CN103383527B - 包括用于沉浸光刻装置的真空清除的环境系统 - Google Patents
包括用于沉浸光刻装置的真空清除的环境系统 Download PDFInfo
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- CN103383527B CN103383527B CN201310235130.9A CN201310235130A CN103383527B CN 103383527 B CN103383527 B CN 103383527B CN 201310235130 A CN201310235130 A CN 201310235130A CN 103383527 B CN103383527 B CN 103383527B
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70816—Bearings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46211203P | 2003-04-10 | 2003-04-10 | |
| US60/462,112 | 2003-04-10 | ||
| US48447603P | 2003-07-01 | 2003-07-01 | |
| US60/484,476 | 2003-07-01 | ||
| CN200480009675.7A CN101061429B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200480009675.7A Division CN101061429B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103383527A CN103383527A (zh) | 2013-11-06 |
| CN103383527B true CN103383527B (zh) | 2015-10-28 |
Family
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Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
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| CN200480009675.7A Expired - Fee Related CN101061429B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201410838351.XA Expired - Fee Related CN104597717B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201310235130.9A Expired - Fee Related CN103383527B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201310339659.5A Expired - Fee Related CN103439864B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201610221854.1A Expired - Fee Related CN105700301B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201310236773.5A Expired - Fee Related CN103383528B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN2004800096738A Expired - Fee Related CN1774668B (zh) | 2003-04-10 | 2004-04-01 | 包括用于沉浸式光刻装置的传送区的环境系统 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200480009675.7A Expired - Fee Related CN101061429B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201410838351.XA Expired - Fee Related CN104597717B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310339659.5A Expired - Fee Related CN103439864B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201610221854.1A Expired - Fee Related CN105700301B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN201310236773.5A Expired - Fee Related CN103383528B (zh) | 2003-04-10 | 2004-03-29 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN2004800096738A Expired - Fee Related CN1774668B (zh) | 2003-04-10 | 2004-04-01 | 包括用于沉浸式光刻装置的传送区的环境系统 |
Country Status (7)
| Country | Link |
|---|---|
| US (13) | US7321415B2 (enExample) |
| EP (7) | EP2717098B1 (enExample) |
| JP (10) | JP4775256B2 (enExample) |
| KR (13) | KR101121655B1 (enExample) |
| CN (7) | CN101061429B (enExample) |
| SG (6) | SG141425A1 (enExample) |
| WO (1) | WO2004090634A2 (enExample) |
Families Citing this family (214)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| EP1571697A4 (en) | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
| KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| EP1598855B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus and method, and method of producing apparatus |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| WO2004090956A1 (ja) | 2003-04-07 | 2004-10-21 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
| KR101323993B1 (ko) | 2003-04-10 | 2013-10-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| CN101061429B (zh) | 2003-04-10 | 2015-02-04 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| CN1771463A (zh) | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
| EP2161621B1 (en) | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
| SG139733A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| KR101369582B1 (ko) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열 |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004102646A1 (ja) | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| TWI614794B (zh) | 2003-05-23 | 2018-02-11 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
| EP2453465A3 (en) | 2003-05-28 | 2018-01-03 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing a device |
| TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
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