세스(R31,R32)의 적어도 일부 또는 모두는 상기 발광소자(350)와 수직 방향으로 중첩될 수 있다. 상기 제1 및 제2리세스(R31,R32)는 상기 제1 및 제2관통홀(TH31,TH32)과 제1방향으로 중첩되지 않을 수 있어, 누설되는 제1수지(330)의 댐(dam) 역할을 할 수 있다. 상기 제1 및 제2리세스(R31,R32)는 상기 발광소자(350)와 중첩되는 내측부와, 상기 발광소자(350)로부터 외측으로 돌출된 외측부를 포함할 수 있다. 상기 제1 및 제2리세스(R31,R32)에서 내측부와 외측부의 비율은 4:6 내지 6:4의 범위일 수 있으며, 상기 발광소자(350)의 하부에서의 광 손실을 줄여줄 수 있다. 다른 예로서, 상기 몸체(313)의 리세스(R31,R32)는 제1방향으로의 몸체의 열 변형을 완화시켜 주어, 전도성 페이스트의 크랙을 억제할 수 있다. As shown in FIGS. 1 and 4, the recesses R31 and R32 may be provided on the upper portion of the body 313, or may be recessed in a downward direction from the upper surface of the body 313. The recesses R31 and R32 may be disposed between the first and second through holes TH31 and TH32 or may be disposed between the first and second frames 311 and 312. [ The recesses R31 and R32 may include first and second recesses R31 and R32 and at least a part or all of the first and second recesses R31 and R32 may be connected to the light emitting element 350 in the vertical direction. The first and second recesses R31 and R32 may not overlap with the first and second through holes TH31 and TH32 in the first direction so that the dam of the first resin 330 ) Can play a role. The first and second recesses R31 and R32 may include an inner portion overlapping the light emitting device 350 and an outer portion protruding outward from the light emitting device 350. [ The ratio of the inner portion to the outer portion in the first and second recesses R31 and R32 may be in the range of 4: 6 to 6: 4, and the light loss at the lower portion of the light emitting device 350 may be reduced . As another example, the recesses R31 and R32 of the body 313 relax the thermal deformation of the body in the first direction, thereby suppressing the crack of the conductive paste.
상기 리세스(R31,R32)의 깊이가 t1이고, 상기 관통홀(TH31,TH32)의 깊이가 t2인 경우, 예로서, 상기 깊이(t2,t1)의 차이(t2-t1)는 적어도 150㎛ 이상으로 선택될 수 있다. 상기 몸체(313)의 두께는 크랙 프리(crack free)를 고려한 두께로 제공될 수 있다. 상기 깊이(t2)는 상기 깊이(t1)에 비해 2.5배 내지 12배의 범위로 제공될 수 있다. 예로서, t2의 깊이가 200㎛로 제공되는 경우, t1의 깊이는 20㎛ 내지 100㎛로 제공될 수 있다. When the depths of the recesses R31 and R32 are t1 and the depths of the through holes TH31 and TH32 are t2, for example, the difference t2-t1 between the depths t2 and t1 is at least 150 μm Or more. The thickness of the body 313 may be provided in consideration of crack free. The depth t2 may be provided in the range of 2.5 to 12 times the depth t1. As an example, when the depth of t2 is provided as 200 mu m, the depth of t1 may be provided as 20 mu m to 100 mu m.
상기 리세스(R31,R32) 및 제1수지(330)는 발광소자(350)의 접착력을 강화시켜 줄 수 있다. 제1수지(330)는 입사된 광을 확산하거나 반사할 수 있다. 상기 리세스(R31,R32)의 제1방향 폭은 상기 제1 본딩부(351)과 상기 제2 본딩부(352) 간의 간격보다 좁게 제공될 수 있으며, 140㎛ 이상 예컨대, 140 내지 160㎛의 범위로 제공될 수 있다. 상기 리세스(R31,R32)의 제2 방향의 길이는 상기 발광소자(350)의 제2 방향의 길이보다 작게 배치될 수 있다. 상기 리세스(R31,R32)는 탑뷰 형상이 다각형 형상, 원 형상 또는 타원 형상일 수 있다. 상기 리세스(R31,R32)은 측 단면 형상이 다각형 형상 또는 곡면 형상일 수 있다. 상기 리세스(R31,R32) 각각은 제1 및 제2방향으로 상부 너비가 하부 너비보다 넓을 수 있다. 상기 리세스(R31,R32)는 내부가 경사진 면으로 제공될 수 있어, 제1수지(330)를 가이드할 수 있다. 다른 예로서, 상기 리세스(R31,R32)는 상기 몸체(313) 상에서 제거될 수 있다. The recesses (R31, R32) and the first resin (330) can enhance the adhesion of the light emitting device (350). The first resin 330 may diffuse or reflect the incident light. The first direction width of the recesses R31 and R32 may be narrower than the gap between the first bonding portion 351 and the second bonding portion 352. The width of the recesses R31 and R32 may be 140 mu m or more, &Lt; / RTI &gt; The length of the recesses R31 and R32 in the second direction may be smaller than the length of the light emitting device 350 in the second direction. The recesses R31 and R32 may be polygonal, circular or elliptical in top view shape. The recesses R31 and R32 may have a polygonal or curved cross-sectional shape. Each of the recesses R31 and R32 may have an upper width larger than a lower width in the first and second directions. The recesses R31 and R32 may be provided with an inclined surface to guide the first resin 330. As another example, the recesses R31 and R32 may be removed on the body 313.
상기 각 프레임(311,312)과 상기 각 본딩부(351,352)는 금속간 화합물층에 의해 결합될 수 있다. 상기 금속간 화합물은 CuxSny, AgxSny, AuxSny 중 적어도 하나를 포함할 수 있으며, 상기 x는 0<x<1, y=1-x, x>y의 조건을 만족할 수 있다.Each of the frames 311 and 312 and the bonding portions 351 and 352 may be bonded by an intermetallic compound layer. The intermetallic compound may include at least one of Cu x Sn y , Ag x Sn y and Au x Sn y , where x satisfies the condition of 0 <x <1, y = 1-x, x> y .
도 4 및 도 5와 같이, 도전부(321)는 상기 제1 및 제2 관통홀(TH31,TH32) 내에 배치될 수 있다. 상기 제1 관통홀(TH31)에 배치된 도전부(321)는 상기 제1 본딩부(351)의 하면 및 상기 제1 프레임(311)과 접촉될 수 있다. 상기 제2 관통홀(TH32)에 배치된 도전부(321)는 상기 제2 본딩부(352)의 하면과 제2프레임(312)과 접촉될 수 있다. 상기 제1 및 제2관통홀(TH31,TH32)에 배치된 도전부(321)는 상기 관통홀(TH31,TH32)의 체적의 30% 이상 예컨대, 30% 내지 300%의 범위로 채워질 수 있고, 상기 범위보다 작은 경우 전기적인 신뢰성이 저하될 수 있고 상기 범위보다 큰 경우 도전부의 돌출로 인해 회로 기판과의 본딩력이 저하될 수 있다. 상기 도전부(321)는 Ag, Au, Pt, Sn, Cu, Zn, In, Bi, 접촉, Ti 중에서 선택된 하나의 물질 또는 그 합금을 포함할 수 있다. 상기 도전부(321)는 솔더 페이스트로서, 파우더 입자 또는 파티클 입자와 플럭스의 혼합으로 형성될 수 있다. 상기 솔더 페이스트는 Sn-Ag-Cu를 포함할 수 있으며, 각 금속의 중량%는 달라질 수 있다. 예로서, 상기 도전부(321)는 솔더 페이스트, 또는 실버 페이스트를 갖는 도전성 페이스트로 형성되거나, 서로 다른 물질로 구성되는 다층 또는 합금으로 형성될 수 있다. 상기 도전부(321)와 상기 프레임(311,312) 사이에는 합금층이 형성될 수 있으며, 상기 합금층은 AgSn, CuSn, AuSn 중에서 적어도 하나를 갖는 금속간 화합물층을 포함할 수 있다. 상기 발광소자(350)의 본딩부(351,352)는 상기 도전부(321)를 구성하는 물질과 상기 도전부(321)를 형성되는 과정 또는 상기 도전부(321)의 열처리 과정에서, 상기 도전부(321)와 상기 프레임(311,312) 사이에 금속간 화합물(IMC; intermetallic compound)층이 형성될 수 있다.4 and 5, the conductive portion 321 may be disposed in the first and second through holes TH31 and TH32. The conductive part 321 disposed in the first through hole TH31 may be in contact with the lower surface of the first bonding part 351 and the first frame 311. [ The conductive part 321 disposed in the second through hole TH32 may be in contact with the lower surface of the second bonding part 352 and the second frame 312. [ The conductive portions 321 disposed in the first and second through holes TH31 and TH32 may be filled in a range of 30% or more, for example, 30% to 300% of the volume of the through holes TH31 and TH32, If it is smaller than the above range, the electrical reliability may be deteriorated. If it is larger than the above range, the bonding force with the circuit board may be lowered due to protrusion of the conductive part. The conductive portion 321 may include a material selected from the group consisting of Ag, Au, Pt, Sn, Cu, Zn, In, Bi, The conductive part 321 may be a solder paste, and may be formed by mixing powder particles or particle particles with flux. The solder paste may include Sn-Ag-Cu, and the weight percentage of each metal may be varied. For example, the conductive portion 321 may be formed of a conductive paste having a solder paste or a silver paste, or may be formed of a multi-layer or an alloy composed of different materials. An alloy layer may be formed between the conductive part 321 and the frames 311 and 312, and the alloy layer may include an intermetallic compound layer having at least one of AgSn, CuSn, and AuSn. The bonding portions 351 and 352 of the light emitting device 350 may be electrically connected to the conductive portion 321 in the process of forming the conductive portion 321 and the conductive portion 321, Intermetallic compound (IMC) layers may be formed between the first and second substrates 321 and 321 and the frames 311 and 312, respectively.
상기 제1 및 제2관통홀(TH31,TH32)은 상기 도전부(321)와의 경계 면에 보이드(void)를 포함할 수 있다. 상기 보이드는 상기 도전부(321)가 충진될 때, 다른 프레임이나 본딩부 사이의 계면에서 발생될 수 있다. 상기 제1 및 제2관통홀의 형상에 의해 도전부의 충진 양이 증가되므로, 보이드의 생성을 억제하거나 제거할 수 있어, 상기 도전부의 크랙을 방지할 수 있고, 전기 전도 효율 및 열 전도 효율은 개선될 줄 수 있다. The first and second through holes TH31 and TH32 may include a void at a boundary surface with the conductive portion 321. [ The void may be generated at the interface between another frame or the bonding portion when the conductive portion 321 is filled. Since the filling amount of the conductive portions is increased by the shapes of the first and second through holes, generation of voids can be suppressed or eliminated, cracks in the conductive portions can be prevented, and electric conduction efficiency and heat conduction efficiency can be improved You can give.
도 2 내지 도 4와 같이, 상기 제1 및 제2프레임(311,312)의 하부에는 하부 리세스(R33,R33)가 배치될 수 있다. 상기 하부 리세스(R33,R34)는 상기 제1 및 제2관통홀(TH31,TH32)의 하부 둘레에서 상기 몸체(313)의 일부와 결합될 수 있다. As shown in FIGS. 2 to 4, lower recesses R33 and R33 may be disposed under the first and second frames 311 and 312, respectively. The lower recesses R33 and R34 may be coupled to a portion of the body 313 around the lower portion of the first and second through holes TH31 and TH32.
도 4와 같이, 상기 발광소자(350)는 하부에 제1 및 제2 도전돌기(351A,352A)를 포함하며, 상기 제1 및 제2 도전돌기(351A,352A)는 상기 제1 및 제2본딩부(351,352)에서 몸체의 하면 방향으로 연장될 수 있고, 상기 제1 및 제2관통홀(TH31,TH32) 내에 배치될 수 있다. 상기 제1 및 제2 도전돌기(351A,352A)는 금속 재질로 형성될 수 있으며, 예컨대 Ag, Au, Cu, Ti, Ni 중에서 선택된 적어도 하나의 물질을 포함하며 단층 또는 다층으로 형성될 수 있다. 상기 제1 및 제2 도전돌기(351A, 352A)는 씨드층을 포함할 수 있다. 상기 씨드층은 예로서 Ti, Ni, Cu 중 적어도 하나를 갖고 단층 또는 다층으로 형성될 수 있다. 상기 제1 및 제2 도전돌기(351A,352A)는 상기 씨드층 상에 돌출된 금속 기둥을 포함할 수 있으며, 상기 금속 기둥은 Cu, Au, Ag 중 적어도 하나를 포함할 수 있다. 상기 금속 기둥은 바텀뷰 형상이 원 기둥 또는 다각 기둥 형상일 수 있다. 상기 제1 및 제2 도전돌기(351A,352A) 간의 간격은 상기 제1 및 제2관통홀(TH31,TH32) 간의 최소 간격보다 넓을 수 있다. 상기 제1 및 제2 도전돌기(351A,352A)는 상기 제1 및 제2본딩부(351,352)의 바닥 면적보다 작은 바닥면적을 갖고, 상기 제1 및 제2관통홀(TH31,TH32)에 배치된 도전부(321)와 연결될 수 있다. 상기 제1 본딩부(351), 상기 제1 도전돌기(351A), 상기 도전부(321), 상기 제1 프레임(311)은 부분적으로 접합될 수 있다. 상기 제2 본딩부(352), 상기 제2 도전돌기(352A), 상기 도전부(321), 상기 제2 프레임(312)은 부분적으로 접합될 수 있다. 상기 제1 및 제2 도전돌기(351A,352A)는 상기 도전부(321)와 제1 및 제2본딩부(351,352) 사이의 계면에서 열 변형에 의해 상기 도전부(321)의 크랙이 생성되거나 확산되는 것을 억제할 수 있다. 상기 제1 및 제2 도전돌기(351A,352A)는 상기 제1 및 제2관통홀(TH31,TH32)의 상면으로부터 상기 제1 및 제2관통홀(TH31,TH32)의 깊이의 5% 이상 예컨대, 5% 내지 40%의 범위로 형성될 수 있다. 4, the light emitting device 350 includes first and second conductive protrusions 351A and 352A at a lower portion thereof, and the first and second conductive protrusions 351A and 352A include first and second conductive protrusions 351A and 352A. And may extend in the bottom direction of the body in the bonding portions 351 and 352 and may be disposed in the first and second through holes TH31 and TH32. The first and second conductive protrusions 351A and 352A may be formed of a metal material and include at least one material selected from Ag, Au, Cu, Ti, and Ni, and may be formed as a single layer or multiple layers. The first and second conductive protrusions 351A and 352A may include a seed layer. The seed layer may have at least one of Ti, Ni, and Cu as a single layer or a multi-layer. The first and second conductive protrusions 351A and 352A may include a metal column protruded on the seed layer, and the metal column may include at least one of Cu, Au, and Ag. The metal column may have a bottom view shape of a circular column or a polygonal columnar shape. The gap between the first and second conductive protrusions 351A and 352A may be wider than the minimum gap between the first and second through holes TH31 and TH32. The first and second conductive protrusions 351A and 352A have a bottom area smaller than the bottom area of the first and second bonding parts 351 and 352 and are disposed in the first and second through holes TH31 and TH32 The conductive part 321 may be connected to the conductive part 321. The first bonding portion 351, the first conductive protrusion 351A, the conductive portion 321, and the first frame 311 may be partially bonded. The second bonding portion 352, the second conductive protrusion 352A, the conductive portion 321, and the second frame 312 may be partially bonded. The first and second conductive protrusions 351A and 352A are formed by cracking of the conductive portion 321 due to thermal deformation at the interface between the conductive portion 321 and the first and second bonding portions 351 and 352 It is possible to suppress diffusion. The first and second conductive protrusions 351A and 352A are formed to have a depth equal to or greater than 5% of the depth of the first and second through holes TH31 and TH32 from the upper surfaces of the first and second through holes TH31 and TH32 , And 5% to 40%.
도 6은 관통홀의 일 예로서, 관통홀(TH31,TH32)은 상부 형상이 원 형상이고, 하부 또는 바닥 형상이 제1방향으로 긴 길이를 갖는 타원 형상이거나, 코너가 곡선 형상을 갖는 다각형 형상일 수 있다. 상기 관통홀(TH31,TH32)은 몸체(313)를 기준으로 상기 몸체(313)로부터 멀어질수록 하부 또는 바닥 형상의 면적이 더 넓게 형성되므로, 도전부의 접합 면적이나 채워지는 양이 증가될 수 있다. 도 7과 같이, 상기 관통홀(TH31,TH32)은 상부 형상이 제2방향으로 긴 길이를 갖는 타원 형상이고, 하부 형상이 제1방향으로 긴 길이를 갖는 타원 형상이거나, 사각형 형상의 양 변이 곡선 형상을 갖는 형상일 수 있다. 즉, 상기 관통홀(TH31,TH32)의 상부 형상과 하부 형상이 길이가 긴 형상이 서로 직교되는 방향으로 배치될 수 있다. 이 경우, 상기 관통홀(TH31,TH32)에 배치되는 도전돌기(351A,352A)의 형상은 제2방향으로 긴 길이로 형성될 수 있다. 도 8과 같이, 상기 관통홀(TH31,TH32)은 상부 형상이 원 형상이고, 하부 형상이 상부 형상의 직경보다 큰 직경을 갖는 원 형상일 수 있다. 도 6 내지 도 8에서 제1방향의 폭(W1,W2)와 제2방향의 폭(W3,W4)의 관계는 상기에 개시된 설명을 참조하기로 한다. 이러한 상기 관통홀(TH31,TH32)에는 도전부가 배치되어, 도전돌기(351A,352A)와 결합될 수 있다. 6 shows an example of a through hole. The through holes TH31 and TH32 may have an elliptical shape whose upper shape is a circular shape and whose lower or bottom shape is long in the first direction, or a polygonal shape having a curved corner. . Since the areas of the through holes TH31 and TH32 are formed to be wider as the distance from the body 313 with respect to the body 313 is larger, the bonding area of the conductive parts or the amount of the filling can be increased . As shown in FIG. 7, the through holes TH31 and TH32 may have an elliptical shape whose upper shape is long in the second direction, an elliptical shape whose lower shape is long in the first direction, Shaped shape. That is, the upper shape and the lower shape of the through holes TH31 and TH32 may be arranged in a direction in which the long shapes are orthogonal to each other. In this case, the shape of the conductive protrusions 351A and 352A disposed in the through holes TH31 and TH32 may be long in the second direction. As shown in FIG. 8, the through holes TH31 and TH32 may have a circular shape with an upper shape and a lower shape with a circular shape having a diameter larger than that of the upper shape. 6 to 8, the relationship between the widths W1 and W2 in the first direction and the widths W3 and W4 in the second direction will be described with reference to the above description. The conductive portions are disposed in the through holes TH31 and TH32 and can be coupled with the conductive protrusions 351A and 352A.
리플로우 공정에서, 발광소자 패키지에 제공된 프레임과 발광소자 간의 본딩 영역에서 리멜팅(re-melting) 현상이 발생을 억제할 수 있다. 즉, 상기 도전부의 용융점이 다른 본딩 물질의 용융점에 비해 더 높은 값으로 제공될 수 있다. 따라서, 메인 기판 상에 발광소자 패키지가 리플로우(reflow) 공정을 통해 본딩되는 경우, 발광소자의 주변에서의 리멜팅(re-melting) 현상이 억제되며, 전기적 연결 및 물리적 본딩력의 열화를 방지할 수 있다. 따라서, 패키지 몸체(310)의 손상이나 변색을 방지할 수 있다. In the reflow process, it is possible to suppress the occurrence of re-melting in the bonding region between the frame provided in the light emitting device package and the light emitting device. That is, the melting point of the conductive part can be provided at a higher value than the melting point of the other bonding material. Therefore, when the light emitting device package is bonded onto the main substrate through the reflow process, the phenomenon of re-melting in the periphery of the light emitting device is suppressed and the deterioration of electrical connection and physical bonding force is prevented can do. Therefore, damage or discoloration of the package body 310 can be prevented.
도 2와 같이, 몰딩부(340)는 투광성 물질로 형성되며, 상기 발광소자(350), 상기 제1 및 제2프레임(311,312) 위에 배치될 수 있다. 상기 몰딩부(340)는 캐비티(302)에 배치될 수 있다. 상기 몰딩부(340)는 형광체 또는 양자점 중에서 적어도 하나를 포함하며, 파장 변환된 광을 발광할 수 있다. 상기 발광소자(350)는 청색, 녹색, 적색, 백색, 적외선 또는 자외선의 광을 발광할 수 있다. 상기 몰딩부(340)는 형성하지 않을 수 있다.As shown in FIG. 2, the molding part 340 is formed of a light-transmitting material and may be disposed on the light emitting device 350, the first and second frames 311 and 312. The molding part 340 may be disposed in the cavity 302. The molding unit 340 includes at least one of a phosphor and a quantum dot, and can emit wavelength-converted light. The light emitting device 350 may emit blue, green, red, white, infrared, or ultraviolet light. The molding part 340 may not be formed.
도 9를 참조하면, 프레임(311,312)은 제1 및 제2 금속층(L1, L2)을 포함하며, 상기 제1금속층(L1)은 베이스층이며, Cu, Ni, Ti를 포함할 수 있으며, 단층 또는 다층으로 형성될 수 있다. 상기 제2금속층(L2)은 Au, Ni층, Ag 층 중에서 적어도 하나를 포함할 수 있으며, 상기 Ni층은 열 팽창에 대한 변화가 작으며, Ag층은 발광되는 빛을 효율적으로 반사시키고 광도를 향상시킬 수 있으며, Au층은 상기 본딩부(351,352)와의 본딩력을 개선시키고 반사 효율을 개선시켜 줄 수 있다. 9, the frames 311 and 312 include first and second metal layers L1 and L2, the first metal layer L1 is a base layer, and may include Cu, Ni, and Ti, Or may be formed in multiple layers. The second metal layer L2 may include at least one of Au, Ni, and Ag layers. The Ni layer has a small change in thermal expansion. The Ag layer efficiently reflects the emitted light, And the Au layer can improve the bonding force with the bonding portions 351 and 352 and improve the reflection efficiency.
상기 도전부(321)는 상기 관통홀(TH31,TH32) 내에 100% 이하로 채워질 수 있으며, 예컨대 30% 내지 100%의 범위로 채워질 수 있으며, 상기 범위를 초과할 경우 회로 기판과의 본딩력이 저하될 수 있고 상기 범위보다 작을 경우 전도성 특성이 저하될 수 있다. 상기 도전부(321)와 상기 프레임(311,312) 사이에는 두 물질간의 결합에 의해 합금층(L3)이 형성될 수 있다. 상기 합금층(L3)은 AgSn, CuSn, AuSn 중에서 선택된 적어도 하나를 갖는 금속간 화합물층을 포함할 수 있다. The conductive portion 321 may be filled up to 100% or less in the through holes TH31 and TH32 and may be filled in the range of 30% to 100%, for example. If the conductive portion 321 is out of the range, And when it is smaller than the above range, the conductivity characteristics may be deteriorated. An alloy layer L3 may be formed between the conductive parts 321 and the frames 311 and 312 by bonding between the two materials. The alloy layer L3 may include an intermetallic compound layer having at least one of AgSn, CuSn, and AuSn.
도 10의 (a)와 같이, 관통홀(TH31,TH32)에 상부와 하부 사이의 볼록부(Pa)가 홀 내부 방향으로 돌출될 때, 도전부(321)의 주입 공정에서 상기 볼록부(Pa)에 걸려 주입 효율이 저하될 수 있고 홀 상부에 보이드 영역이 커질 수 있다. 이에 따라 본딩부(351)과 도전부(321) 사이의 계면에서 열 변형에 따른 크랙이 발생될 수 있고, 전기 전도율이 저하될 수 있다. 도 10의 (b)와 같이, 발광소자의 도전돌기(351A)를 관통홀(351)에 결합하더라도, 상기 도전돌기(351A)와 관통홀(351) 사이에 도전부(321)가 채워지기 어렵고 보이드 영역이 줄어들지 않으며, 도전부에서 크랙이 발생되거나 보이드로 인한 신뢰성이 저하될 수 있다. When the convex portion Pa between the upper portion and the lower portion protrudes in the hole in the through holes TH31 and TH32 as shown in FIG. 10A, the convex portion Pa The injection efficiency may be lowered and the void region may be larger on the hole. As a result, cracks may be generated at the interface between the bonding portion 351 and the conductive portion 321 due to thermal deformation, and the electrical conductivity may be lowered. The conductive portion 321 is hardly filled between the conductive protrusion 351A and the through hole 351 even when the conductive protrusion 351A of the light emitting element is coupled to the through hole 351 as shown in Figure 10 (b) The void area is not reduced, cracks may occur in the conductive part, or reliability due to voids may be deteriorated.
도 11을 참조하면, 관통홀(TH31,TH32)은 제1방향으로 열이 전달되므로, 제1방향으로 하부 폭을 길게 할 경우, 열이 전달되는 방향(Px1,Px2)으로의 열 전달 효율이 저하될 수 있다. 이에 따라 관통홀(TH31,TH32)의 하부 폭은 제1방향과 직교하는 제2방향으로 더 넓게 제공될 수 있다. 상기 관통홀(TH31,TH32)의 하부에서 제2방향으로의 연장 방향은 제1방향과 직각(θ31) 방향으로 형성되거나, 30도 내지 60도의 각도(θ32)로 어긋나게 형성될 수 있다. 이에 따라 제1방향으로의 프레임에 대한 열 전달 효율이 저하되는 것을 방지할 수 있다. 도 12를 참조하면, 관통홀(TH31,TH32)의 상면의 중심과 하면의 중심이 같은 중심에 있도록 할 수 있다. 이에 따라 제1방향으로의 프레임에 대한 열 전달 효율이 저하되는 것을 방지할 수 있으며, 동일 중심을 갖는 관통홀(TH31,TH32)에 의해 도전부(321)가 균일한 분포로 채워지거나 접촉될 수 있다.Referring to FIG. 11, since the heat is transmitted in the first direction through the through holes TH31 and TH32, when the lower width is made longer in the first direction, the heat transfer efficiency in the direction (Px1, Px2) Can be degraded. Accordingly, the bottom widths of the through holes TH31 and TH32 can be wider in the second direction orthogonal to the first direction. The extending direction in the second direction from the lower part of the through holes TH31 and TH32 may be formed in a direction orthogonal to the first direction or may be shifted by an angle of 30 to 60 degrees. Accordingly, the heat transfer efficiency with respect to the frame in the first direction can be prevented from being lowered. Referring to FIG. 12, the centers of the upper and lower surfaces of the through holes TH31 and TH32 may be located at the same center. Accordingly, the heat transfer efficiency with respect to the frame in the first direction can be prevented from being lowered, and the conductive portions 321 can be filled or contacted with the uniform distribution by the through holes TH31 and TH32 having the same center have.
<제2실시 예>&Lt; Embodiment 2 >
도 13 내지 도 17은 제2실시 예의 발광소자 패키지를 설명한 도면들이다. 제2실시 예의 설명에 있어서, 제1실시 예와 동일한 구성은 제1실시 예를 참조하며 선택적으로 적용할 수 있다.13 to 17 are views illustrating a light emitting device package according to the second embodiment. In the description of the second embodiment, the same configuration as that of the first embodiment can be selectively applied with reference to the first embodiment.
도 13 내지 도 17을 참조하면, 발광소자 패키지(100)는 복수의 프레임(120,130,135,140), 몸체(115), 복수의 발광소자(151,152,153)를 포함한다. 상기 복수의 발광소자(151,152,153)는 개별로 구동되도록 배치되거나, 직렬 또는 병렬로 구동될 수 있도록 연결될 수 있고, 하나 또는 복수의 발광 셀을 포함할 수 있다. 발광소자 패키지(100)에서 제1방향의 길이는 2.5mm 이상 예컨대, 2.5 내지 7mm의 범위일 수 있으며, 제2방향의 길이는 상기 제1방향의 길이와 같거나 클 수 있다. 상기 몸체(115)는 제1 내지 제4프레임(120,130,135,140) 사이에 배치되어, 제1 내지 제4프레임(120,130,135,140)들에 결합되고 지지할 수 있다. 13 to 17, the light emitting device package 100 includes a plurality of frames 120, 130, 135, and 140, a body 115, and a plurality of light emitting devices 151, 152, and 153. The plurality of light emitting devices 151, 152, and 153 may be individually driven, connected in series or in parallel, and may include one or more light emitting cells. In the light emitting device package 100, the length in the first direction may be equal to or greater than 2.5 mm, for example, 2.5 to 7 mm, and the length in the second direction may be equal to or greater than the length in the first direction. The body 115 may be disposed between the first through fourth frames 120, 130, 135, and 140 and may be coupled to and supported by the first through fourth frames 120, 130, 135, and 140.
상기 제2 프레임(130)은 상기 제1 및 제3프레임(120,135) 사이에 배치되고, 상기 제3 프레임(135)은 상기 제2 및 제4프레임(120,140) 사이에 배치될 수 있다. 상기 제1 및 제4프레임(120,140) 사이에는 하나, 2개 또는 3개 이상의 프레임이 배치될 수 있으며, 발광소자들의 개수에 따라 달라질 수 있다. 상기 각 프레임(120,130,135,140) 중 적어도 하나 또는 2개 이상은 적어도 하나의 관통홀을 포함할 수 있다. 상기 각 프레임(120,130,135,140) 중 적어도 하나는 복수의 관통홀을 구비할 수 있다. 상기 제1프레임(120)은 제1관통홀(TH1)을 포함하며, 상기 제2프레임(120)은 제2 및 제3관통홀(TH2,TH3)을 포함하며, 상기 제3프레임(135)은 제4 및 제5관통홀(TH4,TH5)을 포함하며, 상기 제4프레임(140)은 제6관통홀(TH6)을 포함할 수 있다. The second frame 130 may be disposed between the first and third frames 120 and 135 and the third frame 135 may be disposed between the second and fourth frames 120 and 140. One, two, or three or more frames may be disposed between the first and fourth frames 120 and 140, depending on the number of the light emitting devices. At least one or two or more of the frames 120, 130, 135, and 140 may include at least one through hole. At least one of the frames 120, 130, 135, and 140 may include a plurality of through holes. The first frame 120 includes a first through hole TH1 and the second frame 120 includes second and third through holes TH2 and TH3. Fourth through-holes TH4 and TH5, and the fourth frame 140 may include a sixth through-hole TH6.
상기 제1프레임(120)은 상기 제1발광소자(151)의 일부 영역과 수직 방향으로 중첩되며, 상기 제4프레임(140)은 상기 제3발광소자(153)의 일부 영역과 수직 방향으로 중첩될 수 있다. 상기 제1프레임(120)의 제1연장부(123)와 제4프레임(140)의 제2연장부(143)는 패키지 몸체(110A)의 제1측면(S1) 및 제2측면(S2)의 외측에 돌출될 수 있다. 상기 제1 및 제2연장부(123,143)는 Y 방향 길이가 패키지 몸체(110A)의 Y 방향의 길이의 1/2 이상으로 제공되어, 방열 효율 및 결합력이 강화될 수 있다. 상기 제1 및 제2연장부(123,143)에서 돌출된 영역의 너비는 X 방향으로 적어도 100㎛ 이상일 수 있다. The first frame 120 overlaps with a part of the first light emitting device 151 in the vertical direction and the fourth frame 140 overlaps with a part of the third light emitting device 153 in the vertical direction . The first extension portion 123 of the first frame 120 and the second extension portion 143 of the fourth frame 140 are connected to the first side surface S1 and the second side surface S2 of the package body 110A, As shown in Fig. The lengths of the first and second extension parts 123 and 143 in the Y direction are not less than 1/2 of the length of the package body 110A in the Y direction so that the heat radiation efficiency and the bonding force can be enhanced. The width of the region protruding from the first and second extension portions 123 and 143 may be at least 100 μm or more in the X direction.
상기 제2 프레임(130)은 제1 및 제2프레임부(131,132)와, 상기 제1 및 제2프레임부(131,132)를 연결해 주는 제1연결 프레임부(133)를 포함할 수 있다. 상기 제1 프레임부(131)는 제1프레임(120)과 Y 방향으로 대응되며, 상기 제2 프레임부(132)는 제1프레임(120)과 X 방향으로 대응될 수 있다. 상기 제1연결 프레임부(133)는 제1프레임(120)과 제3프레임(135)의 제3프레임부(136) 사이에 배치될 수 있다. 상기 제1 프레임부(131)와 상기 제1프레임(120)은 제1발광소자(151) 아래에 배치되고 제1 발광소자(151)와 전기적으로 연결될 수 있다. 상기 제2 프레임(130)은 제1 발광소자(151)와 제2발광소자(152)를 직렬로 연결시켜 줄 수 있다. 상기 제3 프레임(135)은 제3 및 제4프레임부(136,137)와, 제3 및 제4프레임부(136,137)를 연결해 주는 제2연결 프레임부(138)를 포함할 수 있다. 상기 제2연결 프레임부(138)는 제2 프레임(130)의 제2 프레임부(132)와 제4프레임(140) 사이에 배치될 수 있다. 상기 제3 프레임부(136)와 상기 제2 프레임(130)의 제2 프레임부(132)는 제2발광소자(152) 아래에 배치될 수 있고, 제2 발광소자(152)와 전기적으로 연결될 수 있다. 상기 제4 프레임부(137)와 제4프레임(140)은 제3발광소자(153) 아래에 배치되며 제3발광소자(153)와 전기적으로 연결될 수 있다. 상기 제3 프레임(135)은 제2 발광소자(152)와 제3 발광소자(153)를 직렬로 연결시켜 줄 수 있다. The second frame 130 may include first and second frame parts 131 and 132 and a first connection frame part 133 connecting the first and second frame parts 131 and 132. The first frame part 131 may correspond to the first frame 120 in the Y direction and the second frame part 132 may correspond to the first frame 120 in the X direction. The first connection frame part 133 may be disposed between the first frame 120 and the third frame part 136 of the third frame 135. The first frame part 131 and the first frame 120 may be disposed under the first light emitting device 151 and may be electrically connected to the first light emitting device 151. The second frame 130 may connect the first light emitting device 151 and the second light emitting device 152 in series. The third frame 135 may include a second connection frame portion 138 connecting the third and fourth frame portions 136 and 137 and the third and fourth frame portions 136 and 137. The second connection frame portion 138 may be disposed between the second frame portion 132 and the fourth frame 140 of the second frame 130. The third frame portion 136 and the second frame portion 132 of the second frame 130 may be disposed below the second light emitting device 152 and may be electrically connected to the second light emitting device 152 . The fourth frame part 137 and the fourth frame 140 may be disposed under the third light emitting device 153 and may be electrically connected to the third light emitting device 153. The third frame 135 may connect the second light emitting device 152 and the third light emitting device 153 in series.
상기 제2 및 제3관통홀(TH2,TH3) 사이의 연결 영역은 상기 제1연결 프레임부(133)이며, 상기 제4,5관통홀(TH4,TH5) 사이의 연결 영역은 상기 제2연결 프레임부(138)이며, 상기 제1 및 제2연결 프레임부(133,138)의 최소 폭이 상기 관통홀(TH1-TH6)의 하면의 최대 폭보다 큰 경우, 인접한 리세스와의 간섭이 발생될 수 있고, 관통홀(TH1-TH6)의 형성에 어려움이 있을 수 있다. 상기 제1 및 제2연결 프레임부(133,138)는 몸체(115)의 하면에 노출될 수 있다. 다른 예로서, 상기 제1 및 제2연결 프레임부(133,138)는 몸체(115)의 하면으로부터 이격될 수 있다. 상기 제1 및 제2연결 프레임부(133,138)는 수직 방향으로 상기 관통홀(TH1-TH6)의 깊이보다 작은 두께이거나, 프레임(120,130,135,140)의 두께보다 작은 두께를 가질 수 있다. 상기 프레임(120,130,135,140) 각각은 하나 또는 복수의 돌기가 제3측면(S3)과 제4측면(S4)에 돌출되고 몸체(115)와 결합될 수 있다. 상기 제2 및 제3 프레임(130,135)은 서로 동일한 형상을 가질 수 있다. 상기 제1 내지 제4 프레임(120,130,135,140) 각각은 상부에 상부 리세스(R51) 또는 단차 구조를 포함할 수 있다. 상기 상부 리세스(R51)의 깊이는 상기 프레임(120,130,135,140)의 두께의 40% 내지 60% 범위일 수 있어, 프레임(120,130,135,140)의 강도 저하를 방지하고 지지할 수 있는 범위로 형성될 수 있다. The connection region between the second and third through holes TH2 and TH3 is the first connection frame portion 133 and the connection region between the fourth and fifth through holes TH4 and TH5 is the connection region between the second connection When the minimum width of the first and second connection frame parts 133 and 138 is larger than the maximum width of the lower surface of the through holes TH1 to TH6, interference with the adjacent recesses may occur , It may be difficult to form the through holes TH1 to TH6. The first and second connection frame portions 133 and 138 may be exposed on the lower surface of the body 115. As another example, the first and second connection frame portions 133 and 138 may be spaced from the lower surface of the body 115. The first and second connection frame portions 133 and 138 may have a thickness smaller than the depth of the through holes TH1 to TH6 in the vertical direction or may have a thickness smaller than the thickness of the frames 120, 130, 135 and 140. Each of the frames 120, 130, 135 and 140 may have one or a plurality of protrusions protruding from the third side surface S3 and the fourth side surface S4 and coupled to the body 115. The second and third frames 130 and 135 may have the same shape. Each of the first to fourth frames 120, 130, 135 and 140 may include an upper recess R51 or a stepped structure on the upper portion. The depth of the upper recess R51 may be in the range of 40% to 60% of the thickness of the frames 120, 130, 135 and 140 so that the frames 120, 130, 135 and 140 can be prevented from lowering in strength.
상기 프레임(120,130,135,140) 각각에서 관통홀(TH1-TH6)의 영역과 중첩된 상부 영역은 상기 상부 리세스(R51)와의 최소 간격(D4)이 80㎛ 이상 예컨대, 80 내지 150㎛의 범위일 수 있다. 이에 따라 몸체(115)와 접촉되는 프레임 부분의 강성을 확보할 수 있고 관통홀(TH1-TH6)를 형성하고 사출할 때, 단차 구조나 리세스에 의해 프레임의 강성에 손해를 주는 것을 방지할 수 있다. The upper region overlapping the regions of the through holes TH1 to TH6 in each of the frames 120, 130, 135 and 140 may have a minimum distance D4 to the upper recess R51 of 80 mu m or more, for example, 80 to 150 mu m . Accordingly, rigidity of the frame portion contacting with the body 115 can be ensured, and when the through holes TH1 to TH6 are formed and injected, it is possible to prevent damage to the rigidity of the frame by the step structure or recess have.
상기 제2 관통홀(TH2)은 제2 프레임(130)의 제1프레임부(131), 제3관통홀(TH3)은 제2 프레임(130)의 제2 프레임부(132), 상기 제4관통홀(TH4)은 제3 프레임(135)의 제3프레임부(136), 및 제5관통홀(TH5)은 제3 프레임(135)의 제4프레임부(137)에 배치될 수 있다. 상기 제1 및 제2 관통홀(TH1,TH2), 상기 제3 및 제4관통홀(TH3,TH4) 및 상기 제5 및 제6관통홀(TH5,TH6)은 제1 내지 제3 발광소자(151,152,153)의 각 본딩부(51,52)와 수직 방향으로 중첩될 수 있다. 상기 관통홀(TH1-TH6) 각각에는 발광소자(151,152,153)의 도전돌기(51A,52A)가 삽입된 경우, 상기 도전부(321)와 접합될 수 있고 상기 도전부(321)의 크랙 발생을 억제하거나 크랙 경로를 증가시켜 줄 수 있다. 상기 관통홀(TH1-TH6), 상기 도전부(321) 및 상기 도전돌기(51A,52A)에 대한 상세한 구성은 실시 예(들)의 설명이나 구성을 선택적으로 적용하기로 한다. 상기 제1 관통홀(TH1)과 상기 제6관통홀(TH6)은 사선 방향으로 이격될 수 있으며, 관통홀들(TH1-TH6) 사이의 간격 중에서 최대 길이로 이격될 수 있다. 상기 관통홀(TH1-TH6)의 전체 개수는 상기 발광소자(151,152,153)의 개수의 2배일 수 있다. 상기 각 관통홀(TH1-TH6)의 상부 면적은 상기 각 본딩부(51,52)의 하면 면적의 30% 이상 예컨대, 30% 내지 98%의 범위를 가질 수 있다. 상기 관통홀(TH1-TH6)의 내 측면, 상기 도전부(321) 및 상기 도전돌기(51A,52A)의 구성은 실시 예(들)의 설명이나 구성을 선택적으로 참조하기로 한다. 상기 발광소자 패키지에 공급되는 구동 전압은 상기 각 발광소자(151,152,153) 내의 발광 셀의 개수에 따라 비례하여 증가될 수 있으며, 고 전압으로 공급할 수 있다. 이러한 고 전압의 발광소자 패키지는 디밍(Dimming) 조절이 가능하여, 발광되는 광의 밝기를 조절할 수 있다. The second through hole TH2 is formed in the first frame portion 131 of the second frame 130 and the third through hole TH3 is formed in the second frame portion 132 of the second frame 130, The through hole TH4 may be disposed in the third frame portion 136 of the third frame 135 and the fifth through hole TH5 may be disposed in the fourth frame portion 137 of the third frame 135. [ The first and second through holes TH1 and TH2, the third and fourth through holes TH3 and TH4 and the fifth and sixth through holes TH5 and TH6 are formed in the first through third light emitting devices 151, 152, 153) in the vertical direction. When the conductive protrusions 51A and 52A of the light emitting devices 151 and 152 are inserted into the through holes TH1 to TH6, the conductive protrusions 51A and 52A can be bonded to the conductive parts 321, Or increase the crack path. The detailed configuration of the through holes TH1 to TH6, the conductive portions 321 and the conductive protrusions 51A and 52A will be selectively applied to the description and the configuration of the embodiment (s). The first through hole TH1 and the sixth through hole TH6 may be spaced apart from each other in the diagonal direction and may be spaced apart from each other by a maximum length of the interval between the through holes TH1 through TH6. The total number of the through holes TH1 to TH6 may be two times the number of the light emitting devices 151, 152, and 153. The upper surface area of each of the through holes TH1 to TH6 may have a range of 30% or more, for example, 30% to 98% of the bottom surface area of each of the bonding portions 51 and 52. The configurations of the inner surfaces of the through holes TH1 to TH6, the conductive portions 321 and the conductive protrusions 51A and 52A will be described with reference to the description of the embodiment (s) selectively. The driving voltage supplied to the light emitting device package can be increased in proportion to the number of light emitting cells in the light emitting devices 151, 152, and 153, and can be supplied at a high voltage. Such a high-voltage light emitting device package is capable of adjusting the dimming, thereby adjusting the brightness of the emitted light.
도 13 내지 도 15와 같이, 복수의 리세스(R1,R2,R3)는 상기 몸체(115)의 상부에 제1 방향으로 배열되거나, 상기 발광소자(151,152,153)들이 배열되는 방향으로 배열될 수 있다. 제1리세스(R1)는 제1 프레임(120)과 제2 프레임(130)의 제1프레임부(131) 사이에 배치되며, 제2리세스(R2)는 제2 프레임(130)의 제2 프레임부(132)와 제3 프레임(135)의 제3프레임부(136) 사이에 배치될 수 있다. 제3리세스(R3)는 제3 프레임(135)의 제4프레임부(137)와 제4 프레임(140) 사이에 배치될 수 있다. 상기 제1연결 프레임부(133)는 상기 제1 및 제2리세스(R1,R2) 사이에 배치되며, 상기 제2연결 프레임부(138)는 상기 제2 및 제3리세스(R2,R3) 사이에 배치될 수 있다. 상기 제1리세스(R1)는 제1 및 제2 관통홀(TH1,TH2) 사이에 배치되며, 제2리세스(R2)는 제3 및 제4관통홀(TH3,TH4) 사이에 배치되며, 상기 제3리세스(R3)는 제5 및 제6관통홀(TH5,TH6) 사이에 배치될 수 있다. 상기 제1리세스(R1)는 상기 제1 관통홀(TH1)와 상기 제2 관통홀(TH2) 사이에 최단 거리를 갖는 가상선이 배치되고, 상기 가상선에 수직하는 방향으로 연장되고, 상기 제1리세스(R1)의 길이는 상기 제1리세스(R1)가 연장되는 방향의 길이이며 상기 발광소자(151,152,153)의 폭보다 작을 수 있다. 상기 제2 및 제3리세스(R2,R3)의 연장 방향 및 길이는 상기 제1리세스(R1)의 설명을 참조하기로 한다. As shown in FIGS. 13 to 15, the plurality of recesses R1, R2, and R3 may be arranged in a first direction on the body 115, or in a direction in which the light emitting devices 151, 152, and 153 are arranged . The first recess R 1 is disposed between the first frame 120 and the first frame portion 131 of the second frame 130 and the second recess R 2 is disposed between the first frame 120 and the second frame 130. 2 frame section 132 and the third frame section 136 of the third frame 135. [ The third recess R3 may be disposed between the fourth frame portion 137 and the fourth frame 140 of the third frame 135. [ The first connection frame part 133 is disposed between the first and second recesses R1 and R2 and the second connection frame part 138 is disposed between the second and third recesses R2 and R3 As shown in FIG. The first recess R1 is disposed between the first and second through holes TH1 and TH2 and the second recess R2 is disposed between the third and fourth through holes TH3 and TH4 And the third recess R3 may be disposed between the fifth and sixth through holes TH5 and TH6. The first recess (R1) may be formed by arranging a virtual line having a shortest distance between the first through hole (TH1) and the second through hole (TH2), extending in a direction perpendicular to the virtual line The length of the first recess R1 may be less than the width of the light emitting device 151, 152, 153 in the direction in which the first recess R1 extends. The extending direction and length of the second and third recesses R2 and R3 will be described with reference to the description of the first recess R1.
도 13 및 도 17을 참조하면, 제1 방향으로 각 리세스(R1,R2,R3)의 길이(B5)는 발광소자(151,152,153)의 폭(W6)보다 작을 수 있다. 상기 각 리세스(R1,R2,R3)의 길이(B5)가 발광소자(151,152,153)의 폭(W6)보다 작게 배치됨으로써, 각 리세스(R1,R2,R3)의 영역을 통한 광 손실을 줄여줄 수 있다. 제2방향으로 각 리세스(R1,R2,R3)의 폭(B6)은 상기 제1방향의 길이(B5)보다 작을 수 있다. 상기 폭(B6)은 Y 방향으로 인접한 두 프레임 사이의 간격(G3)보다 작을 수 있으며, 예컨대 간격(G3)의 70% 이하로 배치될 수 있다. 상기 각 리세스(R1,R2,R3)의 폭(B6)은 몸체(115)의 강성 저하를 방지할 수 있고 광 손실을 줄여줄 수 있다. 예로서, 상기 리세스(R1,R2,R3)의 깊이는 제1실시 예의 설명을 참조하기로 한다. 도 13 및 도 14와 같이, 서로 다른 발광소자(151,152,153) 아래에 배치된 리세스(R1,R2,R3) 간의 간격은 발광소자(151,152,153) 간의 간격(G1)보다 작을 수 있다. 제1수지(160)는 상기 몸체(115)와 상기 발광소자(151,152,153) 사이에 배치되며, 상기 제1 및 제2본딩부(51,52)에 접촉되고, 각 리세스(R1,R2,R3)에 배치될 수 있다. 상기 제1수지(160)는 제1실시 예의 설명을 참조하기로 한다. Referring to FIGS. 13 and 17, the length B5 of each of the recesses R1, R2, and R3 in the first direction may be smaller than the width W6 of the light emitting devices 151, 152, and 153. The length B5 of each of the recesses R1, R2 and R3 is smaller than the width W6 of the light emitting devices 151, 152 and 153 to reduce the light loss through the regions of the recesses R1, R2 and R3 You can give. The width B6 of each of the recesses R1, R2, and R3 in the second direction may be smaller than the length B5 in the first direction. The width B6 may be smaller than the gap G3 between two adjacent frames in the Y direction, for example, 70% or less of the gap G3. The width B6 of each of the recesses R1, R2, and R3 can prevent the lowering of the rigidity of the body 115 and reduce the light loss. As an example, the depths of the recesses (R1, R2, R3) will be referred to the description of the first embodiment. As shown in FIGS. 13 and 14, the gap between the recesses R1, R2, and R3 disposed below the different light emitting devices 151, 152, and 153 may be smaller than the gap G1 between the light emitting devices 151, 152, and 153. The first resin 160 is disposed between the body 115 and the light emitting devices 151, 152 and 153 and is in contact with the first and second bonding parts 51 and 52. Each of the recesses R1, As shown in FIG. The first resin 160 will be described with reference to the first embodiment.
상기 제1 및 제2연결 프레임부(133,138)의 하면은 상기 제2 및 제3 프레임(130,135)의 하면과 동일 평면 상에 배치되며, 상면은 상기 제2 및 제3 프레임(130,135)의 상면보다 낮게 배치될 수 있다. 상기 제1 및 제2연결 프레임부(133,138)은 직선 형상, 곡선 또는 각진 형상으로 연장될 수 있다. 상기 제1 및 제2연결 프레임부(133,138)의 너비는 상기 상기 제1 및 제2연결 프레임부(133,138)의 길이보다 작을 수 있으며, 예컨대 120㎛ 이상 예컨대, 120㎛ 내지 300㎛의 범위이거나, 150㎛ 내지 250㎛의 범위일 수 있다. 상기 제1 및 제2연결 프레임부(133,138)의 길이는 인접한 두 프레임부 사이의 간격이며 400㎛ 이상 예컨대, 400㎛ 내지 600㎛의 범위일 수 있다. 다른 예로서, 상기 제1 또는/및 제2연결 프레임부(133,138)는 중간에 개방된 오픈 영역을 포함할 수 있으며, 상기 오픈 영역은 상기 제1 또는/및 제2연결 프레임부(133,138)의 양 단부를 물리적으로 분리시켜 줄 수 있다. 상기 오픈 영역에 도전부를 제공할 경우, 분리된 제1 또는 제2연결 프레임부(138)는 서로 연결될 수 있으며, 도전부가 없는 경우, 전기적으로 분리시켜 줄 수 있다. 상기 제1 내지 제3발광소자(151,152,153) 각각은 서로 동일한 피크 파장을 발광하거나 서로 다른 피크 파장을 발광할 수 있다. 상기 각 프레임(120,130,135,140)과 상기 각 발광소자(151,152,153)의 본딩부(51,52)는 도전부에 의해 금속간 화합물층을 형성할 수 있다. The lower surfaces of the first and second connection frame portions 133 and 138 are disposed on the same plane as the lower surfaces of the second and third frames 130 and 135 and the upper surfaces thereof are connected to the upper surfaces of the second and third frames 130 and 135 Can be placed lower. The first and second connection frame portions 133 and 138 may extend in a straight line, a curved line, or an angled line. The width of the first and second connection frame portions 133 and 138 may be less than the length of the first and second connection frame portions 133 and 138 and may be in the range of 120 μm or more, And may range from 150 탆 to 250 탆. The length of the first and second connection frame portions 133 and 138 may be a distance between adjacent two frame portions and may be in a range of 400 m or more, for example, 400 m to 600 m. As another example, the first and / or second connection frame portions 133 and 138 may include an open region that is open in the middle, and the open region may be formed in the first and / or second connection frame portions 133 and 138 So that both ends can be physically separated. When the conductive portion is provided in the open region, the separated first or second connection frame portion 138 can be connected to each other and electrically disconnected if there is no conductive portion. Each of the first to third light emitting devices 151, 152, and 153 may emit the same peak wavelength or emit different peak wavelengths. The bonding portions 51 and 52 of each of the frames 120, 130, 135 and 140 and the light emitting devices 151 and 152 and 153 may form an intermetallic compound layer by conductive portions.
도 16과 같이, 제2수지(164)는 상기 발광소자(151,152,153)의 하부 둘레에서 제1 내지 제4 프레임(120,130,135,140)과 몸체(115) 상에 배치되고, 상기 발광소자(151,152,153)의 하면 및 측면 하부에 접촉될 수 있다. 상기 제2수지(164)는 상기 발광소자(151,152,153)의 발광 구조물(55)의 하면보다 낮게 배치되어, 상기 발광소자(151,152,153)로부터 측 방향으로 방출된 광을 반사시켜 줄 수 있다. 상기 제2수지(164)는 에폭시(epoxy) 계열, 실리콘(silicone) 계열, 에폭시 계열과 실리콘 계열의 물질을 포함하는 하이브리드(hybrid) 물질 중에서 적어도 하나를 포함할 수 있다. The second resin 164 is disposed on the first to fourth frames 120, 130, 135 and 140 around the lower portion of the light emitting devices 151, 152 and 153 and on the lower surface of the light emitting devices 151, 152, It can be brought into contact with the lower side surface. The second resin 164 may be disposed lower than the lower surface of the light emitting structure 55 of the light emitting devices 151, 152 and 153 to reflect light emitted laterally from the light emitting devices 151, 152 and 153. The second resin 164 may include at least one of epoxy, silicone, epoxy, and hybrid materials including a silicon-based material.
<제3실시 예>&Lt; Third Embodiment >
도 18 내지 도 20은 제3실시 예에 따른 발광소자 패키지의 도면들의 예이다. 제3실시 예의 설명에 있어서, 상기와 동일한 구성은 상기에 개시된 설명을 참조하며, 선택적으로 적용하기로 한다.18 to 20 are views showing examples of the light emitting device package according to the third embodiment. In the description of the third embodiment, the same configuration as that described above will be referred to and selectively applied to the above-described description.
도 18 내지 도 20을 참조하면, 실시 예에 따른 발광소자 패키지(200)는 복수의 프레임(220,230,240), 몸체(215), 복수의 발광소자(251,153)를 포함한다. 상기 패키지 몸체(210A)는 상기 캐비티(212)를 갖는 몸체(215) 상에 배치될 수 있다. 제1프레임(220)의 제1연장부(223) 및 제3프레임(240)의 제2연장부(243)는 제1측면(S1) 및 제2측면(S2)으로 연장될 수 있다. 상기 제2 프레임(230)은 제1 및 제2프레임부(232,234) 및 연결 프레임부(236)를 포함할 수 있다. 상기 제2 프레임(230)의 구성은 제2실시 예의 설명을 참조하기로 한다. 상기 제1프레임(220)의 제1 관통홀(TH11)과, 제2 프레임(230)의 제1프레임부(232)에 배치된 제2 관통홀(TH12), 상기 제2 프레임(230)의 제2 프레임부(234)에 배치된 제3관통홀(TH13), 및 제3프레임(240)에 배치된 제4관통홀(TH14) 각각에는 도전부(321)가 배치될 수 있다. 상기 각 프레임(220,230,240)과 상기 각 본딩부(51,52)는 금속간 화합물층에 의해 결합될 수 있다.18 to 20, a light emitting device package 200 according to an embodiment includes a plurality of frames 220, 230 and 240, a body 215, and a plurality of light emitting devices 251 and 153. The package body 210A may be disposed on the body 215 having the cavity 212. [ The first extension portion 223 of the first frame 220 and the second extension portion 243 of the third frame 240 may extend to the first side surface S1 and the second side surface S2. The second frame 230 may include first and second frame parts 232 and 234 and a connection frame part 236. The configuration of the second frame 230 will be described with reference to the description of the second embodiment. A first through hole TH11 of the first frame 220 and a second through hole TH12 disposed on the first frame portion 232 of the second frame 230 and a second through hole TH12 of the second frame 230, The conductive portion 321 may be disposed in each of the third through hole TH13 disposed in the second frame portion 234 and the fourth through hole TH14 disposed in the third frame 240. [ Each of the frames 220, 230 and 240 and each of the bonding portions 51 and 52 may be bonded by an intermetallic compound layer.
도 19의 (a)(b)와 같이, 상기 각 프레임(220,230,240)은 외측으로 돌출된 돌기(21,31,32,41) 및 단차 구조(225A,232A,245A)를 구비하여 몸체(215)와의 결합을 강화시켜 줄 수 있다. 상기 제1 프레임(220)과 제2 프레임(230)의 사이의 최소 간격(T2)은 회로 기판 상에서 발광소자 패키지가 본딩될 때, 솔더 페이스트의 확산에 따른 전기적인 간섭을 방지할 수 있다. 상부 리세스(225,245)는 캐비티 바닥에 노출될 수 있으며, 그 폭은 50㎛ 이상 예컨대, 50 내지 150㎛의 범위로 배치되어, 페이스트와 같은 도전부가 캐비티 측면으로 이동하는 것을 차단할 수 있다. As shown in FIGS. 19A and 19B, each of the frames 220, 230 and 240 includes protrusions 21, 31, 32 and 41 projecting outwardly and stepped structures 225A, 232A and 245A, Can be strengthened. The minimum interval T2 between the first frame 220 and the second frame 230 can prevent electrical interference due to diffusion of the solder paste when the light emitting device package is bonded on the circuit board. The upper recesses 225 and 245 may be exposed to the bottom of the cavity and may have a width in the range of 50 탆 or more, for example, 50 to 150 탆 to prevent the conductive part such as paste from moving to the side of the cavity.
상기 제1 및 제3프레임(220,240)의 상부에는 오목한 제1 및 제2하부 리세스(225,245)를 구비하여, 캐비티 바닥으로 연장될 수 있다. 상기 몸체(215)의 리세스(R5,R6,R7,R8)는 제1발광소자(251) 아래에 제1 및 제2리세스(R5,R6)와, 제2발광소자(253) 아래에 제3 및 제4리세스(R7,R8)을 포함할 수 있다. 상기 연결 프레임부(236)은 제2 및 제4리세스(R6,R8) 사이에 배치될 수 있다. 상기 제1 및 제2리세스(R5,R6) 사이의 거리(D5)와 제3 및 제4리세스(R7,R8) 사이의 거리는 발광소자(251,253)의 폭(W3)보다는 작을 수 있다. 상기 거리(D5)는 관통홀(TH11-TH14)의 상부 너비(W1)와 같거나 작을 수 있고, 상기 상부 너비(W1)의 1/2보다는 클 수 있다. 즉, 거리(D5)는 W1의 50% 이상 내지 100%의 범위일 수 있다. 상기 리세스(R5,R6,R7,R8), 상기 관통홀(TH11,TH12,TH13,TH14), 상기 도전부(321) 및 상기 도전돌기(51A,52A)에 대한 설명은 상기에 개시된 설명이나 구성을 적용할 수 있다. 또한 캐비티 바닥에는 제1수지(261) 및 제2수지가 배치될 수 있다. The upper and lower portions of the first and third frames 220 and 240 may have concave first and second lower recesses 225 and 245 and may extend to the bottom of the cavity. The recesses R5, R6, R7 and R8 of the body 215 are formed under the first and second recesses R5 and R6 below the first light emitting device 251 and below the second light emitting device 253 Third, and fourth recesses R7 and R8. The connection frame portion 236 may be disposed between the second and fourth recesses R6 and R8. The distance D5 between the first and second recesses R5 and R6 and the distance between the third and fourth recesses R7 and R8 may be smaller than the width W3 of the light emitting devices 251 and 253. [ The distance D5 may be equal to or less than the upper width W1 of the through holes TH11-TH14 and may be greater than 1/2 of the upper width W1. That is, the distance D5 may range from 50% or more to 100% of W1. The description of the recesses R5, R6, R7 and R8, the through holes TH11, TH12, TH13 and TH14, the conductive portions 321 and the conductive protrusions 51A and 52A is not explained in the above description Configuration can be applied. Also, the first resin 261 and the second resin may be disposed on the bottom of the cavity.
도 21은 도 20의 발광소자 패키지가 회로 기판에 배치된 광원 장치 또는 광원 모듈의 예이다. 일 예로서, 광원모듈에는 다른 실시 예(들)의 발광소자 패키지를 적용할 수 있다. 도 21 및 도 18을 참조하여 설명하면, 광원 모듈은 회로기판(501) 상에 하나 또는 복수의 발광소자 패키지(200)가 배치될 수 있다. 상기 회로기판(501)의 패드(541,542,543,544)는 발광소자 패키지(200)의 각 프레임(220,230,240)과 본딩층(531)으로 연결될 수 있다. 상기 회로 기판(501)의 각 패드(541,542,543,544)는 상기 프레임(220,230,240) 및 관통홀(TH11-TH14)과 수직 방향으로 중첩될 수 있다. 상기 본딩층(531)은 상기 프레임(220,230,240) 및/또는 각 관통홀(TH11-TH14) 내의 도전부(321)에 연결될 수 있다. 여기서, 상기 회로 기판(501)의 각 패드(541,542,543,544)는 상기 제1프레임(220), 상기 제2프레임(230)의 제1프레임부(232)와 제2프레임부(234)와, 제3프레임(240)의 하면 형상과 각각 대응되는 형상일 수 있다. 상기 회로 기판(501)의 패드(542,543)는 방열 패드이며 전원 단에 연결되지 않으며, 상기 제2프레임(230)의 제1프레임부(232)와 제2프레임부(234)에 연결되고 열을 전도하게 된다. 상기 방열 패드(532,533)는 발광소자(251,253)의 열 저항을 낮추어 줄 수 있다. 만약, 도 22의 (A)와 같이, 비교 예2는 플립 칩 아래에 배치된 상기 회로 기판(501)에 방열 패드가 없는 경우이며, 플립 칩의 열 출력 단에서의 열 저항(Rth0)에 비해 회로 기판의 열 전도 단에서의 열 저항(Rth2)이 더 높게 나타날 수 있다. 비교예 2에서는 상기 플립 칩 내에서의 열이 집중되어 칩이 열화될 수 있다. 비교 예1은 발광소자 패키지 내에 투광성 기판을 갖는 수평형 칩이 배치된 경우이며, 비교 예2의 열 저항보다는 낮게 나타나게 된다. 발명은 플립 칩 내에서의 열 저항이 상기 회로 기판의 방열 패드로 전도하여 회로 기판과의 접촉 단에서의 열 저항을 낮추어 줄 수 있다. 또한 발명은 플립 칩의 발광소자의 하부에 회로 기판(501)의 방열 패드(542,543)를 제공하여, 도 22의 (B)와 같이 플립 칩의 열 출력 단의 열 저항(Rth0) 보다는 회로 기판(501)의 열 전도 단에서의 열 저항(Rth3)을 더 낮추어줄 수 있다. 발명은 복수의 발광 소자가 연결된 패키지에서 회로 기판의 방열 패드(532,533)를 배치하여, 균일한 방열 특성을 제공할 수 있다. 또한 낮은 열 저항을 통해 접합 저항의 감소, 동작 신뢰성 개선, 동작에 따른 휘도 변화를 줄이고, 마운트 작업 진행이 용이할 수 있다. Fig. 21 shows an example of a light source device or a light source module in which the light emitting device package of Fig. 20 is arranged on a circuit board. As one example, the light emitting device package of another embodiment (s) can be applied to the light source module. Referring to FIGS. 21 and 18, one or a plurality of light emitting device packages 200 may be disposed on the circuit board 501 of the light source module. The pads 541, 542, 543 and 544 of the circuit board 501 may be connected to the frames 220, 230 and 240 of the light emitting device package 200 by a bonding layer 531. Each of the pads 541, 542, 543 and 544 of the circuit board 501 may overlap the frames 220, 230 and 240 and the through holes TH11 to TH14 in the vertical direction. The bonding layer 531 may be connected to the conductive parts 321 in the frames 220, 230 and 240 and / or through holes TH11 to TH14. Each of the pads 541, 542, 543 and 544 of the circuit board 501 includes the first frame 220, the first frame portion 232 and the second frame portion 234 of the second frame 230, And may have a shape corresponding to the bottom shape of the frame 240, respectively. The pads 542 and 543 of the circuit board 501 are heat dissipation pads and are not connected to the power terminal and are connected to the first frame part 232 and the second frame part 234 of the second frame 230, I will preach. The heat dissipation pads 532 and 533 can lower the thermal resistance of the light emitting devices 251 and 253. 22 (A), Comparative Example 2 is a case where there is no heat radiation pad on the circuit board 501 disposed under the flip chip, and compared with the thermal resistance Rth0 at the thermal output end of the flip chip The thermal resistance (Rth2) at the heat conduction end of the circuit board may be higher. In Comparative Example 2, heat is concentrated in the flip chip, and the chip may be deteriorated. Comparative Example 1 is a case where a horizontal chip having a light-transmitting substrate is disposed in a light emitting device package and is lower than the thermal resistance of Comparative Example 2. The invention can reduce the thermal resistance at the contact end with the circuit board by conducting the heat resistance in the flip chip to the heat radiation pad of the circuit board. The invention also provides heat sinks 542 and 543 of the circuit board 501 below the light emitting device of the flip chip so that the thermal resistance Rth0 of the thermal output end of the flip chip as shown in FIG. The thermal resistance (Rth3) at the heat conduction end of the heat sink (501) can be further lowered. According to the invention, the heat radiation pads 532 and 533 of the circuit board are disposed in a package to which a plurality of light emitting elements are connected, thereby providing uniform heat dissipation characteristics. In addition, the low thermal resistance can reduce the junction resistance, improve the reliability of operation, reduce the luminance change due to the operation, and facilitate the mounting operation.
<제4실시 예><Fourth Embodiment>
도 23 내지 도 27은 발명의 제4실시 예에 따른 발광소자 패키지의 예이다. 제4실시 예의 구성은 제1 내지 제3실시 예의 구성을 참조하며 선택적으로 적용될 수 있다.23 to 27 show an example of a light emitting device package according to the fourth embodiment of the present invention. The configuration of the fourth embodiment can be selectively applied with reference to the configurations of the first to third embodiments.
도 23 내지 도 27을 참조하면, 발광소자 패키지(400)는 몸체(410), 금속부(411B,413B) 및 발광소자(420)를 포함할 수 있다. 상기 몸체(410)는 제1몸체(415)와 제2몸체(410A)를 포함할 수 있으며, 상기 제2 몸체(410A)는 제1 몸체(415)의 상부 둘레에 배치될 수 있으며, 경사진 측면(432)를 갖는 캐비티(402)를 제공할 수 있다. 제1 몸체(415)와 제2 몸체(410A)는 결합 구조를 갖고 결합될 수 있다. 예로서, 상기 몸체(410)는 절연성 수지 또는 열 가소성 수지로 형성될 수 있다. 상기 몸체(410)는 상면 또는 캐비티(402)의 바닥에 금속 프레임이 제거된 구조이므로, 금속 프레임을 갖는 구조에 비해 몸체 재질의 선택의 폭이 넓을 수 있다. 상기 몸체(410)와 금속 프레임 예컨대, 리드 프레임과 일체로 사출하지 않기 때문에, 연결부의 두께는 상기 리드 프레임의 두께보다 얇게 제공될 수 있다. 상기 리드 프레임과 사출되지 않는 상기 몸체(410)는 관통홀의 위치 변경, 캐비티(402)의 형상, 몸체(410)의 사이즈, 또는 패키지 사이즈에 대한 설계 변경이 용이할 수 있다. 23 to 27, the light emitting device package 400 may include a body 410, metal parts 411B and 413B, and a light emitting device 420. Referring to FIG. The body 410 may include a first body 415 and a second body 410A and the second body 410A may be disposed around the upper portion of the first body 415, A cavity 402 having a side surface 432 can be provided. The first body 415 and the second body 410A may be coupled to each other with a coupling structure. For example, the body 410 may be formed of an insulating resin or a thermoplastic resin. Since the body 410 has a structure in which the metal frame is removed from the upper surface or the bottom of the cavity 402, the selection of the material of the body can be broader than the structure having the metal frame. Since the body 410 is not integrally formed with the metal frame, for example, the lead frame, the thickness of the connecting portion can be provided to be thinner than the thickness of the lead frame. The body 410 which is not injected with the lead frame can easily change the design of the position of the through hole, the shape of the cavity 402, the size of the body 410, or the package size.
상기 몸체(410)의 두께는 몸체 하면에서 제2몸체 상면까지의 간격일 수 있으며, 400㎛ 이상 예컨대, 400 내지 800㎛의 범위일 수 있다. 상기 몸체(410)의 두께는 제1몸체(415)의 두께(t3)과 상기 제2몸체(410A)의 두께의 합일 수 있으며, 상기 제2몸체(410A)의 두께는 상기 발광소자(420)의 두께 이상일 수 있다. 여기서, 상기 제1몸체(415)의 두께(t2) 또는 상기 발광소자(420)과 상기 몸체 하면 사이의 두께(t2) 또는 간격은 400㎛ 이하 예컨대, 80 내지 400㎛의 범위 또는 100 내지 300㎛의 범위로 제공될 수 있다. 상기 두께(t2)는 상기 범위보다 얇은 경우, 몸체의 강성이 저하될 수 있고 광의 손실이 발생될 수 있으며, 상기 범위보다 큰 경우 관통홀의 크기가 증가되고 방열 효율이 저하될 수 있다. 상기 제2몸체(410A)의 상면 높이는 광의 지향각 분포를 위해 상기 발광소자(420)의 상면과 같거나 더 높게 배치될 수 있다. 다른 예는 제2몸체(410A)는 상기 제1몸체(415)로부터 제거될 수 있으며, 이 경우, 패키지는 130도 이상의 광 지향각 분포를 가질 수 있다. The thickness of the body 410 may be a distance from a bottom surface of the body to an upper surface of the second body, and may be 400 m or more, for example, 400 to 800 m. The thickness of the body 410 may be the sum of the thickness t3 of the first body 415 and the thickness of the second body 410A and the thickness of the second body 410A may be the same as the thickness of the light emitting device 420. [ Or more. The thickness t2 of the first body 415 or the thickness t2 or interval between the light emitting device 420 and the bottom surface of the body may be in the range of 400 탆 or less such as 80-400 탆 or 100-300 탆 Lt; / RTI &gt; When the thickness t2 is thinner than the above range, rigidity of the body may be lowered and light loss may occur. If the thickness t2 is larger than the above range, the size of the through hole may be increased and heat dissipation efficiency may be lowered. The height of the upper surface of the second body 410A may be the same as or higher than the upper surface of the light emitting device 420 for directing angle distribution of light. In another example, the second body 410A may be removed from the first body 415, in which case the package may have a light-directed angular distribution of greater than 130 degrees.
상기 몸체(410)는 서로 이격된 제1 및 제2관통홀(TH41,TH42)을 포함할 수 있으며, 상기 제1 및 제2관통홀(TH41,TH42)은 제1몸체(415)의 상면에서 하면을 관통할 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)은 캐비티(402)의 바닥에서 상기 제1몸체(415)의 하면까지 관통될 수 있다. 여기서, 상기 제1 및 제2관통홀(TH41,TH42)과 측면들(S1,S2,S3,S4) 사이의 몸체 내에는 금속 프레임이 없이 제공되므로, 금속 프레임과 몸체 재질 사이의 계면 분리로 인한 문제를 방지할 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)의 상부 영역의 폭 또는 면적은 제1 및 제2관통홀(TH41,TH42)의 하부 영역의 폭 또는 면적에 비해 작거나 같게 제공될 수 있다. 상기 제1 및 제2 관통홀(TH41,TH42)는 하부 영역에서 상부 영역으로 가면서 폭이 점차적으로 작아지는 경사진 형태로 제공될 수 있다. 상기 제1 및 제2 관통홀(TH41, TH42)의 내면은 수직한 면이거나, 경사진 면 또는 곡면 중에서 적어도 하나 또는 둘 이상을 포함할 수 있다. 예컨대, 도 25 및 도 26과 같이, 상기 제1 및 제2 관통홀(TH41,TH42)은 둘레에 경사진 면을 포함할 수 있다. The body 410 may include first and second through holes TH41 and TH42 spaced from each other and the first and second through holes TH41 and TH42 may be formed on the upper surface of the first body 415 It can penetrate the lower surface. The first and second through holes TH41 and TH42 may penetrate from the bottom of the cavity 402 to the lower surface of the first body 415. [ Since the body between the first and second through holes TH41 and TH42 and the side surfaces S1, S2, S3 and S4 is provided without a metal frame, the interface between the metal frame and the body material The problem can be prevented. The width or area of the upper region of the first and second through holes TH41 and TH42 may be provided to be smaller or equal to the width or area of the lower region of the first and second through holes TH41 and TH42. The first and second through holes TH41 and TH42 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. The inner surfaces of the first and second through holes TH41 and TH42 may be a vertical surface, or may include at least one or two or more of inclined surfaces or curved surfaces. For example, as shown in FIGS. 25 and 26, the first and second through holes TH41 and TH42 may include a sloped surface.
상기 제1 몸체(415)의 하면 영역에서 제1 관통홀(TH41)와 제2 관통홀(TH42) 사이의 간격은 400㎛ 내지 600㎛로 제공될 수 있다. 상기 제1 및 관통홀(TH41,TH42)의 깊이는 제1 몸체(415)의 두께(t3)와 동일할 수 있다. 상기 몸체(410)의 제1 및 제2관통홀(TH41,TH42)의 깊이는 400㎛ 이하 예컨대, 80 내지 400㎛의 범위 또는 100 내지 300㎛의 범위로 제공될 수 있다. 여기서, 상기 제1몸체(415)의 두께(t3)는 400㎛ 이하 예컨대, 80 내지 400㎛의 범위 또는 100 내지 300㎛의 범위로 제공될 수 있다. 상기 제1몸체(415)의 제1 및 제2관통홀(TH41,TH42)의 깊이는 상기 제1몸체(415)의 두께와 같거나 두꺼울 수 있다. 상기 제1몸체(415)의 두께는 상기 연결부(411,413)의 두께 즉, 관통홀(TH41,TH42)에서의 수평 방향 두께보다 클 수 있다. 상기 발광소자(420)의 하부에 배치된 상기 몸체(410)의 상면 및 하면 사이의 간격은 상기 연결부(411,413)의 두께 즉, 관통홀에서의 수평 방향 두께보다 클 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)의 깊이는 상기 연결부(411,413)의 두께보다 클 수 있다. 다른 예로서, 상기 연결부(411,413)는 상기 제1 및 제2관통홀(TH41,TH42)의 상면으로 연장될 수 있다. 예컨대, 제1금속부(411B)는 제1몸체(415)의 하면, 상기 제1관통홀(TH41)의 내측면 및 상기 제1본딩부(421)의 하면에 배치될 수 있다. 제2금속부(413B)는 제1몸체(415)의 하면, 상기 제2관통홀(TH42)의 내측면 및 상기 제2본딩부(422)의 하면에 배치될 수 있다. 이때 상기 제1 및 제2관통홀(TH41,TH42)의 상면은 상기 연결부(411,413)에 의해 개방되지 않을 수 있다.The distance between the first through hole TH41 and the second through hole TH42 in the lower surface area of the first body 415 may be 400 탆 to 600 탆. The depth of the first and the through holes TH41 and TH42 may be the same as the thickness t3 of the first body 415. [ The depths of the first and second through holes TH41 and TH42 of the body 410 may be in the range of 400 탆 or less, for example, in the range of 80 to 400 탆 or in the range of 100 to 300 탆. Here, the thickness t3 of the first body 415 may be 400 탆 or less, for example, 80-400 탆 or 100-300 탆. The depth of the first and second through holes TH41 and TH42 of the first body 415 may be equal to or thicker than the thickness of the first body 415. [ The thickness of the first body 415 may be greater than the thickness of the connection portions 411 and 413, that is, the horizontal thickness of the through holes TH41 and TH42. The distance between the upper surface and the lower surface of the body 410 disposed under the light emitting device 420 may be greater than the thickness of the connecting portions 411 and 413, that is, the thickness in the horizontal direction in the through hole. The depths of the first and second through holes TH41 and TH42 may be greater than the thickness of the connecting portions 411 and 413. As another example, the connection portions 411 and 413 may extend to the upper surfaces of the first and second through holes TH41 and TH42. For example, the first metal part 411B may be disposed on the lower surface of the first body 415, the inner surface of the first through hole TH41, and the lower surface of the first bonding part 421. [ The second metal portion 413B may be disposed on the lower surface of the first body 415, the inner surface of the second through hole TH42, and the lower surface of the second bonding portion 422. [ At this time, the upper surfaces of the first and second through holes (TH41, TH42) may not be opened by the connecting portions (411, 413).
상기 제 1 및 제2관통홀(TH41,TH42)은 상기 발광소자(420)의 영역과 수직 방향으로 중첩된 영역에 배치될 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)은 탑뷰 형상이 원 형상, 타원 형상, 다각형 형상, 직선과 곡선을 갖는 비정형 형상 중 적어도 하나를 포함할 수 있다. 상기 제 1 및 제2관통홀(TH41,TH42)의 상부 길이는, 제1방향과 제2방향이 동일한 길이로 제공되거나, 어느 한 방향의 길이가 더 길게 제공될 수 있다. 상기 제 1 및 제2관통홀(TH41,TH42)의 하부 길이는, 제1방향과 제2방향이 동일한 길이로 제공되거나, 어느 한 방향의 길이가 더 길게 제공될 수 있다. The first and second through holes TH41 and TH42 may be disposed in a region overlapping with the region of the light emitting device 420 in the vertical direction. The first and second through holes TH41 and TH42 may include at least one of a top view shape, a circular shape, an ellipse shape, a polygonal shape, and an irregular shape having a straight line and a curved line. The upper and lower lengths of the first and second through holes TH41 and TH42 may be provided with the same length in the first direction and the second direction or may have a longer length in either one direction. The bottom lengths of the first and second through holes TH41 and TH42 may be provided with the same length in the first direction and the second direction or may be provided with a longer length in either one direction.
상기 제1 및 제2관통홀(TH41,TH42) 각각은 상기 발광소자(420)의 제1 및 제2본딩부(421,422) 아래에서 하나 또는 복수로 배치될 수 있다. 제1 및 제2관통홀(TH41,TH42)은 상부 형상과 하부 형상이 동일하거나, 다를 수 있다. 제1 및 제2관통홀(TH41,TH42)는 상부 형상과 하부 형상이 대칭형상이거나 비 대칭 형상일 수 있다. 제1 및 제2관통홀(TH41,TH42)은 제1방향과 제2방향 중 적어도 한 방향에서 상부 형상의 중심과 하부 형상의 중심이 동일한 수직 직선 상에 배치되거나, 서로 다른 수직한 직선 상에 배치될 수 있다. 예컨대, 도 24와 같이, 제1 및 제2관통홀(TH41,TH42)의 상부 및 하부 형상이 서로 다르거나, 제1방향으로 상부 및 하부의 중심 위치가 서로 다를 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)은 제2방향으로 상부 및 하부의 중심 위치가 서로 다를 수 있다. 상기 제1 및 제2 관통홀(TH41,TH42)은 상기 발광소자(420)의 제1 및 제2본딩부(421,422) 아래에 배치될 있으며, 도전부가 배치될 수 있다. The first and second through holes TH41 and TH42 may be disposed under the first and second bonding portions 421 and 422 of the light emitting device 420, respectively. The first and second through holes TH41 and TH42 may be the same or different in the upper shape and the lower shape. The first and second through holes TH41 and TH42 may have a symmetrical shape or an asymmetrical shape in an upper shape and a lower shape. The first and second through holes TH41 and TH42 may be disposed on the same vertical straight line with the center of the upper shape and the center of the lower shape in at least one direction of the first direction and the second direction, . For example, as shown in FIG. 24, the upper and lower shapes of the first and second through holes TH41 and TH42 may be different from each other, or the center positions of the upper and lower portions may be different from each other in the first direction. The first and second through holes TH41 and TH42 may have different center positions of the upper and lower portions in the second direction. The first and second through holes TH41 and TH42 are disposed under the first and second bonding portions 421 and 422 of the light emitting device 420 and the conductive portion may be disposed.
도 25와 같이, 상기 발광소자(420)는 제1 및 제2 본딩부(421,422) 및 발광 구조물(423)을 포함할 수 있다. 상기 발광소자(420)는 기판(424)을 포함할 수 있다. 상기한 발광소자(420)의 상세 구성은 상기에 개시된 실시 예의 설명을 참조하기로 한다. 상기 발광소자(420)는 캐비티(402) 내에 배치될 수 있다. 상기 제1 및 제2본딩부(421,422)는 상기에 개시된 실시 예(들)의 설명을 참조하기로 한다. 상기 제1 및 제2본딩부(421,422)의 하부에는 몸체 바닥 방향으로 돌출된 도전 돌기가 배치될 수 있으며, 상기 도전 돌기의 높이 또는 두께는 상기에 개시된 실시 예의 설명을 포함할 수 있다. 상기 발광소자(420)는 내부에 하나 또는 복수의 발광 셀을 포함할 수 있다. 몸체(410)과 상기 발광소자(420) 사이의 영역에는 소정의 갭(Gap)이 배치되며, 상기 갭에는 제1수지(460)가 배치될 수 있다. 상기 제1수지(460)는 상기 발광소자(420)를 상기 몸체(410)에 부착시켜 주어, 상기 발광소자(420)의 유동이나 틸트를 방지할 수 있다. As shown in FIG. 25, the light emitting device 420 may include first and second bonding portions 421 and 422 and a light emitting structure 423. The light emitting device 420 may include a substrate 424. The detailed configuration of the light emitting device 420 will be described with reference to the description of the embodiments disclosed above. The light emitting device 420 may be disposed in the cavity 402. The first and second bonding portions 421 and 422 will be described with reference to the description of the embodiment (s) disclosed above. A conductive protrusion protruding toward the bottom of the body may be disposed below the first and second bonding portions 421 and 422. The height or thickness of the conductive protrusion may include the description of the embodiments described above. The light emitting device 420 may include one or more light emitting cells. A predetermined gap may be disposed in a region between the body 410 and the light emitting device 420 and a first resin 460 may be disposed in the gap. The first resin 460 may attach the light emitting device 420 to the body 410 to prevent the light emitting device 420 from flowing or tilting.
도 23 내지 도 24를 참조하면, 상기 제1 및 제2관통홀(TH41,TH42)은 Y 방향의 길이가 X 방향의 폭과 동일하거나 더 클 수 있다. 예컨대, 상기 제1 및 제2본딩부(421,422) 각각의 하면 면적은 상기 제1 및 제2관통홀(TH41,TH42)의 상면 면적보다 클 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)은 발광소자(420)의 두 본딩부(421,422)와 중첩되는 방향(X)과 동일한 방향의 폭이 두 본딩부(421,422)가 중첩되지 않는 방향(Y)의 길이보다 작을 수 있다. 상기 제1 및 제2관통홀(TH41,TH42) 각각은 상면 중심과 하면 중심이 같은 중심에 배치되거나, 서로 어긋나게 배치될 수 있다. 도 24와 같은 구조에서는 제1 및 제2관통홀(TH41,TH42)의 상면과 하면의 중심이 서로 다를 수 있다. 이 경우, 두 관통홀(TH41,TH42)의 상면 중심 간의 직선 거리는 하면 중심 간의 직선 거리보다 더 작을 수 있다. 23 to 24, the lengths of the first and second through holes TH41 and TH42 in the Y direction may be equal to or larger than the width in the X direction. For example, the bottom surface area of each of the first and second bonding portions 421 and 422 may be larger than the top surface area of the first and second through holes TH41 and TH42. The first and second through holes TH41 and TH42 are formed in the same direction as the direction X in which the two bonding portions 421 and 422 of the light emitting device 420 are overlapped with each other in a direction in which the two bonding portions 421 and 422 do not overlap (Y). Each of the first and second through holes TH41 and TH42 may be disposed at the center of the top surface and the center of the bottom surface and may be disposed to be shifted from each other. In the structure as shown in FIG. 24, the centers of the top and bottom surfaces of the first and second through holes TH41 and TH42 may be different from each other. In this case, the straight distance between the centers of the top surfaces of the two through holes TH41 and TH42 may be smaller than the straight distance between the bottom center and the bottom center.
상기 제1연결부(411)는 상기 제1관통홀(TH41)의 표면과 상기 몸체(410)의 바닥 일부에 배치될 수 있다. 상기 제2연결부(413)는 상기 제2관통홀(TH42)의 표면과 상기 몸체(410)의 바닥 일부에 배치될 수 있다. 제1연결부(411)와 제2연결부(413)는 물리적으로 분리되거나, 수직 방향으로 중첩되지 않게 배치될 수 있다. 상기 제1연결부(411)는 상기 제1관통홀(TH41)의 표면 전체에 배치될 수 있으며, 내부에 홀이 제공될 수 있다. 상기 제2연결부(413)는 상기 제2관통홀(TH42)의 표면 전체에 배치될 수 있으며, 내부에 홀이 제공될 수 있다. 상기 제1 및 제2연결부(411,413)의 상단은 상기 제1 및 제2관통홀(TH41,TH42)의 상면에 노출될 수 있으며, 몸체(410)의 상면과 같은 평면 상에 배치될 수 있다. The first connection portion 411 may be disposed on a surface of the first through hole TH41 and a bottom portion of the body 410. [ The second connection part 413 may be disposed on the surface of the second through hole TH42 and a part of the bottom of the body 410. [ The first connection portion 411 and the second connection portion 413 may be physically separated or arranged so as not to overlap in the vertical direction. The first connection portion 411 may be disposed on the entire surface of the first through hole TH41 and may be provided with a hole therein. The second connection portion 413 may be disposed on the entire surface of the second through hole TH42 and may be provided with a hole therein. The upper ends of the first and second connection portions 411 and 413 may be exposed on the upper surfaces of the first and second through holes TH41 and TH42 and may be disposed on the same plane as the upper surface of the body 410. [
도 25와 같이, 상기 제1 및 제2연결부(411,413)의 두께(t4)는 상기 제1관통홀(TH41)의 상부 폭 또는 제1 및 제2방향의 폭 중 작은 폭의 1/2 미만으로 배치될 수 있으며, 이 경우 내부 홀이 제공될 수 있다. 상기 제1연결부(411)와 상기 제2연결부(413)의 합 두께는 상기 제 1 또는 제2관통홀(TH41)의 제1 및 제2방향의 상부 폭보다 작을 수 있다. 상기 제1 및 제2연결부(411,413)는 동일한 두께(t4)일 수 있으며, 상기 두께(t4)는 5 ㎛ 이하 예컨대, 2 내지 5 ㎛의 범위일 수 있다. 상기 두께(t4)가 상기 범위보다 크면 열 전도율의 개선이나 전기 전도 특성의 개선이 미미하며, 상기 범위보다 작으면 방열 효율이나 전기 전도특성이 저하될 수 있다. 상기 제1 및 제2연결부(411,413)는 상기 몸체의 하면에 증착 공정, 또는 도금 공정을 통해 형성될 수 있다. 상기 제1 및 제2연결부(411,413)의 두께(t4)는 몸체(410)의 상면과 하면 사이의 두께(t3)보다 작을 수 있다. 상기 제1 및 제2금속부(411B,413B)의 두께는 상기 두께(t4)일 수 있다. 상기 두께(t4)는 두께(t3)의 1/30 이하 예컨대, 1/30 내지 1/400 이하일 수 있다. 상기 두께(t4,t3)들의 비율(t4:t3)은 1:30 내지 1:400의 범위일 수 있다. 이는 상기 몸체(410)의 표면에 상기 연결부(411,413)를 증착 공정 또는 도금 공정을 통해 형성시켜 주어, 얇은 두께로 제공될 수 있다. 25, the thickness t4 of the first and second connection portions 411 and 413 is less than half of the width of the upper portion of the first through hole TH41 or the width of the first and second directions And in this case, an inner hole can be provided. The total thickness of the first connection portion 411 and the second connection portion 413 may be smaller than the top width of the first or second through hole TH41 in the first and second directions. The first and second connection portions 411 and 413 may have the same thickness t4 and the thickness t4 may be in a range of 5 占 퐉 or less, for example, 2 to 5 占 퐉. If the thickness t4 is larger than the above range, the improvement of the thermal conductivity and the improvement of the electrical conduction property are insignificant. If the thickness t4 is smaller than the above range, the heat dissipation efficiency and the electrical conduction characteristic may be deteriorated. The first and second connection portions 411 and 413 may be formed on the lower surface of the body through a deposition process or a plating process. The thickness t4 of the first and second connection portions 411 and 413 may be smaller than the thickness t3 between the upper surface and the lower surface of the body 410. [ The thickness of the first and second metal portions 411B and 413B may be the thickness t4. The thickness t4 may be 1/30 or less, for example, 1/30 to 1/400 or less of the thickness t3. The ratio (t4: t3) of the thicknesses t4 and t3 may range from 1:30 to 1: 400. The connection portions 411 and 413 may be formed on the surface of the body 410 through a deposition process or a plating process to provide a thin thickness.
상기 제1연결부(411) 및 상기 제2연결부(413)는 금속으로 제공될 수 있다. 상기 제1 및 제2연결부(411,413)은 예컨대, 구리(Cu), 티타늄(Ti), 니켈(Ni), 금(Au), 크롬(Cr), 탄탈늄(Ta), 백금(Pt), 주석(Sn), 은(Ag) 중에서 선택될 수 있으며, 단층 또는 다층으로 형성될 수 있다. 상기 제1연결부(411) 및 상기 제2연결부(413)는 다층으로서, 상기 몸체(410)에 접촉된 제1층 및 상기 제1층 아래의 제2층을 포함할 수 있으며, 상기 제1층은 Ti, Cr, Ta, Pt 중 적어도 하나를 포함하며, 상기 제2층은 Au, Ag, Cu 중 적어도 하나를 포함할 수 있다. The first connection part 411 and the second connection part 413 may be made of metal. The first and second connection portions 411 and 413 may be formed of a material such as copper, titanium, nickel, gold, chromium, tantalum, platinum, (Sn), and silver (Ag), and may be formed as a single layer or a multilayer. The first connection portion 411 and the second connection portion 413 may be multilayered and may include a first layer contacting the body 410 and a second layer below the first layer, May include at least one of Ti, Cr, Ta, and Pt, and the second layer may include at least one of Au, Ag, and Cu.
발명은 프레임과 몸체를 일체로 사출하지 않고 있어, 발광소자 하부에 배치된 프레임과 몸체 결합 시 두 물질 간의 열 팽창 계수의 차이에 따른 문제를 해결할 수 있다. 또한 몸체(410)에 미리 제공된 관통홀(TH41,TH42)의 표면에 금속을 이용하여 증착 공정 또는 도금 공정을 수행함으로써, 상기 연결부(411,413)의 두께를 얇은 두께로 제공할 수 있다. 다른 예로서, 상기 제1 및 제2연결부(411,413) 각각은 상기 제1 및 제2관통홀(TH41,TH42)의 표면 일부에 배치될 수 있다. 상기 제1연결부(411)는 상기 제1관통홀(TH41)의 표면 중에서 제1측면(S1)과 인접한 영역에 배치되며 다른 영역은 몸체 표면이 노출될 수 있다. 상기 제2연결부(413)는 상기 제2관통홀(TH42)의 표면 중에서 제2측면(S2)에 더 인접한 영역에 배치될 수 있고, 다른 표면에는 몸체 표면이 노출될 수 있다. The present invention does not inject the frame and the body integrally, so that it is possible to solve the problem caused by the difference in the coefficient of thermal expansion between the two materials when the body and the frame are arranged under the light emitting element. Also, the thickness of the connection portions 411 and 413 can be thinned by performing a deposition process or a plating process on the surfaces of the through holes TH41 and TH42 previously provided in the body 410 using metal. As another example, each of the first and second connection portions 411 and 413 may be disposed on a part of the surface of the first and second through holes TH41 and TH42. The first connection portion 411 may be disposed in a region adjacent to the first side S1 of the first through hole TH41 and the body region may be exposed in another region. The second connection portion 413 may be disposed in a region of the second through hole TH42 that is closer to the second side surface S2 and the body surface may be exposed to the other surface.
도 24 및 도 25과 같이, 상기 몸체(410)의 바닥에 배치된 상기 제1금속부(411B)의 하면 면적은 상기 몸체(410)의 바닥 면적의 1/2 이하 예컨대, 1/2 내지 1/5 범위일 수 있다. 상기 제2금속부(413B)의 하면 면적은 상기 몸체(410)의 바닥 면적의 1/2 이하 예컨대, 1/2 내지 1/5 범위일 수 있다. 상기 제1금속부(411B)는 상기 제1관통홀(TH41)을 기준으로 상기 제1관통홀(TH41)과 상기 몸체(410)의 제1측면(S1) 사이의 몸체 바닥의 일부 또는 전체에 배치될 수 있다. 다른 예로서, 상기 몸체(410)의 제1측면(S1)에는 상기 제1금속부(411B)의 일부가 연장될 수 있다. 상기 제2금속부(413B)의 일부는 몸체(410)의 제2측면(S2)으로 연장될 수 있다. 상기 제1금속부(411B)는 상기 몸체(410)의 제1측면(S1), 제3 및 제4측면(S3,S4) 중 적어도 하나 또는 모두의 하부에 노출될 수 있다. 상기 제2금속부(413B)는 상기 몸체(410)의 제2측면(S1), 제3 및 제4측면(S3,S4) 중 적어도 하나 또는 모두의 하부에 노출될 수 있다. 상기 제1금속부(411B) 및 제2금속부(413B)는 몸체(410)의 측면들 중 적어도 1측면 또는 2측면 이상과 같은 수직 평면 상에 배치될 수 있다. 상기 제1 및 제2금속부(411B,413B)는 상기 몸체(410)의 측면들 중 적어도 한 측면 또는 두 측면 이상에 연장될 수 있다. 24 and 25, the bottom surface area of the first metal part 411B disposed on the bottom of the body 410 is equal to or less than 1/2 of the bottom surface area of the body 410, / 5 &lt; / RTI &gt; range. The bottom surface area of the second metal part 413B may be 1/2 or less than 1/2 of the bottom surface area of the body 410, for example. The first metal part 411B is formed on a part or the whole of the bottom of the body between the first through hole TH41 and the first side S1 of the body 410 with reference to the first through hole TH41 . As another example, a part of the first metal part 411B may extend to the first side surface S1 of the body 410. [ A portion of the second metal portion 413B may extend to the second side S2 of the body 410. [ The first metal part 411B may be exposed to a lower portion of at least one or both of the first side S1, the third and the fourth sides S3 and S4 of the body 410. [ The second metal portion 413B may be exposed to the lower portion of at least one or both of the second side surface S1, the third and fourth side surfaces S3 and S4 of the body 410. [ The first metal part 411B and the second metal part 413B may be disposed on a vertical plane such as at least one side surface or two or more side surfaces of the body 410. The first and second metal portions 411B and 413B may extend to at least one side or two sides of the side surfaces of the body 410. [
상기 제1금속부(411B)의 내측부는 상기 제1관통홀(TH41)을 기준으로 제2관통홀(TH42) 방향 또는 제2측면(S2) 방향으로 연장될 수 있다. 상기 제2금속부(413B)의 내측부는 상기 제2관통홀(TH42)을 기준으로 제1관통홀(TH41) 방향 또는 제1측면(S1) 방향으로 연장될 수 있다. 상기 제1 및 제2금속부(411B,413B) 사이에는 몸체(410)의 하면이 노출되거나, 오목한 오목부(Sc)가 제공될 수 있다. 상기 오목부(Sc)는 상기 몸체(410)의 하면에서 상면 방향으로 오목하며, 곡면 또는 각진 면이거나, 러프한 표면을 가질 수 있다. 상기 오목부(Sc)는 상기 제1 및 제2금속부(411B,413B)가 제거된 영역이며, 전기적으로 제1 및 제2연결부(411,413)를 분리시켜 줄 수 있다. 상기 오목부(Sc)의 제2방향(Y) 길이는 상기 제1 및 제2금속부(411B,413B)의 길이와 동일하거나, 상기 몸체(410)의 하면의 제2방향 길이와 동일할 수 있다. 이러한 오목부(Sc)는 몸체의 하부에 연결부를 형성한 후 레이저 스크라이빙 공정을 통해 제거된 영역일 수 있다. 상기 오목부(Sc)의 깊이는 몸체 하면으로부터 1㎛ 이하 예컨대, 0.01 내지 1㎛ 범위이거나, 상기 몸체 하면부터 연결부(411,413)의 두께 이하일 수 있다. 상기 오목부(Sc)의 깊이가 상기 범위보다 큰 경우, 제1 및 제2관통홀(TH41,TH42) 사이의 강성이 저하될 수 있다. The inner side of the first metal part 411B may extend in the second through hole TH42 or the second side S2 with respect to the first through hole TH41. The inner side of the second metal part 413B may extend in the first through hole TH41 or the first side S1 with respect to the second through hole TH42. A lower surface of the body 410 may be exposed between the first and second metal portions 411B and 413B or a concave recess Sc may be provided. The concave portion Sc is recessed in the top surface direction from the bottom surface of the body 410, and may be a curved surface, an angled surface, or a rough surface. The concave portion Sc is a region where the first and second metal portions 411B and 413B are removed and can electrically disconnect the first and second connection portions 411 and 413. [ The length of the concave portion Sc in the second direction Y may be equal to the length of the first and second metal portions 411B and 413B or may be equal to the length of the lower surface of the body 410 in the second direction have. The concave portion Sc may be a region that is removed through a laser scribing process after a connection portion is formed at a lower portion of the body. The depth of the concave portion Sc may be in the range of 1 μm or less, for example, 0.01 to 1 μm from the bottom surface of the body, or may be less than the thickness of the connecting portions 411 and 413 from the bottom surface of the body. If the depth of the concave portion Sc is larger than the above range, the rigidity between the first and second through holes TH41 and TH42 may be reduced.
상기 제1 및 제2관통홀(TH41,TH42)에 배치된 상기 제1 및 제2연결부(411,413)의 표면적은 상기 제1 및 제2관통홀(TH41,TH42)의 표면적보다는 작을 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)에 배치된 상기 제1 및 제2연결부(411,413)의 각 면적은 상기 제1 및 제2금속부(411B,413B)의 각 면적이 면적보다 작을 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)에 배치된 상기 제1 및 제2연결부(411,413)의 높이는 상기 제1 및 제2관통홀(TH41,TH42)의 높이보다 크고, 상기 제1몸체(415)의 두께보다 클 수 있다. 이는 상기 제1 및 제2연결부(411,413)의 높이는 상기 제1 및 제2금속부의 두께를 포함하고 있어, 상기 제1 및 제2연결부(411,413)의 높이는 상기 제1 및 제2관통홀(TH41,TH42)의 하면보다 더 아래로 돌출될 수 있다. 다른 예로서, 상기 제1 및 제2연결부(411,413)의 상부는 상기 제1 및 제2관통홀(TH41,TH42)을 통해 상기 제1몸체(415)의 상면으로 연장될 수 있다. 이 경우, 상기 몸체(410)의 상면으로 연장된 연결부의 일부는 상기 발광소자(420)의 영역 아래에서 상기 발광소자(420)의 제1 및 제2본딩부(421,422)와 대면할 수 있다. The surface area of the first and second connection portions 411 and 413 disposed in the first and second through holes TH41 and TH42 may be smaller than the surface area of the first and second through holes TH41 and TH42. The respective areas of the first and second connection portions 411 and 413 disposed in the first and second through holes TH41 and TH42 are smaller than the areas of the first and second metal portions 411B and 413B . The height of the first and second connection portions 411 and 413 disposed in the first and second through holes TH41 and TH42 is greater than the height of the first and second through holes TH41 and TH42, (415). The heights of the first and second connection portions 411 and 413 include the thicknesses of the first and second metal portions, and the heights of the first and second connection portions 411 and 413 are equal to the height of the first and second through holes TH41 and TH41, RTI ID = 0.0 &gt; TH42. &Lt; / RTI &gt; As another example, the upper portions of the first and second connection portions 411 and 413 may extend to the upper surface of the first body 415 through the first and second through holes TH41 and TH42. In this case, a portion of the connection portion extending to the upper surface of the body 410 may face the first and second bonding portions 421 and 422 of the light emitting device 420 under the region of the light emitting device 420.
상기 제1 및 제2연결부(411,413)는 상기 제1 및 제2본딩부(421,422)와 연결될 수 있다. 상기 제1연결부(411)는 상기 제1본딩부(421)와 접촉되거나 연결될 수 있다. 상기 제2연결부(413)는 상기 제2본딩부(422)와 접촉되거나 연결될 수 있다. 상기 제1 및 제2연결부(411,413)와 상기 제1 및 제2본딩부(421,422) 사이의 계면은 금속 또는 금속간 화합물(IMC; intermetallic compound)층이 배치될 수 있으며, 상기에 개시된 설명을 참조하기로 한다. 도 31와 같이, 제1 및 제2관통홀(TH41,TH42) 내에는 도전부(321)를 포함할 수 있다. 상기 관통홀(TH41,TH42) 내부에 배치된 도전부는 하부에 절연 재질의 물질이 배치될 수 있고, 이 경우 상기 도전부가 하부로 누출되는 것을 차단할 수 있다. 상기 도전부는 상기 제1관통홀(TH41)에 배치된 상기 제1연결부(411)와 연결될 수 있고, 상기 제2관통홀(TH42)에 배치된 상기 제2연결부(413)와 연결될 수 있다. 이에 따라 상기 도전부에 의한 전기적인 및 열적인 경로를 최소화할 수 있다. The first and second connection portions 411 and 413 may be connected to the first and second bonding portions 421 and 422. The first connection part 411 may be in contact with or connected to the first bonding part 421. The second connection portion 413 may be in contact with or connected to the second bonding portion 422. The interface between the first and second connection portions 411 and 413 and the first and second bonding portions 421 and 422 may be a metal or an intermetallic compound layer (IMC) . As shown in Fig. 31, the first and second through holes TH41 and TH42 may include a conductive portion 321. The conductive parts disposed in the through holes TH41 and TH42 may be disposed at the lower part of the insulating material, and in this case, the conductive part may be prevented from leaking to the lower part. The conductive portion may be connected to the first connection portion 411 disposed in the first through hole TH41 and may be connected to the second connection portion 413 disposed in the second through hole TH42. Thereby minimizing electrical and thermal pathways by the conductive portions.
발명의 실시 예는 몸체 하부에서의 도전부의 유동 또는 확산을 방지할 수 있고 상기 각 관통홀(TH41,TH42) 내에 연결부(411,413)와 도전부의 접합성을 개선시켜 줄 수 있다. 상기 도전부의 확산을 억제할 수 있어, 상기 도전부가 일정한 분포나 형상을 갖게 되므로, 도전부의 불균일한 분포로 인한 전기적 오픈 문제나 열 전달 효율의 저하 문제를 방지할 수 있다. 상기 각 관통홀(TH41,TH42)의 일부 표면에 수지가 노출되고 다른 표면에 연결부(411,413)가 배치되므로, 도전부가 배치되는 관통홀(TH41,TH42) 내에 보이드(void)가 형성되는 것을 억제하거나 발생되는 보이드의 크기를 줄여줄 수 있다. The embodiment of the present invention can prevent the conductive part from flowing or diffusing in the lower part of the body and improve the bonding property between the connecting parts 411 and 413 and the conductive parts in the through holes TH41 and TH42. The diffusion of the conductive portion can be suppressed and the conductive portion has a uniform distribution and shape. Therefore, a problem of an electrical open due to uneven distribution of the conductive portion and a problem of deterioration of heat transfer efficiency can be prevented. Since the resin is exposed on a part of the surfaces of the through holes TH41 and TH42 and the connecting portions 411 and 413 are disposed on the other surfaces, voids are prevented from being formed in the through holes TH41 and TH42 in which the conductive portions are disposed The size of generated voids can be reduced.
리세스(R41,R42,R43) 각각은 몸체(410)의 상면 중에서 상기 발광소자(420)과 적어도 일부 또는 모두가 수직 방향으로 중첩될 수 있다. 도 23 및 도 25과 같이, 제1리세스(R41)는 상기 제1 및 제2관통홀(TH41,TH42) 사이의 영역에서 제3측면(S3) 방향으로 연장되며, 상기 제2리세스(R42)는 상기 제1 및 제2관통홀(TH41,TH42) 사이의 영역에서 제4측면(S4) 방향으로 연장될 수 있다. 상기 몸체(410)의 리세스는 제1 및 제2관통홀(TH41,TH42) 사이의 영역에 오목한 제3리세스(R43)를 포함할 수 있다. 상기 제3리세스(R43)는 제1 및 제2연결부(411,413) 사이의 영역에 오목하게 배치될 수 있다. 상기 리세스(R41,R42,R43)에는 제1수지(460)의 일부가 배치될 수 있다. 상기 리세스(R41,R42,R43)에 배치된 상기 제1수지(460)는 발광소자(420)의 하면과 접착되어, 상기 발광소자(420)가 틸트되거나 유동하는 것을 방지할 수 있다. 상기 제1수지(460)는 제1 및 제2본딩부(421,422)와 제1 및 제2연결부(411,413) 사이를 통해 상기 관통홀(TH41,TH42)내에 배치된 도전부에 접촉될 수 있다. 상기 리세스(R41,R42,R43)의 깊이는 상기 몸체(410)의 상면으로부터 소정 깊이로 형성될 수 있으며, 예컨대 20㎛ 이상 또는 20 내지 60㎛의 범위일 수 있다. 상기 리세스(R41,R42,R43)의 깊이가 상기 범위보다 크면 제1몸체(415)의 강성이 저하될 수 있고 상기 범위보다 작으면 지지력이 미미할 수 있다. 이러한 리세스(R41,R42,R43)의 깊이는 상기 제1몸체(415)의 두께보다 작을 수 있다. Each of the recesses R41, R42, and R43 may overlap at least part or all of the upper surface of the body 410 with the light emitting device 420 in the vertical direction. 23 and 25, the first recess R41 extends in the direction of the third side surface S3 in the region between the first and second through holes TH41 and TH42, and the second recess R41 extends in the second recess R42 may extend in the direction between the first and second through holes TH41 and TH42 in the direction of the fourth side surface S4. The recess of the body 410 may include a concave third recess R43 in an area between the first and second through holes TH41 and TH42. The third recess R43 may be concave in a region between the first and second connection portions 411 and 413. A portion of the first resin 460 may be disposed in the recesses R41, R42, and R43. The first resin 460 disposed in the recesses R41, R42 and R43 is bonded to the lower surface of the light emitting device 420 to prevent the light emitting device 420 from tilting or flowing. The first resin 460 may be in contact with the conductive parts disposed in the through holes TH41 and TH42 through the first and second bonding parts 421 and 422 and the first and second connection parts 411 and 413. The depth of the recesses R41, R42 and R43 may be a predetermined depth from the upper surface of the body 410, and may be, for example, 20 mu m or more or 20 to 60 mu m. If the depths of the recesses R41, R42 and R43 are larger than the above range, the rigidity of the first body 415 may be deteriorated. If the depth is smaller than the above range, the bearing force may be insignificant. The depths of the recesses R41, R42 and R43 may be smaller than the thickness of the first body 415. [
도 23와 같이, 상기 몸체(410)는 상기 발광소자(410)가 배치된 상면에 오목한 외곽 리세스(Ra)가 배치될 수 있다. 상기 외곽 리세스(Ra)는 설명의 편의를 위해, 제4리세스로 설명하기로 한다. 상기 제4리세스(Ra)는 상기 발광소자(420)의 코너들 중 적어도 한 코너에 배치될 수 있다. 다른 예로서, 상기 제4리세스(Ra)는 발광소자(420)의 코너들 중 하나, 2개 이상 또는 모두에 배치될 수 있다. 즉, 복수의 제4리세스(Ra)가 배치된 경우 서로 이격될 수 있다. 상기 제4리세스(Ra)의 내측부는 상기 발광소자(420)의 하면과 수직 방향으로 중첩되며, 외측부는 상기 발광소자(420)의 하면 외측으로 노출될 수 있다. 상기 제4리세스(Ra)의 내측부는 상기 발광소자(420)의 측면과의 이격 거리가 최소 0.1㎛ 이상으로 배치되어, 발광소자(420)의 하면과의 접착력이 저하되는 것을 방지할 수 있다. 상기 제4리세스(Ra)의 외측부는 내측부의 면적과 동일하거나 더 작을 수 있다. 상기 제4리세스(Ra)의 탑뷰 형상은 다각형 형상이거나, 타원 또는 원 형상을 포함할 수 있다. 상기 제4리세스(Ra)에는 제2수지(465)가 배치될 수 있다. 상기 제2수지(465)는 상기 발광소자(420)의 코너측 하면 또는/및 측면에 접착될 수 있다. 상기 제2수지(465)는 상기 발광소자(420)의 코너에 인접한 본딩부에 접촉되어, 발광소자(420)의 틸트나 유동을 방지할 수 있다. 상기 제2수지(465)는 상기 제1수지(460)과 접촉되거나 연결될 수 있다. 상기 제2수지(465)는 실리콘 또는 에폭시와 같은 수지 재질을 포함하거나, 내부에 금속 산화물 또는 필러를 포함할 수 있다. 상기 제4리세스(Ra)는 상기 제1관통홀(TH41)으로부터 적어도 80㎛ 이상 이격될 수 있으며, 예컨대 80 내지 420㎛의 범위로 이격될 수 있다. 상기 제4리세스(Ra)와 상기 제1관통홀(TH41) 사이의 거리가 상기 범위보다 가까운 경우, 상기 제4리세스(Ra)와 상기 제1관통홀(TH41) 사이의 영역에서의 강성이 저하될 수 있다. 상기 제4리세스(Ra)는 상기 발광소자(420)의 어느 한 코너에서 전극의 방향을 식별하거나 정렬하기 위한 식별 마크 또는 얼라인 마크로 기능할 수 있다. As shown in FIG. 23, the body 410 may have a recessed outer recess Ra on the upper surface on which the light emitting device 410 is disposed. The outline recess Ra will be described as a fourth recess for convenience of explanation. The fourth recess Ra may be disposed on at least one of the corners of the light emitting device 420. As another example, the fourth recess Ra may be disposed at one, two or more of the corners of the light emitting device 420. [ That is, when the plurality of fourth recesses Ra are arranged, they may be spaced apart from each other. The inner side of the fourth recess Ra may overlap the lower surface of the light emitting device 420 in the vertical direction and the outer side may be exposed to the outside of the lower surface of the light emitting device 420. The inner side of the fourth recess Ra may be disposed at a distance of at least 0.1 mu m from the side surface of the light emitting device 420 to prevent the adhesive force of the light emitting device 420 from being lowered . The outer side of the fourth recess Ra may be equal to or smaller than the area of the inner side. The top view shape of the fourth recess Ra may be polygonal, elliptical or circular. A second resin 465 may be disposed in the fourth recess Ra. The second resin 465 may be adhered to the bottom surface and / or the side surface of the light emitting device 420 at the corner. The second resin 465 may contact the bonding portion adjacent to the corner of the light emitting device 420 to prevent tilting or flow of the light emitting device 420. The second resin (465) may be in contact with or connected to the first resin (460). The second resin 465 may include a resin material such as silicon or epoxy, or may include a metal oxide or a filler therein. The fourth recess Ra may be spaced apart from the first through hole TH41 by 80 mu m or more, for example, 80 to 420 mu m. When the distance between the fourth recess Ra and the first through hole TH41 is smaller than the above range, the rigidity in the region between the fourth recess Ra and the first through hole TH41 Can be lowered. The fourth recess Ra may function as an identification mark or an alignment mark for identifying or aligning the direction of the electrode at any corner of the light emitting device 420.
여기서, 상기 몸체(410)과 상기 제1수지(460) 및 상기 제2수지(465)는 동일한 수지 재질로 형성될 수 있으며, 이 경우 상기 제1 및 제2수지(460,465)와 몸체(410) 사이의 접착력은 개선될 수 있다. 또한 상기 몸체(410)가 내부에 캐비티를 갖는 구조로 제공되므로, 몸체(410)의 측방향에서 캐비티 내부로 진행하는 습기를 차단할 수 있다. 여기서, 상기 몸체(410)의 캐비티(402)의 측면(432)과 상기 발광소자(420) 사이의 최소 간격은 50㎛ 이상 예컨대, 50 내지 200㎛의 범위로 배치될 수 있다. 이에 따라 몸체(410)의 내부 측면(432)와 발광소자(420) 사이의 거리를 줄여주어, 광 손실을 줄일 수 있다.Here, the body 410, the first resin 460 and the second resin 465 may be formed of the same resin material. In this case, the first and second resins 460, Can be improved. In addition, since the body 410 is provided in a structure having a cavity therein, it is possible to block the moisture flowing in the cavity from the lateral direction of the body 410. The minimum distance between the side surface 432 of the cavity 402 of the body 410 and the light emitting device 420 may be set in a range of 50 μm or more, for example, 50 to 200 μm. Accordingly, the distance between the inner side surface 432 of the body 410 and the light emitting device 420 can be reduced, thereby reducing optical loss.
도 25 및 도 26과 같이, 상기 제1관통홀(TH41)의 하면 중심은 상면 중심에 비해 제1측면(S1) 방향에 인접하게 배치되며, 상기 제2관통홀(TH42)의 하면 중심은 상면 중심에 비해 제2측면(S2) 방향에 인접하게 배치된다. 이에 따라 제1 및 제2관통홀(TH41,TH42) 내에서 서로 대향되는 두 내측면(Sa,Sb)의 경사 각도를 다르게 제공될 수 있으며, 예컨대, 몸체의 하면을 기준으로 외측의 제1내측면(Sa)의 경사 각도는 내측의 제2내측면(Sb)의 경사 각도보다 크게 제공할 수 있다. 상기 제1 및 제2내측면(Sa,Sb)의 경사 각도는 각 관통홀의 상단과 하단을 연결한 직선의 각도일 수 있다. 도 25와 같이 상기 제1 및 제2관통홀(TH41,TH42)에서 제2내측면(Sb)은 상부가 수직한 면이고 하부가 경사진 면인 경우, 관통홀(TH41,TH42)에서 경사진 면을 갖는 하부의 높이가 수직한 면을 갖는 상부의 높이보다 클 수 있다. 도 26과 같이 상기 제1 및 제2관통홀(TH41,TH42)에서 제1내측면(Sa)의 상단과 상기 제2내측면(Sb)의 상단은 곡면이거나, 각진 면일 수 있다. 상기 제1 및 제2관통홀(TH41,TH42)에서 제1내측면(Sa)의 상단과 상기 제2내측면(Sb)의 상단이 곡면인 경우, 연결부(411,413)과의 접합효율이 개선될 수 있고, 단부 파손을 방지할 수 있다. 이러한 상기 제1 및 제2관통홀(TH41,TH42)에서 제1내측면(Sa)이 제2내측면(Sb)보다 더 넓은 면적을 갖고 경사진 면으로 제공되므로, 액상으로 제공되는 도전부의 주입이 용이하고, 도전부와의 접촉 면적이 증가될 수 있으며, 내부 영역에서의 보이드의 발생을 억제할 수 있다. 발광소자 패키지는 발광소자(420)의 하부에 실시 예에 개시된 도전돌기를 포함할 수 있다. 상기 도전돌기는 제1 및 제2관통홀(TH41,TH42) 내에서 도전부와 연결될 수 있다. 25 and 26, the lower center of the first through-hole TH41 is disposed adjacent to the first side S1 in the direction of the center of the upper surface, and the lower center of the second through- Is disposed adjacent to the second side (S2) direction with respect to the center. Accordingly, the inclination angles of the two inner side surfaces Sa and Sb facing each other in the first and second through holes TH41 and TH42 may be different from each other. For example, The inclination angle of the side surface Sa can be larger than the inclination angle of the second inside side surface Sb. The inclination angle of the first and second inner sides Sa and Sb may be a straight line connecting the upper end and the lower end of each through hole. 25, the second inner side surface Sb of the first and second through holes TH41 and TH42 is inclined in the through holes TH41 and TH42 when the upper portion is vertical and the lower portion is inclined, May be greater than the height of the upper portion having the vertical surface. The upper end of the first inner side surface Sa and the upper end of the second inner side surface Sb in the first and second through holes TH41 and TH42 may be curved or angled. When the upper end of the first inner side surface Sa and the upper end of the second inner side surface Sb are curved in the first and second through holes TH41 and TH42, bonding efficiency with the connection portions 411 and 413 is improved And the end breakage can be prevented. Since the first inner side surface Sa of the first and second through holes TH41 and TH42 has a larger area than the second inner side surface Sb and is provided as an inclined surface, The contact area with the conductive part can be increased, and the occurrence of voids in the internal area can be suppressed. The light emitting device package may include the conductive protrusion disclosed in the embodiment below the light emitting device 420. The conductive protrusions may be connected to the conductive parts in the first and second through holes TH41 and TH42.
발광소자를 갖는 패키지의 형성 과정을 보면, 몸체에 복수의 관통홀를 제공하고, 몸체의 하면 및 상기 관통홀의 내측면에는 연결부 및 금속부로 구분되는 금속층이 형성될 수 있다. 상기 연결부 및 금속부로 구분되는 금속층는 증착 장비를 이용하여 증착될 수 있다. 상기 금속층이 서로 연결되어 형성된 경우, 레이져 스크라이빙 장비를 이용하여, 제1연결부(411) 및 제1금속부(411B)와, 제2연결부(413) 및 제2금속부(413B)로 분리시켜 줄 수 있다. 여기서, 상기 레이저가 조사된 부분에는 오목한 오목부(Sc)가 몸체 표면보다 낮게 배치될 수 있다. 이후, 제1수지를 이용하여 발광소자를 부착시켜 제1 및 제2관통홀 상에 위치시키고 몰딩부(490)로 몰딩하게 된다. 여기서, 상기 몰딩부가 형성된 후 또는 형성되기 전에, 패키지 단위(Unit 1)로 상기 몸체(410)의 측면을 커팅하고, 개별 패키지로 제공될 수 있다. 여기서, 복수의 발광소자를 갖는 패키지로 제공할 경우, 2개 또는 그 이상의 의 발광소자를 갖는 패키지 단위로 커팅할 수 있다. 예컨대, 제1방향 또는/및 제2방향으로 2개 이상의 발광소자를 갖는 패키지로 커팅할 수 있다. In the process of forming the package having the light emitting device, a plurality of through holes are provided in the body, and a metal layer, which is divided into a connection portion and a metal portion, may be formed on the bottom surface of the body and the inner surface of the through hole. The metal layer, which is divided into the connection part and the metal part, can be deposited using a deposition equipment. When the metal layers are formed to be connected to each other, the first connection part 411 and the first metal part 411B and the second connection part 413 and the second metal part 413B are separated using the laser scribing device . Here, concave depressions Sc may be arranged lower than the body surface in the laser-irradiated portion. Thereafter, the light emitting device is attached to the first and second through holes using the first resin, and is molded into the molding part 490. Here, the side of the body 410 may be cut with a package unit (unit 1) before or after the molding part is formed, and may be provided as individual packages. Here, in the case of providing a package having a plurality of light emitting elements, the package can be cut in units of packages each having two or more light emitting elements. For example, the package can be cut into a package having two or more light emitting elements in the first direction and / or the second direction.
<제5실시 예> <Fifth Embodiment>
도 27 내지 도 33은 은 발명의 제5실시 예에 따른 발광소자 패키지의 도면의 예이다. 상기 제5실시 예의 구성은 제4실시 예의 구성에 선택적으로 적용될 수 있으며, 도 18의 구조와 중복되는 부분의 설명을 생략하기로 한다. 27 to 33 show examples of the light emitting device package according to the fifth embodiment of the present invention. The configuration of the fifth embodiment can be selectively applied to the configuration of the fourth embodiment, and the description of the parts that overlap with those of the structure of FIG. 18 will be omitted.
도 27 내지 도 33을 참조하면, 발광소자 패키지(700)는 몸체(710), 복수의 금속부(720,730,740), 및 복수의 발광소자(751,753)를 포함할 수 있다. 상기 몸체(710)는 복수의 관통홀을 갖는 제1몸체(715), 상기 제1몸체(715) 상에 캐비티(702)를 갖는 제2몸체(710A)를 포함할 수 있다. 제1발광소자(751)의 하부에는 몸체(710)의 제1 및 제2관통홀(TH51,TH52)이 배치되며, 제2발광소자(753)의 하부에는 제3 및 제4관통홀(TH53,TH54)이 배치될 수 있다. 이러한 관통홀(TH51,TH52,TH53,TH54)은 제4실시 예의 설명을 참조하기로 한다. 27 to 33, the light emitting device package 700 may include a body 710, a plurality of metal parts 720, 730, and 740, and a plurality of light emitting devices 751 and 753. The body 710 may include a first body 715 having a plurality of through holes and a second body 710A having a cavity 702 on the first body 715. The first and second through holes TH51 and TH52 of the body 710 are disposed below the first light emitting device 751 and the third and fourth through holes TH53 and TH52 are provided below the second light emitting device 753. [ , TH54) may be disposed. The through holes TH51, TH52, TH53 and TH54 will be described with reference to the description of the fourth embodiment.
도 28 내지 도 30과 같이, 복수의 금속부는 몸체(710)의 하면에서 분리되어 배치되며, 제1내지 제3금속부(720,730,740)를 포함할 수 있다. 상기 제2금속부(730)는 제1 및 제3금속부(720,740) 사이에 배치되고, 인접한 제1 및 제2발광소자(751,753)를 직렬로 연결시켜 줄 수 있다. 이 경우, 상기 제2금속부(730)가 복수로 배치된 경우, 3개 이상의 발광소자를 직렬로 연결할 수 있다. 다른 예로서, 상기 제2금속부(730)가 없는 경우, 복수의 발광소자는 병렬로 연결될 수 있다. 상기 제2금속부(730)는 몸체(710)의 하면에서 제1발광소자(751) 아래에 배치된 제1연장부(732), 상기 제2발광소자(753) 아래에 배치된 제2연장부(734) 및 상기 제1 및 제2연장부(732,734)를 연결해 주는 중간 연결부(736)를 포함할 수 있다.As shown in FIGS. 28 to 30, the plurality of metal parts may be disposed separately from the lower surface of the body 710, and may include the first to third metal parts 720, 730, and 740. The second metal part 730 may be disposed between the first and third metal parts 720 and 740 and may connect the adjacent first and second light emitting devices 751 and 753 in series. In this case, when a plurality of the second metal parts 730 are disposed, three or more light emitting devices may be connected in series. As another example, in the absence of the second metal part 730, a plurality of light emitting devices may be connected in parallel. The second metal part 730 includes a first extension part 732 disposed under the first light emitting device 751 on the lower surface of the body 710, a second extension part 732 disposed below the second light emitting element 753, And an intermediate connection part 736 for connecting the first and second extension parts 732 and 734 to each other.
상기 제1금속부(720)는 제1관통홀(TH51)의 표면에 배치된 제1연결부(721)를 포함할 수 있다. 상기 제2금속부(730)는 제2 및 제3관통홀(TH52,TH53)의 표면에 배치된 제2 및 제3연결부(731,733)를 포함할 수 있다. 상기 제2 및 제3연결부(731,733)는 제1 및 제2연장부(732,734)를 통해 중간 연결부(736)에 연결될 수 있다. 상기 제3금속부(740)는 제4관통홀(TH54)의 표면에 배치된 제4연결부(741)를 포함할 수 있다. 상기 제2금속부(740)와 제4연결부(741)는 서로 연결될 수 있다. 제1발광소자(751)의 제1본딩부(51)는 제1관통홀(TH51) 상에서 상기 제1금속부(720)의 제1연결부(721)에 연결되며, 제2본딩부(52)는 제2관통홀(TH52) 상에서 상기 제2금속부(730)의 제2연결부(731)에 연결될 수 있다. 상기 제2발광소자(753)의 제1본딩부(51)는 제3관통홀(TH53) 상에서 제2금속부(723)의 제3연결부(723)에 연결되며, 제2본딩부(53)는 제4관통홀(TH54) 상에서 상기 제3금속부(740)의 제4연결부(741)에 연결될 수 있다. The first metal part 720 may include a first connection part 721 disposed on the surface of the first through hole TH51. The second metal part 730 may include second and third connection parts 731 and 733 disposed on the surfaces of the second and third through holes TH52 and TH53. The second and third connection portions 731 and 733 may be connected to the intermediate connection portion 736 through the first and second extension portions 732 and 734, respectively. The third metal part 740 may include a fourth connection part 741 disposed on the surface of the fourth through hole TH54. The second metal part 740 and the fourth connection part 741 may be connected to each other. The first bonding portion 51 of the first light emitting device 751 is connected to the first connection portion 721 of the first metal portion 720 on the first through hole TH51, May be connected to the second connection portion 731 of the second metal portion 730 on the second through hole TH52. The first bonding portion 51 of the second light emitting device 753 is connected to the third connection portion 723 of the second metal portion 723 on the third through hole TH53, May be connected to the fourth connection part 741 of the third metal part 740 on the fourth through hole TH54.
제1수지(712)는 발광소자(751,753), 제1몸체(715)의 상면, 복수의 리세스(R61,R62,R63,R64)에 배치될 수 있으며, 상기에 개시된 실시 예의 설명을 참조하기로 한다. 발광소자(751,753)의 외측 코너에는 제4실시 예와 같은 외곽 리세스 및 제2수지가 배치되어, 각 발광소자(751,753)의 틸트나 유동을 방지할 수 있다. 상기 캐비티(702) 또는 발광소자(751,753) 상에는 몰딩부(790)가 배치될 수 있다. 상기 제1 및 제2 및 제3금속부(720,730,740) 사이의 영역의 몸체 하면은 오목부(Sc)가 배치되어, 금속부들을 서로 분리시켜 줄 수 있다. The first resin 712 may be disposed on the upper surfaces of the light emitting devices 751 and 753 and the first body 715 and a plurality of recesses R61, R62, R63, and R64. Referring to the description of the embodiments disclosed hereinabove . The outer recesses and the second resin as in the fourth embodiment are disposed at the outer corners of the light emitting elements 751 and 753 to prevent the tilting and the flow of the light emitting elements 751 and 753. The molding part 790 may be disposed on the cavity 702 or the light emitting devices 751 and 753. [ The lower surface of the body of the area between the first, second and third metal parts 720, 730 and 740 may be provided with a concave part Sc so as to separate the metal parts from each other.
도 30 및 도 31와 같이, 각 발광소자(751,753)의 각 본딩부(51,52)에는 도전 돌기(51A,52A)가 배치되거나, 도 32과 같이, 각 발광소자(751,753)의 본딩부(51,52)에 도전 돌기가 없이 제공될 수 있다. 도 33과 같이, 각 관통홀에는 각 발광소자(751,753)의 각 본딩부(51,52)에는 도전 돌기(51A,52A)가 몸체 하면까지 연장되거나, 금속부의 하면까지 연장될 수 있다. 상기 관통홀에 배치된 도전부는 도전돌기(51A,52A)와 본딩부(51,52)와 연결부들을 서로 연결시켜 줄 수 있다. 이러한 구성은 도 37의 설명을 참조하기로 한다.The conductive protrusions 51A and 52A are disposed on the bonding portions 51 and 52 of the light emitting devices 751 and 753 or the bonding protrusions 51A and 52B of the light emitting devices 751 and 753 51, 52 without a conductive protrusion. The conductive protrusions 51A and 52A may extend to the bottom surface of the body or may extend to the bottom surface of the metal portion in the bonding portions 51 and 52 of the respective light emitting devices 751 and 753 in the respective through holes. The conductive parts disposed in the through holes may connect the conductive protrusions 51A and 52A, the bonding parts 51 and 52, and the connection parts. This configuration will be described with reference to FIG.
제4 및 제5실시 예의 구성은 선택적으로 서로 결합되거나 다른 제1 내지 제3실시 예에 선택적으로 적용될 수 있다. 또는 제1 내지 제3실시 예에 개시된 발광소자의 배치 형태나, 리세스의 구조 또는 형상과 같은 특징, 제1수지의 위치와 같은 구성은, 제4 및 제5실시 예에 선택적으로 적용될 수 있다. 제1 내지 제5실시 예에 따른 발광소자 패키지는 상기 각 관통홀은 도전부 없이 제공될 수 있다.The configurations of the fourth and fifth embodiments may be selectively combined with each other or selectively applied to the first to third embodiments. Or configurations of the light-emitting elements disclosed in the first to third embodiments, features such as the structure or the shape of the recess, and positions of the first resin may be selectively applied to the fourth and fifth embodiments . In the light emitting device package according to the first to fifth embodiments, each of the through holes may be provided without a conductive part.
실시 예에 따른 발광소자 패키지는 광원 장치에 적용될 수 있다. 상기 광원 장치는 산업 분야에 따라 표시 장치, 지시 장치, 조명 장치, 각종 차량 램프 등을 포함할 수 있다. 광원 장치는 각종 표시 장치 내에 배치되거나, 각종 라이트 유닛 내에 배치될 수 있다.The light emitting device package according to the embodiment can be applied to a light source device. The light source device may include a display device, a pointing device, a lighting device, various vehicle lamps, and the like depending on an industrial field. The light source device may be disposed in various display devices or may be disposed in various light units.

Claims (11)

  1. 제1관통홀을 갖는 제1프레임;A first frame having a first through hole;
    제2관통홀을 갖고 상기 제1프레임과 제1방향으로 이격된 제2프레임;A second frame having a second through-hole and spaced apart from the first frame in a first direction;
    상기 제1 및 제2프레임 사이에 배치된 몸체; 및A body disposed between the first and second frames; And
    상기 제1 및 제2프레임 상에 배치된 발광소자를 포함하고,And a light emitting element disposed on the first and second frames,
    상기 제1 및 제2관통홀은 하면의 면적이 상면의 면적보다 크며,Wherein the first and second through holes have an area smaller than that of the upper surface,
    상기 제1관통홀의 상면의 중심과 하면의 중심은 수직 방향으로 서로 어긋나며,The centers of the center and the lower surface of the upper surface of the first through hole are offset from each other in the vertical direction,
    상기 제2관통홀의 상면의 중심과 하면의 중심은 수직 방향으로 서로 어긋나는 발광소자 패키지.And the center of the upper surface of the second through-hole and the center of the lower surface are offset from each other in the vertical direction.
  2. 제1항에 있어서, 상기 제1관통홀의 하면의 폭은 제1방향으로 상기 제1관통홀의 상면의 폭보다 넓으며, 상기 제2관통홀의 하면의 폭은 제1방향으로 상기 제2관통홀의 상면의 폭보다 넓은 발광소자 패키지.The method as claimed in claim 1, wherein the width of the lower surface of the first through hole is larger than the width of the upper surface of the first through hole in the first direction, and the width of the lower surface of the second through hole is larger than the width of the upper surface of the second through hole Of the light emitting device package.
  3. 제2항에 있어서, 상기 제1관통홀의 하면의 폭은 제2방향으로 상기 제1관통홀의 상면의 폭보다 넓으며, 상기 제2관통홀의 하면의 폭은 제2방향으로 상기 제2관통홀의 상면의 폭보다 넓은 발광소자 패키지.3. The semiconductor device according to claim 2, wherein the width of the lower surface of the first through hole is larger than the width of the upper surface of the first through hole in the second direction, and the width of the lower surface of the second through hole is larger than the width of the upper surface of the second through hole Of the light emitting device package.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 발광소자는 제1방향의 길이가 제2방향의 길이보다 긴 광 소자 패키지.The optical device package according to any one of claims 1 to 3, wherein the light emitting element has a length in a first direction longer than a length in a second direction.
  5. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제 1 및 제2관통홀의 하면의 중심은 상기 제1 및 제2관통홀의 상면의 중심보다 상기 몸체로부터 더 이격되는 발광소자 패키지.The light emitting device package according to any one of claims 1 to 3, wherein the centers of the lower surfaces of the first and second through holes are further spaced from the body than the center of the upper surface of the first and second through holes.
  6. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제1관통홀의 하면의 중심은 상기 제1관통홀의 상면의 중심을 기준으로 상기 제2프레임으로부터 멀어지는 방향으로 이격되며, 상기 제2관통홀의 하면의 중심은 상기 제2관통홍의 상면의 중심을 기준으로 상기 제1프레임으로부터 멀어지는 방향으로 이격되는 발광소자 패키지.The connector according to any one of claims 1 to 3, wherein the center of the lower surface of the first through hole is spaced away from the second frame with respect to the center of the upper surface of the first through hole, And the center of the lower surface is spaced apart from the first frame with respect to the center of the upper surface of the second through hole.
  7. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 몸체의 상부에 적어도 하나의 리세스; 상기 리세스에 배치된 제1수지; 및 상기 발광소자의 하부 둘레에 제2수지를 포함하며,4. The apparatus of any one of claims 1 to 3, further comprising: at least one recess on an upper portion of the body; A first resin disposed in the recess; And a second resin around the lower portion of the light emitting element,
    상기 리세스는 상기 발광소자와 수직 방향으로 중첩되는 발광소자 패키지.Wherein the recess is overlapped with the light emitting element in a vertical direction.
  8. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제1 및 제2관통홀에 도전부가 배치된 발광소자 패키지.The light emitting device package according to any one of claims 1 to 3, wherein a conductive portion is disposed in the first and second through holes.
  9. 제8항에 있어서, 상기 발광소자는 상기 제1 및 제2관통홀에 배치된 도전돌기를 포함하며, 상기 도전돌기는 상기 도전부와 접촉되는 발광소자 패키지.The light emitting device package according to claim 8, wherein the light emitting device includes conductive protrusions disposed in the first and second through-holes, and the conductive protrusions are in contact with the conductive parts.
  10. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제1 및 제2관통홀에 제3수지 또는 도전부가 배치되며, 상기 발광소자는 상기 제1 및 제2관통홀에 배치된 도전돌기를 포함하며, 상기 도전돌기는 상기 제1 및 제2관통홀을 통해 상기 프레임의 하면에 노출되는 발광소자 패키지.The light emitting device according to any one of claims 1 to 3, wherein a third resin or a conductive portion is disposed in the first and second through holes, and the light emitting element has a conductive protrusion disposed in the first and second through holes Wherein the conductive protrusions are exposed to the lower surface of the frame through the first and second through holes.
  11. 복수의 프레임;A plurality of frames;
    상기 복수의 프레임 각각에 배치된 복수의 관통홀;A plurality of through holes arranged in each of the plurality of frames;
    상기 복수의 프레임 사이에 배치된 몸체; A body disposed between the plurality of frames;
    상기 복수의 프레임과 상기 몸체 상에 배치된 발광소자; 및A plurality of frames and a light emitting element disposed on the body; And
    상기 복수의 프레임의 상면, 상기 몸체의 상면 및 상기 관통홀에 배치된 수지를 포함하며,A resin disposed on an upper surface of the plurality of frames, an upper surface of the body, and a through hole,
    상기 발광소자는 하부에 상기 복수의 관통홀 각각으로 관통되는 복수의 도전돌기를 포함하며,Wherein the light emitting device includes a plurality of conductive protrusions penetrating through the plurality of through holes at a lower portion thereof,
    상기 복수의 도전돌기는 상기 복수의 프레임의 바닥에 노출되며,Wherein the plurality of conductive protrusions are exposed at the bottom of the plurality of frames,
    상기 복수의 도전돌기는 금속 재질의 기둥 형상을 가지며,Wherein the plurality of conductive protrusions have a columnar shape of a metal material,
    상기 복수의 도전돌기는 상기 프레임의 두께 이상의 높이를 가지며,Wherein the plurality of conductive protrusions have a height equal to or greater than the thickness of the frame,
    상기 복수의 관통홀 각각은 상면의 중심과 하면의 중심은 수직 방향으로 서로 어긋나게 배치되는 발광소자 패키지. Wherein each of the plurality of through holes is disposed so that the center of the upper surface and the center of the lower surface are shifted from each other in the vertical direction.
PCT/KR2018/015034 2017-12-05 2018-11-30 Light-emitting element package and light source device WO2019112250A1 (en)

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US20220310873A1 (en) * 2020-09-02 2022-09-29 Shenzhen China Star Optielectronics Semiconductor Display Technology Co., Ltd. Display device and manufacturing method thereof

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US20220310873A1 (en) * 2020-09-02 2022-09-29 Shenzhen China Star Optielectronics Semiconductor Display Technology Co., Ltd. Display device and manufacturing method thereof
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