CN102157128B - 显示设备 - Google Patents
显示设备 Download PDFInfo
- Publication number
- CN102157128B CN102157128B CN201110096375.9A CN201110096375A CN102157128B CN 102157128 B CN102157128 B CN 102157128B CN 201110096375 A CN201110096375 A CN 201110096375A CN 102157128 B CN102157128 B CN 102157128B
- Authority
- CN
- China
- Prior art keywords
- transistor
- wiring
- transistorized
- electrically connected
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 311
- 238000000034 method Methods 0.000 claims description 142
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 30
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 230000009467 reduction Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 327
- 239000010410 layer Substances 0.000 description 301
- 239000000758 substrate Substances 0.000 description 259
- 239000004973 liquid crystal related substance Substances 0.000 description 252
- 230000006870 function Effects 0.000 description 134
- 239000000463 material Substances 0.000 description 125
- 239000003990 capacitor Substances 0.000 description 117
- 238000010586 diagram Methods 0.000 description 85
- 210000002858 crystal cell Anatomy 0.000 description 81
- 229910052710 silicon Inorganic materials 0.000 description 64
- 210000004379 membrane Anatomy 0.000 description 62
- 239000012528 membrane Substances 0.000 description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 56
- 238000004519 manufacturing process Methods 0.000 description 56
- 239000010703 silicon Substances 0.000 description 55
- 229910052581 Si3N4 Inorganic materials 0.000 description 39
- 239000012535 impurity Substances 0.000 description 39
- 230000005684 electric field Effects 0.000 description 37
- 230000008859 change Effects 0.000 description 36
- 230000004044 response Effects 0.000 description 32
- 230000005540 biological transmission Effects 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 229910052782 aluminium Inorganic materials 0.000 description 28
- 229910052814 silicon oxide Inorganic materials 0.000 description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 26
- 239000000956 alloy Substances 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 25
- 239000010936 titanium Substances 0.000 description 25
- 229910045601 alloy Inorganic materials 0.000 description 24
- 230000000694 effects Effects 0.000 description 24
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 24
- 229910052750 molybdenum Inorganic materials 0.000 description 23
- 229910052719 titanium Inorganic materials 0.000 description 23
- 238000005401 electroluminescence Methods 0.000 description 22
- 239000011521 glass Substances 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 21
- 238000012545 processing Methods 0.000 description 21
- 238000003475 lamination Methods 0.000 description 20
- 238000004891 communication Methods 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 238000007639 printing Methods 0.000 description 18
- 230000003068 static effect Effects 0.000 description 18
- 239000002585 base Substances 0.000 description 17
- 230000009286 beneficial effect Effects 0.000 description 17
- 229910052799 carbon Inorganic materials 0.000 description 17
- 239000011651 chromium Substances 0.000 description 17
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 229910052721 tungsten Inorganic materials 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000004411 aluminium Substances 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229910052804 chromium Inorganic materials 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 239000013078 crystal Substances 0.000 description 15
- 238000007667 floating Methods 0.000 description 15
- 229910052709 silver Inorganic materials 0.000 description 15
- 229910052715 tantalum Inorganic materials 0.000 description 15
- 229910052779 Neodymium Inorganic materials 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 14
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 13
- 230000000007 visual effect Effects 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 230000001133 acceleration Effects 0.000 description 12
- 210000002469 basement membrane Anatomy 0.000 description 12
- 230000008901 benefit Effects 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 230000005855 radiation Effects 0.000 description 12
- 238000013459 approach Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 230000002441 reversible effect Effects 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000007599 discharging Methods 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 239000010955 niobium Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 229910052758 niobium Inorganic materials 0.000 description 9
- 239000011701 zinc Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 230000002411 adverse Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 239000003086 colorant Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 239000010944 silver (metal) Substances 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 239000013081 microcrystal Substances 0.000 description 6
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 6
- 150000002894 organic compounds Chemical group 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 238000005282 brightening Methods 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 125000001153 fluoro group Chemical group F* 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 230000005236 sound signal Effects 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229920004933 Terylene® Polymers 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 230000003313 weakening effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 241000196324 Embryophyta Species 0.000 description 3
- 229910000583 Nd alloy Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229920006304 triacetate fiber Polymers 0.000 description 3
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 2
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 2
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 206010021033 Hypomenorrhoea Diseases 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 241001074085 Scophthalmus aquosus Species 0.000 description 2
- 241001515806 Stictis Species 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 2
- 229920006221 acetate fiber Polymers 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 235000009120 camo Nutrition 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 235000005607 chanvre indien Nutrition 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 210000002615 epidermis Anatomy 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011487 hemp Substances 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004776 molecular orbital Methods 0.000 description 2
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 210000003491 skin Anatomy 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 1
- MBXOOYPCIDHXGH-UHFFFAOYSA-N 3-butylpentane-2,4-dione Chemical compound CCCCC(C(C)=O)C(C)=O MBXOOYPCIDHXGH-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ADQUQHZAQKMUDV-UHFFFAOYSA-N barium boron Chemical compound [B].[Ba] ADQUQHZAQKMUDV-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- HGAZMNJKRQFZKS-UHFFFAOYSA-N chloroethene;ethenyl acetate Chemical compound ClC=C.CC(=O)OC=C HGAZMNJKRQFZKS-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- LBBIQSLGOXYURP-UHFFFAOYSA-N indium(3+) oxygen(2-) silicon(4+) tin(4+) Chemical compound [O-2].[In+3].[Sn+4].[Si+4] LBBIQSLGOXYURP-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- ABDMOMCGBHCTMN-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[O-2].[In+3] ABDMOMCGBHCTMN-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0202—Addressing of scan or signal lines
- G09G2310/0205—Simultaneous scanning of several lines in flat panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0248—Precharge or discharge of column electrodes before or after applying exact column voltages
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0289—Details of voltage level shifters arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0291—Details of output amplifiers or buffers arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/06—Details of flat display driving waveforms
- G09G2310/061—Details of flat display driving waveforms for resetting or blanking
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
- G09G2320/0646—Modulation of illumination source brightness and image signal correlated to each other
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0666—Adjustment of display parameters for control of colour parameters, e.g. colour temperature
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Thin Film Transistor (AREA)
- General Engineering & Computer Science (AREA)
- Shift Register Type Memory (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-270016 | 2006-09-29 | ||
| JP2006270016A JP4932415B2 (ja) | 2006-09-29 | 2006-09-29 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710162011XA Division CN101154343B (zh) | 2006-09-29 | 2007-09-29 | 显示设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157128A CN102157128A (zh) | 2011-08-17 |
| CN102157128B true CN102157128B (zh) | 2014-06-25 |
Family
ID=38736058
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110096375.9A Active CN102157128B (zh) | 2006-09-29 | 2007-09-29 | 显示设备 |
| CN200710162011XA Expired - Fee Related CN101154343B (zh) | 2006-09-29 | 2007-09-29 | 显示设备 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710162011XA Expired - Fee Related CN101154343B (zh) | 2006-09-29 | 2007-09-29 | 显示设备 |
Country Status (6)
| Country | Link |
|---|---|
| US (10) | US8054279B2 (https=) |
| EP (2) | EP3223283B1 (https=) |
| JP (1) | JP4932415B2 (https=) |
| KR (4) | KR101362952B1 (https=) |
| CN (2) | CN102157128B (https=) |
| TW (10) | TWI470602B (https=) |
Families Citing this family (181)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4785271B2 (ja) * | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
| TWI309831B (en) * | 2002-09-25 | 2009-05-11 | Semiconductor Energy Lab | Clocked inverter, nand, nor and shift register |
| US20070200803A1 (en) * | 2005-07-27 | 2007-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device, and driving method and electronic device thereof |
| US8330492B2 (en) | 2006-06-02 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| JP4932415B2 (ja) | 2006-09-29 | 2012-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5116277B2 (ja) * | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| TWI831616B (zh) | 2006-09-29 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US8314765B2 (en) | 2008-06-17 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device, and electronic device |
| KR101496150B1 (ko) * | 2008-08-19 | 2015-02-27 | 삼성전자주식회사 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
| JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101722913B1 (ko) | 2008-09-12 | 2017-04-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| CN102160103B (zh) * | 2008-09-19 | 2013-09-11 | 株式会社半导体能源研究所 | 显示装置 |
| US8284142B2 (en) * | 2008-09-30 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP2172977A1 (en) * | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP2172804B1 (en) * | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| KR101652693B1 (ko) | 2008-10-03 | 2016-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP5442234B2 (ja) | 2008-10-24 | 2014-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
| KR101259727B1 (ko) | 2008-10-24 | 2013-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| BRPI0920739A2 (pt) * | 2008-10-30 | 2015-12-29 | Sharp Kk | circuito de registro de deslocamento e dispositivo de exibição, e método para acionar circuito de registro |
| KR100958023B1 (ko) * | 2008-11-04 | 2010-05-17 | 삼성모바일디스플레이주식회사 | 유기전계 발광 표시장치 |
| TWI574423B (zh) * | 2008-11-07 | 2017-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| US8232947B2 (en) | 2008-11-14 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR101291384B1 (ko) | 2008-11-21 | 2013-07-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN101739929B (zh) * | 2008-11-24 | 2013-11-27 | 群创光电股份有限公司 | 面板的扫描驱动电路及其方法 |
| KR102334634B1 (ko) | 2008-11-28 | 2021-12-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 표시 장치를 포함하는 전자 장치 |
| TWI633371B (zh) | 2008-12-03 | 2018-08-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| TWI399605B (zh) * | 2008-12-16 | 2013-06-21 | Century Display Shenxhen Co | Active matrix liquid crystal display panel |
| TWI540647B (zh) | 2008-12-26 | 2016-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR101536218B1 (ko) * | 2008-12-26 | 2015-07-13 | 삼성디스플레이 주식회사 | 게이트 구동회로, 이를 갖는 표시 장치 및 이 게이트 구동회로의 제조 방법 |
| TWI402814B (zh) * | 2009-01-16 | 2013-07-21 | Chunghwa Picture Tubes Ltd | 可抑制臨界電壓漂移之閘極驅動電路 |
| TWI664619B (zh) | 2009-01-16 | 2019-07-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置及其電子裝置 |
| US9741309B2 (en) | 2009-01-22 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving display device including first to fourth switches |
| JP5484109B2 (ja) * | 2009-02-09 | 2014-05-07 | 三菱電機株式会社 | 電気光学装置 |
| US8330702B2 (en) * | 2009-02-12 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, display device, and electronic device |
| US8872751B2 (en) * | 2009-03-26 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having interconnected transistors and electronic device including the same |
| EP2234100B1 (en) * | 2009-03-26 | 2016-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| TWI617029B (zh) * | 2009-03-27 | 2018-03-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2010116558A1 (ja) * | 2009-03-30 | 2010-10-14 | シャープ株式会社 | 光センサ回路および表示装置ならびに光センサ回路の駆動方法 |
| TWI424241B (zh) * | 2009-04-07 | 2014-01-21 | Chunghwa Picture Tubes Ltd | 粒子顯示器之顯示三色之畫素驅動結構之顯色方法 |
| EP2422237A4 (en) * | 2009-04-21 | 2012-10-17 | Lg Electronics Inc | LIGHT EMITTING DEVICE |
| JP5751762B2 (ja) | 2009-05-21 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN111081550A (zh) * | 2009-06-30 | 2020-04-28 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法及半导体器件 |
| KR101476817B1 (ko) | 2009-07-03 | 2014-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 갖는 표시 장치 및 그 제작 방법 |
| BR112012000960A2 (pt) * | 2009-07-15 | 2016-03-15 | Sharp Kk | circuito acionador da linha do sinal de digitalização e dispositivo de exibição tendo o mesmo |
| WO2011010546A1 (en) | 2009-07-24 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI582951B (zh) * | 2009-08-07 | 2017-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置 |
| US8115883B2 (en) * | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| TWI671724B (zh) * | 2009-09-10 | 2019-09-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和顯示裝置 |
| KR101700470B1 (ko) * | 2009-09-16 | 2017-01-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 구동 회로를 포함하는 표시 장치 및 표시 장치를 포함하는 전자 기기 |
| CN102511082B (zh) * | 2009-09-16 | 2016-04-27 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US9715845B2 (en) * | 2009-09-16 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| CN102024410B (zh) * | 2009-09-16 | 2014-10-22 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| KR101740943B1 (ko) | 2009-09-24 | 2017-06-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2011043451A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device |
| KR101711236B1 (ko) * | 2009-10-09 | 2017-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011046025A1 (en) * | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
| KR102577885B1 (ko) * | 2009-10-16 | 2023-09-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011048945A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the same |
| KR20250075719A (ko) * | 2009-10-30 | 2025-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101712340B1 (ko) * | 2009-10-30 | 2017-03-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기 |
| CN106057819B (zh) * | 2009-10-30 | 2019-03-15 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2011058885A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
| KR102719739B1 (ko) * | 2009-12-04 | 2024-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011070929A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR101871654B1 (ko) | 2009-12-18 | 2018-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 및 표시 장치 |
| TWI423235B (zh) * | 2010-01-29 | 2014-01-11 | Innolux Corp | 液晶顯示裝置及其驅動方法 |
| KR101299256B1 (ko) * | 2010-01-29 | 2013-08-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| WO2011096153A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101774470B1 (ko) * | 2010-02-18 | 2017-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 장치 |
| KR101772246B1 (ko) * | 2010-02-23 | 2017-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 반도체 장치, 및 그 구동 방법 |
| KR101570853B1 (ko) | 2010-03-02 | 2015-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
| CN105245218B (zh) * | 2010-03-02 | 2019-01-22 | 株式会社半导体能源研究所 | 脉冲信号输出电路和移位寄存器 |
| KR102192753B1 (ko) | 2010-03-08 | 2020-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제작하는 방법 |
| WO2011114569A1 (ja) * | 2010-03-15 | 2011-09-22 | シャープ株式会社 | シフトレジスタ、走査信号線駆動回路、および表示装置 |
| US9891102B2 (en) * | 2010-04-22 | 2018-02-13 | Samsung Electronics Co., Ltd. | Simplified light sensing circuit, light sensing apparatus including the light sensing circuit, method of driving the light sensing apparatus, and image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus |
| WO2011145666A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register, and display device |
| TWI541782B (zh) | 2010-07-02 | 2016-07-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| US20120001179A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9029861B2 (en) | 2010-07-16 | 2015-05-12 | Sharp Kabushiki Kaisha | Thin film transistor and shift register |
| KR101760102B1 (ko) | 2010-07-19 | 2017-07-21 | 삼성디스플레이 주식회사 | 표시 장치, 표시 장치를 위한 주사 구동 장치 및 그 구동 방법 |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| US8854220B1 (en) * | 2010-08-30 | 2014-10-07 | Exelis, Inc. | Indicating desiccant in night vision goggles |
| JP5839896B2 (ja) | 2010-09-09 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN102467891B (zh) * | 2010-10-29 | 2013-10-09 | 京东方科技集团股份有限公司 | 移位寄存器单元、栅极驱动装置及液晶显示器 |
| KR101944465B1 (ko) * | 2011-01-06 | 2019-02-07 | 삼성디스플레이 주식회사 | 발광 제어선 구동부 및 이를 이용한 유기전계발광 표시장치 |
| KR101972463B1 (ko) | 2011-02-18 | 2019-08-19 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
| JP5933897B2 (ja) | 2011-03-18 | 2016-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8686486B2 (en) * | 2011-03-31 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| CN103492938B (zh) * | 2011-04-07 | 2016-06-08 | 夏普株式会社 | 液晶显示面板和具备该液晶显示面板的液晶显示装置 |
| WO2012147657A1 (ja) * | 2011-04-28 | 2012-11-01 | シャープ株式会社 | 半導体装置、アクティブマトリクス基板、及び表示装置 |
| TWI633556B (zh) * | 2011-05-13 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置 |
| US9466618B2 (en) | 2011-05-13 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including two thin film transistors and method of manufacturing the same |
| WO2012157186A1 (en) * | 2011-05-13 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101889383B1 (ko) * | 2011-05-16 | 2018-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 로직 디바이스 |
| TWI621243B (zh) | 2011-08-29 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US8736315B2 (en) * | 2011-09-30 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2013093565A (ja) | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| TWI451393B (zh) * | 2011-10-14 | 2014-09-01 | Sitronix Technology Corp | A driving method of a liquid crystal display device and a driving circuit thereof |
| TWI527007B (zh) * | 2011-11-25 | 2016-03-21 | 元太科技工業股份有限公司 | 驅動電路 |
| CN103959364B (zh) * | 2011-11-30 | 2017-01-18 | 株式会社半导体能源研究所 | 显示装置 |
| CN102646401B (zh) * | 2011-12-30 | 2013-10-16 | 北京京东方光电科技有限公司 | 移位寄存器、goa面板及栅极驱动方法 |
| JP5312621B2 (ja) * | 2012-01-30 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| JP6075922B2 (ja) * | 2012-02-29 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR101396942B1 (ko) | 2012-03-21 | 2014-05-19 | 엘지디스플레이 주식회사 | 게이트 구동부 및 이를 포함하는 액정표시장치 |
| TWI457909B (zh) | 2012-05-29 | 2014-10-21 | Sitronix Technology Corp | Scan the drive circuit |
| US9742378B2 (en) | 2012-06-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit and semiconductor device |
| TWI600022B (zh) * | 2012-07-20 | 2017-09-21 | 半導體能源研究所股份有限公司 | 脈衝輸出電路、顯示裝置、及電子裝置 |
| JP2014041344A (ja) * | 2012-07-27 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の駆動方法 |
| DE102013217278B4 (de) | 2012-09-12 | 2017-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung |
| CN102903323B (zh) * | 2012-10-10 | 2015-05-13 | 京东方科技集团股份有限公司 | 移位寄存器单元、栅极驱动电路及显示器件 |
| KR101983230B1 (ko) * | 2012-10-19 | 2019-05-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| KR102032962B1 (ko) | 2012-10-26 | 2019-10-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| CN102981339B (zh) * | 2012-12-10 | 2016-12-21 | 京东方科技集团股份有限公司 | 阵列基板、3d显示装置及其驱动方法 |
| KR101984955B1 (ko) * | 2013-01-16 | 2019-06-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치의 화소 회로 및 유기 발광 표시 장치 |
| US9792867B2 (en) * | 2013-02-19 | 2017-10-17 | Sakai Display Products Corporation | Display apparatus |
| KR102059561B1 (ko) * | 2013-04-08 | 2019-12-30 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 및 그의 구동방법 |
| JP6475424B2 (ja) | 2013-06-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI478132B (zh) * | 2013-06-14 | 2015-03-21 | Au Optronics Corp | 閘極驅動電路 |
| TWI483241B (zh) * | 2013-06-21 | 2015-05-01 | Himax Tech Ltd | 顯示器之共極電壓調整電路 |
| TWI622053B (zh) | 2013-07-10 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9583063B2 (en) | 2013-09-12 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TW202431651A (zh) * | 2013-10-10 | 2024-08-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP5752216B2 (ja) * | 2013-11-29 | 2015-07-22 | 株式会社ジャパンディスプレイ | 表示装置 |
| US9806098B2 (en) * | 2013-12-10 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| CN103728746B (zh) * | 2013-12-31 | 2016-10-05 | 深圳市华星光电技术有限公司 | 一种液晶显示面板的显示方法、驱动装置及液晶显示装置 |
| TWI654613B (zh) | 2014-02-21 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| JP5809722B2 (ja) * | 2014-03-03 | 2015-11-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| CN103905032B (zh) * | 2014-03-12 | 2016-09-14 | 宁波大学 | 一种碳纳米场效应晶体管编码器 |
| CN103943081A (zh) * | 2014-03-14 | 2014-07-23 | 京东方科技集团股份有限公司 | 移位寄存器、其制作方法、栅线集成驱动电路及相关装置 |
| US10199006B2 (en) | 2014-04-24 | 2019-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
| KR102230370B1 (ko) * | 2014-08-06 | 2021-03-23 | 엘지디스플레이 주식회사 | 표시장치 |
| JP6521794B2 (ja) | 2014-09-03 | 2019-05-29 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US9450581B2 (en) | 2014-09-30 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, semiconductor device, electronic component, and electronic device |
| KR102287194B1 (ko) | 2015-03-30 | 2021-08-09 | 삼성디스플레이 주식회사 | 게이트 구동회로 및 이를 포함하는 표시 장치 |
| CN104900676B (zh) * | 2015-04-29 | 2018-06-12 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| US9496299B1 (en) * | 2015-05-01 | 2016-11-15 | Sensors Unlimited, Inc. | Layout for routing common signals to integrating imaging pixels |
| CN104882105B (zh) * | 2015-05-28 | 2017-05-17 | 武汉华星光电技术有限公司 | 一种液晶驱动电路及液晶显示装置 |
| JP6830765B2 (ja) | 2015-06-08 | 2021-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017069021A1 (ja) * | 2015-10-19 | 2017-04-27 | シャープ株式会社 | シフトレジスタおよびそれを備える表示装置 |
| US10033361B2 (en) * | 2015-12-28 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Level-shift circuit, driver IC, and electronic device |
| KR102560314B1 (ko) * | 2015-12-29 | 2023-07-28 | 삼성디스플레이 주식회사 | 스캔 드라이버 및 이를 포함하는 표시 장치 |
| KR102481785B1 (ko) | 2015-12-30 | 2022-12-26 | 엘지디스플레이 주식회사 | 액정표시장치 |
| JP6665536B2 (ja) * | 2016-01-12 | 2020-03-13 | 株式会社リコー | 酸化物半導体 |
| KR20250044456A (ko) * | 2016-01-29 | 2025-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 가지는 표시 장치 |
| CN205621414U (zh) * | 2016-04-26 | 2016-10-05 | 京东方科技集团股份有限公司 | 静电放电电路、阵列基板和显示装置 |
| CN109314133B (zh) * | 2016-06-30 | 2022-04-29 | 英特尔公司 | 具有后道晶体管的集成电路管芯 |
| KR102664308B1 (ko) | 2016-08-31 | 2024-05-09 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 이의 구동방법 |
| WO2018043643A1 (ja) * | 2016-09-02 | 2018-03-08 | シャープ株式会社 | アクティブマトリクス基板およびアクティブマトリクス基板を備えた表示装置 |
| KR102586777B1 (ko) * | 2016-12-07 | 2023-10-12 | 삼성디스플레이 주식회사 | 데이터 구동부 및 그의 구동방법 |
| KR102709910B1 (ko) | 2016-12-07 | 2024-09-27 | 삼성디스플레이 주식회사 | 표시장치 및 그의 구동방법 |
| KR102740962B1 (ko) | 2017-01-10 | 2024-12-12 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 구동 방법 |
| US10796642B2 (en) * | 2017-01-11 | 2020-10-06 | Samsung Display Co., Ltd. | Display device |
| JP6827214B2 (ja) * | 2017-01-26 | 2021-02-10 | パナソニックIpマネジメント株式会社 | 照明システム、及び、昼行性家禽類の飼育方法 |
| US10866471B2 (en) * | 2017-02-23 | 2020-12-15 | Sharp Kabushiki Kaisha | Drive circuit, matrix substrate, and display device |
| JP6397964B2 (ja) * | 2017-06-14 | 2018-09-26 | 株式会社半導体エネルギー研究所 | シフトレジスタ及び半導体装置 |
| JP6419900B2 (ja) * | 2017-06-20 | 2018-11-07 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN107507568B (zh) | 2017-08-24 | 2019-08-13 | 深圳市华星光电半导体显示技术有限公司 | 一种oled像素电路及减缓oled器件老化的方法 |
| CN108198586B (zh) | 2018-01-18 | 2020-12-08 | 京东方科技集团股份有限公司 | 移位寄存器电路及其驱动方法、栅极驱动器和显示面板 |
| WO2019145813A1 (ja) * | 2018-01-24 | 2019-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US10964767B2 (en) | 2018-04-11 | 2021-03-30 | Sakai Display Products Corporation | Organic EL display device and manufacturing method for organic EL display device |
| KR102553107B1 (ko) * | 2018-07-25 | 2023-07-10 | 삼성전자주식회사 | 디스플레이 장치 및 그 영상 표시 방법 |
| US11139562B2 (en) * | 2018-09-14 | 2021-10-05 | Innolux Corporation | Antenna device |
| CN110911382B (zh) * | 2018-09-14 | 2021-06-25 | 群创光电股份有限公司 | 天线装置 |
| CN112655039B (zh) | 2018-09-21 | 2024-10-29 | 株式会社半导体能源研究所 | 触发器电路、驱动电路、显示面板、显示装置、输入输出装置、数据处理装置 |
| CN111223459B (zh) * | 2018-11-27 | 2022-03-08 | 元太科技工业股份有限公司 | 移位寄存器以及栅极驱动电路 |
| CN111312136B (zh) * | 2018-12-12 | 2022-01-14 | 京东方科技集团股份有限公司 | 移位寄存器单元、扫描驱动电路、驱动方法和显示装置 |
| CN111754948A (zh) * | 2019-03-29 | 2020-10-09 | 鸿富锦精密工业(深圳)有限公司 | 栅极扫描单元电路、栅极扫描电路及显示面板 |
| WO2020223061A1 (en) * | 2019-04-29 | 2020-11-05 | Efficient Power Conversion Corporation | GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE |
| TWI703543B (zh) * | 2019-06-24 | 2020-09-01 | 凌巨科技股份有限公司 | 閘極驅動裝置 |
| CN110473492B (zh) * | 2019-08-28 | 2021-01-26 | 上海灵信视觉技术股份有限公司 | 一种led全彩显示屏的动态非线性显示调整方法、系统和装置 |
| JP7415271B2 (ja) * | 2020-02-10 | 2024-01-17 | ソニーグループ株式会社 | 駆動装置、表示装置、および駆動装置の駆動方法 |
| TWI709137B (zh) * | 2020-02-20 | 2020-11-01 | 友達光電股份有限公司 | 移位暫存電路 |
| CN114072921B (zh) * | 2020-06-04 | 2025-08-22 | 京东方科技集团股份有限公司 | 显示基板、制作方法和显示装置 |
| US11500492B2 (en) | 2020-06-16 | 2022-11-15 | Novatek Microelectronics Corp. | Method of controlling display panel and related control circuit |
| CN111883083B (zh) * | 2020-07-30 | 2021-11-09 | 惠科股份有限公司 | 一种栅极驱动电路和显示装置 |
| JP7049433B2 (ja) * | 2020-12-01 | 2022-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN112967691B (zh) * | 2021-02-04 | 2022-10-18 | 业成科技(成都)有限公司 | 闸极驱动电路、闸极驱动装置与拼接式显示器 |
| KR102903634B1 (ko) | 2021-08-18 | 2025-12-29 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 구동 방법 |
| US12283326B2 (en) * | 2022-03-11 | 2025-04-22 | Ememory Technology Inc. | Memory cell and array structure of non-volatile memory and associated control method |
| US12223915B2 (en) * | 2023-03-23 | 2025-02-11 | Samsung Display Co., Ltd. | Pixel and gate driving circuit |
| KR20240152438A (ko) | 2023-04-12 | 2024-10-22 | 삼성디스플레이 주식회사 | 표시 장치 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5812284A (en) * | 1991-09-27 | 1998-09-22 | Canon Kabushiki Kaisha | Electronic circuit apparatus |
| US20050199960A1 (en) * | 2004-03-12 | 2005-09-15 | Hoffman Randy L. | Semiconductor device |
| CN1705042A (zh) * | 2004-05-31 | 2005-12-07 | Lg.菲利浦Lcd株式会社 | 移位寄存器 |
| CN1758321A (zh) * | 2004-10-05 | 2006-04-12 | 阿尔卑斯电气株式会社 | 液晶显示装置的驱动电路 |
Family Cites Families (117)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932415B1 (https=) | 1970-03-16 | 1974-08-30 | ||
| JPS5116277B2 (https=) | 1972-04-04 | 1976-05-22 | ||
| JPS5116277U (https=) | 1974-07-25 | 1976-02-05 | ||
| JPS5288654U (https=) | 1976-12-27 | 1977-07-02 | ||
| US4115508A (en) | 1977-05-31 | 1978-09-19 | Phillips Petroleum Company | Polymers and rotationally molding same |
| JPS5732779Y2 (https=) | 1977-09-27 | 1982-07-19 | ||
| JPS5726303Y2 (https=) | 1977-10-25 | 1982-06-08 | ||
| JPS5622902U (https=) | 1979-07-27 | 1981-02-28 | ||
| JPS58151719A (ja) | 1982-03-05 | 1983-09-09 | Sony Corp | パルス発生回路 |
| JPH04130816A (ja) | 1990-09-21 | 1992-05-01 | Hitachi Ltd | フリップフロップ回路 |
| US5410583A (en) | 1993-10-28 | 1995-04-25 | Rca Thomson Licensing Corporation | Shift register useful as a select line scanner for a liquid crystal display |
| JP2838765B2 (ja) | 1994-07-28 | 1998-12-16 | セイコークロック株式会社 | 負荷の駆動回路 |
| US5648790A (en) * | 1994-11-29 | 1997-07-15 | Prime View International Co. | Display scanning circuit |
| JP3309630B2 (ja) * | 1995-03-20 | 2002-07-29 | ソニー株式会社 | スイッチング回路およびこれを用いた電荷転送装置 |
| JP2708006B2 (ja) * | 1995-03-31 | 1998-02-04 | 日本電気株式会社 | 薄膜集積回路 |
| US5666288A (en) * | 1995-04-21 | 1997-09-09 | Motorola, Inc. | Method and apparatus for designing an integrated circuit |
| US5859630A (en) * | 1996-12-09 | 1999-01-12 | Thomson Multimedia S.A. | Bi-directional shift register |
| US6229506B1 (en) * | 1997-04-23 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
| US6278295B1 (en) * | 1998-02-10 | 2001-08-21 | Cypress Semiconductor Corp. | Buffer with stable trip point |
| KR100438525B1 (ko) * | 1999-02-09 | 2004-07-03 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 회로 |
| US6667506B1 (en) * | 1999-04-06 | 2003-12-23 | Peregrine Semiconductor Corporation | Variable capacitor with programmability |
| JP2000311494A (ja) | 1999-04-23 | 2000-11-07 | Minolta Co Ltd | シフトレジスタ回路及びそれを用いた固体撮像装置 |
| JP2001255519A (ja) | 2000-03-13 | 2001-09-21 | Toray Ind Inc | 液晶表示装置 |
| JP2001273785A (ja) | 2000-03-29 | 2001-10-05 | Casio Comput Co Ltd | シフトレジスタ及び電子装置 |
| JP4506026B2 (ja) | 2000-05-31 | 2010-07-21 | カシオ計算機株式会社 | シフトレジスタ、表示装置及び撮像素子 |
| US6611248B2 (en) | 2000-05-31 | 2003-08-26 | Casio Computer Co., Ltd. | Shift register and electronic apparatus |
| JP3873165B2 (ja) | 2000-06-06 | 2007-01-24 | カシオ計算機株式会社 | シフトレジスタ及び電子装置 |
| JP4152623B2 (ja) | 2001-01-29 | 2008-09-17 | 株式会社日立製作所 | 液晶表示装置 |
| TW575775B (en) | 2001-01-29 | 2004-02-11 | Hitachi Ltd | Liquid crystal display device |
| TW525139B (en) | 2001-02-13 | 2003-03-21 | Samsung Electronics Co Ltd | Shift register, liquid crystal display using the same and method for driving gate line and data line blocks thereof |
| KR100752602B1 (ko) | 2001-02-13 | 2007-08-29 | 삼성전자주식회사 | 쉬프트 레지스터와, 이를 이용한 액정 표시 장치 |
| JP4831716B2 (ja) | 2001-03-15 | 2011-12-07 | Nltテクノロジー株式会社 | アクティブマトリクス型液晶表示装置 |
| JP4761643B2 (ja) | 2001-04-13 | 2011-08-31 | 東芝モバイルディスプレイ株式会社 | シフトレジスタ、駆動回路、電極基板及び平面表示装置 |
| JP4785271B2 (ja) | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
| JP4439761B2 (ja) | 2001-05-11 | 2010-03-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
| TW582005B (en) * | 2001-05-29 | 2004-04-01 | Semiconductor Energy Lab | Pulse output circuit, shift register, and display device |
| KR100803163B1 (ko) | 2001-09-03 | 2008-02-14 | 삼성전자주식회사 | 액정표시장치 |
| JP3658349B2 (ja) | 2001-09-20 | 2005-06-08 | 松下電器産業株式会社 | 信号伝送回路、固体撮像装置、カメラおよび液晶表示装置 |
| US20030052848A1 (en) | 2001-09-20 | 2003-03-20 | Matsushita Electric Industrial Co., Ltd | Signal transmission circuit, solid-state imaging device, camera and liquid crystal display |
| US6753217B2 (en) * | 2001-11-29 | 2004-06-22 | Thin Film Electronics Asa | Method for making self-registering non-lithographic transistors with ultrashort channel lengths |
| US7050036B2 (en) | 2001-12-12 | 2006-05-23 | Lg.Philips Lcd Co., Ltd. | Shift register with a built in level shifter |
| JP3674592B2 (ja) | 2002-02-26 | 2005-07-20 | 松下電器産業株式会社 | 信号伝送回路の駆動方法 |
| KR100804038B1 (ko) | 2002-04-04 | 2008-02-18 | 삼성전자주식회사 | 쉬프트 레지스터 및 이를 갖는 액정표시장치 |
| JP4112283B2 (ja) * | 2002-05-29 | 2008-07-02 | 東芝松下ディスプレイテクノロジー株式会社 | 表示装置用電極基板 |
| WO2003107314A2 (en) | 2002-06-01 | 2003-12-24 | Samsung Electronics Co., Ltd. | Method of driving a shift register, a shift register, a liquid crystal display device having the shift register |
| AU2003241202A1 (en) * | 2002-06-10 | 2003-12-22 | Samsung Electronics Co., Ltd. | Shift register, liquid crystal display device having the shift register and method of driving scan lines using the same |
| KR100797522B1 (ko) | 2002-09-05 | 2008-01-24 | 삼성전자주식회사 | 쉬프트 레지스터와 이를 구비하는 액정 표시 장치 |
| JP4460822B2 (ja) | 2002-11-29 | 2010-05-12 | 東芝モバイルディスプレイ株式会社 | 双方向シフトレジスタ、これを用いた駆動回路、平面表示装置 |
| US7445721B2 (en) | 2003-12-03 | 2008-11-04 | Idaho Research Foundation, Inc. | Reactive filtration |
| JP4344698B2 (ja) | 2002-12-25 | 2009-10-14 | 株式会社半導体エネルギー研究所 | 補正回路を備えたデジタル回路及びそれを有する電子機器 |
| JP4425547B2 (ja) | 2003-01-17 | 2010-03-03 | 株式会社半導体エネルギー研究所 | パルス出力回路、シフトレジスタ、および電子機器 |
| KR100917009B1 (ko) | 2003-02-10 | 2009-09-10 | 삼성전자주식회사 | 트랜지스터의 구동 방법과 쉬프트 레지스터의 구동 방법및 이를 수행하기 위한 쉬프트 레지스터 |
| TW589612B (en) * | 2003-04-16 | 2004-06-01 | Au Optronics Corp | Display driving circuit |
| JP2004325716A (ja) * | 2003-04-24 | 2004-11-18 | Sharp Corp | カラー画像表示のための駆動回路およびこれを備えた表示装置 |
| US7369111B2 (en) | 2003-04-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Gate driving circuit and display apparatus having the same |
| KR100913303B1 (ko) | 2003-05-06 | 2009-08-26 | 삼성전자주식회사 | 액정표시장치 |
| US20070151144A1 (en) | 2003-05-06 | 2007-07-05 | Samsung Electronics Co., Ltd. | Detergent comprising the reaction product an amino alcohol, a high molecular weight hydroxy aromatic compound, and an aldehydye |
| KR20040097503A (ko) * | 2003-05-12 | 2004-11-18 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 |
| CN100484351C (zh) * | 2003-06-13 | 2009-04-29 | 松下电器产业株式会社 | 发光元件及其制造方法、显示装置 |
| WO2004112440A1 (ja) | 2003-06-13 | 2004-12-23 | Matsushita Electric Industrial Co., Ltd. | 発光素子及びその製造方法、表示装置 |
| US7486269B2 (en) * | 2003-07-09 | 2009-02-03 | Samsung Electronics Co., Ltd. | Shift register, scan driving circuit and display apparatus having the same |
| TWI229341B (en) * | 2003-08-13 | 2005-03-11 | Toppoly Optoelectronics Corp | Shift register circuit and a signal-triggered circuit for low temperature poly silicon (LTPS) liquid crystal display |
| JP4189585B2 (ja) * | 2003-09-17 | 2008-12-03 | カシオ計算機株式会社 | シフトレジスタ回路及び電子装置 |
| JP4321266B2 (ja) | 2003-10-16 | 2009-08-26 | ソニー株式会社 | インバータ回路および表示装置 |
| US7446748B2 (en) * | 2003-12-27 | 2008-11-04 | Lg Display Co., Ltd. | Driving circuit including shift register and flat panel display device using the same |
| KR101012972B1 (ko) * | 2003-12-30 | 2011-02-10 | 엘지디스플레이 주식회사 | 액티브 매트릭스 표시장치 |
| JP4645047B2 (ja) * | 2004-03-05 | 2011-03-09 | カシオ計算機株式会社 | シフトレジスタ回路及びその駆動制御方法並びに駆動制御装置 |
| US7009435B2 (en) * | 2004-03-09 | 2006-03-07 | Nano Silicon Pte Ltd. | Output buffer with controlled slew rate for driving a range of capacitive loads |
| JP2005285168A (ja) | 2004-03-29 | 2005-10-13 | Alps Electric Co Ltd | シフトレジスタ及びそれを用いた液晶駆動回路 |
| US7289594B2 (en) * | 2004-03-31 | 2007-10-30 | Lg.Philips Lcd Co., Ltd. | Shift registrer and driving method thereof |
| KR101023726B1 (ko) * | 2004-03-31 | 2011-03-25 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 |
| JP4223992B2 (ja) | 2004-05-25 | 2009-02-12 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
| KR20050117303A (ko) | 2004-06-10 | 2005-12-14 | 삼성전자주식회사 | 표시 장치 |
| KR101019416B1 (ko) * | 2004-06-29 | 2011-03-07 | 엘지디스플레이 주식회사 | 쉬프트레지스터 및 이를 포함하는 평판표시장치 |
| TWI393093B (zh) * | 2004-06-30 | 2013-04-11 | Samsung Display Co Ltd | 移位暫存器,具有該移位暫存器之顯示裝置,及其驅動方法 |
| CZ14844U1 (cs) * | 2004-07-02 | 2004-10-25 | Čechoplast, Spol. S R. O. | Izolační klec |
| KR101080352B1 (ko) | 2004-07-26 | 2011-11-04 | 삼성전자주식회사 | 표시 장치 |
| JP2006058770A (ja) | 2004-08-23 | 2006-03-02 | Toshiba Matsushita Display Technology Co Ltd | 表示装置の駆動回路 |
| US20060056267A1 (en) | 2004-09-13 | 2006-03-16 | Samsung Electronics Co., Ltd. | Driving unit and display apparatus having the same |
| KR101014172B1 (ko) | 2004-09-13 | 2011-02-14 | 삼성전자주식회사 | 구동유닛 및 이를 갖는 표시장치 |
| TWI284881B (en) * | 2004-09-14 | 2007-08-01 | Wintek Corp | High-reliability shift circuit using amorphous silicon thin-film transistor |
| KR101056369B1 (ko) * | 2004-09-18 | 2011-08-11 | 삼성전자주식회사 | 구동유닛 및 이를 갖는 표시장치 |
| KR101074402B1 (ko) * | 2004-09-23 | 2011-10-17 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 구동방법 |
| KR101056375B1 (ko) | 2004-10-01 | 2011-08-11 | 삼성전자주식회사 | 쉬프트 레지스터와, 이를 이용한 게이트 구동 회로 및표시 패널 |
| JP4362430B2 (ja) | 2004-10-14 | 2009-11-11 | Necエンジニアリング株式会社 | 分周回路 |
| JP2006164477A (ja) * | 2004-12-10 | 2006-06-22 | Casio Comput Co Ltd | シフトレジスタ、該シフトレジスタの駆動制御方法及び該シフトレジスタを備えた表示駆動装置 |
| KR101110133B1 (ko) | 2004-12-28 | 2012-02-20 | 엘지디스플레이 주식회사 | 액정표시장치 게이트 구동용 쉬프트레지스터 |
| KR101191157B1 (ko) | 2004-12-31 | 2012-10-15 | 엘지디스플레이 주식회사 | 액정표시장치의 구동부 |
| KR101066493B1 (ko) | 2004-12-31 | 2011-09-21 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 |
| KR101137880B1 (ko) | 2004-12-31 | 2012-04-20 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 및 그 구동 방법 |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| JP4993544B2 (ja) * | 2005-03-30 | 2012-08-08 | 三菱電機株式会社 | シフトレジスタ回路 |
| US8633919B2 (en) * | 2005-04-14 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method of the display device, and electronic device |
| JP2006309893A (ja) | 2005-04-28 | 2006-11-09 | Alps Electric Co Ltd | シフトレジスタ及び液晶駆動回路 |
| CN100592358C (zh) * | 2005-05-20 | 2010-02-24 | 株式会社半导体能源研究所 | 显示装置和电子设备 |
| KR101143004B1 (ko) | 2005-06-13 | 2012-05-11 | 삼성전자주식회사 | 시프트 레지스터 및 이를 포함하는 표시 장치 |
| KR100667075B1 (ko) | 2005-07-22 | 2007-01-10 | 삼성에스디아이 주식회사 | 주사 구동부 및 이를 포함하는 유기 전계발광 표시장치 |
| KR100646992B1 (ko) | 2005-09-13 | 2006-11-23 | 삼성에스디아이 주식회사 | 발광제어선 구동부 및 이를 이용한 유기 발광 표시장치 |
| JP2007226175A (ja) | 2006-01-26 | 2007-09-06 | Epson Imaging Devices Corp | 液晶装置及び電子機器 |
| JP2009110556A (ja) | 2006-02-14 | 2009-05-21 | Panasonic Corp | 光学ヘッドおよび光情報処理装置 |
| JP5128102B2 (ja) | 2006-02-23 | 2013-01-23 | 三菱電機株式会社 | シフトレジスタ回路およびそれを備える画像表示装置 |
| KR100776510B1 (ko) * | 2006-04-18 | 2007-11-16 | 삼성에스디아이 주식회사 | 주사구동회로 및 이를 이용한 유기발광표시장치 |
| US7936332B2 (en) * | 2006-06-21 | 2011-05-03 | Samsung Electronics Co., Ltd. | Gate driving circuit having reduced ripple effect and display apparatus having the same |
| EP1895545B1 (en) | 2006-08-31 | 2014-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP5079425B2 (ja) | 2006-08-31 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| TWI349906B (en) | 2006-09-01 | 2011-10-01 | Au Optronics Corp | Shift register, shift register array circuit, and display apparatus |
| JP5468196B2 (ja) | 2006-09-29 | 2014-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び液晶表示装置 |
| TWI831616B (zh) | 2006-09-29 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP5116277B2 (ja) | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| JP4932415B2 (ja) | 2006-09-29 | 2012-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4912186B2 (ja) | 2007-03-05 | 2012-04-11 | 三菱電機株式会社 | シフトレジスタ回路およびそれを備える画像表示装置 |
| JP4487318B2 (ja) | 2007-07-26 | 2010-06-23 | エプソンイメージングデバイス株式会社 | 液晶表示装置及びその製造方法 |
| JP2010250030A (ja) | 2009-04-15 | 2010-11-04 | Sharp Corp | シフトレジスタおよびそれを備えた表示装置、ならびにシフトレジスタの駆動方法 |
| JP5288654B2 (ja) | 2011-11-02 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| JP2012168536A (ja) | 2012-02-14 | 2012-09-06 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP5459919B2 (ja) | 2012-11-06 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、表示モジュール及び電子機器 |
| JP5622902B2 (ja) | 2013-07-31 | 2014-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、表示モジュール及び電子機器 |
-
2006
- 2006-09-29 JP JP2006270016A patent/JP4932415B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-11 EP EP17168951.6A patent/EP3223283B1/en active Active
- 2007-09-11 US US11/853,090 patent/US8054279B2/en active Active
- 2007-09-11 EP EP07017777.9A patent/EP1906414B1/en not_active Not-in-force
- 2007-09-17 KR KR1020070094009A patent/KR101362952B1/ko active Active
- 2007-09-20 TW TW100144564A patent/TWI470602B/zh active
- 2007-09-20 TW TW100144563A patent/TWI470601B/zh active
- 2007-09-20 TW TW109130978A patent/TWI766363B/zh active
- 2007-09-20 TW TW113103658A patent/TW202429466A/zh unknown
- 2007-09-20 TW TW105130617A patent/TWI585731B/zh active
- 2007-09-20 TW TW111118981A patent/TWI835143B/zh active
- 2007-09-20 TW TW103132393A patent/TWI562112B/zh active
- 2007-09-20 TW TW107144724A patent/TWI705425B/zh active
- 2007-09-20 TW TW106107790A patent/TWI661410B/zh active
- 2007-09-20 TW TW096135199A patent/TWI444952B/zh active
- 2007-09-29 CN CN201110096375.9A patent/CN102157128B/zh active Active
- 2007-09-29 CN CN200710162011XA patent/CN101154343B/zh not_active Expired - Fee Related
-
2011
- 2011-11-04 US US13/289,100 patent/US8743044B2/en active Active
- 2011-11-04 US US13/289,084 patent/US8902145B2/en active Active
- 2011-12-05 KR KR1020110128785A patent/KR101437013B1/ko active Active
- 2011-12-05 KR KR1020110128786A patent/KR101364071B1/ko active Active
-
2014
- 2014-01-10 KR KR1020140003375A patent/KR101499183B1/ko active Active
- 2014-11-20 US US14/548,365 patent/US9536903B2/en active Active
-
2016
- 2016-12-28 US US15/391,938 patent/US9842861B2/en active Active
-
2017
- 2017-11-29 US US15/825,147 patent/US10297618B2/en active Active
-
2019
- 2019-05-16 US US16/413,917 patent/US10930683B2/en active Active
-
2021
- 2021-02-17 US US17/177,422 patent/US20210320128A1/en not_active Abandoned
-
2022
- 2022-01-14 US US17/576,024 patent/US11967598B2/en active Active
-
2023
- 2023-10-10 US US18/378,206 patent/US12107092B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5812284A (en) * | 1991-09-27 | 1998-09-22 | Canon Kabushiki Kaisha | Electronic circuit apparatus |
| US20050199960A1 (en) * | 2004-03-12 | 2005-09-15 | Hoffman Randy L. | Semiconductor device |
| CN1705042A (zh) * | 2004-05-31 | 2005-12-07 | Lg.菲利浦Lcd株式会社 | 移位寄存器 |
| CN1758321A (zh) * | 2004-10-05 | 2006-04-12 | 阿尔卑斯电气株式会社 | 液晶显示装置的驱动电路 |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102157128B (zh) | 显示设备 | |
| US20250076720A1 (en) | Display device and electronic device | |
| US12148761B2 (en) | Display device | |
| JP2021144242A (ja) | 液晶表示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |