CN104835824A - 半导体存储装置及其制造方法 - Google Patents
半导体存储装置及其制造方法 Download PDFInfo
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- CN104835824A CN104835824A CN201510064937.XA CN201510064937A CN104835824A CN 104835824 A CN104835824 A CN 104835824A CN 201510064937 A CN201510064937 A CN 201510064937A CN 104835824 A CN104835824 A CN 104835824A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 218
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000003860 storage Methods 0.000 claims abstract description 162
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000012535 impurity Substances 0.000 claims description 25
- 238000003475 lamination Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 69
- 229910052710 silicon Inorganic materials 0.000 description 69
- 239000010703 silicon Substances 0.000 description 69
- 239000011229 interlayer Substances 0.000 description 52
- 239000010410 layer Substances 0.000 description 43
- 230000009471 action Effects 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229920005591 polysilicon Polymers 0.000 description 22
- 230000000694 effects Effects 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000007769 metal material Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 229910052753 mercury Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000012217 deletion Methods 0.000 description 4
- 230000037430 deletion Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Debugging And Monitoring (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810262379.1A CN108565267B (zh) | 2014-02-06 | 2015-02-06 | 半导体存储装置及其制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014021747A JP2015149413A (ja) | 2014-02-06 | 2014-02-06 | 半導体記憶装置及びその製造方法 |
JP2014-021747 | 2014-02-06 |
Related Child Applications (1)
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CN201810262379.1A Division CN108565267B (zh) | 2014-02-06 | 2015-02-06 | 半导体存储装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN104835824A true CN104835824A (zh) | 2015-08-12 |
CN104835824B CN104835824B (zh) | 2018-05-01 |
Family
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Family Applications (2)
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CN201810262379.1A Active CN108565267B (zh) | 2014-02-06 | 2015-02-06 | 半导体存储装置及其制造方法 |
CN201510064937.XA Active CN104835824B (zh) | 2014-02-06 | 2015-02-06 | 半导体存储装置及其制造方法 |
Family Applications Before (1)
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CN201810262379.1A Active CN108565267B (zh) | 2014-02-06 | 2015-02-06 | 半导体存储装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (8) | US9520407B2 (zh) |
JP (1) | JP2015149413A (zh) |
CN (2) | CN108565267B (zh) |
TW (6) | TWI672798B (zh) |
Cited By (16)
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CN106558591A (zh) * | 2015-09-18 | 2017-04-05 | 三星电子株式会社 | 三维半导体器件 |
CN106611745A (zh) * | 2015-10-26 | 2017-05-03 | 株式会社东芝 | 半导体存储装置及其制造方法 |
CN106711147A (zh) * | 2015-11-17 | 2017-05-24 | 株式会社东芝 | 半导体存储装置及其制造方法 |
CN107170745A (zh) * | 2016-03-08 | 2017-09-15 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
CN107180835A (zh) * | 2016-03-10 | 2017-09-19 | 东芝存储器株式会社 | 半导体存储装置 |
CN107833888A (zh) * | 2016-09-13 | 2018-03-23 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
CN107924922A (zh) * | 2015-08-25 | 2018-04-17 | 英特尔公司 | 为存储器设备中的字线提供蚀刻停止 |
CN109860199A (zh) * | 2017-11-30 | 2019-06-07 | 旺宏电子股份有限公司 | 存储器元件及其操作方法 |
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CN110310956A (zh) * | 2018-03-20 | 2019-10-08 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN110854124A (zh) * | 2018-08-21 | 2020-02-28 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN110890377A (zh) * | 2018-09-10 | 2020-03-17 | 东芝存储器株式会社 | 半导体存储装置 |
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TWI715118B (zh) | 2021-01-01 |
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TWI805403B (zh) | 2023-06-11 |
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TWI582953B (zh) | 2017-05-11 |
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CN104835824B (zh) | 2018-05-01 |
US20220173124A1 (en) | 2022-06-02 |
CN108565267A (zh) | 2018-09-21 |
TWI640081B (zh) | 2018-11-01 |
TW202335260A (zh) | 2023-09-01 |
JP2015149413A (ja) | 2015-08-20 |
US20200335517A1 (en) | 2020-10-22 |
US10741583B2 (en) | 2020-08-11 |
US10497717B2 (en) | 2019-12-03 |
CN108565267B (zh) | 2022-11-04 |
US20230363167A1 (en) | 2023-11-09 |
TW201909386A (zh) | 2019-03-01 |
TWI672798B (zh) | 2019-09-21 |
US20210288073A1 (en) | 2021-09-16 |
US11063064B2 (en) | 2021-07-13 |
TW202236634A (zh) | 2022-09-16 |
US20150221667A1 (en) | 2015-08-06 |
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