CN103168347A - 用于臭氧硬化及硬化后的湿气处理的模块 - Google Patents

用于臭氧硬化及硬化后的湿气处理的模块 Download PDF

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CN103168347A
CN103168347A CN2011800492320A CN201180049232A CN103168347A CN 103168347 A CN103168347 A CN 103168347A CN 2011800492320 A CN2011800492320 A CN 2011800492320A CN 201180049232 A CN201180049232 A CN 201180049232A CN 103168347 A CN103168347 A CN 103168347A
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process chamber
module
base material
hardening cabinet
operate
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D·卢博米尔斯基
J·D·潘松二世
K·H·弗劳德
A·汗
S·文卡特拉马
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Applied Materials Inc
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Abstract

本发明揭示一种基材处理系统，所述基材处理系统具有多个沉积室及第一机械臂，所述第一机械臂可操作以在所述沉积室中的一个与装载闸基材固持区之间移动基材。系统亦可具有第二机械臂，所述第二机械臂可操作以在所述装载闸基材固持区与基材硬化及处理模块的硬化室之间移动基材。所述基材硬化及处理模块附接至所述装载闸基材固持区，且所述基材硬化及处理模块可包括:硬化室及处理室，所述硬化室用于在包含臭氧的氛围中硬化介电层，所述处理室用于在包含水蒸汽的氛围中处理所述经硬化的介电层。所述硬化室可相对于所述处理室垂直地配置。所述模块亦可包括加热系统，所述加热系统可操作地耦接至所述硬化室及所述处理室，其中所述加热系统可操作以将所述硬化室的第一温度调整至大约150°C至大约200°C，且将所述处理室的第二温度调整至大约80°C至大约100°C。模块可更进一步包括在硬化室及处理室两者上的进出门。所述进出门中的每一个可操作以移动至打开位置以接收基材，且当基材正在硬化或处理期间，所述进出门中的每一个可操作以移动至封闭密封的位置。

Description

用于臭氧硬化及硬化后的湿气处理的模块
相关中请的交叉引用
本甲请为2011年9月28日提交的标题为"Module for Ozone Cure andPost-Cure Moisture Treatment(用于臭氧硬化及硬化后的湿气处理的模块)"的美国专利申请No.13/247,687的PCT申请，并且与2010年10月5日提交的标题为"Module for Ozone Cure and Post-Cure Moisture Treatment(用于臭氧硬化及破化后的湿气处理的模块)"的美国临时申请第61/389,957号相关并要求其权益，上述申请的全部内容为了所有目的以引用的方式并入本文。
发明背景
自几十年前推出半导体器件以来，半导体器件的几何形状的大小已显著减小。现代半导体制造设备通常生产250nm、180nm及65nm特征结构大小的器件，并且正在开发且实施用于制造具有更小几何形状的器件的新设备。减少的特征结构大小在器件上产生具有减少的空间尺寸的结构特征。接着，降低的尺寸要求使用具有极低电阻率的导电材料及具有极低介电常数的绝缘材料。
低介电常数薄膜对于前金属电介质(PMD)层及金属间电介质(IMD)层尤为理想，以用于降低互连金属化的RC时间延迟、防止在不同水平金属化之间的串扰、且降低器件功率消耗。使用早期CVD技术沉积的未掺杂氧化硅的薄膜通常具有在4.0至4.2的范围内的介电常数(κ)。相反，现在常用于半导体工业中的各种碳基介电层具有低于3.0的介电常数。这些碳基层中的多数在最初沉积时皆相对不稳定，且随后在氧气环境中硬化和/或退火以增加薄膜的稳定性。
发明内容
本发明描述了基材硬化及处理模块，所述基材硬化及处理模块用于执行沉积于基材上的介电层的硬化及硬化后的处理。所述模块可包括独立硬化室及处理室。可将具有未硬化层的基材移送至模块的硬化室，所述未硬化层经由FCVD工艺沉积于基材上。沉积工艺可在基材上形成未硬化的含硅氧碳层、含硅氧氮层和/或含硅氧氮碳层。当基材被移送至硬化室时，所述或所述多个沉积层可在含臭氧氛围中于大约150°C至大约200°C的温度下硬化。在硬化之后，基材可被移送至模块的处理室且在高于露点的温度下(例如，大约80°C至大约100°C)曝露于含水蒸汽的氛围，以形成经处理的介电薄膜。对于一些制造工艺，当将经硬化且处理的基材从制造系统移除时，从模块移除的所述基材经由装载闸腔室及工厂接口(factofy interface;FI)被移送至储存所述基材的前端开启式晶圆传送盒(front-opening unifiedpod;FOUP)。
本发明的实施例包括基材硬化及处理模块。所述模块可包括硬化室及处理室，所述硬化室用于在包括臭氧的氛围中硬化介电层，且所述处理室用于在包括水蒸汽的氛围中处理所述经硬化的介电层。硬化室可相对于处理室垂直地定位。所述模块亦可包括加热系统，所述加热系统操作地耦接至硬化室及处理室。加热系统可经操作以将硬化室的第一温度调整至大约150°C至大约200°C，且将处理室的第二温度调整至大约80°C至大约100°C。所述模块可进一步包括在硬化室及处理室两者上的进出门。各进出门可操作以移动至打开位置以接收基材，且当基材正在硬化或处理期间，各进出门可操作以移动至封闭密封的位置。
本发明的实施例进一步包括基材处理系统，所述基材处理系统具有多个沉积室及第一机械臂，所述第一机械臂可操作以在沉积室中的一个与装载锁定基材固持区之间移动基材。系统亦可具有第二机械臂，所述第二机械臂可操作以在装载锁定基材固持区与基材硬化及处理模块的硬化室之间移动基材。基材破化及处理模块附接至装载锁定基材固持区，且基材硬化及处理模块可包括:硬化室及处理室，所述硬化室用于在包含臭氧的氛围中硬化介电层，所述处理室用于在包含水蒸汽的氛围中处理经硬化的介电层。硬化室可相对于处理室垂直地定位。所述模块亦可包括加热系统，所述加热系统可操作地耦接至硬化室及处理室，其中所述加热系统可操作以将硬化室的第一温度调整至大约150°C至大约200°C，且将处理室的第二温度调整至大约80°C至大约100°C。模块可更进一步包括在硬化室及处理室两者上的进出门。进出门中的每一个可操作以移动至打开位置以接收基材，且当基材正在硬化或处理期间，进出门中的每一个可操作以移动至封闭密封的位置。
附加实施例及特征结构在以下描述中部分地阐述，且部分地将在审查完所述说明书之后对本领域普通技术人员显而易见，或者可藉由实践本发明而学习。本发明的特征结构及优点可经由所述专利说明书中的工具、组合及方法来实现且获得。
附图简述
本发明的性质及优点的进一步理解可参考本专利说明书的剩余部分及附图来实现，其中贯穿若干附图使用相同附图标记以代表相同部件。在一些情况下，将子标号与附图标记相关联且随后用连字符表示多个类似部件中的一个部件。当在不指定现有子标签的情况下提及附图标记时，旨在代表所有所述多个类似部件。
图1图示根据本发明的实施例的基材硬化及处理模块的简化横截面图;
图2图示根据本发明的实施例包括一对基材硬化及处理模块的基材处理系统的简图;
图3图示根据本发明的实施例的基材处理系统的另一图，所述基材处理系统具有耦接至装载闸腔室的一对基材硬化及处理模块;
图4A图示根据本发明的实施例的基材处理系统的简化前侧立体图，所述基材处理系统具有位于装载闸腔室的相对侧上的一对基材破化及处理模块，所述装载闸腔室与一组基材处理室通过接口连接;及
图4B图示根据本发明的实施例的基材处理系统的简化后侧立体图，所述基材处理系统具有位于装载闸腔室的相对侧上的一对基材破化及处理模块，所述装载闸腔室与一组基材处理室通过接口连接。
图5图示具有相邻于工厂接口定位的基材硬化及处理模块的基材处理系统的简化俯视图。
具体实施方式
图1图示基材硬化及处理模块100，所述基材硬化及处理模块100包括相对于彼此垂直地定位的硬化室102及处理室104。在模块100中，图示硬化室垂直地定位于处理室102上方，然而附加实施例可将此次序颠倒且将处理室定位于硬化室上方。模块100亦图示所述两个腔室被共用侧壁110分离，所述共用侧壁110具有分别曝露于硬化室102及处理室104的内部的相对侧。附加实施例可具有分别界定硬化室102的底部及处理室104的顶部的两个分离侧壁。分离侧壁可为可逆地或永久地彼此附接，或者分离侧壁可相隔一间隙，所述间隙可能会或可能不会填充有绝缘材料。
两个腔室皆包括进出门106a-106b，进出门106a-106b可操作移动至打开位置以接收一个或多个基材108a-108c，且当基材正在硬化或处理时，进出门106a-106b亦可操作以移动至封闭密封的位置。模块100图示基材支架1l2a-ll2b，基材支架112a-112b可在腔室中同时固持多个基材108a-108c。如此使模块100成为可同时对多个基材(例如，两个或两个以上基材、三个或三个以上基材、四个或四个以上基材、五个或五个以上基材、十个或十个以上基材等等)执行硬化及处理步骤的批量硬化及处理模块。附加实施例可包括用于固持基材的替代结构，诸如可在垂直方向、水平方向和/或环形方向上移动的平台。所述这些替代结构可操作以固持单个基材或多个基材。
模块100可从机械臂114接收基材，所述机械臂114具有定位臂116，所述定位臂116可操作以将基材移动进出硬化室102及移送室104。定位臂116可将基材108a-108c置放至硬化室102的基材支架112a中，且稍后将经破化的基材自硬化室移除。定位臂116亦可将经硬化的基材从硬化室102移送至处理室104的基材支架112b。臂116亦可将经硬化且处理的基材从处理室104移除。在图示的实施例中，定位臂116可延伸至模块100的腔室中且从模块100的腔室回缩，以及在腔室之间以垂直方向移动。臂116亦可旋转以接收或置放来自靠近模块100的基材固持区的基材。
模块100亦可包括耦接至硬化及处理室的气体分配系统118及加热系统122以分别控制腔室的氛围条件及温度。如上所述，基材硬化可包括将基材在大约150°C至大约200°C的温度下曝露于含臭氧的氛围，且基材处理可包括将经硬化的基材在大约80°C至大约100°C的温度下曝露于含水蒸汽的氛围。
气体分配系统118可操作以控制气体从气源(未图示)至硬化室102及处理室104中的流动。在模块100中，输送机构包括气体导管120a-120b，气体导管120a-120b将气体从气体输送系统传送至腔室中的每一个。气体输送系统亦可包括气体回流管(未图示)，所述气体回流管将气体从模块100的腔室移除。气体回流管可耦接至真空泵及排气装置，所述真空泵及排气装置流体耦接至模块100。
由气体分配系统118输送至硬化室102的气体可包括氧分子、臭氧、氩气及氮分子等气体。所述这些气体可在单一气流中混合且发送至硬化室102，或单独地提供且在腔室中首先混合。由分配系统118输送至处理室104的气体可包括水蒸汽、氩气及氮分子等气体。
加热系统122可操作地耦接至在硬化室102及处理室104两者中的加热元件(未图示)。所述这些加热元件由加热系统122独立地控制，以允许硬化室102的温度不同于处理室104的温度。独立的温度感测器(未图示)可存在于腔室中以监控腔室温度，且向加热系统122提供反馈以用于调整和/或维持腔室中的温度。
现参看图2及图3，示出根据本发明的实施例的基材处理系统200，所述基材处理系统200包括一对基材硬化及处理模块202a-202b。系统200的商用实例可包括CenturaTM、ProducerTM及EternaTM系统的特定设置，所述这些系统由美国加尼福尼亚州圣克拉拉市的应用材料公司制造。
如图2中所示，模块202a-202b被定位在装载闸腔室204的相对端，且定位在系统200的工厂接口(FI)206之后。在图示的系统200的设置中，将模块202a-202b置放在FI206之后的定位不会增加系统的总宽度，且不会移动可逆耦接至系统的前侧的四个FOUP208a-208b中的两个FOUP。
模块202a-202b可逆地且大体上无泄漏地耦接至装载闸腔室204。耦合机构可包括可逆紧固件(例如，螺栓、螺钉等等)及垫片，所述这些垫片将模块202a-202b无泄漏地耦接至装载闸腔室。装载闸腔室204包括与模块202a-202b的硬化及处理室的进出门对准的开口，以允许机械臂在装载闸腔室与模块之间传送基材。
可经由FOUP2O8a-208d提供基材晶圆至系统，FOUP2O8a-208d可密封地耦接至FI206。基材可借助于配置在FI中的机械臂(未图示)通过FI206且进入至装载闸腔室204中。然后，另一机械臂可将基材从装载闸腔室204移送至处理室210a-210f中的一个，所述处理室210a-210f中的每一个在所述基材上沉积一或多个未硬化的介电层。
在沉积之后，机械臂可将基材从处理室210a-210f移送回至装载闸腔室204，其中初始机械臂可将基材经由腔室中的打开的进出门置放至模块202a-202b中的一个的硬化室中。如以上图1的描述中所表明，在机械臂已将未硬化的基材置放于硬化室中之后，当气体分配系统及加热系统将硬化室中的环境调整至硬化状态时，可将进出门置放于封闭密封的位置。一且基材上的所述或所述这些介电层已硬化，可打开进出门，且机械臂可取出经硬化的基材且将经硬化的基材移送至相同模块210a-2lOb的处理室。当气体分配系统及加热系统将腔室的环境调整至产生经硬化且处理的基材的处理状态时，可将处理室的进出门置放于封闭密封的位置。在处理工艺纬柬时，且当基材等候从系统200的移除时，可打开进出门，机械臂可将经硬化、处理的基材从模块210a-210b移除且将其返回至FOUP208a-208d。或者，经硬化、处理的基材可在最终移送至FOUP208a-208d中的一个之前移送回至处理室210a-210f中的一个或多个，用于另外的沉积、蚀刻、化学机械研磨(CMP)等等。
图4A及图4B分别图示根据本发明的实施例的基材处理系统400的简化前侧立体图及后侧立体图，其中一对基材硬化及处理模块402a-402b被定位于装载闸腔室404的相对侧上，所述装载闸腔室404与一组基材处理室406a-406f通过接口连接。所述这些附图将附接至装载闸腔室的相对侧上的模块402a-402b图示为大体上与附接至工厂接口(未图示)的装载闸腔室的前侧共面。如上所示，模块402a-402b的此设置允许所述这些模块402a-402b得以与整体基材处理系统400整合，而不增加系统400的宽度或干涉装载闸腔室406与FI的稠合。
图5图示具有相邻于FI504定位的基材硬化及处理模块502的基材处理系统500的简化俯视图。将硬化及处理模块502相邻于FI配置可允许减少基材从FI(未图示)的背侧之上的沉积室的运动，以及减少基材从硬化及处理模块502至位于FI的前侧之上的FOUP5O6a-506d的传送。硬化及处理模块可位于FI的一侧或两侧上。
在描述了若干实施例之后，本领域普通技术人员将认识到，可使用各种修改、替代构造及其均等物而不背离本发明的精神。另外，并未描述若干众所熟知的工艺及元件以免不必要地混淆本发明。因此，不应将上述描述作为本发明的范畴的限制。
在提供值的范围的情况下，应了解除非上下文明确规定，否则在所述范围的上限与下限之间的下限的单位的十分之一的各中间值亦被揭示。涵盖在声明范围中的任何声明值或中间值与在所述声明范围中的任何其他声明或中间值之间的各较小范围。所述这些较小范围的上下限可独立地包含于所述范围中或排除在所述范围外，并且根据在声明范围中的任何特定排除的限制，包含于较小范围的界限中的一者、无任何界限或两界限的各个范围亦可涵盖于本发明之内。在声明范围包括界限中的一者或两者的情况下，亦可包括排除那些所包括的界限的一者或两者的范围。
除非本文另有明确指定，否则如在本说明书及所附权利要求书中使用的单数形式"一"及"所述"包括复数指示对象。因此，例如，提及"工艺"包括多个所述工艺且提及"基材"包括提及一个或多个基材及本领域普通技术人员所熟知的其均等物，等等。
此外，当用语"包含"、"包括"用于本专利说明书及所附权利要求书中时，所述这些用语旨在指定上述结构特征、整数、器件或步骤的存在，但不排除一个或多个其他结构特征、整数、器件、步骤、动作或群组的存在或添加。

Claims (10)

1.一种基材硬化及处理模块，所述模块包含:
硬化室及处理室，所述硬化室用于在包含臭氧的氛围中硬化介电层，且所述处理室用于在包含水蒸汽的氛围中处理所述经硬化的介电层，其中所述硬化室相对于所述处理室垂直地配置;
加热系统，所述加热系统可操作地耦接至所述硬化室及所述处理室，其中所述加热系统可操作以将所述硬化室的第一温度调整至大约150°C至大约200°C，且所述加热系统可操作以将所述处理室的第二温度调整至大约80°C至大约100°C;以及
位于所述硬化室及所述处理室两者上的进出门，其中所述进出门中的每一个可操作以移动至打开位置以接收基材，且当所述基材正在硬化或处理时，所述进出门中的每一个可操作以移动至封闭密封的位置。
2.如权利要求1所述的模块，其特征在于，所述硬化室及所述处理室可同时接收多个基材。
3.如权利要求2所述的模块，其特征在于，所述多个基材在所述硬化室或所述处理室中相对于彼此垂直地定位。
4.如权利要求2所述的模块，其特征在于，所述模块为批量基材硬化及处理模块。
5.如权利要求1所述的模块，其特征在于，所述模块进一步包含气体分配系统，所述气体分配系统耦接至所述硬化室及所述处理室，其中所述气体分配系统可操作以将包含臭氧的硬化气体引入至所述硬化室，且所述气体分配系统可操作以将包含水蒸汽的处理气体引入至所述处理室。
6.如权利要求5所述的模块，其特征在于，所述模块进一步包含排气系统，所述排气系统经设置以将所述硬化气体从所述硬化室排出，且所述排气系统经设置以将所述处理气体从所述处理室排出。
7.一种基材处理系统，所述系统包含:
多个沉积室;
第一机械臂，所述第一机械臂可操作以在所述沉积室中的一个与装载闸基材固持区之间移动基材;
第二机械臂，所述第二机械臂可操作以在所述装载闸基材固持区与基材硬化及处理模块的硬化室之间移动所述基材，其中所述基材硬化及处理模块附接至所述装载闸基材固持区，且其中所述基材硬化及处理模块包含:
所述硬化室及处理室，所述硬化室用于在包含臭氧的氛围中硬化介电层，所述处理室用于在包含水蒸汽的氛围中处理所述经硬化的介电层，其中所述硬化室相对于所述处理室垂直地定位;
加热系统，所述加热系统可操作地耦接至所述硬化室及所述处理室，其中所述加热系统可操作以将所述硬化室的第一温度调整至大约150°C至大约200°C，且所述加热系统可操作以将所述处理室的第二温度调整至大约80°C至大约100°C;以及
位于所述硬化室及所述处理室两者上的进出门，其中所述进出门中的每一个可操作以移动至打开位置以接收基材，且当所述基材正在硬化或处理期间，所述进出门中的每一个可操作以移动至封闭密封的位置。
8.如权利要求7所述的系统，其特征在于，所述第二机械臂可操作以将所述基材从所述硬化室移除且将所述基材传送至所述处理室。
9.如权利要求7所述的系统，其特征在于，所述系统包含多个基材硬化及处理模块，其中各个模块附接至所述装载闸基材固持区。
10.如权利要求7所述的系统，其特征在于，所述硬化室及所述处理室可同时接收多个基材。
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